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Dissertations / Theses on the topic 'Magnetron Co-Sputtering'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Gomes, Matheus Gamino. "Deposição de nano-grãos de Co em uma matriz de CoO/Al2O3 por Magnetron Sputtering." Universidade Federal de Santa Maria, 2007. http://repositorio.ufsm.br/handle/1/9175.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>Granular magnetic systems can be composed by magnetic particles or clusters with size of some nanometers. These magnetic nanoparticles present different magnetic order phases, as superparamagnetic, and they can be embedded in both, metallic or insulating matrix. These systems present several phenomena such as the giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and Coulomb blockade. That phenomena use to disappear when a small termal fluctuation is high enough to reverse the magnetization of the clusters leading the lo

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2

Schmidt, Rüdiger Matti [Verfasser], Matthias [Akademischer Betreuer] Wuttig, and P. [Akademischer Betreuer] Kelly. "Exploring the potential of serial magnetron co-sputtering / Rüdiger Matti Schmidt ; Matthias Wuttig, P. Kelly." Aachen : Universitätsbibliothek der RWTH Aachen, 2015. http://d-nb.info/1127590693/34.

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3

Aijaz, Asim. "Design and Characterisation of A SynchronousCo-Axuak Double Magnetron Sputtering System." Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19924.

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<p>High power impulse magnetron sputtering (HiPIMS) is a novel pulsed power technique. In HiPIMS, high power pulses are applied to the target for short duration with a low duty factor. It provides a high degree of ionization of the sputtered material (in some cases up to 90%) and a high plasma density (10<sup>19</sup> m<sup>-3</sup>) which results in densification of the grown films. Recently a large side-transport of the sputtered material has been discovered, meaning that the sputtered material is transported radially outwards, parallel to the cathode surface. In this research, we use this e

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4

Lai, Chung-Chuan. "Growth and Phase Stability of Titanium Aluminum Nitride Deposited by High Power Impulse Magnetron Sputtering." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-68922.

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In this work, we investigate the relation between the diffusion behavior of Ti1-xAlxN at elevated temperatures and the microstructure. Thinfilm samples are synthesized by reactive co-sputtering with two cathodes. One cathode equipped with Ti target is connected to a highpower impulse magnetron sputtering (HiPIMS) power supply, and the other cathode equipped with Al target is operated with a directcurrent power source. The spinodal decomposition of cubic metastable Ti1-xAlxN controlled by thermally activated diffusion is observe fordiffusion behavior. Various HiPIMS pulsing frequencies are used

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5

Dogan, Ilker. "Fabrication And Characterization Of Aluminum Oxide And Silicon/aluminum Oxide Films With Si Nanocrystals Formed By Magnetron Co-sputtering Technique." Master's thesis, METU, 2008. http://etd.lib.metu.edu.tr/upload/12609687/index.pdf.

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DC and RF magnetron co-sputtering techniques are one of the most suitable techniques in fabrication of thin films with different compositions. In this work, Al2O3 and Si/Al2O3 thin films were fabricated by using magnetron co-sputtering technique. For Al2O3 films, the stoichiometric, optical and crystallographic analyses were performed. For Si contained Al2O3 films, the formation conditions of Si nanocrystals were investigated. To do so, these thin films were sputtered on Si (100) substrates. Post annealing was done in order to clarify the evolution of Al2O3 matrix and Si nanocrystals at differ

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6

Chamorro, Coral William. "Microstructure, chemistry and optical properties in ZnO and ZnO-Au nanocomposite thin films grown by DC-reactive magnetron co-sputtering." Thesis, Université de Lorraine, 2014. http://www.theses.fr/2014LORR0253/document.

