Relevant bibliographies by topics / DC sputtering

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'DC sputtering'

Author: Grafiati
Published: 5 June 2025
Last updated: 15 July 2025

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Journal articles on the topic "DC sputtering"

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Zhao, Haili, Jingpei Xie, and Aixia Mao. "Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering." Applied Sciences 9, no. 7 (2019): 1395. http://dx.doi.org/10.3390/app9071395.

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Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relatively random, in this paper, the effects of the bottom layer RF sputtering pressures on the microstructures and properties of Mo bilayer films were first studied in detail. Next, in order to further improve their properties, the as-prepared Mo bilayer films at 0.4 Pa bottom layer RF sputtering pressure were annealed at different temperatures and then investigated. Specifically, Mo bilayer films were deposited on soda-lime glass substrates by RF/DC magnetron sputtering at different bottom layer RF sputtering pressures in the range of 0.4–1.2 Pa, the powers of bottom layer RF sputtering and top layer DC sputtering were 120 W and 100 W, respectively. Then, Mo bilayer films, prepared at a bottom layer sputtering pressure of 0.4 Pa and top layer sputtering pressure of 0.3 Pa, were annealed for 30 min at various temperatures in the range of 100–400 °C. The effects of bottom layer sputtering pressures and the annealing temperatures on the microstructures, electrical and optical properties of Mo bilayer films were clarified by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM), and ultraviolet (UV)-visible spectra, respectively. It is shown that with decreasing bottom layer sputtering pressure from 1.2 to 0.4 Pa and increasing annealing temperature from 100 to 400 °C, the crystallinity, electrical and optical properties of Mo bilayer films were improved correspondingly. The optimized Mo bilayer film was prepared at the top layer sputtering pressure of 0.3 Pa, the bottom layer sputtering pressure of 0.4 Pa and the annealing temperature of 400 °C. The extremely low resistivity of 0.92 × 10−5 Ω.cm was obtained. The photo-conversion efficiency of copper indium gallium selenium (CIGS) solar cell with the optimized Mo bilayer film as electrode was up to as high as 13.5%.
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Park, Min Woo, Wang Woo Lee, Jae Gab Lee, and Chong Mu Lee. "A Comparison of the Mechanical Properties of RF- and DC- Sputter-Deposited Cr Thin Films." Materials Science Forum 546-549 (May 2007): 1695–98. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1695.

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Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power. The deposition rate and hardness of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one.
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Huguenin-Love, James, Noel T. Lauer, Rodney J. Soukup, Ned J. Ianno, Štepan Kment, and Zdenek Hubička. "The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode." Materials Science Forum 645-648 (April 2010): 131–34. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.131.

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Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.
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Jin, Chun Long, Ha Na Shim, Eou Sik Cho, and Sang Jik Kwon. "Effect of Pulsed-DC Power on the Zinc Oxide Window Layer of CIGS Solar Cells Deposited by In-Line Sputtering Methods." Advanced Materials Research 805-806 (September 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.131.

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Zinc oxide (ZnO) thin film was deposited on the glass substrate and cadmium-sulfide (CdS) thin film at room temperature by using an in-line pulsed-DC magnetron sputtering system. The sputtering process was carried out at various pulsed-DC power and radio frequency (RF) power from 400 W to 1 kW. From the thickness of the sputtered ZnO films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, for both pulsed-DC sputtered and RF sputtered ZnO films, the similar results were obtained in case of the energy band gaps and the structural characteristics such as adhesion to CdS. From the results, the ZnO films sputtered by pulsed-DC power are expected to be used in the fabrication process instead of RF power.
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Prasad, C. L. V. R. S. V., G. V. S. S. Sharma, and P. N. L. Pavani. "Capability Resurrection of DC Sputtering Machine." International Journal of Surface Engineering and Interdisciplinary Materials Science 9, no. 1 (2021): 60–76. http://dx.doi.org/10.4018/ijseims.2021010104.

