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Journal articles on the topic 'Magnetron Co-Sputtering'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Xie, Jian Sheng, Jin Hua Li, and Ping Luan. "Property Comparison of CuInSi Films Prepared by Multilayer Synthesized and Magnetron Co-Sputtering." Applied Mechanics and Materials 110-116 (October 2011): 3755–61. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.3755.

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Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by magnetron co-sputtering method and multilayer synthesized method respectively,and followed by annealing in N2 atmosphere at different temperatures. The structure of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at about 2θ=42.308°,meanwhile,there are In2O3 peak and other peaks in the XRD patterns of films. The morphology of the film surface was studied by SEM. The SEM

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2

Bai, Xiu Qin, and Jian Li. "Study on Low Temperature Deposition of TiN Films and their Tribological Properties." Advanced Materials Research 189-193 (February 2011): 925–30. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.925.

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The low temperature deposition principle of magnetron sputtering was discussed. Reactive magnetron sputtering technique was used to gain titanium nitride (TiN) thin films on W18Cr4V high-speed steel substrates at low temperature. A series of experiments had been conducted to study the properties of TiN films. The experimental results showed that at the low temperature(<140 °C), magnetic sputtering can be used for the deposition of TiN film with compact, uniform and high nano-hardness, and their tribological properties were excellent, which co-determined by the film structure of low temperat

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3

Tranca, Denis E., Arcadie Sobetkii, Radu Hristu, et al. "Structural and Mechanical Properties of CrN Thin Films Deposited on Si Substrate by Using Magnetron Techniques." Coatings 13, no. 2 (2023): 219. http://dx.doi.org/10.3390/coatings13020219.

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Chromium nitride thin films are known for their good mechanical properties. We present the characteristics of ultrathin chromium nitride films under 400 nm thickness deposited on silicon substrates by direct current and high-power impulse magnetron sputtering techniques. The methods of investigation of the CrN films were scanning electron microscopy, atomic force microscopy, and nanoindentation. Qualitative and quantitative analyses were performed using AFM and SEM images by fractal dimension, surface roughness and gray-level co-occurrence matrix methods. Our results show that using magnetron

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4

Strnad, G., D. Biro, and I. Vida-Simiti. "Contributions to Processing of Self-Lubricated, Nanocomposite Wear Resistant Coatings by Reactive UM Magnetron Co-Sputtering." Advanced Materials Research 23 (October 2007): 197–200. http://dx.doi.org/10.4028/www.scientific.net/amr.23.197.

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Recently a great deal of attention has been devoted to sputtering technology for nanostructured coatings. Wear resistant nanocomposite coatings are very promising materials, which can be easily scaled up for industrial production. Therefore, reactive magnetron sputtering of alloy targets or co-sputtering of elemental metal targets are now intensively investigated. Present paper presents some results of our research work for optimization of tribological properties by definition of selected parameters for reactive sputtering process conditions of self-lubricated carbon doped TiAlN coating. Tailo

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5

Yang, Tim, Z. Q. Wang, Makoto Kohda, Takeshi Seki, Koki Takanashi, and Junsaku Nitta. "Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method." Key Engineering Materials 616 (June 2014): 247–51. http://dx.doi.org/10.4028/www.scientific.net/kem.616.247.

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We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF

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6

Liu, Zhuang, Lin Zhu, Jing Lin, and Zhi Hui Sun. "Gas Barrier Properties of SiO_X Films Deposited by RF Magnetron Co-Sputtering." Advanced Materials Research 284-286 (July 2011): 48–52. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.48.

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SiOx barrier films were deposited on poly (ethylene terephthalate) (PET) by radio frequency (RF) magnetron co-sputtering with double targets. The films deposited by co-sputtering were denser and smoother because different energy particles sputtering from double targets grew small islands to weaken shadowing effect which greatly reduce the interval gaps. The water vapor and oxygen transmission of SiOx films deposited by co-sputtering decreased to 0.31 cc/m2/day, 0.27 g/m2/24h respectively.

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7

Zhu, Guo, Baijun Xiao, Ganxin Chen, and Zhiyin Gan. "Study on the Deposition Uniformity of Triple-Target Magnetron Co-Sputtering System: Numerical Simulation and Experiment." Materials 15, no. 21 (2022): 7770. http://dx.doi.org/10.3390/ma15217770.

