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Dissertations / Theses on the topic 'Field Dependence of Carrier Mobility'

Author: Grafiati

Published: 7 June 2025

Last updated: 2 August 2025

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1

Ansaripour, Ghassem. "Hot carriers and high field effects in SiGe heterostructures." Thesis, University of Warwick, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343250.

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2

McGarry, Stephen. "Irradiated silicon particle detectors." Thesis, Lancaster University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369468.

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3

Khym, Sungwon. "Magnetotransport studies of semimetallic InAs/GaSb structures." Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325145.

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4

Ravi, Sankar Ashwin. "Molecular weight effects of PBT-6 polymeric semiconductor on charge carrier mobility." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50414.

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Organic π-conjugated Donor-Acceptor copolymers are emerging as potential candidate materials for organic field effect transistor (OFET) and organic photovoltaic (OPV) applications. The electron-deficient benzothiadiazole group coupled with an electron-rich oligothiophene to form donor-acceptor copolymers has attracted significant attention. These low optical band gap materials absorb photons in the range of 400-800 nm and exhibit good thermal stability. In particular, poly(benzothiadiazole-sexithiophene) (PBT6) exhibits excellent performance in optoelectronic devices and high thermal stability

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5

Bourgeois, Raymond C. "Phonotactic orientation behavior of tethered flying crickets (Teleogryllus oceanicus) and its dependence on stimulus carrier frequency." Thesis, McGill University, 1985. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=63311.

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6

Kern, Julia [Verfasser], and Vladimir [Gutachter] Dyakonov. "Field Dependence of Charge Carrier Generation in Organic Bulk Heterojunction Solar Cells / Julia Kern. Gutachter: Vladimir Dyakonov." Würzburg : Universität Würzburg, 2013. http://d-nb.info/1108780598/34.

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7

Atarah, Samuel. "Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics." Thesis, De Montfort University, 2006. http://hdl.handle.net/2086/13204.

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Scaling of electronic devices is driven, from the consumption side, by the need for compact electrical products, increase in device speed and from the production side, by lowering of production cost. However, aggressive scaling gives rise, among others, to high gate tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high dielectric constants (high-κ) are being studied as candidates for integration into transistors

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8

Klüpfel, Fabian J., Wenckstern Holger von, and Marius Grundmann. "Low frequency noise of ZnO based metal-semiconductor field-effect transistors." American Institute of Physics, 2015. https://ul.qucosa.de/id/qucosa%3A31224.

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The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order to distinguish between noise generation in the bulk channel material, at the semiconductor surface, and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail, especially concerning the dependency of the noise on geometrical variations. The experiments suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the bulk channel material, bo

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9

Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co

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10

Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co

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11

Eshghi, Hosein. "Electron and hole transport in GaN and InGaN." Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/2237/.

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12

Majerová, Irena. "Příprava a charakterizace dvourozměrných heterostruktur." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2019. http://www.nusl.cz/ntk/nusl-400979.

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After the experimental discovery of graphene at the beginning of the 21st century, many other interesting 2D materials have been discovered. However, the electrical and optical properties of these layers are greatly influenced by the composition and quality of the surrounding materials. In order to preserve the exceptional properties of thin films, attention has gradually been drawn to heterostructures from 2D composite materials. This thesis describes the preparation and characterization of heterostructures composed of graphene and hexagonal boron nitride. In addition, a specific focus will b

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13

Clavel, Milène. "Etude de l'intégration de transistors à canal en graphène épitaxié par une technologie compatible CMOS." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00721765.

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Le graphène est un plan unique d'atomes de carbone formant une structure en nid d'abeilles. Dans le cas idéal, le graphène possède des propriétés physiques étonnantes résultant de sa structure électronique en " cône de Dirac ". En particulier, la mobilité électronique dans le graphène est exceptionnelle ce qui ouvre des perspectives pour les transistors futurs. Dans cette thèse notre objectif est de tester les propriétés et les performances de transistors réalisés sur graphène à l'aide d'une technologie compatible CMOS. Depuis 2004, il est connu qu'on peut obtenir ce matériau bidimensionnel à

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14

Lüttich, Franziska. "Elektrische und morphologische Charakterisierung organischer Feldeffekttransistoren mit aufgedampften, gesprühten sowie aufgeschleuderten organischen Halbleitern." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-158832.

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In dieser Arbeit werden organische Feldeffekttransistoren (OFETs) aus den verschiedenen Materialien Manganphthalocyanin (MnPc), [6,6]Phenyl-C61-butansäuremethylester (PCBM), 6,13-Bis(triisopropylsilyethinyl)pentacen (TIPS-Pentacen) und N,N’- Bis(n-octyl)-1,6-Dicyanoperylen-3,4:9,10-Bis(Dicarboximid) (PDI8-CN2) hergestellt. Dabei finden unterschiedliche Abscheidemethoden wie die Molekularstrahlabscheidung, die Ultraschallsprühbeschichtung und die Drehbeschichtung Anwendung. Die Morphologie sowie die Funktionsweise der Transistoren werden in Abhängigkeit von den Herstellungsparametern und bezügl

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15

Liu, Xiao. "Elaboration and characterization of organic semiconducting thin films for optoelectronics." Electronic Thesis or Diss., Sorbonne université, 2020. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2020SORUS205.pdf.

