Artículos de revistas sobre el tema "CBRAM"
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Cao, Haichao y Hao Ren. "A 10-nm-thick silicon oxide based high switching speed conductive bridging random access memory with ultra-low operation voltage and ultra-low LRS resistance". Applied Physics Letters 120, n.º 13 (28 de marzo de 2022): 133502. http://dx.doi.org/10.1063/5.0085045.
Texto completoAbbas, Haider, Jiayi Li y Diing Shenp Ang. "Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications". Micromachines 13, n.º 5 (30 de abril de 2022): 725. http://dx.doi.org/10.3390/mi13050725.
Texto completoCha, Jun-Hwe, Sang Yoon Yang, Jungyeop Oh, Shinhyun Choi, Sangsu Park, Byung Chul Jang, Wonbae Ahn y Sung-Yool Choi. "Conductive-bridging random-access memories for emerging neuromorphic computing". Nanoscale 12, n.º 27 (2020): 14339–68. http://dx.doi.org/10.1039/d0nr01671c.
Texto completoKim, Hae Jin. "Recent Progress of the Cation Based Conductive Bridge Random Access Memory". Ceramist 26, n.º 1 (31 de marzo de 2023): 90–105. http://dx.doi.org/10.31613/ceramist.2023.26.1.07.
Texto completoHsu, Chih-Chieh, Po-Tsun Liu, Kai-Jhih Gan, Dun-Bao Ruan y Simon M. Sze. "Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film". Nanomaterials 11, n.º 9 (27 de agosto de 2021): 2204. http://dx.doi.org/10.3390/nano11092204.
Texto completoGoux, Ludovic, Janaki Radhakrishnan, Attilio Belmonte, Thomas Witters, Wouter Devulder, Augusto Redolfi, Shreya Kundu, Michel Houssa y Gouri Sankar Kar. "Key material parameters driving CBRAM device performances". Faraday Discussions 213 (2019): 67–85. http://dx.doi.org/10.1039/c8fd00115d.
Texto completoAziz, Jamal, Honggyun Kim y Deok-Kee Kim. "(Digital Presentation) Power Efficient Transistors with Low Subthreshold Swing Using Abrupt Switching Devices". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1283. http://dx.doi.org/10.1149/ma2022-02351283mtgabs.
Texto completoMerkel, Cory, Dhireesha Kudithipudi, Manan Suri y Bryant Wysocki. "Stochastic CBRAM-Based Neuromorphic Time Series Prediction System". ACM Journal on Emerging Technologies in Computing Systems 13, n.º 3 (13 de mayo de 2017): 1–14. http://dx.doi.org/10.1145/2996193.
Texto completoSuri, Manan, Damien Querlioz, Olivier Bichler, Giorgio Palma, Elisa Vianello, Dominique Vuillaume, Christian Gamrat y Barbara DeSalvo. "Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses". IEEE Transactions on Electron Devices 60, n.º 7 (julio de 2013): 2402–9. http://dx.doi.org/10.1109/ted.2013.2263000.
Texto completoRehman, Shania, Muhammad Farooq Khan, Sikandar Aftab, Honggyun Kim, Jonghwa Eom y Deok-kee Kim. "Thickness-dependent resistive switching in black phosphorus CBRAM". Journal of Materials Chemistry C 7, n.º 3 (2019): 725–32. http://dx.doi.org/10.1039/c8tc04538k.
Texto completoQin, Shengjun, Zhan Liu, Guo Zhang, Jinyu Zhang, Yaping Sun, Huaqiang Wu, He Qian y Zhiping Yu. "Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory". Physical Chemistry Chemical Physics 17, n.º 14 (2015): 8627–32. http://dx.doi.org/10.1039/c4cp04903a.
Texto completoSouchier, E., F. D'Acapito, P. Noé, P. Blaise, M. Bernard y V. Jousseaume. "The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories". Physical Chemistry Chemical Physics 17, n.º 37 (2015): 23931–37. http://dx.doi.org/10.1039/c5cp03601a.
Texto completoChoi, Yeon-Joon, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho y Byung-Gook Park. "Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach". Physical Chemistry Chemical Physics 23, n.º 48 (2021): 27234–43. http://dx.doi.org/10.1039/d1cp04637c.
