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Journal articles on the topic 'Spectrometrie sims'

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Published: 4 June 2021
Last updated: 1 February 2022

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1

Linton, Richard W. "Direct Imaging of Trace Elements, Isotopes, and Molecules Using Mass Spectrometry." Microscopy and Microanalysis 4, S2 (July 1998): 124–25. http://dx.doi.org/10.1017/s1431927600020742.

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Secondary ion mass spectrometry (SIMS) is based upon the energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film microanalysis. The scope of the technique includes a diversity of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis and Imaging (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.
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2

Linton, Richard W. "Secondary ion mass spectroscopy in the biological and materials sciences." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 498–99. http://dx.doi.org/10.1017/s0424820100148320.

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Secondary ion mass spectrometry (SIMS) is based upon energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film chemical analysis. In recent years, the scope of the technique has broadened to include a variety of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on the development of depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.
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3

Virag, A., G. Friedbacher, M. Grasserbauer, H. M. Ortner, and P. Wilhartitz. "Multielement ultratrace analysis of molybdenum with high performance secondary ion mass spectrometry." Journal of Materials Research 3, no. 4 (August 1988): 694–704. http://dx.doi.org/10.1557/jmr.1988.0694.

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Electron beam melting has been used to obtain ultrapure refractory metals that are gaining importance in metal oxide semiconductor-very large scale integration (MOS-VLSI) processing technology, fusion reactor technology, or as superconducting materials. Although the technology of electron beam melting is well established in the field of production of very clean refractory metals, little is known about the limitations of the method because the impurity level of the final products is frequently below the detection power of common methods for trace analysis. Characterization of these materials can be accomplished primarily by in situ methods like neutron activation analysis and mass spectrometric methods [glow discharge mass spectrometry (GDMS), secondary ion mass spectrometry (SIMS)]. A suitable method for quantitative multielement ultratrace bulk analysis of molybdenum with SIMS has been developed. Detection limits of the analyzed elements from 10−7g/gdown to 10−12g/g have been found. Additional information about the distribution of the trace elements has been accumulated.
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4

Meeker, G. P., J. E. Taggart, and S. A. Wilson. "A Basalt Glass Standard for Multiple Micro Analytical Techniques." Microscopy and Microanalysis 4, S2 (July 1998): 240–41. http://dx.doi.org/10.1017/s1431927600021322.

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Well-characterized calibration standards for microanalytical applications are difficult to obtain, often poorly characterized, and often not homogeneous from piece to piece. In addition, many microanalytical standards are available only in very small quantities making inter-laboratory comparisons difficult. To further complicate the situation, destructive microbeam techniques such as secondary ion mass spectrometry (SIMS) and laser source mass spectrometries (LSMS) require larger quantities of material than nondestructive techniques.The U.S. Geological Survey, Geologic Division is in the process of evaluating ways to produce relatively large quantities of well-characterized standards. We are interested in producing standards of geological materials appropriate for multiple microbeam techniques including electron probe microanalysis (EPMA), SIMS and LSMS. The microbeam standards are produced by melting powders of standards of naturally occurring materials that the USGS has previously provided as bulk analytical standards.
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5

HIRAOKA, Kenzo. "Fundamentals of Mass Spectrometry -Secondary Ion Mass Spectrometry (SIMS), Cluster SIMS, and Electrospray Droplet Impact SIMS-." Journal of the Mass Spectrometry Society of Japan 58, no. 5 (2010): 175–84. http://dx.doi.org/10.5702/massspec.58.175.

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6

Katz, W., and J. G. Newman. "Fundamentals of Secondary Ion Mass Spectrometry." MRS Bulletin 12, no. 6 (September 1987): 40–47. http://dx.doi.org/10.1557/s088376940006721x.

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AbstractThis article presents an overview of our current understanding of the fundamental factors underlying Secondary Ion Mass Spectrometry (SIMS). Included is a discussion of the sputtering process and possible mechanisms which produce ejected ions. Presently available instrumentation for SIMS analysis is discussed and some examples of SIMS analysis are also given.
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7

Phinney, Douglas. "Quantitative Analysis of Microstructures by Secondary Ion Mass Spectrometry." Microscopy and Microanalysis 12, no. 4 (July 14, 2006): 352–55. http://dx.doi.org/10.1017/s1431927606060399.

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The focus of this review is on trace-element quantitation of microstructures in solids. This review is aimed at the nonspecialist who wants to know how secondary ion mass spectrometry (SIMS) quantitation is achieved. Despite 35 years of SIMS research and applications, SIMS quantitation remains a fundamentally empirical enterprise and is based on standards. The most used standards are “bulk standards”—solids with a homogeneous distribution of a trace element—and ion-implanted solids. The SIMS systematics of bulk standards and ion-implanted solids are reviewed.
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8

Kudo, Masahiro, and Susumu Nagayama. "Secondary Ion Mass Spectrometry (SIMS)." Zairyo-to-Kankyo 42, no. 5 (1993): 312–21. http://dx.doi.org/10.3323/jcorr1991.42.312.