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The uniformity of magnetron-sputtered films can be evaluated using an analytical model whose key parameters, such as included angle cosine and distance between infinitesimal elements, are so far calculated based on targets-substrate geometric relation. This existing computation scheme is not applicable in a triple-target magnetron co-sputtering system with complex targets-substrate geometric relation. In this work, a computation method was proposed to calculate the deposition uniformity of a triple-target magnetron co-sputtering system based on the analytical model. In this method, the coordin

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8

Demczyk, B. G., and H. W. Estry. "X-ray photoelectron spectroscopy of annealed Co-Cr films." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 750–51. http://dx.doi.org/10.1017/s0424820100088063.

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Co-Cr thin films have been studied extensively as leading candidates for perpendicular recording media. The enhancement of the magnetic properties (saturation magnetization and coercivity) in rfsputtered Co-Cr films has been reported by several investigators. Concurrent work has revealed similar improvements in the magnetic properties of annealed Co-Cr films produced by magnetron sputtering. Honda et al. propose that compositional inhomogeneities in annealed films give rise to these properties changes. In this work, we have employed X-ray photoelectron spectroscopy (XPS) to investigate composi

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9

Liu, Jun, Zhi Gang Chen, Kai Bi, and Yue Min Wang. "Evaluation on Structure and Tribological Properties of Carbon Nitride Films Deposited on YG8 Carbide Alloy Substrates." Key Engineering Materials 492 (September 2011): 80–84. http://dx.doi.org/10.4028/www.scientific.net/kem.492.80.

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CNx films were deposited on YG8 carbide alloy (WC+8%Co) substrates by DC or RF magnetron sputtering. The composition, bonding state, adhesion, and tribological behavior of CNx films were researched. X-ray Photoelectron spectroscopy results showed that C-N, C=N and C≡N bond existed in CNx films. RF magnetron sputtering is in favor of the bonding of C and N, the adhesion and the wear resistance of CNx films. DC magnetron sputtering is in favor of lubricating ability of CNx films. Substrate bias has some effect on the bonding of C and N, the adhesion of the films, decrease of adhesive wear and th

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10

Xing, Zhuo, Hengyi Wu, Liang Wu, et al. "A multifunctional vanadium-doped cobalt oxide layer on silicon photoanodes for efficient and stable photoelectrochemical water oxidation." Journal of Materials Chemistry A 6, no. 42 (2018): 21167–77. http://dx.doi.org/10.1039/c8ta07552b.

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11

Ju, Hai Lang, Xiao Bai Chen, Ci Zhao, et al. "The Study on Magnetron Sputtering Rate of Metal Targets." Advanced Materials Research 926-930 (May 2014): 371–74. http://dx.doi.org/10.4028/www.scientific.net/amr.926-930.371.

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The sputtering rate of Pt, Au, Fe and Co targets was researched and they were 0.059 nm/s, 0.076 nm/s, 0.050 nm/s, and 0.030nm/s respectively. A series of magnetic multilayers were prepared using the calibrated rate and the anomalous hall effect of the samples were tested, and Hall curve was in line with expectations. The sputtering rate of Pt, Au, Fe and Co targets was appropriate for sample preparation. Suitable sputtering rate play a decisive role in sample preparation.

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12

Shalygina, Elena E., Elena A. Gan’shina, Anna M. Kharlamova, Aleksander N. Mukhin, Galina V. Kurlyandskaya, and Andrey V. Svalov. "The Influence of Si on Magnetic and Magneto-Optical Properties of Co/Si/Co Thin-Film Systems." Solid State Phenomena 233-234 (July 2015): 653–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.233-234.653.

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The magnetic and magneto-optical properties of the Co/Si/Co thin-film samples obtained by magnetron sputtering were investigated employing magnetooptical techniques. The thickness of the Co layers was equal to 5 nm, and Si layer thickness varied in the interval of 0.2 to 3.2 nm. The magnetic saturation field of the samples under study was found to oscillate in the magnitude with the change of the Si layer thickness. This result was explained by structural features of the Co/Si/Co multilayers and the presence of the antiferromagnetic exchange coupling between magnetic layers via the silicon int

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13

Li, Feng, Ping Fan, Jing Ting Luo, Zhuang Hao Zheng, Guang Xing Liang та Ying Zhong. "Thermoelectric Properties of β-Zn₄Sb₃ Thin Films Deposited on Polyimide Flexible Substrate". Materials Science Forum 847 (березень 2016): 166–70. http://dx.doi.org/10.4028/www.scientific.net/msf.847.166.