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Nanocoatings are gaining popularity owing to their widespread applications and the physical vapour deposition constitutes an effective method of deposition of coatings onto a suitable substrate. This work comprises of capability resurrection of a newly installed DC sputtering machine through troubleshooting, calibration, and establishment of process parameter mainly in terms of critical-to-performance (CTP) characteristic identified as the sputtering voltage. This work exercises the identification of potential causes for the breakdown of the sputtering machine through Ishikawa diagram and root cause is identified through the why-why analysis. Prioritization of corrective actions through process failure modes and effects analysis (PFMEA). Correct functioning of the DC sputtering machine after taking corrective action, is validated and confirmed through experimentation. This work shall serve as a reference to the maintenance and process personnel and guide them to perform the experiments related to DC sputtering in a laboratory environment.
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Zheng, Hua Jing, Chi Zhang, and Zheng Ruan. "Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method." Applied Mechanics and Materials 575 (June 2014): 254–63. http://dx.doi.org/10.4028/www.scientific.net/amm.575.254.

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With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.
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Zhang, Jin Min, Quan Xie, Vesna Borjanović, et al. "Preparation of the Kondo Insulators FeSi by Magnetron Sputtering." Materials Science Forum 663-665 (November 2010): 1129–32. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1129.

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The Kondo insulator FeSi was prepared by DC magnetron sputtering and the effects of sputtering parameters on the formation of FeSi were investigated in detail. The formation of monosilicide FeSi was clarified using X-ray diffraction (XRD) and its microstructure was characterized by scanning electron microscopy (SEM). The results indicate that the sputtering gas pressure, the sputtering power and the Ar flux all have significantly effects on formation of FeSi and the crystalline of the film. The sputtering gas pressure has effects on sputtering yields, depositing rate and the energy of sputtering atoms, the sputtering power has effects on the kinetic energy and the diffusion ability of deposing atoms and the gas flux has the effects on the flowing state of Ar gas. The most optimal sputtering parameters for the preparation of the Kondo insulator FeSi by DC magnetron sputtering are given: 1.5 Pa for sputtering Ar pressure, 100 W for sputtering power and 20 SCCM for sputtering Ar flux.
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Jadoon, Nabeel Ahmad Khan, Vaigunthan Puvanenthiram, Mayada Ahmed Hassan Mosa, Ashutosh Sharma, and Kaiying Wang. "Recent Advances in Aluminum Nitride (AlN) Growth by Magnetron Sputtering Techniques and Its Applications." Inorganics 12, no. 10 (2024): 264. http://dx.doi.org/10.3390/inorganics12100264.

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This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth and navigating the complexities of thin-film fabrication. Emphasis is placed on different sputtering methods such as DC, RF, pulsed DC, and high-power impulse DC, highlighting how tailored sputtering conditions enhance film characteristics in each method. Additionally, the review discusses recent research findings showcasing the dynamic potential of these techniques. The practical applications of AlN thin films, including wave resonators, energy harvesting devices, and thermal management solutions, are outlined, demonstrating their relevance in addressing real-world engineering challenges.
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Watazu, Akira, Katsuhiko Kimoto, Sonoda Tsutomu, et al. "Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets." Materials Science Forum 544-545 (May 2007): 495–98. http://dx.doi.org/10.4028/www.scientific.net/msf.544-545.495.

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Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.
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Mishra, Brajendra, J. J. Moore, Jian Liang Lin, and W. D. Sproul. "Advances in Thin Film Technology through the Application of Modulated Pulse Power Sputtering." Materials Science Forum 638-642 (January 2010): 208–13. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.208.

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High power pulsed magnetron sputtering (HPPMS) is an emerging thin film deposition technology that generate high ionization plasma by applying a very large amount of peak power to a sputtering target for a short period of time. HPPMS is also known as High Power Impulse Magnetron Sputtering (HiPIMS). However, HPPMS/HiPIMS exhibits decreased deposition rate as compared to continuous dc magnetron sputtering. Modulated pulse power (MPP) magnetron sputtering is an alternative HPPIMS deposition technique that overcomes the rate loss problem while still achieving a high degree of ionization of the sputtered material. In the present work, the principles and some important characteristics of MPP technology were presented. Technical examples of CrN coatings were deposited using MPP and continuous dc sources. The positive ion mass distributions were characterized using an electrostatic quadrupole plasma mass spectrometer. The structure and properties of MPP and dc CrN coatings were characterized using x-ray diffraction, scanning electron microscopy, nanoindentation tests, and ball-on-disc wear test. It was found that the MPP CrN coating exhibits denser microstructure and improved mechanical and tribological properties as compared to the dc CrN coating.
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Dissertations / Theses on the topic "DC sputtering"

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Zhao, Shuxi. "Spectrally Selective Solar Absorbing Coatings Prepared by dc Magnetron Sputtering." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7530.

