Journal articles: 'Gallium III ion'

1

Vallini, F., L. A. M. Barea, E. F. Dos Reis, A. A. Von Zuben, and N. C. Frateschi. "Induced Optical Losses in Optoelectronic Devices due Focused Ion Beam Damages." Journal of Integrated Circuits and Systems 7, no. 2 (December 27, 2012): 87–91. http://dx.doi.org/10.29292/jics.v7i2.359.

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A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analyzes shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisks resonators are fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due optical scattering losses induced by implanted gallium atoms.

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2

Rubanov, S., and P. R. Munroe. "Damage in III–V Compounds during Focused Ion Beam Milling." Microscopy and Microanalysis 11, no. 5 (March 4, 2005): 446–55. http://dx.doi.org/10.1017/s1431927605050294.

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The damage layers generated in III–V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

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3

Eddy, Charles R. "Etch Processing of III-V Nitrides." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 902–13. http://dx.doi.org/10.1557/s1092578300003586.

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As III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AlN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

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4

Safavi, Afsaneh, and Marzieh Sadeghi. "A PVC-membrane bulk optode for gallium(III) ion determination." Talanta 71, no. 1 (January 15, 2007): 339–43. http://dx.doi.org/10.1016/j.talanta.2006.04.029.

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5

Stojnova, Kirila, Kiril Gavazov, Galya Toncheva, Vanya Lekova, and Atanas Dimitrov. "Extraction-spectrophotometric investigations on two ternary ion-association complexes of gallium(III)." Open Chemistry 10, no. 4 (August 1, 2012): 1262–70. http://dx.doi.org/10.2478/s11532-012-0045-y.

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AbstractComplex formation and liquid-liquid extraction were studied in systems containing Ga(III), azoderivative of resorcinol {4-(2-pyridylazo)resorcinol (PAR) or 4-(2-thiazolylazo)resorcinol (TAR)}, 2,3,5-triphenyltetrazolium chloride (TTC), water and chloroform. The optimum conditions w.r.t. pH, extraction time, concentration of ADR and concentration of TTC for the extraction of Ga(III) as an ion-associate complex were found.. The composition of the extracted complexes, (TT+)[Ga(PAR)2] (I), (TT+)[Ga(TAR)2] (II) or (TT+)2[Ga(OH)(TAR)2] (III), and the constants of association (β) between 2,3,5-triphenyltetrazolium cation (TT+) with corresponding anionic chelates were established by several methods. The constants of distribution (KD) and extraction (Kex) of the principal species I and III were determined as well. The apparent molar absorptivities of the chloroform extract at the optimum extraction-spectrophotometric conditions were ɛ′510=9.5×104 L mol−1 cm−1 (I) and ɛ′530=4.6×104 L mol−1 cm−1 (III). The validity of Beer’s law was checked and analytical characteristics that were calculated are reported herein.

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6

Obi, Hideki, Tadashi Segawa, and Takao Yotsuyanagi. "Ion-Associate Solvent Extraction of Gallium(III) from Aqueous Sodium Hydroxide Solution." Chemistry Letters 18, no. 4 (April 1989): 547–50. http://dx.doi.org/10.1246/cl.1989.547.

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7

Yamashoji, Yuko, Takayuki Matsushita, Minoru Tanaka, Toshiyuki Shono, and Masanori Wada. "Ion-pair extraction of the gallium(III) ion from hydrochloric acid with various methoxy- substituted triarylphosphines." Polyhedron 8, no. 8 (January 1989): 1053–59. http://dx.doi.org/10.1016/s0277-5387(00)81119-5.

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8

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (February 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.

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9

Todorov, Lozan, Luciano Saso, Khedidja Benarous, Maria Traykova, Abderahmane Linani, and Irena Kostova. "Synthesis, Structure and Impact of 5-Aminoorotic Acid and Its Complexes with Lanthanum(III) and Gallium(III) on the Activity of Xanthine Oxidase." Molecules 26, no. 15 (July 26, 2021): 4503. http://dx.doi.org/10.3390/molecules26154503.

