Academic literature on the topic 'Milli-Kelvin temperaturer'

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Journal articles on the topic "Milli-Kelvin temperaturer"

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Merenkov, Alexey V., Vladimir I. Chichkov, Andrey B. Ermakov, Alexey V. Ustinov, and Sergey V. Shitov. "Superconducting RFTES Detector at Milli-Kelvin Temperatures." IEEE Transactions on Applied Superconductivity 28, no. 7 (2018): 1–5. http://dx.doi.org/10.1109/tasc.2018.2827981.

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Legl, S., C. Pfleiderer, and K. Krämer. "Vibrating coil magnetometer for milli-Kelvin temperatures." Review of Scientific Instruments 81, no. 4 (2010): 043911. http://dx.doi.org/10.1063/1.3374557.

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Waard, A. de, L. Gottardi, M. Bassan, et al. "Cooling down MiniGRAIL to milli-Kelvin temperatures." Classical and Quantum Gravity 21, no. 5 (2004): S465—S471. http://dx.doi.org/10.1088/0264-9381/21/5/012.

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Shinjo, Teruya. "Mössbauer studies at Milli-Kelvin temperature region." Hyperfine Interactions 42, no. 1-4 (1988): 1173–76. http://dx.doi.org/10.1007/bf02395600.

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Jain, F., R. H. Gudlavalleti, R. Mays, B. Saman, J. Chandy, and E. Heller. "Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic." International Journal of High Speed Electronics and Systems 29, no. 01n04 (2020): 2040017. http://dx.doi.org/10.1142/s0129156420400170.

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Multi-state room temperature operation of SiOx-cladded Si quantum dots (QD) and GeOx-cladded Ge quantum dot channel (QDC) field-effect transistors (FETs) and spatial wavefunction switched (SWS)-FETs have been experimentally demonstrated. This paper presents simulation of cladded Si and Ge quantum dot channel (QDC) field-effect transistors at 4.2°K and milli-Kelvin temperatures. An array of thin oxide barrier/cladding (∼1nm) on quantum dots forms a quantum dot superlattice (QDSL). A gradual channel approximation model using potential and inversion layer charge density nQM, obtained by the self-consistent solution of the Schrodinger and Poisson’s equations, is shown to predict I-V characteristics up to milli-Kelvin temperatures. Physics-based equivalent circuit models do not work below 53°K. However, they may be improved by adapting parameters derived from quantum simulations. Low-temperature operation improves noise margins in QDC- and SWS-FET based multi-bit logic, which dissipates lower power and comprise of fewer device count. In addition, the role of self-assembled cladded QDs with transfer gate provides a novel pathway to implement qubit processing.
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Hepburn, I. D., and A. Smith. "Milli-Kelvin refrigeration in space for low temperature detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 370, no. 1 (1996): 276–78. http://dx.doi.org/10.1016/0168-9002(95)01128-5.

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Amann, Andreas, Manivannan Nallaiyan, Luis Montes, Alan Wilson, and Stefano Spagna. "Fully Automated AC Susceptometer for Milli-Kelvin Temperatures in a DynaCool PPMS." IEEE Transactions on Applied Superconductivity 27, no. 4 (2017): 1–4. http://dx.doi.org/10.1109/tasc.2016.2639480.

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Pilla, S., B. Naberhuis, and J. Goodkind. "A porous silicon diode as a source of low-energy free electrons at milli-Kelvin temperatures." Journal of Applied Physics 98, no. 2 (2005): 024508. http://dx.doi.org/10.1063/1.1988972.

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Herrmannsd�rfer, T., S. Rehmann, and F. Pobell. "Magnetic properties of highly dilutedPdFex andPtFex-alloys. Part II. Susceptibility at micro- and milli-kelvin temperatures." Journal of Low Temperature Physics 104, no. 1-2 (1996): 67–94. http://dx.doi.org/10.1007/bf00754090.

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Musso, M., F. Matthai, D. Keutel, and K. L. Oehme. "Critical Raman line shape behavior of fluid nitrogen." Pure and Applied Chemistry 76, no. 1 (2004): 147–55. http://dx.doi.org/10.1351/pac200476010147.

