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Journal articles on the topic 'Fringing-fields'

Author: Grafiati

Published: 3 June 2025

Last updated: 19 July 2025

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1

Sloggett, G. J., N. G. Barton, and S. J. Spencer. "Fringing fields in disc capacitors." Journal of Physics A: Mathematical and General 19, no. 14 (1986): 2725–36. http://dx.doi.org/10.1088/0305-4470/19/14/012.

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2

Martirosyan, Yu L. "Effect of fringing fields in storage rings." Technical Physics 48, no. 10 (2003): 1330–32. http://dx.doi.org/10.1134/1.1620130.

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3

Sloggett, G. J., N. G. Barton, and S. J. Spencer. "Addendum to 'Fringing fields in disc capacitors'." Journal of Physics A: Mathematical and General 20, no. 12 (1987): 4061–62. http://dx.doi.org/10.1088/0305-4470/20/12/053.

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4

Gennarakis, G. G., and T. J. M. Zouros. "Experimental energy resolution of a paracentric hemispherical deflector analyzer for different entry positions and bias simulated in SIMION." HNPS Proceedings 21 (March 8, 2019): 100. http://dx.doi.org/10.12681/hnps.2011.

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Results from the simulation of a biased paracentric hemispherical deflector analyzer (HDA) with injection lens are presented. The finite differences electron optics software SIMION was used to perform Monte Carlo type trajectory simulations in an effort to investigate the focusing effects of the HDA entry and exit fringing fields which are used to improve energy resolution - a novel feature of this type of analyzer. Comparisons to recent experimental results are also presented. Biased paracentric HDAs represent a novel class of HDAs, which use the lensing action of the strong fringing fields at the HDA entry, to restore the first order focus characteristics of ideal HDAs in a controlled way. The improvement in energy resolution and transmission without the use of any additional fringing field correction electrodes is of particular interest to modern analyzers using position sensitive detectors.

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5

Dean, Robert, Aditi Rane, Colin Stevens, Michael Baginski, Zane Hartzog, and David Elton. "Implementing Fringing Field Sensors in PCB Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 000579–98. http://dx.doi.org/10.4071/2010dpc-ta22.

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Interdigitated electrode structures are well suited for realizing capacitors where a significant percentage of the total capacitance in due to the out of plane fringing fields. An object that interferes with the fringing fields will then change the measurable capacitance between the electrodes. Therefore this configuration can be used as a sensor for the object that interferes with the fringing fields and is called a capacitive fringing field sensor. These types of sensors have been used in many applications, such as water detection, moisture content measurement and as proximity switches. Printed circuit board (PCB) technology is particularly useful for realizing this type of sensor architecture. The interdigitated electrode structures can be patterned in the Cu cladding on one or both sides of the substrate. The solder mask coating can then be used to insulate the electrodes to prevent shorting in the presence of water or other conductive substances. The size and spacing of the electrode structures can be optimized to adjust the sensitivity of the sensor to the measurand of interest. The implementation of this type of sensor in PCB technology has several advantages when compared to traditional MEMS technologies. External electronics can readily be attached to the PCB substrate. Very large sensor panels can be manufactured easily and economically. Other types of MEMS sensors have been implemented in PCB technology in recent years. This sensor is compatible with those types of sensors and could be used to augment sensor suites implemented in PCB MEMS technology. Demonstration prototype fringing field sensors were implemented in PCB technology for measuring the mass of small quantities of water, for measuring soil moisture content and for use as capacitive touch switches.

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6

Singh Dhingra, Tejveer. "Influence of Variable Plate Separation on Fringing Electric Fields in Parallel-Plate Capacitors." International Journal of Science and Research (IJSR) 11, no. 11 (2022): 387–89. http://dx.doi.org/10.21275/sr221026094109.

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7

Krakover, Naftaly, B. Robert Ilic, and Slava Krylov. "Micromechanical resonant cantilever sensors actuated by fringing electrostatic fields." Journal of Micromechanics and Microengineering 32, no. 5 (2022): 054001. http://dx.doi.org/10.1088/1361-6439/ac5a61.