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Les matériaux composites peuvent présenter des propriétés qu'aucun des composants individuels ne présente. En outre, à l'échelle du nanomètre les nanocomposites peuvent présenter de nouvelles propriétés par rapport à l'état massif ou à des macrocomposites des mêmes composants en raison d’effets de confinement et d’effets quantiques liés à la taille. Les nanocomposites semi-conducteur/métal sont très intéressants en raison de leurs uniques propriétés catalytiques et opto-électroniques et la possibilité de les ajuster facilement. Ce travail de thèse étudie les interactions spécifiques et les pro

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7

Chamorro, Coral William Adolfo Verfasser], and Frank [Akademischer Betreuer] [Mücklich. "Microstructure, chemistry and optical properties in ZnO and ZnO-Au nanocomposite thin films grown by DC-reactive magnetron co-sputtering / William Adolfo Chamorro Coral ; Betreuer: Frank Mücklich." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2015. http://d-nb.info/1136608052/34.

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8

Gencer, Imer Arife. "Si Nanocrystals In Sic Matrix And Infrared Spectroscopy Of In A Dielecric Matrix." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/3/12611778/index.pdf.

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This study focuses on various aspects of nanocrystals embedded in a dielectric matrix. In the first part of this work, a new approach with the use of Fourier Transform Infrared spectroscopy (FTIR) in the nanocrystal analysis was developed and presented. Si and Ge nanocrystals embedded in SiO2 matrix were mainly studied. This new approach is based on the analysis of structural variations of SiO2 matrix during the formation of semiconductor nanocrystlas. It is shown that the chemical and structural variations of the host matrix are directly related to the precipitation of nanocrystals in it. Thi

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9

Mahadeva, Sreekanth. "Magnetism in Band Gap Engineered Sputtered MgxZn(1-x)O Thin Films." Doctoral thesis, KTH, Materialteknologi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122488.

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This dissertation presents a comprehensive study of the intrinsic room temperature ferromagnetism, RTFM, in technologically important thin films of ZnO, MgO, Mg@ZnO, the so-called d0–magnets that do not contain any intrinsic magnetic elements. We also present the first report on magnetism in Mn doped MgO films fabricated by dc magnetron sputtering. We have just published (April 2013 ‘on-line’) a state of the art review entitled ‘p-type ZnO Theory, growth, properties, and devices’ in the prestigious journal ‘Progress in Materials Science’, summarizing the recent advances of the studies on p-typ

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10

Xu, Ziwen. "Phase transformation and properties of magnetron co-sputtered GeSi thin films." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/hkuto/record/B39848772.

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11

Xu, Ziwen, and 徐子文. "Phase transformation and properties of magnetron co-sputtered GeSi thin films." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B39848772.

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12

Sun, Hui. "Synthèse par co-pulvérisation cathodique magnétron en condition réactive et caractérisation de revêtements d’oxydes conducteurs transparents à base de CuCrO2 de structure délafossite." Thesis, Belfort-Montbéliard, 2016. http://www.theses.fr/2016BELF0292/document.

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Les TCOs (Transparent Conductive Oxide) trouvent des applications dans de nombreux domaines s'étendant del'électrochromie au photovoltaique en passant par l'opto-électronique. Parmi les matériaux historiques, les TCOs detype n font l'objet d'une littérature abondante tandis que les TCO de type p sont quant à eux étudiés de façon plusconfidentielle mais commencent à susciter un engouement, notamment dans l'objectif de jonctions p-ntransparentes.Sur la base de la théorie de la méthode de modulation chimique de bande de valence, le composé CuCrO2 destructure délafossite est considéré comme un can

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13

Liu, MinCheng, and 劉敏成. "Electrochromic Carbon-Doped WO3 Films Prepared by DC Magnetron Co-Sputtering." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/95809499316352450355.

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碩士<br>明新科技大學<br>電子工程研究所<br>100<br>Abstract In this study, WO3C thin films were prepared on ITO glass substrates at room temperature by DC magnetron reactive co-sputtering deposition. The various rates of carbon–doped WO3 films were obtained by using different sputtering power for a graphite target. The relationship between microstructures and optical properties of WO3C thin films was investigated. The film thickness was decided by SEM micrographs of the cross-section morphology. The composition of the films was analyzed using an energy-dispersive X-ray spectrometer on a SEM. The rms surface

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14

Huang, Yen-Lin, and 黃彥霖. "Microstructure and Characteristics of Zinc Titanate Thin Films by Reactive Magnetron Co-sputtering." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/21007677406852390928.

