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Artículos de revistas sobre el tema "Contact interface"

Autor: Grafiati
Publicado: 1 de junio de 2024
Última modificación: 30 de julio de 2025

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1

VANDAMME, L. K. J. "CHARACTERIZATION OF CONTACT INTERFACE, FILM SHEET RESISTANCE AND 1/f NOISE WITH CIRCULAR CONTACTS." Fluctuation and Noise Letters 10, no. 04 (2011): 467–84. http://dx.doi.org/10.1142/s0219477511000740.

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The resistance and noise of films prepared with poor contacts are dominated by the contact interface and for perfect contacts holds that resistance and noise stem from outside the contact interface region. The proposed test pattern to study the different contributions uses one mask. It permits two- and four-point measurements enabling the detection of a weak contribution from outside the contact interface on top of a strong interface contribution. The resistance and noise for poor and perfect contacts are calculated between pairs of circular top electrodes of equal diameters 2r at distances L
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2

Kim, Youngbeom, Sungho Choi, Kyung-Young Jhang, and Taehyeon Kim. "Experimental Verification of Contact Acoustic Nonlinearity at Rough Contact Interfaces." Materials 14, no. 11 (2021): 2988. http://dx.doi.org/10.3390/ma14112988.

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When a longitudinal wave passes through a contact interface, second harmonic components are generated due to contact acoustic nonlinearity (CAN). The magnitude of the generated second harmonic is related to the contact state of the interface, of which a model has been developed using linear and nonlinear interfacial stiffness. However, this model has not been sufficiently verified experimentally for the case where the interface has a rough surface. The present study verifies this model through experiments using rough interfaces. To do this, four sets of specimens with different interface rough
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3

Nimmala, Seshu, S. Aria Hosseini, Jackson Harter, Todd Palmer, Eric Lenz, and P. Alex Greaney. "Characterizing Macroscopic Thermal Resistance Across Contacting Interfaces Through Local Understanding of Thermal Transport." MRS Advances 3, no. 44 (2018): 2735–41. http://dx.doi.org/10.1557/adv.2018.485.

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ABSTRACTThermal resistance across the interface between touching surfaces is critical for many industrial applications. We developed a network model to predict the macroscopic thermal resistance of mechanically contacting surfaces. Contacting interfaces are fractally rough, with small islands of locally intimate contact separated by regions with a wider gas filled boundary gap. Heat flow across the interface is therefore heterogeneous and thus the contact model is based on a network of thermal resistors representing boundary resistance at local contacts and the access resistance for lateral tr
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4

Shi, Linquan, and Qiang Li. "Numerical simulation and experimental study of contact thermal resistance under high temperature conditions." Thermal Science and Engineering 5, no. 1 (2022): 1. http://dx.doi.org/10.24294/tse.v5i1.1523.

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Contact thermal resistance is an important indicator of the efficiency of heat transfer between contact interfaces.The contact thermal resistance between the interfaces of superalloy GH4169 in high temperature was investigated byusing ANSYS. The real surface morphology of superalloy was obtained with optical microscope, and its surface modelwas reconstructed in ANSYS. Based on the theory of structural mechanics, the elastoplastic deformation of the microstructure of the contact interface is simulated, and analyzed and obtained the contact thermal resistance between contactinterfaces. The effec
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5

Yang, Ai Mei, Gui Zhong Li, Shao Ying Zhen, and Lai Jun Liu. "Electrode Interface Polarization in BaTiO3-Based PTC Ceramics." Key Engineering Materials 697 (July 2016): 248–52. http://dx.doi.org/10.4028/www.scientific.net/kem.697.248.