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9

Hayashi, S., and K. Yanagihara. "Characterization Of SiO2/Si Interface Using Secondary Ion Mass Spectrometry(Sims) And Laser Post-Ionization Sputtered Neutral Mass Spectrometry(Snms)." Microscopy and Microanalysis 5, S2 (August 1999): 124–25. http://dx.doi.org/10.1017/s1431927600013945.

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SIMS has inherent difficulties with quantification because of the so called “matrix effect”. Many factors contribute to the matrix effect, e.g. differing concentration of oxygen, sputtering rate differences in the hetero-layers, etc. In the case of MOS(metal-oxide-semiconductor) structures, the oxide layer gives rise to a large matrix effect. It is thus very difficult to use SIMS to evaluate the relationship between the electrical properties of the LSI devices and the impurity profiles present in such systems.So we have been studying laser post-ionization SNMS, which consists of TOF-SIMS apparatus and excimer laser, in order to quantify the impurity profiles around SiO2/Si interface. Depth profiles of implanted Cu with 1×1015 atoms/cm2 in SiO2(100 nm)/Si system taken by Monte-Carlo simulation ,SIMS and laser post-ionization SNMS are shown in Fig.l. In this implantation condition the Cu+:Cu2+:Cu3+ percentage ratios of the charge distributions were 44:42:14. Fig. 1(a) shows the theoretical depth profiles expetted from this implantation condition by Monte-Cairo simulation.
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10

Portavoce, Alain, Khalid Hoummada, and Lee Chow. "Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements." Microscopy and Microanalysis 25, no. 2 (January 30, 2019): 517–23. http://dx.doi.org/10.1017/s1431927618015623.

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AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.
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11

Xia, Xiao-Ping, Ze-Xian Cui, Wancai Li, Wan-Feng Zhang, Qing Yang, Hejiu Hui, and Chun-Kit Lai. "Zircon water content: reference material development and simultaneous measurement of oxygen isotopes by SIMS." Journal of Analytical Atomic Spectrometry 34, no. 6 (2019): 1088–97. http://dx.doi.org/10.1039/c9ja00073a.

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Zircon water content is an important physicochemical parameter for many geological processes, yet its measurement by the secondary ion mass spectrometry (SIMS) technique is hampered by the lack of suitable reference materials and high water background, especially if large-geometry (LG)-SIMS is used.
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12

Benninghoven, A., A. M. Huber, and H. W. Werner. "Secondary ion mass spectrometry (SIMS VI)." Analytica Chimica Acta 215 (1988): 366. http://dx.doi.org/10.1016/s0003-2670(00)85312-x.

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13

Sykes, D. E. "Secondary ion mass spectrometry - SIMS VIII." Spectrochimica Acta Part A: Molecular Spectroscopy 49, no. 10 (September 1993): 1555–56. http://dx.doi.org/10.1016/0584-8539(93)80061-e.

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14

Vainiotalo, Pirjo. "Secondary ion mass spectrometry SIMS IX." Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 51, no. 9 (August 1995): 1533. http://dx.doi.org/10.1016/0584-8539(95)90161-2.

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15

Roberts, AlanD. "Secondary ion mass spectrometry (SIMS VII)." Analytica Chimica Acta 242 (1991): 301–2. http://dx.doi.org/10.1016/0003-2670(91)87086-m.

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16

Andersen, Hans Henrik. "Secondary ion mass spectrometry SIMS V." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 31, no. 4 (June 1988): 597–98. http://dx.doi.org/10.1016/0168-583x(88)90462-4.

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17

Schueler, Bruno, and Robert W. Odom. "Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 2 (August 12, 1990): 308–9. http://dx.doi.org/10.1017/s0424820100135149.

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Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.
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18

Matsushita, Yasuyuki, In-Cheol Jang, Takanori Imai, Ruka Takama, Kaori Saito, Takashi Masumi, Seung-Cheol Lee, and Kazuhiko Fukushima. "Distribution of extracts including 4,8-dihydroxy-5-methoxy-2-naphthaldehyde in Diospyros kaki analyzed by gas chromatography-mass spectrometry and time-of-flight secondary ion mass spectrometry." Holzforschung 66, no. 6 (August 1, 2012): 705–9. http://dx.doi.org/10.1515/hf-2011-0214.

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Abstract The distribution of ethyl acetate extracts and 4,8-dihydroxy-5-methoxy-2-naphthaldehyde (compound I), which is a major constituent of the extracts obtained from the blackened heartwood of Diospyros kaki, was analyzed via gas chromatography-mass spectrometry (GC-MS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). According to GC-MS, the extracts and compound I are high in concentration at the pith and at the edges of the blackened heartwood. ToF-SIMS analysis revealed a peak at a mass-to-charge ratio of (m/z) 218, which is characteristic of the ionic form of compound I. The ToF-SIMS imaging of compound I in the blackened heartwood based on m/z 218 shows that compound I is located in parenchyma cells and their neighboring axial elements.
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19

Davidson, C. M., N. J. Peters, A. Britton, L. Brady, P. H. E. Gardiner, and B. D. Lewis. "Surface analysis and depth profiling of corrosion products formed in lead pipes used to supply low alkalinity drinking water." Water Science and Technology 49, no. 2 (January 1, 2004): 49–54. http://dx.doi.org/10.2166/wst.2004.0086.

