Dissertations / Theses: 'Electro-optic modulators'

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Cui, Yansong. "Gallium arsenide-based traveling wave electro-optic modulators." Thesis, University of Ottawa (Canada), 2004. http://hdl.handle.net/10393/26619.

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This thesis addresses research on the design and modeling of GaAs traveling wave electro-optic modulators with a highly doped layer. These modulators are in the form of a waveguide integrated with Planar Microstrip electrodes (PMS), and of a Mach-Zehnder interferometer integrated with capacitively loaded Coplanar Strips (CPS) electrodes. In both, the use of a thin highly doped layer ensures a good overlap between the applied electric field and optical mode. The design space of both PMS and loaded CPS electrodes are fully characterized. Waveguides of low propagation loss are designed. Wide bandwidth traveling wave modulators require low optical and microwave insertion loss, impedance matching, velocity matching and low half wave voltage. The simulation results predict that modulators with PMS electrodes have a limited frequency response while the modulators with CPS loaded electrodes have an electrical 3 dB bandwidth up to 70 GHz for 1cm device and Vpi of 9.4 V·cm.

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Daniel, Hani S. "Electro-optic waveguide modulators based on the coaxial directional coupler." Thesis, Imperial College London, 1987. http://hdl.handle.net/10044/1/38277.

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Duncan, Roger Glenn. "Electro-Optic Properties of Self-Assembled Non-Linear Optical Polymers." Thesis, Virginia Tech, 2002. http://hdl.handle.net/10919/34415.

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Electrostatic self-assembly was used to fabricate several samples of polymers known to have non-linear optical behavior. These samples characteristics were measured with interferometry and their electro-optic coefficients determined to be on the order that of LiNbO3. The self-assembled samples are shown to have an enhanced polar order compared to that of more traditional poled polymers. Furthermore, this polar order is intrinsic and thus doesn't require electric field poling and does not decay with time. The self-assembly process is therefore shown to possess great potential for the fabrication of high-speed electro-optic modulators for commercial and military applications. Master of Science

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Lim, Desmond Rodney. "Simulation of single mode si waveguides and electro-optic coupling modulators." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/9844.

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Ibarra, Fusté José Antonio. "Design rules and optimization of electro-optic modulators based on coplanar waveguides." Doctoral thesis, Universitat Politècnica de Catalunya, 2014. http://hdl.handle.net/10803/129741.

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Electro-optical traveling wave modulators (EO-TWM) are basic building blocks of the optical communications industry which is leading a revolution in the way we communicate, work and live. As a result, the demand for high-speed data transmission with low driving voltage is continuously growing up with costs that should be kept below a minimum. Besides communications, a growing number of applications for EO-TWM is continuously emerging with equally stringent requirements. This Thesis is concerned with advances in the eld of systematic design and optimization of EO-TWM for coping inverse of the velocity matching constant has been shown to govern the low-loss limit (LL), while in the velocity matching limit (VM), a constant bandwidth times squared-length rule proportional to the inverse of the squared loss constant has been found more appropriate. In this work we provide insights into the trade-o issue in EO-TWM, and a complete picture of the applicable gures of merit for every operative range. Besides the known LL and VM gures of merit, two intermediate ranges, the quasi-low loss (QLL) and the quasi-velocity matching (QVM), have been identi ed. Also novel closed-forms expressions fully accounting for the e ffects of the skin-e ffect electrode loss and optical-electrical wave velocity mismatch, explicitly relating the operative bandwidth and the electrode length in EO-TWM, have been found. Novel bandwidth and electrode-length charts have been created, which constitute a useful tool for the optimization and design of this modulators. A graphical interface tool called MZM-GIT has been built integrating the analytical optimization and design strategies developed throughout the Thesis. With the aid of the MZM-GIT, several proposals of optimized MZM designs based on practical structures described in literature, and also based on the industry trends, are made and analyzed. with the industrial demands. In EO-TWM, the accumulated electro-optic e ect over the optical wave grows with the co-propagated traveling wave (TW) length, allowing to reduce the required RF driving power. However, in typical electro-optic materials for modulators, among which LiNbO3 stands up, due to the natural mismatch between the velocity of the RF and the optical waves, the modulation bandwidth decreases with the TW length, giving place to a well-known trade-o ff. In typical LiNbO3 substrates, in which this Thesis is focused, this trade-off is seen to mainly depend on the values of the electrical loss constant and the e ective wave velocity mismatch in the TW structure that forms the electrodes, usually a coplanar waveguide (CPW). Special emphasis has historically been placed on the optimized design of the CPW in EO-TWM. In this Thesis the study of closed-form expressions for the propagation parameters of CPW as a function of the geometry, has proven useful for the design and optimization procedures sought. Although some interesting approaches to closed-form formulations have been found in literature, none of them completely ful lls the desired requirements of providing a reliable yet simple description of propagation in CPW, appropriate to systematic and easy to follow design rules for EO-TWM, and therefore new simpli ed closed-form expressions for the CPW transmission parameters have been developed. In a second part of the Thesis, the bandwidth-length trade-off has been examined. To date, two bandwidth-length rules have been proposed: a constant bandwidth-length product proportional to the inverse of the velocity matching constant has been shown to govern the low-loss limit (LL), while in the velocity matching limit (VM), a constant bandwidth times squared-length rule proportional to the inverse of the squared loss constant has been found more appropriate. In this work we provide insights into the trade-off issue in EO-TWM, and a complete picture of the applicable fi gures of merit for every operative range. Besides the known LL and VM gures of merit, two intermediate ranges, the quasi-low loss (QLL) and the quasi-velocity matching (QVM), have been identi ed. Also novel closed-forms expressions fully accounting for the e ffects of the skin-eff ect electrode loss and optical-electrical wave velocity mismatch, explicitly relating the operative bandwidth and the electrode length in EO-TWM, have been found. Novel bandwidth and electrode-length charts have been created, which constitute a useful tool for the optimization and design of this modulators. A graphical interface tool called MZM-GIT has been built integrating the analytical optimization and design strategies developed throughout the Thesis. With the aid of the MZM-GIT, several proposals of optimized MZM designs based on practical structures described in literature, and also based on the industry trends, are made and analyzed.

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Lu, Xuejun. "High performance thermo-optic switch and electro-optic modulator based on polymeric multi-mode waveguides with high device packing density for optical network applications." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3034934.

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Khazaei, Hamid Reza. "III-V high-speed electro-optic laser modulators using slow wave structure technique." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0019/NQ48886.pdf.

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Li, Chao. "Silicon-based optical microresonator devices : polygonal microdisk channel filters and electro-optic modulators/switches /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20LI.

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Rahmatian, Farnoosh. "High-speed guided-wave electro-optic modulators and polarization converters in III-V compound semiconductors." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq25142.pdf.

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Zwickel, Heiner [Verfasser], and C. [Akademischer Betreuer] Koos. "Silicon-organic hybrid electro-optic modulators for high-speed communication systems / Heiner Zwickel ; Betreuer: C. Koos." Karlsruhe : KIT-Bibliothek, 2020. http://d-nb.info/1209199084/34.

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Wolf, Stefan [Verfasser]. "Silicon-organic hybrid (SOH) electro-optic modulators for high-speed and power-efficient communications / Stefan Wolf." Karlsruhe : KIT Scientific Publishing, 2018. http://www.ksp.kit.edu.

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Brimont, Antoine Christian Jacques. "Towards Compact and High Speed Silicon Modulators." Doctoral thesis, Universitat Politècnica de València, 2012. http://hdl.handle.net/10251/14345.