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Dane, Andrew E. (Andrew Edward). "Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/97257.

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Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references.<br>DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition.<br>by Andrew E. Dane.<br>S.M. in Electrical Engineering
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Hisek, Joerg. "Physical characteristics of thin film CuInSe2 prepared by DC magnetron sputtering." Thesis, University of Salford, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491038.

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This work presents investigations into the possibility of using the method of DC magnetron sputtering for the deposition of CuInSei (CIS) thin films. Two different approaches have been used for the suitability of manufacturing stoichiometric CIS layers. For both cases the target material consisted of non-stoichiometric CIS powder.
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Yilmaz, Sibel. "Thin film CDTE solar cells deposited by pulsed DC magnetron sputtering." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/31838.

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Thin film cadmium telluride (CdTe) technology is the most important competitor for silicon (Si) based solar cells. Pulsed direct current (DC) magnetron sputtering is a new technique has been developed for thin film CdTe deposition. This technique is industrially scalable and provides uniform coating. It is also possible to deposit thin films at low substrate temperatures. A series of experiments are presented for the optimisation of the cadmium chloride (CdCl2) activation process. Thin film CdTe solar cells require CdCl2 activation process to improve conversion efficiencies. The role of this activation process is to increase the grain size by recrystallisation and to remove stacking faults. Compaan and Bohn [1] used the radio-frequency (RF) sputtering technique for CdTe solar cell deposition and they observed small blisters on CdTe layer surface. They reported that blistering occurred after the CdCl2 treatment during the annealing process. Moreover, void formation was observed in the CdTe layer after the CdCl2 activation process. Voids at the cadmium sulphide (CdS)/CdTe junction caused delamination hence quality of the junction is poor. This issue has been known for more than two decades but the mechanisms of the blister formation have not been understood. One reason may be the stress formation during CdTe solar cells deposition or during the CdCl2 treatment. Therefore, the stress analysis was performed to remove the defects observed after the CdCl2 treatment. This was followed by the rapid thermal annealing to isolate the CdCl2 effect by simply annealing. Small bubbles observed in the CdTe layer which is the first step of the blister formation. Using high resolution transmission electron microscopy (HR-TEM), it has been discovered that argon (Ar) working gas trapped during the deposition process diffuses in the lattice which merge and form the bubbles during the annealing process and grow agglomeration mainly at interfaces and grain boundaries (GBs). Blister and void formation were observed in the CdTe devices after the CdCl2 treatment. Therefore, krypton (Kr), neon (Ne) gases were used as the magnetron working gas during the deposition of CdTe layer. The results presented in this thesis indicated that blister and void formation were still existing with the use of Kr an Ne. Xe, which has a higher atomic mass than Kr, Ne, Ar, Cd and Te, was used as the magnetron working gas and it resulted in surface blister and void free devices.
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Souza, Thatyara Freire de. "Crescimento de filmes nanom?tricos monocristalinos de Fe/MgO(100) por "SPUTTERING" DC." Universidade Federal do Rio Grande do Norte, 2007. http://repositorio.ufrn.br:8080/jspui/handle/123456789/16661.