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Abstract We report on the architecture and operational principle of a resonant cantilever-type displacement sensor. The device is actuated electrostatically by a side electrode that is coplanar with the cantilever and by a gap-closing electrode positioned underneath the beam. The unique electrode geometry combined with the appropriate actuating voltages allows positioning of the cantilever in close proximity to the bistability threshold, where the frequency sensitivity to the electrode displacement is enhanced. Using a reduced order model backed by numerical simulations, the dependencies of the device frequency on the beam’s deflections and the actuation voltages were mapped. We show wide-range tunability that spans a range between softening and hardening behavior. We demonstrate displacement sensing using fabricated single crystal silicon ≈2000 µm long, ≈5 µm thick cantilevers. When compared to a resonant cantilever sensor actuated solely by a gap-closing electrode, measurements from our fringing field actuated devices show a four times higher sensitivity of ≈98 Hz µm−1. The suggested approach may find applications in a broad range of micro and potentially nano-scale applications including resonant inertial, force, mass and bio-sensors.

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8

Mayergoyz, I., and D. Bloomberg. "Analytical solution for side-fringing fields in perpendicular recording." IEEE Transactions on Magnetics 22, no. 3 (1986): 163–67. http://dx.doi.org/10.1109/tmag.1986.1064299.

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9

Krylov, Slava, Bojan R. Ilic, and Stella Lulinsky. "Bistability of curved microbeams actuated by fringing electrostatic fields." Nonlinear Dynamics 66, no. 3 (2011): 403–26. http://dx.doi.org/10.1007/s11071-011-0038-y.

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10

Marni, Stefano, Raouf Barboza, Ayomide S. Oluwajoba, Riccardo Zamboni, and Liana Lucchetti. "Polarization Coupling between Ferroelectric Liquids and Ferroelectric Solids: Effects of the Fringing Field Profile." Crystals 14, no. 5 (2024): 425. http://dx.doi.org/10.3390/cryst14050425.

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Recent experiments devoted to characterizing the behavior of sessile ferroelectric liquid droplets on ferroelectric solid substrates have shown the existence of a droplet electromechanical Rayleigh-like instability. The instability is induced by the bulk polarization of the ferroelectric fluid, which couples to the polarization of the underlying substrate through its fringing field and solid–fluid interface coupling. With the aim of characterizing this phenomenon, namely the coupling between the polarizations of a fluid and a solid material, we studied the behavior of ferroelectric liquid droplets confined between two solid substrates, arranged in different configurations, realized to generate fringing fields with different profiles. The results show that the features of the droplets instability are indeed affected by the specific fringing field shape in a way dominated by the minimization of the electrostatic energy associated with the bulk polarization of the ferroelectric fluid.

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11

Kumar, Arun, P. S. T. N. Srinivas, Shiv Bhushan, Sarvesh Dubey, Yatendra Kumar Singh, and Pramod Kumar Tiwari. "Threshold Voltage Modeling of Double Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors (DGAA MOSFETs) Including the Fringing Field Effects." Journal of Nanoelectronics and Optoelectronics 14, no. 11 (2019): 1555–64. http://dx.doi.org/10.1166/jno.2019.2658.

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In this paper, an analytical threshold voltage model of double gate-all-around metal-oxide-semiconductorfield-effect-transistors (DGAA MOSFETs) including the fringing field effects is developed. The total fringing capacitance arising due to induced fringing fields in the device is divided into inner, outer and bottom fringing capacitance. A simple expression for each fringe capacitance is developed individually. The 3-D Poisson's equation has been solved in the channel region using the parabolic potential approximation method to develop the surface potential expressions. The effects of fringing capacitances of inner and outer gates which causes charge induction in the source/drain regions have been incorporated within the developed surface potential expressions. The change in potential due to these induced charges of source/drain region along the channel is formulated and added with the developed surface potential expression at both surfaces. The obtained modified surface potential equations have been utilized to derive the expression of the threshold voltage of the device. The performance of the proposed model has been compared with the previously developed model of DGAA MOSFET structure without High-k dielectrics. The effects of variation of device parameters on the threshold voltage have been also analyzed. The accuracy of the proposed model has been verified by numerical simulation results obtained by a device simulator VTCAD from Cogenda Int.

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12

Lulinsky, Stella, Ben Torteman, Bojan R. Ilic, and Slava Krylov. "Parametric Amplification of Acoustically Actuated Micro Beams Using Fringing Electrostatic Fields." Micromachines 15, no. 2 (2024): 257. http://dx.doi.org/10.3390/mi15020257.

