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Journal articles on the topic 'N-type silicon'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Guyader, F., J. K. Jung, M. Guendouz, M. Sarret, and P. Joubert. "n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films." Solid State Phenomena 51-52 (May 1996): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.211.

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2

Hovorka, Miloš, Filip Mika, Petr Mikulík, and Lud\\v{e}k Frank. "Profiling N-Type Dopants in Silicon." MATERIALS TRANSACTIONS 51, no. 2 (2010): 237–42. http://dx.doi.org/10.2320/matertrans.mc200910.

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3

Kang, Ying, and Jacob Jorné. "Photoelectrochemical dissolution of N-type silicon." Electrochimica Acta 43, no. 16-17 (1998): 2389–98. http://dx.doi.org/10.1016/s0013-4686(97)10150-5.

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4

Repo, Päivikki, Jan Benick, Ville Vähänissi, et al. "N-type Black Silicon Solar Cells." Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.

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5

da Silva, Wilson J., Ivo A. Hümmelgen, and Regina M. Q. Mello. "Sulfonated polyaniline/n-type silicon junctions." Journal of Materials Science: Materials in Electronics 20, no. 2 (2008): 123–26. http://dx.doi.org/10.1007/s10854-008-9645-x.

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6

Park, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer, and Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells." Solar Energy Materials and Solar Cells 93, no. 6-7 (2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.

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7

Ohmukai, Masato. "Structure of Porous Silicon Formed on n-Type Silicon Wafer." World Journal of Engineering and Technology 13, no. 02 (2025): 291–98. https://doi.org/10.4236/wjet.2025.132018.

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8

El Amrani, A., R. Si-Kaddour, M. Maoudj, and C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface." Materials Science-Poland 37, no. 3 (2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.

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AbstractThe SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/S

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9

HÄCKEL, S., J. DONEIT, A. PINKOWSKI, and W. J. LORENZ. "DIODE CHARACTERISTICS OF YBa2Cu3O7/n- TYPE SILICON CONTACTS." Modern Physics Letters B 02, no. 11n12 (1988): 1303–8. http://dx.doi.org/10.1142/s0217984988001284.

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The temperature dependences of diode characteristics were measured on high-T c -superconducting YBa 2 Cu 3 O 7 (polycrystalline)/n-type silicon (monocrystalline) contacts using a common two-pole-technique at low frequencies. The non-superconducting p-type semiconductor YBa 2 Cu 3 O 6.5 (polycrystalline) served as a reference substance. The temperature coefficients of the diffusion voltage, the diffusion current and the saturation current were found to be finite at T>T c , but almost zero at T≤T c . At T=78 K , the diffusion voltage of the diode YBa 2 Cu 3 O 7/n-type silicon was about 200 mV

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10

KUROKAWA, Akinari, Tetsuo SAKKA, and Yukio H. OGATA. "Maskless Copper Patterning on n-Type Silicon." Journal of The Surface Finishing Society of Japan 56, no. 5 (2005): 281–85. http://dx.doi.org/10.4139/sfj.56.281.

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11

Scott, B. L., Ke Wang, and G. Pickrell. "Fabrication of n-Type Silicon Optical Fibers." IEEE Photonics Technology Letters 21, no. 24 (2009): 1798–800. http://dx.doi.org/10.1109/lpt.2009.2033388.

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12

Abun Amanu, Abebaw. "Electronic Electrical Conductivity in N-type Silicon." American Journal of Physics and Applications 4, no. 1 (2016): 5. http://dx.doi.org/10.11648/j.ajpa.20160401.12.

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13

Kwark, Y. H., and R. M. Swanson. "N-type SIPOS and poly-silicon emitters." Solid-State Electronics 30, no. 11 (1987): 1121–25. http://dx.doi.org/10.1016/0038-1101(87)90076-1.

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14

Awadelkarim, O. O. "Divacancies production in irradiated n-type silicon." Physica B+C 150, no. 3 (1988): 312–18. http://dx.doi.org/10.1016/0378-4363(88)90069-1.

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15

Derbouz, A., A. Slaoui, E. Jolivet, F. de Moro, and C. Belouet. "N-type silicon RST ribbon solar cells." Solar Energy Materials and Solar Cells 107 (December 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.

