Relevant bibliographies by topics / Electrical measurements C-V and G-V / Journal articles
To see the other types of publications on this topic, follow the link: Electrical measurements C-V and G-V.

Journal articles on the topic 'Electrical measurements C-V and G-V'

Author: Grafiati
Published: 13 July 2024
Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Electrical measurements C-V and G-V.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Özden, Şadan, Ömer Güllü, and Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices." European Physical Journal Applied Physics 82, no. 2 (2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.

Full text
Abstract:
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhom
APA, Harvard, Vancouver, ISO, and other styles
2

Padma, R., and V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode." Физика и техника полупроводников 51, no. 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.

Full text
Abstract:
The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the
APA, Harvard, Vancouver, ISO, and other styles
3

Faraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur, and Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode." Advances in Condensed Matter Physics 2020 (April 13, 2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.

Full text
Abstract:
The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with dio
APA, Harvard, Vancouver, ISO, and other styles
4

Altındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, et al. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation." Physica Scripta 96, no. 12 (2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.

Full text
Abstract:
Abstract The effect of 60Co-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I–V) and capacitance/conductance-voltage (C/G–V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I–V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec–Ess) profile was extracted from I–V data co
APA, Harvard, Vancouver, ISO, and other styles
5

Padovani, Andrea, Ben Kaczer, Milan Pesic, et al. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements." IEEE Transactions on Electron Devices 66, no. 4 (2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Koliakoudakis, C., J. Dontas, S. Karakalos, et al. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.

Full text
Abstract:
The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.
APA, Harvard, Vancouver, ISO, and other styles
7

Pananakakis, G., and G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements." Surface Science Letters 168, no. 1-3 (1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Pananakakis, G., and G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements." Surface Science 168, no. 1-3 (1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Afandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva та Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements". Microelectronic Engineering 85, № 2 (2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Giannazzo, Filippo, Stefan Hertel, Andreas Albert, et al. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts." Materials Science Forum 778-780 (February 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.

Full text
Abstract:
Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level pho
APA, Harvard, Vancouver, ISO, and other styles
11

DAŞ, Elif. "Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode." Sakarya University Journal of Science 26, no. 5 (2022): 1000–1009. http://dx.doi.org/10.16984/saufenbilder.1129742.

Full text
Abstract:
In this study, polythiophene-graphene (PTh-G) composite thin film was prepared on the n-type silicon (n-Si) semiconductor wafer by the spin coating method. Subsequently, the current-voltage (I-V) measurements were made on the fabricated Au/PTh-G/n-Si/Al device to ascertain the impact of the PTh-G interfacial layer on the device performance. The main device parameters such as ideality factor (n), barrier height (b), series resistance (Rs) were calculated by using the thermionic emission (TE) and Norde functions, and then, the obtained results were discussed in detail. Additionally, the capacit
APA, Harvard, Vancouver, ISO, and other styles
12

Kaya, A., Ö. Sevgili, and Ş. Altındal. "Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method." International Journal of Modern Physics B 28, no. 17 (2014): 1450104. http://dx.doi.org/10.1142/s0217979214501045.

Full text
Abstract:
Au /n-type 4H - SiC diodes were fabricated and their electrical characteristics have been investigated by using the capacitance/conductance-voltage-frequency (C–V–f and G/w–V–f) measurements method at room temperature. The main parameters such as the doping atoms (ND), diffusion potential (VD) and barrier height (ΦB(C–V)) values were obtained from the reverse bias C-2–V plots for each frequency. C and G/ω values decrease with increasing frequency as almost exponential for each voltage and these changes in C and G/ω are considerably high at low frequencies due to the contribution of surface sta
APA, Harvard, Vancouver, ISO, and other styles
13

Demirbilek, Nihat, Fahrettin Yakuphanoğlu, and Mehmet Kaya. "Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes." Materials Testing 63, no. 3 (2021): 279–85. http://dx.doi.org/10.1515/mt-2020-0042.