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We report on theoretical and experimental investigation of parametric amplification of acoustically excited vibrations in micromachined single-crystal silicon cantilevers electrostatically actuated by fringing fields. The device dynamics are analyzed using the Mathieu–Duffing equation, obtained using the Galerkin order reduction technique. Our experimental results show that omnidirectional acoustic pressure used as a noncontact source for linear harmonic driving is a convenient and versatile tool for the mechanical dynamic characterization of unpackaged, nonintegrated microstructures. The fringing field’s electrostatic actuation allows for efficient parametric amplification of an acoustic signal. The suggested amplification approach may have applications in a wide variety of micromechanical devices, including resonant sensors, microphones and microphone arrays, and hearing aids. It can be used also for upward frequency tuning.

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13

Bae, J. U., T. Y. Lin, Y. Yoon, et al. "Characterization of Nanomagnet Fringing Fields in Hybrid Semiconductor/Ferromagnetic Devices." IEEE Transactions on Magnetics 44, no. 12 (2008): 4706–10. http://dx.doi.org/10.1109/tmag.2008.2002924.

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14

Martirosyan, Y. L. "Study of CANDLE tunes dependence on fringing fields of quadrupoles." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 521, no. 2-3 (2004): 556–64. http://dx.doi.org/10.1016/j.nima.2003.11.106.

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15

Gomez, R. D., I. D. Mayergoyz, and E. R. Burke. "Direct imaging of track edge fringing fields on recorded media." Journal of Applied Physics 75, no. 10 (1994): 5756–58. http://dx.doi.org/10.1063/1.355605.

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16

Wang, Zhichong, Qichang Zhang, Wei Wang, and Jianxin Han. "Dynamic Analysis of a Micro Beam-Based Tactile Sensor Actuated by Fringing Electrostatic Fields." Micromachines 10, no. 5 (2019): 324. http://dx.doi.org/10.3390/mi10050324.

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A new kind of fringing electrostatic actuation mode is developed. In this new actuation mode, the expression of fringing electrostatic force is found. The nonlinear dynamic analysis of this new actuation mode is presented by using the Method of Multiple Scales. An experiment is designed to observe the dynamic behaviors of this structure. It is observed that the resonance frequency rises with the increase of the initial displacement and the decrease of the slit gap; a smaller slit gap makes marked change of the resonance frequency in the same range of the initial displacement; the increase of the vibration amplitude is linear with the increase of the initial displacement; the fringing electrostatic force has a larger impact on the frequency response of the nonlinear vibration when the initial displacement, the beam length and the actuated voltage are larger. This new fringing electrostatic actuation mode can be used in a micro tactile sensor. The results of dynamic analysis can provide support for sensor design. Based on the dynamic investigations into the micro cantilevered beam actuated by fringing electrostatic force; three usage patterns of the sensor are introduced as follows. Firstly, measuring resonance frequency of the micro beam can derive the initial displacement. Second, the initial displacement can be derived from vibration amplitude measurement. Third, jump phenomenon can be used to locate the initial displacement demand.

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17

Chiu, S. C., V. S. Chan, F. W. Perkins, and S. Puri. "Coupling of the fringing fields of an ion‐Bernstein wave antenna." Physics of Fluids B: Plasma Physics 3, no. 1 (1991): 159–66. http://dx.doi.org/10.1063/1.859933.

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18

Mayergoyz, I. D., R. Madabhushi, E. R. Burke, and R. D. Gomez. "Analytical solution for the side-fringing fields of narrow beveled heads." Journal of Applied Physics 81, no. 8 (1997): 4850–52. http://dx.doi.org/10.1063/1.364855.

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19

West, Adam D., Thomas J. Hayward, Kevin J. Weatherill, Thomas Schrefl, Dan A. Allwood, and Ifan G. Hughes. "A simple model for calculating magnetic nanowire domain wall fringing fields." Journal of Physics D: Applied Physics 45, no. 9 (2012): 095002. http://dx.doi.org/10.1088/0022-3727/45/9/095002.

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20

Gao, Xiang, Yiqiang Zhao, and Haocheng Ma. "Fringing Electric Field Sensors for Anti-Attack at System-Level Protection." Sensors 18, no. 9 (2018): 3034. http://dx.doi.org/10.3390/s18093034.

