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1
Nominanda, Helinda. "Amorphous silicon thin film transistor as nonvolatile device." Texas A&M University, 2008. http://hdl.handle.net/1969.1/86004.
Full textAbstract:
n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs)
with copper electrodes prepared by a novel plasma etching process have been fabricated
and studied. Their characteristics are similar to those of TFTs with molybdenum
electrodes. The reliability was examined by extended high-temperature annealing and
gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this
plasma etching method.
Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different
experimental stages have been measured. The gamma-ray irradiation damaged bulk
films and interfaces and caused the shift of the transfer characteristics to the positive
voltage direction. The field effect mobility, on/off current ratio, and interface state
density of the TFTs were deteriorated by the irradiation process. Thermal annealing
almost restored the original state's characteristics.
Floating gate n-channel a-Si:H TFT nonvolatile memory device with a thin a-
Si:H layer embedded in the SiNx gate dielectric layer has been prepared and studied. The
hysteresis of the TFT's transfer characteristics has been used to demonstrate its memory function. A steady threshold voltage change between the "0" and "1" states and a large
charge retention time of > 3600 s with the "write" and "erase" gap of 0.5 V have been
detected. Charge storage is related to properties of the embedded a-Si:H layer and its
interfaces in the gate dielectric structure. Discharge efficiencies with various methods,
i.e., thermal annealing, negative gate bias, and light exposure, separately, were
investigated. The charge storage and discharge efficiency decrease with the increase of
the drain voltage under a dynamic operation condition. Optimum operating temperatures
are low temperature for storage and higher temperature for discharge.
a-Si:H metal insulator semiconductor (MIS) capacitor with a thin a-Si:H film
embedded in the silicon nitride gate dielectric stack has been characterized for memory
functions. The hysteresis of the capacitor's current-voltage and capacitance-voltage
curves showed strong charge trapping and detrapping phenomena. The 9 nm embedded
a-Si:H layer had a charge storage capacity six times that of the capacitor without the
embedded layer. The nonvolatile memory device has potential for low temperature
circuit applications.
2
Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.
Full textAbstract:
Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose.
In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced that are intensively characterized and used as a basis for later device simulation. Therefore, among others 4-point-probe measurements are used for a potential mapping of the transistor channel and via transfer line method the contact resistance is measured in a temperature range between 173 and 353 K.
From later comparison with the simulation models, it appears that the geometrical resistance is actually more important for the transistor performance than the resistance of charge-carrier injection at the electrodes. The charge-carrier mobility is detailed evaluated and discussed. Within the observed temperature range a Arrhenius-like thermal activation of the charge- carrier transport is determined with an activation energy of 170 meV. Furthermore, a dependence of the electric field-strength of a Poole-Frenkel type is found with a Poole-Frenkel factor of about 4.9 × 10E−4 (V/m) −0.5 that is especially important for transistors with small channel length. With these two considerations, already a good agreement between device simulation and measurement data is reached. In a detailed discussion of the dependence on the charge-carrier density and from comparison with established the charge-carrier mobility models, an exponential density of states could be estimated for the organic semiconductor.
However, reliability of OTFTs remains one of the most challenging hurdles to be understood and resolved for broad commercial applications. In particular, bias-stress is identified as the key instability under operation for numerous OTFT devices and interfaces. In this work, a novel approach is presented that allows controlling and significantly alleviating the bias-stress effect by using molecular doping at low concentrations. For pentacene as semiconductor and SiO2 as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias-stress is explained in terms of the shift of Fermi level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. For transistors prepared in cooperation with the industrial partner, a second effect is observed that can be explained by a model considering a ferroelectric process in the dielectric and counteracts the bias-stress behavior.
3
Meng, Zhiguo. "Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology and application to flat-panel displays /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20MENG.
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4
Izzard, Martin John. "The poly-crystalline silicon thin-film transistor as a circuit device in display applications." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358657.
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5
Zhu, Lei. "Modeling of a-Si:H TFT I-V Characteristics in the Forward Subthreshold Operation." Thesis, University of Waterloo, 2005. http://hdl.handle.net/10012/868.
Full textAbstract:
The hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used as switching elements in LCD displays and large area matrix addressed senor arrays. In recent years, a-Si:H TFTs have been used as analog active components in OLED displays. However, a-Si:H TFTs exhibit a bias induced metastability. This problem causes both threshold voltage and subthreshold slope to shift with time when a gate bias is applied. These instabilities jeopardize the long-term performance of a-Si:H TFT circuits. Nevertheless a-Si:H TFTs show an exponential transfer characteristic in the subthreshold region. Moreover, the typical power consumptions for TFTs in the subthreshold region are in the order of nano-watts, thus making them suitable for low power design. For these reasons, a-Si:H TFT I-V characteristics in the forward subthreshold operation are investigated. First, we have derived the static and dynamic models of a-Si:H TFT in the forward subthreshold region. Second, we have verified our theoretical models with experimental results. Third, we have proven that a-Si:H TFT experiences no subthreshold slope degradation or threshold voltage shift in the forward subthreshold operation. Finally, we have studied a-Si:H TFT current mirror circuit applications. Measurements regarding the fidelity of current matching in the forward subthreshold region have been performed, and results are shown.
6
Noring, Martin. "To automatically estimate the surface area coverage of carbon nanotubes on thin film transistors with image analysis : Bachelor’s degree project report." Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-157168.
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This report discuss the developement of a MATLAB-based tool for the analysis ofsurface area coverage of carbon nanotube networks from atomic force microscopyimages. The tool was compared with a manual method and the conclusion was that ithas, at least, the same accuracy as the manual mehtod, and it needs much less time forthe analysis. The tool couldn’t analyze images of carbon nanotube networks if theimages were to noisy or the networks to dense. The tool can help in the research ofthin-film transistors with carbon nanotube networks as the semiconducting channelmaterial.
7
Grant, David James. "Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD." Thesis, University of Waterloo, 2004. http://hdl.handle.net/10012/805.
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Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Deposition (PECVD). Pulsed PECVD also reduces powder particle formation in the plasma and provides added degrees of freedom for process optimization. Unlike high frequency PECVD, pulsed PECVD can be scaled to deposit films over large areas with no reduction in performance.
For this thesis, silicon thin films were deposited by the pulsed PECVD technique at a temperature of 150 °C and TFTs were made using this material. Radio Frequency (RF) power and silane (SiH<sub>4</sub>) flow rate were varied in order to study the effect of different levels of crystallinity on the film.
Raman spectroscopy, Atomic Force Microscope (AFM), X-Ray Diffraction (XRD), electrical conductivity, Hall mobility, optical band gap, and stability under light-soaking were measured using films of two different thicknesses, 50 nm and 300 nm. From the Raman data we see that the 50 nm films deposited with high hydrogen dilution are mostly amorphous, indicating the presence of a thick incubation layer. The 300nm samples deposited with hydrogen dilution, on the other hand, showed very high crystallinity and conductivity, except for 300-2 which was surprisingly, mostly amorphous. AFM and XRD measurements were also performed to confirm the Raman data and get an estimate for the crystallite grain size in the 300 nm samples. The conductivity was measured for all films, and the Hall mobility and carrier concentration was measured for one of the 300 nm films. The thin samples which are mostly amorphous show low conductivity whereas the thick high crystallinity films show high conductivity, and n-type behaviour possibly due to oxygen doping. The optical gap was also measured using Ultra Violet (UV) light and results indicate the possible presence of small crystallites in the 50 nm films. The conductivity's stability under light-soaking was measured to observe the material's susceptibility to degradation, and the 300 nm with high crystallinity were much more stable than the a-Si:H films. All the results of these measurements varied depending on the film and these results are discussed.
Bottom-gate TFTs were fabricated using a pulsed PECVD channel layer and an amorphous silicon nitride (a-SiN:H) gate dielectric. The extracted parameters of one of the best TFTs are <i>μ<sub>sat</sub></i> ≤ 0. 38 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, <i>V<sub>t,sat</sub></i> ≥ 7. 3 V, <i>I<sub>on/off</sub></i> > 10<sup>6</sup>, and <i>S</i> < 1 V/decade. These parameters were extracted semi-automatically from the basic Field-Effect Transistor (FET) model using a computer program. Extraction using a more complicated model yielded similar results for mobility and threshold voltage but also gave a large power parameter <i>α</i> of 2. 31 and conduction band tail slope of 30 meV. The TFT performance and material properties are presented and discussed.
On this first attempt at fabricating TFTs using a nc-Si:H channel layer deposited by pulsed PECVD, results were obtained which are consistent with results for low temperature a-Si:H TFTs and previous pulsed PECVD TFTs. The channel layer was mostly amorphous and non-crystalline, possibly due to the amorphous substrate or insufficient hydrogen dilution in the plasma. The 300 nm films showed, however, that high crystallinity material deposited directly on glass can easily be obtained, and this material showed less degradation under light-soaking than the purely amorphous counterpart. Pulsed PECVD is a promising technique for the growth of nc-Si:H and with further materials development and process optimization for TFTs, it may prove to be useful for the growth of high-quality nc-Si:H TFT channel layers.
8
Lindner, Thomas. "Organische Feldeffekt-Transistoren: Modellierung und Simulation." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2005. http://nbn-resolving.de/urn:nbn:de:swb:14-1116323078792-49660.