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Modern analytical techniques have been applied to investigate the nature of lead pipe corrosion products formed in pH adjusted, orthophosphate-treated, low alkalinity water, under supply conditions. Depth profiling and surface analysis have been carried out on pipe samples obtained from the water distribution system in Glasgow, Scotland, UK. X-ray diffraction spectrometry identified basic lead carbonate, lead oxide and lead phosphate as the principal components. Scanning electron microscopy/energy-dispersive x-ray spectrometry revealed the crystalline structure within the corrosion product and also showed spatial correlations existed between calcium, iron, lead, oxygen and phosphorus. Elemental profiling, conducted by means of secondary ion mass spectrometry (SIMS) and secondary neutrals mass spectrometry (SNMS) indicated that the corrosion product was not uniform with depth. However, no clear stratification was apparent. Indeed, counts obtained for carbonate, phosphate and oxide were well correlated within the depth range probed by SIMS. SNMS showed relationships existed between carbon, calcium, iron, and phosphorus within the bulk of the scale, as well as at the surface. SIMS imaging confirmed the relationship between calcium and lead and suggested there might also be an association between chloride and phosphorus.
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20

Kim, Jong Myoung, and Wim J. van Ooij. "Study of Rubber-Brass Adhesion Mechanism by Secondary Ion Mass Spectrometry." Rubber Chemistry and Technology 75, no. 2 (May 1, 2002): 199–214. http://dx.doi.org/10.5254/1.3544973.

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Abstract The sulfidization reaction of brass was studied in a squalene model system by Time-of-Flight Secondary Ion Mass Spectrometry, TOF-SIMS. Fragments of the accelerator were observed on the surface of the brass and their concentration changed with reaction time. Copper sulfide formation in the brass panels was confirmed from the TOF-SIMS spectra. The composition of the brass panels could be studied by varying the analysis depth. TOF-SIMS spectra of copper sulfide layer showed a pattern of cluster formation. Cobalt was observed to exist in the sulfide film partly in combination with carbon. Evidence was found of covalent bonding between copper sulfides and squalene.
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21

Groopman, Evan E., Kenneth S. Grabowski, Albert J. Fahey, and Levke Kööp. "Rapid, molecule-free, in situ rare earth element abundances by SIMS-SSAMS." Journal of Analytical Atomic Spectrometry 32, no. 11 (2017): 2153–63. http://dx.doi.org/10.1039/c7ja00294g.

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We present a novel method for rapid and high-sensitivity in situ measurements of the rare earth elements (REEs) by combined secondary ion mass spectrometry and single-stage accelerator mass spectrometry (SIMS-SSAMS).
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22

Cliff, John B., Daniel J. Gaspar, Peter J. Bottomley, and David D. Myrold. "Exploration of Inorganic C and N Assimilation by Soil Microbes with Time-of-Flight Secondary Ion Mass Spectrometry." Applied and Environmental Microbiology 68, no. 8 (August 2002): 4067–73. http://dx.doi.org/10.1128/aem.68.8.4067-4073.2002.

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ABSTRACT Stable C and N isotopes have long been used to examine properties of various C and N cycling processes in soils. Unfortunately, relatively large sample sizes are needed for accurate gas phase isotope ratio mass spectrometric analysis. This limitation has prevented researchers from addressing C and N cycling issues on microbially meaningful scales. Here we explored the use of time-of-flight secondary ion mass spectrometry (TOF-SIMS) to detect 13C and 15N assimilation by individual bacterial cells and to quantify N isotope ratios in bacterial samples and individual fungal hyphae. This was accomplished by measuring the relative abundances of mass 26 (12C14N−) and mass 27 (13C14N− and 12C15N−) ions sputtered with a Ga+ probe from cells adhered to an Si contact slide. TOF-SIMS was successfully used to locate and quantify the relative 15N contents of individual hyphae that grew onto Si contact slides in intimate contact with a model organomineral porous matrix composed of kaolin, straw fragments, and freshly deposited manure that was supplemented with 15NO3 −. We observed that the 15N content of fungal hyphae grown on the slides was significantly lower in regions where the hyphae were influenced by N-rich manure than in regions influenced by N-deficient straw. This effect occurred over distances of tens to hundreds of microns. Our data illustrate that TOF-SIMS has the potential to locate N-assimilating microorganisms in soil and to quantify the 15N content of cells that have assimilated 15N-labeled mineral N and shows promise as a tool with which to explore the factors controlling microsite heterogeneities in soil.
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23

Asher, Sally. "Secondary Ion Mass Spectrcmetry and Related Techniques." Advances in X-ray Analysis 31 (1987): 53–58. http://dx.doi.org/10.1154/s0376030800021832.