Full text
Abstract:
Abstract Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped ZnO:Alx:Cuy with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/ω)-V and phototransient current (I-t, C-t) measurements. The Φ b(I-V),
APA, Harvard, Vancouver, ISO, and other styles
14

Çetinkaya, H. G., D. E. Yıldız, and Ş. Altındal. "On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity." International Journal of Modern Physics B 29, no. 01 (2014): 1450237. http://dx.doi.org/10.1142/s0217979214502373.

Full text
Abstract:
In order to see the effect of interfacial layer on electrical characteristics both Au /n–4 H – SiC (MS) and Au/TiO 2/n–4 H – SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical parameters were investigated by using the forward and reverse bias current-voltage (I–V), capacitance/conductance-voltage (C/G–V) measurements at room temperature. The ideality factor (n), series and shunt resistances (Rs, Rsh), barrier height (BH), depletion layer width (WD) and the concentration of donor atoms (ND) were obtained before and after illumination. The energy density dist
APA, Harvard, Vancouver, ISO, and other styles
15

Lök, Ramazan. "Investigation of Interface States, Series Resistance and Barrier Height Variation with Frequency in Al/WO3/p-Si (MOS) Capacitors." Journal of the Institute of Science and Technology 14, no. 4 (2024): 1515–26. http://dx.doi.org/10.21597/jist.1529537.

Full text
Abstract:
In the study, Tungsten oxide (WO3) was synthesized via the sol-gel method on P-type 〈100〉 silicon wafer. Electrical characterization of the Al/WO3/p-Si (MOS) capacitor was performed through capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at different frequencies (from 50 kHz to 1 MHz). As the applied voltage frequency increased, the maximum values of the measured C-V and G/ω-V characteristics decreased. This phenomenon was attributed to interface state trap (Dit) charges following low-frequency AC voltage signals. The variation of series resistance (Rs) and barrier heigh
APA, Harvard, Vancouver, ISO, and other styles
16

Güler, G., Ö. Güllü, S. Karataş, and Ö. F. Bakkaloǧlu. "Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I – V and C – V Measurements." Chinese Physics Letters 26, no. 6 (2009): 067301. http://dx.doi.org/10.1088/0256-307x/26/6/067301.

Full text
APA, Harvard, Vancouver, ISO, and other styles
17

Mazurak, Andrzej, Jakub Jasin´ski, and Bogdan Majkusiak. "Determination of border/bulk traps parameters based on (C-G-V) admittance measurements." Journal of Vacuum Science & Technology B 37, no. 3 (2019): 032904. http://dx.doi.org/10.1116/1.5060674.

Full text
APA, Harvard, Vancouver, ISO, and other styles
18

Özdemir, Orhan, Beyhan Tatar, Deneb Yılmazer, Pınar Gökdemir та Kubilay Kutlu. "Correlation of DC and AC electrical properties of Al/p-Si structure by I–V–T and C(G/ω)–V–T measurements". Materials Science in Semiconductor Processing 12, № 4-5 (2009): 133–41. http://dx.doi.org/10.1016/j.mssp.2009.09.005.

Full text
APA, Harvard, Vancouver, ISO, and other styles
19

Khelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida, and Jamal Bougdira. "Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction." Defect and Diffusion Forum 406 (January 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.

Full text
Abstract:
In the present work we have reported the realization and characterization of CH3NH3PbI3/c-Si heterojunction. It was achieved by deposing CH3NH3PbI3 perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series
APA, Harvard, Vancouver, ISO, and other styles
20

Khelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida, and Jamal Bougdira. "Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction." Defect and Diffusion Forum 406 (January 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.

Full text
Abstract:
In the present work we have reported the realization and characterization of CH3NH3PbI3/c-Si heterojunction. It was achieved by deposing CH3NH3PbI3 perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series
APA, Harvard, Vancouver, ISO, and other styles
21

Thi, Tran Anh Tuan, Dong-Hau Kuo, Phuong Thao Cao, Pham Quoc-Phong, Vinh Khanh Nghi, and Nguyen Phuong Lan Tran. "Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode." Coatings 9, no. 10 (2019): 685. http://dx.doi.org/10.3390/coatings9100685.