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The superoxide radical ion is involved in numerous physiological processes, associated with both health and pathology. Its participation in cancer onset and progression is well documented. Lanthanum(III) and gallium(III) are cations that are known to possess anticancer properties. Their coordination complexes are being investigated by the scientific community in the search for novel oncological disease remedies. Their complexes with 5-aminoorotic acid suppress superoxide, derived enzymatically from xanthine/xanthine oxidase (X/XO). It seems that they, to differing extents, impact the enzyme, or the substrate, or both. The present study closely examines their chemical structure by way of modern methods—IR, Raman, and 1H NMR spectroscopy. Their superoxide-scavenging behavior in the presence of a non-enzymatic source (potassium superoxide) is compared to that in the presence of an enzymatic source (X/XO). Enzymatic activity of XO, defined in terms of the production of uric acid, seems to be impacted by both complexes and the pure ligand in a concentration-dependent manner. In order to better relate the compounds’ chemical characteristics to XO inhibition, they were docked in silico to XO. A molecular docking assay provided further proof that 5-aminoorotic acid and its complexes with lanthanum(III) and gallium(III) very probably suppress superoxide production via XO inhibition.

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10

Yamashoji, Yuko, Takayuki Matsushita, Masanori Wada, and Toshiyuki Shono. "Ion-pair Extraction of Gallium(III) from Hydrochloric Acid with Various Methoxy-substituted Triarylphosphines." Chemistry Letters 17, no. 1 (January 5, 1988): 43–46. http://dx.doi.org/10.1246/cl.1988.43.

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11

Zhang, Zaihui, T. L. Thomas Hui, and Chris Orvig. "One-pot synthesis of N-substituted-3-hydroxy-4-pyridinone chelate complexes of aluminum, gallium, and indium." Canadian Journal of Chemistry 67, no. 11 (November 1, 1989): 1708–10. http://dx.doi.org/10.1139/v89-263.

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A series of tris(3-hydroxy-2-methyl-4-pyridinonato)metal(III) and tris(3-hydroxy-6-hydroxymethyl-4-pyridinonato)metal(III) complexes have been prepared in water by one-pot synthesis directly from maltol and kojic acid, respectively, and the metal ion (M = Al, Ga, In) with an appropriate amine. The pyridinones have substituents at the ring nitrogen atom (CH3, C2H5). The tris(3-hydroxy-4-pyronato)metal(III) complexes are formed insitu and these undergo nucleophilic attack by the primary amine; the appropriate tris(3-hydroxy-4-pyridinonato)metal(III) complexes are obtained. This method bypasses the sequential syntheses of ligand and metal complex, and has improved the yields of the tris(ligand)metal complexes, in particular by making them much more easily accessible. The electronic effects of binding the pyrone to the metal ions and of the substituents on the pyrone ring on the reactivity are discussed. Keywords: 3-hydroxy-4 pyridinone complexes, group 13 metal ions, one-pot synthesis.

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12

Nakayama, Morio, and Hiroaki Egawa. "Recovery of Gallium(III) from Strongly Alkaline Media Using a Kelex-100-Loaded Ion-Exchange Resin." Industrial & Engineering Chemistry Research 36, no. 10 (October 1997): 4365–68. http://dx.doi.org/10.1021/ie9700270.

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13

Goswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (May 19, 2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.

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In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

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14

Evers, Ann, Robert D. Hancock, Arthur E. Martell, and Ramunas J. Motekaitis. "Metal ion recognition in ligands with negatively charged oxygen donor groups. Complexation of iron(III), gallium(III), indium(III), aluminum(III), and other highly charged metal ions." Inorganic Chemistry 28, no. 11 (May 1989): 2189–95. http://dx.doi.org/10.1021/ic00310a035.