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博士<br>國立中興大學<br>材料科學與工程學系所<br>102<br>The aim of this study is to prepare, characterize, and apply the zinc titanate thin films by reactive magnetron co-sputtering in Ar/O2 atmosphere. The effects of Zn : Ti atomic ratio and annealing temperature were studied on the crystalline behavior, dielectric, optical properties, and photocatalytic activity of zinc titanates thin films. The content of the thesis is divided into four sections. In the first section, the zinc titanate thin films were deposited on Si substrates to understand the influence of Ti content (28.26 to 75.56 %) and annealing tempera

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15

Cheng, Ho-Ming, and 鄭賀名. "Co-Doped ZnO Diluted Magnetic Semiconductor Thin Films Fabricated by RF Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/e3rc9n.

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碩士<br>國立臺北科技大學<br>光電工程系研究所<br>98<br>Diluted magnetic semiconductors can utilize charge and spin degrees of freedom of a single device and could be applied to the spintronics. By virtue of the wide-bandgap characteristic of ZnO and the large magnetic moment of Co in ZnO, Co-doped ZnO material is ideal for fabricating the diluted magnetic semiconductor. By using the instruments like XRD, SEM, and SQUID, we can examine the crystal structure, the surface morphology, and the magnetic behaviors of the deposited thin film respectively. We observed that as the grain size decreases, the measured hyst

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16

Wei-Hsiang, Lu, and 呂維祥. "Investigation of ZnO MOS Device with Magnetron Co-Sputtering SiO2-ZnO Nanocomposites Insulator Layer." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/26344659475871870384.

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碩士<br>國立成功大學<br>光電科學與工程學系<br>101<br>In the recent years many nanodots memories have been researched for the reliability of using it to replace floating gate memories. In many of the components of the nanodots, the metal parts of the nanodots has been used as the memory storage device and it is possible that it could become the new generation of main components for memory storage devices. The metal nanodots have a high density of states around Fermi level, adjustable work functions and is not easily affected by energy perturbation caused by carrier confinements. Hence could decrease the voltage

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17

Chang, Si-Shine, and 張仕祥. "Magentic Properties and Microstructure of Fe-Co-N Thin Films Prepared by RF Magnetron Sputtering." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/97320168706624880961.

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碩士<br>國立臺灣大學<br>材料科學與工程學研究所<br>85<br>ABSTERACT (Fe90Co10)100-x Nx ;(x=0~40) thin films were prepared by reactive RF magnetron sputtering. The flow rate ratio of nitrogen (N2/Ar+N2) in the system was controlled at 0~15 vol %. The films were post-annealed in hydrogen furnace between 200 and 400℃in order to get high moment structures and compositions. X-ray diffraction indicated that the structure of the films was nanocrystal for as-deposited films. TEM study and AES

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18

Wu, Tung-Lin, and 吳東霖. "Photoelectric characteristics of IZTO films for transparent conductive oxides prepared by magnetron co-sputtering system." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/41604312391523915663.

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碩士<br>元智大學<br>光電工程學系<br>104<br>The Zn-In-Sn-O (IZTO) composite films were co-sputtered on non-alkali glass substrate by dual gun magnetron sputtering system at substrate temperature 230℃, and their film structure and optoelectronic properties were in order to find better composite materials to replace ITO in optoelectronic applications. The ITO and ZnO targets were sputtered by DC and RF discharges, respectively, and the composition of the IZTO films was controlled by varying the RF power on the ZnO target from 0 W to 150 W. The results showed that the deposited IZTO films changed from cryst

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19

Chun-Hsi, Lai, and 賴俊羲. "The study of high dielectric (Ba,Sr)TiO3 thin film deposited by rf magnetron co-sputtering." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/41853847264183127018.

