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Journal articles on the topic 'Switching kinetics'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Jung, D. J., Kinam Kim, and J. F. Scott. "Switching kinetics in nanoferroelectrics." Journal of Physics: Condensed Matter 17, no. 30 (2005): 4843–52. http://dx.doi.org/10.1088/0953-8984/17/30/010.

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2

Cornelissen, Tim D., Michal Biler, Indre Urbanaviciute, Patrick Norman, Mathieu Linares, and Martijn Kemerink. "Kinetic Monte Carlo simulations of organic ferroelectrics." Physical Chemistry Chemical Physics 21, no. 3 (2019): 1375–83. http://dx.doi.org/10.1039/c8cp06716c.

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3

Lou, X. J. "Statistical switching kinetics of ferroelectrics." Journal of Physics: Condensed Matter 21, no. 1 (2008): 012207. http://dx.doi.org/10.1088/0953-8984/21/1/012207.

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4

Kukushkin, S. A. "Switching Kinetics of Ferroelastic Ferroelectrics." Physics of the Solid State 44, no. 12 (2002): 2298. http://dx.doi.org/10.1134/1.1529928.

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5

Kukushkin, S. A., S. A. Kukushkin, and A. V. Osipov. "Polarization switching kinetics in ferroelectrics." Physics of the Solid State 43, no. 1 (2001): 90–97. http://dx.doi.org/10.1134/1.1340193.

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6

Fleck, Karsten, Ulrich Böttger, Rainer Waser, and Stephan Menzel. "SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices." MRS Proceedings 1790 (2015): 7–12. http://dx.doi.org/10.1557/opl.2015.459.

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ABSTRACTIn this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.

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7

Kliem, Herbert, and Markus Kuehn. "Modeling the switching kinetics in ferroelectrics." Journal of Applied Physics 110, no. 11 (2011): 114106. http://dx.doi.org/10.1063/1.3660680.

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8

Othon, C. M., Jihee Kim, Stephen Ducharme, and V. M. Fridkin. "Switching kinetics of ferroelectric polymer nanomesas." Journal of Applied Physics 104, no. 5 (2008): 054109. http://dx.doi.org/10.1063/1.2975200.

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9

Nicolis, G., and C. Nicolis. "Dynamics of switching in nonlinear kinetics." Journal of Physics: Condensed Matter 19, no. 6 (2007): 065131. http://dx.doi.org/10.1088/0953-8984/19/6/065131.

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10

Li, Wei, Peng Bao, Xiaomei Lu, Jinsong Zhu, and Yening Wang. "Switching kinetics of neodymium-modified Bi4Ti3O12thin films." Journal of Physics D: Applied Physics 37, no. 20 (2004): L29—L33. http://dx.doi.org/10.1088/0022-3727/37/20/l01.

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11

Menzel, Stephan, Stefan Tappertzhofen, Rainer Waser, and Ilia Valov. "Switching kinetics of electrochemical metallization memory cells." Physical Chemistry Chemical Physics 15, no. 18 (2013): 6945. http://dx.doi.org/10.1039/c3cp50738f.

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12

Scott, J. F. "Fractal Dimensions in Switching Kinetics of Ferroelectrics." Ferroelectrics 349, no. 1 (2007): 157–62. http://dx.doi.org/10.1080/00150190701260934.

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13

Pantel, Daniel, Ying-Hao Chu, Lane W. Martin, Ramamoorthy Ramesh, Dietrich Hesse, and Marin Alexe. "Switching kinetics in epitaxial BiFeO3 thin films." Journal of Applied Physics 107, no. 8 (2010): 084111. http://dx.doi.org/10.1063/1.3392884.

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14

Dimmler, K., M. Parris, D. Butler, et al. "Switching kinetics in KNO3ferroelectric thin‐film memories." Journal of Applied Physics 61, no. 12 (1987): 5467–70. http://dx.doi.org/10.1063/1.338237.

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15

Tikhomirova, N. A., L. A. Shuvalov, and L. I. Dontsova. "Kinetics of switching of collinear ferroelectric crystals." Ferroelectrics 70, no. 1 (1986): 1–5. http://dx.doi.org/10.1080/00150198608221415.

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16

Shur, V. Ya, S. D. Makarov, N. Yu Ponomarev, et al. "Switching kinetics in epitaxial PZT thin films." Microelectronic Engineering 29, no. 1-4 (1995): 153–57. http://dx.doi.org/10.1016/0167-9317(95)00135-2.