Texto completoJameson, J. R., P. Blanchard, J. Dinh, N. Gonzales, V. Gopalakrishnan, B. Guichet, S. Hollmer et al. "(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow". ECS Transactions 75, n.º 5 (23 de septiembre de 2016): 41–54. http://dx.doi.org/10.1149/07505.0041ecst.
Texto completoMuto, Satoshi, Ryota Yonesaka, Atsushi Tsurumaki-Fukuchi, Masashi Arita y Yasuo Takahashi. "Observation of Conductive Filament in CBRAM at Switching Moment". ECS Transactions 80, n.º 10 (25 de octubre de 2017): 895–902. http://dx.doi.org/10.1149/08010.0895ecst.
Texto completoShimeng Yu y H. S. Philip Wong. "Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)". IEEE Transactions on Electron Devices 58, n.º 5 (mayo de 2011): 1352–60. http://dx.doi.org/10.1109/ted.2011.2116120.
Texto completoMahalanabis, Debayan, Rui Liu, Hugh J. Barnaby, Shimeng Yu, Michael N. Kozicki, Adnan Mahmud y Erica Deionno. "Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays". IEEE Transactions on Nuclear Science 62, n.º 6 (diciembre de 2015): 2606–12. http://dx.doi.org/10.1109/tns.2015.2478382.
Texto completoGonzalez-Velo, Yago, Adnan Mahmud, Wenhao Chen, Jennifer Lynn Taggart, Hugh J. Barnaby, Michael N. Kozicki, Mahesh Ailavajhala, Keith E. Holbert y Maria Mitkova. "Radiation Hardening by Process of CBRAM Resistance Switching Cells". IEEE Transactions on Nuclear Science 63, n.º 4 (agosto de 2016): 2145–51. http://dx.doi.org/10.1109/tns.2016.2569076.
Texto completoLatif, M. R., P. H. Davis, W. B. Knowton y M. Mitkova. "CBRAM devices based on a nanotube chalcogenide glass structure". Journal of Materials Science: Materials in Electronics 30, n.º 3 (15 de diciembre de 2018): 2389–402. http://dx.doi.org/10.1007/s10854-018-0512-0.
Texto completoKwon, Ki-Hyun, Dong-Won Kim, Hea-Jee Kim, Soo-Min Jin, Dae-Seong Woo, Sang-Hong Park y Jea-Gun Park. "An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)". Journal of Materials Chemistry C 8, n.º 24 (2020): 8125–34. http://dx.doi.org/10.1039/d0tc01325k.
Texto completoSimanjuntak, Firman Mangasa, Julianna Panidi, Fayzah Talbi, Adam Kerrigan, Vlado K. Lazarov y Themistoklis Prodromakis. "Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices". APL Materials 10, n.º 3 (1 de marzo de 2022): 031103. http://dx.doi.org/10.1063/5.0076903.
Texto completoKwon, Kyoung-Cheol, Myung-Jin Song, Ki-Hyun Kwon, Han-Vit Jeoung, Dong-Won Kim, Gon-Sub Lee, Jin-Pyo Hong y Jea-Gun Park. "Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor". Journal of Materials Chemistry C 3, n.º 37 (2015): 9540–50. http://dx.doi.org/10.1039/c5tc01342a.
Texto completoCho, Hyojong y Sungjun Kim. "Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory". Nanomaterials 10, n.º 9 (29 de agosto de 2020): 1709. http://dx.doi.org/10.3390/nano10091709.
Texto completoLee, Daeseok, Sami Oukassi, Gabriel Molas, Catherine Carabasse, Raphael Salot y Luca Perniola. "Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM". IEEE Journal of the Electron Devices Society 5, n.º 4 (julio de 2017): 283–87. http://dx.doi.org/10.1109/jeds.2017.2693220.
Texto completoGan, Kai-Jhih, Po-Tsun Liu, Dun-Bao Ruan, Yu-Chuan Chiu y Simon M. Sze. "Annealing effects on resistive switching of IGZO-based CBRAM devices". Vacuum 180 (octubre de 2020): 109630. http://dx.doi.org/10.1016/j.vacuum.2020.109630.