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碩士<br>中原大學<br>電子工程學系<br>87<br>This thesis is to study the fabrication process of (Ba,Sr)TiO3 (ie: BST) thin films by radio frequency co-sputtering. BST has attracted increasing interest for the application of capacitor cells in DRAMs because of the properties of high dielectric constant、low leakage current density and low dielectric loss. The paper is summarized as the following: Ch.1 There introduce the development of memory tersely and research of BST presently. Ch.2 There introduce about the theoretical background of dielectric materials and the

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20

Chang, Hung-Jen, and 張宏仁. "Characterization and preparation of p-type ZnO films by N and Al co-doping using magnetron sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/25313054032328572369.

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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>97<br>P-type ZnO films were fabricated at different temperatures from 300℃ to 500℃ by N and Al co-doping method with magnetron sputtering using a 99.99% ZnO target and a 99.99% Al target by RF and DC magnetron gun, respectively. Nitrogen source was produced from 99.999% N2 gas. Hall measurement was employed to determine the resistivity, mobility and carrier concentration. X-ray photoelectron spectroscopy analysis confirmed the presence of nitrogen and aluminum in the codoped films. Raman and Photoluminescence were used to characterize the optical properties. Ac

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21

Jhuang, He-Syun, and 莊和勳. "Fabrication and characterization of Ga, F co-doped zinc oxide thin films by radio-frequency magnetron sputtering." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/12073854773533777694.

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碩士<br>國立中興大學<br>光電工程研究所<br>103<br>In this study, gallium and fluorine co-doped zinc oxide (GFZO) thin films were deposited on Corning EagleXG glass with RF magnetron sputtering system. We used ZnO targets containing 3wt% Ga2O3, named GZO. Then, we introduced doping gas tetrafluoromethane (CF4) into the chamber during sputtering process. This experiments use Ar as a background gas and vary CF4/Ar flow ratio. Base pressure, working pressure, plasma power, film thickness, and working distance were fixed at 5 × 10-6 Torr, 5 × 10-3 Torr, 100 W, 330 nm and 8 cm. GFZO thin films with CF4/Ar 0.2%

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Lin, Chun-Chi, and 林俊旗. "Fabrication and characterization of Al, F co-doped zinc oxide thin films by radio-frequency magnetron sputtering." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/31055239459877889624.

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23

Hu, Ding-Chiang, and 胡定強. "Microstructure and Mechanical Properties of Zr-Cr/DLC Films with High Power Impulse Magnetron Co-Sputtering System." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/9t2q4j.

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碩士<br>龍華科技大學<br>機械工程系碩士班<br>107<br>Diamond-like carbon (DLC) structure with hard diamond bond (SP3, tetrahedral diamond carbon film), and graphite bond with lubrication function (SP2, hexagonal mesh structure), good mechanical , physical, optical and electrical properties, a wide range of applications. In this study, Ar is a sputtering gas, CH4 reaction gas, high-power pulsed magnetron sputtering, deposition of (Zr-Cr/DLC) film on glass and stainless steel (SUS 304) substrate, respectively, to explore different CH4/(Ar+ CH4) flow ratio (8, 12, 16, 20, 24%), Zr-Cr power (90/40, 120/70, 150/100,

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24

Yang, Tung-Hsin, and 楊東欣. "Fabrication and characterization of hydrogenated Al,F co-doped zinc oxide thin films by radio-frequency magnetron sputtering." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/5y5dy4.

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碩士<br>國立中興大學<br>電機工程學系所<br>101<br>ZnO-based transparent conducting thin films have been widely studied in opto-electronic field. In this research, Al, F co-doped zinc oxide targets with four different Al2O3 contents (0, 1, 2, 4 wt.%), named FZO, A1FZO, A2FZO and A4FZO, and five different hydrogen flow ratios (H2 / Ar + H2 = 0, 3, 5, 7, 10% ) in the sputtering atmosphere were used to prepared hydrogenated Al, F co-doped zinc oxide thin films by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the prepared thin films were inves

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Lin, Zhe Yuan, and 林遠哲. "Processing and Characteristics Studies of In-Ga-Zn-O Thin Film Deposited by using Magnetron Co-sputtering Method." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/98894218805798674995.