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Electrodes play a vital role on the electrical properties of positive temperature coefficient (PTC) ceramics. An ohmic contract between ceramics and electrodes is necessary for the PTC effect. In this work, silver mixed aluminium electrode and pure silver electrode were pasted on BaTiO3-based PTC ceramics, which results in an ohmic contact and non-ohmic contact, respectively. Impedance spectroscopy and dielectric and conductivity properties was investigated at different temperature for the two contacts. Small difference of electrical properties was found between the two contacts above the Curi
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6

Banerjee, Sneha, and Peng Zhang. "Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering." Journal of Vacuum Science & Technology A 40, no. 3 (2022): 030802. http://dx.doi.org/10.1116/6.0001724.

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The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. This paper reviews recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatial
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7

Qi, Yue, Min Feng, and Xing Liu. "(Invited) The Electrochemical-Mechanical Coupled Interface Contacts during Lithium Plating and Stripping." ECS Meeting Abstracts MA2024-01, no. 38 (2024): 2288. http://dx.doi.org/10.1149/ma2024-01382288mtgabs.

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The current density during battery operation is often assumed uniform across the entire electrode surface. This may be valid for conformal solid/liquid interfaces; however, solid/solid interfaces generally have imperfect contacts. By introducing the contact area ratio, γ, to the electrochemical model, it can be demonstrated clearly that the effective current density scales linearly with the 1/γ and the overpotential scales exponentially with contact area loss, 1-γ. The calculation of surface contact area must consider the multi-length-scale nature of surface roughness. Assuming surface roughne
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8

Liu, Yuwei, Yameng Ji, Fuhao Ye, Weizheng Zhang та Shujun Zhou. "Effects of contact pressure and interface temperature on thermal contact resistance between 2Cr12NiMoWV/BH137 and γ-TiAl/2Cr12NiMoWV interfaces". Thermal Science 24, № 1 Part A (2020): 313–24. http://dx.doi.org/10.2298/tsci191018470l.

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Thermal contact resistance between interfaces is an important parameter in the analysis of temperature distribution for structural components. Thermal contact resistance between heat resistant steel 2Cr12NiMoWV/aluminum alloy BH137 interfaces and 2Cr12NiMoWV/titanium alloy ?-TiAl interfaces were experimentally investigated in the present paper. The effects of contact pressure and interface tem-perature were detailed. The temperature of contacting surfaces was from 80- 250?, and the contact pressure ranged from 2-17 MPa. All experiments were conducted in ambient atmosphere. Results showed that
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9

Kartal, Mehmet E., Daniel M. Mulvihill, David Nowell, and Dawid A. Hills. "Measurement of Tangential Contact Stiffness in Frictional Contacts: The Effect of Normal Pressure." Applied Mechanics and Materials 70 (August 2011): 321–26. http://dx.doi.org/10.4028/www.scientific.net/amm.70.321.

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The tangential contact stiffness of frictional interfaces affects both the vibration response and structural integrity of structures comprising frictional joints. Vibration and structural response of monolithic structures can be predicted very accurately; however, when assemblies of components involve frictional interfaces, additional damping and compliance are present due to these interfaces. These features make it more challenging to predict the vibration characteristics of assemblies with the same degree of accuracy as can be achieved for single components. If these interface properties can
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10

Nouira, Dorra, Davide Tonazzi, Anissa Meziane, Laurent Baillet, and Francesco Massi. "Numerical and Experimental Analysis of Nonlinear Vibrational Response due to Pressure-Dependent Interface Stiffness." Lubricants 8, no. 7 (2020): 73. http://dx.doi.org/10.3390/lubricants8070073.

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Modelling interface interaction with wave propagation in a medium is a fundamental requirement for several types of application, such as structural diagnostic and quality control. In order to study the influence of a pressure-dependent interface stiffness on the nonlinear response of contact interfaces, two nonlinear contact laws are investigated. The study consists of a complementary numerical and experimental analysis of nonlinear vibrational responses due to the contact interface. The laws investigated here are based on an interface stiffness model, where the stiffness property is described
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11

Huang, Lingqin, Sumin Pan, Xuliang Deng, and Wenwen Cui. "4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study." Journal of Applied Physics 132, no. 24 (2022): 245702. http://dx.doi.org/10.1063/5.0122722.