Full text
Abstract:
The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of the electrodes, insulator SiO2 layer, and p-GaN were found to be ~250 nm, 70 nm, and 1 µm, respectively. By Hall measurement of a p-Mg-GaN film on an SiO2/Si (100) substrate at room temperature, the hole’s concentration (Np) and carrier mobility (μ) were found to be Np = 4.32 × 1016 cm−3 and μ = 7.52 cm2·V−1·s−1, respectively. The atomic force microsco
APA, Harvard, Vancouver, ISO, and other styles
22

Cañas, J., C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez, and E. Gheeraert. "High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors." Applied Physics Letters 121, no. 7 (2022): 072101. http://dx.doi.org/10.1063/5.0103037.

Full text
Abstract:
Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-type (100) oriented diamond and SiO2 grown by atomic layer deposition. A detailed electrical characterization consisting of I–V, C–V, and C–F was performed in order to analyze the electrical properties of the structure. The MOS capacitor presented no detectable leakage current in forward and very low leakage current in reverse sustaining at least 6 MV/cm without degradation. The C–V measurements showed depletion and deep depletion regimes in forward and accumulation regimes in reverse, with a low density of
APA, Harvard, Vancouver, ISO, and other styles
23

Alexandrova, S., and A. Szekeres. "Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon." Solid State Phenomena 159 (January 2010): 163–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.163.

Full text
Abstract:
In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thic
APA, Harvard, Vancouver, ISO, and other styles
24

Kabra, Vinay, Lubna Aamir, and M. M. Malik. "Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization." Beilstein Journal of Nanotechnology 5 (November 24, 2014): 2216–21. http://dx.doi.org/10.3762/bjnano.5.230.

Full text
Abstract:
A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was
APA, Harvard, Vancouver, ISO, and other styles
25

Nakano, Yoshitaka, Liwen Sang, and Masatomo Sumiya. "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications." MRS Proceedings 1635 (2014): 29–34. http://dx.doi.org/10.1557/opl.2014.205.

Full text
Abstract:
ABSTRACTWe have electrically characterized a 300 nm-thick unintentionally-doped In0.09Ga0.91N film grown by metal-organic chemical vapor deposition on a GaN template, employing capacitance-voltage (C-V), thermal admittance spectroscopy (TAS), and steady-state photocapacitance spectroscopy (SSPC) techniques on Schottky barrier diodes. TAS measurements revealed a degenerating-like shallow-donor defect with a thermal activation energy of ∼7 meV, which most likely acts as a source of residual carriers with their concentration of ∼1017 cm-3 determined from C-V measurements. Additionally, SSPC measu
APA, Harvard, Vancouver, ISO, and other styles
26

HIROSE, Fumihiko, Yasuo KIMURA, and Michio NIWANO. "P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements." IEICE Transactions on Electronics E92-C, no. 12 (2009): 1475–78. http://dx.doi.org/10.1587/transele.e92.c.1475.

Full text
APA, Harvard, Vancouver, ISO, and other styles
27

Ryu, K., I. Kymissis, V. Bulovic, and C. G. Sodini. "Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements." IEEE Electron Device Letters 26, no. 10 (2005): 716–18. http://dx.doi.org/10.1109/led.2005.854394.

Full text
APA, Harvard, Vancouver, ISO, and other styles
28

Bahari, Ali, Masoud Ebrahimzadeh, and Reza Gholipur. "Structural and electrical properties of zirconium doped yttrium oxide nanostructures." International Journal of Modern Physics B 28, no. 16 (2014): 1450102. http://dx.doi.org/10.1142/s0217979214501021.

