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Dissertations / Theses on the topic 'Transistors'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. An

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2

Cerutti, Robin. "Transistors à grilles multiples adaptés à la conception." Grenoble INPG, 2006. http://www.theses.fr/2006INPG0174.

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"En technologie MOS sur silicium, les transistors de type "double grille" (DG) sont considérés comme les meilleurs candidats pour les nœuds technologiques 32 et 22 nm de ITRS. Avec l'apparition de différentes architectures (FINFET, TriGate, Planar DG,. . . ) il est important de concevoir une intégration simple et compatible avec les requêtes circuit. Ce travail de thèse prend en compte les intéractions entre la conception et la technologie afin de définir des technologies tridimensionelles basées sur le module SON ("Silicon On Nothing"). De nouveaux transistors ont été inventés et développés e

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3

Lee, Yi-Che. "Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53472.

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The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave and quasi-static I-V and C-V measurements were carried out to characterize the fabricated III-N transistors and diodes. The GaN/InGaN direct-growth HBTs (DG-HBTs) grown on free-standing GaN (FS-GaN) substrates demonstrated a high current gain (hfe) > 110, high current density (JC) > 141 kA/cm2, and high power density (Pdc) > 3 MW/cm2. The fir

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4

Ozório, Maíza da Silva. "Estudo de compósitos de tips-pentaceno para aplicações em transistores /." Presidente Prudente, 2016. http://hdl.handle.net/11449/152818.

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Orientador: Neri Alves<br>Banca: Edson Laureto<br>Banca: Carlos José Leopoldo Constantino<br>Resumo: Um dos atuais desafios da eletrônica orgânica é a obtenção de semicondutores com alta mobilidade que forme filmes com boa morfologia quando depositado/impresso por solução, resultando em boa uniformidade e reprodutibilidade dos dispositivos. O poli(3- hexiltiofeno) (P3HT) e o 6,13-(triisopropilsililetinil)pentaceno (TP) estão entre os semicondutores orgânicos mais utilizados. O TP tem como característica a formação de estruturas cristalinas, e desse modo, apresenta mobilidade muito maior que o

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5

Ricci, Simona. "Liquid-gated transistors for biosensing applications." Doctoral thesis, Universitat Autònoma de Barcelona, 2020. http://hdl.handle.net/10803/670786.

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En aquesta tesi, hem estudiat diferents aspectes relacionats amb transistors orgànics, en particular transistors orgànics electroquímics d’efecte de camp (EGOFETs) i transistors orgànics electroquímics (OECTs). Els dispositius EGOFET es van fabricar dipositant a partir de dissolucions de semiconductors orgànics (OSC) basats en molècules conjugades barrejats amb polímers aïllants, mitjançant la tècnica de Bar-assisted meniscus shearing (BAMS). BAMS és una tècnica ràpida, de baix cost i escalable que permet la formació de pel·lícules cristal·lines i uniformes. Els EGOFET van ser estudiats pel d

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6

Tachi, Kiichi. "Etude physique et technologique d'architectures de transistors MOS à nanofils." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00721968.

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Il a été démontré que la structure gate-all-around en nanofils de silicium peut radicalement supprimer les effets de canaux courts. De plus, l'introduction d'espaceurs internes entre ces nanofils peut permettre de contrôler la tension de seuil, à l'aide d'une deuxième grille de contrôle. Ces technologies permettent d'obtenir une consommation électrique extrêmement faible. Dans cette thèse, pour obtenir des opérations à haute vitesse (pour augmenter le courant de drain), la technique de réduction de la résistance source/drain sera débattue. Les propriétés de transport électronique des NWs empil

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7

Acosta, Sandra Massulini. "Projeto de amplificadores operacionais CMOS utilizando transistores compostos em "sea-of-transistors"." reponame:Repositório Institucional da UFSC, 1997. https://repositorio.ufsc.br/handle/123456789/111588.

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8

Huang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.

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Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and

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9

Xu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs." Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.

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10

Krumm, Jürgen. "Circuit analysis methodology for organic transistors = Methodik zur Schaltungsanalyse für organische Transistoren." kostenfrei, 2008. http://deposit.d-nb.de/cgi-bin/dokserv?idn=989071553.