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Die vorliegende Arbeit befasst sich mit der Simulation und Modellierung organischer Feldeffekt-Transistoren (OFETs). Mittels numerischer Simulationen wurden detaillierte Untersuchungen zu mehreren Problemstellungen durchgeführt. So wurde der Einfluss einer exponentiellen Verteilung von Trapzuständen, entsprechend dem sogenannten a-Si- oder TFT-Modell, auf die Transistorkennlinien untersucht. Dieses Modell dient der Beschreibung von Dünnschicht-Transistoren mit amorphen Silizium als aktiver Schicht und wird teils auch für organische Transistoren als zutreffend angesehen. Dieser Sachverhalt wird jedoch erstmals in dieser Arbeit detailliert untersucht und simulierte Kennlinien mit gemessenen Kennlinien von OFETs verglichen. Insbesondere aufgrund der Dominanz von Hysterese-Effekten in experimentellen Kennlinien ist jedoch eine endgültige Aussage über die Gültigkeit des a-Si-Modells schwierig. Neben dem a-Si-Modell werden auch noch andere Modelle diskutiert, z.B. Hopping-Transport zwischen exponentiell verteilten lokalisierten Zuständen (Vissenberg, Matters). Diese Modelle liefern, abhängig von den zu wählenden Modellparametern, zum Teil ähnliche Abhängigkeiten. Möglicherweise müssen die zu wählenden Modellparameter selbst separat gemessen werden, um eindeutige Schlussfolgerungen über den zugrundeliegenden Transportmechanismus ziehen zu können. Unerwünschte Hysterese-Effekte treten dabei sowohl in Transistorkennlinien als auch in Kapazitäts-Spannungs- (CV-) Kennlinien organischer MOS-Kondensatoren auf. Diese Effekte sind bisher weder hinreichend experimentell charakterisiert noch von ihren Ursachen her verstanden. In der Literatur findet man Annahmen, dass die Umladung von Trapzuständen oder bewegliche Ionen ursächlich sein könnten. In einer umfangreichen Studie wurde daher der Einfluß von Trapzuständen auf quasistatische CV-Kennlinien organischer MOS-Kondensatoren untersucht und daraus resultierende Hysterese-Formen vorgestellt. Aus den Ergebnissen läßt sich schlussfolgern, dass allein die Umladung von Trapzuständen nicht Ursache für die experimentell beobachteten Hysteresen in organischen Bauelementen sein kann. Eine mögliche Erklärung für diese Hysterese-Effekte wird vorgeschlagen und diskutiert. In einem weiteren Teil der Arbeit wird im Detail die Arbeitsweise des source-gated Dünnschicht-Transistors (SGT) aufgezeigt, ein Transistortyp, welcher erst kürzlich in der Literatur eingeführt wurde. Dies geschieht am Beispiel eines Transistors auf der Basis von a-Si als aktiver Schicht, die Ergebnisse lassen sich jedoch analog auch auf organische Transistoren übertragen. Es wird geschlussfolgert, dass der SGT ein gewöhnlich betriebener Dünnschicht-Transistor ist, limitiert durch das Sourcegebiet mit großem Widerstand. Die detaillierte Untersuchung des SGT führt somit auf eine Beschreibung, die im Gegensatz zur ursprünglich verbal diskutierten Arbeitsweise steht. Ambipolare organische Feldeffekt-Transistoren sind ein weiterer Gegenstand der Arbeit. Bei der Beschreibung ambipolarer Transistoren vernachlässigen bisherige Modelle sowohl die Kontakteigenschaften als auch die Rekombination von Ladungsträgern. Beides wird hingegen in den vorgestellten numerischen Simulationen erstmalig berücksichtigt. Anhand eines Einschicht-Modellsystems wurde die grundlegende Arbeitsweise von ambipolaren (double-injection) OFETs untersucht. Es wird der entscheidende Einfluß der Kontakte sowie die Abhängigkeit gegenüber Variationen von Materialparametern geklärt. Sowohl der Kontakteinfluß als auch Rekombination sind entscheidend für die Arbeitsweise. Zusätzlich werden Möglichkeiten und Einschränkungen für die Datenanalyse mittels einfacher analytischer Ausdrücke aufgezeigt. Es zeigte sich, dass diese nicht immer zur Auswertung von Kennlinien herangezogen werden dürfen. Weiterhin werden erste Simulationsergebnisse eines ambipolaren organischen Heterostruktur-TFTs mit experimentellen Daten verglichen.
9
Lindner, Thomas. "Organische Feldeffekt-Transistoren: Modellierung und Simulation." Doctoral thesis, Technische Universität Dresden, 2004. https://tud.qucosa.de/id/qucosa%3A24492.
Full textAbstract:
Die vorliegende Arbeit befasst sich mit der Simulation und Modellierung organischer Feldeffekt-Transistoren (OFETs). Mittels numerischer Simulationen wurden detaillierte Untersuchungen zu mehreren Problemstellungen durchgeführt. So wurde der Einfluss einer exponentiellen Verteilung von Trapzuständen, entsprechend dem sogenannten a-Si- oder TFT-Modell, auf die Transistorkennlinien untersucht. Dieses Modell dient der Beschreibung von Dünnschicht-Transistoren mit amorphen Silizium als aktiver Schicht und wird teils auch für organische Transistoren als zutreffend angesehen. Dieser Sachverhalt wird jedoch erstmals in dieser Arbeit detailliert untersucht und simulierte Kennlinien mit gemessenen Kennlinien von OFETs verglichen. Insbesondere aufgrund der Dominanz von Hysterese-Effekten in experimentellen Kennlinien ist jedoch eine endgültige Aussage über die Gültigkeit des a-Si-Modells schwierig. Neben dem a-Si-Modell werden auch noch andere Modelle diskutiert, z.B. Hopping-Transport zwischen exponentiell verteilten lokalisierten Zuständen (Vissenberg, Matters). Diese Modelle liefern, abhängig von den zu wählenden Modellparametern, zum Teil ähnliche Abhängigkeiten. Möglicherweise müssen die zu wählenden Modellparameter selbst separat gemessen werden, um eindeutige Schlussfolgerungen über den zugrundeliegenden Transportmechanismus ziehen zu können. Unerwünschte Hysterese-Effekte treten dabei sowohl in Transistorkennlinien als auch in Kapazitäts-Spannungs- (CV-) Kennlinien organischer MOS-Kondensatoren auf. Diese Effekte sind bisher weder hinreichend experimentell charakterisiert noch von ihren Ursachen her verstanden. In der Literatur findet man Annahmen, dass die Umladung von Trapzuständen oder bewegliche Ionen ursächlich sein könnten. In einer umfangreichen Studie wurde daher der Einfluß von Trapzuständen auf quasistatische CV-Kennlinien organischer MOS-Kondensatoren untersucht und daraus resultierende Hysterese-Formen vorgestellt. Aus den Ergebnissen läßt sich schlussfolgern, dass allein die Umladung von Trapzuständen nicht Ursache für die experimentell beobachteten Hysteresen in organischen Bauelementen sein kann. Eine mögliche Erklärung für diese Hysterese-Effekte wird vorgeschlagen und diskutiert. In einem weiteren Teil der Arbeit wird im Detail die Arbeitsweise des source-gated Dünnschicht-Transistors (SGT) aufgezeigt, ein Transistortyp, welcher erst kürzlich in der Literatur eingeführt wurde. Dies geschieht am Beispiel eines Transistors auf der Basis von a-Si als aktiver Schicht, die Ergebnisse lassen sich jedoch analog auch auf organische Transistoren übertragen. Es wird geschlussfolgert, dass der SGT ein gewöhnlich betriebener Dünnschicht-Transistor ist, limitiert durch das Sourcegebiet mit großem Widerstand. Die detaillierte Untersuchung des SGT führt somit auf eine Beschreibung, die im Gegensatz zur ursprünglich verbal diskutierten Arbeitsweise steht. Ambipolare organische Feldeffekt-Transistoren sind ein weiterer Gegenstand der Arbeit. Bei der Beschreibung ambipolarer Transistoren vernachlässigen bisherige Modelle sowohl die Kontakteigenschaften als auch die Rekombination von Ladungsträgern. Beides wird hingegen in den vorgestellten numerischen Simulationen erstmalig berücksichtigt. Anhand eines Einschicht-Modellsystems wurde die grundlegende Arbeitsweise von ambipolaren (double-injection) OFETs untersucht. Es wird der entscheidende Einfluß der Kontakte sowie die Abhängigkeit gegenüber Variationen von Materialparametern geklärt. Sowohl der Kontakteinfluß als auch Rekombination sind entscheidend für die Arbeitsweise. Zusätzlich werden Möglichkeiten und Einschränkungen für die Datenanalyse mittels einfacher analytischer Ausdrücke aufgezeigt. Es zeigte sich, dass diese nicht immer zur Auswertung von Kennlinien herangezogen werden dürfen. Weiterhin werden erste Simulationsergebnisse eines ambipolaren organischen Heterostruktur-TFTs mit experimentellen Daten verglichen.
10
Chung, Lung-Sheng, and 鍾隆陞. "The Ten Thin Film Transistor-Liquid Crystal Display(TFT-LCD) Manufacturers of Operating Analysis and Performance Assessment." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/99099373048102261857.
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碩士<br>開南大學<br>專案管理研究所<br>98<br>With the trend of rapid development in the digital information of the world，the product demand of information industry on light、thin and less-electricity leads the accelerated development of global thin film transistor-Liquid Crystal Display(TFT-LCD) manufacturers. Moreover, the main production line concentrates in South Korea and Taiwan and the sales volume of the global total output value is 83% approximately in the existing big factory of the thin film transistor-Liquid Crystal Display (TFT-LCD). TFT-LCD display has already been a main product of the information industry at present, in view of growing rapidly of demand in the world, the competition of TFT-LCD manufacturers have been a fierce phenomenon. The most important subject for administrator of every TFT-LCD manufacturer is how to make the best disposition of resources and create more and more profits. Korea and Japan TFT-LCD manufacturers are regarded as the research object in this research, via the relevant TFT-LCD manufacturer environmental trend analysis in the IEK and the public observation station and the public statement, and the annual financial statement in the 10 TFT-LCD manufacturers in the world; through the improvement of Data Envelopment Analysis (DEA) in order to measure the dynamic operation performance in Taiwan, Korea and Japan TFT-LCD manufacturers in 2002 to 2007. The survey results showed that the Innolux has the highest management accomplishment while the Toshiba comes up the last.