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Due to the high-performance in the medium temperature application, β-Zn4Sb3 thermoelectric material has been received much attention. It is found that low dimensional thin film can improve the thermoelectric properties of materials by quantum local area effect and interface effect in recent years. In this paper, the β-Zn4Sb3 thin film was prepared on polyimide flexible substrate by DC magnetron co-sputtering method. The results showed that the thin film exhibited predominately ZnSb phases when the thin film was prepared by DC magnetron sputtering using Zn4Sb3 alloy target. It is suggested that

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14

Волочаев, М. Н., С. В. Комогорцев, В. Г. Мягков та ін. "Структурные и магнитные характеристики однослойных и многослойных наногранулированных пленок Co-Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, полученных методом твердофазного синтеза". Физика твердого тела 60, № 7 (2018): 1409. http://dx.doi.org/10.21883/ftt.2018.07.46132.025.

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AbstractThe results of structural and magnetic investigations of nanogranular Co–Al_2O_3 films formed from Co_3O_4/Al thin-film layered structures upon vacuum annealing are reported. The Co_3O_4/Al films have been obtained by sequential reactive magnetron sputtering of a metallic cobalt target in a medium consisting of the Ar + O_2 gas mixture and magnetron sputtering of an aluminum target in the pure argon atmosphere. It is shown that such a technique makes it possible to obtain nanogranular Co–Al_2O_3 single- and multilayer thin films with a well-controlled size of magnetic grains and their

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15

Zhang, Bo. "Research on Equipment of Magnetron Sputtering and Deposition of ZnO Films." Advances in Engineering Technology Research 8, no. 1 (2023): 470. http://dx.doi.org/10.56028/aetr.8.1.470.2023.

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The parts of magnetron sputtering system were given in the paper. Meanwhile, we analyzed the working theory of magnetron sputtering. After pure zinc oxide (ZnO) film was grown, N-doped films was Prepared in NH3-O2-Ar atmosphere using zinc as a target, and Al-doped and N+Al codoped ZnO films were grown by co-sputtering technique using zinc and aluminum as targets. AFM showed the crystal quality of the Films. The results of experiment demonstrate that high-quality films have been achieved by this technique, and research on ZnO films can be done by the equipment.

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16

Paladini, M., V. Godinho, G. M. Arzac, M. C. Jiménez de Haro, A. M. Beltrán, and A. Fernández. "Tailor-made preparation of Co–C, Co–B, and Co catalytic thin films using magnetron sputtering: insights into structure–composition and activation effects for catalyzed NaBH4 hydrolysis." RSC Advances 6, no. 110 (2016): 108611–20. http://dx.doi.org/10.1039/c6ra23171c.

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The magnetron sputtering (MS) methodology is a powerful tool for tailor-made fabrication of Co-based thin film catalysts with controlled microstructures and compositions for sodium borohydride (SBH) hydrolysis.

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17

Luo, Shan Shan, Wen Kui Li, and Ze Hua Zhou. "Preparation of N Doped ZnO Films by Magnetron Sputtering." Advanced Materials Research 197-198 (February 2011): 348–51. http://dx.doi.org/10.4028/www.scientific.net/amr.197-198.348.

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N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

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18

Kubart, T., R. M. Schmidt, M. Austgen, et al. "Modelling of sputtering yield amplification in serial reactive magnetron co-sputtering." Surface and Coatings Technology 206, no. 24 (2012): 5055–59. http://dx.doi.org/10.1016/j.surfcoat.2012.06.005.

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19

Gogova, D., V. S. Olsen, C. Bazioti, et al. "High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates." CrystEngComm 22, no. 38 (2020): 6268–74. http://dx.doi.org/10.1039/d0ce00861c.

