Dissertations / Theses on the topic 'Solid state circuit breaker'

This dissertation presents a systematic design and demonstration of a novel solid-state DC circuit breaker. The mechanical circuit breaker is widely used in power systems to protect industrial equipment during fault or abnormal conditions. Compared with the slow and high-maintenance mechanical circuit breaker, the solid-state circuit breaker is capable of high-speed interruption of high currents without generating an arc, hence it is maintenance-free. Both the switch and the tripping unit are solid-state, which meet the requirements of precise protection and high reliability. The major challenge in developing and adopting a solid-state circuit breaker has been the lack of power semiconductor switches that have adequate current-carrying capability and interruption capability. The high-speed, high-current solid-state DC circuit breaker proposed and demonstrated here uses a newly-emerging power semiconductor switch, the emitter turn-off (ETO) thyristor as the main interruption switch. In order to meet the requirement of being a high-current circuit breaker, ETO parallel operation is needed. Therefore the major effort of this dissertation is dedicated to the development of a high-current (5000A) DC switch module that utilizes multiple ETOs in parallel. This work can also be used to develop an AC switch module by changing the asymmetrical ETOs used to symmetrical ETOs. An accurate device model of the ETO is needed for the development of the high-current DC switch module. In this dissertation a novel physics-base lumped charge model is developed for the ETO thyristor for the first time. This model is verified experimentally and used for the research and development of the emitter turn-off (ETO) thyristor as well as the DC switch module discussed in this dissertation. With the aid of the developed device model, the device current sharing between paralleled multiple ETO thyristors is investigated. Current sharing is difficult to achieve for a thyristor-type device due to the large device parameter variations and strong positive feedback mechanism in a latched thyristor. The author proposes the "DirectETO" concept that directly benefits from the high-speed capability of the ETO and strong thermal couplings among ETOs. A high-current DC switch module based on the DirectETO can be realized by directly connecting ETOs in parallel without the bulky current sharing inductors used in other current-sharing solutions. In order to achieve voltage stress suppression under high current conditions, the parasitic parameters, especially parasitic inductance in a high-current ETO switch module are studied. The Partial Element Equivalent Circuit (PEEC) method is used to extract the parasitics. Combined with the developed device model, the electrical interactions among multiple ETOs are investigated which results in structural modification for the solid-state DC switch module. The electro-thermal model of the DC switch module and the heatsink subsystem is used to identify the "thermal runaway" phenomenon in the module that is caused by the negative temperature coefficient of the ETO's conduction drop. The comparative study of the electro-thermal coupling identifies a strongly-coupled thermal network that increases the stability of the thermal subsystem. The electro-thermal model is also used to calculate the DC and transient thermal limit of the DC switch module. The high-current (5000A) DC switch module coupled with a solid state tripping unit is successfully applied as a high-speed, high-current solid-state DC circuit breaker. The experimental demonstration of a 5000A current interruption shows an interruption time of about 5 microseconds. This high-speed, high-current DC switch module can therefore be used in DC circuit breaker applications as well as other types of application, such as AC circuit breakers, transfer switches and fault current limiters. Since the novel solid-state DC circuit breaker is able to extinguish the fault current even before it reaches an uncontrollable level, this feature provides a fast-acting, current-limiting protection scheme for power systems that is not possible with traditional circuit breakers. The potential impact on the power system is also discussed in this dissertation.
Ph. D.

DC circuit breakers must be able to arrest overcurrent conditions to prevent electrical equipment and wiring from causing building fires or other hazards from occurring. With more DC renewable sourced structures such as Cal Poly’s DC House, an inexpensive and reliable protection system is necessary to ensure safe energy transfer to the loads. One method of protecting a system is preventing excessive amounts of current to be drawn by the load when the surrounding components are rated at a lesser value. DC circuit breakers act as a monitoring system and barely presents an effect on the voltage or power. With most DC circuit breakers on the market being mechanical, the response time to an overload condition is limited to the speed the contacts can disconnect. The examination of response timing and overcurrent limiting is explored in this thesis when using a solid state based DC circuit breaker. The system is designed to handle 600 W, where the operating voltage is 48 V and the maximum allowable current is 12.5 A. The solid state DC circuit breaker has the capability of arresting excessive currents within 30 µs and can be reset through a single pole single throw switch.

