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Dissertations / Theses on the topic 'Memory device'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Yao, Atsushi. "Logic and memory devices of nonlinear microelectromechanical resonator." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/199314.

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2

Johnson, Nigel Christopher. "All-optical regenerative memory using a single device." Thesis, Aston University, 2009. http://publications.aston.ac.uk/15331/.

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In recent years the optical domain has been traditionally reserved for node-to-node transmission with the processing and switching achieved entirely in the electrical domain. However, with the constantly increasing demand for bandwidth and the resultant increase in transmission speeds, there is a very real fear that current electronic technology as used for processing will not be able to cope with future demands. Fuelled by this requirement for faster processing speeds, considerable research is currently being carried out into the potential of All-optical processing. One of the fundamental obs

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3

Feng, Tao Atwater Harry Albert. "Silicon nanocrystal charging dynamics and memory device applications /." Diss., Pasadena, Calif. : Caltech, 2006. http://resolver.caltech.edu/CaltechETD:etd-06052006-141803.

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4

Panayi, Christiana. "Memory-assisted measurement-device-independent quantum key distribution systems." Thesis, University of Leeds, 2016. http://etheses.whiterose.ac.uk/12449/.

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Quantum key distribution (QKD) is one of the most prominent methods for secure exchange of cryptographic keys between two users. The laws of physics provide it with an immense tool towards secure communications. Although QKD has been proven to reach distances on the order of a few hundreds of kilometers, the transmission rate of the key significantly drops when we go to further distances. One possible solution to this is to build a network of trusted nodes. The trust requirement will however narrow its scope of deployability. In this thesis, we focus on improving the key rate performance of se

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5

El, Hassan Nemat Hassan Ahmed. "Development of phase change memory cell electrical circuit model for non-volatile multistate memory device." Thesis, University of Nottingham, 2017. http://eprints.nottingham.ac.uk/39646/.

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Phase change memory (PCM) is an emerging non-volatile memory technology that demonstrates promising performance characteristics. The presented research aims to study the feasibility of using resistive non-volatile PCM in embedded memory applications, and in bridging the performance gap in traditional memory hierarchy between volatile and non-volatile memories. The research studies the operation dynamics of PCM, including its electrical, thermal and physical properties; in order to determine its behaviour. A PCM cell circuit model is designed and simulated with the aid of SPICE tools (LTSPICE I

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6

八尾, 惇. "非線形微小電気機械共振器を用いたロジック及びメモリデバイス". Kyoto University, 2015. http://hdl.handle.net/2433/199521.

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7

Nominanda, Helinda. "Amorphous silicon thin film transistor as nonvolatile device." Texas A&M University, 2008. http://hdl.handle.net/1969.1/86004.

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n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray irradiation damaged bulk f

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8

Lytvynenko, Ia M. "Magnetic tunnel junctions as a storage element for memory device." Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/35037.

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Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused great research interest and has developed into a separate branch of materials science. The large tunneling magnetoresistance (TMR) observed in MTJs got much attention due to possible applications in non-volatile random access memories and next generation sensors of magnetic field. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35037

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9

Najib, Mehran. "Toward Analysis of a Cooling Device using Shape Memory Alloys." University of Toledo / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1481300993095304.

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10

Lenz, Thomas [Verfasser]. "Device physics and nanostructuring of organic ferroelectric memory diodes / Thomas Lenz." Mainz : Universitätsbibliothek Mainz, 2017. http://d-nb.info/1135748624/34.

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11

Chi, Robert Chih-Jen. "Optical Memory Device Structure Using Vertical Interference From Digital Thin Films." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin988039043.

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12

Waghela, Krunal R. "Fabrication of a memory device using polyaniline nanofibers and gold nanoparticles." Diss., Rolla, Mo. : Missouri University of Science and Technology, 2010. http://scholarsmine.mst.edu/thesis/pdf/Waghela_09007dcc8072f881.pdf.

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Thesis (M.S.)--Missouri University of Science and Technology, 2010.<br>Vita. The entire thesis text is included in file. Title from title screen of thesis/dissertation PDF file (viewed January 6, 2010) Includes bibliographical references.