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Secondary ion mass spectrometry (SIMS) Is a well established technique for the microcharacterization of solid samples. SIMS is able to detect all the elements in the periodic table, from H to U, and their isotopes. It Is unique among the common surface analytical techniques in its ability to detect H directly. SIMS has high sensitivity, ppm to ppb, for most elements. It has good depth and lateral resolution, 5-10nm and 1-2µ, respectively. Sample preparation is minimal and almost any sample oan be accommodated. In addition, molecular SIMS offers the chance to obtain chemical information about the sample. As a result of these features, SIMS has found applications in many fields; The techniques related to SIMS that will be described at the end of this paper differ primarily in their methods of generating secondary ions. This leads to differences in the information obtained and the types of samples which can be analyzed. This paper will be a brief introduction to the field of SIMS. Several reviews and a recently published text are available in the literature.
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24

Fahey, A. J. "Isotopic Measurements of Inorganic Material by Time-Of-Flight SIMS." Microscopy and Microanalysis 4, S2 (July 1998): 412–13. http://dx.doi.org/10.1017/s1431927600022182.

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Isotopic measurements via Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) have generally not been considered as practical because of the low duty cycle at which ToF-SIMS instruments operate and the corresponding low data rate. The recent discovery of pre-solar material in meteorites has shown that large variations in isotopic ratios (several orders of magnitude for some elements) exist in small (∼1 μm), refractory meteoritic grains. These grains are ideal candidates for ToF-SIMS, which consumes little sample material, compared to dynamic, magneticsector SIMS. ToF-SIMS also allows for parallel detection of all species present in the sample; thus, multiple isotopic systems can be studied in one measurement. As a prerequisite to studying the isotopic composition of meteoritic materials, preliminary determinations of ratios for a number of elements have been made on materials of known isotopic composition. This allows us to investigate problems that may be unique to ToF-SIMS for the measurement of isotopic ratios.
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25

Hane, Y., S. Kimura, Y. Yokoyama, Y. Miyairi, T. Ushikubo, T. Ishimura, N. Ogawa, T. Aono, and K. Nishida. "Reconstruction of temperature experienced by Pacific bluefin tuna Thunnus orientalis larvae using SIMS and microvolume CF-IRMS otolith oxygen isotope analyses." Marine Ecology Progress Series 649 (September 10, 2020): 175–88. http://dx.doi.org/10.3354/meps13451.

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This study aimed to reconstruct temperatures experienced during the larval period by adult Pacific bluefin tuna Thunnus orientalis using high-resolution otolith stable oxygen isotope (δ18O) analysis. A novel otolith sample preparation protocol for secondary ion mass spectrometry (SIMS) analysis developed in this study reduced the background noise of SIMS measurements, enabling analyses of >10 times higher resolution around the otolith core compared to previous studies using conventional isotope ratio mass spectrometry (IRMS). The values obtained from SIMS were compared to those obtained by microvolume δ18Ootolith analysis using micromilling and conventional continuous-flow IRMS (CF-IRMS). There was a systematic offset (average 0.41‰ with SIMS resulting in lower values) most likely caused by matrix effects on SIMS δ18Ootolith values that can be calibrated using a strong linear relationship between SIMS and CF-IRMS measurements (r2 = 0.78, p < 0.001). The core-to-edge δ18Ootolith of 5 Pacific bluefin tuna revealed fine-scale seasonal variations in water temperature agreeing with known migration patterns. In addition, the ambient water temperature experienced during larval stages (about 10-20 d post hatch) estimated from otolith core δ18O ranged from 26.7 to 30.7°C, overlapping with temperatures associated with the occurrence of larval Pacific bluefin tuna. Combining SIMS and microvolume CF-IRMS δ18O otolith analyses offers a microscale examination of fish ecology that is not possible with conventional IRMS techniques. This novel method is particularly useful for understanding the early life history of fish that may be affected by climate change and reconstructing a well-resolved migration history for fish species that have small otoliths and/or narrow growth increments.
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26

Mou, Hong Yan, Shubin Wu, and Pedro Fardim. "Applications of ToF-SIMS in surface chemistry analysis of lignocellulosic biomass: A review." BioResources 11, no. 2 (March 18, 2016): 5581–99. http://dx.doi.org/10.15376/biores.11.2.mou.

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Time-of-flight secondary-ion mass spectrometry (ToF-SIMS) is an advanced surface-sensitive technique that can provide both spectral and imaging information about materials. Recently, ToF-SIMS has been used for advanced studies of lignocellulosic biomass. In the current article, the application of ToF-SIMS to the characterization of the surface chemical composition and distribution of biomass components in lignocelluloses is reviewed. Moreover, extended applications of ToF-SIMS in the study of pretreatments, modification of biomaterials, and enzyme activity of lignocellulosic materials are presented and discussed. Sample preparation prior to ToF-SIMS analysis and subsequent interpretation of results is a critical factor in ensuring reliable results. The focus of this review is to give a comprehensive understanding of and offer new hints about the effects of processing conditions on the surface chemistry of lignocellulosic biomass.
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27

Vidová, Veronika, Michael Volný, Karel Lemr, and Vladimír Havlíček. "Surface analysis by imaging mass spectrometry." Collection of Czechoslovak Chemical Communications 74, no. 7-8 (2009): 1101–16. http://dx.doi.org/10.1135/cccc2009028.