11
"Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors." Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.37039.
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abstract: A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors.
Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.<br>Dissertation/Thesis<br>Doctoral Dissertation Chemical Engineering 2016
12
Hsu, Sen-Yen, and 許森彥. "Mental Health and Sleep Quality of Shift Workers in the Thin Film Transistor Liquid Crystal Display (TFT-LCD) Industry." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/16927726378461536219.
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碩士<br>國立成功大學<br>環境醫學研究所<br>93<br>Shift workers have more mental health problems and sleep disturbances. Thin film transistor liquid crystal display (TFT-LCD) industry has become the leading industry in Taiwan. We conducted two cross-sectional studies on mental health and sleep disturbance in the TFT-LCD industry in Taiwan. The first study was designed to sketch the mental health condition of the employees of the TFT-LCD industry, and the second was on sleep quality of the workers. Data were collected by self-administered questionnaires. In the first study, after 9458 questionnaires were delivered, 5520 (58.2%) were completed and analyzed. Shift workers were mostly female, single, younger, and with lower educational level and shorter duration of employment. After adjusting for other factors, female gender (odds ratio [OR] 2.00, 95% confidence interval [CI] 1.67-2.39), married (OR 1.28, 95%CI 1.09-1.50), ever married but single now (OR 1.93, 95%CI 1.03-3.61), and the duration of current employment more than 1 year (OR 1.51, 95%CI 1.33-1.71) had significant associations with poor mental health condition. The risk of mental problems decreased with age (OR 0.98, 95%CI 0.96-1.00), and the employees of the entry level had less risk of mental problems (odds ratio 0.59, 95%CI 0.43-0.82).
In the second study, the 3640 (85.6%) of 4250 delivered questionnaires were finished and analyzed. After adjusting for other factors, the clean room workers (OR 1.60, 95%CI 1.09-2.33) and female gender (OR 2.37，95%CI 1.75-3.20) had significant associations with poor sleep quality. In stratified analyses, female clean room workers had the highest proportion of poor sleepers while male non-clean room workers had lowest proportion. Shift workers had different directions of association with individual items of sleep quality complaints.
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Chiu, Shu-Ping, and 邱姝萍. "A study on the treatment technology ofglass substrate and liquid crystal in Thin Film Transistor - Liquid Crystal Display (TFT-LCD)." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/rj8bvd.
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碩士<br>國立臺北科技大學<br>環境工程與管理研究所<br>102<br>The demands for TFT-LCDs are increasing globally year by year, and the TFT-LCD is mainly applied on electronic and informative products, however, the major waste TFT-LCDs processing is landfill which has features of high cost and high risks of secondary pollution, thus, this processing method should not be the permanent way for waste TFT-LCD. Therefore, the proper processing and recycling of glass substrates and liquid crystals of waste TFT-LCDs have major significance.
Through literatures analysis, it is learnt that extraction separation of waste liquid crystals could be performed by supercritical carbon dioxide, organic solvent, thermal precipitation and ultrasonic with acetone solvent methods; and the extraction separation of waste glass substrates and polarizing films could be implemented by thermal shock, pyrolysis, organic solvent and winnowing, and the separated waste glass from TFT-LCDs could be recycled and used as materials for concrete bricks, biological bricks, foamed glass and so on.
The results from this study showed that the optimum waste liquid crystals processing technique is to use acetone solvent to extract liquid crystals from waste TFT-LCDs, and carry out the purification and tempering of the extracted liquid crystals to make them as custom compound formula for application of TFT-LCD factories. As for the optimum waste glass substrates processing method, they should be grinded by grinders initially and separate glass substrates with polarizing films by winnowing, thereafter, polarizing films could be used as reducing agents in smelting furnaces; and waste liquid crystal panel glass could be used for road and construction materials.
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Yi, Chan Kung, and 詹功一. "An FPGA Design of Image Compression technique with the application to the Thin-Film Transistor Liquid Crystal Display(TFT-LCD)." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/35599670791626548837.
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碩士<br>長庚大學<br>電子工程學研究所<br>96<br>The mobile market changes with each new day, the function unceasingly weeds through the old to bring forth the new, but the price actually unceasingly glides down , based on the selling price consideration, cost reduction is the mobile market important topic. Driver IC is in the mobile important material, reduces actuates the IC area, equates reduces actuates IC the price. The compression image
memory size is the reduction actuates the IC area the good method, therefore seeks useful and conforms to the demand compression method for this research goal. In order to choose the suitable image compression method, carries on the simulation by the Matlab application software, had appraised RGB direct down bit method and RGB transfers to YCbCr compression method, after the comparison effect,
decided (Mean) compresses take YCbCr 2 x 2 PAU develops the algorithm as this research center argument, carries out this image compression method by the FPGA hardware circuit. Finally, lightens the 2.83 " mobile panel, It proves the YCbCr 2 x 2 (Mean) compression algorithm research and its the feasibility, to actuates Driver IC to reduce area and cost to make the contribution on mobile product.
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"Flexible Electronics and Display Technology for Medical, Biological, and Life Science Applications." Doctoral diss., 2014. http://hdl.handle.net/2286/R.I.25926.
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abstract: This work explores how flexible electronics and display technology can be applied to develop new biomedical devices for medical, biological, and life science applications. It demonstrates how new biomedical devices can be manufactured by only modifying or personalizing the upper layers of a conventional thin film transistor (TFT) display process. This personalization was applied first to develop and demonstrate the world's largest flexible digital x-ray detector for medical and industrial imaging, and the world's first flexible ISFET pH biosensor using TFT technology. These new, flexible, digital x-ray detectors are more durable than conventional glass substrate x-ray detectors, and also can conform to the surface of the object being imaged. The new flexible ISFET pH biosensors are >10X less expensive to manufacture than comparable CMOS-based ISFETs and provide a sensing area that is orders of magnitude larger than CMOS-based ISFETs. This allows for easier integration with area intensive chemical and biological recognition material as well as allow for a larger number of unique recognition sites for low cost multiple disease and pathogen detection.
The flexible x-ray detector technology was then extended to demonstrate the viability of a new technique to seamlessly combine multiple smaller flexible x-ray detectors into a single very large, ultimately human sized, composite x-ray detector for new medical imaging applications such as single-exposure, low-dose, full-body digital radiography. Also explored, is a new approach to increase the sensitivity of digital x-ray detectors by selectively disabling rows in the active matrix array that are not part of the imaged region. It was then shown how high-resolution, flexible, organic light-emitting diode display (OLED) technology can be used to selectively stimulate and/or silence small groups of neurons on the cortical surface or within the deep brain as a potential new tool to diagnose and treat, as well as understand, neurological diseases and conditions. This work also explored the viability of a new miniaturized high sensitivity fluorescence measurement-based lab-on-a-chip optical biosensor using OLED display and a-Si:H PiN photodiode active matrix array technology for point-of-care diagnosis of multiple disease or pathogen biomarkers in a low cost disposable configuration.<br>Dissertation/Thesis<br>Doctoral Dissertation Electrical Engineering 2014
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Kabir, Salman. "Amorphous Silicon Dual Gate Thin Film Transistor & Phase Response Touch Screen Readout Scheme for Handheld Electronics Interactive AMOLED Displays." Thesis, 2011. http://hdl.handle.net/10012/5849.
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Interactive handheld electronic displays use hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) as a backplane and a Touch Screen Panel (TSP) on top as an input device.
The low mobility and instability of a-Si:H TFT threshold voltage are major two issues for driving constant current as required for Active Matrix Organic Light Emitting Ddiode (AMOLED) displays. Low mobility is compensated by increasing transistor width or resorting to more expensive material TFTs. On the other hand, the ever increasing threshold voltage shift degrades the drain current under electrical operation causing OLED display to dim.
Mutual capacitive TSP, the current cell phone standard, requires two layers of metals and a dielectric to be put in front of the display, further dimming the device and adding to visual noise due to sun reflection, not to mention increased integration cost and decreased yield.
This thesis focuses on the aforementioned technological hurdles of a handheld electronic display by proposing a dual-gate TFT used as an OLED current driving TFT and a novel phase response readout scheme that can be applied to a one metal track TSP.
Our dual-gate TFT has shown on average 20% increase in drive current over a single gate TFT fabricated in the same batch, attributed to the aid of a top channel to the convention bottom channel TFT. Furthermore the dual gate TFT shows three times the Poole-Frenkel current than the single gate TFT attributed to the increase in gate to drain overlap.
The dual-gate TFT shows a 50% improvement in threshold voltage shift over a single gate TFT at room temperature, but only ~8% improvement under 75ºC. This is an important observation as it shows an accelerated threshold voltage shift in the dual-gate. This difference in the rate of threshold voltage change under varying temperature is attributed to the difference in interface states, supporting Libsch and Kanicki’s multi-level temperature dependant dielectric trapping model.
The phase response TSP readout scheme requires IC only on one side of the display. Cadence Spectre simulation results showed that both touch occurrence and touch position can be obtained using only one metal layer.
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Su, Ching Ping, and 蘇智平. "An FPGA Design of Adaptive Local Backlight Control with Its Applications to the Thin Film Transistor Liquid Crystal Displayer (TFT-LCD) Circuit." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/26146428303293752284.
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碩士<br>長庚大學<br>電子工程學研究所<br>96<br>The direct LED backlight module is used for the TFT-LCD in the thesis. To divide the LEDs into many pieces of areas can make the backlight be controlled independently. By using the characteristics of LED’s fast response and FPGA’s image process can integrate the tints of backlight and image of LCD for each area. In the proposed framework, some LED those are not necessary to turn on can be turned off to save the power generated by backlight module. Finally, the adaptive local backlight control method is proposed, which can improve picture quality and contrast and furthermore can reduce the defect of aureola.