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Ce travail de thèse a pour but l’élaboration et la caractérisation de film minces semi-conducteurs à partir de différents matériaux p-conjugués (DAL1, BTBT, C8-BTBT-C8, C10-PBT etd iI(T2)2) pour des applications en optoélectronique. L’objectif général a porté sur l’optimisation de leurs méthodes de fabrication, de manière à améliorer les performances des composants électroniques correspondant (transistors à effet de champs et diodes électroluminescentes organiques)<br>This PhD work aims at the elaboration and characterization of organic semiconducting thin films based on different π-conjugated

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16

Widmer, Johannes. "Charge transport and energy levels in organic semiconductors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-154918.

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Organic semiconductors are a new key technology for large-area and flexible thin-film electronics. They are deposited as thin films (sub-nanometer to micrometer) on large-area substrates. The technologically most advanced applications are organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). For the improvement of performance and efficiency, correct modeling of the electronic processes in the devices is essential. Reliable characterization and validation of the electronic properties of the materials is simultaneously required for the successful optimization of devices. Further

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17

"Thickness dependence of electron transport in amorphous selenium for use in direct conversion flat panel X-ray detectors." Thesis, 2013. http://hdl.handle.net/10388/ETD-2013-04-950.

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Abstract Amorphous Selenium (a-Se) was first commercialized for use as a photoconductor in xerography during the middle of the twentieth century. Since then the hole transport properties of a-Se have been studied extensively, however the study of electron transport remains relatively limited. Flat panel digital X-ray detectors using a-Se as a photoconductor have been developed and are being used in mammographic screening. The charge transport properties of the photoconductor layer will in part determine the performance of the flat panel detector. X-ray absorption causes electron-hole pair gen

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18

Lu, I.-Hsin, and 盧以昕. "Modeling of carrier transport in organic light emitting diode by considering tail states and field dependent mobility model." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/23883702886550869302.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>104<br>Due to the advantages of the organic light-emitting diode(OLED), the OLED has the potential to become the candidate of the next generation display technology. Since the growing market of OLEDs, people need to improve the power efficiency of OLEDs. The study of materials properties becomes very important. As a result, we need to develop simulation program to numerically analyze the electrical properties of the organic devices. To build a model for analyzing electrical properties, we used the 1D Poisson and drift-diffusion solver and made a suitable modificati

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19

Kern, Julia. "Field Dependence of Charge Carrier Generation in Organic Bulk Heterojunction Solar Cells." Doctoral thesis, 2013. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-91963.

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In the field of organic photovoltaics, one of the most intensely researched topics to date is the charge carrier photogeneration in organic bulk heterojunction solar cells whose thorough understanding is crucial for achieving higher power conversion efficiencies. In particular, the mechanism of singlet exciton dissociation at the polymer–fullerene interface is still controversially debated. This work addresses the dissociation pathway via relaxed charge transfer states (CTS) by investigating its field dependence for reference material systems consisting of MDMO-PPV and one of the fullerene der

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20

Mao, Lung-Kai, and 毛隆凱. "High carrier mobility organic field-effect transistors with gelatin as gate dielectric." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/13559905101655021124.

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博士<br>國立清華大學<br>材料科學工程學系<br>103<br>Solution-based gelatin thin film was utilized as the gate dielectric material for organic field-effect transistors (OFETs) fabricated on flexible poly(ethylene terephthalate) (PET) substrate. Gelatin is a natural protein with good film forming and insulating properties, which was coated on PET by a low cost solution process. The performance of p-type pentacene OFETs were found to depend on the molecular weight of gelatin dielectric. The pentacene OFETs with 300 bloom gelatin as the gate dielectric exhibited the best performance with a very high average field-

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21

Lüttich, Franziska. "Elektrische und morphologische Charakterisierung organischer Feldeffekttransistoren mit aufgedampften, gesprühten sowie aufgeschleuderten organischen Halbleitern." Doctoral thesis, 2014. https://monarch.qucosa.de/id/qucosa%3A20174.

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Abstract:

In dieser Arbeit werden organische Feldeffekttransistoren (OFETs) aus den verschiedenen Materialien Manganphthalocyanin (MnPc), [6,6]Phenyl-C61-butansäuremethylester (PCBM), 6,13-Bis(triisopropylsilyethinyl)pentacen (TIPS-Pentacen) und N,N’- Bis(n-octyl)-1,6-Dicyanoperylen-3,4:9,10-Bis(Dicarboximid) (PDI8-CN2) hergestellt. Dabei finden unterschiedliche Abscheidemethoden wie die Molekularstrahlabscheidung, die Ultraschallsprühbeschichtung und die Drehbeschichtung Anwendung. Die Morphologie sowie die Funktionsweise der Transistoren werden in Abhängigkeit von den Herstellungsparametern und bezügl

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22

Widmer, Johannes. "Charge transport and energy levels in organic semiconductors." Doctoral thesis, 2013. https://tud.qucosa.de/id/qucosa%3A28350.

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Abstract:

Organic semiconductors are a new key technology for large-area and flexible thin-film electronics. They are deposited as thin films (sub-nanometer to micrometer) on large-area substrates. The technologically most advanced applications are organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). For the improvement of performance and efficiency, correct modeling of the electronic processes in the devices is essential. Reliable characterization and validation of the electronic properties of the materials is simultaneously required for the successful optimization of devices. Further

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