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17

Ahn, Yoonho, and Jong Yeog Son. "Domain switching kinetics in ferroelectric PbTiO3 nanostructures." Scripta Materialia 205 (December 2021): 114208. http://dx.doi.org/10.1016/j.scriptamat.2021.114208.

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18

Jiang, Anquan, Matthew Dawber, James F. Scott, Can Wang, Piero Migliorato, and Marty Gregg. "Studies of Switching Kinetics in Ferroelectric Thin Films." Japanese Journal of Applied Physics 42, Part 1, No. 11 (2003): 6973–82. http://dx.doi.org/10.1143/jjap.42.6973.

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19

Rogowski, R. Z., K. Matyjasek, and R. Jakubas. "Kinetics of ferroelectric switching in unipolar (CH3NH3)5Bi2Br11crystal." Journal of Physics D: Applied Physics 38, no. 23 (2005): 4145–52. http://dx.doi.org/10.1088/0022-3727/38/23/001.

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20

Howard, Joseph L., Michael C. Brand, and Duncan L. Browne. "Switching Chemoselectivity: Using Mechanochemistry to Alter Reaction Kinetics." Angewandte Chemie 130, no. 49 (2018): 16336–40. http://dx.doi.org/10.1002/ange.201810141.

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21

Howard, Joseph L., Michael C. Brand, and Duncan L. Browne. "Switching Chemoselectivity: Using Mechanochemistry to Alter Reaction Kinetics." Angewandte Chemie International Edition 57, no. 49 (2018): 16104–8. http://dx.doi.org/10.1002/anie.201810141.

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22

Herklotz, A., E.-J. Guo, M. D. Biegalski, H.-M. Christen, L. Schultz, and K. Dörr. "Strain-controlled switching kinetics of epitaxial PbZr0.52Ti0.48O3 films." New Journal of Physics 15, no. 7 (2013): 073021. http://dx.doi.org/10.1088/1367-2630/15/7/073021.

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23

Menzel, Stephan, Ulrich Böttger, Martin Wimmer, and Martin Salinga. "Physics of the Switching Kinetics in Resistive Memories." Advanced Functional Materials 25, no. 40 (2015): 6306–25. http://dx.doi.org/10.1002/adfm.201500825.

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24

Jia, Hong Jing, Wei Wei Geng, and Shou Zhi Pu. "Photochromic Kinetics of a Novel Unsymmetrical Diarylethene." Advanced Materials Research 830 (October 2013): 250–53. http://dx.doi.org/10.4028/www.scientific.net/amr.830.250.

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A new unsymmetrical photochromic diarylethene1o, which is named 1-[2-methyl-5-(4-methoxyphenyl)-3-thienyl)-2-{2-methyl-5-[4-methoxyl-3-(2-(1,3-dioxolane)) phenyl]-3-thienyl} perfluorocyclopentene, was synthesized. Its optical properties, including photochromic reactivity, kinetics and fluorescence properties were investigated in detail. The result indicated that the diarylethene underwent reversible photochromism, changing between colorless and blue in hexane solution upon appropriate irradiation with UV light or visible light, respectively. What is more, the kinetic experiments illustrated that the cyclization/cycloreversion process of this compound was determined to be the zeroth/first reaction. In addition, the results demonstrated that the unsymmetrical diarylethene compound1ohad remarkable fluorescence switching properties.

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25

Levstik, A., M. Kosec, V. Bobnar, C. Filipič, and J. Holc. "Switching Kinetics in Thick Film and Bulk PLZT Ceramics." Key Engineering Materials 132-136 (April 1997): 1104–7. http://dx.doi.org/10.4028/www.scientific.net/kem.132-136.1104.

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26

Gaynutdinov, R., M. Minnekaev, S. Mitko, et al. "Polarization switching kinetics in ultrathin ferroelectric barium titanate film." Physica B: Condensed Matter 424 (September 2013): 8–12. http://dx.doi.org/10.1016/j.physb.2013.04.056.

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27

Kȩdzierski, D., E. V. Kirichenko, and V. A. Stephanovich. "On the theory of domain switching kinetics in ferroelectrics." Physics Letters A 375, no. 3 (2011): 685–88. http://dx.doi.org/10.1016/j.physleta.2010.11.059.

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28

Nam, Song-Min, Young-Bae Kil, Satoshi Wada, and Takaaki Tsurumi. "Domain Switching Kinetics of Lead Zirconate Titinate Thin Films." Japanese Journal of Applied Physics 42, Part 2, No. 12B (2003): L1519—L1522. http://dx.doi.org/10.1143/jjap.42.l1519.