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13

Umair, Ahmad. "Synthesis and device applications of graphitic nanomaterials." Diss., University of Iowa, 2013. https://ir.uiowa.edu/etd/1511.

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This thesis is focused on two topics: (i) synthesis and characterization of bilayer graphene and pyrolytic carbon by atmospheric pressure chemical vapor deposition, and (ii) application of graphene in the fabrication of a buckyball memory device. Monolayer and bilayer graphene are semi-metal with zero bandgap. One can induce a bandgap in bilayer graphene by applying a gate voltage in the stacking direction. Thus, bandgap and Fermi level in bilayer graphene can be controlled simultaneously with a double-gate device, making it a useful material for future semiconducting applications. Controlled

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14

Zheng, Yichu [Verfasser], Hubert [Gutachter] Lakner, Stefan [Gutachter] Mannsfeld, and Koen [Gutachter] Vandewal. "pinMOS Memory : A novel, diode-based organic memory device / Yichu Zheng ; Gutachter: Hubert Lakner, Stefan Mannsfeld, Koen Vandewal." Dresden : Technische Universität Dresden, 2020. http://d-nb.info/1231846364/34.

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15

Ranganathan, Vaishnavi. "Silicon Carbide NEMS Logic and Memory for Computation at Extreme: Device Design and Analysis." Case Western Reserve University School of Graduate Studies / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=case1372682480.

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16

Mahadevan, Muralidharan Ananth. "Analysis of Garbage Collector Algorithms in Non-Volatile Memory Devices." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1365811711.

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17

Baker, Christensen Leslie Michelle. "Artistic Drawing as a Mnemonic Device." Antioch University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=antioch1476188042242805.

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18

Havey, Gary, Todd Tanji, Richard Olson, and Jerry Wald. "THE STAND-ALONE PRESSURE MEASUREMENT DEVICE, A DIGITAL MEMORY TELEMETER FOR ASSESSING SHUTTLE STRUCTURAL DYNAMICS." International Foundation for Telemetering, 1989. http://hdl.handle.net/10150/614486.

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International Telemetering Conference Proceedings / October 30-November 02, 1989 / Town & Country Hotel & Convention Center, San Diego, California<br>Honeywell, under contract from NASA Johnson Space Center and Lockheed Engineering and Sciences Company, has developed a new tool for instrumentation data collection. The Stand-Alone Pressure Measurement Device (SAPMD) is part of a family of microminiature data recorders combined with sensors that can be be used as flight development instrumentation on aerospace vehicles and structures. NASA came to Honeywell with a need to collect absolute press

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19

LI, HANG. "DESIGN OF A 32 BY 32 BIT READ HEAD DEVICE FOR PAGE-ORIENTED OPTICAL MEMORY." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1037304111.

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20

Sarim, Mohammad. "Memristive Device based Brain-Inspired Navigation and Localization for Robots." University of Cincinnati / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1522419391485511.

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21

Ferdousi, Fahmida. "Device design and process integration of high density nonvolatile memory devices." Thesis, 2011. http://hdl.handle.net/2152/ETD-UT-2011-05-2848.

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This research focuses on device design and process integration of high density nonvolatile memory devices. Research was carried out to improve scaling of floating gate memories by increasing charge density as well as spin-based memories by reducing critical switching current. This work demonstrates fabrication of CMOS-compatible nonvolatile hybrid memory device using fullerene molecules as a floating gate. Molecules have dimensions of several Angstroms resulting in an electron density of ~10¹³ cm⁻² or higher. In hybrid MOSCAPs, fullerenes were encapsulated between inorganic oxides, i.e. SiO₂ a

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22

Zheng, Yichu. "pinMOS Memory: A novel, diode-based organic memory device." 2019. https://tud.qucosa.de/id/qucosa%3A72161.

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A novel, non-volatile, organic capacitive memory device called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with multiple-bit storage that can be programmed and read out electrically and optically. The diode-based architecture simplifies the fabrication process, and makes further optimizations easy, and might even inspire new derived capacitive memory devices. Furthermore, this innovative pinMOS memory device features local charge up of an integrated capacitance rather than of an extra floating gate. Before the device can perform as desired, the leakage current due to the la

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23

Wang, Zih-Wun, and 王姿文. "The Study of Novel Anti-Fuse Memory Device." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/56375465681547044275.