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Due to the difficulty of forming a low Schottky barrier at the interface of a metal/SiC contact, preparing Ohmic contacts is still a key technical problem in developing SiC devices. In this paper, the effects of MoS2 intercalation on the interface properties of metal/SiC (Al, Ag, Ti, Au, and Mg) systems were investigated by first-principles calculation. The calculations show that all the metal/SiC contacts exhibit p-type Schottky contacts with strong Fermi level pinning (FLP) at the interfaces. After inserting a layer of MoS2, the Schottky barrier heights are significantly reduced. All the met
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12

Liu, Yang, Qi Yuan, Pu Li, and Guangyu Zhu. "Modal Analysis for a Rod-Fastened Rotor considering Contact Effect Based on Double Fractal Model." Shock and Vibration 2019 (May 2, 2019): 1–10. http://dx.doi.org/10.1155/2019/4027353.

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The rod-fastened rotor is the core component of the gas turbine. It comprises several discs and tie rods. The flexural stiffness of the contact interface is the key factor for rotordynamic analysis. The contact interfaces of the discs are usually manufactured by grinding. The measured contour curve of the contact interfaces of an experimental rod-fastened rotor is analyzed by the structural function method, which shows that the contact interfaces can be well described by the double fractal model with fractal dimensions D1 and D2 and the fractal roughness parameters G1 and G2. The Hertz model i
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13

Sundaramoorthy, Vinoth, Stephan Wirths, and Lars Knoll. "Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation." Materials Science Forum 1062 (May 31, 2022): 224–28. http://dx.doi.org/10.4028/p-c277as.

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In this manuscript Ohmic contact formation at low annealing temperatures is demonstrated using shallow implantation technique. Remarkably, Ni Ohmic contacts with a specific contact resistivity of 1.9x10-5 Ωcm2 have been achieved at as-deposited condition. Smooth interfaces along with reduced Schottky barrier at the metal/SiC interface contributed to improved Ohmic performance at as-deposited and 450°C anneal conditions.
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14

Petrov, E. P. "Method for Direct Parametric Analysis of Nonlinear Forced Response of Bladed Disks With Friction Contact Interfaces." Journal of Turbomachinery 126, no. 4 (2004): 654–62. http://dx.doi.org/10.1115/1.1776588.

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An effective method for direct parametric analysis of periodic nonlinear forced response of bladed disks with friction contact interfaces has been developed. The method allows, forced response levels to be calculated directly as a function of contact interface parameters such as the friction coefficient, contact surface stiffness (normal and tangential coefficients), clearances, interferences, and the normal stresses at the contact interfaces. The method is based on exact expressions for sensitivities of the multiharmonic interaction forces with respect to variation of all parameters of the fr
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15

Wang, Hong, Guoqiang Gao, Deng Lei, et al. "Influence of Interface Temperature on the Electric Contact Characteristics of a C-Cu Sliding System." Coatings 12, no. 11 (2022): 1713. http://dx.doi.org/10.3390/coatings12111713.

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Electrical contact resistance (ECR) and discharge are the key parameters of electrical contact performance for carbon-copper (C-Cu) contacts in the pantograph-contact line system. The change in physical and chemical properties of the C-Cu interface caused by interface temperature is the main reason for the variation in ECR and discharge. In this paper, an electric contact test platform based on interface temperature control was established. The influence of interface temperature on ECR and the discharge characteristics under different current amplitudes were studied. There are opposite trends
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16

Holland, Anthony, Yue Pan, Mohammad Alnassar, and Stanley Luong. "Circular test structures for determining the specific contact resistance of ohmic contacts." Facta universitatis - series: Electronics and Energetics 30, no. 3 (2017): 313–26. http://dx.doi.org/10.2298/fuee1703313h.