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Made available in DSpace on 2014-12-17T15:15:05Z (GMT). No. of bitstreams: 1 ThatyaraFS.pdf: 1656842 bytes, checksum: a24e627a4eabea4a6ac67cca1f9790f8 (MD5) Previous issue date: 2007-07-16<br>Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico<br>The research behind this master dissertation started with the installation of a DC sputtering system, from its &#64257;rst stage, the adaptation of a refrigerating system, passing by the introduction of a heating system for the chamber using a thermal belt, until the deposition of a series of Fe/MgO(100) single crystal nanometric &#64257;lm samples. The deposition rates of some materials such as Fe, Py and Cu were investigated through an Atomic Force Microscope (AFM). For the single crystal samples, &#64257;ve of them have the same growth parameters and a thickness of 250?, except for the temperature, which varies from &#64257;fty degrees from one to another, from 100?C to 300?C. Three other samples also have the same deposition parameters and a temperature of 300?C, but with thickness of 62,5?, 150?, and 250?. Magneto-optical Kerr E&#64256;ect (MOKE) of the magnetic curves measurements and Ferromagnetic Resonance (FMR) were made to in order to study the in&#64258;uence of the temperature and thickness on the sample s magnetic properties. In the present dissertation we discuss such techniques, and the experimental results are interpreted using phenomenological models, by simulation, and discussed from a physical point of view, taking into account the system s free magnetic energy terms. The results show the growth of the cubic anisotropy &#64257;eld (Hac) as the sample s deposition temperature increases, presenting an asymptotic behavior, similar to the characteristic charging curve of a capacitor in a RC circuit. A similar behavior was also observed for the Hac due to the increase in the samples thicknesses. The 250&#730;A sample, growth at 300?C, presented a Hac &#64257;eld close to the Fe bulk value<br>Os trabalhos desta disserta??o tiveram in?cio com a instala??o de um sistema de sputtering DC, desde a sua etapa inicial, a adapta??o de um sistema de refrigera??o, passando pela implanta??o de um sistema de aquecimento da c?mara atrav?s de uma cinta t?rmica envolvendo a mesma, at? a deposi??o de uma s?rie de amostras de filmes nanom?tricos monocristalinos de Fe/MgO(100). Foram investigadas as taxas de deposi??o para alguns materiais como Fe, Py e Cu, atrav?s de um microsc?pio de for?a at?mica (AFM). Dentre as amostras monocristalinas, cinco possuem praticamente todos os par?metros de crescimento iguais e espessura de 250?, exceto pela temperatura de deposi??o que varia de cinquenta graus de uma pra outra, desde 100?C a 300?C. Outras tr?s amostras possuem os mesmos par?metros de deposi??o e temperatura de 300?C, mas espessuras de 62,5?, 150? e 250?. Foram realizadas medidas das curvas de magnetiza??o por efeito kerr (MOKE) e espectros de resson?ncia ferromagn?nica (FMR) para an?lise da influ?ncia da temperatura de crescimento e da espessura nas propriedades magn?ticas das amostras. ? feita uma abordagem sobre tais t?cnicas durante a disserta??o e os resultados experimentais s?o interpretados de acordo com modelos fenomenol?gicos via simula??o. E discutidos do ponto de vista f?sico, levando em conta os termos da energia livre magn?tica do sistema. Os resultados demonstraram o crescimento do campo de anisotropia c?bica Hac em rela??o ao aumento da temperatura de deposi??o das amostras, apresentando um comportamento assint?tico, semelhante ? curva caracter?stica de carga para um capacitor em um circuito RC. Um comportamento semelhante foi observado para o valor de Hac em fun??o do aumento de espessura das amostras. A amostra de 250?, crescida a 300?C apresentou campo Hac pr?ximo ao do valor para o Fe bulk
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Wright, Jason. "Design and Implementation of DC Magnetron Sputter Deposition System and Hall Effect System Via LabView." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1417605695.

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Heimke, Bruno. "RF überlagertes DC-Sputtern von transparenten leitfähigen Oxiden." Doctoral thesis, Universitätsbibliothek Chemnitz, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-116687.