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15

Zavada, J. M., Myo Thaik, U. Hömmerich, J. D. MacKenzie, C. R. Abernathy, F. Ren, H. Shen, et al. "Luminescence from Erbium-Doped Gallium Nitride Thin Films." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 926–32. http://dx.doi.org/10.1557/s1092578300003616.

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The III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 µm) and infrared (at ∼ 1.54 µm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 µm have been measured.

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16

Stojnova, K. T., V. V. Divarov, P. V. Racheva, and V. D. Lekova. "Extraction-Spectrophotometric Method for Determination of Gallium(III) in the Form of Ion Associate with a Monotetrazolium Salt." Journal of Applied Spectroscopy 82, no. 5 (November 2015): 853–56. http://dx.doi.org/10.1007/s10812-015-0193-x.

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17

Rudolph, Wolfram W., and Cory C. Pye. "Gallium(iii) hydration in aqueous solution of perchlorate, nitrate and sulfate. Raman and 71-Ga NMR spectroscopic studies and ab initio molecular orbital calculations of gallium(iii) water clustersElectronic supplementary information (ESI) available: Unscaled HF/6-31+G* frequencies, intensities and force constants of the hexaaqua-Ga(iii) ion, octadeca-aqua gallium(iii) and octadeca-aqua gallium(iii) cluster. See http://www.rsc.org/suppdata/cp/b2/b202567c/." Physical Chemistry Chemical Physics 4, no. 18 (August 12, 2002): 4319–27. http://dx.doi.org/10.1039/b202567c.

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18

Aghabozorg, Hossein, Farshid Ramezanipour, Parvaneh D. Kheirollahi, Ali A. Saei, Ardeshir Shokrollahi, Mojtaba Shamsipur, Faranak Manteghi, Janet Soleimannejad, and Mahboubeh A. Sharif. "Novel Complexes of Gallium(III), Indium(III), and Thallium(III) with Pyridine-Containing Proton Transfer Ion Pairs Obtained from Dipicolinic Acid - Synthesis, Characterization and X-ray Crystal Structure." Zeitschrift für anorganische und allgemeine Chemie 632, no. 1 (January 2006): 147–54. http://dx.doi.org/10.1002/zaac.200500321.

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19

Rogers, Joanne J., Kenneth J. D. MacKenzie, Gregory Rees, and John V. Hanna. "New phosphors based on the reduction of Eu(III) to Eu(II) in ion-exchanged aluminosilicate and gallium silicate inorganic polymers." Ceramics International 44, no. 1 (January 2018): 1110–19. http://dx.doi.org/10.1016/j.ceramint.2017.10.066.

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20

Gries, Katharina I., Katharina Werner, Andreas Beyer, Wolfgang Stolz, and Kerstin Volz. "FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si." Microscopy and Microanalysis 22, no. 1 (January 7, 2016): 131–39. http://dx.doi.org/10.1017/s1431927615015615.

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AbstractMelt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.

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21

Piętak, Karolina, Sebastian Złotnik, Ewelina Rozbiegała, Paweł P. Michałowski, Marek Wójcik, Jarosław Gaca, and Mariusz Rudziński. "Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling." Journal of Materials Science: Materials in Electronics 31, no. 20 (September 17, 2020): 17892–902. http://dx.doi.org/10.1007/s10854-020-04342-2.

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AbstractPhosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

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22

Soleimannejad, J., S. Sheshmani, M. Solimannejad, E. Nazarnia, and F. Hosseinabadi. "Two supramolecular complexes of gallium(III) with different adduct ion pairs containing pyridine-2,6-dicarboxylic acid: Syntheses, characterization, crystal structures and computational study." Journal of Structural Chemistry 55, no. 2 (March 2014): 342–52. http://dx.doi.org/10.1134/s0022476614020231.