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11

Birkin, Peter Robert. "Microelectrochemical enzyme transistors." Thesis, University of Southampton, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240628.

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12

Ridley, Brent (Brent Alan) 1974. "Printed inorganic transistors." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/62382.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, School of Architecture and Planning, Program in Media Arts and Sciences, 2003.<br>Includes bibliographical references (leaves 146-175).<br>Forty years of exponential growth of semiconductor technology have been predicated on the miniaturization of the transistors that comprise integrated circuits. While complexity has greatly increased within a given area of processed silicon, the cost per area has not decreased. Current fabrication methods are further hindered by high facility costs and environmentally unfriendly processing. Moving to a

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13

Kaphle, VIkash. "Organic Electrochemical Transistors." Kent State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1576594504410991.

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14

Khelifi, Wafa. "Modélisation multi-ports des transistors hyperfréquences." Thesis, Limoges, 2018. http://www.theses.fr/2018LIMO0100/document.

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Ce document traite de la caractérisation et la modélisation des transistors multi-ports. Une caractérisation des transistors pHEMT à base de l'AsGa est réalisée. Une importance particulière est donné aux méthodes de caractérisation RF sous pointes. En effet, une étude sur les méthodes d’épluchage est réalisée. Ensuite, après avoir relevé un défaut dans la méthode choisie (à savoir la méthode Pad-Open-Short), une solution est proposée concernant les standards non idéaux. Finalement, des modèles non linéaires 3 et 4 ports sont développés, ils ont pour objectifs de réduire le temps, des phases de

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15

Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semico

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16

Bakhtiar, Hazri CHARLES JEAN PIERRE. "CARACTERISATION DE STRUCTURES MOS SUBMICRONIQUES ET ANALYSE DE DEFAUTS INDUITS PAR IRRADIATION GAMMA. EXTRAPOLATION AUX DEFAUTS INDUITS DANS LES OXYDES DE CHAMP DES TRANSISTORS BIPOLAIRES /." [S.l.] : [s.n.], 1999. ftp://ftp.scd.univ-metz.fr/pub/Theses/1999/Bakhtiar.Hazri.SMZ9934.pdf.

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17

Kisner, Alexandre 1982. "Desenvolvimento de Microssensores do tipo ISFETs a base de Nanoeletrodos de Ag e Au." [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/248385.

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Orientador: Lauro Tatsuo Kubota<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Química<br>Made available in DSpace on 2018-08-08T22:44:52Z (GMT). No. of bitstreams: 1 Kisner_Alexandre_M.pdf: 3973690 bytes, checksum: 2810b47ecfaaac028a1bf271a3fc25a0 (MD5) Previous issue date: 2007<br>Conjuntos de transistores de efeito de campo sensíveis a íons (ISFETs) foram desenvolvidos no presente trabalho. Implementou-se durante a fabricação destes uma etapa adicional de anodização que possibilitou a formação de uma fina camada de alumina porosa sobre suas portas. Esta serviu

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18

Li, Jian Ming. "Evaluation des possibilités fréquentielles des transistors bipolaires de puissance haute tension." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0049.

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Cette étude vise les possibilités d'utilisation des T. B. P. H. T. Dans les convertisseurs à résonance à des fréquences de quelques centaines de kHz et des puissances de quelques dizaines de kw. Pour atteindre cet objectif, une modélisation analytique uni-dimensionnelle du semi-conducteur est proposée: elle permet d'obtenir les caractéristiques de la commande de base aux fréquences correspondantes et d'analyser les performances fréquentielles des circuits de base aux fréquences correspondantes et d'analyser les performances fréquentielles des circuits de base classiques. Les synthèses de comma

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19

Suvar, Erdal. "SiGeC Heterojunction Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674.

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<p>Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.</p><p>Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. Th

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20

Hein, Moritz. "Organic Thin-Film Transistors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Organic thin ﬁlm transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These beneﬁts are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced th

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21

Rawcliffe, Ruth. "Polymer field-effect transistors." Thesis, Imperial College London, 2006. http://hdl.handle.net/10044/1/8889.

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22

Zhu, Wen Wei. "Organic thin film transistors." Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19597.