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Information system security has been in the spotlight of individuals and governments in recent years. Integrated Circuits (ICs) function as the basic element of communication and information spreading, therefore they have become an important target for attackers. From this perspective, system-level protection to keep chips from being attacked is of vital importance. This paper proposes a novel method based on a fringing electric field (FEF) sensor to detect whether chips are dismantled from a printed circuit board (PCB) as system-level protection. The proposed method overcomes the shortcomings of existing techniques that can be only used in specific fields. After detecting a chip being dismantled from PCB, some protective measures like deleting key data can be implemented to be against attacking. Fringing electric field sensors are analyzed through simulation. By optimizing sensor’s patterns, areas and geometrical parameters, the methods that maximize sensitivity of fringing electric field sensors are put forward and illustrated. The simulation is also reproduced by an experiment to ensure that the method is feasible and reliable. The results of experiments are inspiring in that they prove that the sensor can work well for protection of chips and has the advantage of universal applicability, low cost and high reliability.

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21

Hällstig, Emil, Johan Stigwall, Torleif Martin, Lars Sjöqvist, and Mikael Lindgren. "Fringing fields in a liquid crystal spatial light modulator for beam steering." Journal of Modern Optics 51, no. 8 (2004): 1233–47. http://dx.doi.org/10.1080/09500340408230419.

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22

Hällstig, Emil, Torleif Martin, Lars Sjöqvist, Mikael Lindgren, and Johan Stigwall. "Fringing fields in a liquid crystal spatial light modulator for beam steering." Journal of Modern Optics 51, no. 8 (2004): 1233–47. http://dx.doi.org/10.1080/09500340410001648465.

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23

Roshen, W. A. "High-Frequency Fringing Fields Loss in Thick Rectangular and Round Wire Windings." IEEE Transactions on Magnetics 44, no. 10 (2008): 2396–401. http://dx.doi.org/10.1109/tmag.2008.2002302.

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24

Newcombe, D. J., X. G. Jiang, W. B. Taylor, and F. P. Ottensmeyer. "A small sensitive magnetometer for measurement of fringing fields near magnetic sectors." Measurement Science and Technology 5, no. 11 (1994): 1355–58. http://dx.doi.org/10.1088/0957-0233/5/11/006.

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25

Ouakad, Hassen M. "Electrostatic fringing-fields effects on the structural behavior of MEMS shallow arches." Microsystem Technologies 24, no. 3 (2016): 1391–99. http://dx.doi.org/10.1007/s00542-016-2985-1.

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26

Hunter, Kevin L., and Bruce J. McIntosh. "An improved model of the fringing fields of a quadrupole mass filter." International Journal of Mass Spectrometry and Ion Processes 87, no. 2 (1989): 157–64. http://dx.doi.org/10.1016/0168-1176(89)80019-9.

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27

Schwarzbek, S. M., and S. T. Ruggiero. "The Effect of Fringing Fields on the Resistance of a Conducting Film." IEEE Transactions on Microwave Theory and Techniques 34, no. 9 (1986): 977–81. http://dx.doi.org/10.1109/tmtt.1986.1133479.

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28

Koeppe, P. V., M. E. Re, and M. H. Kryder. "Effect of pole tip alignment on magnetic fringing fields from recording heads." Journal of Applied Physics 63, no. 8 (1988): 4042–44. http://dx.doi.org/10.1063/1.340543.

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29

Ouakad, Hassen M., Fehmi Najar, and Najib Kacem. "On the Structural Behavior of MEMS Shallow Arch under Combined Effects of In-Plane Parallel Fields and Out-of-Plane Fringing-Fields." Actuators 12, no. 10 (2023): 374. http://dx.doi.org/10.3390/act12100374.

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We propose to study the nonlinear stroke and lower-order modal interactions of a clamped–clamped shallow-arch flexible micro-electrode. The flexible electrode is electrically actuated through an in-plane parallel-plates field superimposed over out-of-plane electrostatic fringing fields. The in-plane electrostatic fields result from a difference of potential between the initially curved flexible electrode and a lower stationary parallel-grounded electrode. Moreover, the out-of-plane fringing fields are mainly due to the out-of-plane asymmetry of the flexible shallow arch and two respective surrounding stationary side electrodes (left and right). A nonlinear beam model is first introduced, consisting of a nonlinear partial differential equation governing the flexible shallow-arch in-plane deflection. Then, a resultant reduced-order model (ROM) is derived assuming a Galerkin modal decomposition with mode-shapes of a clamped–clamped beam as basis functions. The ROM coupled modal equations are numerically solved to obtain the static deflection. The results indicate the possibility of mono-stable and bi-stable structural behaviors for this particular device, depending on the flexible electrode’s initial rise and the size of its stationary side electrodes. The eigenvalue problem is also derived and examined to estimate the variation of the first three lower natural frequencies of the device when the microbeam is electrostatically actuated. The proposed micro-device is tunable with the possibility of pull-in-free states in addition to modal interactions through linear coupled mode veering and crossover processes. Remarkably, the veering zone between the first and third modes can be electrostatically adjusted and reach 22.6kHz for a particular set of design parameters.