Texto completoTan, Yung-Fang, Min-Chen Chen, Yu-Hsuan Yeh, Chung-Wei Wu, Tsung-Ming Tsai, Ting-Chang Chang, Sheng-Yao Chou, Yen-Che Huang y Simon M. Sze. "Utilizing high pressure hydrogen annealing to realize forming free CBRAM". Materials Science and Engineering: B 296 (octubre de 2023): 116619. http://dx.doi.org/10.1016/j.mseb.2023.116619.
Texto completoZhang, Bo, Vitezslav Zima, Tomas Mikysek, Veronika Podzemna, Pavel Rozsival y Tomas Wagner. "Multilevel resistive switching in Cu and Ag doped CBRAM device". Journal of Materials Science: Materials in Electronics 29, n.º 19 (3 de agosto de 2018): 16836–41. http://dx.doi.org/10.1007/s10854-018-9778-5.
Texto completoSenapati, Asim, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta y Siddheswar Maikap. "Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM". Electronics 9, n.º 7 (7 de julio de 2020): 1106. http://dx.doi.org/10.3390/electronics9071106.
Texto completoSu, Chaohui, Linbo Shan, Dongliang Yang, Yanfei Zhao, Yujun Fu, Jiande Liu, Guangan Zhang, Qi Wang y Deyan He. "Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices". Microelectronic Engineering 247 (julio de 2021): 111600. http://dx.doi.org/10.1016/j.mee.2021.111600.
Texto completoTaggart, J. L., W. Chen, Y. Gonzalez-Velo, H. J. Barnaby, K. Holbert y M. N. Kozicki. "In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment". IEEE Transactions on Nuclear Science 65, n.º 1 (enero de 2018): 192–99. http://dx.doi.org/10.1109/tns.2017.2779860.
Texto completoSong, Jeonghwan, Jiyong Woo, Seokjae Lim, Solomon Amsalu Chekol y Hyunsang Hwang. "Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications". IEEE Electron Device Letters 38, n.º 11 (noviembre de 2017): 1532–35. http://dx.doi.org/10.1109/led.2017.2757493.
Texto completoZhao, Jiayi, Qin Chen, Xiaohu Zhao, Gaoqi Yang, Guokun Ma y Hao Wang. "Self-compliance and high-performance GeTe-based CBRAM with Cu electrode". Microelectronics Journal 131 (enero de 2023): 105649. http://dx.doi.org/10.1016/j.mejo.2022.105649.
Texto completoZhao, Xiaolong, Sen Liu, Jiebin Niu, Lei Liao, Qi Liu, Xiangheng Xiao, Hangbing Lv et al. "Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer". Small 13, n.º 35 (24 de febrero de 2017): 1603948. http://dx.doi.org/10.1002/smll.201603948.
Texto completoYuan, Huanmei, Tianqing Wan y Hao Bai. "Resistive Switching Characteristic of Cu Electrode-Based RRAM Device". Electronics 12, n.º 6 (20 de marzo de 2023): 1471. http://dx.doi.org/10.3390/electronics12061471.
Texto completoBerco, Dan y Tseung-Yuen Tseng. "A numerical study of multi filament formation in metal-ion based CBRAM". AIP Advances 6, n.º 2 (febrero de 2016): 025212. http://dx.doi.org/10.1063/1.4942209.
Texto completoRadhakrishnan, J., A. Belmonte, L. Nyns, W. Devulder, G. Vereecke, G. L. Donadio, P. Kumbhare et al. "Impact of La–OH bonds on the retention of Co/LaSiO CBRAM". Applied Physics Letters 117, n.º 15 (12 de octubre de 2020): 151902. http://dx.doi.org/10.1063/5.0021250.
Texto completoLim, Seokjae, Myounghoon Kwak y Hyunsang Hwang. "Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems". IEEE Transactions on Electron Devices 65, n.º 9 (septiembre de 2018): 3976–81. http://dx.doi.org/10.1109/ted.2018.2857494.
