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Journal articles on the topic 'Stockbarger method'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

Jin Kim, Dong, Joon-Ho Oh, Han Soo Kim, et al. "Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications." Materials Science-Poland 34, no. 2 (2016): 297–301. http://dx.doi.org/10.1515/msp-2016-0034.

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AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

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2

A., Chandrasekharan K., and Kunjomana A. G. "Growth of Antimony Selenide Crystals by Bridgman-Stockbarger Method." Mapana - Journal of Sciences 8, no. 2 (2009): 1–6. http://dx.doi.org/10.12723/mjs.15.1.

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Single crystals of antimony selenide were grown from melt by the Bridgman Stockbarger method. X-ray powder diffraction analysis was carried out to determine the lattice parameters of the grown samples.The morphology and chemical analysis of cleavage planes were investigated using SEM and EDAX. The microhardness studies were done by using a Vickers hardness tester. The correlation of energy gap and microhardness has also been investigated.

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3

Hu, Mingyuan, Yan Wang, Zhenyu You, et al. "Influence of codoped Gd3+ ions on the spectroscopic site symmetry of Dy3+ ions in LaF3 single crystals." Journal of Materials Chemistry C 7, no. 43 (2019): 13432–39. http://dx.doi.org/10.1039/c9tc02951f.

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4

Shi, Minli, and Jiayue Xu. "Large size LaF3:Eu:Ca crystal grown by Bridgman–Stockbarger method." Materials Letters 58, no. 29 (2004): 3823–25. http://dx.doi.org/10.1016/j.matlet.2004.07.037.

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5

Lee, Woo Gyo, Yong Kyun Kim, Jong Kyung Kim, Nicolai Starzhinskiy, Vladimir Ryzhikov, and Boris Grinyov. "Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method." Journal of Nuclear Science and Technology 45, sup5 (2008): 579–81. http://dx.doi.org/10.1080/00223131.2008.10875921.

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6

Distanov, V. E., B. G. Nenashev, A. G. Kirdyashkin, and M. G. Serboulenko. "Proustite single-crystal growth by the Bridgman–Stockbarger method using ACRT." Journal of Crystal Growth 235, no. 1-4 (2002): 457–64. http://dx.doi.org/10.1016/s0022-0248(01)01933-9.

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7

USHASREE, P. M., T. MIDORIKAWA, K. KOMATSU, and T. KAINO. "GROWTH OF 4-(4-DIMETHYLAMINOSTYRYL)-1-METHYLPYRIDINIUM TOSYLATE (DAST) MIXED SINGLE CRYSTAL BY BRIDGMAN–STOCKBARGER METHOD." Journal of Nonlinear Optical Physics & Materials 13, no. 03n04 (2004): 359–66. http://dx.doi.org/10.1142/s0218863504001980.

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4-(4-dimethylaminostyryl)-1-methylpyridinium tosylate (DAST) is a very promising organic nonlinear optical (NLO) material for future optoelectronic and nonlinear optical applications, though it cannot be grown from molten state. Hence, a derivative of DAST was synthesized and mixed with DAST. The melting point of the mixed crystal decreased drastically, making it possible to grow a single crystal from molten state. In the present investigation, a mixed single crystal of DAST has been grown from molten state by vertical Bridgman–Stockbarger method.

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8

Lamuta, Caterina, Anna Cupolillo, Antonio Politano, et al. "Nanoindentation of single-crystal Bi2Te3topological insulators grown with the Bridgman-Stockbarger method." physica status solidi (b) 253, no. 6 (2016): 1082–86. http://dx.doi.org/10.1002/pssb.201552760.

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9

Balint, A. M., M. Mihailovici, D. G. Bãltean, and St Balint. "Interface structure in the growth of semiconductor crystals using the Bridgman–Stockbarger method." Thin Solid Films 380, no. 1-2 (2000): 108–10. http://dx.doi.org/10.1016/s0040-6090(00)01480-2.