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Isotropic Raman line shapes of simple molecular fluids exhibit critical line broadening near their respective liquid-gas critical points. In order to observe this phenomenon, it is essential that the band position of a given vibrational mode is density-dependent, and that vibrational depopulation processes negligibly contribute to line broadening. Special attention was given to the fact that the isotropic (i.e., nonrotationally broadened) line shape of liquid N2 is affected by resonant intermolecular vibrational interactions between identical oscillators. By means of the well-chosen isotopic mixture (14N2).975 - (14N15N).025, the temperature and density dependences of shift, width, and asymmetry of the resonantly coupled 14N2 and, depending on the S/N ratio available, of the resonantly uncoupled 14N15N were determined, with up to milli-Kelvin resolution, in the coexisting liquid and gas phases and along the critical isochore, using a highest-resolution double monochromator and modern charge-coupled device detection techniques. Clear evidence was found that vibrational resonance couplings are present in all dense phases studied.
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Dissertations / Theses on the topic "Milli-Kelvin temperaturer"

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Persson, Milton. "Transient Dynamics and Core Tunneling in Vertical Spin-Vortex Pairs." Thesis, KTH, Nanostrukturfysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-242225.

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Spin-vortices in vertically spaced pairs of thin elliptical Permalloy nanoparticles are investigated. The two vortex cores with parallel out-of-plane magnetization exhibit a strong monopole-like attraction through the spacer much thinner than the core length, thus forming a bound core-core pair. The material of the spacer is designed to suppress both direct and indirect exchange interactions, so the remaining inter-vortex coupling is purely dipolar. In the investigated vortex pairs, the in-plane magnetization in the vortex periphery, outside the vortex cores, curl in opposite directions (have opposite chirality). As a result, the two cores move in opposite directions in response to an in-plane magnetic field, the Zeeman effect of which acts to decouple the core-core pair. This leads to unique dynamics of the spin-vortex parallel-core/antiparallel-chirality pair, which strongly depend on whether the pair is coupled or decoupled. In the coupled state, the cores are held close together by the core-core attraction, which results in short-radius oscillations and a resonance frequency of about 2 GHz for the main rotational eigen-mode. In the decoupled state, the cores are separated by a distance much greater than the core length and gyrate independently with a resonance frequency of the order of 100 MHz. The dynamics of the vortex pair are investigated at 77 K, where there is a bistability between the coupled and decoupled core states. Resonant excitations are used to decouple the cores with pulses of ∼10 Oe in amplitude and ∼100 ps in duration. The ability to decouple a vortex pair using such fast low-power pulses can be useful for multifrequency oscillators and vortex based memory. A search for quantum effects is undertaken at sub-Kelvin temperatures using a dilution refrigerator. Square pulses of 100 ns duration and amplitudes of the order of 1 Oe are applied in-plane to bring the system closer to decoupling, giving the cores a chance to tunnel through the barrier between the coupled and decoupled states. The amplitude required for decoupling is measured as a function of temperature and a leveling off in the decoupling probability is seen below 400 mK, giving some indication of core tunneling. Macroscopic quantum tunneling of magnetization is interesting from the fundamental physics point of view, e.g., as a model system for studying the measurement paradox in quantum mechanics, as well as for current and future computer technology in terms of understanding the ultimate limitations of miniaturizing magnetic memory elements.<br>I detta arbete studeras spinnvirvlar i elliptiska skivor av Permalloy ordnade i vertikala par. Kärnor av parallell vertikal magnetisering attraherar varandra likt monopoler genom en film mycket tunnare än kärnorna och bildar därmed ett sammankopplat par. Materialet i filmen mellan virvlarna är designat för att förhindra både direkt och indirekt utbytesväxelverkan och lämnar endast kärnornas dipolväxelverkan. I de virvelpar som studeras går den plana magnetiseringen i virvlarnas periferi runt kärnorna åt olika håll (de har motsatt kiralitet). På grund av detta rör sig kärnorna åt olika håll vid applikation av magnetfält i planet (Zeeman effekten) vilket kan leda till att de kopplas isär. Detta ger virvelpar med parallella kärnor och antiparallell kiralitet unika dynamiska egenskaper som ändras med deras tillstånd, sammankopplade eller isärkopplade. I det sammankopplade tillståndet hålls kärnorna ihop av monopolattraktionen vilket gör att de bara kan röra sig i små banor kring sitt magnetiska masscentrum, med en resonansfrekvens på circa 2 GHz. I det isärkopplade tillståndet är kärnorna separerade med ett avstånd som är mycket större än kärnornas diameter, och de rör sig oberoende av varandra med en resonansfrekvens i storleksordningen 100 MHz. Virvelparets dynamik undersöks vid 77 K, där det finns en bistabilitet mellan det sammankopplade och det isärkopplade tillståndet. Pulser med längd ∼100 ps och styrka ∼10 Oe i resonans med det sammankopplade tillståndet används för att koppla isär kärnorna. Att kunna koppla isär dem med så korta lågeffektspulser kan vara användbart för virvelbaserade minnen och multifrekvensoscillatorer. Ett sökande efter kvanteffekter påbörjas vid temperaturer under 1 K med hjälp av en utspädningskyl. Fyrkantsvågor med en längd på 100 ns och en styrka i storleksordningen 1 Oe, orienterade i planet, används för att ge kärnorna en chans att tunnla genom barriären mellan det sammankopplade och det isärkopplade tillståndet. Den vågamplitud som krävs för att koppla isär kärnorna plottas mot temperaturen och kan ses plana ut under 400 mK, vilket ger viss indikation av tunnling. Dessa undersökningar av makroskopisk kvanttunnling av magnetisering kan vara användbar i grundforskning för att studera mätparadoxen i kvantmekanik, men också i modern datorteknologi för att förstå de absoluta begränsningarna i hur små magnetiska minneselement kan göras.
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Ekanayake, Sobhath Ramesh Electrical Engineering &amp Telecommunications Faculty of Engineering UNSW. "Qubit control-pulse circuits in SOS-CMOS technology for a Si:P quantum computer." Publisher:University of New South Wales. Electrical Engineering & Telecommunications, 2008. http://handle.unsw.edu.au/1959.4/43096.