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Chang, Tien-Shan, and 張天山. "Applications of Low Dielectric Materials for Thin-Film-Transistor Display." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/05711143541082761944.
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碩士<br>國立清華大學<br>電子工程研究所<br>93<br>Abstract
In this thesis, we investigated the application of low-dielectric-constant (low-k) hydrogen silsesquioxane (HSQ) for thin-film-transistor (TFT) technology. Low-k HSQ has the properties of the high transmittance (>90% at 300~800 nm), low photo leakage current and good planarization for TFT passivation layer. In addition, it can effectively increase the aperture ratio of display matrix and reduce resistance-capacitance delay (RC delay). Therefore, the application of the low-k materials on TFT device has become one of the most important issue for flat panel display. In this study we have investigated one of the promising candidates of low-k dielectrics, hydrogen silsesquioxane (HSQ), for TFT array technology application.
In TFT process, temperature is the most important issue. In this study, the characteristics of devices after different process temperature, 350, 330 and 300℃, are discussed.
In conclusion, we have found that HSQ film has high illumination, low photo leakage current; thereby, the leakage of devices is little changed by illumination. Otherwise, the Si-H bonds of HSQ may passivated the dangling bonds on the channel surface and the characteristic of device for HSQ 300℃ passivation is improved. This indicates that HSQ is the most possible candidate to replace the conventional SiNx passivation layer on TFT device in the future.
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Huang, San-Hao, and 黃三豪. "Optical Design of Novel Thin Film Transistor (TFT) Auto Laser Repair Equipment." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/43053139906065513961.
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碩士<br>國立中興大學<br>精密工程學系所<br>98<br>Taiwan plays one of the world''s leading OEM panel production roles. However, in the fast booming panel industry, the ability to handle the defects on panels is not so strong. Especially when panel size gets larger and larger and shows defective symbols, the fixing technique will be of much importance. In response to this demand, the domestic companies are using laser technology to develop “ TFT Auto Laser Repair Equipment ”, but the machine core parts “ laser repair system ” needs being imported from U.S. and Japan, and the price is high.
In light of this, the main contribution of this thesis is to design “ laser repair system ”, with using of optics principle and optics software. We successfully design and simulate the internal optical components and the overall system. Thus our country has built our own design capability. In addition to “ laser repair system ”, a unique technology called “ fast fiber optic ” has been developed, which can be used to judge material defects on panels immediately. When this novel technique is integrated with the auto repair machine, this improved equipment can have the benefits of reducing human inspection errors and enhance the repair yield.
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Hunag, Yu-Sheng, and 黃育森. "Analysis of Color Filter Defects for Thin Film Transistor Liquid Crystal Display." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/ru33ks.
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碩士<br>中原大學<br>電子工程研究所<br>98<br>The technical report is to explore “key components of TFT-LCD color filter’s defect analysis and classification in various manufacturing process”. In this report, we will introduce the panel that in recent years has been a lot of use, makes its demand increased, so panel manufacturing plant to increase production and research and development of large size panels. However, the panel defects generated due to manufacturing environment and machine’s stability, resulting in panel yield fell, the cost increased .In order to improve this problem, In-line MQC mechanisms are established that glass substrates are inspected by a randomly sampling ratio in manufacturing process to prevent the occurrence of a large number of unqualified panels. But the current in-line MQC mechanisms are operated under a sampling ratio and are handled manually. To reduce human power, increase processing speed, inspect entire glass substrates and pass relative information to the online engineers immediately. Therefore, it is necessary to introduce automatic inspection machine system. for this technological report will introduce color filter process Then the equipment of the process and the defect cause will be analyzed. In the end, the test result of the “auto defect classification system automation will be the database
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Kan, Chun-Shan, and 甘俊山. "Luminance Improvement of Large-Scaled Thin-Film-Transistor Liquid-Crystal-Display Panel." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/75321543840700144624.
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碩士<br>國立成功大學<br>電機工程學系專班<br>94<br>The application of large-scaled Thin Film Transistor Liquid Crystal Display (TFT-LCD) is seen more popular nowadays, yet the problem of unequal luminance of panels is still an obstacle with the growing size of the panel. In view of such drawback, based on the use of frame rate control (FRC) and dynamic output enable concept, the thesis has proposed an integrated in anticipating of solving this problem.
In the method, the system-on-a-chip (SOC) was also developed, where the microprocessor, memory, digital circuit and analog circuit were all considered to be integrated. By which, it can both reduce the external wires and investment cost, while the stability of the system can be better maintained. It is expected that with the application of the proposed method in the TFT-LCD industry, the reduction of power consumption, the increment of yield rate, and the decrement of defect rate can be all benefited. This proposed approach also owns a practical value as the reference for the control IC design.
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Liu, Bin Lin, and 劉炳麟. "Applications of Low Dielectric Materials for Thin-Film-Transistor Display Matrix Technology." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/71918787374456579509.
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碩士<br>國立暨南國際大學<br>電機工程學系<br>92<br>In this thesis, we investigated the application of low-dielectric-constant (low-k) hydrogen silsesquioxane (HSQ) for thin-film-transistor (TFT) arrary technology. The adoption of low-k HSQ for TFT passivation layer can effectively increase the aperture ratio of display matrix, reduce resistance-capacitance delay (RC delay), exhibiting high optical transparency (90% at 300-800nm), good planarization properties and excellent gap-filling capability. In this study we have investigated one of the promising candidates of low-k dielectrics, hydrogen silsesquioxane (HSQ), for TFT array technology application. The leakage current conduction mechanism in HSQ films after O2, H2/O2 plasma treatments and photo illumination will be discussed extensively.
In comparison with chemical vapor deposited (CVD) low-k materials, HSQ films can be deposited using spin-on process which is a simpler technique. The quality of the low-k HSQ film dependents on the residual quantity of the Si-H bonds in the film after curing. A low dielectric constant can be achieved if the Si-H bonds in the HSQ film outnumber the Si-OH bonds. For the investigation of photo-induced leakage current, we have found that dangling bonds are easy to be generated during the processing of the HSQ films; thereby, a small amount of photo-induced leakage current can be generated via these traps in HSQ films. Fortunately, the level of photo-induced leakage current is acceptable for TFT array applications. However, the leakage current of HSQ film is increased more than an order of magnitude after O2-plasma treatment during photoresist stripping, and the conduction mechanism for the leakage current transferring from Schottky emission to ionic conduction. In this work, we found that an hydrogen plasma treatment of the HSQ films can improve the films quality. The leakage current in HSQ films subjected to H2-plasma treatment is decreased. In this work, we have proposed a model to explain the role of the hydrogen in HSQ film. The hydrogen can effectively passivate the surface of HSQ film. If the surface is not passivaed by hydrogen, much of those dangling bonds will remain on the surface. Dangling bonds can easily absorb moisture and form Si-OH bonds, which will result in higher dielectric constant and leakage current. Hydrogen plasma provides hydrogen to passivate the surface and reduce the dangling bonds content and moisture uptake.
In conclusion, we have found that HSQ film is insensitive to light illumination; thereby, photo-induced leakage current of HSQ film is negligent under photo radiation. This indicates that HSQ has potential possibilities for being applied to the application in TFT display panel as the passivation layer.
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Chaji, G. Reza. "Thin-Film Transistor Integration for Biomedical Imaging and AMOLED Displays." Thesis, 2008. http://hdl.handle.net/10012/3667.
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Thin film transistor (TFT) backplanes are being continuously researched for new applications such as active-matrix organic light emitting diode (AMOLED) displays, sensors, and x-ray imagers. However, the circuits implemented in presently available fabrication technologies including poly silicon (poly-Si), hydrogenated amorphous silicon (a-Si:H), and organic semiconductor, are prone to spatial and/or temporal non-uniformities.
While current-programmed active matrix (AM) can tolerate mismatches and non-uniformity caused by aging, the long settling time is a significant limitation. Consequently, acceleration schemes are needed and are proposed to reduce the settling time to 20 µs. This technique is used in the development of a pixel circuit and system for biomedical imager and sensor. Here, a metal-insulator-semiconductor (MIS) capacitor is adopted for adjustment and boost of the circuit gain. Thus, the new pixel architecture supports multi-modality imaging for a wide range of applications with various input signal intensities. Also, for applications with lower current levels, a fast current-mode line driver is developed based on positive feedback which controls the effect of the parasitic capacitance. The measured settling time of a conventional current source is around 2 ms for a 100-nA input current and 200-pF parasitic capacitance whereas it is less than 4 μs for the driver presented here.
For displays needed in mobile devices such as cell phones and DVD players, another new driving scheme is devised that provides for a high temporal stability, low-power consumption, high tolerance of temperature variations, and high resolution. The performance of the new driving scheme is demonstrated in a 9-inch fabricated display intended for DVD players. Also, a multi-modal imager pixel circuit is developed using this technique to provide for gain-adjustment capability. Here, the readout operation is not destructive, enabling the use of low-cost readout circuitry and noise reduction techniques.
In addition, a highly stable and reliable driving scheme, based on step calibration is introduced for high precision displays and imagers. This scheme takes advantage of the slow aging of the electronics in the backplane to simplify the drive electronics. The other attractive features of this newly developed driving scheme are its simplicity, low-power consumption, and fast programming critical for implementation of large-area and high-resolution active matrix arrays for high precision.
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Chuang, Chia-Tai, and 莊家泰. "The Improvement of Rubbing Process Defect of Thin-Film Transistor Liquid Crystal Display." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/10492034915265393581.
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碩士<br>國立高雄第一科技大學<br>機械與自動化工程研究所<br>99<br>This is a case study to do improvements of Rubbing process Defect of TFT- ( Thin Film Transistor) Liquid Crystal Panel. It is a study on Rubbing process cloth supplies over run times improvement of defect and improves the quality for TFT-LCD Panel.