Full text
Abstract:
A synthetic process for the formation of Zr x Y 1-x O y nanostructures is demonstrated by the reaction of yttrium nitrate hexahydrate with zirconium propoxide. The reactions are carried out at temperature 60°C and pressure 0.1 MPa. The energy dispersive X-ray (EDX) spectroscopy measurements confirm formation of Zr x Y 1-x O y nanostructures and the presence of carbonate and hydroxide species which are removed after high temperature anneals. It was found that the oxygen pressure during synthesis plays a determinant role on the structural properties of the nanostructure. This effect is further s
APA, Harvard, Vancouver, ISO, and other styles
29

Belkouch, S., L. Paquin, A. Deneuville, and E. Gheeraert. "Caractérisation physicochimique et électronique de la structure Pt–a-Si: H–c-Si(n)." Canadian Journal of Physics 69, no. 3-4 (1991): 357–60. http://dx.doi.org/10.1139/p91-060.

Full text
Abstract:
Infrared absorption spectra, and electrical measurements I(V, T) and C(V) at 100 Hz of the Pt–a-Si:H–c-Si structure are presented. The thickness, d, of the hydrogenated amorphous silicium, a-Si:H, varies between 4800 and 180 Å(1 Å = 10−10 m). Infrared absorption measurements on a-Si:H show that with the decrease in d there is an increase in the number of defects and the hydrogen concentration on Si-H sites. The electrical results I(V, T) show a Schottky-like structure whose ideality factor increases with decreasing T, but remains limited even for small values of d (1.4 at 300 K for d = 180 Å).
APA, Harvard, Vancouver, ISO, and other styles
30

Bita, Bogdan, Sorin Vizireanu, Daniel Stoica, et al. "On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition." Journal of Nanomaterials 2020 (October 1, 2020): 1–6. http://dx.doi.org/10.1155/2020/8814459.

Full text
Abstract:
In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N2) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D′-band, 2D-
APA, Harvard, Vancouver, ISO, and other styles
31

Alisha, P. Chander, V. K. Malik, and R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films." Journal of Physics: Conference Series 2518, no. 1 (2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.

Full text
Abstract:
Abstract In the present study, SiC films are fabricated by a cost-effective and simple approach of RF magnetron sputtering. The fabrication of SiC thin films is carried out at 900 °C in 5mT Ar atmosphere at 150W power. Thus, the thin films are produced at lower temperature and toxic free environment than conventional methods. The structural characterizations of thin films are performed using XRD, XPS, FE-SEM and EDS techniques. A Metal-Semiconductor-Metal (MSM) junction is fabricated using gold electrodes by shadow sputtering in point contact geometry. The electrical transport properties of th
APA, Harvard, Vancouver, ISO, and other styles
32

Tokusu, Toji, Hirokazu Miyabayashi, Yuji Hiruma, Hajime Nagata, and Tadashi Takenaka. "Electrical Properties and Piezoelectric Properties of CaBi2Ta2O9-Based Ceramics." Key Engineering Materials 421-422 (December 2009): 46–49. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.46.

Full text
Abstract:
Electrical and piezoelectric properties of CaBi2Ta2O9-based ceramics have been studied. Temperature dependence of dielectric properties indicated that the Curie temperature, TC, was 923°C. Coercive field, EC, and remanent polarization, Pr, became saturated with increasing temperature. It is expected that higher-temperature than 250°C could promote the domain wall motion during the poling treatment. From resonance and antiresonance measurements, piezoelectric properties such as the maximum phase, max, electromechanical coupling factor, k33, and piezoelectric g constant, g33, were 86.1º, 0.085
APA, Harvard, Vancouver, ISO, and other styles
33

Saleh, Harem, Şenol Kaya, Yalçın Kalkan, Rıfkı Terzioğlu, and Cabir Terzioğlu. "X-Ray Radiation Responses of 4H-SiC MOS with Eu2O3/SiO2 Dual Dielectric." Journal of Advanced Applied Sciences 3, no. 2 (2024): 79–84. https://doi.org/10.61326/jaasci.v3i2.313.