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23

Darnbrough, J. E., S. Mahalingam, and Peter E. J. Flewitt. "Micro-Scale Cantilever Testing of Linear Elastic and Elastic-Plastic Materials." Key Engineering Materials 525-526 (November 2012): 57–60. http://dx.doi.org/10.4028/www.scientific.net/kem.525-526.57.

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t is increasingly a requirement to be able to determine the mechanical properties of materials: (i) at the micro-scale, (ii) that are in the form of surface coatings and (iii) that have nanoscale microstructures. As a consequence micro-scale testing is an important tool that has been developed to aid the evaluation of the mechanical properties of such materials. In this work cantilever beam specimens (typically 2μm by 2μm by 10μm in size) have been prepared by gallium ion milling and then deformed in-situ within a FEI Helios Dual Beam workstation. The latter is achieved using a force probe with a geometry suitable for loading the micro-scale test specimens. Thus force and displacement can be measured together with observing the deformation and fracture of the individual specimens. This paper considers the evaluation of the mechanical properties in particular elastic modulus, yield strength and fracture strength of materials that result in relatively large deflections to the micro-scale cantilever beams. Two materials are considered the first is linear elastic single crystal silicon and the other elastic-plastic nanocrystalline (nc) nickel. The results are discussed with respect to the reproducibility of this method of mechanical testing and the evaluated properties are compared with those derived by alternative procedures.

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24

Jordan, A. S., and J. M. Parsey. "Growth and Characterization of GaAs Single Crystals." MRS Bulletin 13, no. 10 (October 1988): 36–43. http://dx.doi.org/10.1557/s0883769400064174.

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From a commercial viewpoint, gallium arsenide (GaAs) is currently the leading member of the III-V compound family. Oriented substrates, cut and polished from single-crystal boules, form the materials foundation for a rapidly maturing technology of high speed and high frequency electronic devices and circuits. The initial thrust of GaAs applications was in high powered lasers and light-emitting diodes (LEDs) fabricated on n-type (Si-doped) GaAs wafers grown by the horizontal Bridgman technique. One of the important benefits of using GaAs is the high electron mobility compared to Si. This property has driven the development of low noise and power field-effect transistors (FETs) for microwave applications. The semi-insulating substrate requirement (>107 Ω-cm) was initially met by chromium doping. Currently, the interest is focused on MMIC (microwave monolithic integrated circuits), MIMIC (millimeter microwave ICs), analog ICs for lightwave transmitters and receivers, and digital ICs. The digital circuits have been realized with ion-implanted FETs, selectively doped heterostructure transistors (SDHTs), and heterostructure bipolar transistors (HBTs). Presently, most of the semi-insulating (SI) material processed by the industry is nominally undoped, and grown by the liquid encapsulated Czochralski (LEC) technique. The SI behavior is attained via a delicate balance of deep EL2 donors and carbon acceptors, avoiding chromium in order to eliminate the anomalous out-diffusion and type-conversion associated with this dopant.GaAs wafers up to 4 inches in diameter, with electrical properties homogenized by whole ingot annealing, are currently available from U.S. domestic and overseas suppliers. However, the overall quality is compromised by the large dislocation densities, varying 104 – 105/cm2.

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25

Zhou, Meisheng, Yan Xu, Choon-Fui Lam, Pak-Hing Leung, Lip-Lin Koh, K. F. Mok, and T. S. Andy Hor. "[Pt2(.mu.-S)2(PPh3)4] as a Metalloligand toward Main-Group Lewis Acids. The First Square-Pyramidal Structure of an Indium(III) Complex Adduct in (PPh3)4Pt2(.mu.3-S)2InCl3 and Tetrahedral Gallium(III) in the Ion Pair [(PPh3)4Pt2(.mu.3-S)2GaCl2][GaCl4]." Inorganic Chemistry 33, no. 7 (March 1994): 1572–74. http://dx.doi.org/10.1021/ic00085a060.

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26

Justice, J., A. Kadiyala, J. Dawson, and D. Korakakis. "Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications." MRS Proceedings 1492 (2013): 123–28. http://dx.doi.org/10.1557/opl.2013.369.