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10

Echizen, Y., H. Tanaka, S. Adachi, T. Ishigaki, and S. Kishida. "Bi2Sr2CaCu2Oy single crystal growth in Bridgman–Stockbarger method using different oxygen partial pressure." Physica C: Superconductivity and its Applications 445-448 (October 2006): 455–58. http://dx.doi.org/10.1016/j.physc.2006.04.066.

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11

Murayama, Hitoshi, Kenichi Muta, Hideo Takezoe, and Atsuo Fukuda. "Control of Organic-Crystal Orientation in Glass Capillary by Modified Bridgman-Stockbarger Method." Japanese Journal of Applied Physics 31, Part 2, No. 6A (1992): L710—L712. http://dx.doi.org/10.1143/jjap.31.l710.

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12

Ivanov, B. G., V. M. Reiterov, and A. Turkboev. "Optimizing the temperature fields when crystals are grown by the Bridgman-Stockbarger method." Journal of Optical Technology 66, no. 5 (1999): 455. http://dx.doi.org/10.1364/jot.66.000455.

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13

Hsu, H. P., D. Y. Lin, C. W. Chen, Y. F. Wu, K. Strzałkowski, and P. Sitarek. "Optical characterizations of Cd1-XZnXTe mixed crystals grown by vertical Bridgman-Stockbarger method." Journal of Crystal Growth 534 (March 2020): 125491. http://dx.doi.org/10.1016/j.jcrysgro.2020.125491.

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14

Aguiar, M. R., and R. Caram. "Directional solidification of a Sn-Se eutectic alloy using the Bridgman-Stockbarger method." Journal of Crystal Growth 166, no. 1-4 (1996): 398–401. http://dx.doi.org/10.1016/0022-0248(95)00524-2.

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15

Strzhemechny, Mikhail A., Vyacheslav N. Baumer, Anatoli A. Avdeenko, Oleg S. Pyshkin, Roman V. Romashkin, and Lyubov M. Buravtseva. "Polymorphism of 4-bromobenzophenone." Acta Crystallographica Section B Structural Science 63, no. 2 (2007): 296–302. http://dx.doi.org/10.1107/s0108768106054334.

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A combination of single-crystal and powder X-ray diffractometry was used to study the structure of two polymorphs of 4-bromobenzophenone over the temperature range from 100 to 300 K. One of the polymorphs of the title compound was known previously and its structure has been determined at room temperature [Ebbinghaus et al. (1997). Z. Kristallogr. 212, 339–340]. Two crystal growth methods were employed, one of which (a modification of the Bridgman–Stockbarger technique) resulted in single crystals of a previously unknown structure. The basic physical properties of the stable polymorph are: growth method, from 2-propanol solutions or gradient sublimation; space group, monoclinic P21/c; melting point, T m = 355.2 K; X-ray density (at 100 K), Dx = 1.646 g cm−3. The same properties of the metastable polymorph (triclinic P\overline 1 ) are: growth method, modified Bridgman–Stockbarger method; X-ray density (at 100 K), Dx = 1.645 g cm−3; T m = 354 K. Thermograms suggest that the melting of the metastable form is accompanied by at least a partial crystallization presumably into the monoclinic form; the transformation is therefore monotropic. Analysis of short distances in both polymorphs shows that numerous weak hydrogen bonds of the C—H...π type ensure additional stabilization within the respective planes normal to the longest dimension of the molecules. The strong temperature dependence of the lattice constants and of the weak bond distances in the monoclinic form suggest that the weak bond interactions might be responsible for both the large thermal expansion within plane bc and the considerable thermal expansion anisotropy.

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16

Petrova, D., O. Pavloff, and P. Marinov. "Optical quality and laser characteristics of YAG:Nd crystals grown by the Bridgman-Stockbarger method." Journal of Crystal Growth 99, no. 1-4 (1990): 841–44. http://dx.doi.org/10.1016/s0022-0248(08)80037-1.

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17

Kozlov, V., H. Andersson, V. Gostilo, et al. "Improvements and problems of Bridgman–Stockbarger method for fabrication of TlBr single crystal detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 607, no. 1 (2009): 126–28. http://dx.doi.org/10.1016/j.nima.2009.03.126.