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A review of four MS-based techniques available for molecular surface imaging is presented. The main focus is on the commercially available mass spectrometry imaging techniques: secondary ion mass spectrometry (SIMS), matrix assisted laser desorption ionization mass spectrometry (MALDI-MS), desorption electrospray ionization mass spectrometry (DESI-MS) and laser ablation inductively-coupled plasma mass spectrometry (LA-ICP-MS). A short historical perspective is presented and traditional desorption ionization techniques are also briefly described. The four techniques are compared mainly with respect to their usage for imaging of biological surfaces. MALDI is evaluated as the most successful in life sciences and the only technique usable for imaging of large biopolymers. SIMS is less common but offers superior spatial lateral resolution and DESI is considered to be an emerging alternative approach in mass spectrometry imaging. LA-ICP ionization is unbeatable in terms of limits of detection but does not provide structural information. All techniques are considered extremely useful, representing a new wave of expansion of mass spectrometry into surface science and bioanalysis. A minireview with 121 references.
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28

Huang, Chao, Hao Wang, Jin-Hui Yang, Lie-Wen Xie, Yue-Heng Yang, and Shi-Tou Wu. "Further Characterization of the BB Zircon via SIMS and MC-ICP-MS for Li, O, and Hf Isotopic Compositions." Minerals 9, no. 12 (December 11, 2019): 774. http://dx.doi.org/10.3390/min9120774.

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In this contribution, we report the results for the characterization of the BB zircon, a newly developed zircon reference material from Sri Lanka, via secondary ion mass spectrometry (SIMS) and multiple-collector inductively coupled plasma-mass spectrometry (MC-ICP-MS). The focus of this work was to further investigate the applicability of the BB zircon as a reference material for micro-beam analysis, including Li, O, and Hf isotopes. The SIMS analyses reveal that BB zircon is characterized by significant localized variations in Li concentration and isotopic ratio, which makes it unsuitable as a lithium isotope reference material. The SIMS-determined δ18O values are 13.81‰ ± 0.39‰ (2SD, BB16) and 13.61‰ ± 0.40‰ (2SD, BB40), which, combined with previous studies, indicates that there is no evidence of conspicuous O isotope heterogeneity within individual BB zircon megacrysts. The mean 176Hf/177Hf ratio of BB16 determined by solution MC-ICP-MS is 0.281669 ± 0.000012 (2SD, n = 29) indistinguishable from results achieved by laser ablation (LA)-MC-ICP-MS. Based on the SIMS and MC-ICP-MS data, BB zircon is proposed as a reference material for the O isotope and Hf isotope determination.
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29

Newbury, Dale E. "Ion microscope and microprobe studies of surfaces and interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 856–57. http://dx.doi.org/10.1017/s0424820100150113.

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Secondary ion mass spectrometry (SIMS) in its spatially-resolved forms, the ion microscope and ion microprobe, offers elemental, isotopic, and molecular detection, wide dynamic intensity range spanning major to trace concentrations in the part per million (ppm) range or lower, high lateral spatial resolution in the micrometer to sub-micrometer range, shallow sampling depths to the nanometer range, and the possibility of "microanalytical tomography", the reconstruction of three-dimensional distributions. With this broad range of capabilities, SIMS has special advantages for the characterization of surfaces and interfaces that complement the measurement capabilities of other microanalysis/surface analysis techniques such as electron probe x-ray microanalysis (EPMA), analytical electron microscopy (AEM), Raman and infrared microscopy, scanning Auger electron microanalysis (SAM/AES), and spatially-resolved x-ray photoelectron spectroscopy (XPS). Examples of applications will highlight the special contributions of SIMS to surface/interface characterization studies.1. Surface studiesFigure 1 shows an example of characterization with extreme surface sensitivity. Changes in surface chemistry induced on a passivated silicon surface by scanning tunneling microscopy in air are revealed by time-of-flight secondary ion mass spectrometry (TOF-SIMS).
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30

Grasserbauer, M., and G. Stingeder. "Secondary ion mass spectrometry (SIMS) of silicon." Vacuum 39, no. 11-12 (January 1989): 1077–87. http://dx.doi.org/10.1016/0042-207x(89)91096-8.

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31

Ostrowski, S. G., T. L. Paxon, L. Denault, KP McEvoy, and V. S. Smentkowski. "Preparing Biological Samples for Analysis by High Vacuum Techniques." Microscopy Today 17, no. 2 (March 2009): 48–53. http://dx.doi.org/10.1017/s1551929500054511.

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AbstractTime of flight secondary ion mass spectrometry (ToF-SIMS) and scanning electron microscopy (SEM) provide valuable complementary information about the molecular composition and morphology of biological samples, but both techniques are performed under high vacuum, which is not compatible with hydrated samples. Designing a suitable method to prepare biological (hydrated) samples for high vacuum conditions is important to obtain reliable and scientifically meaningful results from ToF-SIMS and SEM and to enable the routine use of these techniques for characterization. This article will compare freeze-drying and critical point drying for preparing adherent and nonadherent cells for ToF-SIMS and SEM analyses.
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32

Wu, Li, Ling, Yang, Li, Li, Mao, Li, and Putlitz. "Further Characterization of the RW-1 Monazite: A New Working Reference Material for Oxygen and Neodymium Isotopic Microanalysis." Minerals 9, no. 10 (September 26, 2019): 583. http://dx.doi.org/10.3390/min9100583.