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Die vorliegende Dissertation befasst sich mit dem RF- überlagerten DC-Sputtern von Indiumzinnoxid und aluminiumdotierten Zinkoxid. Bei dem dafür entwickelten synchron gepulsten RF/DC-Verfahren werden die zu untersuchenden Materialien gleichzeitig mit Hilfe eines RF- und eines PulsDC-Generators gesputtert. Ein wesentliches Resultat der Untersuchungen ist, dass durch RF- überlagertes DCSputtern Schichten abgeschieden werden können, die im Vergleich zum DC- bzw. PulsDC-Sputtern geringere spezifische Widerstände aufweisen. Dies ist auf eine Verringerung von Defekten in den abgeschiedenen Schichten zurückzuführen. Es konnte anhand der Untersuchungen gezeigt werden, dass fur die Abscheidung von Indiumzinnoxid und aluminiumdotiertem Zinkoxid die Substrattemperatur beim RF überlagerten DC-Sputtern gegenüber dem DC-Sputtern um bis zu 100°C verringert werden kann.
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Hsieh, Peter Y. (Peter Yaw-ming) 1975. "DC magnetron reactive sputtering of low stress AlN piezoelectric thin films for MEMS application." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9736.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (p. 59-60).<br>Microelectromechanical systems (MEMS) often incorporate piezoelectric thin films to actuate and detect motion of mechanical structures. Aluminum nitride is advantageous for MEMS use because it can be deposited at low temperatures, is easily patterned using conventional photolithographic techniques, and is compatible with CMOS contaminant requirements for silicon IC foundries. In this work, AIN thin films were deposited on silicon for use in a MEMS ultrasonic resonator. The resonator is configured as a gravimetric chemical sensor. A rotatable central composite designed experiment was performed to optimize film properties affecting device performance: film crystallinity, stress, and uniformity. Film property response characterization was conducted with x-ray diffractometry, spectroscopic ellipsometry, and surface profilometry. Optimization of film deposition parameters improved AIN film properties in the MEMS sensors. Film property characterization using response surface methodology indicated microstructural changes due to sputtered particle bombardment of the growing film surface. Surface morphology of the sputtered AIN films was assessed using tapping mode atomic force microscopy and scanning electron microscopy. Energetic particle bombardment of the growing film surface helped to yield dense crystalline films with zone T microstructure. Thermalization of the impinging particle flux resulted in voided films with zone 1 microstructure with inferior film properties. Correlation between film crystallinity and oxygen content was explored with x-ray photoelectron spectrometry. Changes in film microstructure and composition are correlated with variations in deposition parameters. Adatom mobility during film growth appears to play an important role in determining final film properties.<br>by Peter Y. Hsieh.<br>S.M.
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Tafur, Anzualdo Gelacio Albino. "Propiedades ópticas de nanocompuestos basados en plata, producidas por técnicas DC y RF Magnetrón Sputtering." Universidad Nacional de Ingeniería. Programa Cybertesis PERÚ, 2011. http://cybertesis.uni.edu.pe/uni/2011/tafur_ag/html/index-frames.html.

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En esta tesis, reportamos la producción experimental de nanocompuestos plata-dieléctrico usando las técnicas dc y rf magnetrón sputtering, así como, la evolución de la resonancia plasmónica en nanopartículas de plata dentro de los nanocompuestos, en función de las dimensiones de las nanopartículas. Nuestros nanocompuestos están constituidos por la intercalación de capas dieléctricas (Teflón, TiO2 o a-c) hechas usando rf magnetrón sputtering con capas de nanocristales de plata hechos por dc magnetrón sputtering. Obtuvimos nanopartículas de diferentes dimensiones cambiando la corriente dc del plasma durante la deposición. La composición química y la estructura de los materiales fue analizada por espectroscopía fotoelectrónica de rayos X y difracción de rayos X, respectivamente. La espectrofotometría UV-visible en el rango 350-1200 nm fue utilizada para estudiar la evolución de la resonancia plasmónica. Los espectros de transmitancia T(λ) y reflectancia R(λ) fueron obtenidos experimentalmente y a partir de ellos se calculó el espectro de absortancia. Hemos podido observar picos de absorción correspondientes a resonancia plasmónica dipolar, cuadrupolar y octupolar. .
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Carmo, Danusa do. "Produção de filmes supercondutores de nióbio e de sistemas híbridos crescidos por Magnetron Sputtering DC." Universidade Federal de Santa Maria, 2012. http://repositorio.ufsm.br/handle/1/9225.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico<br>Currently, several research groups have been devoted to the production of superconducting films. This interest lies on the facility of their manipulation, on the understanding of basic concepts of the superconductivity and, especially, in the possibility of reducing them to dimensions compatible to their application as devices. Therefore, there is a great technological and academic interest in this issue. The most used material in superconducting devices is the niobium (Nb) and its alloys. Although Nb has been known as superconductor since 1930, the interest in excellent films of this material still remains. In this work, using a DC magnetron sputtering technique, we have developed an experimental method that allows one to produce superconducting Nb films of good quality - transition temperature of 9.1 K and transition width of 0.2 K. Therefore, we performed a systematic study of the setup parameters that influences the structural and superconducting properties of the films. In particular, we have analyzed the evolution of the lattice parameter, average grain size crystalline and critical temperature. Such values have been compared in a diagram. Nb films exhibit flux avalanches at certain values of field and temperature. We have detected and visualized the occurrence of avalanches of magnetic flux in Nb films and, in order to suppress the abrupt flux penetration, we have coupled to the films of thickness of 200 nm, thick metal layers of aluminum, silver and copper of different thicknesses, so called hybrid systems - Superconductor/Normal Metal. In this work piece, two experimental techniques have been employed: magnetometry and magneto-optical imaging. A partial suppression of avalanches in the hybrid systems has been observed.<br>Atualmente, diversos grupos de pesquisa têm se dedicado à fabricação de filmes supercondutores. O interesse reside na facilidade de manipulação, no entendimento de conceitos básicos do fenômeno da supercondutividade e, principalmente, na possibilidade de reduzi-los a dimensões compatíveis à aplicação como dispositivos. Portanto, há um grande interesse acadêmico e tecnológico nesta área. O material mais utilizado na construção de dispositivos supercondutores é o nióbio (Nb) e suas ligas. Apesar do Nb ser conhecido como supercondutor desde 1930, o interesse em excelentes filmes desse material ainda persiste. Neste trabalho, utilizamos a técnica de magnetron sputtering DC, com a qual estabelecemos uma rotina experimental que possibilitou produzir filmes supercondutores de Nb de boa qualidade - temperatura crítica de 9,1 K e largura de transição de 0,2 K. Para tanto, realizamos um estudo sistemático de como os valores dos parâmetros experimentais influenciam nas propriedades estruturais e supercondutoras dos filmes. Em particular, analisamos a evolução do parâmetro de rede, do tamanho médio dos grãos cristalinos e da temperatura crítica com os valores das variáveis de deposição e, por conseguinte, comparamos esses valores em um diagrama. Filmes de Nb exibem avalanches de fluxo magnético quando submetidos a certos valores de campo e temperatura. Detectamos e visualizamos a ocorrência de avalanches de fluxo magnético nos filmes de Nb produzidos e, com o intuito de suprimir as penetrações abruptas de fluxo, acoplamos a filmes de 200 nm de espessura camadas metálicas de alumínio, prata e cobre de diferentes espessuras, denominados sistemas híbridos - Supercondutor/Metal Normal. Este estudo foi conduzido por meio de duas técnicas experimentais: magnetometria volumétrica e imageameto magneto-ótico. Observamos uma supressão parcial das avalanches de fluxo magnético nos sistemas híbridos.
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Books on the topic "DC sputtering"