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Los moduladores son elementos claves para la transmisión de la señal y el procesamiento de la información. Las técnicas de fabricación avanzadas "complementary metal-oxide semiconductor" (CMOS) permiten reducir drásticamente las dimensiones de estos dispositivos de interés para la implementación a gran escala en un chip de silicito a bajo coste. El trabajo realizado en esta tesis se centra en el diseño, la fabricación y la caracterización de estructuras de onda lenta con el objetivo de realizar moduladores compactos y eficientes integrados en un chip de silicio. El trabajo se divide en cuatro capítulos y un capítulo de conclusión y perspectivas. El capítulo uno introduce los fundamentos de física del estado sólido y de los mecanismos básicos de propagación guiada de la luz por reflexión total interna. El capítulo dos presenta los parámetros importantes de los moduladroes electro-ópticos así como un trabajo de recopilación de todos los mecanismos físicos que pueden ser empleados para modular la luz en silicio. Además, se presenta el estado del arte de los moduladores basados en silicio. El capítulo tres presenta el diseño , fabricación y caracterización de un modulador electro-óptico en silicio compacto y eficiente basado en el efecto de onda lenta en una estructura periódica unidimensional integrada, cuya geometría, similar a la de una red de Bragg, permite reducir la velocidad de grupo de un paquetes de ondas. Dicho efecto, se emplea para incrementar la interacción luz-materia y por lo tanto la eficiencia del modulador electro-óptico. El capítulo cuatro demuestra experimentalmente que dicha guía unidimensional periódica puede ser mejorada a fin de conseguir que el efecto de baja velocidad de grupo suceda en un rango mayor de longitudes de onda para posibles aplicaciones como la multiplexación por división de longitudinal de onda. En el capítulo cinco, se proporcionan conclusiones y perspectivas sobre el trabajo realizado. Brimont ., ACJ. (2011). Towards Compact and High Speed Silicon Modulators [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/14345 Palancia

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Kim, Ryoung-Han. "Design and fabrication of highly efficient electrooptic modulators using bragg grating reflectors." Diss., Texas A&M University, 2005. http://hdl.handle.net/1969.1/3325.

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Bragg grating reflectors etched in amorphous silicon overlay films have been integrated with Ti:LiNbO3 optical waveguides. With a 12.5 mm long grating segment and an etch depth of ~ 93 nm in a 105 nm-thick silicon film, a narrow (0.05 nm) spectral bandwidth with a record high transmission dip (> 20 dB) was achieved at a wavelength of ~1542 nm for TE polarization on an x-cut, y-propagating substrate. The reflectance in the channel waveguides is found to be strongly dependent on the depth of the etched grating. The 3-dB bandwidth of 0.05 nm obtained for all tested samples is the smallest reported for waveguides in LiNbO3. The effect of the Bragg waveguide loss factor on the transmittance and reflectance spectra is investigated using a model for contra-directional coupling that includes an attenuation coefficient. The Bragg grating spectral characteristics are exploited to fabricate distributed Bragg feedback modulators (DBFM) and Bragg reflector Fabry-Perot modulators (BFPM). The sharp cut-off in transmission and reflection spectra, which is an inherent characteristic of Bragg grating, was tuned by applying voltage via the linear electrooptic effect, to produce intensity modulation. The Bragg grating based modulators consume less electric power compared to polarization intensity modulators (PIMs). The DBFM demonstrates 1/1.6 times the modulating voltage of a PIM with identical waveguide and electrode structure. The BFPM shows 1/3.3 times the modulating voltage of the PIM. No difference in the frequency response is observed among the three modulators. Comparison of the modulation sensitivity in the linear region indicates that the Bragg grating based modulators provide better sensitivity than that of the PIM with identical waveguide and electrode structure. These results indicate the potential advantage of the Bragg grating based modulators for enhanced modulation efficiency over conventional modulators. Further improvements can be expected from the optimization of the electrode design.

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Ellis, Andrew. "All optical networking beyond 10 Gbits/s OTDM networks based on electro-optic modulators and fibre ring lasers." Thesis, Aston University, 1997. http://publications.aston.ac.uk/7978/.

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This thesis examines options for high capacity all optical networks. Specifically optical time division multiplexed (OTDM) networks based on electro-optic modulators are investigated experimentally, whilst comparisons with alternative approaches are carried out. It is intended that the thesis will form the basis of comparison between optical time division multiplexed networks and the more mature approach of wavelength division multiplexed networks. Following an introduction to optical networking concepts, the required component technologies are discussed. In particular various optical pulse sources are described with the demanding restrictions of optical multiplexing in mind. This is followed by a discussion of the construction of multiplexers and demultiplexers, including favoured techniques for high speed clock recovery. Theoretical treatments of the performance of Mach Zehnder and electroabsorption modulators support the design criteria that are established for the construction of simple optical time division multiplexed systems. Having established appropriate end terminals for an optical network, the thesis examines transmission issues associated with high speed RZ data signals. Propagation of RZ signals over both installed (standard fibre) and newly commissioned fibre routes are considered in turn. In the case of standard fibre systems, the use of dispersion compensation is summarised, and the application of mid span spectral inversion experimentally investigated. For green field sites, soliton like propagation of high speed data signals is demonstrated. In this case the particular restrictions of high speed soliton systems are discussed and experimentally investigated, namely the increasing impact of timing jitter and the downward pressure on repeater spacings due to the constraint of the average soliton model. These issues are each addressed through investigations of active soliton control for OTDM systems and through investigations of novel fibre types respectively. Finally the particularly remarkable networking potential of optical time division multiplexed systems is established, and infinite node cascadability using soliton control is demonstrated. A final comparison of the various technologies for optical multiplexing is presented in the conclusions, where the relative merits of the technologies for optical networking emerges as the key differentiator between technologies.

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Prasad, Saurabh. "Radio over fiber for 3G cellular System." Thesis, Kolhapur Institute of Technology College of Engineering, 2010. http://hdl.handle.net/10919/71529.

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The demand for bandwidth is increasing vigorously. Thus wired network is using fiber optic telephone line instead of coaxial cable. The concept of Fiber to the Home (FTTH) is really coming into picture. Few countries like Japan, Korea etc are leading in this technology. But now the major challenge is how to provide the high speed internet connection wirelessly. Thus the change is to integrate the wireless and optical fiber communication. Wireless Optical Communication

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Gutiérrez, Campo Ana María. "Development of integrated silicon photonics modulation devices for digital and analog applications." Doctoral thesis, Universitat Politècnica de València, 2013. http://hdl.handle.net/10251/33330.