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20

Xie, Jian Sheng, Ping Luan, and Jin Hua Li. "Multilayer Synthesized CuInSi Composite Film by Magnetron Sputtering." Advanced Materials Research 383-390 (November 2011): 2770–73. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.2770.

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Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of CuInSi nanocomposite films was detected by X-ray diffraction (XRD), the peak of main crystal phase is at 2θ=42.180°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, differed from the needle shape which was the morphology of the CuInSi film prepared by magnetron co-sputtering.

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21

Chen, Tian Bao, Ping Fan, Zhuang Hao Zheng, et al. "Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering." Advanced Materials Research 194-196 (February 2011): 2400–2403. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2400.

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Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 μV/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 °C, the electrical resistivity and Seebeck coefficient of the film are 6.67x104 S/m and 119 μV/K. The power f

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22

Gu, Mingqing, Yuanjian Zhang, Tian Ma, and Xianmeng Zhang. "Effect of Reactive Magnetron Co-Sputtering on the Microstructures and Optical Characteristics of TiAlN Coating." Journal of Nanoelectronics and Optoelectronics 19, no. 9 (2024): 892–98. http://dx.doi.org/10.1166/jno.2024.3647.

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The wide application of magnetron sputtering technology and the increase of infrared sensor market demand, many scholars began to carry out in-depth research on the optical properties of TiAlN coatings developed by the magnetron sputtering method. In this work, reactive magnetron sputtering technology was used to prepare TiAlN light absorption coatings on Cu substrates. By adjusting the proportion of reaction gas N2 flow and the working pressure of reactive magnetron sputtering, the variation pattern of TiAlN coatings was studied, and the coating with the optimal light absorption performance w

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23

Li, Qin, Yanhuai Li, Leiwen Gao, Fei Ma, Zhongxiao Song, and Kewei Xu. "Ru doping enhanced resistive switching behavior in InGaZnO thin films." RSC Advances 6, no. 48 (2016): 42347–52. http://dx.doi.org/10.1039/c6ra02174c.

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24

Sánchez, Olga, and Manuel Hernández-Vélez. "ZnOTe Compounds Grown by DC-Magnetron Co-Sputtering." Coatings 11, no. 5 (2021): 570. http://dx.doi.org/10.3390/coatings11050570.

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ZnOTe compounds were grown by DC magnetron cosputtering from pure Tellurium (Te) and Zinc (Zn) cathodes in O2/Ar atmosphere. The applied power on the Zn target was constant equal to 100 W, while the one applied on the Te target took two values, i.e., 5 W and 10 W. Thus, two sample series were obtained in which the variable parameter was the distance from the Te targets to the substrate. Sample compositions were determined by Rutherford Backscattering Spectroscopy (RBS) experiments. Structural analysis was done using X-Ray diffraction (XRD) spectrometry and the growth of the hexagonal w-ZnO pha

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25

Xie, Jian Sheng, Jin Hua Li, and Ping Luan. "Thin CuInSi Film Deposited by Magnetron Co-Sputtering." Advanced Materials Research 433-440 (January 2012): 302–5. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.302.

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Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric aut

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26

Hong, M., R. B. van Dover, J. M. Vandenberg, and D. D. Bacon. "CoCr thin film prepared by magnetron Co-sputtering." Journal of Magnetism and Magnetic Materials 54-57 (February 1986): 1585–87. http://dx.doi.org/10.1016/0304-8853(86)90935-2.

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27

Rogachev, N. A., V. Šmíd, J. J. Mareš, and J. Krištofik. "Amorphous nickel silicides prepared by magnetron co-sputtering." Journal of Non-Crystalline Solids 97-98 (December 1987): 955–58. http://dx.doi.org/10.1016/0022-3093(87)90230-4.

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28

Kamata, Tomoyuki, Michinori Sumimoto, Shunsuke Shiba, Ryoji Kurita, Osamu Niwa, and Dai Kato. "Increased electrode activity during geosmin oxidation provided by Pt nanoparticle-embedded nanocarbon film." Nanoscale 11, no. 18 (2019): 8845–54. http://dx.doi.org/10.1039/c9nr00793h.