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Nakano, Hiroshi. DC-SQUIDs fabricated by shapes of sputtering deposition at step edge and anodic oxidization. [Kyushu University Research Institute of Fundamental Information Science, 1986.

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DC Magnetron Reactive Sputtering of Low Stress AlN Piezoelectric Thin Films for MEMS Application. Storming Media, 1999.

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Book chapters on the topic "DC sputtering"

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Ramos, Marco César Maicas, and María del Mar Sanz Lluch. "High-Flux DC Magnetron Sputtering." In Gas-Phase Synthesis of Nanoparticles. Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527698417.ch8.

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Formigoni, Napo. "Silicon Nitride Films Formed with DC-Magnetron Reactive Sputtering." In Disorder and Order in the Solid State. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1027-3_17.

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Deepak Raj, P., Sudha Gupta, and M. Sridharan. "Studies on Nanostructured V2O5 Deposited by Reactive DC Magnetron Sputtering." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_144.

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Aouadi, K., C. Nouveau, A. Besnard, B. Tlili, A. Montagne, and M. Chafra. "Characterization of CrAlN Films Synthesized by DC Reactive Magnetron Sputtering." In Lecture Notes in Mechanical Engineering. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-52071-7_40.

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Larsson, G., T. I. Selinder, U. Helmersson, and S. Rudner. "Reproducible Fabrication of YBa2Cu3O6+δ Thin Films by DC Magnetron Sputtering." In Science and Technology of Thin Film Superconductors 2. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_12.

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Shen, Yao Gen. "Microstresses in Molybdenum Nitride Thin Films Deposited by Reactive DC Magnetron Sputtering." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-969-5.589.

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Aouadi, K., B. Tlili, C. Nouveau, A. Besnard, and M. Chafra. "Characterization of CrN/CrAlN/Cr2O3 Multilayers Coatings Synthesized by DC Reactive Magnetron Sputtering." In Lecture Notes in Mechanical Engineering. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-27146-6_63.

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Zahari, Finn, Seongae Park, Mamathamba K. Mahadevaiah, Christian Wenger, Hermann Kohlstedt, and Martin Ziegler. "Redox-Based Bi-Layer Metal Oxide Memristive Devices." In Springer Series on Bio- and Neurosystems. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_3.