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碩士<br>中原大學<br>電子工程研究所<br>93<br>Fuse and antifuse devices are important micro-electric devices. Their applications include as memory redundancy, RF circuit trimming, security code, and low-bit-count electric label. Their device structures of fuse devices are mainly metal fuse-type and poly fuse-type. They can be programmed by applying large current to melt the conductor line, and the power consumption of these programming devices is large. The structure of antifuse devices is two conductor plate sandwiched with thin dielectric material. The high voltage is supplied between two plates at program

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24

Chiang, Yueh-Lin, and 蔣岳霖. "Non-Volatile memory device apply in neural network." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/bu7f2b.

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碩士<br>中原大學<br>電子工程研究所<br>102<br>The artificial neural network simulates the operation of the human brain. It is applied extensively in audio processing and pattern recognition. With the advancement of technology, hardware portability is becoming indispensable nowadays. This thesis uses the 0.25um CMOS foundry technology to implement the 4x3 NOI array neural network and perceptron algorithms with an IC tester to verify and train the circuit. In this thesis, six input patterns were used for the learning algorithm in these NOI synapses. During the training process, the output signals were super

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25

Chen, Chih-Wei, and 陳志緯. "A Design Methodology for Flash EEPROM Memory Device." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/06876517035184081031.

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碩士<br>國立交通大學<br>電子研究所<br>84<br>A design methodology for high-speed and high-reliable flash EEPROM is presented in this thesis. By modifying a 1-D substrate injection model, agate injection probability model for 2-D numerical analysis is introduced,in which a channel hot-electron enhanced barrier lowering term is used to represent the 2-D injection probability. With this model, the writing speedand the generation of oxide-trapped-charges for various drain structures aresimulated. The simulat

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26

Lin, Heng-Tien, and 林恆田. "Investigation of Flexible Organic Memory Device incorporating Nanoparticles." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/79888147158385462242.

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博士<br>國立中央大學<br>電機工程研究所<br>97<br>In recent year, organic materials have attracted much attention due to their potential advantages of flexibility, simple process and low cost. Organic memory is an essential device for any electronic logic system to provide or store information for the logic operation, such as radio-frequency identification (RFID)-tags, electronic-papers, and electronic-signage, which strongly demand for a low cost and simple process. The organic memory devices are basically characterized by two types of structure: two terminal bistable and three terminal transistor-like memory

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27

Liang, Siang-yue, and 梁翔越. "Characterization of NiSi2 nano dot for memory device." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15220969270094822350.

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碩士<br>國立中山大學<br>物理學系研究所<br>94<br>In order to obtain memory devices with a lower operating voltages、better endurance and retention ,we use nano-dot to replace floating-gate and narrow the thickness of tunnel-oxide to modify the nonvolatile memory device we are now using. These allow the nonvolatile memory device produced in higher density、operated in lower voltage and program in faster speed. In this study, we have fabricated a nano-dot memory device with NiSi2 .The temperature-dependent leakage current has been measured with the voltage bias swept from -5V to 5V on the outer gate electrode as

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28

Feng, Tao. "Silicon Nanocrystal Charging Dynamics and Memory Device Applications." Thesis, 2006. https://thesis.library.caltech.edu/2460/1/Taothesisfinalversion.pdf.

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<p>The application of Si nanocrystals as floating gate in the metal oxide semiconductor field-effect transistor (MOSFET) based memory, which brings many advantages due to separated charge storage, attracted much attention in recent years. In this work, Si nanocrystal memory with nanocrystals synthesized by ion implantation was characterized to provide a better understanding of the relationship between structure and performance -- especially charge retention characteristics.</p> <p>In the structural characterization it was demonstrated that scanning tunneling microscopy (STM) and non-contact

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29

Hsu, Wei-Sheng, and 徐偉勝. "Study of Single Poly Gate Nonvolatile Memory Device." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/71990942596459827438.