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Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. Error correction has been a major concern in regard to specific contact resistance test structures and investigations by finite element modeling demonstrate that test structures utilising circular contacts can be more reliable than those designed to have square shaped contacts as test contacts become necessarily smaller. Finite element modeling software NASTRAN can be
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17

Chatterjee, Debanjali, Kaustubh Girish Naik, Bairav Sabarish Vishnugopi, and Partha P. Mukherjee. "Mechanics-Coupled Interface Kinetics in Solid-State Batteries." ECS Meeting Abstracts MA2023-02, no. 4 (2023): 632. http://dx.doi.org/10.1149/ma2023-024632mtgabs.

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Solid-state batteries (SSBs) utilizing lithium metal anode are promising candidates for next-generation energy storage systems, offering high energy density and enhanced safety. However, imperfect electrochemical contact at the lithium-solid electrolyte (SE) interface results in transport limitations and high interfacial resistance, posing a critical bottleneck on rate performance. Solid-solid point contacts at the interface lead to stress hotspots and current-focusing, resulting in localized lithium deposition, filament growth and mechanical fracture of the SE. The application of external pre
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18

Dwyer-Joyce, R. S., B. W. Drinkwater, and A. M. Quinn. "The Use of Ultrasound in the Investigation of Rough Surface Interfaces." Journal of Tribology 123, no. 1 (2000): 8–16. http://dx.doi.org/10.1115/1.1330740.

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The measurement of ultrasonic reflection has been used to study the contact between rough surfaces. An incomplete interface will reflect some proportion of an incident wave; this proportion is known as the reflection coefficient. If the wavelength is large compared with the width of the gaps in the plane of the interface then the reflection mechanism can be modeled by considering the interface as a spring. The proportion of the incident wave reflected (reflection coefficient) is then a function of the stiffness of the interface and the frequency of the ultrasonic wave. The sensitivity of the u
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19

Chen, Jiaqi, Zhaofu Zhang, Yuzheng Guo, and John Robertson. "Metal contacts with Moire interfaces on WSe2 for ambipolar applications." Applied Physics Letters 121, no. 5 (2022): 051602. http://dx.doi.org/10.1063/5.0091504.

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The rational design of metal contacts on transition metal dichalcogenides can significantly improve the performance of 2D devices. We have previously shown that a Moire interface between n-type monolayer MoS2 and metal contacts enhances the stability of physisorptive interface sites, thereby enabling weaker Fermi level pinning and allowing easier variation of the Schottky barrier height at these interfaces. We extend these calculations to p-type and ambipolar WSe2 contacts in this work. The analysis shows that the Moire interfaces again have a weaker Fermi level pinning, while most metals have
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20

Xiao-Kai, HU, ZHANG Shuang-Meng, ZHAO Fu, LIU Yong, and LIU Wei-Shu. "Thermoelectric Device: Contact Interface and Interface Materials." Journal of Inorganic Materials 34, no. 3 (2019): 269. http://dx.doi.org/10.15541/jim20180248.

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21

Cole, M. W., W. Y. Han, D. W. Eckart, L. M. Casas, and K. A. Jones. "Microstructure and contact-resistance temperature dependence of Pt/Ti/Ge/Pd ohmic contacts to GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 866–67. http://dx.doi.org/10.1017/s0424820100172061.

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The development of GaAs device technology has demonstrated the need for fabrication of low resistance thermally stable ohmic contacts. Gold based contacts have been the overwhelming choice for ohmic contacts in device applications. In particular, Au/Ge/Ni and Zn/Au alloyed contacts have been used for n and p-GaAs respectively. Numerous investigations have shown that Au-based contacts to GaAs have avery complex morphology after annealing. Specifically, structural interface inhomogeneities, such as protrusions and newly formed lateral interface phases lead to non-planar metalsemiconductor interf
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22

Asif, Mohammad, Saddam Husain, Sanaur Rehman, Taliv Hussain, and Rafiuddin Mohd. "Experimental studies on selected thermal interface materials." Thermal Science, no. 00 (2023): 284. http://dx.doi.org/10.2298/tsci230911284a.