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29

Hatzikraniotis, Euripides. "Formation of Mg₂Si/MgO Nano-Composites Prepared by Dual Cathode Magnetron Sputtering." Journal of Nano Research 17 (February 2012): 175–83. http://dx.doi.org/10.4028/www.scientific.net/jnanor.17.175.

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In this Work, Mg2si/MgO Nano-Composites Were Prepared by Co-Sputtering of Mg and Si Targets on Si {100} Substrates Using Dual Cathode Magnetron Sputtering. Films Were, Subsequently, Annealed at 380°C and 500°C for 4 Hours in Ar Gas Atmosphere. Various Mg/Si Sputtering Power Ratios Have Been Examined. Grown Films Were Characterized by XRD, SEM/EDS, and IR Reflectivity Measurements.

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30

Mounasamy, Veena, Ganesh Kumar Mani, Dhivya Ponnusamy, Kazuyoshi Tsuchiya, Arun K. Prasad, and Sridharan Madanagurusamy. "Network mixed metal oxide (V4+ and Ti4+) nanostructures as potential material for the detection of trimethylamine." New Journal of Chemistry 43, no. 28 (2019): 11069–81. http://dx.doi.org/10.1039/c9nj00727j.

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31

Abuín, M., L. Pérez, A. Mascaraque, and M. Maicas. "Tuning the magnetic properties of FeCo by pulsed DC magnetron sputtering." CrystEngComm 16, no. 40 (2014): 9528–33. http://dx.doi.org/10.1039/c4ce01112k.

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32

Zhang, Qixing, Tiantian Li, Jingshan Luo, et al. "Ti/Co-S catalyst covered amorphous Si-based photocathodes with high photovoltage for the HER in non-acid environments." Journal of Materials Chemistry A 6, no. 3 (2018): 811–16. http://dx.doi.org/10.1039/c7ta09569d.

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33

Chang, Li-Chun, Yu-Zhe Zheng, and Yung-I. Chen. "Mechanical Properties of Zr–Si–N Films Fabricated through HiPIMS/RFMS Co-Sputtering." Coatings 8, no. 8 (2018): 263. http://dx.doi.org/10.3390/coatings8080263.

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Zr–Si–N films were fabricated through the co-deposition of high-power impulse magnetron sputtering (HiPIMS) and radio-frequency magnetron sputtering (RFMS). The mechanical properties of the films fabricated using various nitrogen flow rates and radio-frequency powers were investigated. The HiPIMS/RFMS co-sputtered Zr–Si–N films were under-stoichiometric. These films with Si content of less than 9 at.%, and N content of less than 43 at.% displayed a face-centered cubic structure. The films’ hardness and Young’s modulus exhibited an evident relationship to their compressive residual stresses. Th

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34

Vallauri, D., S. Grassini, Bruno DeBenedetti, and R. Alexandre. "Fabrication and Characterisation of Nanostructured Coatings by Magnetron Sputtering for Wear Resistant Applications." Materials Science Forum 604-605 (October 2008): 3–12. http://dx.doi.org/10.4028/www.scientific.net/msf.604-605.3.

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Magnetron sputtering is a powerful process for the production of thin films and coatings employed for the surface modification of tools and engineering components in various industrial sectors. Nanostructured coatings for multifunctional applications were deposited by means of magnetron sputtering by adjusting the experimental parameters in order to tailor the chemistry, the microstructure and the morphology of the coatings. Among the several systems that were investigated, TiC–TiB2 for wear applications were successfully tested. TiC–TiB2 coatings were deposited on a hardmetal WC–Co substrate

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YAN, JIANWU, and JICHENG ZHOU. "ELEMENTAL DIFFUSION IN Ni–Cr FILMS FABRICATED BY DOUBLE-TARGETS MAGNETRON SPUTTERING." International Journal of Modern Physics B 21, no. 12 (2007): 1981–96. http://dx.doi.org/10.1142/s0217979207037132.

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By controlling the sputtering power, rotated speed of substrate and sputtering time, Ni – Cr films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The cross-sectional micrograph and element diffusion of Ni – Cr films deposited on stainless steel substrates by magnetron sputtering have been analyzed by scanning electron microscope (SEM) and energy dispersive spectroscope (EDS). The results indicate that the according compositions of Ni – Cr films are 58 wt.% Ni and 42 wt.% Cr when the sputtering powers of Ni and Cr targets are 288 W and 280 W, r

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Pitschke, W., R. Kurt, A. Heinrich, et al. "Structure and thermoelectric properties of binary and Fe-doped iridium silicide thin films." Journal of Materials Research 15, no. 3 (2000): 772–82. http://dx.doi.org/10.1557/jmr.2000.0111.