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18

Barvinschi, F., A. Stanculescu, and F. Stanculescu. "Heat transfer process during the crystallization of benzil grown by the Bridgman–Stockbarger method." Journal of Crystal Growth 317, no. 1 (2011): 23–27. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.028.

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19

Ramachandran, K., Arumugam Raja, V. Sivasubramani, RO MU Jauhar, Muthu Senthil Pandian, and P. Ramasamy. "Methyl 4-aminobenzoate (MAB) single crystal grown by Bridgman - Stockbarger method for optical applications." Optical Materials 113 (March 2021): 110891. http://dx.doi.org/10.1016/j.optmat.2021.110891.

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20

Trubaieva, O. G., A. I. Lalayants, and M. A. Chaika. "Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content." Ukrainian Journal of Physics 63, no. 1 (2018): 33. http://dx.doi.org/10.15407/ujpe63.01.0033.

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ZnSxSe1−x bulk crystals were grown by the Bridgman–Stockbarger method. The transmittance of different samples in the range from 67% to 56% at la = 1100 nm (for 4-mm samples) indicates a high optical quality of the crystals. No new states were revealed at the sulfur incorporation, and the band gap depends on the composition. The optical band gap of ZnSxSe1−x bulk crystals varies from 2.59 to 2.78 eV for direct transitions and from 2.49 to 2.70 eV for indirect transitions.

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21

Bilanych, V. S., K. V. Skubenych, M. I. Babilya, A. I. Pogodin, and I. P. Studenyak. "The Effect of Isovalent Cation Substitution on Mechanical Properties of (CuxAg1–x)7SiS5I Superionic Mixed Single Crystals." Ukrainian Journal of Physics 65, no. 5 (2020): 453. http://dx.doi.org/10.15407/ujpe65.5.453.

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(CuxAg1−x)7SiS5I mixed crystals were grown by the Bridgman–Stockbarger method. The microhardness measurements are carried out at room temperature using a Vickers indenter. The compositional dependence of the microhardness is studied. The dependence of the microhardness on the depth of imprint is analyzed in the model of geometrically necessary dislocations. The indentation size effect is observed. It is established that the microhardness of (CuxAg1−x)7SiS5I mixed crystals decreases at the substitution of Cu atoms by Ag atoms.

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22

Huseynov, Jahangir, Rena Mamedova, Ibrahim Abbasov, Dunyameddin Askerov, and Khaver Sadig. "High-Temperature X-Ray Diffraction and Fluorescence Spectra of SnSe Single Crystal." Proceedings of the Latvian Academy of Sciences. Section B. Natural, Exact, and Applied Sciences. 73, no. 6 (2019): 519–24. http://dx.doi.org/10.2478/prolas-2019-0079.

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Abstract The temperature dependence of unit cell parameters was studied using high-temperature X-ray diffraction and the coefficient of thermal expansion of SnSe single crystal was determined. Fluorescence spectra of SnSe single crystal grown by the Bridgman-Stockbarger method were examined using a Cary Eclipse spectrophotometer at room temperature in the wavelength range 200–900 nm. When the samples were irradiated by a pulse at a wavelength of 230 nm, the fluorescence spectra exhibited maxima at wavelengths 313.07, 423.03, 458.93, 495.07, and 530.00 nm.

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23

Kim, Kyoung Jin, Yuki Furuya, Kei Kamada, et al. "Growth and Scintillation Properties of Directionally Solidified Ce:LaBr3/AEBr2 (AE = Mg, Ca, Sr, Ba) Eutectic System." Crystals 10, no. 7 (2020): 584. http://dx.doi.org/10.3390/cryst10070584.

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Ce-doped LaBr3/AEBr2 (AE = Mg, Ca, Sr, Ba) eutectics were grown using the Bridgman–Stockbarger (BS) method in quartz ampoules. The eutectics (AE = Mg and Ca) showed optical transparency like optical fiber bundles. A grown Ce-doped LaBr3/MgBr2 eutectic shows a 355 nm emission ascribed to Ce3+ 4f-5d transition under X-ray excitation. The smaller the ionic size of AE, the higher the light yield of the sample was. The light yield of Ce:LaBr3/MgBr2 was 34,300 photon/MeV, which is higher than Ce:LYSO standard. Scintillation decay time under 662 keV gamma-ray excitation was 18.8 ns.