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Organic thin film transistors (OTFTs) have been fabricated using four different semiconducting polymers: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), polyhedral oligomeric silsesquioxanes (POSS) poly (2-methoxy-5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene) (MEH-PPV-POSS), poly[N-(3-methylphenyl)-N,N-diphenylamine-4,4'-diyl] (poly-TPD), and polyhedral oligomeric silsesquioxanes (POSS) poly (N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD-POSS). These OTFTs were fabricated on heavily doped «-type silicon wafers with thermally grown silicon dioxide layer was

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23

Georgakopoulos, Stamatis. "Polymer field-effect transistors." Thesis, University of Surrey, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.582857.

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High Ionisation Potential (IP) amorphous conjugated polymers are very practical semiconductors and promising candidates for printing applications as they exhibit 1) high air-stability due to the high IP, and 2) reproducible electrical performance due to the uniformity of amorphous morphology. However they generally exhibit low mobilities on the order of 10-3 cm2Ns and below. This work is based mainly on two high-IP amorphous conjugated polymers poly(indenofluorene-triarylamine) (PIFTAA) and poly(indenofluorene- phenanthrene) (PIFPA). The long term ambient stability of PIFTAA and PIFPA with IPs

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24

Chua, L. L. "Organic field-effect transistors." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597679.

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In this thesis, we demonstrated that divinyltetramethyldisiloxane-benzocyclobutene (BCB), which has previously been used as an isolation dielectric in III-IV semiconductor devices, in fact makes an excellent gate dielectric material in OFETs after suitable purification. Robust ultra-thin films with high glass transition temperature and high dielectric breakdown strength can be obtained by simple spin-coating followed by rapid-thermal-anneal to above 250°C. With this material, we were able to demonstrate remarkable performance in polymer OFETs and explore several aspects of their physics. In Ch

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25

Yang, Ming-Hsun. "Carbon nanotube based transistors." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613983.

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26

Liu, Jiang. "Light-Emitting Electrochemical Transistors." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-104925.

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Since the discovery of conductive polymers in 1977, the implementation of organic conjugated materials in electronic applications has been of great interest in both industry and academia. The goal of organic electronics is to realize large-area, inexpensive and mechanically-flexible electronic applications. Organic light emitting diodes (OLEDs), as the first commercial product made from organic conjugated polymers, have successfully demonstrated that organic electronics can make possible a new generation of modern electronics. However, OLEDs are highly sensitive to materials selection and requ

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27

Vaziri, Sam. "Graphene Hot-electron Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-186044.

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Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. In an optimized GBT, the ultimate thinness of the graphene-base and its high conductivity, potentially, enable HF performance up to the THz region. This thesis presents an experimental investigation on the GBTs as well as integration process developments for the

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28

Mitter, Chang Su. "Insulated gate bipolar transistor (IGBT) simulation using IG-Spice." Thesis, This resource online, 1991. http://scholar.lib.vt.edu/theses/available/etd-03022010-020115/.

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29

AL-SHADEEDI, AKRAM. "LATERAL AND VERTICAL ORGANIC TRANSISTORS." Kent State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=kent1492441683969202.

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30

Lamontagne, Maurice. "Development of a statistical model for NPN bipolar transistor mismatch." Link to electronic thesis, 2007. http://www.wpi.edu/Pubs/ETD/Available/etd-053007-105648/.

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31

Nguyen, Van Hoang. "Transistor Quantique InAs à Electrons Chauds : Fabrication submicronique et étude à haute fréquence." Thesis, Montpellier 2, 2012. http://www.theses.fr/2012MON20084/document.

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Transistor Quantique InAs à Electrons Chauds: Fabrication submicronique et étude à haute fréquenceL'objectif de cette thèse est le développement de la technologie d'un transistor à électrons chauds constitué d'une hétérostructure quantique InAs/AlSb et exploitant un transport électronique résonant ultrarapide, le QHET (Quantum Hot Electron Transistor). Ce travail a permis l'étude approfondie de ses propriétés et performances à haute fréquence. L'étude aborde tous les aspects, de la conception, la croissance épitaxiale, la technologie de fabrication à la caractérisation statique et dynamique. C

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32

Mori, Carlos Augusto Bergfeld. "Estudo comparativo do efeito de autoaquecimento em transistores FinFET e SOI UTBB." Universidade de São Paulo, 2018. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-04052018-103903/.