Cette thèse présente l'étude et la réalisation d'un disjoncteur statique tout silicium et intelligent pouvant fonctionner à haute température (200°C) pour des applications de type DC basse et moyenne tensions. Plusieurs applications dans l’aéronautique, l’automobile et les transports ferroviaires poussent les composants à semi-conducteur de puissance à être utilisés à haute température. Cependant, les Si-IGBT et Si-CoolMOSTM actuellement commercialisés ont une température de jonction spécifiée et estimée à 150°C et quelque fois à 175°C. L’une des faiblesses des convertisseurs provient de la réduction du rendement avec l’augmentation de la température de jonction des composants à semiconducteur de puissance qui peut amener à leur destruction. La solution serait d’utiliser des composants grand-gap (SiC, GaN), qui autorisent un fonctionnement à une température de jonction plus élevée ;mais ces technologies en plein essor ont un coût relativement élevé. Une solution alternative serait de faire fonctionner des composants en silicium à une température de jonction voisine de 200°C afin de conserver l’un des principaux intérêts du silicium en termes de coût. Avant de commencer, le premier chapitre portera sur un état de l’art des différentes techniques de protection aussi bien mécanique que statique afin d’identifier les éléments essentiels pour la réalisation du circuit de protection. Les disjoncteurs hybrides seront aussi abordés afin de voir comment ceux-ci arrivent à combler les lacunes des disjoncteurs mécaniques et purement électroniques (statiques). A partir du chapitre précédent, un disjoncteur statique intelligent de faible puissance sera réalisé afin de mieux cerner les différentes difficultés qui sont liées à ce type de disjoncteur. Le disjoncteur statique sera réalisé à partir de fonction analogique de telle façon à ce qui soit autonome et bas cout. Il en ressort que les inductances parasites ainsi que la température des composants à base de semi-conducteurs ont un impact significatif lors de la coupure.Le chapitre III portera sur une analyse non exhaustive, vis-à-vis de la température, de différents types d’interrupteurs contrôlés à base de semi-conducteur de puissance en s’appuyant sur plusieurs caractérisations électriques (test de conduction, tension de seuil, etc) afin de sélectionner le type d’interrupteur de puissance qui sera utilisé pour le chapitre IV. Comme il sera démontré, les composants silicium à super jonction peuvent se rapprocher du comportement des composants à base de carbure de silicium pour les basses puissances. Un disjoncteur statique 400V/63A (courant de court-circuit prédictible de 5kA) sera étudié et 4développé afin de mettre en pratique ce qui a été précédemment acquis et pour montrer la compétitivité du silicium pour cette gamme de puissance
This thesis presents a study about a smart solid state circuit breaker which can work at 200°C forlow and medium voltage continuous applications. Some applications in aeronautics, automotive,railways, petroleum extraction push power semiconductor devices to operate at high junctiontemperature. However, current commercially available Si-IGBT and Si-CoolMOS have basically amaximum junction temperature specified and rated at 150°C and even 175°C. Indeed, the main problemin conventional DC-DC converters is the switching losses of power semiconductor devices (linked to thetemperature influence on carrier lifetime, on-state voltage, on-resistance and leakage current) whichdrastically increase with the temperature rise and may drive to the device failure. Then, the use of wideband gap semiconductor like SiC or GaN devices allows higher junction temperature operation (intheory about 500°C) and higher integration (smaller heatsink, higher switching frequency, smallconverter), but are still under development and are expensive technologies. In order to keep theadvantage of low cost silicon devices, a solution is to investigate the feasibility to operate such devicesat junction temperature up to 200°C.Before starting the first starting chapter is a stat of the art of protectives circuit technics as well asmechanics as statics in order to identify essentials elements to develop the protective circuit. Hybridprotective circuits are approached too.From the precedent chapter, a smart and low power solid state circuit breaker is realized to identifyproblems which are linked with this type of circuit breaker. Solid state circuit breaker is developed withanalog components in a way that is autonomous and low cost. It’s follow that stray inductance andtemperature have an important impact when a default occurs.Chapter III give an analyze on different silicon power semiconductor dice towards temperature5relying on statics and dynamics characteristics in order to find the best silicon power switch which beused in the chapter IV. It has been shown that super junction MOSFET has the same behavior at lowpower than silicon carbide MOSFET.Solid state circuit breaker (400V/63A) has been studied and developed, in order to use all theknowledge previously acquired and to show the competitively of the silicon for this power range