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Silicon photonics is one of the most exciting and fastest growing photonic technologies in recent years. The salient feature of this technology is its compatibility with the mature silicon IC manufacturing based on complementary metal-oxide semiconductor (CMOS) processes widely used in microelectronic industry. Another motivation is the availability of high-quality silicon-on-insulator (SOI) planar waveguide circuits that offer strong optical confinement due to the high index contrast between silicon (n=3.45) and SiO2 (n=1.45). This opens up miniaturization and very large scale integration of photonic devices allowing photonic integrated circuits for a wide range of applications and markets, from optical telecommunications to bio-photonic devices or precise fibre sensors. Optical modulators are key building-blocks for high speed signal transmission and information processing in any photonic interconnection solution. The work developed in this thesis, as part of the objectives of the European project HELIOS in which it is framed, is essentially focused on realizing compact and efficient modulators integrated on silicon chips. The thesis consists of three main chapters as well as the concluding section on the work accomplished. Chapter one is aimed at giving a general description of the benefits of using silicon photonics, showing its challenges and opportunities as well as at giving a deeply overview of all issues related to the electro-optic modulation. Chapter two is devoted to develop silicon modulators with high features for digital applications. Specifically, new optical structures different to the conventional ones are presented with the aim of enhancing the modulation performance or at least several critical parameters in the modulation. Chapter three is dedicated to the analog applications. The concept of microwave photonics is described as well as different researches carried out in the analog scope for application in the field of integrated microwave photonics, all of them using CMOS-compatible electro-optic silicon modulators which validate the potential of silicon photonics as a promising approach for enabling the development of integrated microwave photonics applications. Finally, conclusions on the work realized are provided in Chapter 4. La fotónica de silicio es una de las tecnologías fotónicas que está experimentando un crecimiento más excitante y rápido en los últimos años. La característica más destacada de esta tecnología es su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos ¿complementary metal-oxide semiconductor¿ (CMOS) ampliamente utilizados en la industria microelectrónica. Otra motivación es la disponibilidad de circuitos de guía de ondas planas de silicio sobre aislante (SOI) de alta calidad que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el SiO2 (n = 1,45). Esto abre las puertas a la miniaturización y a la integración a gran escala de dispositivos fotónicos lo que resulta en circuitos fotónicos integrados para una amplia gama de aplicaciones y mercados, desde telecomunicaciones ópticas a dispositivos bio-fotónicos o sensores de fibra precisos. Los moduladores ópticos son elementos básicos fundamentales para la transmisión de señales a alta velocidad y el procesado de información en cualquier solución de interconexión fotónica. El trabajo desarrollado en esta tesis, como parte del los objetivos del proyecto Europeo HELIOS en el que está enmarcada, se centra fundamentalmente en realizar moduladores compactos y eficientes, integrados en chips de silicio. La tesis consiste en 3 capítulos principales así como una sección de conclusiones del trabajo conseguido. El capítulo uno está destinado a dar una descripción general de los beneficios del uso de la fotónica de silicio, mostrando sus retos y oportunidades, así como a dar una visión profunda de todos los aspectos relacionados con la modulación electro-óptica. El capítulo dos está dedicado a desarrollar moduladores de silicio de altas prestaciones para aplicaciones digitales. Específicamente, se presentan nuevas estructuras ópticas diferentes a las convencionales con el objetivo de mejorar el rendimiento de la modulación o al menos algunos parámetros críticos en la modulación. El tercer capítulo se dedica a las aplicaciones analógicas. Se describe el concepto de la fotónica de microondas, así como diferentes investigaciones llevadas a cabo en el ámbito analógico para su aplicación en el campo de la fotónica integrada de microondas, todas ellas usando moduladores electro-ópticos de silicio compatibles con los procesos de fabricación CMOS, lo que valida el potencial de la fotónica de silicio como un prometedor enfoque para permitir el desarrollo de aplicaciones de la fotónica integrada de microondas. Por último, las conclusiones sobre el trabajo realizado se proporcionan en el Capítulo 4. Gutiérrez Campo, AM. (2013). Development of integrated silicon photonics modulation devices for digital and analog applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/33330 TESIS

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Harston, Geofrey Craig. "Swift Electro-Optic Modulator." BYU ScholarsArchive, 2003. https://scholarsarchive.byu.edu/etd/107.

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The Silicon Wafer Integrated Fiber Technology, SWIFT, is a novel platform for the development of photonic devices. SWIFT is comprised of an optical fiber, specifically a D-fiber in this work, embedded into a V-groove etched into a silicon wafer. This provides a method to secure the fiber and allows the use of standard semiconductor industry equipment and techniques in latter processing for device fabrication. The SWIFT platform is used as the basis for the development of a polarimetric in-fiber electro-optic modulator. The modulator is based on the application of a nonlinear optical polymer, NLOP, film into the evanescent field of a D-fiber. In this way electric fields applied to the NLOP can be used to influence the light propagating through the fiber. The two initial processes in fabricating the modulator are accessing the evanescent field of the D-fiber and making a nonlinear optical polymer (NLOP) thin film. To expose the evanescent field the fiber is chemically etched using hydrofluoric acid. During the etching, light transmitted through the fiber is monitored for changes in power and polarization. The measured optical changes are correlated to scanning electron microscope images of the etched fibers to relate the etch depth to the changes in power and polarization. This provides an etching process that is controllable and repeatable. The NLOP films are made from a simple guest-host system based poly(methyl methacrylate) (PMMA) and dispersed red 1 azo dye (DR1), a nonlinear optical dye. The films are poled to align the dye molecules so that the polymer will exhibit nonlinear optical properties. The poled polymers are tested for second harmonic generation, SHG, to insure that they are nonlinearly optically active. Utilizing the SWIFT platform and the monitored etching process, fibers were etched to a desired 0.2 microns from the core on a repeatable basis. A nonlinear optical polymer was synthesized, formed into thin films, and poled. Nonlinear optical activity in the films was verified by SHG testing.

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Bhatambrekar, Nishant. "Realizing a fractional volt half-wave voltage in Mach-Zehnder modulators using a DC biased push-pull method and synthesis and characterization of indole based NLO chromophores for improving electro-optic activity /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/11606.

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DeRose, Christopher Todd. "Electro-Optic Polymers: Materials and Devices." Diss., The University of Arizona, 2009. http://hdl.handle.net/10150/195650.

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Electro-optic (EO) polymers are an attractive alternative to inorganic nonlinear materials. EO polymers with a Pockel's coefficient, r33, greater than 320 pm/V have been recently demonstrated. In addition to their high EO activity, EO polymers have the additional benefit that their dielectric constants at optical and millimeter wave frequencies are closely matched which allow for bandwidths which are limited only by the resistive losses of traveling wave electrodes. The amorphous nature of the host polymer makes heterogeneous integration of the materials on any substrate possible. The devices which will have the most immediate impact based on these recent materials developments are EO waveguide modulators. Performance benchmarks of less than 6 dB insertion loss, sub-volt Vpi and greater than 100 GHz bandwidth have been achieved separately however, the challenge of achieving all of these benchmarks in a single device has not yet been met.The aim of this dissertation is to optimize passive materials to achieve efficient in device poling of EO polymers, optimize the chromophore loading of the active polymers and to optimize waveguide modulators for device performance within a particular system, analog RF photonic links. These optimizations were done by defining figures of merit for the materials and modulators. This research strategy has led to significant improvements in poling efficiency as well as modulators with record low insertion losses which maintain a low half-wave voltage; on the order of 1 - 2 Volts. Using this optimization strategy and state of the art EO polymers, devices which meet or surpass the benchmark performance values in all categories are expected in the near future.

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Smith, Kevin H. "In-fiber Optical Devices Based on D-fiber." BYU ScholarsArchive, 2005. https://scholarsarchive.byu.edu/etd/291.

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This dissertation presents the fabrication and analysis of in-fiber devices based on elliptical core D-shaped optical fiber. Devices created inside optical fibers are attractive for a variety of reasons including low loss, high efficiency, self-alignment, light weight, multiplexibility, and resistance to electromagnetic interference. This work details how D-fiber can be used as a platform for a variety of devices and describes the creation and performance of two of these devices: an in-fiber polymer waveguide and a surface relief fiber Bragg grating. In D-fiber the core is very close to the flat side of the ‘D’ shape. This proximity allows access to the fields in the fiber core by removal of the cladding above the core. The D-fiber we use also has an elliptical core, allowing for the creation of polarimetric devices. This work describes two different etch processes using hydrofluoric acid (HF) to remove the fiber cladding and core. For the creation of devices in the fiber core, the core is partially removed and replaced with another material possessing the required optical properties. For devices which interact with the evanescent field, cladding removal is terminated before acid breaches the core. Etching fibers prepares them for use in the creation of in-fiber devices. Materials are placed into the groove left when the core of a fiber is partially removed to form a hybrid waveguide in which light is guided by both the leftover core and the inserted material. These in-fiber polymer waveguides have insertion loss less than 2 dB and can potentially be the basis for a number of electro-optic devices or sensors. A polarimetric temperature sensor demonstrates the feasibility of the core replacement method. This work also describes the creation of a surface relief fiber Bragg gratings (SR-FBGs) in the cladding above the core of the fiber. Because it is etched into the surface topography of the fiber, a SR-FBG can operate at much higher temperatures than a standard FBG, up to at least 1100 degrees Celsius. The performance of a SR-FBG is demonstrated in temperature sensing at high temperatures, and as a strain sensor.

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Li, L. "Novel optical fibres and their applications." Thesis, University of Southampton, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235196.

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Tucker, John R. "High frequency characterization of the Gsanger LM0202P eletro-optic [i.e. electro-optic] modulator." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1996. http://handle.dtic.mil/100.2/ADA331067.

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Thesis (M.S. in Applied Physics) Naval Postgraduate School, December 1996. Thesis advisor(s): S. Gnanalingam, D.S. Davis and A. Larraza. "December 1996." Includes bibliographical references (p. 43). Also available online.

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Gan, Fuwan. "High-speed silicon electro-optic modulator for electronic photonic integrated circuits." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/40498.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. Includes bibliographical references (p. 173-184). The development of future electronic-photonic integrated circuits (EPIC) based on silicon technology critically depends on the availability of CMOS-compatible high-speed modulators that enable the interaction of electronic and optical signals. This thesis investigates electrically driven Mach-Zehnder modulators based on high-index contrast silicon waveguide technology and electronic carrier injection. Modulators based on four different structures are investigated: the forward-biased PiN diode with and without lifetime reduction, the reverse-biased PIN/PN diode and a metal-oxide-semiconductor (MOS) structure. These devices are compared with each other in terms of achievable performance. A modulator based on the forward-biased PIN diode with lifetime reduction is designed to reach 34GHz bandwidth and a low figure of merit V -. L = 0.6V - cm using a carrier lifetime reduction and a graded doping profile. A bandwidth of 1-2GHz has been demonstrated so far which is considerably smaller than the design bandwidth due to high series resistance. Modulators based on the forward-biased PIN structure without lifetime reduction have a low figure of merit, very low voltage and extremely low power consumption in the low frequency regime. (cont.) The measurements demonstrate a RF power consumption of 100mW for 25% modulation depth and a figure of merit of V, - L = 0.28V - cm at frequencies up to 10GHz. A pre-compensation technique, using a high pass filter which consists of a parallel resistor and capacitor, extends the modulator bandwidth from 100MHz to 5GHz experimentally. Further it is shown that, modulators based on the reverse-biased structure can in principle reach very high speed, up to 40-80GHz in design but it's difficult to reduce V, - L values close to or even below 1V - cm and the necessary drive voltage is higher than the voltage provided by the CMOS technology. For the measured bandwidth of the fabricated devices so far only 1-2GHz has been demonstrated. This discrepancy is caused by the RC delay due to the experimental setup and high contact resistance. Finally, the performance of the modulator based on the metal-on-semiconductor (MOS) structure is analyzed. Furthermore, an electrically driven Mach-Zehnder waveguide modulator based on a high-index contrast silicon split-ridge waveguide (SRW) technology and electronic carrier injection is proposed. (cont.) The excellent optical and carrier confinement possible in high-index contrast waveguide devices, together with the forward biased operation and the good thermal heat sinking due to the silicon slab close to the waveguide, enables high speed modulation with small signal modulation bandwidths beyond 20GHz, a V, times length figure of merit of V, - L = 0.5Vcm and an insertion loss of about 5.3 dB. Finally, all-optical switches based on optical carrier-injection in high index contrast Si/Si02 split-ridge-waveguide (SRW) couplers are proposed. The waveguide devices are suitable for the construction of low-loss optical switch matrices as well as fast optical switching. These devices exhibit robustness against fabrication tolerances, improved heat sinking, good carrier confinement and high uniformity in transmission over the entire C-band of optical communications in contrast to comparable devices based on buried or ridge waveguides. A reasonably low electrical switching power of 1-10mW is predicted for switching frequencies in the 1MHz-1GHz range. Faster switching speed can be achieved by carrier lifetime reduction. by Fuwan Gan. Ph.D.

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Irmscher, Stefan. "Design, Fabrication and Analysis of InP-InGaAsP Traveling-Wave Electro-Absorption Modulators." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3566.

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External modulators will become key components in fiberoptical communica- tion systems operating at 40Gbit/s andhigher bitrates. Semiconductor electro- absorption (EA)modulators are promising candidates because of their high-speed potential, and their process compatibility with thecorresponding semi- conductor laser light sources. Thetraveling-wave (TW) electrode concept for electro-opticmodulators has been used for a long time in order to resolvethe con°ict between high modulation depth and highmodulation bandwidth. Re- cently, it has been adopted for EAmodulators as well.This thesis presents the work carried out on design,fabrication and analysis of traveling-wave EA modulators(TWEAM) based on InP-InGaAsP. The lengths of TWEAM arecomparable to the lengths of their lumped counterparts. Theexperimental data of this work were analyzed in order show thatthe traveling- wave concept results in better performance evenfor short EA modulators. One key issue is the impedancematching. The low intrinsic characteristic modulator impedancehas to be matched with a corresponding load. In this case, theTW con figuration leads to a much higher bandwidth than for alumped EA modulator with the same length and the same connectedload.An InP process was developed allowing the fabrication ofTWEAM with integrated termination resistors. Experimentalmicrowave properties were ob- tained for different TWEAMgeometries. It is reported on long TWEAM that showstate-of-the-art bandwidth. A 450&#956m long TWEAM reached43GHz, and 67GHz (beyond characterization limit) were indicatedfor a 250&#956m device. The experimental results onmicrowave properties were compared to full-wave, and circuitmodel simulations. The analysis reveals an impedance bandwidthtrade- off for the cross sectional electrode configuration.Results of a new high-impedance design in form of asegmented TWEAM are presented. The devices were processedwithin the frame of this work and record bandwidth performanceis reported. At 50&#937 impedance a bandwidth in the90GHz region was indicated.

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Fehrman, Cory Emily Marie. "Fabrication of a Deoxyribonucleic Acid Polymer Ridge Waveguide Electro-Optic Modulator by Nanoimprint Lithography." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1398419640.

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Gan, Haiyong. "Electro-optic Polymer Based Fabry-Perot Interferometer Devices for Optoelectronic Applications." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/195839.

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Fabry-Perot interferometer (FPI) devices are designed based on the electro-optic (EO) activities of nonlinear optical (NLO) polymer materials for tunable optical filters (TOFs) and spatial light modulators (SLMs). The performance of the EO polymer based FPI devices is theoretically modeled with first order approximation on the FPI cavity interface phase dispersion. NLO materials including TCBD coupled hybrid sol-gel, AJL8/amorphous polycarbonate (APC), and AJLS102/APC are incorporated in FPI structures with distributed Bragg reflector mirrors and transparent conducting oxide electrodes for TOFs. High finesse (over 200), low drive voltage (10 dB isolation ratio with 5 V), and fast settling time (about sub-millisecond) are achieved. The physical origin of the large tunabilities is explored and the contributions from EO effect and inverse piezoelectric effect are analyzed. EO polymer SWOHF3ME/APC is employed in FPI devices with simplified structures for SLMs. Modulation beyond megahertz level is achieved with constant modulation ratio from DC frequency to high operation speed. The operation speed can be potentially over gigahertz with improved device and drive circuit design. When the EO polymer based SLM is configured to work at near the resonance band of the NLO material, the spectral tunability is increased due to resonance enhanced EO activity and the SLM performance is significantly improved. The EO polymer based FPI devices can be further optimized and are promising candidates for many optoelectronic applications.

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Adams, Mitchell Robert. "Dual-Axis Acousto-Optic/Electro-Optic Deflectors in Lithium Niobate for Full-Parallax Holographic Video Displays." BYU ScholarsArchive, 2021. https://scholarsarchive.byu.edu/etd/9159.

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A major limitation of acousto-optic (AO) leaky-mode modulator based holographic displays is their inability to present full-parallax. We propose that full-parallax capabilities can be bestowed on these displays by integrating an electro-optic (EO) phased array into the architecture. We validated this concept by rendering computational models and by fabricating and testing a basic two-axis AO/EO deflector prototype in lithium niobate. This was, to our knowledge, the first instantiation of an integrated, hybrid AO/EO deflector. The prototype had a 6° deflection range along the AO-axis, and a 3° deflection range along the EO-axis. A series of models provide us with a clear path forward for optimizing this deflector. They suggest that an AO/EO modulator with an EO deflection range of 24.5° and that requires less than 7.5 V can be fabricated within the limitations of standard photolithography.

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Pasquali, González Elisa Co (Elisa Carolina) 1975. "Wideband optical frequency comb generator using a phase velocity-matched lithium tantalate electro-optic modulator." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47719.

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Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998. Includes bibliographical references (leaves 74-75). A wideband optical frequency comb generator can be built using an electro-optic modulator that is driven at a frequency of several GHz and that is enclosed in an optical cavity. When light is circulated within the optical cavity, multiple passes through the modulator produce a spectrum centered at the carrier frequency with hundreds of sidebands spaced at the modulation frequency, with a comb span limited only by the material dispersion of the modulator. We present the design, construction, and testing of an optical frequency comb generator using lithium tantalate as a modulator substrate. by Elisa C. Pasquali González. M.Eng.

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Davis, Antonio A. "Design and Analysis of a Poled-Polymer Electro-Optic Modulator with a Strip-Loaded Waveguide Structure." University of Dayton / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1292334289.

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Ozdemir, Murat. "Design And Analysis Of An Open Loop Fiber-optic Gyroscope." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614126/index.pdf.

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Sensing rotation has been an essential topic in navigation and many other applications. Gyroscopes based on propagation of light beams over fixed distances have gained interest with the development of the laser. Since the 1970s, with the development of fiber optics these laser based gyroscopes have developed into compact devices, which can fit in the palm of your hand. In this thesis, we describe and analyze the development of a fiber-optic gyroscope. Fiber optic gyroscopes (also called fiber gyro or FOG) have been under development for different types of applications for more than 30 years all around the world. The physical basis of the fiber gyro is the Sagnac effect that was discovered in the early 1900s and is named after its discoverer. In this work, we first explain the principle of operation of the Sagnac effect and we derive the fundamental formulations in order to have an analytical understanding of the theory. Then, we examine the fiber optic gyro configuration component by component, starting with the laser diode pumped broadband light emitting Erbium-doped superfluorescent source. In addition, the principle of phase modulation, electro-optic phase modulators, fiber optic cables and fiber winding techniques, such as quadrupolar winding is explained within the context of development of the FOG. v The FOG that was assembled was based on circulation and sensing of broadband light centered around 1550nm. The fiber coil was 5km long in order to increase sensitivity in the FOG device. Since single-mode fibers were used steps were taken to ensure successful operation even with polarization dependent errors. The constructed system demonstrated a low sensitivity with a large uncertainty while sensing typical rotation rates. Reasons behind the errors and low sensitivity, as well as improvements that can be made are discussed.

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Wang, Shengjia [Verfasser], Alexander W. [Akademischer Betreuer] Koch, Alexander W. [Gutachter] Koch, and Bloise Felix José [Gutachter] Salazar. "Dual Transverse Electro-Optic Modulator in Optical Interferometric Systems / Shengjia Wang ; Gutachter: Alexander W. Koch, Felix José Salazar Bloise ; Betreuer: Alexander W. Koch." München : Universitätsbibliothek der TU München, 2020. http://d-nb.info/1204200262/34.

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Zhuang, Yuling. "Peripheral-coupled-waveguide multiple quantum well electro-absorption modulator for high efficiency, high spurious free dynamic range and high frequency RF fiber-optic link." Diss., Connected to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2005. http://wwwlib.umi.com/cr/ucsd/fullcit?p3181641.

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Thesis (Ph. D.)--University of California, San Diego, 2005. Title from first page of PDF file (viewed March 1, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.

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Zanzi, Andrea. "Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects." Doctoral thesis, Universitat Politècnica de València, 2020. http://hdl.handle.net/10251/149377.

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[EN] Optical technologies are the backbone of modern communication systems providing high-speed access to the Internet, efficient inter and intra-data center interconnects and are expending towards growing research fields and new markets such as satel- lite communications, LIDARs (Laser Imaging Detection and Ranging) applications, Neuromorphic computing, and programable photonic circuits, to name a few. Be- cause of its maturity and low-cost, silicon photonics is being leveraged to allow these new technologies to reach their full potential.As a result, there is a strong need for innovative, high-speed and energy-efficient photonic integrated building blocks on the silicon platform to increase the readiness of silicon photonic integrated circuits. The work developed and presented in this thesis is focused on the design and char- acterization of advanced passive and active devices, for photonic integrated circuits. The thesis consists of three main chapters as well as a motivation and concluding sections exposing the rationale and the accomplishments of this work. Chapter one describes the design and characterization of an electro-optical Mach-Zehnder mod- ulator embedded in highly efficient vertical pn junction exploiting the free-carrier dispersion effect in the O-band.. Chapter two is devoted to the design and charac- terization of a novel geometry of asymmetrical multimode interference device and its implementation in a Mach-Zehnder modulator. Chapter three is dedicated to the design and characterization of innovative 1-dimensional photonic crystal designs for slow- lightmodulation applications. An extensive analysis of the main trade-off arising from the use of slow light is presented. [ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma. [CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum. I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place. Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377 TESIS

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Hu, Xuan. "Etude et caractérisation de composants d’optique intégrée exploitant les propriétés électro-optiques d’oxydes fonctionnels épitaxiés." Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0083/document.

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Ce travail de thèse porte sur la réalisation d’un nouveau modulateur électro-optique pouvant s’intégrer sur un substrat SOI. Le modulateur proposé utilise une structure dite à fente ou SLOT formée verticalement par la couche superficielle de silicium du matériau SOI sur laquelle on dépose la couche de BTO puis une couche de silicium amorphe. Le confinement latéral dans ce guide de lumière est réalisé par gravure de la couche de silicium amorphe supérieure. La géométrie du ruban de silicium amorphe est optimisée pour obtenir un mode SLOT en polarisation TM (Transverse Magnétique) pour lequel la quasi-totalité de l’énergie lumineuse est confinée dans la couche active de BTO, ce qui permet d’augmenter l’efficacité du modulateur par rapport à une structure conventionnelle. La conception d’un tel modulateur a nécessité l’élaboration d’un outil numérique multi-physique lors de ce travail de thèse afin de prendre en compte rigoureusement les propriétés d’anisotropie des matériaux ferroélectriques, rarement disponibles dans les logiciels de simulation photonique commerciaux. Plus précisément, nous combinons un solveur de mode optique FVFD avec un solveur radiofréquence de Laplace. Il permet des calculs précis de la modulation d'indice de réfraction et de la réponse électro-optique induite par l’effet Pockels des matériaux anisotropes qui présentent une variation non-diagonale du tenseur de permittivité. L’optimisation du modulateur est réalisée, tant du point de vue optique qu’électrique en radiofréquence. Notamment, pour obtenir un modulateur rapide, il est nécessaire de concevoir une électrode qui possède une onde radiofréquence de même constante de propagation que le mode SLOT optique. Le travail de thèse est aussi consacré à la conception des briques de bases d’optique intégrée passive nécessaires à la réalisation des modulateurs: guides droits, diviseurs de faisceaux de type MMI (MultiMode Interference), de virages et de coupleurs directionnels. Un solveur de mode en coordonnées cylindriques a permis de concevoir des virages à très faibles rayons de courbure de 3,6 µm avec des pertes de radiation inférieures à 0.1 dB/90°. Étonnamment, pour des guides en arête, la réduction du rayon de courbure d’un virage n’implique pas forcément une augmentation des pertes de radiation et conduit à une amélioration des performances du dispositif. Ce résultat est très important parce que le virage est la brique de base qui est la plus difficile à miniaturiser en optique intégrée. Actuellement, les rayons de courbures sont limités à 15 µm dans les technologies utilisant les guides en arête. Ce résultat validé expérimentalement, montre qu’il est possible d’obtenir une densité d’intégration 4 à 5 fois plus importante sans modification de la technologie de fabrication. Le deuxième résultat innovant pour la photonique sur silicium porte sur l’obtention de diviseurs de faisceaux très compacts et insensibles à la polarisation (2.0 x 3.6 µm²) The aim of this thesis is to explore a new electro-optic modulator which could be integrated on SOI substrate. The ferroelectric material BaTiO3 (BTO) is potentially the most interesting because it has highest linear electro-optic coefficient among perovskite materials, and its monolithic integration on a SOI substrate as a crystalline thin film was demonstrated in INL. The proposed modulator uses a structure SLOT formed vertically through the silicon layer of the SOI on which is deposited the layer of BTO then an amorphous silicon layer. The lateral confinement in the light guiding is formed by etching of the upper amorphous silicon layer. The geometry of the strip-loaded amorphous silicon is optimized to obtain a SLOT TM (Transverse Magnetic) polarization mode in which substantially all of the light energy is confined in the active layer of BTO, thereby increasing the efficiency of modulator with respect to a conventional structure. The design of such a modulator requirs the development of a multi-physics numerical tool to consider carefully anisotropic properties of ferroelectric materials, rarely available in commercial photonics simulation softwares. Specifically, we combine a FVFD optical mode solver with a radiofrequency Laplace solver. It allows precise calculation of the modulation of refractive index and the electro-optical response induced by Pockels effect of anisotropic materials exhibiting non-diagonal change in the permittivity tensor. The optimization of the modulator is carried out, from both aspects optical and electrical in radiofrequency. In particular, to obtain a rapid modulator, it is necessary to design a radiofrequency electrode that has a same wave propagation constant of optical SLOT mode. The thesis is as well devoted to the design of passive building blocks in integrated optics, which are necessary for the implementation of modulators: straight waveguides, beam splitters of type MMI (MultiMode Interference), turns and directional couplers. A cylindrical coordinate’s mode solver realizes the design of turns of very low bending radii of 3.6 microns with radiation losses less than 0.1dB/90°. Surprisingly, for strip-loaded guides, reducing the cornering radius of turns does not necessarily imply an increase in losses of radiation, and so leading to improved device performance. This result is very important because the turns is a basic building block the most difficult to be miniaturized in integrated optics. Currently, the radii of curvature are limited to 15 microns in waveguide technology. The experimental validation shows that it is possible to obtain a 4-5 times larger integration density without changing the manufacturing technology. The second result for innovative silicon photonics is about obtaining very compact and polarization insensitive beam splitters (2.0 x 3.6 μm²)

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Pham, Toan Thang. "Advances in opto-electronic oscillator operation for sensing and component characterization." Thesis, Cachan, Ecole normale supérieure, 2015. http://www.theses.fr/2015DENS0013/document.

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L'oscillateur optoélectronique (OEO) a été introduit pour la première fois en 1996 par S. Yao et L. Maleki, en tant qu'oscillateur microondes à très faible bruit de phase et obtenu par synthèse directe. Les développements de l'OEO concernent les applications en photonique microondes, télécommunications optiques, radar et traitement du signal. Mais l'OEO devrait aussi pouvoir être utilisé dans le domaine des capteurs. Dans cette thèse nous étudiants plusieurs aspects de l'OEO pour son application à la mesure d'indice de réfraction d'un liquide. Compte tenu de sa structure l'OEO dépend fortement des conditions ambiantes d'utilisation. S'il n'est pas bien optimisé ni contrôlé, il ne peut pas fonctionner correctement sur une longue durée. Nous avons étudié les influences de la température sur le modulateur électrooptique (EOM) et sur le comportement global de l'OEO. Un contrôle de température réduit de façon significative le phénomène de dérive de l'EOM. Afin de la supprimer complètement, nous avons mis au point une instrumentation construite autour d'une carte DSP, permettant de détecter et compenser la dérive du point de fonctionnement optique de l'EOM tout en contrôlant simultanément sa température. Une première technique est basée sur un signal de test, basse fréquence, appliqué à l'électrode DC du modulateur. Une deuxième solution consiste à travailler sur la puissance optique en sortie du modulateur. En combinant les deux on peut profiter des avantages de ces deux méthodes. Utilisant ainsi l'OEO nous avons testé plusieurs configurations pour mesurer l'indice de réfraction de quatre solutions chimiques bien connues, nous avons obtenu une variance de 3 pour mille. Les résultats sont en assez bon accord avec les publications correspondantes. Enfin nous avons aussi introduit une nouvelle méthode pour améliorer les mesures d'indice de réfraction faites à long terme en suivant, grâce à un analyseur vectoriel de réseau, les évolutions au cours du temps du temps de propagation dans la fibre optique. En introduisant à partir de cette mesure une correction aux mesures de la fréquence d'oscillation il est possible de réduire les fluctuations de cette fréquence à seulement 606 Hz, sur une durée de 62 h, ce que l'on peut comparer aux 8 GHz de l'oscillateur. Ainsi le rapport signal à bruit, peut être grandement amélioré lors de la mesure d'indice de réfraction et il doit être possible de diminuer la limite de détection des variations de l'indice de réfraction au cours du temps The optoelectronic oscillator (OEO) was first introduced in 1996 by S. Yao and L. Maleki as a very low phase noise microwave oscillator working in direct synthesis. The OEO developments concern applications in microwave photonics, optical telecommunication, radar and high speed signal processing systems but it should also be used in the sensing domain. In this thesis, we study several aspects to apply the OEO to liquid refractive index measurement. Because of its structure the OEO is very dependent on the ambient conditions. If the OEO is not optimized and controlled, it cannot operate well for long duration. We have analyzed the influences of temperature on the electrooptic modulator (EOM) and the global OEO behavior. Temperature control can significantly reduce the drift phenomena of the EOM. In order to totally remove this drift, we have developed a complete digital system, based on a DSP kit, to detect and compensate automatically the EOM optical bias point drift and to control simultaneously its temperature. The first technique is based on a dither signal at low frequency, injected to DC electrode of the EOM. The second one is based on the average optical output power of the EOM. A combination of these two techniques can take advantages from both of them. Using like that the OEO, we have tested several configurations to measure the refractive index of four classical chemical solutions leading to a standard deviation of 3 per thousand. The results are in rather good agreement with previous publications. Finally, we have introduced a new method to improve the long-term refractive index measurement by monitoring, with a vector network analyzer, the variations of the optical delay in the fiber loop of the OEO. Introducing by this way a correction to the long-term frequency measurement it is possible to reduce the oscillation frequency fluctuations to only 606 Hz, compared to the 8 GHz of the oscillator, for a duration of 62 hours. Therefore the signal-to-noise ratio in the refractive index measurement can be enhanced and so the detection resolution of the refractive index variations during time

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Guyot, Clement. "Etude, fabrication et caractérisation de cristaux photoniques à hauts facteurs de forme en niobate de lithium pour la réalisation de modulateurs électro-optiques ultra-compacts." Thesis, Besançon, 2015. http://www.theses.fr/2015BESA2008/document.

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Cette thèse de doctorat a pour but de fabriquer des systèmes électro-optiques compacts en utilisant les propriétés des cristaux photoniques (CP).). Le niobate de lithium (LiNbO3) est très attractif pour les applications optiques (télécommunications optiques, biomédical, astrophysique) car il a de faibles pertes en propagation (0.1 dB/cm ou moins), une faible dispersion en longueur d’onde, une large bande de transparence (350-5000 nm), et des forts coefficients Electro-optiques, non-linéaires et acousto-optiques. Cependant, les composants optiques utilisant ce matériau présentent classiquement un encombrement supérieur au centimètre, ce qui est dommageable pour leur intégration dans des circuits optiques compacts. Nous cherchons à démontrer plus précisément la faisabilité de modulateurs électro-optiques ultra-compacts tout en gardant les performances des modulateurs de type Mach-Zehnder, telles que de faibles pertes d'insertion, une faible tension de commande et un fort taux d'extinction. Nous proposons de remplir ces objectifs par l'usinage de cristaux photoniques à haut facteur de forme sur des guides LiNbO3, en associant découpe à la scie circulaire de précision et gravure par faisceau d'ion focalisé. La configuration s’appuie d’une part sur une tranche fine (ridge) de LiNbO3 qui confine la lumière transversalement, et d’autre part sur l'usinage du CP à haut facteur de forme pour favoriser une forte sensibilité à la présence de champs électriques externes sur des longueurs actives de l'ordre du micromètre. Les hauts facteurs de forme seront obtenus en usinant les ridges sur leur sommet et sur leurs flancs. Un premier enjeu, technologique, est destiné à optimiser les technologies développées à l’institut FEMTO-ST en vue d’applications à l’optique intégrée. Le deuxième enjeu, scientifique, s’agit de mettre en oeuvre une nouvelle configuration de contrôle de la lumière à l’aide d’un cristal photonique, présentant un double usinage sur les flancs et le sommet. C'est la première démonstration expérimentale de nanostructures LiNbO3 à haut facteur de forme The main goal of this PhD thesis is to fabricate compact electro-optical devices in exploiting the properties of photoniccrystal (PhC). Lithium niobate (LiNbO3) is a very attractive material for optical applications (such as opticaltelecommunication, biomedicine, astrophysics) thanks to its low propagation losses (0.1 dB/cm or less), its weakwavelength dispersion, its large optical bandwidth (350-5000 nm), and its strong electro-optical, non linear and acoustoopticalcoefficients. However, classical LiNbO3-based optical components possess active lengths of several centimers,which is not benefic for their good integration in compact optical circuits.We will focus this study more precisely on the feasibility of ultra-compact electro-optical modulators while keeping theperformances of commercialized LiNbO3 Mach-Zehnder type modulators, like their low insertion losses, their high extinctionratios, and their low power consumptions. To overcome this challenge, we will structure high aspect ratio photonic crystalson lithium niobate waveguides by combining optical grade dicing and focused ion beam milling. The main configuration isbased on the technology of LiNbO3 ridge waveguide in order to confine the light laterally and on the nano-structuration ofhigh aspect ratio photonic crystal on the ridge waveguide to enhance the sensibility to electric field stimuli on a fewmicrometers only. Structuring such high aspect ratio PhC will be possible thanks to focused ion beam milling from thetopside and the lateral side of the waveguide.The first issue is to optimize the technology developed in FEMTO-ST Institute for the fabrication of LiNbO3 integratedcomponents. The second issue is to create new configurations to control the propagation of light. This will be the firstexperimental demonstration of high aspect ratio LiNbO3 nanostructures

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Mhaouech, Imed. "Étude du transport de charges dans le niobate de lithium massif et réalisation de fonctions électro-optiques dans le niobate de lithium périodiquement polarisé." Thesis, Université de Lorraine, 2017. http://www.theses.fr/2017LORR0032/document.

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Le premier volet de cette thèse est consacré à la modélisation des phénomènes de transport dans le LN. Partant d'une analyse critique des modèles de bande usuels, nous montrons leur inadéquation dans le cas du LN et nous proposons un modèle de saut basé sur la théorie des petits polarons. Nous étudions d'abord par simulation Monte-Carlo la décroissance d'une population de polarons liés NbLi4+ relaxant vers des pièges profonds FeLi3+. Nous montrons que les pièges FeLi3+ ont des rayons effectifs particulièrement grands, rayons qui augmentent encore à température décroissante, et limitent considérablement les longueurs de diffusion des polarons. Les résultats de simulations sont ensuite confrontés aux résultats expérimentaux obtenus par différentes techniques ; Absorption photo-induite, Raman, Enregistrement holographique et Pompe-sonde. Le deuxième volet de cette thèse est consacré aux applications électro-optiques dans le LN périodiquement polarisé (PPLN). Sous l’effet d’une tension électrique, l’indice de réfraction du PPLN est périodiquement diminué et augmenté, formant ainsi un réseau d’indice activable électriquement. Un premier composant utilisant l’effet électro-optique dans du PPLN a été développé et démontré expérimentalement. Dans ce composant, la lumière est défléchie sous l’effet de la tension électrique par le réseau d’indice. Ce déflecteur de Bragg atteint une efficacité de diffraction proche de 100% avec une faible tension de commande de l’ordre de 5 V. Un deuxième composant a également été proposé, où la lumière se propage perpendiculairement aux parois de domaines du PPLN. Dans cette configuration un réflecteur de Bragg électro-optique peut être réalisé The first part of this thesis is devoted to the modeling of transport phenomena in the LN. From a critical analysis of the usual band models, we show their inadequacy in the case of LN and we propose a hopping model based on the theory of small polarons. We first study by Monte-Carlo simulation the population decay of bound polarons NbLi4+ in deep traps FeLi3+. We show that the traps (FeLi3+) have particularly large effective radii, which increase further at decreasing temperature, and considerably limit the diffusion lengths of the polarons. The results of simulations are then compared with experimental results obtained by different techniques; Light-induced absorption, Raman, Holographic storage and Pump-Probe. The second part of this thesis is devoted to electro-optical applications in the periodically poled LN (PPLN). Under the effect of an electrical voltage, the refractive index of the PPLN is periodically decreased and increased, thus forming an electrically activatable index grating. A first component using the electro-optical effect in PPLN has been developed and demonstrated experimentally. In this component, the light is deflected under the effect of the electrical voltage by the index grating. This Bragg deflector achieves a diffraction efficiency of close to 100% with a low drive voltage of the order of 5 V. A second component has also been proposed, where light propagates perpendicularly to the domain walls of the PPLN. In this configuration an electro-optic Bragg reflector can be realized

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Sato, Sandra Sayuri. "Simulação multifísica utilizando método dos elementos finitos auxiliando interativamente a fabricação de moduladores eletro-ópticos em substratos de Bi4Ge3O12." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/3/3143/tde-21072016-091619/.

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Este trabalho apresenta um método desenvolvido pela autora para, através de simulações multifísicas pelo Método dos Elementos Finitos (MEF), servir como ferramenta de apoio ao projeto e fabricação de guias de onda e moduladores eletro-ópticos em óptica integrada, além de possibilitar a análise da performance de moduladores eletro-ópticos. A técnica adotada para a fabricação dos guias de onda ópticos foi a de tensão mecânica. Os parâmetros de geometria (espessura do filme e larguras das trincheiras) e de temperatura de deposição do filme são definidos nas simulações e utilizados no processo de fabricação de guias de ondas em óptica integrada, que servem de base para a fabricação de moduladores eletro-ópticos em substrato cristalino de retículo cúbico. As trincheiras dos guias de onda do tipo canal são construídas em Germanato de Bismuto (BGO - Bi4Ge3O12), a partir da deposição sobre o substrato de um filme fino indutor de tensão mecânica (stress) Nitreto de Silício (Si3N4) e definidas pelos processos de litografia óptica e corrosão seletiva por plasma. Os moduladores são obtidos através da deposição dos eletrodos de alumínio sobre o filme, seguida de Si3N4 dos processos de litografia óptica e corrosão, obtendo-se eletrodos. O processo iterativo proposto inicia-se com os resultados das simulações, em que são definidos os parâmetros de fabricação do filme, da trincheira e dos eletrodos. Após a fabricação desses elementos, o componente é caracterizado e são medidos os parâmetros reais filme e do substrato. Esses valores são realimentados nas simulações para refinar o projeto do componente. O trabalho, além de apresentar todos os passos do processo interativo de simulações, projeto, fabricação e caracterização do componente desejado, indica as dificuldades encontradas na implementação do processo e as atividades futuras a serem desenvolvidas para o aperfeiçoamento do mesmo. This work presents a method developed by the author to support the project and fabrication of integrated optic waveguides and electro-optic modulators by means of Finite Element Method (FEM) multiphysics simulations, also enabling the electro-optic modulators performance analysis. The technique used for fabricating the optical waveguides was the thermally induced residual stress (ISS). The geometry parameters (film thicknesses and trenches widths) and the film deposition temperature are obtained in the simulations and subsequently used in the integrated optical waveguides fabrication process, which serve as a basic building block for the electrooptic modulators on crystalline cubic lattice substrate. The channel waveguide trenches are built on Bismuth Germanate (BGO Bi4Ge3O12) by depositing a Silicon Nitride (Si3N4) Stress-inducing thin film, being later defined by optical lithography and plasma etching process. Modulators are obtained depositing aluminum on the Si3N4 film followed by the optical lithography and corrosion process, defining electrodes. The proposed iterative process starts with the simulation results that define the fabrication parameters of the film, trench and electrodes. After the fabrication of these elements, the device is characterized and the actual parameters of the film and substrate are measured. These values are fed back into the simulations to refine the component design. The work besides presenting all the simulation-design-fabrication-characterization iterative process for obtaining the devised device also highlights the difficulties encountered in the implementation process along with suggestions of future activities aiming at improving it.

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Pertile, Heidi Kaori Sato. "Laser à fibra dopada com érbio em regime de acoplamento híbrido de modos com absorção saturável baseada em nanotubos de carbono." Universidade Presbiteriana Mackenzie, 2013. http://tede.mackenzie.br/jspui/handle/tede/1430.

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Made available in DSpace on 2016-03-15T19:37:45Z (GMT). No. of bitstreams: 1 Heidi Kaori Sato Pertile.pdf: 2322047 bytes, checksum: aaee9a054b94e9557394faaf3251bec9 (MD5) Previous issue date: 2013-01-24 In this work we present a study on the generation of pulse train in an Erbium doped fiber laser in the hybrid mode-locking regime operating with short pulses at high repetition rates. The short pulses are generated by passive mode-locking technique using carbon nanotubes as saturable absorbers. High repetition rates are generated by active mode-locking technique using a phase modulator. We built cavities with three different mode-locking regimes: active, passive and, finally, hybrid, to compare results. In active and hybrid cavities we used an electro-optical modulator. In passive and hybrid cavities we used a homemade film of a polymer containing carbon nanotubes with diameter of 1 nm. With the cavity operating in the hybrid regime we obtained pulse durations of 1.77 ps with repetition rate of 10 GHz. Neste trabalho apresentamos um estudo sobre a geração de trem de pulsos em laser à fibra dopada com Érbio operando em regime de acoplamento híbrido de modos, com pulsos curtos a altas taxas de repetição. Os pulsos curtos são obtidos pela técnica de acoplamento passivo de modos utilizando absorvedores saturáveis de carbono. As altas taxas de repetição são obtidas pela técnica de acoplamento ativo de modos através de um modulador. Construímos três cavidades distintas: ativa, passiva e finalmente a híbrida para comparação de resultados. Nas cavidades ativa e híbrida foi utilizado um modulador eletro-óptico de fase e, nas cavidades passiva e híbrida foi utilizado um filme de um polímero (NOA 73TM) contendo nanotubos de carbono com diâmetro de 1 nm por nós fabricado. Com a cavidade em regime híbrido de modos, foi obtida uma duração de pulso de 1,77 ps com uma taxa de repetição de 10 GHz.

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Leroy, Floriane. "Etude des propriétés électro-optiques des couches minces de Ba1-xSrxTiO3 pour la modulation optique." Phd thesis, Université de Valenciennes et du Hainaut-Cambresis, 2012. http://tel.archives-ouvertes.fr/tel-00749716.

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Le développement de nouveaux matériaux est essentiel dans la réalisation de capteurs de petites dimensions et pour les composants micro-nano-optoélectroniques. Les matériaux à base d'oxydes en sont de bons candidats. Ce travail de thèse a concerné la synthèse de matériaux ferroélectriques tels le BaTiO3 (BTO) et le Ba1-xSrxTiO3 (BST), associés à des électrodes inférieures et supérieures en oxyde d'indium-d'étain (ITO), tous déposés par pulvérisation cathodique RF (radio fréquence). Nous nous sommes concentrés sur la relation existante entre les propriétés optiques et électro-optiques de guide d'ondes et l'orientation cristalline, la couche d'interface ainsi que la nature du substrat. Après la caractérisation des propriétés structurales, nous avons évalué les propriétés optiques de ces matériaux par la technique du couplage par prisme pour une gamme de longueurs d'ondes de l'UV au proche IR. Les résultats ont montré un bon confinement de la lumière dans le film, avec des pertes planaires de propagation optique de l'ordre de 3 dB/cm aux longueurs d'onde télécoms, résultats à l'état de l'art pour ces matériaux.Cette méthode de couplage optique a permis de mettre en évidence les propriétés électro-optiques du BTO et du BST dans cette même gamme de longueurs d'onde et pour les deux polarisations optiques, à partir de la variation des spectres de réflectivité. Si le BTO a montré un coefficient r33 de 23 pm/V aux longueurs d'onde télécoms, nous avons mesuré autour de 19 pm/V pour le BST(70/30).

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Stolz, Arnaud. "Conception, fabrication et caractérisation d'un modulateur optique à commande plasmonique sur nitrure de gallium à une longueur d'onde de 1,55 micron." Phd thesis, Université de Valenciennes et du Hainaut-Cambresis, 2011. http://tel.archives-ouvertes.fr/tel-00677475.

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Les futurs modulateurs optiques doivent satisfaire à des exigences auxquelles les modulateurs électro-optiques actuels ne peuvent plus répondre (tension de commande et dimensionnement faible, fonctionnement dans la gamme 0-40GHz à faibles pertes). Il devient alors nécessaire d'envisager de nouveaux moyens de réaliser une modulation rapide à faible consommation. Ce travail s'inscrit au sein d'un projet amont de la DGA, afin d'évaluer le gain potentiel de la plasmonique sur semiconducteurs pour la modulation optique. Nous avons d'abord sélectionné des couches de GaN sur saphir avec d'excellentes propriétés optiques et des pertes de propagation de l'ordre de 0,6dB/cm. Ensuite, nous avons montré la génération d'une résonance plasmonique à l'interface Au/GaN. Un travail d'optimisation a été réalisé en vue de rendre sa modulation efficace par variation de l'indice du GaN. Plusieurs dispositifs de démonstration ont été fabriqués en salle blanche puis caractérisés. Si les résultats optiques obtenus ont montré un effet de variation d'indice nouveau jusqu'à Δn=10-2 pour plusieurs dizaines de volt, les pertes RF de propagation se sont révélées élevées, proches de 16dB/cm à 20GHz. En parallèle, une structure à effet d'électro-absorption utilisant un multipuits quantique sur InP a été conçue et caractérisée par couplage par prisme et a montré des variations d'indice de l'ordre de 2×10-3 à 2,5V. Ces travaux de thèse, précurseurs dans ce domaine au sein du laboratoire, vont permettre d'orienter les recherches futures vers de nouveaux matériaux pour l'optoélectronique, mais aussi de mettre en exergue les points durs de la plasmonique pour la modulation optique sur semiconducteurs.

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Sheehy, Finbar T. "Antenna-coupled mm-wave electro-optic modulators and linearized electro-optic modulators." Thesis, 1993. https://thesis.library.caltech.edu/4231/1/Sheehy_ft_1993.pdf.

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NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. We have demonstrated antenna-coupled electro-optic modulators at frequencies up to 98 GHz. The antenna-coupled design allows the modulator to overcome the velocity-mismatch problem which limits the maximum operating frequency of more conventional designs. Several modulators have been demonstrated, including a prototype narrowband phase modulator (optical wavelength 0.633 [...]) at 10 GHz, a narrowband phase modulator (0.633 [...]) at 60 GHz, a broadband Mach-Zehnder modulator operated as a phase modulator at 60 GHz, and a broadband Mach-Zehnder amplitude modulator at 94 GHz (optical wavelength 1.3 [...]). The performance of the prototype modulator at 10 GHz is not quite as good as that of conventional modulators at this frequency, but is comparable. The performance of the mm-wave modulators cannot be directly compared to conventional modulators, as none exist at these frequencies. However, we have established that the relative performance of the mm-wave modulators is consistent with a simple scaling law. Linearized [...] modulators have been demonstrated recently by other workers. These linearized modulators consist of conventional [...] coupler-modulators cascaded with additional couplers. We have considered the general case of cascade-linearized [...] modulators, and have shown that it is possible to provide up to four degrees of freedom which can be used to modify the modulator transfer function. We have shown that these degrees of freedom can be identified and separated for design purposes, and have shown how to implement a given design.

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譚漢民. "A Study of Polarization Insensitive Electro-Optic Modulators." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/23893322296214924870.

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Chang, Shih-Jung, and 張世軍. "A study of improved lithium niobate electro-optic modulators." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/25776497440773242430.

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Dissertations / Theses on the topic 'Electro-optic modulators'

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