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碩士<br>明新科技大學<br>電子工程系碩士班<br>103<br>Indium-gallium-zinc oxide (In2O3:Ga2O3:ZnO, IGZO) films were deposited on glass substrates at room temperature by using triple targets co-sputtering with two radio-frequency (RF) (In2O3, Ga2O3, ZnO) and one direct-current (DC) (Zn, In2O3) magnetrons. After annealing IGZO films, the film thickness and optical constants of samples were measued by ellipsometer, and opitical transmittance and semiconductor’s electrical properties were measured by UV-Visible spectroscopy and Hall measurement, respectively. Film crystallinity, surface morphology, and compositional

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Chen, Shih-Wei, and 陳世偉. "Morphology Evolution of Co Thin Films during Deposition by DC Magnetron Sputtering and Their Applications for OME Process." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/34874910606785424657.

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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>91<br>The cobalt thin films are grown by D.C. magnetron sputtering as a function of the target-to-substrate distance, bias and power on both Si (100) and (111) substrates. The crystal structure and morphology of the thin films are characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and atomic force microscopy. It is found that the cobalt crystal structure can be varied from HCP to FCC by varying the target—to-substrate distance from 6 to 10 cm. The roughness and the preferred orientation of the thin films are great

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Kuang, Jian-Shiun, and 匡建勳. "The study of physical properties of Cu-doped ZnO films deposited by using a magnetron co-sputtering method." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/30886443762503072307.

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碩士<br>國立高雄大學<br>應用物理學系碩士班<br>99<br>We deposited two-series Zn1-xCuxO films, which are made on sapphire and glass substrates by using the RF-sputtering. And we controlled the Cu-doped concentrate between 0 % and 16 %. Zn1-xCuxO films are c-axis-oriented wurtzite structure, and we didn’t discover any Cu-metal or Cu-oxide signal. In our samples, Cu atoms do not play the produce-ferromagnetism or enhance-ferromagnetism role. The magnetic sources of Zn1-xCuxO films should be the defects of ZnO. And in the annealing samples, we observed the low-temperature superparamagnetism, which is caused by Cu-O

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Chu, Chih-Cheng, and 朱智誠. "On the structure and optoelectronic properties of Zr, Ti co-doped ZnO thin films prepared by magnetron sputtering." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/08828440382525475532.

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碩士<br>國立中央大學<br>材料科學與工程研究所<br>101<br>Transparent conductive Zr, Ti codoped ZnO (ZTZO) films were prepared on glass substrate by three-target magnetron sputtering system in this work. The glass substrate was heated to 200°C, and the working pressure in the chamber was at 5 × 10-2 Torr. In the process of sputtering, the pure Ti target was bombarded by direct current varying in the power at 10, 20 and 30, the pure ZnO target were bombarded by radio frequency power fixed at 150 W and the pure Zr target were bombarded by radio frequency varying in the power at 0, 25, 50, 60, 75 and 100W, After sput

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Homola, Petr. "Studium nových katalytických materiálů pro palivové články s polymerní membránou." Master's thesis, 2012. http://www.nusl.cz/ntk/nusl-308246.

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Title: Study of new catalytic materials for proton exchange membrane fuel cells Author: Petr Homola Department: Department of Surface and Plasma Science Supervisor: Prof. RNDr. Vladimír Matolín, DrSc. Abstract: Submitted thesis deals with study of thin layers based on platinum and cerium oxides in order to use them in fuel cells with polymer membrane (PEM- FC). A set of samples with different amount of platinum was prepared by means of magnetron sputtering. Samples were investigated by X - ray Photoelectron Spectroscopy (XPS) and results were confronted with sputtering parameters. It was found

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Pai, Kun-Che, and 白昆哲. "Characteristics of Gallium and Aluminum Co-doped ZnO Transparent Thin Films Deposited on PET Substrates by RF Magnetron Sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/83473761528208966090.