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The structure-formation process and thermoelectric properties of binary and Fe-doped IrxSi1−x (0.30 ≤ x ≤ 0.41) thin films were investigated. The films were prepared by means of physical vapor deposition techniques, in particular by magnetron co-sputtering and electron beam co-evaporation. The amount of Fe dopant varied between 0 and 5 at.%. The phase-formation process depends on the volume fractions of the major components Ir and Si, whereas the small concentrations of dopant did not change the sequence of the crystalline phases formed. On the other hand, the thermoelectric transport properti

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37

Naveen, Krishnamurthy L, and N. Shridhar T. "Experimental Study on Thickness and Surface Roughness of Co-Sputtered Titanium and Alumina Films." Journal of Recent Activities in Production 4, no. 2 (2019): 10–174. https://doi.org/10.5281/zenodo.3337626.

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Titanium (Ti) and Alumina (Al2O3) thin films have been coated using co-sputtering technique on SS304, Copper substrates. Magnetron sputtering technique has been employed, in this Direct current and Radio Frequency powers have been used in the presence of argon gas to sputter Ti and Al2O3 respectively. Experimental runs are planned by Design of Experiments (DOE) approach. Investigations have been conducted to determine optimize conditions for thickness and surface roughness of the thin films. It is vital to have a precise knowledge of film thickness and its roughness. Both of these have been me

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38

Kisielewski, J., Kamil Postava, I. Sveklo, et al. "Magnetic Anisotropy of Co Films Annealed by Laser Pulses." Solid State Phenomena 140 (October 2008): 69–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.140.69.

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The magnetic properties of an ultrathin cobalt film were modified by a focused femtosecond pulsed laser beam. The Co wedge, with a thickness ranging from 0 to 2 nm, sandwiched by Au films was prepared using ultra-high vacuum magnetron sputtering on a mica substrate. The modifications of the laser induced magnetic anisotropy were investigated using magneto-optic Kerr microscopy and MFM/AFM techniques. The laser induces: (i) local reorientation of magnetization from an in-plane to a perpendicular state and (ii) an increase of the coercivity field. A corresponding increase of the perpendicular ma

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Wang, Chun, Sanmin Ke, and Zhen Wang. "Magnetic Properties Regulation of FeGa and FeGaNi Films with Oblique Magnetron Sputtering." Magnetochemistry 8, no. 10 (2022): 111. http://dx.doi.org/10.3390/magnetochemistry8100111.

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Magnetic FeGa and FeGaNi films with an in-plane anisotropy were deposited by employing oblique magnetron sputtering. With the increase in oblique angle, the crystallite size of FeGa decreases, which indicates that oblique sputtering can refine the crystallite size. The remanence ratio of FeGa films increases from 0.5 to 0.92 for an easy axis, and the coercivity increases with the decrease in the crystallite size. The calculated static anisotropic field shows that the in-plane magnetic anisotropy can be induced by oblique sputtering and the strength increases with the oblique sputtering angle.

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Li, Ya Dan, Zhuang Hao Zheng, Ping Fan, Jing Ting Luo, Guang Xing Liang, and Bao Xiu Huang. "Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films." Materials Science Forum 847 (March 2016): 143–47. http://dx.doi.org/10.4028/www.scientific.net/msf.847.143.

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CoSb3 thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb3 thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb3 thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb3 phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.

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Prokhorenkova, Nadezhda, Almira Zhilkashinova, Madi Abilev, et al. "Structure and Mechanical Properties of Microwave-Absorbing Co-C Coatings Obtained by Magnetron Sputtering." Coatings 14, no. 10 (2024): 1234. http://dx.doi.org/10.3390/coatings14101234.