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AbstractIn a memristor or a so-called memristive device, the resistance state depends on the previous charge flow through the device. The new resistance state is stored and classifies a memristor as a non-volatile memory device. This likewise unique and simple feature qualifies memristive devices as attractive compartments with regard to the development of a universal memory and beyond von Neumann computing architectures, including in-memory computing and neuromorphic circuits. In this chapter, we present studies on two kinds of bi-layer metal oxide memristive devices with the layer sequences Nb/NbO$$_{\textrm{z}}$$ z /Al$$_2$$ 2 O$$_3$$ 3 /Nb$$_{\textrm{x}}$$ x O$$_{\textrm{y}}$$ y /Au and TiN/TiO$$_\textrm{x}$$ x /HfO$$_\textrm{x}$$ x /Au, either prepared by reactive DC-magnetron sputtering, etching and optical lithography. It is shown that the memristive properties of such devices can be engineered, which enables tailoring of the memristive devices for particular applications.
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Lin, R. J., and P. T. Wu. "In-Situ Growth of Y-Ba-Cu-O Films by High Pressure DC Sputtering." In Science and Technology of Thin Film Superconductors 2. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_15.

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Riah, B., A. Ayad, J. Camus, M. A. Djouadi, and N. Rouag. "Textured Growth of AlN Films Deposited on Si(100) by DC Reactive Magnetron Sputtering and by High Power Impulse Magnetron Sputtering (HiPIMS)." In Proceedings of the 6th International Conference on Recrystallization and Grain Growth (ReX&GG 2016). Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-48770-0_44.

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Conference papers on the topic "DC sputtering"

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Garbarino, Joseph, John G. Jones, Peter R. Stevenson, Cynthia T. Bowers, Krishnamurthy Mahalingam, and Lyuba Kuznetsova. "Electrically Tunable TiN/SiO2 Metamaterials." In Frontiers in Optics. Optica Publishing Group, 2024. https://doi.org/10.1364/fio.2024.jw5a.62.

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Electrically tunable TiN/SiO2/TiN epsilon-near-zero photonic structures were fabricated using DC magnetron sputtering. Reflectance spectra in visible/near-IR for bulk and multilayered TiN/SiO2/TiN structures with optimal parameters exhibit spectral shift at the epsilon-near-zero spectral point up to ~10 nm due to applied voltage (12 V).
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Williams, F. L., H. D. Nusbaum, and B. J. Pond. "New method of arc suppression for reactive-dc-magnetron sputtering." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.fh4.

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Modulated-dc-magnetron sputtering offers a novel solution to problems associated with arcing on the surface of the sputtering target. Arcing has been identified as a main contributor to defects in thin films produced with low-pressure reactive magnetron-sputtering deposition. By biasing the target with a de potential that is modulated at ultrasonic frequencies, sputtering-target arcing is eliminated so that coatings with fewer defects are produced. In the technique presented here, the output from a de power supply is directed into a modulator circuit that switches the output according to a frequency and duty cycle set by a waveform generator. Thus, the output from the modulator is a time-varying electric potential with its most negative value equal to the output of the power supply and its minimum value equal to zero. Arcing on the sputtering target ceases when the switching frequency exceeds a certain threshold value (typically 10-30 kHz) that is dependent on the deposition parameters. Since modulated-dc-magnetron sputtering is effective at frequencies that are significantly less than the standard rf-sputtering frequency of 13.56 MHz, complications in coupling energy between the power supply and the sputtering target are avoided. Therefore, the efficiency of the sputtering process is dramatically improved compared to rf sputtering.
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Oh, Inki. "Comparison of carbon films between dc glow discharge and dc magnetron sputtering processes." In OSA Annual Meeting. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.thcc8.

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Diamondlike hard carbon coatings were deposited on germanium in a dc plasma discharge vacuum chamber using a hydrogenated hexane fluid. Vapors from the hexane fluid were mixed with argon gases, keeping a 0.1-molar ratio of hexane to argon ions. The dc cathode voltage of 1.0 kV and the gas pressure of 50–100 mTorr were maintained for 30 min for the hard carbon coatings. The deposition process was reproducible and accurately controlled by the two independent parameters: dc cathode voltage V and gas pressure P. On the other hand, amorphous hard carbon films were prepared by dc plasma magnetron sputtering of a graphite target in ultrapure argon gas at a pressure of 5-10 mTorr at a substrate temperature of 100°C. The dc power range was 300-500 W. Both techniques of deposition of carbon films show extreme hardness, chemical inertness, high electrical resistivity, and optical transparency in the IR 8-12-μm region. The carbon films generated with the dc plasma of hydrocarbon gases result in high transmittance values compared with those of films generated by dc magnetron sputtering of graphite targets.
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Lesiuk, Pawel. "Pulsed-DC – New Perspectives for Reactive Sputtering." In 60th Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2018. http://dx.doi.org/10.14332/svc17.proc.42822.