The development of millimeter-wave (30-300 GHz) sensors and communications systems has a long history of interest, spanning back almost six decades. In particular, mm-wave radars have applications as automotive radars, in remote atmospheric sensing applications, as landing radars for air and spacecraft, and for high precision imaging applications. Mm-wave radar systems have high angular accuracy and range resolution, and, while susceptible to atmospheric attenuation, are less susceptible to optically opaque conditions, such as smoke or dust. This dissertation document will present the initial steps towards a new approach to the creation of a mm-wave radar system at 94 GHz. Specifically, this dissertation presents the design, fabrication and testing of various components of a highly integrated mm-wave a 94 Ghz monopulse radar transmitter/receiver. Several architectural approaches are considered, including passive and active implementations of RF monopulse comparator networks. These architectures are enabled by a high-performance three-dimensional rectangular coaxial microwave transmission line technology known as PolyStrataTM as well as silicon-based IC technologies. A number of specific components are examined in detail, including: a 2x2 PolyStrata antenna array, a passive monopulse comparator network, a 94 GHz SiGe two-port active comparator MMIC, a 24 GHz RF-CMOS 4-port active monopulse comparator IC, and a series of V- and W-band corporate combining structures for use in transmitter power combining applications. The 94 GHz cavity-backed antennas based on a rectangular coaxial feeding network have been designed, fabricated, and tested. 13 dB gain for a 2 x 2 array, as well as antenna patterns are reported. In an effort to facilitate high-accuracy measurement of the antenna array, an E-probe transition to waveguide and PolyStrata diode detectors were also designed and fabricated. AW-band rectangular coaxial passive monopulse comparator with integrated antenna array and diode detectors have also been presented. Measured monopulse nulls of 31.4 dB in the ΔAZ plane have been demonstrated. 94-GHz SiGe active monopulse comparator IC and 24 GHz RF-CMOS active monopulse comparator RFIC designs are presented, including detailed simulations of monopulse nulls and performance over frequency. Simulations of the W-band SiGe active monopulse comparator IC indicate potential for wideband operation, with 30 dB monopulse nulls from 75-105 GHz. For the 24-GHz active monopulse comparator IC, simulated monopulse nulls of 71 dB and 68 dB were reported for the azimuthal and elevational sweeps. Measurements of these ICs were unsuccessful due to layout errors and incomplete accounting for parasitics. Simulated results from a series of rectangular coaxial power corporate power combining structures have been presented, and their relative merits discussed. These designs include 2-1 and 4-1 reactive, Wilkinson, and Gysel combiners at V- and W-band. Measured back-to-back results from Gysel combiners at 60 GHz included insertion loss of 0.13 dB per division for a 2-1 combination, and an insertion loss of 0.3 dB and 0.14 dB for "planar" and "direct" 4-1 combinations, respectively. At 94 GHz, a measured insertion loss of 0.1 dB per division has been presented for a 2-1 Gysel combination, using a back-to-back structure. Preliminary designs for a solid-state power amplifier (SSPA) structure have also been presented. Finally, two conceptual monopulse transceivers will be presented, as a vehicle for integrating the various components demonstrated in this dissertation.
Ph. D.

This Master thesis is based on problems of force effects of the magnetic field of short-circuit current. Firstly, I analysed the force action of the three phase busbars during the three-pole short circuit. The analysis was performed in the Ansys Maxwell program and I verified the correctness of the analysis by numerical calculation. The second practical part was executed for ABB company. The main task was to analyse the force effects of the short-circuit current in the HV switchgear with focusing on the arms and contact system of the circuit breaker. The simulations of the following configurations were performed in more details: three configurations of the simplified VD4 circuit breaker, two types of VD4 circuit-breaker contact systems and a linear circuit breaker configuration model. The objective was to calculate the forces acting on the current path of the arms and contact system of the VD4 circuit breaker during the three-phase short-circuit and to simulate the effects of forces on these current parts. For modelling of individual assemblies, calculations and simulations I used: SolidWorks 2014, Ansys Maxwell 16.0 and Ansys Workbench 14.5 programs. With SolidWorks 2014 3D CAD software were modelled simplified assemblies of circuit breakers and contact systems. These systems were imported into the Ansys Maxwell software, where the force effects of the magnetic field of the short-circuit current were calculated. In Ansys Workbench programme was simulated the effect of forces on the current circuit breakers. Moreover, the final deformations of the materials (with respect to the mechanical properties of the structure) were plotted. The analysis of force effects of the magnetic field was performed for the specified static short - circuit current value.