Full text
Abstract:
This study examines the effects of X-ray irradiation on the structural and electrical properties of Eu₂O₃ dielectric thin films deposited on SiC substrates. The films were exposed to varying radiation durations, and their structural changes were analyzed using X-ray diffraction (XRD), while electrical properties were evaluated through capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. The results revealed that increased radiation exposure led to an increase in crystalline size and lattice strain, attributed to local heating and atomic rearrangements caused by radiation. El
APA, Harvard, Vancouver, ISO, and other styles
34

Zhang, Shiyu, Zeng Liu, Yuanyuan Liu, et al. "Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes." Micromachines 12, no. 3 (2021): 259. http://dx.doi.org/10.3390/mi12030259.

Full text
Abstract:
In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (Ron), Schottky barrier height (ϕB), the ideal factor (n), series resistance (Rs) and the carrier concentration (Nd) by analyzing the current density–volta
APA, Harvard, Vancouver, ISO, and other styles
35

ALI, A. N. M., and E. M. NASIR. "CHARACTERIZATION OF (ZnO)1-X-(CuO)x/GaAs HETEROJUNCTION SOLAR CELL GROWN BY PULSED LASER DEPOSITION." Digest Journal of Nanomaterials and Biostructures 16, no. 1 (2021): 169–74. http://dx.doi.org/10.15251/djnb.2021.161.169.

Full text
Abstract:
ZnO)1-X-(CuO)x composite films with different x content (0.2, 0.4, 0.6, and 0.8) were prepared through pulse laser deposition method at room temperatures (RT). The (ZnO)1-X- (CuO)x film was deposited on GaAs substrate to form the (ZnO)1-X-(CuO)x / GaAs heterojunction. The influence of varying x content (0.2, 0.4, 0.6, and 0.8) wt.% on characterization of (ZnO)1-X-(CuO)x /GaAs heterojunction solar cell have been investigated. electrical properties of C-V measurements at two frequencies (100, 200) kHz and I-V measurements under dark and light condition have been studied, C-V measurements for het
APA, Harvard, Vancouver, ISO, and other styles
36

De Cogan, D., and A. Alani. "Double-resonance technique for C/V measurements of semiconductor devices." Electronics Letters 21, no. 24 (1985): 1153. http://dx.doi.org/10.1049/el:19850816.

Full text
APA, Harvard, Vancouver, ISO, and other styles
37

DAŞ, Elif, and Gamze Bozkurt. "Investigation of Photo-Electrical Properties in (Fe2O3-G)/n-Si Device." Journal of Anatolian Physics and Astronomy 3, no. 2 (2024): 62–74. https://doi.org/10.5281/zenodo.14344182.

Full text
Abstract:
This study focuses on synthesizing iron oxide-graphene (α-Fe2O3-G) composite materials and evaluating their performance in devices constructed on n-type silicon (n-Si) semiconductors under dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exh
APA, Harvard, Vancouver, ISO, and other styles
38

Selçuk, A. H., E. Orhan, S. Bilge Ocak, A. B. Selçuk, and U. Gökmen. "Investigation of dielectric properties of heterostructures based on ZnO structures." Materials Science-Poland 35, no. 4 (2018): 885–92. http://dx.doi.org/10.1515/msp-2017-0108.

Full text
Abstract:
Abstract The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained res
APA, Harvard, Vancouver, ISO, and other styles
39

Kumar, Neeraj, and Rabinder Nath. "Ferroelectric and Electrical Properties of Potassium Nitrate Thin Composite Layers." Advanced Materials Research 403-408 (November 2011): 607–17. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.607.

Full text
Abstract:
The ferroelectric and electrical properties of potassium nitrate (KNO3): polyvinylidene fluoride (PVDF) composite layers prepared by melt press method have been studied. The stability of ferroelectric phase (phase –III) of potassium nitrate (KNO3) in the composite layers at room temperature have been analyzed. The temperature dependence of ferroelectric hysteresis loop (P-E) characteristics have been investigated in the composite layers. The electrical conductivity (σ) and dielectric behaviour of composite layers have been characterized. The conductivity and dielectric variation with temperatu
APA, Harvard, Vancouver, ISO, and other styles
40

Thompson, J. R., J. J. Dubowski, and D. J. Northcott. "Electrical characterization of CdTe–InSb heterojunctions." Canadian Journal of Physics 69, no. 3-4 (1991): 274–77. http://dx.doi.org/10.1139/p91-046.