The six sigma has many researches and case studies as an effective skill for a project improvement.The research follows six sigma “DMAIC” procedure using DOE(design of experiment) to analyze the defect of Rubbing Mura. Through the procedure of the research , the defect of yield decreases from “30.33~33.89%” to 0.%~0.5%.That is the defect and the quality of cell form from the rubbing process，is improvement dramatically.
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Chen, Yung-Chuan, and 陳勇全. "Thin film transistor liquid crystal display manufacturers to research glass substrate supplier evaluation." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/55292304536855590436.
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碩士<br>雲林科技大學<br>資訊管理系碩士班<br>98<br>With advancement in technology, the traditional CRT display industry has faded after the emergence of TFT-LCD industry. The development of the TFT-LCD industry in Taiwan is based on the industrial system of horizontal division of labor, thus having advantages of greater flexibility, fast response, and lower investment risks. However, the TFT-LCD industry is facing the unavoidable choice of strategic alliance, after the manufacturers underwent processes of withdrawal, alliance, and merger. Hence, the industrial competition is more severe than ever.Therefore, this paper aims to discuss the factors considered by TFT-LCD manufacturers when selecting glass substrate suppliers.
Based on literature review and internal evaluation standards of the TFT-LCD manufacturers, this study first generalized 13 factors, and invited 3 procurement exerts of the TFT-LCD industry to select 9 factors that are most concerned by TFT-LCD manufacturers. Each factor was used to measure its significance in the TFT-LCD industry by 2 to 10 items. After expert design and evaluation, the questionnaire was distributed to managers of 7 TFT-LCD manufacturers in Taiwan. The data were analyzed by Delphi Method to establish the selection criteria of the TFT-LCD manufacturers on glass substrate suppliers. Then, Fuzzy Analytic Hierarchy Process was used to determine the weight of each criterion, in order to establish the selection model for the glass substrate suppliers and discuss the significance of each factor to the TFT-LCD manufacturers.
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Shih, Chiung-Yi, and 施瓊詒. "Investigation on reliability & electrical analysis of polysilicon thin-film transistor for AMOLED display." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/92795183254878183178.
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碩士<br>國立中山大學<br>物理學系研究所<br>92<br>In this thesis, the dimension effects and reliabilities of the p-channel poly-Si TFTs for AMOLED are successfully characterized.
We have measured and compared the electrical behaviors of devices to study dimension and temperature effects in this experiment. The influences on the narrow channel width effects are also discussed and explained. It is found that the devices with narrow channel width, exhibit promotional turn-on current and smaller threshold voltage. In addition, the stress effects in p-channel poly-silicon thin-film transistors are investigated and characterized with various applied voltages. The stress effects are clearly analyzed by different methods, such as activation energy of leakage current, changing the definition of source and drain for Vg-Id curve, and C-V measurements. Finally, a physical model was proposed to well explain the results we observed.
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Chen, Chia-min, and 陳佳旻. "Treatment of Thin Film Transistor Liquid Crystal Display Wastewater by Fluidized-bed Fenton process." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/48263497735043474955.
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碩士<br>嘉南藥理科技大學<br>環境工程與科學系暨研究所<br>99<br>The mass production value of thin film transistor liquid crystal display (TFT-LCD) in Taiwan, which is second in the world next to Korea, will reach one trillion NT dollars yearly in the near future. However, the resulting wastewater will also increase to approximately 200,000 m3/day. The main component of this wastewater is ethanolamine(MEA) and phosphorus(P).
Advanced oxidation processes (AOPs) are efficient methods for degrading toxic chemicals. One of these processes, the Fluidized-bed crystallization and Fenton process, was used for the treatment of the TFT-LCD wastewater to remove the monoethanolamine and phosphorus.
In the design of experiment, the Box-Behnken design was used to optimize the operating conditions. The selected factors were initial pH, P/Fe2+ and HRT with the phosphorus removal as the response function. As a result of the degradation of this wastewater by Fluidized-bed crystallization process. The selected factors were initial Fe+2 concentration, H2O2 concentration and pH with the MEA removal as the response function. As a result of the degradation of this wastewater by Fluidized-bed Fenton process.
In Fluidized-bed crystallization process removal efficiency of 58.3% for 10mM phosphorus was achieved after 2 hours under optimal conditions of pH = 7, [P/Fe2+] = 1.3 and [HRT] = 120min; A removal efficiency of 98.9% for 5mM MEA was achieved after 2 hours under optimal conditions of pH = 3, [Fe2+] = 5mM and [H2O2] = 50mM on Fluidized-bed Fenton process. Then used Fluidized-bed crystallization Fenton processes in TFT-LCD Synthetic wastewater treatment, the total removal and Crystal efficiency were 45.13% and 30.5%, respectively, the MEA removal efficiency can still reach 76.15%.
For the mineralization, MEA and TOC removal efficiencies were examined and the results show that even MEA could completely remove from the solution, however, TOC was still very high. This is probably due to the intermediates that might occur in the reaction. IC was used to identify intermediates in the reaction and the results reveal that during Fluidized-bed Fenton process, there are formation of Acetic acid.
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Su, Tai-yuan, and 蘇泰元. "Applying Fuzzy Image Processing Technology to InspectDefects of Thin Film Transistor-Liquid Crystal Display." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/73184727989255886773.
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碩士<br>國立臺灣科技大學<br>自動化及控制研究所<br>97<br>The final step of the thin film transistor-liquid crystal display (TFT-LCD) manufacturing process, where the TFT panel board undergoes the edge trimming process, may chap the edge of TFT panel board. The damage on the terminal department usually causes a short circuit, which will destruct the performance of the entire TFT panel board and decrease the product’s quality. Therefore, applying the automatic inspection system is crucial to this process, which examines the trimmed edge and protects the terminal department from harm.
In this research we used matching by correlation theory to locate the cross mark. In this theory we proposed a new method to construct an average pattern and a new threshold for selector function. These two approaches can increase the accuracy of the positioning. With edge inspection, we use the concept of maximum gradient descent method to locate the three glass layers on the TFT panel board. This concept additionally indicated that the threshold of this method was very robust. Regarding the inspection of the terminal department, we combined the fuzzy theory and image processing technology to create a fuzzy operator, which contains a 5x5 mask, the function of curve analysis, and the fuzzy system. The capability of this operator was adopted to examine the curve structure, which represents a defect since the terminal department should only contain straight lines. The fuzzy operator used the concept of the image pyramid theory, which allowed the fuzzy operator to examine the extreme size of defects. Our results indicated that the fuzzy operator on applied defect inspection had 2% of false acceptance rate, 1.5% of false rejection rate, and 96.5% of overall recognition rate.
The TFT panel board was further examined by proposed edge inspection system if the board needed to undergo the edge trimming process again. The fuzzy operator was again used in assurance of the quality of the terminal department.
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Kuo, Chein-Wen, and 郭倩彣. "Ergonomics Hazards Evaluation and Improvement Design in Thin Film Transistor Liquid Crystal Display Factories." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/39091050942056439484.
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Chang, Ting-Yu, and 張廷宇. "Design of Peripheral Circuits for Low-TemperaturePolycrystalline Silicon Thin-Film Transistor-Liquid Crystal Display." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/89194368591527087876.
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碩士<br>國立中興大學<br>電機工程學系所<br>94<br>This thesis is about peripheral circuits of TFT-LCDs by using low temperature polysilicon (LTPS) process. A novel charging pump circuit and a novel Digital-to-Analog Converter (DAC) had been developed.
Because traditional Dickson charge pump circuit features low efficiency and huge output ripple. In the novel charging pump circuit, it uses a new complementary architecture which has smaller ripple voltage and reaches 84.21% of the power efficiency.
According as a traditional R-string DAC had a large area, the capacitor ratio of the traditional weighted-capacitor DAC was hard to control accuracy, a traditional switch-capacitor DAC had a long transfer time, and a traditional current DAC needed a set I-V converter. In the novel DAC circuit, it uses a switch-capacitor architecture. For the DAC, the power consumption is better than traditional SC-DAC and the circuit area was decreased significantly compared with traditional R-String DAC. The novel DAC has low integral nonlinearity error (INL) and differential nonlinearity Error (DNL) within one LSB.
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Lin, Yen-Chung, and 林彥仲. "Applications of Poly-Silicon Thin Film Transistor for Active-Matrix Organic Light-Emitting Display." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/48432533928427530993.
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Wang, Li Wen, and 王麗雯. "Optimum pixel design of multi-domain vertical alignment thin film transistor liquid crystal display." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/11403834161438900588.
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碩士<br>長庚大學<br>電子工程學系<br>99<br>This paper major in optimization pixel design of multi-domain vertical alignment liquid crystal display, using the simulation software for MVA LCD pixels to simulate the configuration of MVA bump, ITO main slit and fine slit, consider optimum optical performance of the MVA LCD
(for example: brightness, contrast ratio, transmittance, viewing angle and response time, etc.) and build up the pixel design rules of MVA LCD. In addition, to find out the relationship of different bump heights collocated with different main slit and fine slit configuration for response
time. Analyzing the results of simulation and real panels to get the correct simulation setup and build up the pixel design rules of MVA LCD.
Final optimum design parameters are: main slit space > 8µm, bump height > 1.7µm, the optical characteristic are: transmittance ~ 4.6%,contrast ratio > 1400, response time &lt; 25msec and no image retention phenomenon.
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Chiou, Chi-Ming, and 邱啟明. "The method for checking alignment accuracy of a thin film transistor (TFT) by TEG test." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/44027398025017740963.
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碩士<br>中原大學<br>電子工程研究所<br>100<br>Today’s TFT LCD Panel Makers use optical measurement to measure the distance of patterns exposed by two different masks to present the alignment accuracy of two mask . But it is hard to do a lot of alignment accuracy check，because the optical measurement’s tact time is very long for each inspection . This article mainly introduced the method for checking alignment accuracy of a thin film transistor (TFT)，the switch is using the Mask Overlap relations to form a open or non-open circuit and combine the Array TEG(Test Element Group) for checking alignment accuracy.