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16

Itoh, Masashi, Naoki Yamamoto, Kuniko Takemoto, and Osamu Nittono. "Cathodoluminescence Imaging of n-Type Porous Silicon." Japanese Journal of Applied Physics 35, Part 1, No. 8 (1996): 4182–86. http://dx.doi.org/10.1143/jjap.35.4182.

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17

Humlíček, J., and K. Vojtěchovský. "Infrared optical constants of n-type silicon." Czechoslovak Journal of Physics 38, no. 9 (1988): 1033–49. http://dx.doi.org/10.1007/bf01597897.

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18

Tena-Zaera, R., S. Bastide, and C. Lévy-Clément. "Photoelectrochemical texturization of n-type multicrystalline silicon." physica status solidi (a) 204, no. 5 (2007): 1260–65. http://dx.doi.org/10.1002/pssa.200674304.

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19

Cojocaru, Ala, Jürgen Carstensen, Emmanuel K. Ossei-Wusu, Malte Leisner, Oliver Riemenschneider, and Helmut Föll. "Fast macropore growth in n-type silicon." physica status solidi (c) 6, no. 7 (2009): 1571–74. http://dx.doi.org/10.1002/pssc.200881031.

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20

Futagi, Toshiro, Takahiro Matsumoto, Masakazu Katsuno, Yasumitsu Ohta, Hidenori Mimura, and Koich Kitamura. "Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes." Japanese Journal of Applied Physics 31, Part 2, No. 5B (1992): L616—L618. http://dx.doi.org/10.1143/jjap.31.l616.

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21

Ikedo, Akihito, Takahiro Kawashima, Takeshi Kawano, and Makoto Ishida. "Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon." Applied Physics Letters 95, no. 3 (2009): 033502. http://dx.doi.org/10.1063/1.3178556.

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22

Omar, Khalid, and Khaldun A. Salman. "Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)." Journal of Nano Research 46 (March 2017): 45–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.46.45.

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Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crysta

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23

Wang, Guo Zheng, Xiao Na Li, Feng Yuan Yu, et al. "Formation of High Aspect Ratio Macropore Array on N-Type Silicon." Applied Mechanics and Materials 397-400 (September 2013): 47–51. http://dx.doi.org/10.4028/www.scientific.net/amm.397-400.47.

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The fabrication of high aspect ratio macropore silicon arrays (MSA) on n-type silicon under optimum photo-electrochemical (PEC) etching (anodization) conditions was demonstrated. The depth of the MSA can reach 350 μm with an aspect ratio of more than 100. With the presence of AOS (a type of anionic surfactant) in the electrolyte, the pore walls solution is slowest, and is more suitable for the preparation of high aspect ratio n-type MSA. The etching voltage is critical for the formation of high aspect ratio MSA on n-type silicon. The relative spectral response curve was measured for silicon ph

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24

Behzad, Kasra, Wan Mahmood Mat Yunus, Afarin Bahrami, Alireza Kharazmi, and Nayereh Soltani. "Synthesis and characterization of silicon nanorod on n-type porous silicon." Applied Optics 55, no. 9 (2016): 2143. http://dx.doi.org/10.1364/ao.55.002143.

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25

Toyama, Toshihiko, Tetsuya Suzuki, Akiyoshi Ogane, Jun Ota, and Hiroaki Okamoto. "Electroreflectance study of silicon nanocrystals fabricated from n-type silicon substrate." Journal of Materials Science: Materials in Electronics 18, S1 (2007): 443–46. http://dx.doi.org/10.1007/s10854-007-9252-2.

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26

Mohajerzadeh, S., and C. R. Selvakumar. "A novel n+-polysilicon on n-silicon iso-type diode." Canadian Journal of Physics 74, S1 (1996): 186–88. http://dx.doi.org/10.1139/p96-856.

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We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

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27

Hussein, Mohammed Jabbar, Haider Y. Hamood, Haider Mohammed Shanshool, A. S. Hasaani, and M. J. Jawad. "Open photo-acoustic cell configuration for measuring the thermal diffusivity of n-type silicon and silver/n-type silicon." Journal of Materials Science: Materials in Electronics 28, no. 6 (2016): 4925–30. http://dx.doi.org/10.1007/s10854-016-6141-6.