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碩士<br>逢甲大學<br>材料與製造工程所<br>98<br>The author reported that surface treatment for PET substrates by using corona discharge and Ga and Al co-doped ZnO (GAZO) thin films deposited on as-treatment PET substrates by RF magnetron sputtering. Characterization of PET substrates after corona discharge was carrier out by contact angle and laser scanning microscopy. Experimental results showed that surfaces of PET substrates were modified corona discharge, at a power of corona discharge of 3 kW and at a transmission speed of 2 m/min, would improve surface energy above 56 mN/m. Moreover, transparent and fle

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Yeh, Yun, and 葉昀. "Fabrication and Characteristics Analysis of Transparent Thin-Film Transistors with Oxide Semiconductors Prepared by using Magnetron Co-sputtering Method." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/85093138161459100925.

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碩士<br>明新科技大學<br>電子工程研究所<br>101<br>This study investigates effects of varying the processing parameters on the electrical and optical properties of IAZO (In2O3:Al2O3:ZnO) or IGZO (In2O3:Ga2O3:ZnO) films deposited on glass substrates. Semiconductor films were prepared by sputtering three targets simultaneously at room temperature using two radio-frequency (RF) (In2O3 and Al2O3 or Ga2O3) and one direct-current (DC) (Zn) magnetron co-sputtering system. Oxide thin film transistors (TFTs) were frabicated by using inverted staggered structure on a silicon wafer to investigate effects of various proce

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Lin, Yu-Tsung, and 林佑璁. "The physical properties of hydrogenated Co-doped ZnO thin films deposited at room temperature by RF-magnetron sputtering system." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/53851917823691684733.

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碩士<br>國立中山大學<br>物理學系研究所<br>100<br>The roles of hydrogen induced defects in pure ZnO has been studied extensively. However, in a transition metal, such as Co, doped ZnO thin films the effect of hydrogen in electric conduction and magnetic coupling is still unclear and needs further study. Recently model predicts that hydrogen can be a shallow donor as well as an agent to induce ferromagnetism coupling between two adjacent Co ions which substitute the Zn sites at room temperature in a ZnO sample with a high Co doping ratio. However, the experimental supports is rare. In this study, Co-doped(5

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Chen, Hui-chin, and 陳慧津. "Preparation and Properties of the Indium Zinc Oxide by Reactive Magnetron Co-sputtering using Indium and Zinc Metallic Targets." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/f9sjc9.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>95<br>Transparent conducting Indium Zinc Oxide (IZO) films were prepared on a cleaned Corning Eagle2000 glass substrate by a reactive magnetron co-sputtering. The IZO thin films are frequently deposited from ceramic targets, however, a cost reduction is expected if it is possible to use much less expensive metallic targets. Therefore, this study aims at preparing IZO thin films by carefully adjusting atomic ratios (Zn/(Zn+In) at.%) using Indium and Zinc metallic targets at various partial pressures and substrate temperatures. Electrical properties and optical pr

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Lu, Jo Ling, and 呂若菱. "Deposition of p-type Aluminum and Nitrogen Co-doped Zinc Oxide Transparent Conductive Thin Films by Reactive RF Magnetron Sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/89683812120939027212.

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碩士<br>長庚大學<br>化工與材料工程研究所<br>97<br>The objectives of this research are to prepare p-type transparent conductive aluminum-doped zinc oxide (AZO) thin films with excellent properties by adjusting volume ratio of reactive sputtering gas N2 and by using AZO ceramic targets. In addition, the effects of N2 reactive gas and the amount of alumina dopant in the AZO target as well as other sputtering parameters on the electrical, optical, and structural properties of AZO thin films was also investigated. The experimental results showed that all the AZO thin films deposited by RF reactive magnetron sp

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Yen-HuiLin and 林彥暉. "The Study of Nonvolatile Zinc-Oxide Thin-Film Transistor Flash Memory with Magnetron Co-Sputtering SiO2-ZnO Nanocomposites Storage Layer." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/12673484830428488125.