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24

DESAI, C. F., P. H. SONI, S. R. BHAVSAR, and R. C. SHAH. "GROWTH AND DISLOCATION ETCHING OF Sb0.2Bi1.8Te3 SINGLE CRYSTALS." Surface Review and Letters 06, no. 02 (1999): 177–81. http://dx.doi.org/10.1142/s0218625x99000202.

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Sb 0.2 Bi 1.8 Te 3 single crystals have been grown by the zone melting and Bridgman–Stockbarger methods. The freezing interface temperature gradients of 90°C/cm and 45°C/cm, respectively, have been found to yield the best quality crytals obtainable at the growth rate of 0.35 cm/h. The crystals have been characterized by the powder XRD technique. The crystals grown by the zone melting method have been observed to exhibit certain typical features on their top free surfaces. A new dislocation etchant has been developed to give reproducible etch-pitting on the cleavage surface. Tests of this dislocation etchant have been carried out successfully and the etchant has been used to obtain dislocation density in the crystals.

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25

Berdnikov, V. S., M. V. Filippova, B. A. Krasin, and A. I. Nepomnyashchikh. "Numerical simulation of thermal-physical processes accompanying multisilicon crystal growing by the method of Bridgman — Stockbarger." Thermophysics and Aeromechanics 13, no. 2 (2006): 257–74. http://dx.doi.org/10.1134/s0869864306020089.

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26

Krivandina, E. A., Z. I. Zhmurova, and B. P. Sobolev. "On the variation of the impurity composition in LaF3 crystals grown by the Bridgman-Stockbarger method." Crystallography Reports 46, no. 4 (2001): 687–89. http://dx.doi.org/10.1134/1.1387138.

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27

Кажукаускас, В., Р. Гарбачаускас та С. Савицки. "Электрически активные состояния захвата и переноса заряда, обусловливающие медленную рекомбинацию в кристаллах бромида таллия при низких температурах". Физика и техника полупроводников 52, № 2 (2018): 171. http://dx.doi.org/10.21883/ftp.2018.02.45439.8672.

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AbstractTlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.

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28

Асадов, С. М., та С. Н. Мустафаева. "Диэлектрические потери и перенос заряда в легированном сурьмой монокристалле TlGaS-=SUB=-2-=/SUB=-". Физика твердого тела 60, № 3 (2018): 495. http://dx.doi.org/10.21883/ftt.2018.03.45551.266.

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AbstractEffect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS_2-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa_0.995Sb_0.005S_2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS_2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.

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29

Savchenko, K. V., and V. V. Shchennikov. "A phase transition in Ga2Se3 under high pressure." Canadian Journal of Physics 72, no. 9-10 (1994): 681–82. http://dx.doi.org/10.1139/p94-088.

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Ga2Se3 crystals with an excess of Se were grown by the Bridgman–Stockbarger method and had a defect zinc blende structure with a0 = 5.42 Å [Formula: see text] (1 Å = 10−10 m). At room temperature the resistivity was equal to (4.5 ± 1.5) × 1011 Ω cm, the thermoelectric power was (−1.1 ± 0.1) mV K−1 and the Vickers microhardness was (357 ± 9) kg mm−2. The gamma-induced conductivity was measured in the gamma-emitting power range of 3–340 rad s−1. Pressure dependencies of electrical resistance and thermoelectric power at room temperature allowed us to determine a phase transition of the semiconductor–semiconductor type at 14.2 GPa.

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30

Mitin, K. A., V. S. Berdnikov, and S. A. Kislitsin. "The dependence of the crystallization front shape on the heat exchange regime in the Bridgman-Stockbarger method." Computational Continuum Mechanics 12, no. 1 (2019): 106–16. http://dx.doi.org/10.7242/1999-6691/2019.12.1.10.