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28

Dhar, Sukanta, Sourav Mandal, Gourab Das, et al. "Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon." Japanese Journal of Applied Physics 54, no. 8S1 (2015): 08KD03. http://dx.doi.org/10.7567/jjap.54.08kd03.

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29

Bonavolontà, Carmela, Antonio Vettoliere, Marianna Pannico, et al. "Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors." Sensors 24, no. 18 (2024): 6068. http://dx.doi.org/10.3390/s24186068.

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Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light–matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a sp

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30

ur Rehman, Atteq, and Soo Hong Lee. "Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry." Scientific World Journal 2013 (2013): 1–13. http://dx.doi.org/10.1155/2013/470347.

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The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-

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31

Wei, Wensheng, Tianmin Wang, and W. Z. Shen. "Tunnelling in heterojunction of n-type hydrogenated nanocrystalline silicon film with p+-type crystal silicon." Semiconductor Science and Technology 21, no. 4 (2006): 532–39. http://dx.doi.org/10.1088/0268-1242/21/4/020.

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32

Cotter, J. E., J. H. Guo, P. J. Cousins, M. D. Abbott, F. W. Chen, and K. C. Fisher. "P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells." IEEE Transactions on Electron Devices 53, no. 8 (2006): 1893–901. http://dx.doi.org/10.1109/ted.2006.878026.

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33

Bigozha, O. D., A. Zh Seitmuratov, L. U. Taimuratova, B. K. Kazbekova, and Z. K. Aimaganbetova. "Longitudinal magnetoresistance of uniaxially deformed n-type silicon." Bulletin of the Karaganda University. "Physics" Series 106, no. 2 (2022): 111–16. http://dx.doi.org/10.31489/2022ph1/111-116.

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The study of Galvano-magnetic effects (as well as tensoeffects) in silicon under extreme conditions allows not only to identify the mechanisms of these effects but also to identify the possibility of creating gaussmeters, infrared detectors, sensitive strain gauges, amplifiers and generators of a wide frequency range. The reliability of the mechanism of negative magnetoresistance was verified using uniaxial elastic deformation of the studied crystals. Uniaxial deformation excludes interline transitions of electrons, as a result of which negative magnetoresistance disappears with an increase in

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34

Bigozha, O. D., A. Zh Seitmuratov, L. U. Taimuratova, B. K. Kazbekova, and Z. K. Aimaganbetova. "Longitudinal magnetoresistance of uniaxially deformed n-type silicon." Bulletin of the Karaganda University "Physics Series" 106, no. 2 (2022): 111–16. http://dx.doi.org/10.31489/2022ph2/111-116.

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The study of Galvano-magnetic effects (as well as tensoeffects) in silicon under extreme conditions allows not only to identify the mechanisms of these effects but also to identify the possibility of creating gaussmeters, infrared detectors, sensitive strain gauges, amplifiers and generators of a wide frequency range. The reliability of the mechanism of negative magnetoresistance was verified using uniaxial elastic deformation of the studied crystals. Uniaxial deformation excludes interline transitions of electrons, as a result of which negative magnetoresistance disappears with an increase in

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35

Gislason, H. P., S. Kristjánsson, and Einar Ö. Sveinbjörnsson. "Lithium-Gold-Related Photoluminescence in n-Type Silicon." Materials Science Forum 196-201 (November 1995): 695–700. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.695.

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36

Gebru, Mulugeta Habte. "Thermoelectric Coefficients Of Heavily Doped N-Type Silicon." 4, no. 4 (December 14, 2021): 189–96. http://dx.doi.org/10.26565/2312-4334-2021-4-25.

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In this study the thermoelectric effect is investigated in terms of thermoelectric power, Figure of merit(ZT), and power factor. The calculations were carried out based on Boltzmann transport equation by taking ionized impurity scattering as a dominant mechanism for heavily doped n-type silicon at 300K with charge concentration varies from 2×1018 /cm3 – 20×1020 /cm3. It is known that doping of materials can induce Fermi level shifts and doping can also induce changes of the transport mechanisms. The result of this study shows doping also induces changes in thermoelectric power, Figure of merit

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37

Fortas, G., S. Sam, Z. Fekih, and N. Gabouze. "Electrodeposition of CoNiFe Alloys on n-Type Silicon." Materials Science Forum 609 (January 2009): 207–12. http://dx.doi.org/10.4028/www.scientific.net/msf.609.207.