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碩士<br>中原大學<br>電子工程研究所<br>95<br>With continuous developing of 3C products, the nonvolatile memory plays a very important role and receives more and more research and development. In order to achieve the requirement of compactness, portability and multi-functions in electronic products, VLSI processing technologies has been scaled down from micron scale into nanometer scale for their high density integration. EEPROM has advantages of electrically erasing and programming capabilities, but usually requires at least two layers of poly-Si films and masks. The extra deposition layers and masks will i

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Meng-HsuanWu and 吳孟軒. "Resistive Switching Behavior of HfO2 Nonvolatile Memory Device." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/2ne9bf.

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31

Hong, Chuan-Jie, and 洪川傑. "2D materials field-effect transistor and memory device." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/f3n5h7.

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碩士<br>中原大學<br>物理研究所<br>106<br>With the advancement of modern science and technology, electronic products have become an indispensable existence in people''s lives. Each product consists of electronic circuits, processors, logic components, etc., and the base of these components is the field-effect transistor. The miniaturization of the transistor faces the challenge of physical limits and requires new materials to solve. In recent years, two-dimensional materials are one of the most popular nano-materials. We will use 2D materials as channel materials to make field effect transistors

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32

Chang, Lung-Yu, and 張容瑜. "TiOx-based synaptic memory device for neuromorphic application." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/tq7dfd.

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碩士<br>國立交通大學<br>電子研究所<br>107<br>Neuromorphic computing is expected to emulate brain functions in the near future. There are several nonvolatile memory such as PCRAM, CBRAM, RRAM have been proposed as synaptic memory device. All of above, RRAM is the most promising candidate, due to its several advantages, low power consumption, simple structure, excellent endurance, high operation speed. However, the desirable characteristic of synaptic device is different from traditional RRAM. It requires analog switching behavior and multi-level conductance states, which are beneficial to learning accuracy.

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Yu, An-Dih, and 余安棣. "Donor-Acceptor Polymer Systems for Electrical Memory Device Applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/13669079604468617594.

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博士<br>國立臺灣大學<br>化學工程學研究所<br>102<br>Organic-based memory devices have received extensive scientific interest due to their advantages of flexibility, scalability, and material variety. However, the relationships between molecular structures, donor/acceptor compositions and electrical memory characteristics have not been fully explored yet. In this thesis, several donor/acceptor polymeric systems were explored for the understanding of structural or composition effects on the electrical characteristics of resistor-type and transistor-type memory devices. Additionally, the stability of the flexible

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34

Lin, Yi-Wei, and 藺以煒. "Characteristic of ZrO2-based 1T1R Resistive Switching Memory Device." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/95141738470460076073.

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碩士<br>國立交通大學<br>電子研究所<br>98<br>Many types of consumer electronics products require high-capacity memory with the development of the technology, in which demanding for non-volatile memory is the largest. Flash memories face the issue of scale limit, so the research of next generation non-volatile memories is booming. The resistive switching random access memory (RRAM) have these advantages, such as high operation speed, low power consumption, high cell density, and lower scale limit and non-destructive readout, which have the opportunity to become the mainstream of next generation non-volatile

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35

Chang, Ru-Wei, and 張如薇. "Exploring Endurance Characteristic in P-Channel SONOS Memory Device." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/79407991014404507700.

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碩士<br>國立交通大學<br>電信工程研究所<br>102<br>In this thesis, we investigate endurance characteristic for 10K cycles in P-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device by using dynamic programming (PGM) scheme of Channel Hot Hole Induced Hot Electron injection (CHHIHE) and Fowler-Nordheim tunneling (FN) erase. After endurance, the Vt shift, gate-induced drain leakage (GIDL) current increase and subthreshold swing (SS) degradation occurred. So, in this work, 3 possible models of degradation are investigated by examining the measurement data and found that the electron trap and interface

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36

Huang, Ming-Mao, and 黃明懋. "A study of the novel non-volatile memory device." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/04355713541029010205.