Ce memoire presente l'etude et la realisation d'un circuit integre bipolaire de type ecl sur arseniure de gallium. Une etude theorique de transistors bipolaires a double heterojonction a montre l'influence determinante de la jonction collecteur-base, notamment de sa gradualite, sur leur comportement electrique. Ces resultats ont pu etre confirmes par une analyse experimentale a partir de structures realisees par epitaxie en phase liquide. La simulation et l'optimisation d'un oscillateur en anneau a base de simples heterotransistors et mettant en oeuvre le logiciel astec iii, ont permis de calculer des temps de propagation par porte de 20 ps pour une puissance consommee de 4 mw; ceci confirme les potentialites de la filiere logique bipolaire sur asga. Enfin, un oscillateur en anneau a 3 portes ecl a ete concu et realise par les technologies d'epitaxie en phase liquide et d'attaques mesas, a partir d'un processus nouveau sur substrat semi-isolant. La faisabilite d'un circuit integre bipolaire asga a ainsi ete montree

In this work, a new organic light-emitting device (OLED) structure is proposed that allows light-emission from a metal-free device region, thus reducing the hurdles towards an electrically pumped organic solid state laser (OSL). Our design concept employs a stepwise change from a highly conductive but opaque metal part to a highly transparent but less conductive intrinsic emission layer. Here, the high current densities are localized to an area of a few micrometer in square, which is in the range of the mode volume of the transverse mode of an organic vertical-cavity surface-emitting laser (VCSEL). Besides these experimental results, we present findings from simulations which further support the feasibility of our design concept. Using an equivalent circuit approach, representing the current ow in the device, we calculate the time-dependent length of the emission zone and give estimations for appropriate material parameters.

S pokroky v teorii počtu neceločíselného řádu a také s rozšířením inženýrských aplikací systémů neceločíselného řádu byla značná pozornost věnována analogové implementaci integrátorů a derivátorů neceločíselného řádu. Je to dáno tím, že tento mocný matematický nástroj nám umožňuje přesněji popsat a modelovat fenomén reálného světa ve srovnání s klasickými „celočíselnými“ metodami. Navíc nám jejich dodatečný stupeň volnosti umožňuje navrhovat přesnější a robustnější systémy, které by s konvenčními kondenzátory bylo nepraktické nebo nemožné realizovat. V předložené disertační práci je věnována pozornost širokému spektru problémů spojených s návrhem analogových obvodů systémů neceločíselného řádu: optimalizace rezistivně-kapacitních a rezistivně-induktivních typů prvků neceločíselného řádu, realizace aktivních kapacitorů neceločíselného řádu, analogová implementace integrátoru neceločíselného řádů, robustní návrh proporcionálně-integračního regulátoru neceločíselného řádu, výzkum různých materiálů pro výrobu kapacitorů neceločíselného řádu s ultraširokým kmitočtovým pásmem a malou fázovou chybou, možná realizace nízkofrekvenčních a vysokofrekvenčních oscilátorů neceločíselného řádu v analogové oblasti, matematická a experimentální studie kapacitorů s pevným dielektrikem neceločíselného řádu v sériových, paralelních a složených obvodech. Navrhované přístupy v této práci jsou důležitými faktory v rámci budoucích studií dynamických systémů neceločíselného řádu.