Full text
Abstract:
Planar and vertical transport studies were carried out on samples of epitaxial (001) CdTe grown by pulsed laser evaporation and epitaxy on n- and p-type (001) InSb substrates. Characterization was performed in the temperature range of 4.2–300 K, including Hall effect, current–voltage, and capacitance–voltage measurements. Ohmic contacts to intrinsic CdTe were obtained by application of a AuCl3, aqueous solution. Similar contacts on grown layers showed no Schottky-barrier characteristics. Layers on n-type substrates did not exhibit rectification. Hall effect and resistivity measurements using c
APA, Harvard, Vancouver, ISO, and other styles
41

Porter, L. M., R. F. Davis, J. S. Bow, M. J. Kim, R. W. Carpenter, and R. C. Glass. "Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)." Journal of Materials Research 10, no. 3 (1995): 668–79. http://dx.doi.org/10.1557/jmr.1995.0668.

Full text
Abstract:
Epitaxial thin films (4–1000 Å) of Ti contacts have been deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type, alpha (6H)-SiC(0001). The interfacial chemistry and microstructure, and the electrical properties, were investigated at room temperature and after annealing at 700 °C up to 60 min. High resolution TEM analyses revealed the formation during annealing of reaction zones consisting of Ti5Si3 and TiC. The corresponding electrical properties exhibited considerable stability except after an initial 20 min anneal. Current-voltage (I-V) measurements showed
APA, Harvard, Vancouver, ISO, and other styles
42

Jungwirth, Felix, Daniel Knez, Fabrizio Porrati, et al. "Vanadium and Manganese Carbonyls as Precursors in Electron-Induced and Thermal Deposition Processes." Nanomaterials 12, no. 7 (2022): 1110. http://dx.doi.org/10.3390/nano12071110.

Full text
Abstract:
The material composition and electrical properties of nanostructures obtained from focused electron beam-induced deposition (FEBID) using manganese and vanadium carbonyl precursors have been investigated. The composition of the FEBID deposits has been compared with thin films derived by the thermal decomposition of the same precursors in chemical vapor deposition (CVD). FEBID of V(CO)6 gives access to a material with a V/C ratio of 0.63–0.86, while in CVD a lower carbon content with V/C ratios of 1.1–1.3 is obtained. Microstructural characterization reveals for V-based materials derived from b
APA, Harvard, Vancouver, ISO, and other styles
43

Kim, Minyeong, Nolan Hendricks, Neil Moser, et al. "Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure." ECS Meeting Abstracts MA2023-01, no. 32 (2023): 1840. http://dx.doi.org/10.1149/ma2023-01321840mtgabs.

Full text
Abstract:
Devices based on wide bandgap (WBG) semiconductors like silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3) are ideal for high-power electronics in harsh environments. Among the WBG semiconductors, ultrawide bandgap (UWBG) β-phase gallium oxide (Ga2O3), EG ≈ 4.8 eV, is emerging as a replacement for the current commercially available wide bandgap (WBG) power electronics due to its generational improvements in performance and manufacturing cost [1]. Ga2O3 has a high theoretical breakdown electrical field of 8 MV/cm which in turn gives its Baliga’s figure of merit for power de
APA, Harvard, Vancouver, ISO, and other styles
44

Umar, Marjoni Imamora Ali. "Graphene-Au Film Synthesized from GrO in Au-Aquaeus Solution as Counter Electrode For DSSC Application." Lensa: Jurnal Kependidikan Fisika 7, no. 2 (2019): 24. http://dx.doi.org/10.33394/j-lkf.v7i2.2644.