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碩士<br>長庚大學<br>半導體產業研發碩士專班<br>96<br>A novel non-volatile memory device is studied in this thesis. At first, the structure of novel non-volatile memory device will be introduced, and then the operation theorem. The novel non-volatile memory device is programmed by GIDL-like mechanism and erased by F-N tunneling. The way to read the novel non-volatile memory device is similar to read NROM. Besides, this structure will be applied in NAND array. Single cell with pass gate structure is a small string to simulate the NAND string. The operation of NAND array will be more understood by the characterist

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Weng, Yu-Ting, and 翁宇廷. "Study on NOI Memory Device Reliabilityunder Hot Hole Injection." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/81045544660329224299.

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碩士<br>中原大學<br>電子工程研究所<br>98<br>Non-volatile memories play more and more important roles with the emergence of the portable microelectronic products. The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the future development trend in non-volatile memories. This work explores the erasing charge injection in Non-overlapped Implantation (NOI) MOSFETs. The erasing chracteristics of the NOI nMOSFET

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38

Chun-PaoChuang and 莊竣堡. "Effects of Device Dimension on Characteristics and Reliability of Peripheral Devices in NAND Flash Memory." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/47628294475599989959.

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碩士<br>國立成功大學<br>微電子工程研究所<br>102<br>Recent years, NAND flash memory device which has been widely applied to 3C mobile products is suitable for mass storage devices because of high storage density, high access speed, and low unit cost. The main purpose of this thesis is about reliability and performance of peripheral devices in NAND flash memory. Since NAND flash memory cell needs high voltage for program - erase cycle, the peripheral device of cell, word line driver circuit, has to transmit high voltage to memory cell from superior circuit. The device transmitting signals receives a large VDS a

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39

Guei-Rong, Ciou. "Application and Study of Novel Silicon-Germanium for Memory Device." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709262308.

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Ho, Chia-Wei, and 何家瑋. "Study on NOI Memory Device Retention under Hot Electron Injection." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/54cqkx.

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碩士<br>中原大學<br>電子工程研究所<br>98<br>The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the future development trend in non-volatile memories. This work explores the data retention of trapped electrons in the Non-overlapped Implantation (NOI) MOSFETs. As potential non-volatile memories, the NOI devices can be programmed by channel hot electron injection. By Arrhenius equation, the charge loss with

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Wang, Shih-Hao, and 王士豪. "A study of resistive memory device containing HfO2 thin film." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/v8zugb.

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碩士<br>國立交通大學<br>材料科學與工程學系所<br>102<br>Resistive random access memory (RRAM) has been widely recognized as the next-generation nonvolatile memory to replace conventional flash memory. This study investigates the resistive switching properties of RRAM containing aluminum (Al) as the top electrode, platinum (Pt) as the bottom electrode and hafnium oxide (HfO2) as the insulator layer prepared by sputtering deposition. Electrical measurement indicated that the thickness of HfO2 layer affects Forming voltage (VForm) of RRAM and too large VForm would permanently damage the device. As to the devices co

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42

WANG, WUN-LONG, and 王文龍. "Study the memory device properties of the multiferroic thin films." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/nnm9dt.

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碩士<br>修平科技大學<br>電機工程碩士班<br>105<br>In this studied, BiFeO3 (BFO) thin films were fabricated on flexible stainless steel (FSS) by spin coating with a sol–gel method and rapid thermal annealing in the case of no oxygen. The thesis is divided into three parts to explore. First, the properties of pure phase BFO thin films after different annealing were discussed and compared. The second and third parts were investigated the partially doped with a small amount of Ni, Zn on the structure, ferroelectricity, dielectric and electrical properties of BiFe1-xNixO3 (BFNO, x=0, x=0.02, x=0.04, x=0.06, x=0.0

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Ciou, Guei-Rong, and 邱貴榮. "Application and Study of Novel Silicon-Germanium for Memory Device." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/73888848104812326320.