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碩士<br>國立成功大學<br>光電科學與工程學系<br>104<br>The purpose of this study is to investigate the nonvolatile Zinc-Oxide (ZnO) thin-film transistor (TFT) flash memory. The flash memory is divided into two categories, one is a device which embedded floating gate in the oxidation; the other is a charge-trapping device using a defect layer to catch charge. With amount of the trapping charge will alter the threshold voltage. The active layer of ZnO as the benefits of our selection is a growth once in internal cavity; simple process, large area manufacturing, low cost, and transistors have high o

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Kuo, Cheng-Lun, and 郭政倫. "Microstructure and Magnetic Properties of Fe-Co-Hf Based Soft Magnetic Thin Films Fabricated by Magnetron Sputtering for Radio-Frequency Applications." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/80200812390195864744.

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碩士<br>國立清華大學<br>材料科學工程學系<br>96<br>Soft magnetic thin films with high saturation magnetization and resistivity are of great interest in micro-inductor for the magnetic device application. In this study, amorphous Fe–Co–Hf–N thin films with a gradient concentration of Hf doping were fabricated by rf reactive magnetron sputtering. The evaluated magnetic properties and high-frequency characteristics were sensitive to the doping contents. A new technology was used to deposit a series Fe–Co–Hf–N thin films on which gradient concentration of Hf was present. By this new deposition technology, the film

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Chen, Mao-Shan, and 陳茂杉. "Mg, F co-doped zinc oxide thin films deposited by RF magnetron sputtering and their applicationto silicon thin film solar cells." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/w3gp7c.

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碩士<br>國立中興大學<br>電機工程學系所<br>106<br>ZnO-based transparent conducting thin films prepared by radio frequency (RF) magnetron sputtering have been widely used in various optoelectronic devices. In this study, a magnesium-fluorine co-doped zinc oxide film (MFZO) and a fluorine-doped zinc oxide film (FZO) were deposited on glass substrates by a RF magnetron sputtering system. The sputtering targets are with zinc oxide targets containing 3 mol% of MgF2 and ZnF2, respectively. Effects of substrate temperature, rapid thermal annealing (RTA) temperature and time were investigated on structural, surface m

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Mao, Min-Xian, and 毛敏憲. "Fabrication of Ga, Mg and F co-doped ZnO thin film by RF magnetron sputtering for Si thin film solar cell application." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/trxq4j.

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碩士<br>國立中興大學<br>光電工程研究所<br>107<br>In this study, gallium, magnesium and fluorine co-doped ZnO (GMFZO) films were prepared by ratio frequency (RF) magnetron sputtering with ceramics targets on Corning EagleXG glass. The surface morphology, structure, compositional, electrical and optical properties of the as-doped films as well as the argon plasma treatment ones were investigated. Based on the experiment results, we obtained the lowest resistivity 2.135×〖10〗^(-3) Ωcm, carrier concentration 3.131×〖10〗^20 cm^(-3), mobility 9.339 cm^2/Vs and average optical transmittance 92.8% for the GMFZO

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cai, cyuan-jian, and 蔡銓洊. "Preparation and Thermal Stability of the Cu3Ge film on Si Substrate by Reactive Magnetron Co-sputtering Using Copper and Germanium Metallic Targets." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/8yzpcw.

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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所<br>100<br>The copper-gemanide (Cu3Ge) formation process is enabled by magnetron co-sputter deposition process at room temperature. Whoever, follow annealed in an nitrogen atmosphere, the resistivity can be as low as 12 μΩcm, at 600℃ for 20 min, by the way on the Si substrate copper-gemanide also achieve 17μΩcm , and stable under the atmospheric environment tow week. which show a high thermal stability and antioxidant on Si substrates compared to Cu. We report a first observation of Cu3Ge structural in as-dep from XRD measurement. The thermal stability and cryst

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Tseng, Chun-An, and 曾群安. "Study on the structure, physical properties and surface characteristic of Al-doped and Fe, Al co-doped ZnO films prepared by RF magnetron sputtering." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/84043493002288852206.