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ABSTRACTWith general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

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27

Horng, S. T., J. H. Madok, N. M. Haegel, and M. S. Goorsky. "High Resolution Triple Axis Diffractometry in Indium-Carbon and Gallium-Carbon Co-implanted Gallium Arsenide." MRS Proceedings 316 (1993). http://dx.doi.org/10.1557/proc-316-655.

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ABSTRACTHigh-resolution x-ray triple axis diffractometry was used to characterize damage recovery in gallium arsenide implanted with gallium or indium ions, and co-implanted with carbon ions. From reciprocal space mapping around the (004) reciprocal lattice point, the evolution of residual strain and the lattice plane tilt induced by the ion implantation and annealing processes were analyzed. The lattice damage in implanted gallium arsenide is dependent on the dose and ion type; annealing subsequently alters the structural properties of the material. For example, In/C co-implanted gallium arsenide shows a greater amount of residual damage as compared to Ga/C co-implanted gallium arsenide after rapid thermal annealing at 885 °C for 5 seconds. For a given Group III ion / C co-implant, we observe the highest p-type activation when the Group III ion and C implant doses are the same. Increasing the Group III ion dose reduces the material quality and has a concomitant negative effect on the electrical properties of the material. These results suggest that reciprocal space maps can provide insight into the relationship between the structure and properties of implanted compound semiconductors.

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28

"Gallium(III) Ion Hydrolysis under Physiological Conditions." Bulletin of the Korean Chemical Society 29, no. 2 (February 20, 2008): 372–76. http://dx.doi.org/10.5012/bkcs.2008.29.2.372.

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29

Eddy, Charles R. "Etch Processing of III-V Nitrides." MRS Proceedings 537 (1998). http://dx.doi.org/10.1557/proc-537-g10.5.

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AbstractAs III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AIN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥ 100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

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30

Ronning, C., E. Dreher, H. Feldermann, M. Sebastian, J. Zweck, R. Fischer, and H. HofsÄss. "Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition." MRS Proceedings 449 (1996). http://dx.doi.org/10.1557/proc-449-331.

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ABSTRACTWe have grown gallium nitride (GaN), aluminum nitride (AIN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AIN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150°C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.

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31

Gierak, Jacques. "Focused Ion Beam nano-patterning from traditional applications to single ion implantation perspectives." Nanofabrication 1, no. 1 (January 1, 2014). http://dx.doi.org/10.2478/nanofab-2014-0004.

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AbstractIn this article we review some fundamentals of the Focused Ion Beam (FIB) technique based on scanning finely focused beams of gallium ions over a sample to perform direct writing. We analyse the main limitations of this technique in terms of damage generation or local contamination and through selected examples we discuss the potential of this technique in the light of the most sensitive analysis techniques. In particular we analyse the limits of Ga-FIB irradiation for the patterning of III-V heterostructures, thin magnetic layers, artificial defects fabricated onto graphite or graphene and atomically thin suspended membranes. We show that many of these earlypointed “limitations” with appropriate attention and analysis can be valuable for FIB instrument development, avoided, or even turned into decisive advantages. Such new methods transferable to the fabrication of devices or surface functionalities are urgently required in the emerging nanosciences applications and markets.

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Stankova, Anastasya V., Aleksandr M. Elokhov, and Andrey E. Lesnov. "Halide and Thiocyanate Metal Acid Complexes Extraction in the Water – Ethoxylated Nonylphenol – Ammonium Sulfate System." Journal of Siberian Federal University. Chemistry, September 2019, 328–35. http://dx.doi.org/10.17516/1998-2836-0130.