It was found the design of space GE/PE should be 3.5um，because after wet etching process it will become to 2um，it means that the overlap of GE/PE is almost about 1um，will match the control spec of Overlap for LCD Maker.
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Lai, Erh-Kun, and 賴二琨. "Process Integration of 3D Thin Film Transistor (TFT) NAND Flash and Resistive Random Access Memory." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6jcdv2.
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Tung-Han, Wu, and 吳東翰. "The Thin-Film-Transistors (TFTs) for the Application of Electrophoretic Display (EPD) and Monolithic Three Dimension Integrated Circuit (3D-IC)." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/02410280298740200826.
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碩士<br>國立臺灣師範大學<br>光電科技研究所<br>100<br>Humanity, mobility, and personalization have always been the trend of development regarding electronics. The features, such as the ease of maintenance, convenience of portability, comfort of touch, low degree of attrition, and ease of rolling, etc., will soon become the mainstream in the development of multi-functional electronics. However, the electronic techniques featuring traditional Si-wafer and glass substrate are not able to meet these requirements. With regard to this, the portable consumer electronics has a tendency to be light, thin, and bending. The development of high reliability of flexible transistor process is, therefore, one of the important techniques to influence the future. The purpose of this experiment is to simulate a variety of parameters with simulation software, with the mechanical measurement under different kinds of circumstances to both obtain and build the model. Moreover, concerning the design of IC, the structure of 3D-ICs is suitable for the design of IC, thus decreasing area. In the process of continuous manufacturing of 3D-ICs, the cost will be more likely to be reduced when it is operated without contact line. According to the experience of the Display, Poly-Si TFT holds much lower manufacturing temperature. For the structure of 3D-ICs, the cells in the base are not likely to transform due to the low temperature. Because of k-value is about 25, high endurance of heat, and wide bandgap, the property of cells works significantly better. Therefore, among the choice of High-k materials, this experiment adopted HfO2, which is widely used in oxide.
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Yang, Chug-Ming, and 楊家銘. "Design of Driving Circuits for Low-Temperature Polycrystalline Silicon Thin-Film Transistor-Liquid Crystal Display." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/57198924951406201375.
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碩士<br>國立中興大學<br>電機工程學系<br>93<br>In this thesis, the novel driving circuits of thin-film transistor-liquid crystal displays (TFT-LCDs), which included shift registers, digital/analog converters (DAC) and DC/DC converters, were developed by using low-temperature polycrystalline silicon (LTPS) technology.
For conventional shift registers, because larger circuit area or more controlled signals, a novel shift register consists of only two clock signals and nine transistors in an unit cell was proposed. The proposed shift registers decreased circuit area and double the frequency of the pixel clock. The novel shift register can apply for data drivers and scan drivers of LCDs.
For DACs, due to the conventional R-string DAC had larger area and the switch-capacitor type DAC (SC-DAC) takes longer conversion time, the resolution of TFT-LCDs was limited. For this reason, we developed a novel fast-switch-capacitor DAC (FSC-DAC) for LCD panels with higher resolution (XGA and above). For the FSC-DAC, the conversion time is only half of the conventional SC-DAC and the circuit area was decreased significantly compared with conventional R-String DAC.
The DC/DC converter was designed as external circuits. A novel complementary charge pump was proposed and it provided steady output voltage during positive and negative clock periods. The output voltages of the proposed four-stage charge pump were 5VDD and -4VDD for positive and negative polarity, respectively. The maximum power efficiency of the complementary charge pump reached to 71%.
Finally, the proposed shift register and the FSC-DAC were fabricated by using the 1P2M LTPS process technology and the design rule is 5 μm. The proposed DC/DC converter was fabricated by using the TSMC 0.35 μm 2P4M CMOS process technology.
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Peng, Yu-Chin, and 彭郁芩. "Implementation on the electrical characteristic of thin film transistor liquid crystal display by six sigma." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/vksard.
Full textAbstract:
碩士<br>中原大學<br>工業與系統工程研究所<br>102<br>In order to enhance companies’ competitiveness and keep sustainable development in the changeable environment, enterprises have to keep pursuing innovation and improving their weakness all the time. This study is to study a case company, which has manufactured many kinds of panels for more than 40 years. For facing the fluctuating market, the case company wants to enhance its competitiveness and earn more profits. Therefore, the case company took some actions, including implementing new manufacturing processes, shortening product development processes, adjusting the product-mix flexibly, and manufacturing high added-value products.
The motivation of this study was to investigate a project that was reported a poor quality issue. The quality issue could not be solved by the technology transferring company. The goal of this study was to organize a project team for solving this problem. With the implementation of quality projects for years, the project team of the case company used the five steps of Six Sigma, which consisted of Define, Measure, Analyze, Improve, and Control, to reduce the number of defects caused by manufacturing processes. The results of the project met customers’ satisfaction with products’ quality and improved orders’ filling rates.
Through the implementation of the project, this study showed that Six Sigma could improve performance of manufacturing processes and achieve the research purpose. The experience of this project could be viewed as a reference for managers to implement similar projects in order to create more economic profits in the future.
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Yeh, Chin-Wei, and 葉晉維. "Respirator fit among emergency responders in a thin-film-transistor liquid-crystal display manufacturing facility." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/89r8sy.
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ZHENG, JIN-FU, and 鄭進福. "Construction of thin film transistor LCD panel display end One Drop Filling Process Forecasting Mode." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/ya9s5w.
Full textAbstract:
碩士<br>國立中正大學<br>資訊管理學系碩士在職專班<br>105<br>In the past decades, Taiwan was proud of TFT-LCD optoelectronics industry. Nowadays, facing international competitors and industry characteristics influenced by the economy of rapid globalization wheeled, it encounter survival crisis. For the crucial moment, various domestic industries are taking efforts to develop new the application of new technology or process technology to deal with this strange and varied industry. However, while domestic and foreign manufacturers are trying to breakthroughs, should the self-quality feedback to be considered to enhance the yield of production? Production yield is major competitiveness to production business. It not only influences utilization rate of various cost producers, but also roles the key business success factor. Therefore, how to enhance the competitiveness of the industrial yield is the important issue that every producer needs to face. Like discussed above, TFT-LCD panel industry is facing critical challenges. In addition to the technical specifications of self-promotion, to improve the quality basic yield should start from the fundamental. The ODF process is the extreme end of the TFT-LCD industry Glass critical process, and the production yield of TFT-LCD production influence overall cost more than 50%. How to increase industrial competitiveness by improving the process yield, improve the production yield and increase production efficiency by optimizing the production process or machine parameters is the key to survive in this strict and difficult market.
This study is designed based on the data mining technology of industry 4.0. Small and medium size TFT-LCD panel manufacturer as target, through the current process parameters settings for each process, select study variables by different respectively attributes, and find out the key elements that impact the yield.
First of all, getting data from researched object, select one set of attributes for the study target by Expert rule of thumb. Next, select impacting research topic attribute variables by weka.attributeSelection.GainRatioAttributeEval module. Finally, compile yield influenced factors from references, and then construct these three dimension reduction methods based on the result.
After all research variables are pre-processed, take three sets of study variables, analyze and explore the impact of property hidden knowledge through data mining techniques four categories.
Keywords: TFT-LCD panel ODF process, Industry 4.0, dimension reduction, data mining.
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Lee, Ming-Jiu, and 李銘周. "Analysis and Classification of In-line Defect Inspection for Thin Film Transistor Liquid Crystal Display." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/45817767495209791135.
Full textAbstract:
碩士<br>中原大學<br>機械工程研究所<br>96<br>Over the last decade, thin-film-transistor liquid-crystal-display (TFT-LCD), as display, has grown rapidly, and has almost replaced the market of cathode ray tube (CRT) monitor. The total value of photoelectric industry has exceeded the one of semiconductor. It has been a glaring industry that the government promotes actively. The manufacturing process of TFT-LCD, including array process, cell process and module assembly process, will be introduced in this technical report. Through the introduction, the importance of inline defect inspection in array process will be pointed out and detailed.
In current practice, there are several equipments used for in-line inspection: automatic optical inspection (AOI) machine, micro-review machine, macro/micro machine, and critical-dimension overlap machine. These machines are used for inspecting various kinds of defects in different processes of the manufacturing. The defects are classified and analyzed according to the corresponding engineering. Therefore, the task of in-line inspection is able to enhance the yield rate and increase the business benefit.
To achieve the goals of inspection efficiency, yield enhancement, and the production-cost reduction, the future works for inline inspection will be focused on automation and knowledge management. As for the inspection equipment, the key issues will be focused on several points, including how to enlarge the size of equipment, how to improve the accuracy of the measurement, and how to lift the efficiency. These are adapt to the large-size LCD panels, and are the future trends for the design of inspection equipment.
In the final we will discuss the future works including the knowledge management and the automatic defect classification. In TFT-LCD manufacturing, there are some unknown defects actually. Due to unknown defects, a high and satisfactory defect classification rate can not be obtained. For solving this problem, it is necessary to develop a knowledge management system to improve the defect classification accuracy. In addition, several techniques, such as image processing, statistical texture extraction, data mining and neural network-based classification, can be used and integrated to achieve the goal of real-time defect recognition. The above-mentioned refers to the automatic defect-classification system.
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Cheng-ILin and 林政儀. "Studies of Novel Technologies to Prepare Thin Film Transistor for Large Scale Panel Display Applications." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/00735975945861604317.
Full textAbstract:
博士<br>國立成功大學<br>微電子工程研究所<br>102<br>Generally, the thin film transistor (TFT) for a large panel should have the characteristics of high channel mobility, large on-current and low leakage. Besides, it also needs small size and high transparence to attain high aperture ratio. To match these requirements, in this thesis, we studied the novel technologies to promote conventional a-Si TFT performances and use of indium gallium zinc oxide (IGZO) instead of a-Si as active layer to enhance channel mobility and device transparence.