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This article is devoted to the study of microwave-absorbing properties of Co-C coating applied by magnetron sputtering. This article presents the main results of the manufacturing of a Co-C coating by magnetron sputtering, and the evaluation of experimental and computational research data on the relationship between the structure and properties of the obtained films. The structure of Co-C systems has been modeled to control the resulting structures using X-ray diffraction analysis. The structural-phase state of the resulting thin-film Co-C systems and the microwave-absorbing properties of coat

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Panda, Padmalochan, R. Ramaseshan, Madhusmita Sahoo, et al. "Local crystal structure in the vicinity of Cr in doped AlN thin films studied by X-ray absorption spectroscopy." Physical Chemistry Chemical Physics 20, no. 18 (2018): 13084–91. http://dx.doi.org/10.1039/c8cp01686k.

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This article reports the detailed X-ray absorption spectroscopy (XAS) study of Al<sub>1−x</sub>Cr<sub>x</sub>N (x = 4, 6, 11%) thin films synthesized by the reactive magnetron co-sputtering technique.

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Dong, Dongmei, Wenwen Wang, Guobo Dong, et al. "Improved performance of co-sputtered Ni–Ti oxide films for all-solid-state electrochromic devices." RSC Advances 6, no. 112 (2016): 111148–60. http://dx.doi.org/10.1039/c6ra21961f.

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Thin films of Ni–Ti oxide were co-sputtered by reactive direct current magnetron sputtering and their structures, morphologies, and compositions were investigated by X-ray diffraction, atomic force microscopy and X-ray photo-electron spectroscopy.

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Wang, Xin, Hui Jia, Wei Tao Zheng, Wei Xu, and Bei Hong Long. "Effect of Sputtering Input Power of Co on Structure and Magnetic Properties of Fe-Co-N Thin Films." Advanced Materials Research 79-82 (August 2009): 635–38. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.635.

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Fe-Co-N thin films with various Co content were synthesized on Si (111) substrate using facing-target magnetron sputtering by changing sputtering input power on Co target. During deposition, the input power on Fe target was kept at 160 W. The composition, structure, and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and superconducting quantum interference device. XRD and TEM investigations showed that at lower input power of 11.2 W on Co target, the phases in the film were -(Fe,Co)4N and Co3N. Increasin

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Wu, Xiao Li, Hui Wang, and Yu Zhen Yuan. "The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering." Advanced Materials Research 680 (April 2013): 75–80. http://dx.doi.org/10.4028/www.scientific.net/amr.680.75.

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Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of

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Wuhrer, Richard, and Wing Yiu Yeung. "Magnetron Co-Sputtering of Nanostructured Chromium Aluminium Nitride Coatings." Materials Science Forum 475-479 (January 2005): 4001–4. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.4001.

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Ternary chromium aluminium nitride (Cr,Al)N coatings were produced by reactive magnetron co-sputtering technique at different nitrogen deposition pressures. Densified nanostructured coatings with grain size below 100 nm were obtained under critically controlled deposition conditions at low nitrogen partial pressures. The nanostructured coatings were generally of improved surface roughness and properties. Microhardness measurements showed that the coatings had much higher hardness than those of coarser grain sizes. It is believed that the refinement of the coating structure at low nitrogen pres

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Cui, F. Z., J. F. Wang, Y. D. Fan, and H. D. Li. "Magnetic Co/Al multilayers prepared by planar magnetron sputtering." Journal of Applied Physics 70, no. 6 (1991): 3379–81. http://dx.doi.org/10.1063/1.349279.

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Cattaruzza, E., G. Battaglin, M. Muzio, P. Riello, and E. Trave. "Er-doped dielectric films by radiofrequency magnetron co-sputtering." Surface and Coatings Technology 204, no. 12-13 (2010): 2023–27. http://dx.doi.org/10.1016/j.surfcoat.2009.09.068.

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Posadowski, Witold Michał. "Self-sustained magnetron co-sputtering of Cu and Ni." Thin Solid Films 459, no. 1-2 (2004): 258–61. http://dx.doi.org/10.1016/j.tsf.2003.12.106.

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Cattaruzza, E., G. Battaglin, F. Visentin, and E. Trave. "Er-doped SiO2 films by rf magnetron co-sputtering." Journal of Non-Crystalline Solids 355, no. 18-21 (2009): 1128–31. http://dx.doi.org/10.1016/j.jnoncrysol.2008.11.031.

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