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31

Ramachandran, K., Arumugam Raja, N. Lingamurthy, Muthu Senthil Pandian, P. Ramasamy, and S. Venugopal Rao. "Structural, optical, thermal and nonlinear optical properties of Triphenylamine (TPA) single crystal grown by Bridgman – Stockbarger method." Chemical Physics Letters 742 (March 2020): 137128. http://dx.doi.org/10.1016/j.cplett.2020.137128.

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32

Shen, J., D. K. Aidun, L. L. Regel, and W. R. Wilcox. "Etch pits originating from precipitates in CdTe and Cd1−xZnxTe grown by the vertical Bridgman-Stockbarger method." Journal of Crystal Growth 132, no. 1-2 (1993): 351–56. http://dx.doi.org/10.1016/0022-0248(93)90283-3.

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33

Jin, Moon-Seog, Jae-Yeol Kim, Koung-Suk Kim, Sung-Hyu Choe, and Ho-Jun Song. "Composition and temperature dependence of optical energy gaps of TlGa1−xSbxS2 single crystals." Journal of Materials Research 18, no. 3 (2003): 620–23. http://dx.doi.org/10.1557/jmr.2003.0081.

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TlGa1−xSbxS2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) single crystals were grown using the Bridgman–Stockbarger method. The direct energy gaps of the single crystals were found to be 2.586, 2.459, 2.344, 2.228, 2.119, and 1.987 eV for the composition x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, respectively, at 20 K. The indirect energy gaps were found to be 2.479, 2.357, 2.232, 2.118, 1.983, and 1.871 eV for the composition x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, respectively, at 20 K. The optical energy gaps decreased linearly with increasing composition x. The temperature dependence of the optical energy gaps for each of the single crystals was well fitted with the Varshni equation.

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34

Мустафаева, С. Н., С. М. Асадов та Э. М. Керимова. "Диэлектрические свойства и электропроводность легированного серебром монокристалла TlGaS-=SUB=-2-=/SUB=-". Физика и техника полупроводников 52, № 2 (2018): 167. http://dx.doi.org/10.21883/ftp.2018.02.45438.8517.

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AbstractThe effect of silver ions (2 mol %) on the dielectric properties and electrical conductivity of TlGaS_2 single crystals grown by the Bridgman–Stockbarger method is investigated. The experimental results of studying the frequency dispersion of the dielectric coefficients of TlGaS_2 single crystals (2 mol % Ag) makes it possible to establish the nature of dielectric losses and the charge-transfer mechanism, to evaluate the density of states near the Fermi level, the spread of states, the average hopping time and length, and the concentration of deep traps responsible for ac conductivity. The Ag doping of the TlGaS_2 single crystals results in an increase in the density of states near the Fermi level and in a decrease in the average hopping time and length.

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35

Trubaieva, O. G., M. A. Chaika, and O. V. Zelenskaya. "Mixed ZnSxSe1–x Crystals as a Possible Material for Alpha-Particle and X-ray Detectors." Ukrainian Journal of Physics 63, no. 6 (2018): 546. http://dx.doi.org/10.15407/ujpe63.6.546.

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A possibility to use ZnSxSe1−x as a material for the detection of X-rays and alpha particles has been studied. The influence of the sulfur content on the properties of bulk ZnSxSe1−x crystals is analyzed. Six specimens with different component contents were grown, by using the Bridgman–Stockbarger method: ZnS0.07Se0.93, ZnS0.15Se0.85, ZnS0.22Se0.78, ZnS0.28Se0.72, ZnS0.32Se0.68, and ZnS0.39Se0.61. The intensity of X-ray luminescence spectra of ZnSxSe1−x crystals is found to increase with the sulfur content and reaches a maximum for the composition ZnS0.22Se0.78. The luminescence light yield of mixed ZnSxSe1−x crystals is higher than that of commercial ZnSe(Te) and ZnSe(Al) crystals. The advantages of mixed crystals based onZnSxSe1−x over the ZnS(Te) and ZnSe(Al) crystals have been discussed.

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36

Pescherova, S. M., L. A. Pavlova, A. I. Nepomnyaschikh, I. A. Eliseev, and Yu V. Sokolnikova. "Specific Features of Microinclusion Formation in Multisilicon Crystals Grown from Refined Metallurgical Silicon by the Bridgman–Stockbarger Method." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, no. 4 (March 15, 2015): 12. http://dx.doi.org/10.17073/1609-3577-2012-4-12-17.