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Devido às dimensões cada vez mais reduzidas dos transistores e a utilização de novos materiais com baixa condutividade térmica, o desempenho de transistores avançados é afetado pelo autoaquecimento. Dispositivos sob os efeitos de autoaquecimento sofrem um aumento da sua temperatura, fazendo com que a mobilidade seja reduzida, além de comprometer a confiabilidade e gerar atrasos de sinal, trazendo impactos na eficiência de circuitos analógicos, bem como afetando o desempenho de circuitos digitais. Apesar da relevância do fenômeno, muitos estudos não o levam em consideração devido à dificuldade

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33

Nogueira, Gabriel Leonardo. "Preparação e caracterização de um transistor orgânico de efeito de campo com arquitetura vertical /." Bauru, 2016. http://hdl.handle.net/11449/144580.

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Orientador: Neri Alves<br>Banca: Ivo Alexandre Hummelgen<br>Banca: Clarissa de Almeida Olivati<br>Resumo: O transistor orgânico de efeito de campo com arquitetura vertical (VOFET) possibilita contornar as principais limitações de um transistor orgânico de efeito de campo (OFET) convencional. Nesta estrutura, as camadas são empilhadas verticalmente, de modo que os eletrodos de fonte e dreno são separados pela camada semicondutora e o comprimento do canal definido pela espessura do filme semicondutor. Para o VOFET proposto, utilizou-se Al e Al2O3 (obtido por anodização) como eletrodo e dielétric

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34

Morais, Rogério Miranda. "Desenvolvimento de transístores para a eletrônica impressa /." Presidente Prudente, 2020. http://hdl.handle.net/11449/192597.

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Orientador: Neri Alves<br>Resumo: Nesta tese de doutorado são apresentados resultados a respeito da fabricação e caracterização de dois tipos de transístores com eletrólito no gate (EGTs, do inglês Electrolyte Gated Transistors): Transístores eletroquímicos orgânicos (OECTs, do inglês Organic Electrochemical Transistors) e transístores de dupla camada elétrica (EDLTs, do inglês Electric Double Layer Transistor). Os dispositivos foram produzidos utilizando inkjet printing e screen printing para imprimir soluções à base de polímeros como o poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (

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Belkhir, Amina. "Contribution à la modélisation des transistors organiques." Reims, 2009. http://theses.univ-reims.fr/exl-doc/GED00001089.pdf.

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Ce travail porte sur l’étude de la modélisation du transistor organique ainsi que son implémentation numérique. L’objectif est la prise en compte des spécificités des matériaux organiques dans le calcul des caractéristiques courant-tension du transistor, de manière à permettre une analyse physique du comportement des transistors, et par suite de pouvoir agir sur les paramètres technologiques de fabrication, et améliorer les performances des composants et des circuits. Dans un premier temps, un modèle semi-analytique 1D a été développé, sur la base du modèle du transistor MOS silicium en prenan

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Razafindrakoto, Mirijason Richard. "Modèle hydrodynamique de transistor MOSFET et méthodes numériques, pour l'émission et la détection d'onde électromagnétique THz." Thesis, Montpellier, 2017. http://www.theses.fr/2017MONTS035/document.

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Du fait de ses propriétés intéressantes, le domaine de fréquence térahertz (THz) du spectre électromagnétique peut avoir de nombreuses applications technologiques, de l'imagerie à la spectroscopie en passant par les télécommunications. Toutefois, les contraintes technologiques empêchant l'émission et la détection efficaces de ces ondes par des systèmes conventionnels ont valu à cette partie du spectre électromagnétique le nom de gap THz. Au cours des deux dernières décennies, plusieurs solutions novatrices sont apparues. Parmi elles, l'utilisation de transistors à effet de champ s'est imposée

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37

Chen, Qiang. "Scaling limits and opportunities of double-gate MOSFETS." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/15011.