Texto completoSankaran, K., L. Goux, S. Clima, M. Mees, J. A. Kittl, M. Jurczak, L. Altimime, G. M. Rignanese y G. Pourtois. "Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack". ECS Transactions 45, n.º 3 (27 de abril de 2012): 317–30. http://dx.doi.org/10.1149/1.3700896.
Texto completoGopalan, C., Y. Ma, T. Gallo, J. Wang, E. Runnion, J. Saenz, F. Koushan, P. Blanchard y S. Hollmer. "Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process". Solid-State Electronics 58, n.º 1 (abril de 2011): 54–61. http://dx.doi.org/10.1016/j.sse.2010.11.024.
Texto completoJeon, Yu-Rim, Yawar Abbas, Andrey Sergeevich Sokolov, Sohyeon Kim, Boncheol Ku y Changhwan Choi. "Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device". ACS Applied Materials & Interfaces 11, n.º 26 (7 de junio de 2019): 23329–36. http://dx.doi.org/10.1021/acsami.9b05384.
Texto completoFujii, Shosuke, Jean Anne C. Incorvia, Fang Yuan, Shengjun Qin, Fei Hui, Yuanyuan Shi, Yang Chai, Mario Lanza y H. S. Philip Wong. "Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance". IEEE Electron Device Letters 39, n.º 1 (enero de 2018): 23–26. http://dx.doi.org/10.1109/led.2017.2771718.
Texto completoShin, Jong Hoon, Qiwen Wang y Wei D. Lu. "Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers". IEEE Electron Device Letters 39, n.º 10 (octubre de 2018): 1512–15. http://dx.doi.org/10.1109/led.2018.2868459.
Texto completoYuhao Wang, Hao Yu y Wei Zhang. "Nonvolatile CBRAM-Crossbar-Based 3-D-Integrated Hybrid Memory for Data Retention". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, n.º 5 (mayo de 2014): 957–70. http://dx.doi.org/10.1109/tvlsi.2013.2265754.
Texto completoArita, Masashi, Yuuki Ohno y Yasuo Takahashi. "Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface". physica status solidi (a) 213, n.º 2 (17 de diciembre de 2015): 306–10. http://dx.doi.org/10.1002/pssa.201532414.
Texto completoBelmonte, A., G. Reale, A. Fantini, J. Radhakrishnan, A. Redolfi, W. Devulder, L. Nyns et al. "Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices". Solid-State Electronics 184 (octubre de 2021): 108058. http://dx.doi.org/10.1016/j.sse.2021.108058.
Texto completoDietrich, Stefan, Michael Angerbauer, Milena Ivanov, Dietmar Gogl, Heinz Hoenigschmid, Michael Kund, Corvin Liaw et al. "A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control". IEEE Journal of Solid-State Circuits 42, n.º 4 (abril de 2007): 839–45. http://dx.doi.org/10.1109/jssc.2007.892207.
Texto completoTaggart, J. L., R. B. Jacobs-Gedrim, M. L. McLain, H. J. Barnaby, E. S. Bielejec, W. Hardy, M. J. Marinella, M. N. Kozicki y K. Holbert. "Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects". IEEE Transactions on Nuclear Science 66, n.º 1 (enero de 2019): 69–76. http://dx.doi.org/10.1109/tns.2018.2882529.
Texto completoDong, Zhipeng, Huan Zhao, Don DiMarzio, Myung-Geun Han, Lihua Zhang, Jesse Tice, Han Wang y Jing Guo. "Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits". IEEE Transactions on Electron Devices 65, n.º 10 (octubre de 2018): 4160–66. http://dx.doi.org/10.1109/ted.2018.2830328.
Texto completoLiu, Yanming, Kunhe Yang, Xuefeng Wang, He Tian y Tian-Ling Ren. "Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering". IEEE Transactions on Electron Devices 67, n.º 3 (marzo de 2020): 984–88. http://dx.doi.org/10.1109/ted.2020.2968731.
Texto completoIshikawa, Ryusuke, Shuichiro Hirata, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Masaki Kudo y Syo Matsumura. "In-situElectron Microscopy of Cu Movement in MoOx/Al2O3Bilayer CBRAM during Cyclic Switching". ECS Transactions 80, n.º 10 (25 de octubre de 2017): 903–10. http://dx.doi.org/10.1149/08010.0903ecst.
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