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The oxygen (O) and neodymium (Nd) isotopic composition of monazite provides an ideal tracer of metamorphism and hydrothermal activity. Calibration of the matrix effect and monitoring of the external precision of monazite O–Nd isotopes with microbeam techniques, such as secondary ion mass spectrometry (SIMS) and laser ablation-multicollector-inductively coupled plasma-mass spectrometry (LA-MC-ICPMS), require well-characterized natural monazite standards for precise microbeam measurements. However, the limited number of standards available is impeding the application of monazite O–Nd isotopes. Here, we report on the RW-1 monazite as a potential new working reference material for microbeam analysis of O–Nd isotopes. Microbeam measurements by electron probe microanalysis (EPMA), SIMS, and LA-MC-ICPMS at 10–24 µm scales have confirmed that it is homogeneous in both elemental and O–Nd isotopic compositions. SIMS measurements yield δ18O values consistent, within errors, with those obtained by laser fluorination techniques. Precise analyses of Nd isotope by thermal ionization mass spectrometry (TIMS) are consistent with mean results of LA-MC-ICPMS analyses. We recommend δ18O = 6.30‰ ± 0.16‰ (2SD) and 143Nd/144Nd = 0.512282 ± 0.000011 (2SD) as being the reference values for the RW-1 monazite.
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33

Tarolli, Jay G., Benjamin E. Naes, Benjamin J. Garcia, Ashley E. Fischer, and David Willingham. "High resolution isotopic analysis of U-bearing particles via fusion of SIMS and EDS images." Journal of Analytical Atomic Spectrometry 31, no. 7 (2016): 1472–79. http://dx.doi.org/10.1039/c6ja00149a.

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34

Chandra, Subhash. "Correlative microscopy of freeze-dried cells and studies on intracellular calcium stores with imaging secondary ion mass spectrometry (SIMS)." Journal of Analytical Atomic Spectrometry 34, no. 10 (2019): 1998–2003. http://dx.doi.org/10.1039/c9ja00193j.

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35

Welkie, David G. "Non-resonant multi- and single-photon ionization for the chemical characterization of surfaces." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1554–55. http://dx.doi.org/10.1017/s0424820100132406.

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The chemical analysis of surfaces, where the ‘surface’ of a sample refers to the top few monolayers, is most commonly performed using the techniques of Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), and/or electron spectroscopy for chemical analysis (ESCA). For inorganic materials, AES is especially advantageous for quantitative elemental surface analysis at high spatial resolution. At lower spatial resolutions, SIMS generally provides the highest sensitivity, although quantitative interpretation of the results is often difficult or impossible. The primary reason for such difficulties is that the SIMS signal often depends more strongly on the nature of the local chemical environment at the analysis site than on the concentration of the species that is generating the signal. This is commonly referred to as the SIMS ‘matrix effect’.For organic materials, both ESCA and SIMS are used to obtain information on the chemical structure at surfaces. While ESCA can provide unique information on the nature of the chemical bonds between species at a surface, SIMS can provide complementary information on the molecular structures that are present.
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36

Levi-Setti, R., J. M. Chabala, W. Wolbach, and K. K. Soni. "Interfacial reactions in metal matrix composites revealed by imaging SIMS." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 1048–49. http://dx.doi.org/10.1017/s0424820100167706.

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Secondary ion mass spectrometry (SIMS), often in its non-imaging manifestation, is a powerful analytical technique that has found numerous applications in the semiconductor, geochemistry and organic chemistry industries. Given its strengths, which often complement those of traditional electron-probe-based analyses, it is surprising that SIMS has not found a larger clientele among Researchers studying engineered and biological materials. To illustrate the power of high-spatial-resolution SIMS for the investigation of advanced materials, we summarize a series of experiments examining the microstructure and microchemistry of alloys reinforced with ceramic fibers. The goals of this presentation are twofold: first, to notify the scientific community about the capabilities of imaging SIMS; and second, to elevate (hopefully) the study of metal-matrix composites via SIMS from an important but obscure engineering pursuit to a thriving profession. The principal advantages of the SIMS technique for this study are i) polished, bulk samples can be analyzed (i.e. thinning is not required); ii) the distribution of most elements and isotopes can be measured with submicrometer resolution; iii) the signal-to-noise is very good (essentially no background).
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37

Chandra, Subhash. "Imaging transported and endogenous calcium independently at a subcellular resolution: ion microscopy imaging of calcium stable isotopes." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1604–5. http://dx.doi.org/10.1017/s0424820100132650.

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Ion microscopy, based on secondary ion mass spectrometry (SIMS), is a unique isotopic imaging technique. The use of stable isotopes as tracers and their SIMS localization at a subcellular resolution has introduced a significant new approach for molecular localization and ion transport studies. A molecule of interest may be tagged with stable 2H, 13C, 15N, etc. and imaged with SIMS for its intracellular location. Stable isotopes of physiologically important elements such as calcium and magnesium provide excellent tracers for ion transport imaging studies with SIMS. in a recent study with 44Ca, the brush border region in the small intestine was observed to be the main barrier for calcium transport from the intestinal lumen to the lamina propria region in chickens suffering from Rickets, a vitamin D-deficiency condition.An example of the use of 44Ca stable isotope for imaging calcium-calcium exchange between the intracellular and extracellular calcium with SIMS is shown in figure 1. 3T3 cells were grown on high purity germanium chips to about 80% confluency.
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38

Corcoran, S. F. "Applications of SIMS to electronic materials and devices." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1682–83. http://dx.doi.org/10.1017/s0424820100133047.