Full text
Abstract:
The study on the optical, electrical properties of multilayer graphene (MLG) obtained by thermal-reduction of graphene oxide (GrO) which was synthesized directly by mixing graphite oxide (GO) flake in 0.005, 0.01, 0.015, and 0.02 M of Au aqueous solution has been successfully performed. The resultant GrO was subjected to an annealing temperature of 200°C, 400°C, 500°C for 1h to obtain MLG, and G-Au2x, G-Au4x, and G-Au5x (x=.0.005, 0.01, 0.015, and 0.02). The resultant samples were then characterized using FESEM, UV-VIS, four-point probe measurements to study its morphology, optical, and electr
APA, Harvard, Vancouver, ISO, and other styles
45

V., Manjunath, Nanda Kumar Reddy N., Krishna Veni K., Padma Suvarna R., Ananda P., and V. Lakshmaiah M. "Impact of annealing process on electrical characteristics of Ni Schottky rectifiers fabricated on p-type Si." Journal of Indian Chemical Society Vol. 96, Jan 2019 (2019): 85–89. https://doi.org/10.5281/zenodo.5652980.

Full text
Abstract:
Department of Physics, Sri Padmavati Mahila Visvavidyalayam, Tirupati-517 501, Andhra Pradesh, India Department of Physics, Madanapalle Institute of Technology and Science, Madanapalle-517 325, Andhra Pradesh, India <em>E-mail:</em> nandasvu@gmail.com Department of Physics, JNTU College of Engineering, Anantapuram-515 002, Andhra Pradesh, India Department of Physics, Sri Krishnadevaraya University, Anantapuram-515 003, Andhra Pradesh, India <em>Manuscript received online 23 September 2018, accepted 09 October 2018</em> In this work, the electrical parameters of Ni/p-Si SBDs have been investiga
APA, Harvard, Vancouver, ISO, and other styles
46

Pellegrino, Domenico, Lucia Calcagno, Massimo Zimbone, Salvatore Di Franco, and Antonella Sciuto. "Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions." Materials 14, no. 8 (2021): 1966. http://dx.doi.org/10.3390/ma14081966.

Full text
Abstract:
In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can b
APA, Harvard, Vancouver, ISO, and other styles
47

Hong, J. H., and Jae Min Myoung. "Characteristics of HfO2 Dielectric Layer Grown by MOMBE." Materials Science Forum 449-452 (March 2004): 1005–8. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.1005.

Full text
Abstract:
The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels’ existence. Saturation capacitance and leakage current density were in the range of 207 ~ 249 pF and 0.52 ~ 0.58 A/cm2 re
APA, Harvard, Vancouver, ISO, and other styles
48

Faraz, Sadia Muniza, Muhammed Naveed Alvi, Anne Henry, Omer Nour, Magnus Willander, and Qamar Ul Wahab. "Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes." Advanced Materials Research 324 (August 2011): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.324.233.

Full text
Abstract:
The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 °C in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) c
APA, Harvard, Vancouver, ISO, and other styles
49

Stark, Roger, Alexander Tsibizov, Salvatore Race, Thomas Ziemann, Ivana Kovacevic-Badstubner, and Ulrike Grossner. "Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements." Materials Science Forum 1092 (June 6, 2023): 165–70. http://dx.doi.org/10.4028/p-06b54k.

Full text
Abstract:
SiC power MOSFETs show very promising electrical performance for efficient and reliable high temperature operation. This work presents a novel approach for the determination of the temperature dependence of SiC power MOSFET’s channel and drift resistance components in the on-state, which are extracted based on current-voltage (I-V) and capacitance-voltage (C-V) measurements without the need of data extrapolation. The results show that the channel resistance has weak, whereas the drift resistance has strong temperature dependence.
APA, Harvard, Vancouver, ISO, and other styles
50

Karataş, Ş., Ş. Altındal, A. Türüt, and M. Çakar. "Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements." Physica B: Condensed Matter 392, no. 1-2 (2007): 43–50. http://dx.doi.org/10.1016/j.physb.2006.10.039.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the bibliographies on the topic 'Electrical measurements C-V and G-V' for other source types:
Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography