Relevant bibliographies by topics / Field Dependence of Carrier Mobility

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Field Dependence of Carrier Mobility'

Author: Grafiati
Published: 7 June 2025
Last updated: 2 August 2025

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Journal articles on the topic "Field Dependence of Carrier Mobility"

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Tripathi, Durgesh C., K. Sudheendra Rao, Sunil Kumar, and Y. N. Mohapatra. "Impact of device structure on field dependence of carrier mobility." Synthetic Metals 278 (August 2021): 116835. http://dx.doi.org/10.1016/j.synthmet.2021.116835.

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Popov, V. P., and M. A. Ilnitsky. "Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs." Advanced Materials Research 276 (July 2011): 59–65. http://dx.doi.org/10.4028/www.scientific.net/amr.276.59.

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Mobility degradation during gate length scaling is a well established experimental fact, which is confirmed also by Monte –Carlo simulation. We have analyzed the physical reason for this degradation using experimental and modeling data obtained in classic drift-diffusional approximation with electric field dependences of electron mobility. We have shown that this dependence is a main reason for mobility degradation in nanoscale FETs, which means also that the same reason will limit the drain current in future post-silicon CMOS generation with new materials like narrow band III/V compounds or g
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Hürner, Andreas, C. Bonse, G. Clemmer, et al. "Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC." Materials Science Forum 778-780 (February 2014): 487–90. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.487.

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In this study, we present results on electrical characterization of bipolar pn-diodes to investigate the temperature and electrical field dependent behavior of ambipolar mobility in n-doped 4H-SiC. Therefore, static current-voltage measurements to calculate the specific differential resistance and dynamical reverse recovery measurements to determine the mean carrier concentration were carried out for different temperatures and forward current densities. The specific differential resistance of the drift layer decreased from 10 mΩcm2 at 80 Acm-2 to 6.6 mΩcm2 at 180 Acm-2, whereas the mean carrie
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Raibaruah, Apurba Kumar, and Kaushik Chandra Deva Sarma. "Carrier Mobility Analysis of Parallel Gated Junctionless Field Effect Transistor." Journal of Nanoelectronics and Optoelectronics 17, no. 1 (2022): 1–12. http://dx.doi.org/10.1166/jno.2022.3163.

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The paper reports analysis of carrier mobility in a Parallel Gated Junctionless Field Effect Transistor. Fully analytical mathematical models for electron and hole mobilities are developed. The mobility models are developed using empirical relation between mobility and transverse and longitudinal electric field. The Quantum confinement effect has also been considered in the models. In the model electric field dependence on classical and quantum mechanical effects are formulated separately. The total electric field is the summation of the two. The models are compared with Technology Computer-Ai
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Shukri, Seyfan Kelil, and Lemi Demeyu Deja. "Charge Carriers Density, Temperature, and Electric Field Dependence of the Charge Carrier Mobility in Disordered Organic Semiconductors in Low Density Region." Condensed Matter 6, no. 4 (2021): 38. http://dx.doi.org/10.3390/condmat6040038.

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We investigate the transport properties of charge carriers in disordered organic semiconductors using a model that relates a mobility with charge carriers (not with small polarons) hopping by thermal activation. Considering Miller and Abrahams expression for a hopping rate of a charge carrier between localized states of a Gaussian distributed energies, we employ Monte Carlo simulation methods, and calculate the average mobility of finite charge carriers focusing on a lower density region where the mobility was shown experimentally to be independent of the density. There are Monte Carlo simulat
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Milosevic, Milan, and Rifat Ramovic. "Analytical model of carrier mobility in a Polymer Field Effect Transistor." Chemical Industry 61, no. 2 (2007): 55–59. http://dx.doi.org/10.2298/hemind0702055m.

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In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor) channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphical
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Reggiani, Susanna, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, and Giorgio Baccarani. "An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices." VLSI Design 10, no. 4 (2000): 467–83. http://dx.doi.org/10.1155/2000/52147.

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A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to CAD and suitable for implementation in device simulators. The effects of the electric field, temperature, and doping concentration are accounted for. In particular, the model unifies the descriptions of majority- and minority-carrier mobility and includes the full temperature dependence. The effects of a high longitudinal field are included in the conventional velocity-saturation form; the doping dependence is also incorporated in the latter. The model has been worked out starting from a prelimin
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Šašić, Rajko M., and P. M. Lukić. "Conduction Mechanism Based Model of Organic Field Effect Transistor Structure." Materials Science Forum 555 (September 2007): 125–30. http://dx.doi.org/10.4028/www.scientific.net/msf.555.125.

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Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.
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Nowak, Marian, Marcin Jesionek, Barbara Solecka, Piotr Szperlich, Piotr Duka, and Anna Starczewska. "Contactless photomagnetoelectric investigations of 2D semiconductors." Beilstein Journal of Nanotechnology 9 (October 25, 2018): 2741–49. http://dx.doi.org/10.3762/bjnano.9.256.

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Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependence
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Abdinov, A. Sh, R. F. Babaeva, and R. M. Rzayev. "Dependence of carrier mobility on an electric field in gallium selenide crystals." Semiconductors 46, no. 6 (2012): 730–35. http://dx.doi.org/10.1134/s1063782612060024.

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Dissertations / Theses on the topic "Field Dependence of Carrier Mobility"

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Ansaripour, Ghassem. "Hot carriers and high field effects in SiGe heterostructures." Thesis, University of Warwick, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343250.

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McGarry, Stephen. "Irradiated silicon particle detectors." Thesis, Lancaster University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369468.

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Khym, Sungwon. "Magnetotransport studies of semimetallic InAs/GaSb structures." Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325145.

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Ravi, Sankar Ashwin. "Molecular weight effects of PBT-6 polymeric semiconductor on charge carrier mobility." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50414.

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Organic π-conjugated Donor-Acceptor copolymers are emerging as potential candidate materials for organic field effect transistor (OFET) and organic photovoltaic (OPV) applications. The electron-deficient benzothiadiazole group coupled with an electron-rich oligothiophene to form donor-acceptor copolymers has attracted significant attention. These low optical band gap materials absorb photons in the range of 400-800 nm and exhibit good thermal stability. In particular, poly(benzothiadiazole-sexithiophene) (PBT6) exhibits excellent performance in optoelectronic devices and high thermal stability
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Bourgeois, Raymond C. "Phonotactic orientation behavior of tethered flying crickets (Teleogryllus oceanicus) and its dependence on stimulus carrier frequency." Thesis, McGill University, 1985. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=63311.

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Kern, Julia [Verfasser], and Vladimir [Gutachter] Dyakonov. "Field Dependence of Charge Carrier Generation in Organic Bulk Heterojunction Solar Cells / Julia Kern. Gutachter: Vladimir Dyakonov." Würzburg : Universität Würzburg, 2013. http://d-nb.info/1108780598/34.

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Atarah, Samuel. "Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics." Thesis, De Montfort University, 2006. http://hdl.handle.net/2086/13204.

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Scaling of electronic devices is driven, from the consumption side, by the need for compact electrical products, increase in device speed and from the production side, by lowering of production cost. However, aggressive scaling gives rise, among others, to high gate tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high dielectric constants (high-κ) are being studied as candidates for integration into transistors
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Klüpfel, Fabian J., Wenckstern Holger von, and Marius Grundmann. "Low frequency noise of ZnO based metal-semiconductor field-effect transistors." American Institute of Physics, 2015. https://ul.qucosa.de/id/qucosa%3A31224.

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The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order to distinguish between noise generation in the bulk channel material, at the semiconductor surface, and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail, especially concerning the dependency of the noise on geometrical variations. The experiments suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the bulk channel material, bo
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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co
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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co
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Books on the topic "Field Dependence of Carrier Mobility"

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Elliott, Willliam, and Melinda Lewis. Making Education Work for the Poor. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190621568.001.0001.

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Making Education Work for the Poor identifies wealth inequality as the gravest threat to the endangered American Dream. Though studies have clearly illustrated that education is the primary path to upward mobility, today, educational outcomes are more directly determined by wealth than innate ability and exerted effort. This accounting directly contradicts Americans' understanding of the promise the American Dream is supposed to offer: a level playing field and a path towards a more profitable future. In this book, the authors share their own stories of their journeys through the unequal U.S.
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Book chapters on the topic "Field Dependence of Carrier Mobility"

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Jadhav, P. J., B. N. Limketkai, and M. A. Baldo. "Effective Temperature Models for the Electric Field Dependence of Charge Carrier Mobility in Tris(8-hydroxyquinoline) Aluminum." In Organic Electronics. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/12_2009_5.

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Andreou, Andreas G. "In-Situ Characterization of Carrier Mobility in Field Effect Transistors." In Review of Progress in Quantitative Nondestructive Evaluation. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0817-1_156.

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Fujii, K., T. Tomaru, T. Ohyama, and E. Otsuka. "Magnetic Field Dependence of Carrier and Exciton Diffusion in Photoexcited Ge." In High Magnetic Fields in Semiconductor Physics II. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_86.

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Tanase, C., P. W. M. Blom, D. M. de Leeuw, and E. J. Meijer. "Charge Carrier Density Dependence of the Hole Mobility in Poly(p-phenylene vinylene)." In Physics of Organic Semiconductors. Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527606637.ch11.

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Mendil, Nesrine, Mebarka Daoudi, Zakarya Berkai, and Abderrahmane Belghachi. "Temperature Dependence of Carrier Mobility in SubPc and C60 Organic Semiconductors for Photovoltaic Applications." In Renewable Energy in the Service of Mankind Vol II. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18215-5_41.

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Borghesani, A. F., and M. Santini. "Density and Field Dependence of Excess Electron Mobility in High-Density Noble Gases." In Linking the Gaseous and Condensed Phases of Matter. Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2540-0_17.

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Mukhopadhyay, Shyamal, Bratati Mukhopadhyay, Gopa Sen, and P. K. Basu. "Calculation of Intrinsic Carrier Density of Ge1−xSnx Alloy, Its Temperature Dependence Around Room Temperature and Its Effect on Maximum Electron Mobility." In Computers and Devices for Communication. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8366-7_81.

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Pennington, Gary, S. Potbhare, Neil Goldsman, D. B. Habersat, and Aivars J. Lelis. "Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1055.

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Dadhich, Shubham, Arun Dev Dhar Dwivedi, and Ram Babu Pareek. "Numerical Simulation and Physics-Based Modelling of Ph-BTBT-C10-Based Organic Thin Film Transistor." In Organic Electronics - From Fundamentals to Applications [Working Title]. IntechOpen, 2025. https://doi.org/10.5772/intechopen.1009904.

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Organic thin film transistors (OTFTs) are an important aspect in the development of low-cost, large-area, and flexible ICs, underscoring the necessity for precise modelling and understanding of device physics. A finite element method (FEM)-based numerical device simulation of OTFTs is presented in this chapter using Ph-BTBT-C10 as the semiconductor. This model includes field-dependent mobility and a double-peak density of states. This model extends existing theories by integrating temperature-dependent band gap narrowing with the carrier concentration effects caused by heavy doping. It is more
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Asche, M. "Phonon emission and absorption by hot electrons in -doped multiple layers in GaAs." In Hot Electrons in Semiconductors. Oxford University PressOxford, 1997. http://dx.doi.org/10.1093/oso/9780198500582.003.0007.

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Abstract The present chapter deals with hot electrons in -doped GaAs and their interaction with phonons of different types. As described in the preceding chapters current carriers gain energy from an external electric field applied to the semiconductor. In the stationary state the electrons mainly dissipate their energy gain by phonon emission. If the carriers populate several energy levels with different mobilities in field direction e.g. manyvalley semiconductors or sub bands in confined systems the energy gain is not the same in these sublevels since it is proportional to the mobility. This
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Conference papers on the topic "Field Dependence of Carrier Mobility"

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Motohisa, Jun-ichi, Kazuhiko Hirakawa, and Hiroyuki Sakaki. "Significance of Low Field Mobility and Its Carrier Concentration Dependence in Characteristics of High Electron Mobility Transistors." In 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.s-i-14.

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Wilke, B., and H. Gobel. "Investigations on the temperature dependence of the charge carrier mobility of pentacene field-effect transistors." In 2008 IEEE Interdisciplinary Conf on Portable Info Devices (PORTABLE) - Polytronic 2008 IEEE Conf on Polymers and Adhesives in Microelectronics and Photonics. IEEE, 2008. http://dx.doi.org/10.1109/portable-polytronic.2008.4681303.

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Mosser, Vincent, David Seron, and Youcef Haddab. "Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density." In 2015 International Conference on Microelectronic Test Structures (ICMTS). IEEE, 2015. http://dx.doi.org/10.1109/icmts.2015.7106121.

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Haque, Md Mahfuzul, and Md Iqbal Bahar Chowdhury. "Effects of the field-dependence of the carrier mobility on the base transit time of SiGe HBTs having non-uniformly doped base." In 2015 International Conference on Advances in Electrical Engineering (ICAEE). IEEE, 2015. http://dx.doi.org/10.1109/icaee.2015.7506870.

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Badran, R. I. "Estimations of Carrier Mobility and Trapped-Carrier Density of States for Microcrystalline Silicon Semiconductors from Analysis of Field Dependent Steady-State Photocarrier Grating Measurements." In NANOTECHNOLOGY AND ITS APPLICATIONS: First Sharjah International Conference on Nanotechnology and Its Applications. AIP, 2007. http://dx.doi.org/10.1063/1.2776715.

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Alvarez, A. L., B. Romero, B. Arredondo, X. Quintana, R. Mallavia, and J. M. Oton. "A complete model for electrical behaviour of single carrier organic diodes in the presence of a field-dependent mobility." In 2009 Spanish Conference on Electron Devices (CDE). IEEE, 2009. http://dx.doi.org/10.1109/sced.2009.4800462.

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Xiao, Y. G., M. H. Tang, and J. C. Li. "The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films." In 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS). IEEE, 2011. http://dx.doi.org/10.1109/nvmts.2011.6137088.

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Gunawan, O., L. Sekaric, A. Majumdar, et al. "Measurement of Silicon Nanowires Carrier Mobility and Its Size Dependence." In 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800797.

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Terauchi, R., Y. Ohno, T. Adachi, et al. "Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs." In 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.d-5-5.

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Fujisaki, Masataka, Akihiko Fujii, Makoto Yoneya, and Masanori Ozaki. "Temperature Dependence Simulation of Carrier Mobility for Ambipolar Hexyl-substituted Phthalocyanine." In 2020 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/ssdm.2020.g-6-04.

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Reports on the topic "Field Dependence of Carrier Mobility"

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Kline, R. The Dependence of Regioregular Poly(3-Hexylthiophene) Film Morphology and Field-Effect Mobility on Molecular Weight. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/839719.

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FONTECAVE, Marc, Sébastien CANDEL, and Thierry POINSOT. Hydrogen today and tomorrow. Académie des sciences, 2024. http://dx.doi.org/10.62686/8.

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The prospects offered by hydrogen as part of the energy transition and the decarbonization of the energy system are major topical issues. Although sources of natural hydrogen have been identified in various parts of the world, it is not possible to estimate at this time the potential of these sources, nor to assess their exploitation capacities without further exploration. Thus, hydrogen is not a primary energy source but should only be considered as an energy carrier. Most of this hydrogen, produced today from fossil resources mainly for industrial usage (including oil refining and ammonia sy
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