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Nonionic ethoxylated surfactants, including ethoxylated nonylphenols, can be considered as neutral oxygen-containing extraction reagents, the formation of delamination systems with which is possible when salting-out with inorganic salts. In this work, the distribution of halide and thiocyanate acid complexes of thallium (III), iron (III), indium and gallium in the water – ethoxylated nonylphenol (neonol AF 9-12) – ammonium sulfate system at 25°C was investigated. It is established that thallium (III) is quantitatively extracted in the form of tetrahalidetallate-ion with an acidity of more than 0.1 mol/l, extraction of other metals is not quantitative. Among the thiocyanate acid complexes, zinc, cobalt and copper (II) are quantitatively concentrated, which can be used for group concentration of these metals or their extraction-spectrophotometric determination methods

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Zavadat, J. M., Myo Thaik, U. Hòmmerich, J. D. MacKenzie, C. R. Abernathy, F. Ren, H. Shen, et al. "Luminescence from Erbium-Doped Gallium Nitride Thin Films." MRS Proceedings 537 (1998). http://dx.doi.org/10.1557/proc-537-g11.1.

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AbstractThe III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metal-organic molecular beam epitaxy (MOMBE). Bandedge (at ∼ 0.34 μm) and infrared (at ∼ 1.54 μm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 Pm have been measured.

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Pouch, John J., Samuel A. Alterovitz, Kazuhisa Miyoshi, and Joseph O. Warner. "Boron Nitride: Composition, Optical Properties, and Mechanical Behavior." MRS Proceedings 93 (1987). http://dx.doi.org/10.1557/proc-93-323.

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ABSTRACTA low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphide. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen Impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by x-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on the III–V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

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Smart, J. A., E. M. Chumbes, L. N. Srivatsa, Y. H. Lo, and J. R. Shealy. "Flow Modulation Epitaxial Lateral Overgrowth Of Gallium Nitride On Masked 6H-Silicon Carbide And Sapphire Surfaces." MRS Proceedings 512 (1998). http://dx.doi.org/10.1557/proc-512-59.

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ABSTRACTSelective Area Flow Modulation Epitaxial growth of GaN is carried out in a low pressure Organometallic Vapor Phase Epitaxy reactor. This process is known to enhance reactant surface migration lengths on patterned group III-arsenide and phosphide growth surfaces. With this process, high quality laterally overgrown GaN epitaxial materials result. Under the ammonia rich growth conditions used, enhanced migration (by flux modulation) across masked regions of the substrate has not been observed. The mask materials were silicon dioxide and silicon nitride, both deposited on GaN/AlGaN buffer structures on sapphire and SiC substrates. Window stripes were patterned parallel and perpendicular to the (1100) crystal directions to observe the orientation dependence of the lateral growth rate. Structures exhibited heights above the mask surface as large as 30 microns and atomically smooth surfaces. With a periodic array of stripe window openings in the mask, planarized laterally overgrown surfaces are achieved after roughly 4 microns of overgrowth. Chemical assisted ion beam etching with chlorine gas was used to delineate defects in the selectively grown layers. Additional evidence on the defect reduction is given by Atomic Force and Scanning Transmission Electron Microscopies.

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Piner, E. L., F. G. McIntosh, J. C. Roberts, K. S. Boutros, M. E. Aumer, V. A. Joshkin, N. A. El-Masry, S. M. Bedair, and S. X. Liu. "A Model for Indium Incorporation in the Growth of InGaN Films." MRS Proceedings 449 (1996). http://dx.doi.org/10.1557/proc-449-85.

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ABSTRACTThe development of high quality indium based III-nitride compounds is lagging behind the corresponding aluminum and gallium based compounds. Potential problems confronting the growth of epitaxial and double heterostructure InGaN will be discussed. A mass balance model is presented describing the competing reaction pathways occurring during the growth of indium containing compounds. Atomic layer epitaxy and metalorganic chemical vapor deposition grown InGaN films will be used to explain this model. Also, the growth parameters leading to the attainment of high InN percentages, reduced indium metal formation, and improved structural and optical properties of indium containing nitrides will be discussed.