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The current work is an experimental study, with the primary goal of investigating and exploring ways to improve thermal contact conductance through a detailed examination and analysis of metallic contacts and discovering opportunities for enhancement, increased efficiency, and thus heat dissipation using thermal interface materials. The steady-state experiments have been carried out on a simple and calibrated experimental set-up. A comprehensive investigation was conducted to assess the thermal performance of Copper-Aluminum contacts for the selected range of contact pressures and temperatures
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23

Huang, Gang, Junhong Wu, Haiou Li, and Honggang Liu. "Robust Transition Metal Contacts for Aligned Carbon Nanotubes." Nanomaterials 15, no. 10 (2025): 736. https://doi.org/10.3390/nano15100736.

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Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 kΩ·μm to 1.57 kΩ·μm and at the Ni/A-
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24

Li, Y. D., W. L. Zhen, S. R. Weng, et al. "Interface effects of Schottky devices built from MoS2 and high work function metals." Journal of Physics: Condensed Matter 34, no. 16 (2022): 165001. http://dx.doi.org/10.1088/1361-648x/ac50db.

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Abstract Schottky junctions, formed by high work function metals and semiconductors, are important devices in electronics and optoelectronics. The metal deposition in traditional Schottky interfaces usually damages the semiconductor surface and causes defect states, which reduces the Schottky barrier height and device performance. This can be avoided in the atomically smooth interface formed by two-dimensional (2D) metals and semiconductors. For better interface tailoring engineering, it is particularly important to understand various interface effects in such 2D Schottky devices under critica
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25

Benes, J., E. Vesely, H. Šebková, D. Gabriel, and F. Mu. "Contact impact interface modelling." Mathematical and Computer Modelling 28, no. 4-8 (1998): 135–52. http://dx.doi.org/10.1016/s0895-7177(98)00114-9.

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26

Wang, Zong Ren, Wei Fang Zhang, and Ming Yuan Yang. "Experimental Study of Thermal Contact Conductance with Compensation Heater." Advanced Materials Research 337 (September 2011): 774–78. http://dx.doi.org/10.4028/www.scientific.net/amr.337.774.

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This article describes an experimental setup to measure the TCC between interfaces of two contact solid materials. A new kind of design scheme of the compensation heater is put forward. An experimental investigation of thermal contact conductance is conducted with pressed pairs of GH4169 and K417 contacts in the range 130~280°C. The results show that TCC over this condition increases with temperature, but it is not monotonic. Moreover, the thermal contact conductance measured by experiment with compensation heater at the interface is higher than that without compensation heater.
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27

Dwyer-Joyce, R. S. "The Application of Ultrasonic NDT Techniques in Tribology." Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology 219, no. 5 (2005): 347–66. http://dx.doi.org/10.1243/135065005x9763.

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The use of ultrasonic reflection is emerging as a technique for studying tribological contacts. Ultrasonic waves can be transmitted non-destructively through machine components and their behaviour at an interface describes the characteristics of that contact. This paper is a review of the current state of understanding of the mechanisms of ultrasonic reflection at interfaces, and how this has been used to investigate the processes of dry rough surface contact and lubricated contact. The review extends to cover how ultrasound has been used to study the tribological function of certain engineeri
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28

Biwa, Shiro, Yukiko Inoue, and Nobutada Ohno. "OS02W0060 Influence of contact pressure on guided wave propagation at contact interface." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS02W0060. http://dx.doi.org/10.1299/jsmeatem.2003.2._os02w0060.

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29

Turak, Ayse. "On the Role of LiF in Organic Optoelectronics." Electronic Materials 2, no. 2 (2021): 198–221. http://dx.doi.org/10.3390/electronicmat2020016.