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30

Ghannam, Rami, Yuanjie Xia, Dezhi Shen, F. Anibal Fernandez, Hadi Heidari, and Vellasaimy A. L. Roy. "Reconfigurable Surfaces Using Fringing Electric Fields from Nanostructured Electrodes in Nematic Liquid Crystals." Advanced Theory and Simulations 4, no. 7 (2021): 2100058. http://dx.doi.org/10.1002/adts.202100058.

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31

Bhatnagar, S. K. "New Model for Effect of Fringing Fields on Radius of Circular Microstrip Antenna." SKIT Research Journal 11, no. 3 (2021): 25. http://dx.doi.org/10.47904/ijskit.11.3.2021.25-28.

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32

Lindquist, R. G., T. M. Leslie, J. H. Kulick, et al. "High-resolution liquid-crystal phase grating formed by fringing fields from interdigitated electrodes." Optics Letters 19, no. 9 (1994): 670. http://dx.doi.org/10.1364/ol.19.000670.

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33

Monson, J. E. "Fringing fields from step transitions of longitudinal and perpendicular magnetization on finite tracks." IEEE Transactions on Magnetics 24, no. 6 (1988): 3108–10. http://dx.doi.org/10.1109/20.92350.

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34

Linzon, Yoav, Bojan Ilic, Stella Lulinsky, and Slava Krylov. "Efficient parametric excitation of silicon-on-insulator microcantilever beams by fringing electrostatic fields." Journal of Applied Physics 113, no. 16 (2013): 163508. http://dx.doi.org/10.1063/1.4802680.

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35

Meessen, K. J., B. L. J. Gysen, J. J. H. Paulides, and E. A. Lomonova. "General Formulation of Fringing Fields in 3-D Cylindrical Structures Using Fourier Analysis." IEEE Transactions on Magnetics 48, no. 8 (2012): 2307–23. http://dx.doi.org/10.1109/tmag.2012.2192939.

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36

Zouros, T. J. M., Omer Sise, Melike Ulu, and Mevlut Dogan. "Using the fringing fields of a hemispherical spectrograph to improve its energy resolution." Measurement Science and Technology 17, no. 12 (2006): N81—N86. http://dx.doi.org/10.1088/0957-0233/17/12/n02.

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37

Berdnikov, A. S., L. N. Gall, A. S. Antonov, and K. V. Soloviev. "Synthesis of Fringing Magnetic Fields for Static Mass Analyzers of the Spectrographic Type." Journal of Analytical Chemistry 73, no. 14 (2018): 1301–16. http://dx.doi.org/10.1134/s1061934818140034.

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38

McIntosh, Bruce J., and Kevin L. Hunter. "Influence of realistic fringing fields on the acceptance of a quadrupole mass filter." International Journal of Mass Spectrometry and Ion Processes 87, no. 2 (1989): 165–79. http://dx.doi.org/10.1016/0168-1176(89)80020-5.

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39

Leong, M. S. "The Effect of Fringing Fields on the Resistance of a Conducting Film (Comments)." IEEE Transactions on Microwave Theory and Techniques 35, no. 6 (1987): 601. http://dx.doi.org/10.1109/tmtt.1987.1133712.

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40

Valluri, S. R., D. J. Jeffrey, and R. M. Corless. "Some applications of the Lambert W function to physics." Canadian Journal of Physics 78, no. 9 (2000): 823–31. http://dx.doi.org/10.1139/p00-065.

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Two standard physics problems are solved in terms of the Lambert W function, to show the applicability of this recently defined function to physics. Other applications of the function are cited, but not described. The problems solved concern Wien's displacement law and the fringing fields of a capacitor, the latter problem being representative of some problems solved using conformal transformations. The physical content of the solutions remains unchanged, but they gain a new elegance and convenience. PACS No.: 41.10F

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41

Ichida, Yu, and Takashi Okuda Sakamoto. "Radially symmetric stationary solutions for a MEMS type reaction–diffusion equation with fringing field." Nonlinearity 36, no. 1 (2022): 71–109. http://dx.doi.org/10.1088/1361-6544/ac9bc3.