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37

TOMOSHIGE, Ryuichi, Tomoaki KUDAMATSU, Masao KODAMA, and Toru MATSUSHITA. "Preparation of (K, Rb)Cl and (Rb, Cs)Cl Single Crystals by the Stockbarger Method and Their Properties." Journal of the Ceramic Society of Japan 106, no. 1237 (1998): 867–72. http://dx.doi.org/10.2109/jcersj.106.867.

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38

Distanov, V. E., and A. G. Kirdyashkin. "The modelling of heat transfer in the melt volume during crystal growth by the Stockbarger method using ACRT." Journal of Crystal Growth 207, no. 3 (1999): 226–31. http://dx.doi.org/10.1016/s0022-0248(99)00367-x.

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39

Shamirzaev, T. S., A. I. Nepomnyashchikh, B. A. Krasin, et al. "Effect of Sc and Yb doping on electrical and luminescence properties of silicon produced by the Stockbarger method." Physics of the Solid State 50, no. 9 (2008): 1736–39. http://dx.doi.org/10.1134/s1063783408090291.

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40

Gorgol, Marek, Radosław Zaleski, Agnieszka Kierys, Daniel Kamiński, Karol Strzałkowski, and Kamil Fedus. "Positron lifetime spectroscopy of defect structures in Cd1–x Zn x Te mixed crystals grown by vertical Bridgman–Stockbarger method." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 77, no. 4 (2021): 515–25. http://dx.doi.org/10.1107/s2052520621004728.

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Positron annihilation lifetime spectroscopy was used to examine grown-in defects in Cd1–x Zn x Te mixed crystals as a function of Zn content (x = 0, 0.07, 0.11, 0.49, 0.9, 0.95, 1) and measuring temperature. All samples were prepared using the high-pressure modified vertical Bridgman–Stockbarger method. The crystal structure and material phase were characterized by X-ray diffraction. The positron lifetime spectra reveal the presence of both open volumes and shallow traps regardless of the sample composition. In particular, both average and bulk lifetimes are found to be much higher in ternary alloys (CdZnTe) than those in binary systems (CdTe and ZnTe). This originates from distinct differences in average electron densities and the nature of open-volume defects between binary and ternary samples. Competition in positron trapping with increasing Zn content is observed between defects characteristic for both structural systems. Moreover, a clear correlation is shown between defects and the lattice thermal conductivity of studied samples. The applicability of the positron trapping model to CdTe-based materials is discussed.

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41

Rey-García, Francisco, Rafael Ibáñez, Luis Alberto Angurel, Florinda M. Costa, and Germán F. de la Fuente. "Laser Floating Zone Growth: Overview, Singular Materials, Broad Applications, and Future Perspectives." Crystals 11, no. 1 (2020): 38. http://dx.doi.org/10.3390/cryst11010038.

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The Laser Floating Zone (LFZ) technique, also known as Laser-Heated Pedestal Growth (LHPG), has been developed throughout the last several decades as a simple, fast, and crucible-free method for growing high-crystalline-quality materials, particularly when compared to the more conventional Verneuil, Bridgman–Stockbarger, and Czochralski methods. Multiple worldwide efforts have, over the years, enabled the growth of highly oriented polycrystalline and single-crystal high-melting materials. This work attempted to critically review the most representative advancements in LFZ apparatus and experimental parameters that enable the growth of high-quality polycrystalline materials and single crystals, along with the most commonly produced materials and their relevant physical properties. Emphasis will be given to materials for photonics and optics, as well as for electrical applications, particularly superconducting and thermoelectric materials, and to the growth of metastable phases. Concomitantly, an analysis was carried out on how LFZ may contribute to further understanding equilibrium vs. non-equilibrium phase selectivity, as well as its potential to achieve or contribute to future developments in the growth of crystals for emerging applications.