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29

IEVLEV, A., K. VERKHOVSKAYA, and V. FRIDKIN. "Landau-Khalatnikov Switching Kinetics in the Ferroelectric Copolymer Nanostructures." Ferroelectrics Letters Section 33, no. 5-6 (2006): 147–52. http://dx.doi.org/10.1080/07315170601015031.

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30

Gao, R. L., H. W. Yang, Y. S. Chen, J. R. Sun, Y. G. Zhao, and B. G. Shen. "Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films." Journal of Applied Physics 114, no. 17 (2013): 174101. http://dx.doi.org/10.1063/1.4828880.

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31

Scott, J. F., C. A. Az de Araujo, and L. D. Mcmillan. "Anomalous switching kinetics in ferroelectric thin (≤ 200 nm) films." Ferroelectrics 140, no. 1 (1993): 219–23. http://dx.doi.org/10.1080/00150199308008287.

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32

Zhang, Kang-Da, Xin Zhao, Gui-Tao Wang, et al. "Foldamer-Tuned Switching Kinetics and Metastability of [2]Rotaxanes." Angewandte Chemie 123, no. 42 (2011): 10040–44. http://dx.doi.org/10.1002/ange.201104099.

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33

Ayoub, Mousa, Hannes Futterlieb, Jörg Imbrock, and Cornelia Denz. "3D Imaging of Ferroelectric Kinetics during Electrically Driven Switching." Advanced Materials 29, no. 5 (2016): 1603325. http://dx.doi.org/10.1002/adma.201603325.

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34

Zhang, Kang-Da, Xin Zhao, Gui-Tao Wang, et al. "Foldamer-Tuned Switching Kinetics and Metastability of [2]Rotaxanes." Angewandte Chemie International Edition 50, no. 42 (2011): 9866–70. http://dx.doi.org/10.1002/anie.201104099.

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35

Morgan, K. A., J. Fan, R. Huang, et al. "Switching kinetics of SiC resistive memory for harsh environments." AIP Advances 5, no. 7 (2015): 077121. http://dx.doi.org/10.1063/1.4926674.

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36

Petukhov, B. V. "Kinetics of state switching in a disordered linear system." Crystallography Reports 45, no. 4 (2000): 640–46. http://dx.doi.org/10.1134/1.1306576.

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37

Quercioli, Valentina, Chiara Bosisio, Stefano C. Daglio, et al. "Photoinduced Millisecond Switching Kinetics in the GFPMut2 E222Q Mutant." Journal of Physical Chemistry B 114, no. 13 (2010): 4664–77. http://dx.doi.org/10.1021/jp910075b.

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38

Meilanov, R. P., and S. A. Sadykov. "Fractal model for polarization switching kinetics in ferroelectric crystals." Technical Physics 44, no. 5 (1999): 595–96. http://dx.doi.org/10.1134/1.1259390.

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39

Zhou, Shuang, Lu You, Apoorva Chaturvedi, et al. "Anomalous polarization switching and permanent retention in a ferroelectric ionic conductor." Materials Horizons 7, no. 1 (2020): 263–74. http://dx.doi.org/10.1039/c9mh01215j.

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40

Pu, Shou Zhi, Ren Jie Wang, Hong Ying Xia, and Gang Liu. "Synthesis, Kinetics and Electrochemical Properties of a New Photochromic Diarylethene." Key Engineering Materials 474-476 (April 2011): 1543–46. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.1543.

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A new unsymmetrical photochromic diarylethene [1-(2-methyl-5-(3-methoxyphenyl)-3-thienyl), 2-(2-methyl-3-benzothienyl)] perfluorocyclopentene (1a), was synthesized, and its photochromic properties such as photochromism, kinetics and electrochemical properties were investigated in detail. The results showed that the compound exhibited excellent photochromism both in solution and in PMMA film with alternating irradiation by UV/Vis light. The kinetic and electrochemical experiments indicated that the cyclization/cycloreversion process of the compound was determined to be the zeroth/first order reaction, and the electrochemcial switching property can be potential use for electrochemistry data storage. At last, using this dithienylethene as recording medium was performed successfully.

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41

Kukushkin, S. A., and M. A. Zakharov. "Thermodynamics and Kinetics of Switching in Ferroelastics-Ferroelectrics. The Bulk Switching and Ostwald Ripening Stages." Ferroelectrics 280, no. 1 (2002): 53–73. http://dx.doi.org/10.1080/00150190214804.