In the conventional a-Si TFT, first, we optimized the phosphorus (P) doping concentration in the source / drain (S/D) n+ layer to transfer the deposited Si film from an amorphous structure to the nano one, thus achieving the lowest S/D contact resistance .As a result, both on-current and on/off current ratio were improved up to 370% and 1515 %, respectively.
Next, we employed the layer by layer technology with a hot wire chemical vapor deposition system (HWCVD) to directly deposit high quality nano-Si film , and then used a post hydrogen anneal (PHA) to treat the film surface. The experimental results showed that the PHA could improve (about 10%) both saturation and off currents. Especially for a multilayer channel structure, the improvement became more obviously.
Furthermore, the high performance amorphous InGaZnO full transparent thin film transistors (TTFT) with both single and double channel were prepared on glass substrate and studied in details. In the double channel TTFT, the rapid thermal annealed ZnO was added as the second channel and used to buffer the InGaZnO deposition. Besides, we used the Al2O3 as the HfO2 gate dielectric barrier to lower gate leakage. As a result, both technologies promote ~ 3 orders in on/off current ratio and reduce leakages current ~ 800 times, and improve the average transparence from 84% to 86.4 % in the range of 500nm-800nm wavelengths.
In the thesis, except the novel technologies studies, we also investigate these improvement origins and illustrate them in details with the comprehensive the schematic diagrams.
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Chen, Lei-Guang, and 陳雷光. "A LTPS (Low temperature polysilicon) TFT (Thin-film transistor) Chip for Dielectrophoretic Manipulation and Bio-detection." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/12593496600019510167.
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碩士<br>國立清華大學<br>電子工程研究所<br>98<br>This study has successfully used LTPS TFT process technology to design a bio chip that can perform dielectrophoretic (DEP) manipulation and optical detection. The LTPS process has the benefit of less post-processing steps required than the CMOS (complementary metal oxide semiconductor) process to realize the chip. In addition, the process can provide a large chip area at low cost. Reliability, however, is the main issue that the LTPS process has to improve.
The basic principle of DEP force and its mathematical model will be presented. CFD-RC software is utilized for simulation to ensure microbeads can be successfully moved to the target electrodes based on our design. Bio-detection is achieved by using image sensors. H-spice simulation is used to verify the feasibility of the circuit design. In the experiments, a thin layer of silicon dioxide is deposited on chip surface for surface functionalization and biomolecule immobilization. Immobilized microbeads can be moved to the target microelectrodes by DEP and produce specific bindings with the immobilized biomolecules on sensor surface. Those beads are successfully detected by the optical sensors underneath microelectrodes to validate the bio-recognition event.
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Pathirane, Minoli. "Improved Overlay Alignment of Thin-film Transistors and their Electrical Behaviour for Flexible Display Technology." Thesis, 2010. http://hdl.handle.net/10012/5672.
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The integration of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with plastic substrates enables emerging technologies such as flexible organic light emitting diode (OLED) displays. Current a-Si fabrication processes, however, create residual thin film stress that affects the underlying flexible substrate due to its high mismatch in the coefficient of thermal expansion resulting in a dimensional instability for fabricating TFTs on large area flexible substrates. The motivation of this thesis is to reduce this non-uniformity and improve fabrication throughput of bottom-gated inverted-staggered a-Si:H TFTs on flexible substrates. This thesis therefore encompasses the study of overlay misalignment on TFTs over 3 inch flexible substrates and investigates the electrical characteristics of the TFTs fabricated on plastic platforms.
To reduce overlay misalignment of TFTs fabricated on flexible substrates, a plastic-on-carrier lamination process has been developed. The technique comprises of a polyimide tape to attach a 125 um-thick poly-ethylene-napthalate (PEN) flexible substrate to a rigid carrier. This process has been used to minimize stress induced strain of the PEN substrate during the fabrication process; strain, which has been observed after processing a-Si:H TFTs on free-standing substrates. This technique would in turn assist in fabricating uniform stacked-layers as required for a-Si:H TFT fabrication on the PEN substrates. Overlay misalignment is measured after each of the 5 consecutive lithographic steps at 4 corner-most edges of the PEN substrates using a standard optical microscope. Results have shown an overlay misalignment reduction from 21 um to 2 um on average based on the TFTs fabricated on free-standing flexible substrates while ensuring a centre alignment accuracy of +/- 0.5 um. Post fabrication adhesive removal to separate the PEN substrate from the rigid carrier has been accomplished by sample immersion in acetone. The results present a significant increase in fabrication throughput by reducing lithographic overlay misalignment such that the resolution of large-area flexible electronics would be enhanced. Electrical characteristics show the average performance of a-Si:H TFTs with an ON/OFF current ratio of 10^8, field effect mobility of ~0.8 cm^2/Vs, and gate leakage current of 10^-13 A.
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Hein, Moritz. "Organic Thin-Film Transistors: Characterization, Simulation and Stability." Doctoral thesis, 2013. https://tud.qucosa.de/id/qucosa%3A28703.
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Organic thin film transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These benefits are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose.
In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced that are intensively characterized and used as a basis for later device simulation. Therefore, among others 4-point-probe measurements are used for a potential mapping of the transistor channel and via transfer line method the contact resistance is measured in a temperature range between 173 and 353 K.
From later comparison with the simulation models, it appears that the geometrical resistance is actually more important for the transistor performance than the resistance of charge-carrier injection at the electrodes. The charge-carrier mobility is detailed evaluated and discussed. Within the observed temperature range a Arrhenius-like thermal activation of the charge- carrier transport is determined with an activation energy of 170 meV. Furthermore, a dependence of the electric field-strength of a Poole-Frenkel type is found with a Poole-Frenkel factor of about 4.9 × 10E−4 (V/m) −0.5 that is especially important for transistors with small channel length. With these two considerations, already a good agreement between device simulation and measurement data is reached. In a detailed discussion of the dependence on the charge-carrier density and from comparison with established the charge-carrier mobility models, an exponential density of states could be estimated for the organic semiconductor.
However, reliability of OTFTs remains one of the most challenging hurdles to be understood and resolved for broad commercial applications. In particular, bias-stress is identified as the key instability under operation for numerous OTFT devices and interfaces. In this work, a novel approach is presented that allows controlling and significantly alleviating the bias-stress effect by using molecular doping at low concentrations. For pentacene as semiconductor and SiO2 as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias-stress is explained in terms of the shift of Fermi level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. For transistors prepared in cooperation with the industrial partner, a second effect is observed that can be explained by a model considering a ferroelectric process in the dielectric and counteracts the bias-stress behavior.:1. Introduction and Motivation 10
2. Organic Semiconductors and Thin-Film Transistors 12
2.1. Fundamentals of Organic Semiconductors 12
2.1.1. Structural and Electronic Properties 12
2.1.2. Polarons and Trap States 15
2.1.3. Doping of Organic Semiconductors 16
2.2. Charge-Carrier Transport in Organic Semiconductors 18
2.2.1. Field-Effect Mobility 18
2.2.2. Gaussian Disorder Model 21
2.2.3. Variable-Range Hopping Models 24
2.2.4. Fishchuk Model 26
2.3. Organic Field-Effect Transistors 27
2.3.1. Transistor Geometry 27
2.3.2. Transistor Equations 29
2.3.3. Evaluation of Mobility 32
2.3.4. Threshold Voltage 34
2.3.5. Contact Resistance 35
2.3.6. Au-SAMs 38
2.3.7. Dielectric 39
2.3.8. Scaling and Short Channel Effects 41
2.3.9. Stability and Bias-Stress 43
2.4. Device Simulation 44
3. Materials and Methods 46
3.1. Materials 46
3.2. Sample Preparation 50
3.2.1. Sample Preparation in cooperation with the industrial partner 51
3.2.2. Sample Preparation at IAPP 52
3.2.3. Staggered Transistors at IAPP 56
3.3. Sample Characterization 57
3.3.1. Electrical Measurement Setup 57
3.3.2. Parameter Extraction 60
3.3.3. Contact Resistance 61
3.3.4. Kelvin-Probe Atomic Force Microscopy 64
3.3.5. UPS Measurement 65
4. Organic Field-Effect Transistors - Experiment and Simulation 67
4.1. Bottom-Gate Transistors 67
4.1.1. Semiconductors 67
4.1.2. Bipolar Transport 72
4.1.3. Electrode Treatments 74
4.1.4. Channel Treatments 77
4.1.5. Polymer Transistors 79
4.2. Polymer Transistors at Room Temperature 85
4.2.1. Parameter Extraction 85
4.2.2. Four-Point-Probe Measurements 90
4.2.3. Transferline Methode 96
4.2.4. UPS Measurements 100
4.3. Cryostat Measurements 102
4.3.1. Transistor Characteristics 102
4.3.2. Contact Resistance 105
4.3.3. Density of States 107
4.4. Transistor Simulation 110
4.4.1. Introduction of Device Simulation with Genius 110
4.4.2. Mesh and Geometry 111
4.4.3. Contact Resistance of Charge-Carrier Injection 112
4.4.4. Temperature Dependent Simulations 114
4.4.5. Implementation of Donor Traps 116
4.4.6. Poole-Frenkel Discussion 118
4.4.7. Contact Resistance of Geometry 122
4.4.8. Simulation with Advanced Mobility Models 123
4.5. Bias-Stress Reliability 128
4.5.1. Bias-Stress Phenomena 128
4.5.2. Doped Transistors 136
4.5.3. Polymer Transistors 145
5. Conclusion and Outlook 150
A. Appendix 154
A.1. Charge-Carrier Mobility measurements for solar cell materials 154
A.2. Simulation pictures 154
B. Bibliography 160
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Tsao, Shu-wei, and 曹書瑋. "Investigation on Reliability & Electrical Analysis of a-Si:H Thin Film Transistor used in Flexible Display." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/27700815193163515219.