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Tansley, T. L., and R. J. Egan. "Optical and Electronic Properties of the Nitrides of Indium, Gallium and Aluminium and the Influence of Native Defects." MRS Proceedings 242 (1992). http://dx.doi.org/10.1557/proc-242-395.

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ABSTRACTThe nitrides of Al, Ga and In are III-V compound semiconductors with properties more closely akin to those of the II-VI system and applications problems of similar type. All three have wide, direct band gaps and relatively light, therefore mobile, electrons. Less encouragingly, native point defects appear to play a significant role in both optical and electronic properties.Both experiment and theory point to a triplet of donor states associated with the nitrogen vacancy, with deep compensating centres deriving from antisite defects. The ionic radius of the metal then seems to determine the conductivity of as-grown material, indium is reluctant to occupy nitrogen sites while aluminium does so readily and gallium is equivocal. Thus the upper donor level of InN is not depleted and n-type behaviour is always observed, the equivalent level in AIN is always overcompensated and the remaining donor levels are too deep to contribute free electrons at normal temperatures so that the material is consistently insulating. GaN may be n-type or semi-insulating since compensation ratios either side of unity appear to be possible, depending on the method of growth.In this paper we review the evidence, both optical and electrical, for the existence, nature and energetic location of the four basic point defects in each nitride, noting in particular that all four broad luminescence bands in GaN:Zn can be accounted for by the presence of nitrogen on gallium sites and of nitrogen vacancies.

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"X-ray structure investigation of fluoride complexes of indium(III) and gallium(III) MIIAF5·7H2O (M = Co, Ni, Cu, Zn, Cd; A = In, Ga)." Журнал структурной химии 59, no. 6 (2018). http://dx.doi.org/10.26902/jsc20180621.

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Jumaah, Omar Dhannoon, and Yogesh Jaluria. "Influence of Precursor Concentration on Crystalline Quality of GaN Thin Films Grown on a Sapphire Wafer." Journal of Manufacturing Science and Engineering 143, no. 11 (May 7, 2021). http://dx.doi.org/10.1115/1.4050825.

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Abstract Chemical vapor deposition (CVD), which involves chemical reactions in gases for deposition on a heated surface, is an extensively used manufacturing technique for obtaining thin films of materials like silicon, graphene, silicon carbide, aluminum nitride, and gallium nitride (GaN). The process is driven by heat and mass transfer, fluid flow, and chemical reactions in the gases and at the surface. GaN is one of the most promising materials for manufacturing optical and electronic devices. However, the reliability and durability of the GaN-based devices depend on the crystalline quality of the thin films used. In this study, the epitaxial growth of GaN thin films on sapphire (Al2O3) wafers is carried out in a vertical rotating disk metalorganic chemical vapor deposition (MOCVD) system. Epitaxial growth refers to the process of growing a crystal of a particular orientation on the top of another crystal, with the orientation being determined by the underlying crystal. MOCVD reactors are CVD systems that use metalorganic compounds that consist of metal and organic ligands, leading to materials like GaAs, AlN, InN, and GaN. The quality of the thin films is largely determined by the choice of operating conditions such as the flowrate, surface temperature, and concentration of the metalorganic precursors that decompose due to heat in the reactor, react, and deposit the desired material on the surface of a wafer or a heated susceptor. In this experimental study, the crystalline quality and surface morphology of GaN thin films are evaluated using atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. The correlation between the crystalline quality of GaN thin films and the flowrate of the precursors is examined in detail on the basis of an evaluation of the dislocation density. The results indicate that a low concentration (V/III) ratio, where V and III refer to elements in the fifth and third groups of the periodic table, is beneficial for obtaining a high deposition rate since a low value of this ratio implies a high precursor concentration. However, it negatively affects the crystalline quality of the thin film. Similarly, high V/III ratios lead to low deposition rates and better crystalline quality, indicating the need to optimize the process.

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Journal articles on the topic 'Gallium III ion'

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