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碩士<br>國立清華大學<br>電子工程研究所<br>94<br>In recent years, the portable electronic product have widely applied, such as digit camera, notebook computer, mp3 walkman, intelligent IC card, USB Flash personal disc and so on , these play an important role in the market. These products are all based on nonvolatile memory. Nonvolatile memories include three type: (1)conventional flash memory, (2)SONOS memory, (3)nanocrystal memory. These memories have low power losing and fast program/erase speed. Flash memory has leaking and program/erase problems when scaling down, but SONOS and nanocrystal memory have

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44

Fan, Zhen-Jia, and 范振嘉. "The Study of Novel Single Transistor Non-Volatile Memory Device." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/84783384156476316160.

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碩士<br>中原大學<br>電子工程研究所<br>92<br>Abstract Non-Volatile Memories (NVMs) have been developed and progressing in past decades, and recently it has been received much attention in mobile and portable applications, such as mobile phones, smart cards and digital cameras. In the First part of this thesis, the history of the Non-Volatile Memory (NVM) and the concept of the NVM are introduced. And the typical NVMs, such as EPROM, EEPROM, and flash memory are also introduced. The main purpose of this thesis presents the characteristics of a single-polysilicon non-volatile memory (NVM) device by using a no

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45

Chung-Chieh, Chen, and 陳仲杰. "A Study of the Device Design in the Flash Memory." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/28168834721182950943.

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碩士<br>大葉大學<br>電機工程研究所<br>86<br>The influence of bias conditions for program,erase operation and reliability for the flash memory device will be developed in ourstudy. The flash memory cell structure is a simple self-aligned doublepolysilicon with the stacked gate structure without any select transistor and a ONO layer were fabricated between the poly gates. Three kinds of device reliability contraints are examined for hot electrondegradation, hot electron avalanche breakdown, and time-dependent dielectric breakdown. Also, we will draw out an optimum design region of oxide thickness and channe

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Chen, Chih-Jung, and 陳志榮. "Synthesis, Characterization, and Memory Device Applications of Functional Aromatic Polymers." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/81687206134526722226.

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博士<br>國立臺灣大學<br>高分子科學與工程學研究所<br>101<br>This study has been separated into five chapters. Chapter 1 is general introduction. In Chapter 2, the new functional triphenylamine-based (TPA-based) aromatic polyether (OXPE) and polyester (6FPET) derived from 4,4’-dihydroxyltriphenyamine with 2,5-bis(4-ﬂuorophenyl)-1,3,4-oxadiazole and 4,4’-(hexafluoroisopropylidene)bis(benzoylchloride), respectively, were prepared and used for memory device application. To understand the relationship between linkage group and memory behavior, polyamide 6FPA, polyimide 6FPI, and the coresponding isomer 6FPI’ were also

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Chen, Jyun-Ren, and 陳俊任. "HfAlO ferroelectric memory device with low rapid thermal annealing temperature." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/umt56s.

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碩士<br>國立交通大學<br>電子研究所<br>105<br>Nonvolatile memory devices are enormously used in consumer electronics. Ferroelectric materials have been attracted attention for past decades since these are the core of ferroelectric random acces memory(FRAM) which play important role in the market due to fast speed and much lower power consumption. However, as the CMOS devices scale down continuously, it is imperative that we find out new ferroelectric materials to replace traditional one such as PZT and SBT which can’t scale and is not applicable for CMOS process. The HfO2-base ferroelectric field effect tra

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Yang, Tun-Chih, and 楊敦智. "Oxide-based bipolar selector device for resistive switching memory applications." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/28unfb.

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Su, Sung-Ming, and 蘇崧銘. "Memory Device-Scattered Beautiful Ruins Statement of Sung-Ming Su." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/km4p65.

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碩士<br>國立彰化師範大學<br>美術學系<br>106<br>Abstract This article is to discuss the contexts of art and the display of works between 2015 and 2018. By reorganize and research the writing, object , photography, pictures, and people, I’m trying to connect these four End-point with my own works: “the memories of past”, “life experiences”, “the accumulation of habitation memories” and “the observation of life”. The paper is telling the extent and structure of this thesis, the meaning of “create” to the author, study method, and classification, relation between pictures and devices, the process of becoming

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Meng-HungChen and 陳孟泓. "Organic memory device induce by porous structure with semiconductor films." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/6km4b3.

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