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42

Akhmatkhanov, Andrey, Ekaterina Vaskina, Ekaterina Gachegova, and Vladimir Shur. "Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer." Crystals 8, no. 8 (2018): 315. http://dx.doi.org/10.3390/cryst8080315.

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Studies of polarization reversal processes in potassium titanyl phosphate (KTiOPO4, KTP) single crystals with surface dielectric layer are important due to their potential applications as the basis of bottom-up technology for creation of periodically poled nonlinear-optical crystals. We present the results of switching currents analysis accompanied by in situ visualization of domain kinetics during polarization reversal in KTP with 3 m-thick photoresist dielectric layer. Qualitative change of the switching current shape has been revealed as compared to the polarization reversal without surface dielectric layer. Two stages of domain structure evolution have been distinguished by in situ visualization of domain kinetics. The formation of submicron domain streamers in front of the moving domain walls has been revealed. The broadening of the domain streamers (1D domain growth) was observed at the second stage. The switching currents were approximated by the modified Kolmogorov-Avrami formula taking into account the change of the growth dimensionality (“geometrical catastrophe”). The sufficient input of the 1D growth to the switching process decreased with increase of the switching field. The obtained results were attributed to the domain wall shape instability induced by retardation of the depolarization field screening in ferroelectric with surface dielectric layer.

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43

Dong, Xiao Rong, Ren Jie Wang, and Shou Zhi Pu. "Synthesis and Photochromism Studies of 1-(2,5-Dimethyl-3-Thienyl)-2-[2-Methyl-5- Pyrenyl-3-Thienyl]Perfluorocyclopentene." Applied Mechanics and Materials 662 (October 2014): 79–82. http://dx.doi.org/10.4028/www.scientific.net/amm.662.79.

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A new unsymmetrical photochromic diarylethene1o, which contains condensed nucleus was synthesized. Its photochromic both in hexane solution and in PMMA film and kinetics experiment were investigated in detail. The result indicated that this diarylethene had reversible photochromism, changing the color from colorless to purple in hexane solution upon appropriate irradiation with 297 nm UV light, respectively. What’s more, The kinetic experiments showed that the cyclization and cycloreversion processes were zeroth and first order reaction, respectively. This new photochromic system also exhibited fluorescence switching in acetonitrile solution.

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44

Oh, Seung Ik, In Hyuk Im, Chanyoung Yoo, et al. "Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory." Micromachines 10, no. 5 (2019): 281. http://dx.doi.org/10.3390/mi10050281.

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The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson–Mehl–Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

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45

Nakagawa, Yuuta, Yoichiro Hashizume, Takashi Nakajima, Alexei Gruverman, and Soichiro Okamura. "Domain switching kinetics in vinylidene fluoride/tetrafluoroethylene copolymer thin films." Japanese Journal of Applied Physics 55, no. 10S (2016): 10TA12. http://dx.doi.org/10.7567/jjap.55.10ta12.

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46

Meng, Jianwei, Jun Jiang, Wenping Geng, Zhihui Chen, Wei Zhang, and Anquan Jiang. "Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories." Japanese Journal of Applied Physics 54, no. 2 (2015): 024102. http://dx.doi.org/10.7567/jjap.54.024102.

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47

Nautiyal, Arvind, Navneet Dabra, K. C. Sekhar, Jasbir S. Hundal, N. P. Pathak, and R. Nath. "Switching Kinetics in Cesium Nitrate: Poly (Vinyl Alcohol) Composite Film." Ferroelectrics Letters Section 38, no. 1-3 (2011): 51–58. http://dx.doi.org/10.1080/07315171.2011.570181.

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48

Tappertzhofen, S., I. Valov, and R. Waser. "Quantum conductance and switching kinetics of AgI-based microcrossbar cells." Nanotechnology 23, no. 14 (2012): 145703. http://dx.doi.org/10.1088/0957-4484/23/14/145703.

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49

Genenko, Yuri A., Jens Wehner, and Heinz von Seggern. "Self-consistent model of polarization switching kinetics in disordered ferroelectrics." Journal of Applied Physics 114, no. 8 (2013): 084101. http://dx.doi.org/10.1063/1.4818951.

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50

Shur, Vladimir Ya, and Evgeniy L. Rumyantsev. "Kinetics of ferroelectric domain structure during switching: Theory and experiment." Ferroelectrics 151, no. 1 (1994): 171–80. http://dx.doi.org/10.1080/00150199408244739.

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