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Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.
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39

Kia, Alireza M., Nora Haufe, Sajjad Esmaeili, Clemens Mart, Mikko Utriainen, Riikka L. Puurunen, and Wenke Weinreich. "ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition." Nanomaterials 9, no. 7 (July 19, 2019): 1035. http://dx.doi.org/10.3390/nano9071035.

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For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.
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40

Hofmann, Jan P., Marcus Rohnke, and Bert M. Weckhuysen. "Recent advances in secondary ion mass spectrometry of solid acid catalysts: large zeolite crystals under bombardment." Phys. Chem. Chem. Phys. 16, no. 12 (2014): 5465–74. http://dx.doi.org/10.1039/c3cp54337d.

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Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is used for the characterization of heterogeneous catalysts. Large zeolite ZSM-5 crystals are discussed as a showcase system for solid acid catalysts and studied in high-resolution mass spectrometry, imaging, and sputter-depth profiling modes.
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41

Zheng, Peiming, Takaaki Ito, Dan Aoki, Saori Sato, Masato Yoshida, Yuzou Sano, Yasuyuki Matsushita, Kazuhiko Fukushima, and Kumi Yoshida. "Determination of inorganic element distribution in the freeze-fixed stem of Al2(SO4)3-treated Hydrangea macrophylla by TOF-SIMS and ICP-AES." Holzforschung 71, no. 6 (June 27, 2017): 471–80. http://dx.doi.org/10.1515/hf-2016-0149.

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Abstract To elucidate the effect of soil conditions on the in planta distribution of inorganic elements, an aluminium (Al)-tolerant plant, Hydrangea macrophylla, was cultivated with the addition of Al ion to soils. Freeze-dried stems from the plants were analysed by time-of-flight secondary ion mass spectrometry (dry-TOF-SIMS). Freeze-fixed stems of the plants were analysed by cryo-TOF-SIMS. The inorganic metal content was quantified by inductively coupled plasma atomic absorption spectrometry (ICP-AES). The dry- and cryo-TOF-SIMS mapping analyses showed that in the native sample, inorganic elements are mainly localised in the cortex and pith. Al-treatment [i.e. Al2(SO4)3 administration to the soil] altered the distribution and content of inorganic metals. The actual amount of inorganic elements quantified by ICP-AES showed that Al-treatment on the soil increased the amounts of Na, Mg, Al and Ca and decreased that of K in the stem. The secondary ion counts of inorganic elements in freeze-dried and -fixed samples, determined by dry-/cryo-TOF-SIMS measurements, showed similar variations as that observed with ICP-AES measurements. These results are interpreted as that Al-treatment altered the distribution and amount of inorganic elements in the stems of Al-tolerant H. macrophylla plants.
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42

Agüi-Gonzalez, Paola, Sebastian Jähne, and Nhu T. N. Phan. "SIMS imaging in neurobiology and cell biology." Journal of Analytical Atomic Spectrometry 34, no. 7 (2019): 1355–68. http://dx.doi.org/10.1039/c9ja00118b.

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43

Shimizu, K., B. J. Flinn, P. C. Wong, and KAR Mitchell. "Article." Canadian Journal of Chemistry 76, no. 12 (December 1, 1998): 1796–99. http://dx.doi.org/10.1139/v98-194.

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Secondary ion mass spectrometry (SIMS) has been used to guide the search for an oxidation procedure that can produce a thin and relatively sharp oxide layer on macroscopic zirconium. A new preparation based on dip coating in H2O2 solution is indicated to be suitable for this purpose. SIMS further indicates that the oxide interface, for such a prepared sample, shows substantial degradation when it is heated in H2 gas at 300°C. The presence of H appears to facilitate O migration into the metallic region, an observation that supplements those made previously on oxidized thin-film samples of zirconium prepared by deposition under ultrahigh-vacuum conditions.Key words: secondary ion mass spectrometry, interfacial reactivity, oxidized zirconium.
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44

Sivabharathy, M., M. Jeyanthinath, Lasse Vines, Bengt Gunnar Svensson, and K. Ramachandran. "SIMS Study of 30keV H+ Ion-Implanted n-GaAs." Defect and Diffusion Forum 319-320 (October 2011): 181–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.319-320.181.

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A detailed analysis on the depth profiles of 30 keV H+ ion implanted n-GaAs for various doses from 1014 to 1017 cm-2 was carried by using Secondary ion mass spectrometry (SIMS), to identify the buried amorphous layer. The results are correlated with Raman and XRD strain parameter studies. Various thermal parameters are computed for the 30 keV H+ ion implanted n-GaAs and SIMS study reported for the first time.
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45

Ateacha, Derick N., Ulrike Koch, and Carsten Engelhard. "Direct analysis of alkaloids in natural Cinchona bark and commercial extracts using time-of-flight secondary ion mass spectrometry." Analytical Methods 10, no. 9 (2018): 950–58. http://dx.doi.org/10.1039/c7ay02822a.