碩士
國立成功大學
電機工程學系碩士在職專班
104
According to the characteristics of MOSFET, MOSFET can be operated in linear region, cut off region and saturation region. The proposed solid state circuit breaker utilizes the characteristics of MOSFET operating in saturation region . It offers a short tripping time and precise current limiting during overload current fault. The proposed solid state circuit breaker possesses the advantages of conventional circuit breakers, which offers a comprehensive protection to those devices that is sensitive to electric fault. There is no additional current limit inductor such as general fault current limiters. Therefore, the size of product is smaller than general fault current limiters. In this thesis, the operational principle of the circuit will be described in detail and simulation is presented. Then, a proposed solid state circuit breaker is implemented, the given specifications are AC 220V operating voltage, 30A nominal current capability and 45A peak current for protection. Finally, the experimental result shows that the proposed circuit breaker can perform a short tripping time which is 10µs and a precise current limiting which is limited to 90A. Therefore, the capability of proposed circuit breaker is shown to provide a comprehensive protection.

碩士
國立清華大學
電機工程學系
97
The application of DC distribution system combined with power electronic techniques is the way to solve energy issues. In addition, the amount of energy consumption in data centers is always an issue worthy to be considered. The advantage in DC power system lies on the features of transmission efficiency within low distance or high voltage. Higher transmission efficiency can be achieved due to the absence of reactive power. There are kinds of products which adopt digital electronic loads or variable-frequency motors in order to enhance the performance. Since most renewable energy generators like solar cell and fuel cell, AC/DC conversions stages can be saved while applying to DC system. In the DC distribution grid, when grounded fault is detected at load side or distributed generation side, the DC circuit breakers should provide a fast interruption capability for the fault current and prevent the local grid from collapses. DC circuit breakers can be categorized into mechanical and solid-state types. The mechanical types have the advantages of low conduction losses, but the mechanical turn-off time is long so that the fault current is larger. For this reason the devices should be chosen at higher rating and have the capability to extinguish the occurring arc. The solid-state types have shorter turn-off time and no occurring arc. However, while a semiconductor device is used as main switch, the conduction loss is large which leads to thermal problems. The AC mechanical circuit breakers are available on the market. However, the design of circuit breakers for DC distribution system is a challenge compared with AC circuit breakers due to the absence of natural zero crossing. Therefore, in this thesis, except that the feasibility of DC distribution systems will be discussed, some topologies of DC circuit breakers in DC environment are proposed with the verification by simulation and experiment results.

碩士
國立臺灣科技大學
電機工程系
105
Based on many kinds and counts of Circuit Breaker (CB) in Taipower system and one-sixth of CBs are over utility limited of manufacture suggestion that the work is twenty years. According to Bathtub Curve, these equipment is working in high risk status. The operation time was focused on the Taipower CB maintenance that is refer to the IEC62271-100 and the CB estimate is not built in long term maintenance schedule. In order to improve operation safety and reliability, the mechanism of CB estimate has to be built in the prevention and detection of the CB operation quality early. The operation time of CB that is over two hundred thousand sets of maintenance record that was studied in this research using the Big-data analysis. The CB hidden weakness can be discovered by the operation trend from big-data analysis. The normal distribution and reliability area analysis were designed in this study. The time standard error for each voltage level can be used in CB healthy status estimate in initial stage and the equipment weakness trend can be obtained from the analytical result. Finally, the User-Interface platform can be built by using the R language. The analytical result of the equipment weakness trend can be obtained for staff maintenance planning or rescheduling. The experimental cases are verified by this method and can reach the goal of reducing operation risk and maintenance cost.

碩士
淡江大學
電機工程學系碩士在職專班
104
The flash memories have congenital defects that the data cannot be repaired when they are damaged. Thus, how to prevent data destruction has become a must-have feature. Especially when using the Solid State Drives (SSD), how to prevent the data destruction caused by a hard disk failure is an important design issue. In this thesis, a high-performance power rescue system used in solid state drives is designed and implemented. A high-performance energy storage management control circuit with some common tantalum capacitors is designed to store power. It can improve the drawbacks of the previously used super capacitors, such as bulky and expensive. Moreover, a most simplified charge and discharge system with a single path in the power bus is designed in the high-performance power rescue system to protect data transmission. In the hard drives failure or an unexpected power shutdown without warning status, the proposed method can prevent data damage or hard drive failure.