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Abstract Radially symmetric stationary solutions for a micro-electro-mechanical system (MEMS) type reaction–diffusion equation with fringing field are considered. This equation arises in the study of the MEMS devices. This paper is devoted to the study of the existence of these solutions, information about their shape, and their asymptotic behaviour. These are studied by applying the framework that combines Poincaré type compactification, classical dynamical systems theory, and geometric methods for desingularization of vector fields called the blow-up technique.

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42

Henning, Alex, Nandhini Swaminathan, Yonathan Vaknin, et al. "Control of the Intrinsic Sensor Response to Volatile Organic Compounds with Fringing Electric Fields." ACS Sensors 3, no. 1 (2018): 128–34. http://dx.doi.org/10.1021/acssensors.7b00754.

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43

Mohammad, Tausiff F., and Hassen M. Ouakad. "Static, eigenvalue problem and bifurcation analysis of MEMS arches actuated by electrostatic fringing-fields." Microsystem Technologies 22, no. 1 (2014): 193–206. http://dx.doi.org/10.1007/s00542-014-2372-8.

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44

Breitkreutz, Stephan, Irina Eichwald, Josef Kiermaier, et al. "Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields." Journal of Applied Physics 115, no. 17 (2014): 17D506. http://dx.doi.org/10.1063/1.4864737.

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45

Ernst, Thomas, Romain Ritzenthaler, Olivier Faynot, and Sorin Cristoloveanu. "A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs." IEEE Transactions on Electron Devices 54, no. 6 (2007): 1366–75. http://dx.doi.org/10.1109/ted.2007.895241.

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46

Vuong. "A FINITE ELEMENT METHOD FOR MODELING OF ELECTROMAGNETIC PROBLEMS." Journal of Military Science and Technology, no. 66A (May 6, 2020): 25–31. http://dx.doi.org/10.54939/1859-1043.j.mst.66a.2020.25-31.

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Electromagnetic devices are present everywhere in our daily life. In particular, they extremely play an important role in the fields of the electrical system. Therefore, the modeling and analyzing the electromagetic problems become currently a matter of concern and topicality for researchers and designers of electrical devices. This paper introduces a finite element method to compute accurate distributions of leakage and fringing fluxes with air-gap variations, and eddy current losses of the magnetic circuits, that cannot generally be solved by a direct analytic method. The method is approached for the magnetic flux density formulation.

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47

Halevy, Omer, Erez B. Benjamin, Yoav Kessler, and Slava Krylov. "Resonant Sensing Element Realized as a Single Crystal Si Cantilever Actuated by Fringing Electrostatic Fields." IEEE Sensors Journal 21, no. 9 (2021): 10454–64. http://dx.doi.org/10.1109/jsen.2021.3059323.

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48

SAKURAI, Toru, and Morio ISHIHARA. "The Influences of Fringing Fields of an Electrostatic Sector Analyzer in Fifth Order Aberration Coefficients." Journal of the Mass Spectrometry Society of Japan 43, no. 1 (1995): 9–17. http://dx.doi.org/10.5702/massspec.43.9.

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49

Khan, Mohammad Rezwan, Mohammad Ariful Islam, Mohammad Masum Rana, Tohfa Haque, and Shahal Ibn Islam Joy. "A Circuit Model for Energy Harvesting from Fringing Electric Fields for Mobile Wearable Device Applications." Energies 14, no. 21 (2021): 7016. http://dx.doi.org/10.3390/en14217016.

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Harvesting energy from the fringing electric field of power lines is a topic of recent interest. So far, most of the reported energy harvesting processes used a fixed ground connection that makes the harvesting process immobile. This paper presents a new idea to avoid the fixed ground connection and make the extraction process mobile, which can lead to charging of wearable and mobile devices, reducing the frequency of battery charging and enhancing the longevity of the batteries. A comprehensive circuit model for the energy extraction system is still absent, and this research proposes a circuit model that forms a basis for the circuit design and prediction of the energy extraction efficacy. The circuit model provides the analytical basis to estimate charging time, optimum operating voltage and optimum power for such circuits. Experimental results are also presented to justify the circuit model. Although the actual amount of power extracted was very small, further research is needed to enhance the energy extraction efficacy.

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Pershenkov, V. S., and V. V. Chuikin. "The effect of junction fringing fields on radiation-induced leakage current in oxide isolation structures." IEEE Transactions on Nuclear Science 39, no. 6 (1992): 2044–51. http://dx.doi.org/10.1109/23.211402.

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