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博士<br>國立中央大學<br>機械工程研究所<br>100<br>Al-doped ZnO and Fe, Al co-doped ZnO films were prepared on a glass substrate using a magnetron co-sputtering system with a zinc oxide target, a metallic aluminum target sputtered using radio frequency power, and a metallic iron target sputtered using direct current power. The Al-dopant and Fe-dopant concentration of the AZO films increased with increasing the power. The surface roughness of the films increased with increasing Al-content and Fe-content in both AZO and FAZO films. The average grain size of AZO and FAZO films increased with Al-content and Fe-con

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Wu, Yu Hsuan, and 吳羽軒. "Preparation of photoelectrochemical sea-water splitting using Cu-Sn-S thin films created via sulfurization of radio frequency magnetron co-sputtering of Cu-Sn metal precursors." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/dh6jwx.

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碩士<br>長庚大學<br>化工與材料工程學系<br>104<br>In this study, ternary copper-tin-sulfide (Cu-Sn-S) semiconductor thin films were deposited on the soda-lime glass and indium-tin-oxide (ITO) coated glass substrates by using the sulfurization of radio frequency magnetron co-sputtering of Cu-Sn metal precursors. The effect of the [Cu]/[Cu+Sn] on the structural, and photoelectrochemical properties of the Cu-Sn-S samples were examined. First, we discussed the temperature for the pre-annealing, and the effect of temperature profile of sulfurization process on the structural, and physical properties of the Cu-Sn-S

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Lo, Chen Yang, and 羅振洋. "Deposition and Electrical Conductive Mechanism of p-type Aluminum and Nitrogen Co-doped Zinc Oxide TransparentConductive Thin Films by Reactive RF Magnetron Sputtering with AZO Ceramic Target." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/09624050290352501771.

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碩士<br>長庚大學<br>化工與材料工程學系<br>98<br>p-type nitrogen-aluminum co-doped zinc oxide thin films were deposited on glass substrates by radio frequency reactive magnetron sputtering using aluminum-doped zinc oxide (AZO) ceramic target (3.7 wt% Al2O3) and different nitrogen-containing reactive gases (N2 and N2O). In addition, the effects of sputtering parameters (reactive gas ratio, substrate temperature, RF power, and working pressure, etc.) on the characteristics (including structure, electronic and optical properties) of AZO thin film were also investigated. Using N2 as reactive gas, p-type nitr

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Παππάς, Σπυρίδων. "Παρασκευή με τη μέθοδο sputtering, χαρακτηρισμός και ιδιότητες λεπτών μαγνητικών υμενίων τεχνολογικού ενδιαφέροντος". Thesis, 2008. http://nemertes.lis.upatras.gr/jspui/handle/10889/1289.

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Το θέμα αυτής της διπλωματικής εργασίας είναι η παρασκευή με τη μέθοδο sputtering και ο χαρακτηρισμός μαγνητικών λεπτών υμενίων. Στo πρώτο κεφάλαιο, που αποτελεί και την εισαγωγή, γίνεται μια αναφορά στη τεχνολογία των λεπτών υμενίων και δίνεται το στοιχειώδες θεωρητικό υπόβαθρο των τεχνικών ανάπτυξης αυτών. Στο δεύτερο κεφάλαιο παρουσιάζεται η διάταξη sputtering που χρησιμοποιήθηκε για την ανάπτυξη των μαγνητικών υμενίων και δίνονται τα αποτελέσματα της βαθμονόμησης ενός μετρητικού πάχους υψηλής ακρίβειας. Το τρίτο κεφάλαιο αναφέρεται στην κατασκευή και πιστοποίηση μιας πλήρως αυτοματοπ

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Lalande, Émile. "Synthèse de couches optiques par co-dépôt pour les miroirs de LIGO." Thesis, 2021. http://hdl.handle.net/1866/25493.

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En 2015, le Laser Interferometer Gravitational-Wave Observatory (LIGO) a observé pour la première fois des ondes gravitationnelles générées par la fusion de deux trous noirs. Cette observation résulte de 40 ans d’efforts afin de réduire au minimum les sources de bruit qui affectent l’interféromètre. À ce jour, la sensibilité de LIGO, dans son domaine de fréquence le plus sensible, est limitée par la granularité de la lumière d’une part et, d’autre part, par un phénomène de fluctuations thermiques résultat de la dissipation mécanique dans les couches minces qui constituent ses miroirs, en

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