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Organic optoelectronic device behaviour is heavily dependent on interfacial effects due to the device architecture and thickness. Interfaces between the inorganic electrodes and the active organic layers play a defining role in the all of the electronic and stability processes that occur in organic light emitting diodes (OLEDs) and organic solar cells (OPVs). Amongst the many interlayers introduced at these interfaces to improve charge carrier movement and stability, LiF has proven to be the most successful and it is almost ubiquitous in all organic semiconductor devices. Implemented at both t
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30

Armand, J., L. Pesaresi, L. Salles, C. Wong, and C. W. Schwingshackl. "A modelling approach for the nonlinear dynamics of assembled structures undergoing fretting wear." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 475, no. 2223 (2019): 20180731. http://dx.doi.org/10.1098/rspa.2018.0731.

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Assembled structures tend to exhibit nonlinear dynamic behaviour at high excitation levels due to the presence of contact interfaces. The possibility of building predictive models relies on the ability of the modelling strategy to capture the complex nonlinear phenomena occurring at the interface. One of these phenomena, normally neglected, is the fretting wear occurring at the frictional interface. In this paper, a computationally efficient modelling approach which enables considerations of the effect of fretting wear on the nonlinear dynamics is presented. A multi-scale strategy is proposed,
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31

Yegnasubramanian, S., V. C. Kannan, R. Dutto, and P. J. Sakach. "Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 450–51. http://dx.doi.org/10.1017/s0424820100154226.

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Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nic
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32

Huang, Wei, Shao Hui Chang, Xue Chao Liu, et al. "Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts." Materials Science Forum 740-742 (January 2013): 485–89. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.485.

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The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing (>950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the form
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33

Li, Zhan Hui, Yun Xin Wu, and Zhi Li Long. "Higher Order Harmonic Wave and its Effect on Thermosonic Bond System." Advanced Materials Research 97-101 (March 2010): 2644–49. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.2644.

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Thermosonic bond is widely used in package of semiconductor chip due to its advantages, such as simple process, high efficiency, and no pollution. Ultrasonic play important role inspired interconnection interface atomic energy and soften metallic materials in thermosonic bond. The vibration of bond tool is nonlinear and bond strength is unstable with contact interface condition changing due to discontinuity characteristic parameters of contact interfaces. In order to improve bond strength of chip, model of ultrasonic propagation across a rough contact interface was established. Aluminium wire
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34

Fang, Xingxing, Dahan Li, Yucheng Xin, et al. "Dynamic contact stress and frictional heat analysis of femoral head-on-acetabular cup interface based on calculation and simulation methods." Industrial Lubrication and Tribology 73, no. 10 (2021): 1302–9. http://dx.doi.org/10.1108/ilt-07-2021-0261.

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Purpose The purpose of this paper is to systematically study the dynamic contact stress, frictional heat and temperature field of femoral head-on-acetabular cup contact pairs in a gait cycle. Design/methodology/approach In this paper, four common femoral head-on-acetabular cup contact pairs are used as the research objects, mathematical calculations and finite element simulations are adopted. The contact model of hip joint head and acetabular cup was established by finite element simulation to analyze the stress and temperature distribution of the contact interface. Findings The results show t
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35

Shi, Xi, and Andreas A. Polycarpou. "Measurement and Modeling of Normal Contact Stiffness and Contact Damping at the Meso Scale." Journal of Vibration and Acoustics 127, no. 1 (2005): 52–60. http://dx.doi.org/10.1115/1.1857920.

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Modeling of contact interfaces that inherently include roughness such as joints, clamping devices, and robotic contacts, is very important in many engineering applications. Accurate modeling of such devices requires knowledge of contact parameters such as contact stiffness and contact damping, which are not readily available. In this paper, an experimental method based on contact resonance is developed to extract the contact parameters of realistic rough surfaces under lightly loaded conditions. Both Hertzian spherical contacts and flat rough surfaces in contact under normal loads of up to 100
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36

Mucheroni, Marcos Luiz. "Interface Tesseracto UI and the Hologram." International Journal of Creative Interfaces and Computer Graphics 10, no. 1 (2019): 56–64. http://dx.doi.org/10.4018/ijcicg.2019010105.