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Udaykumar, K., D. S. Murali, M. K. Jain, and A. Subrahmanyam. "Substrates Prepared by Reactive DC Magnetron Sputtering." In Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2014. http://dx.doi.org/10.14332/svc14.proc.1848.

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Pond, B. J., T. Du, J. Sobczak, and C. K. Carniglia. "Properties of films produced by modulated-dc-magnetron sputtering." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.fh6.

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Reactive-dc-magnetron sputtering has been demonstrated as a viable technique for producing dense films with improved mechanical properties. Recent advances in this process, such as deposition at low pressures and elimination of arcing on the target surface, have resulted in the deposition of films with improved optical properties. Films produced by this technique have very low scatter and absorption values that are comparable to those of ion-beam-sputtered films. Single-layer films of SiO2, Al2O3, Ta2O5, and TiO2 have been deposited and analyzed. The optical and mechanical properties of these films are compared with those of films deposited by ion-beam sputtering and electron-beam evaporation. The films deposited by dc-magnetron sputtering are homogeneous and have excellent index repeatability. This makes it possible to achieve near-theoretical performance in the spectral characteristics of multilayer coatings. A number of multilayer coatings have been produced by this technique, and some of these have physical thicknesses greater than 10 μm. The sensitivity of these coatings to the relative humidity of the surrounding environment was measured, and they were extremely stable.
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Pond, B. J., T. C. Du, J. Sobczak, C. K. Carniglia, and F. L. Williams. "Moisture resistant oxide coating by dc magnetron sputtering." In OSA Annual Meeting. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.tupp3.

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The process of dc magnetron sputtering can lead to the deposition of dense oxide films. Because of the high density of the films, they are resistant to the penetration of moisture. Improvements in magnetron sputtering technology have made it possible to use a lower gas pressure during deposition. This lower pressure reduces the level of water incorporated into the films during deposition. We report the results of a study of single-layer films of the oxides of silicon, aluminum, and titanium. An 8-in. dc magnetron source was used for the deposition. Metal targets were used for each material, and a mixture of argon and oxygen was employed during the deposition. An aluminum dopant was used with the silicon target to minimize contamination. The deposition parameters studied were the target voltage, the total pressure during the deposition, and the partial pressure of the oxygen. Several source geometries were tested in an attempt to optimize the deposition rate. Moisture content of the films was determined by spectral transmission scans over the water absorption bands at 2.7 μm. For total pressures of 2 × 10-4 Torr or less, the films were found to be free of water.
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Alrashdan, Mohd H. S., Azrul Azlan Hamzah, Burhanuddin Yeop Majlis, and Mohd Faizal Aziz. "Aluminum nitride thin film deposition using DC sputtering." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920798.

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Tuan, Pham H., and Dang X. Cu. "Thick silver coating deposited by DC magnetron sputtering." In Optical Systems Design, edited by Claude Amra, Norbert Kaiser, and H. Angus Macleod. SPIE, 2004. http://dx.doi.org/10.1117/12.512891.

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Gillet, D., O. D. Crisalle, and D. Bonvin. "Run-to-run control of DC-sputtering processes." In Proceedings of American Control Conference. IEEE, 2001. http://dx.doi.org/10.1109/acc.2001.946035.

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Reports on the topic "DC sputtering"

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Bajt, S., J. Alameda, S. Baker, and J. Taylor. Growth of thick, crystalline material using dc-magnetron sputtering in Mag1 deposition chamber. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/883838.

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Prater, W. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/839624.

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Snow, G. Characterization of dc magnetron sputtering systems for the deposition of tantalum nitride, titanium, and palladium thin films for HMC (hybrid microcircuit) applications. Office of Scientific and Technical Information (OSTI), 1989. http://dx.doi.org/10.2172/5884585.

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Green, K. M. Determination of ionization fraction and plasma potential in a dc magnetron sputtering system using a quartz crystal microbalance and a gridded energy analyzer. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/531049.

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