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46

Pang, Wei Kong, It Meng Low, and J. V. Hanna. "Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS." Key Engineering Materials 434-435 (March 2010): 169–72. http://dx.doi.org/10.4028/www.scientific.net/kem.434-435.169.

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The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.
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47

Pachuta, Steven J. "Industrial applications of TOF-SIMS imaging." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 1040–41. http://dx.doi.org/10.1017/s0424820100167664.

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Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has in recent years become a useful tool for surface analysis in industrial laboratories. All elements and isotopes, as well as many molecular entities, can be detected by SIMS, with most of the signal coming from the outer 10 - 20 Å of the surface. The initial penetration of TOF-SIMS into industry was as an improvement over existing quadrupole instruments, with higher mass range, mass resolution, and sensitivity. The coupling of TOF-SIMS with high brightness liquid metal ion sources greatly expanded the applicability of the technique, making chemical imaging of the outermost monolayers of a surface a routine experiment.Several examples will be presented of TOF-SIMS imaging applied to real-world materials encountered in an industrial analytical laboratory. All results were obtained from a PHI-Evans TFS series instrument equipped with an FEI two-lens 69Ga+ liquid metal ion gun (LMIG). When operated at 25 keV beam energy, a primary ion beam diameter of 2500 Å in continuous mode, and 1-2 μm in pulsed mode, can routinely be obtained.
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48

Odom, Robert W. "Molecular surface analysis by TOF-SIMS." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1556–57. http://dx.doi.org/10.1017/s0424820100132418.

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Time-of-flight secondary ion mass spectrometry (TOF-SIMS) performs surface sensitive analysis of the elemental and molecular composition of solids. TOFSIMS is a relatively new embodiment of static secondary ion mass spectrometry (SSIMS) in which the dose of primary ions incident on the surface is typically less than 1012 ions/cm2. Since typical solid surfaces have an atomic density of 1015 atoms/cm2, this primary ion dose nominally removes less than 0.1% of a monolayer. Hence, SIMS analyses performed under these static conditions represent near surface analysis in which secondary ions are produced from the top few monolayers of the surface. The actual sampling depth is determined by the primary ion momentum, angle of incidence and chemistry of the surface. Since low dose primary ions cause minimal perturbation of the chemistry of the solid surface, SSIMS analyses often produce molecular or pseudo-molecular ions characteristic of the chemical composition of the surface. Thus, molecular ions or structurally significant fragment ions are often observed in SSIMS analyses of surfaces containing inorganic and organic residues, polymers surfaces, coatings, and biological materials such as tissues and membranes.
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49

Lodding, A. "SIMS of Biomineralized Tissues: Present Trends and Potentials." Advances in Dental Research 11, no. 4 (November 1997): 364–79. http://dx.doi.org/10.1177/08959374970110040101.

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The technique of dynamic secondary ion mass spectrometry (SIMS) has, during the 1980s, become a firmly established tool in the microanalytical and microstructural characterization of dental hard tissues. SIMS has proved to be outstandingly suited for charting the distributions of most elements, even at extremely low concentrations, in tooth and bone materials. In-depth concentration profiles as well as surface distribution maps of elements have been recorded with excellent (sub-micron) morphologic resolution. In spite of documented success, only relatively few teams, in a handful of countries, are presently engaged, to any significant extent, in conducting tooth or bone research by the application of SIMS. For dental-medical-surgical laboratories, a partial reason for non-communication is a lack of information about SIMS and its particular assets. Another reason may be connected with an essentially groundless reputation, among non-specialists, of SIMS being an exclusive and expensive technique. Among SIMS laboratories, on the other hand, the inertia in tackling biomineralization is partly due to some particular artifacts of analysis, hitherto not generally known and controlled. The present paper briefly sketches the chief principles of modem SIMS, emphasizing factors of special relevance in the characterization of biomineralized tissues. Examples of recent applications are provided. Present procedures and their limitations are discussed, especially with regard to elemental quantification and imaging. Suggestions for relatively simple modifications to existing routines are offered with the aim of enhancing the ease and availability of SIMS in odontological and surgical research.
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50

Stevie, F. A., S. W. Downey, S. Brown, T. Shofner, M. Decker, T. Dingle, and L. Christman. "Microscale Elemental Imaging of Semiconductor Materials Using Focused Ion Beam Sims." Microscopy and Microanalysis 4, S2 (July 1998): 650–51. http://dx.doi.org/10.1017/s1431927600023370.

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The semiconductor industry demands elemental information from ever smaller regions. Two types of information in demand are two dimensional dopant profiles for the MOS transisitor and identification of particles as small as 30 nm diameter. The work of Levi-Setti and others resulted in liquid metal ion source (LMIS) instruments that provided secondary ion mass spectrometry (SIMS) images using Ga+ beams with 20 nm lateral resolution. It is now possible to purchase focused ion beam (FIB) systems with 5 nm beam capability and SIMS detection.The application of LMIS SIMS to meet semiconductor demands has been pursued in our laboratory with a FEI-800 FIB. SIMS imaging of semiconductor patterns after etch has shown the ability to identify boron and carbon contamination. Figure 1 shows boron in a comb structure after a BC13 etch. The boron can be shown to be removed by a cleaning step.
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