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Magesh, M., P. Vijayakumar, A. Arunkumar, G. Anandha Babu, and P. Ramasamy. "Investigation of structural and optical properties in LiInS2 single crystal grown by Bridgman-Stockbarger method for mid IR laser application." Materials Chemistry and Physics 149-150 (January 2015): 224–29. http://dx.doi.org/10.1016/j.matchemphys.2014.10.010.

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Кислицын, Степан Александрович, Константин Александрович Митин, and Владимир Степанович Бердников. "Numerical simulation of heat transfer processes during single crystal growth by the Bridgman - Stockbarger method in fixed and rotating crucibles." Вычислительные технологии, no. 1(26) (April 2, 2021): 21–32. http://dx.doi.org/10.25743/ict.2021.26.1.002.

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Численно методом конечных элементов исследованы процессы кристаллизации кремния в плоскодонных неподвижных и равномерно вращающихся графитовых цилиндрических тиглях в режимах сопряженного конвективного теплообмена. Процессы кристаллизации кремния изучены при фиксированной скорости опускания тигля в холодную зону и различных скоростях его вращения. Опускание тигля имитировалось перемещением точки излома в распределении температуры на внешней стороне стенок тигля. Точка излома - это граница перехода от нагретого до начальной температуры участка стенки к области с заданным градиентом температуры. Использованы адаптивные сетки на треугольниках, отслеживающие положение фронта кристаллизации на каждом временном шаге. Использован пакет программ собственной разработки. The dependence of both spatial shape and intensity of the convective flow of silicon melt during the growth of a silicon ingot by the Bridgman-Stockbarger method was studied numerically by the finite element method. Stationary and uniformly rotating graphite crucible in conjugate convective heat transfer regines were examined. The simulation was carried out on the basis of dimensionless system of equations for the thermogravitational convection in the Boussinesq approximation using the bipolar approach. In the mixed convection regine, the system of equations was augmented by an equation for the azimuthal velocity. Adaptive grids on triangles were used to track the position of the crystal-melt interface at each time step. The calculations were carried out at a constant rate of lowering the crucible from the hot to the cold zone, equal to 2.81 cm/h, and at a constant temperature gradient equal to 35 K/cm. Lowering the crucible was simulated by moving the inflection point in the temperature distribution on the outside of the crucible walls. The range of angular velocities of crucible rotation from 0 to 10 rpm is considered. It is shown that as the angular velocity of crucible rotation in the axial region increases, both the velocity of the downward flow arising in the regines of thermogravitational convection gradually and the convective heat flux to the crystal-melt interface decrease. As a result, in the range of angular velocities from 2 to 10 rpm, the shape of the crystal-melt interface gradually approaches to the one typical for the thermal conductivity regime. It is shown that at the initial stage of the process at an angular velocity of 10 rpm in the axial region of the cooled crucible bottom, the nucleation of a single crystal is possible.

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Rai, R. N. "Phase diagram, optical, nonlinear optical, and physicochemical studies of the organic monotectic system: Pentachloropyridine–succinonitrile." Journal of Materials Research 19, no. 5 (2004): 1348–55. http://dx.doi.org/10.1557/jmr.2004.0181.

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The two immiscible liquid phases in equilibrium with a single liquid phase have been observed during the phase diagram study of an organic analog of a metal–nonmetal system involving pentachloropyridine (PCP)–succinonitrile (SCN). The phase equilibrium shows the formation of a monotectic and a eutectic, with large miscibility gap in the system, containing 0.0456 and 0.9658 mole fractions of SCN, respectively, and the consolute temperature being 99.0 °C above the monotectic horizontal line. The heat of mixing, entropy of fusion, roughness parameter, interfacial energy, and excess thermodynamic functions were calculated based on enthalpy of fusion data determined via the differential scanning calorimetry method. The effects of solid–liquid interfacial energy on morphology of monotectic structure as well as the variation of interfacial energies with temperature have been discussed. The microstructures of monotectic and eutectic show peculiar characteristic features. The material properties of PCP and PCP doped with SCN crystals, grown by the Bridgman–Stockbarger method, have been studied via studying second harmonic generation efficiency, transparency range, and mechanical hardness.