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Microelectronics has shaped the world beyond what was thought possible at the time of its advent. One area of current research in this field is on the solid-state Si:P-based quantum computer (QC). In this machine, each qubit requires an individually addressed fast control-pulse for non-adiabatic drive and measure operations. Additionally, it is increasingly becoming important to be able to interface nanoelectronics with complementary metal-oxide-semiconductor (CMOS) technology. In this work, I have designed and demonstrated full-custom mixed-mode and full-digital fast control-pulse generators fabricated in a silicon-on-sapphire (SOS) CMOS commercial foundry process ?? a radio-frequency (RF) CMOS technology. These circuits are, fundamentally, fast monostable multivibrators. Initially, after the design specifications were decided upon, I characterized NFET and PFET devices and a n+-diffusion resistor from 500 nm and 250 nm commercial SOS-CMOS processes. Measuring their conductance curves at 300 300 K, 4.2 2 K, and sub-K (30 30 mK base to 1000 1000 mK) showed that they function with desirable behaviour although exhibiting some deviations from their 300 300 K characteristics. The mixed-mode first generation control-pulse generator was demonstrated showing that it produced dwell-time adjustable pulses with 100 100 ps rise-times at 300 K, 4.2 2 K, and sub-K with a power dissipation of 12 12 uW at 100 100 MHz. The full-digital second generation control-pulse generator was demonstrated showing accurately adjustable dwell-times settable via a control-word streamed synchronously to a shift-register. The design was based on a ripple-counter with provisions for internal or external clocking. This research has demonstrated that SOS-CMOS technology is highly feasible for the fabrication of control microelectronics for a Si:P-based QC. I have demonstrated full-custom SOS-CMOS mixed-mode and full-digital control circuits at 300 300 K, 4.2 2 K, and sub-K which suitable for qubit control.
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Conference papers on the topic "Milli-Kelvin temperaturer"

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Netsch, A., E. Hassinger, C. Enss, and A. Fleischmann. "Novel, Non-contact Noise Thermometer for Milli-kelvin Temperatures." In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355316.

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Willems van Beveren, L. H., J. C. McCallum, H. H. Tan, and C. Jagadish. "Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures." In 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2012. http://dx.doi.org/10.1109/commad.2012.6472354.

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Srinivasan, A., L. A. Yeoh, T. P. Martin, O. Klochan, A. P. Micolich, and A. R. Hamilton. "Electrically controlled piezo-rotator for studying semiconductor nanostructures at milli-Kelvin temperatures and high magnetic fields." In 2010 International Conference on Nanoscience and Nanotechnology (ICONN). IEEE, 2010. http://dx.doi.org/10.1109/iconn.2010.6045243.

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Pytel, Diane, and Ab Hashemi. "Precision Thermal Modeling and Measurement." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72815.

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This paper describes a study of milli-Kelvin (mK) level temperature measurement and modeling. It describes the instrumentation for mK temperature measurement and an analysis and quantification of the measurement uncertainty. It also explains the development of an analytical model and simulation of a significant portion of the laboratory equipment configuration. Finally, it provides a comparison and correlation of the laboratory and predicted results for change in temperature. Results show very good agreement and demonstrate the capability for precision temperature measurement technique described in this paper.
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Wood, C. D., D. Mistry, L. H. Li, J. E. Cunningham, E. H. Linfield, and A. G. Davies. "On-chip THz generation and detection at milli-Kelvin temperatures for the study of ultrafast phenomena in confined semiconductor systems." In 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2012). IEEE, 2012. http://dx.doi.org/10.1109/irmmw-thz.2012.6380088.

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