This thesis presents a novel hybrid biological solid-state system which makes use of biological components in an in-vitro environment to produce functionality incapable by CMOS circuits alone. A "biocell" comprised of lipids and ion pumps is mated to a CMOS IC in a compact configuration and the IC is powered solely from adenosine triphosphate (ATP), often referred to as the 'life energy currency.' The biocell is a fuel cell that produces a membrane potential in the presence of ATP which is used by the IC as an electrical power supply. The design represents the first of a new class of devices combining both biological and solid-state components, which exploit the unique properties of transmembrane proteins in engineered solid-state systems. This work also suggests that the richness of function of biological ion channels and pumps, functionality that is impossible to achieve in CMOS alone, may be exploited in systems that combine engineered transmembrane proteins as biological components integrated with solid-state devices.

碩士
中華大學
電機工程學系碩士在職專班
100
Micro projector producing skills have been more mature and developed. The newly developments have made the micro projector market grows. Also, the light source of a LED has rapid growth and is able to provide perfect light source for the LED. Many qualities included longer life spam, smaller in size, easy to be use on any lighting products such as LCD backlight and projector light source system. Following by the newly developments, the board’s size has been decreasing, but resolution increases. Micro projection skills are more mature and it has met the needs of the market. The micro projector can be widely used on personal to business usage. The needs of micro projector has increase, therefore, there will be a brighter future for the product to be known by people.

Thesis (M.S.)--University of Tennessee, Knoxville, 2003.
Title from title page screen (viewed Mar. 15, 2004). Thesis advisor: Dr. Benjamin J. Blalock. Document formatted into pages (vii, 79 p. : ill. (some col.)). Vita. Includes bibliographical references (p. 72-76).

碩士
國立雲林科技大學
電子與資訊工程研究所
93
The objective of this thesis is to study the fabrication and the stability of the RuOx Extended Gate Field Effect Transistor (RuOx-EGFET) for the pH-ISFET or biosensor applications. The major researches include the sensitivity, linearity, drift, hysteresis, miniaturization of the reference field effect transistor (REFET) and differential readout circuit. This thesis presents a method that I prepare the RuOx-EGFET by the radio frequency (R.F.) technology, which apply the structure of separative structure EGFET instead of the conventional gate ISFET(Ion Sensitive Field Effect Transistor) for reducing the cost of fabrication and measurement. In the best process, the experiment could be achieved, the average linear sensitivity is 55.3 mV/pH, the sensing range pH1-pH12. We can obtain that EGFET prepared by the R.F method, and manufacture RuOx-EGFET with high electrical conduction by the IC fabrication process. The polypyrrole (PPy) membrane was as reference field effect transistor, which was deposited on the RuOx-EGFET in order to design a differential pH-sensing device. In this way, a totally solid-state sensing device can be constructed. Hence, this pH sensor is suitable to be a pH sensor for its simple fabrication, low cost, good reliability, and solid-state sensing device.

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5.32 dB at 6 V. A high-performance waveguide photodetector integrated LD at 405 nm sharing the single active region is presented, showing a significant large modulation bandwidth of 230 MHz. Thus these seamlessly integrated elements enable photonic IC at the visible wavelength for many important applications, such as smart lighting and display, optical communication, switching, clocking, and interconnect. The findings are therefore significant in developing an energy-saving platform technology that powers up human activities in a safe, health- and environmental-friendly manner.

Desire for low-power, high performance computing has been at core of the symbiotic union between digital circuits and CMOS scaling. While digital circuit performance improves with device scaling, analog circuits have not gained these benefits. As a result, it has become necessary to leverage increased digital circuit performance to mitigate analog circuit deficiencies in nanometer scale CMOS in order to realize world class analog solutions. In this thesis, both circuit and system enhancement techniques to improve performance of clock generators are discussed. The following techniques were developed: (1) A digital PLL that employs an adaptive and highly efficient way to cancel the effect of supply noise, (2) a supply regulated DPLL that uses low power regulator and improves supply noise rejection, (3) a digital multiplying DLL that obviates the need for high-resolution TDC while achieving sub-picosecond jitter and excellent supply noise immunity, and (4) a high resolution TDC based on a switched ring oscillator, are presented. Measured results obtained from the prototype chips are presented to illustrate the proposed design techniques.
Graduation date: 2013
Access restricted to the OSU Community at author's request from July 16, 2012 - July 16, 2014