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碩士<br>國立中山大學<br>物理學系研究所<br>93<br>Based on the convenience of the use, the traditional display will be replace by the flexible display. According to this reason, it is very important to study on the reliability of the amorphous silicon (a-Si:H) thin-film transistor (TFT) used in LCD under different mechanical strain. In this research, besides of the above-mentioned we also applied AC stress, to understand the influence of AC stress on an a-Si:H TFT under different mechanical strain.
The influence of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length and width on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.
We also researched on the influence of uniaxial compressive (tensile) strain on the performance of a-Si:H TFTs under different AC stress conditions. When the a-Si:H TFTs were strained and applied AC stress, we found the performance of a-Si:H TFTs were affected more then the flat ones.
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Lin, Hung-Lin, and 林宏霖. "Study on reaction kinetics characteristics of Thin-film transistor liquid crystal display wastewater by SBR bioreactor." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/85818759161977365861.
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碩士<br>國立成功大學<br>環境工程學系碩博士班<br>94<br>Due to the increasing production rate of the Opto-electronic industry in Taiwan, the amount of pollutants produced in the manufacturing process of TFT-LCD (Thin-film transistor liquid crystal display) also increases. In the year of 2003, the amount of TFT-LCD manufacturing solid waste was 25,723.5 ton/year. Also, the amount of wastewater in TFT-LCD wastewater manufacturing process will be approximately 200,000 CMD in the near future. According to some studies, organic wastewater accounts for more than 33% of the total TFT-LCD manufacturing wastewater. The main components of this organic wastewater are composed of the stripper (DMSO&MEA), developer (TMAH) and chelating agents.
In this study, the performance of A/O (anoxic/oxic) and aerobic SBR (sequencing batch reactor) in treating TFT-LCD manufacturing wastewater is discussed. A/O SBR achieved good removal rate for DMSO, MEA and TMAH. In run I and run II, the removal rate of all three substance is more than 98%. For aerobic SBR, the removal rate of MEA and TMAH achieved 100%. But the removal rate of DMSO is not good at the beginning. After 71 days, the removal rate improved to 100%. Hence, A/O and aerobic SBR can treat TFT-LCD manufacturing wastewater effectively.
On the other hand, batch tests are conducted to study the mechanism of the degradation of TFT-LCD manufacturing wastewater. In the tests, the degradation of DMSO, MEA and TMAH under aerobic, anoxic and anaerobic condition is discussed. The substrate of the tests contains DMSO, MEA and TMAH.
For DMSO, specific DMSO utilization rate under aerobic and anoxic condition is both lower than 5 mg DMSO/g VSS-hr. In anaerobic condition, the specific DMSO utilization rate of group (250mg/L DMSO, 150mg/L MEA and 70mg/L TMAH) is 24.54 mg DMSO/g VSS-hr. The specific DMSO utilization rate of the other group (400 mg/L DMSO, 250 mg/L MEA and 100 mg/L TMAH) is 14.06 mg DMSO/g VSS-hr. Therefore, the degradation of DMSO under anaerobic condition is better than the other two. But for getting better specific DMSO utilization rate under anaerobic condition, additional carbon source other than DMSO is necessary.
For MEA, specific MEA utilization rate under anaerobic condition is low (under 5.6 mg MEA/g VSS-hr). The best specific MEA utilization rate is 51.81 mg MEA/g VSS-hr in group (50mg/L DMSO, 130mg/L MEA and 30mg/L TMAH) under anoxic condition. The specific MEA utilization rate of other groups under aerobic and anoxic condition lies between 12 and 27 mg MEA/g VSS-hr. Hence, the specific MEA utilization rate is better under aerobic and anoxic condition.
For TMAH, specific TMAH utilization rate is low under anaerobic and anoxic condition (< 3.3 mg TMAH/g VSS-hr). Under aerobic condition, the specific TMAH utilization rate lies between 5.3 and 17.5 mg TMAH/g VSS-hr, which is the best among the three conditions.
Overall, DMSO can be effectively degraded under anaerobic condition. But for TMAH degradation, aerobic condition gets the best result. MEA can degraded efficiently under both aerobic and anoxic condition.
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Chiu, Chih-Ping, and 邱志平. "Investigation and analysis on Illumination & electrical characteristics of polysilicon thin-film transistor for AMLCD display." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/20190205921473965699.
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碩士<br>清雲科技大學<br>電機工程研究所<br>94<br>Recently, poly silicon thin film transistors (poly-Si TFTs ) have been applied in many aspects such as memory, active matrix liquid crystal display (AMLCDs) and so on. Main reason for this because the field effect mobility of poly-Si TFT is almost 100 times higher than that of amorphous silicon thin film transistor.
Among different applications, poly Si TFT has been utilized to manufacture pixel switching devices and display-related peripheral driver circuits. It is realized that, with the technology of poly Si TFT, fabrication of large area flat panel liquid crystal display based on glass structure has been a long term trend. Thus, it is very important to focus studies on reliability and electrical characteristic of poly Si TFT.
In this thesis, the aim is to study photo sensitivity of poly silicon thin film transistors under different manufacture process such as ELA(.excimer laser annealing) and SLS(sequential lateral solidification).We use backlight source board to shine the bottom of device and observe the effects of device characteristic under various channel dimensions. Due to the different manufacture process cause the various location of grain boundary. Since properties of poly Si TFT like threshold voltage, electrical mobility, subthreshold swing etc. will be degraded due to hot carrier effect, it is the main target to investigate the defect energy gap distribution raised from that effect through electricity analysis. The relationship between operation voltage and defect density will be established as well in this research. It is hoped that information resulted from this thesis can be useful for technology and product development in TFT industry.
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Liang, Er-Chien, and 梁爾謙. "Analysis of the Development Strategy of Taiwanese Amorphous Thin Film Transistor Liquid Crystal Display Panel Manufacturers." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/85683945789236011968.
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碩士<br>國立臺灣大學<br>商學研究所<br>91<br>In 2010, the total demand for TFT-LCD panels based solely on notebook computers and desktop TFT-LCD monitors is expected to reach 280 million units, and the market value should exceed US$46Billion. This potential demand fits in Taiwan TFT-LCD panel manufacturers’ current product lines perfectly. We anticipate the value of Taiwan TFT-LCD Display Industry in 2003 should be greater than US$8.7 Billion. Based on these figures, we conclude the TFT-LCD Panels Industry will have an influential and vital role in Taiwan’s economic life from now on.
Favoring market expectation, and experiencing fast and dramatic changes through technology evolutions has led TFT-LCD panel manufacturers to make continuous and heavy investment in manufacturing equipment. This requirement for continuous capital investment does not hinder Mainland China enterprises from entering into this industry, and pursuing the market opportunities. How Taiwanese TFT-LCD manufacturers can position themselves and build up competitive advantages to cope with severe competition from Korean and Japanese panel manufacturers will be a crucial issue. Another critical task for all TFT-LCD panel manufacturers is how to deal with the price erosion trends, which are caused by capacity expansion.
This study, through collecting, deciphering data from past development of TFT-LCD industry, and performing “ Five-Forces”, “SWOT” analysis, has generated development strategy recommendations for today’s Taiwanese TFT-LCD panel manufacturers. Hopefully, these recommendations can help domestic panels manufacturers to win this brutal war.
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Cheng, Wei-Yuan, and 鄭為元. "Study on image sticking of thin-film transistor liquid-crystal-display with color filter on array." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/91765651174398604784.
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碩士<br>國立中興大學<br>光電工程研究所<br>100<br>Image sticking of thin-film transistor liquid-crystal-display (TFT-LCD) has been extensively researched in recent years. Most researches on image sticking are based on the ion model. Image sticking phenomenon may vary with device structure, process methods, and driving condition, thus effects of a new process (i.e. color filter on array (COA) process) on image sticking are worthy to investigate.
The purpose of this thesis is to investigate the effects of the COA process on image sticking of TFT-LCDs and to improve it. For the COA process, three different color filter materials, (i.e. red, green, and blue color resists), were coated on TFT structure, then the image sticking was observed on the final panel. In this work, we changed the dielectric constant of the color resist, gamma voltage, common voltage (Vcom) and passivation layer process recipe to explore causes of image sticking. Findings showed that image sticking mainly resulted from the different dielectric constant between R, G, and B color resists. Accordingly, material, process methods and driving condition were modified to improve image sticking within an acceptable level.
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Lee, Tsung-Han, and 李宗翰. "Characterization and Preparation of Nano-SiGe Thin Film and Its Applications for TFT in Flat Panel Display." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/45546651221137572012.
Full textAbstract:
碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>94<br>Thin film transistors (TFTs) have been employed extensively to drive and address each pixel in the flat panel displays. Amorphous TFTs have the advantages of low temperature and simple deposition, but also possess the drawback of poor current driving ability. Instead, poly-silicon TFTs are widely studied for their high mobility. However, the high fabrication temperature prevents it from using glass substrate. On the other hand, the low temperature poly-silicon (LTPS) that usually annealed with excimer laser annealing (ELA) on amorphous silicon still have the non-uniformity issue for production in large area and the extra annealing also cost a lot.
In this thesis, we developed the nc-SiGe thin films with a novel method of layer-by-layer hydrogen plasma treatment. This method is not only effective but also compatible to the convention amorphous silicon TFTs technology. The nc-SiGe films have higher mobility than amorphous silicon films and can be uniformly deposited at low temperature (250℃). Additionlly, we optimized the best growth parameters to fabricate the p-type, n-type and intrinsic type nc-SiGe, respectively. Furthermore, we also investigated physical and electrical characteristics of the films by Fe-SEM, AFM, Hall measurement, Raman spectrum and XRD, correspondingly. Finally, we apply the developed nc-SiGe thin films to prepare TFT and studied their performance for flat panel display applications.