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Co, CoNi and CoFeNi layers were formed on n-type silicon by electrodeposition method from sulfate solutions. The obtained films were characterized by Cyclic Voltammetry (CV), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectrometry (EDS). The results show that the morphology and the stoechiometry of CoNi and CoNiFe deposits depend on several parameters (bath composition, applied potential…). The addition of sodium acetate as complexion agent in the bath leads to the formation of highly compacted and smooth films with a good adherence to the substrate.

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38

Tao, Meng, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado, and Wiley P. Kirk. "Low Schottky barriers on n-type silicon (001)." Applied Physics Letters 83, no. 13 (2003): 2593–95. http://dx.doi.org/10.1063/1.1613357.

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39

Yu, H. A., Y. Kaneko, S. Yoshimura, and S. Otani. "Photovoltaic cell of carbonaceous film/n‐type silicon." Applied Physics Letters 68, no. 4 (1996): 547–49. http://dx.doi.org/10.1063/1.116395.

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40

Istratov, A. A., H. Hieslmair, C. Flink, T. Heiser, and E. R. Weber. "Interstitial copper-related center in n-type silicon." Applied Physics Letters 71, no. 16 (1997): 2349–51. http://dx.doi.org/10.1063/1.120026.

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41

Takemoto, Kuniko, Yoshio Nakamura, and Osamu Nittono. "Microstructure and Crystallinity of N-Type Porous Silicon." Japanese Journal of Applied Physics 33, Part 1, No. 12A (1994): 6432–36. http://dx.doi.org/10.1143/jjap.33.6432.

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42

Zhang, X. G. "Mechanism of Pore Formation on n‐Type Silicon." Journal of The Electrochemical Society 138, no. 12 (1991): 3750–56. http://dx.doi.org/10.1149/1.2085494.

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43

Castaldini, Antonio, Daniela Cavalcoli, and Anna Cavallini. "Investigation on Electrical Contacts on N-Type Silicon." Solid State Phenomena 19-20 (January 1991): 529–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.529.

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44

Shishkin, Y., W. J. Choyke, and R. P. Devaty. "Photoelectrochemical etching of n-type 4H silicon carbide." Journal of Applied Physics 96, no. 4 (2004): 2311–22. http://dx.doi.org/10.1063/1.1768612.

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45

Montero, I. "Low temperature nonilluminated anodization of n-type silicon." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 3 (1990): 544. http://dx.doi.org/10.1116/1.585017.

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46

Cojocaru, Ala, Jürgen Carstensen, and Helmut Föll. "Growth Modes of Macropores in n-Type Silicon." ECS Transactions 16, no. 3 (2019): 157–72. http://dx.doi.org/10.1149/1.2982552.

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47

Simoen, E., R. Loo, P. Roussel, et al. "Defect analysis of n-type silicon strained layers." Materials Science in Semiconductor Processing 4, no. 1-3 (2001): 225–27. http://dx.doi.org/10.1016/s1369-8001(00)00144-x.

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48

Gaughan, K., S. Nitta, J. M. Viner, J. Hautala, and P. C. Taylor. "n‐type doping of amorphous silicon using tertiarybutylphosphine." Applied Physics Letters 57, no. 20 (1990): 2121–23. http://dx.doi.org/10.1063/1.103917.

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49

Mouffak, Z., H. Aourag, J. D. Moreno, and J. M. Martinez-Duart. "Quantum size effect from n-type porous silicon." Microelectronic Engineering 43-44 (August 1998): 655–59. http://dx.doi.org/10.1016/s0167-9317(98)00240-8.

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50

Forster, Maxime, Bastien Dehestru, Antoine Thomas, et al. "Compensation engineering for uniform n-type silicon ingots." Solar Energy Materials and Solar Cells 111 (April 2013): 146–52. http://dx.doi.org/10.1016/j.solmat.2013.01.001.

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