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Скипетров, Е. П., Н. С. Константинов, Л. А. Скипетрова, А. В. Кнотько та В. Е. Слынько. "Кинетика изменения концентраций магнитных ионов примеси в сплавах Pb-=SUB=-1-x-y-=/SUB=-Sn-=SUB=-x-=/SUB=-V-=SUB=-y-=/SUB=-Te при легировании". Физика и техника полупроводников 52, № 7 (2018): 686. http://dx.doi.org/10.21883/ftp.2018.07.46035.8760.

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AbstractThe field and temperature dependences of the magnetization (magnetic fields B ≤ 7.5 T, temperatures T = 2.0–75 K) of samples from a Pb_1– x – y Sn_ x V_ y Te ( x = 0.08, y = 0.01) single-crystal ingot synthesized by the Bridgman–Stockbarger method. It is established that the sample magnetization contains two main contributions, notably, the paramagnetism of vanadium ions and diamagnetism of the crystal lattice. The field and temperature dependences of the magnetization are approximated by the sum of modified Brillouin functions corresponding to the paramagnetic contributions of vanadium in two different charge states and the diamagnetic contribution linear in terms of field. The concentrations of vanadium ions in two different magnetic states and the character of their variation along the ingot are determined within the scope of the alloy’s electronic-structure rearrangement because of doping. The results are compared with the data of X-ray fluorescence microanalysis and the results of studying the galvanomagnetic properties of the samples.

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Ushakov, Sergey N., Maria A. Uslamina, Aleksandr A. Pynenkov, et al. "Growth and physical properties of CaSrBaF6 single crystals." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 23, no. 1 (2021): 101–7. http://dx.doi.org/10.17308/kcmf.2021.23/3310.

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Using the Bridgman-Stockbarger method, crystals of triple fluoride CaF2-SrF2-BaF2 were grown in a composition range similar to that of CaSrBaF6. The crystals were 10-12 mm in diameter and 50–60 mm in length. The CaSrBaF6 crystal is a new optical material which is transparent in the mid-IR, visible and UV ranges. The uneven distribution of the components along the length of the crystal did not exceed 10 %. The edge of the absorption band in the IR range was 14.3 μm, and the optical absorption at the wavelength of 200 nm did not exceed 18 % (less than 0.2 cm–1). The refraction indices were 1.4527, 1.4488, and 1.4458 for the wavelengths of 633, 969, and 1539 nm respectively. The crystal melts in the temperature range of 1150–1210 °С. The CaSrBaF6 composition is an appropriate matrix for doping with rare-earth ions in order to obtain functional single-crystal and ceramic materials of the visible and IR ranges.

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Magesh, M., A. Arunkumar, P. Vijayakumar, G. Anandha Babu, and P. Ramasamy. "Investigation of optical property in LiInSe2 single crystal grown by Bridgman Stockbarger method using stepper translations for mid IR laser application." Optics & Laser Technology 56 (March 2014): 177–81. http://dx.doi.org/10.1016/j.optlastec.2013.08.003.

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Ramachandran, K., Arumugam Raja, V. Mohankumar, Muthu Senthil Pandian, and P. Ramasamy. "Growth and characterization of 4-methyl-3-nitrobenzoic acid (4M3N) single crystal by using vertical transparent Bridgman-Stockbarger method for NLO applications." Physica B: Condensed Matter 562 (June 2019): 82–93. http://dx.doi.org/10.1016/j.physb.2019.03.014.

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Distanov, V. E., and A. G. Kirdyashkin. "The influence of melt stirring intensity on the axial impurity distribution in proustite single crystals grown by the Stockbarger method using ACRT." Crystal Research and Technology 44, no. 1 (2009): 61–68. http://dx.doi.org/10.1002/crat.200811183.

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Distanov, V. É., and A. G. Kirdyashkin. "Modeling of heat transfer in a melt in growing single crystals by the stockbarger method using the accelerated crucible rotation technique (ACRT)." Journal of Applied Mechanics and Technical Physics 39, no. 1 (1998): 85–90. http://dx.doi.org/10.1007/bf02468002.

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