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Aurangabadkar, Nilesh Kirti Kumar. "Simulations of analog circuit building blocks based on radiation and temperature-tolerant SIC JFET Technologies." Master's thesis, Mississippi State : Mississippi State University, 2003. http://library.msstate.edu/etd/show.asp?etd=etd-05162003-114102.

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39

Villarroel, Marquez Ariana A. "Multimodal sensing polymer transistors for cell and micro-organ monitoring." Thesis, Bordeaux, 2018. http://www.theses.fr/2018BORD0449.

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Le développement de nouveaux matériaux pour augmenter les performances des capteurs biologiques est très important lorsqu'on sait que les signaux électriques constituent la base des évènements biologiques fondamentaux comme l’activité cérébrale, le battement du coeur ou la sécrétion hormonale. Ces signaux cellulaires sont souvent enregistrés avec des sondes qui nécessitent des modifications génétiques ou chimiques. Cependant, des signaux intrinsèques pourraient être exploités directement. Des matrices de microélectrodes extracellulaires (MEAs) et des transistors électrochimiques à base de poly

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Kim, Jungbae. "Organic-inorganic hybrid thin film transistors and electronic circuits." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34683.

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Thin-film transistors (TFTs) capable of low-voltage and high-frequency operation will be required to reduce the power consumption of next generation electronic devices driven by microelectronic components such as inverters, ring oscillators, and backplane circuits for mobile displays. To produce high performance TFTs, transparent oxide-semiconductors are becoming an attractive alternative to hydrogenated amorphous silicon (a-Si:H)- and organic-based materials because of their high electron mobility vlaues and low processing temperatures, making them compatible with flexible substrates and open

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Ditz, Marc William Legori. "S-parameter modeling of two-port devices using a single, memoryless nonlinearity." Thesis, This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-03172010-020656/.

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42

Gondro, Elmar. "Hochfrequenz-Modellierung des MOS-Transistors." [S.l.] : [s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=967606586.

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43

Chu, Kan Man. "Modeling of tunnel oxide transistors." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/29076.

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Two improvements to a comprehensive analytic model which describes the steady-state current in a metal-insulator-semiconductor tunnel junction are reported. The first modification replaces the conventional two-band representation of the thin oxide band structure with a one-band model. In this approach the electron barrier height for tunneling is always less than the hole barrier height by an amount equal to the semiconductor band gap. The second improvement enables the energy dependence of the electron and hole tunneling probability factors to be taken into account. This is accomplished by exp

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44

Panda, Durga Prasanna. "Nanocrystalline silicon thin film transistors." [Ames, Iowa : Iowa State University], 2006.

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Qian, Feng. "Thin film transistors in polysilicon /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,162.

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Larsson, Oscar. "Polyelectrolyte-Based Capacitors and Transistors." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67852.

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Polymers are very attractive materials that can be tailored for specific needs and functionalities. Based on their chemical structure, they can for instance be made electrically insulating or semiconducting with specific mechanical properties. Polymers are often processable from a solution, which enables the use of conventional low-cost and high-volume manufacturing techniques to print electronic devices onto flexible substrates. A multitude of polymer-based electronic and electrochemical devices and sensors have been developed, of which some already has reached the consumer market. This thesi

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Fjer, Mouhsine. "Strained Si heterojunction bioploar transistors." Thesis, University of Newcastle Upon Tyne, 2011. http://hdl.handle.net/10443/1290.

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This dissertation addresses the world’s first demonstration of strained Si Heterojunction Bipolar Transistors (sSi HBTs). The conventional SiGe Heterojunction Bipolar Transistor (SiGe HBT), which was introduced as a commercial product in 1999 (after its first demonstration in 1988), has become an established device for high-speed applications. This is due to its excellent RF performance and compatibility with CMOS processing. It has enabled silicon-based technology to penetrate the rapidly growing market for wide bandwidth and wireless telecommunications once reserved for more expensive III–V

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48

Tavares, Pedro Alexandre Cadinha. "Superconducting Josephson vortex flow transistors." Thesis, University of Strathclyde, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.248330.

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Robins, Ian. "Gas sensitive field effect transistors." Thesis, King's College London (University of London), 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318466.

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Cobden, David Henry. "Individual defects in mesoscopic transistors." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386908.

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