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Building Tesseracto UI-type holographic interfaces is one step significant interaction in interfaces of computational devices with interaction in 3D. This follows the idea that the best user interface is no interface device, in the space of the hypercube and the fourth dimension. The contact device detects haptic interfaces, at the same time the touch in a free space as contact is made from fine ultrasonic sensors corresponding to the hologram images. The prototype was developed using the vertical and horizontal ultrasonic devices and a display hologram. The device is still in the testing phas
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37

Jurkowska, Renata Z., Arumugam Rajavelu, Nils Anspach, et al. "Oligomerization and Binding of the Dnmt3a DNA Methyltransferase to Parallel DNA Molecules." Journal of Biological Chemistry 286, no. 27 (2011): 24200–24207. http://dx.doi.org/10.1074/jbc.m111.254987.

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Structural studies showed that Dnmt3a has two interfaces for protein-protein interaction in the heterotetrameric Dnmt3a/3L C-terminal domain complex: the RD interface (mediating the Dnmt3a-3a contact) and the FF interface (mediating the Dnmt3a-3L contact). Here, we demonstrate that Dnmt3a-C forms dimers via the FF interface as well, which further oligomerize via their RD interfaces. Each RD interface of the Dnmt3a-C oligomer creates an independent DNA binding site, which allows for binding of separate DNA molecules oriented in parallel. Because Dnmt3L does not have an RD interface, it prevents
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38

Franklin, Aaron D. "(Invited) Influence of Materials and Processing on Edge Contacts to 2D Semiconductors." ECS Meeting Abstracts MA2022-01, no. 12 (2022): 871. http://dx.doi.org/10.1149/ma2022-0112871mtgabs.

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The most common approach for establishing electrical contacts to 2D semiconductors, such as MoS2, is by fabricating metal contacts on top of the inert crystal surface. From an electron transport perspective, these top-contact interfaces can be awkward, with a van der Waals gap or some difficult-to-control form of interfacial bonding. Pure edge contacts (where the interface between the metal and 2D semiconductor occurs completely along the open bonds of the 2D crystal edge) provide a more natural bonding structure and potentially better carrier transport behavior; however, edge contacts have pr
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39

Sundaramoorthy, Vinoth Kumar, Lukas Kranz, and Giovanni Alfieri. "Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers." Materials Science Forum 963 (July 2019): 494–97. http://dx.doi.org/10.4028/www.scientific.net/msf.963.494.

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The micro-structural analysis of Ti/Ni bilayer as Ohmic contacts to n-type 4H-SiC is reported. There was no carbon segregation at the interface between the NiSi layer and the 4H-SiC layer for Ti/Ni contacts, unlike pure Ni contacts. The diffraction pattern image shows the presence of the cubic NiSi film which grows on the SiC surface. The film interface with the SiC was uniform and more planar. An optimized contact in terms of contact morphology was achieved using a bilayer contact Ti/Ni (20/100nm) annealed at 1100 °C for 5 minutes in vacuum.
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40

TAMAI, T. "Friction and Contact Resistance through True Contact Interface." IEICE Transactions on Electronics E89-C, no. 8 (2006): 1122–28. http://dx.doi.org/10.1093/ietele/e89-c.8.1122.

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41

Xie, Hong, Zhiping Zeng, Miao Su, Jun Luo, and Gonglian Dai. "On Mechanical and Motion Behavior of the Normal Impact Interface between a Rigid Sphere and Elastic Half-Space." Applied Sciences 12, no. 21 (2022): 11094. http://dx.doi.org/10.3390/app122111094.

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This paper presents exact solutions for the mechanical behavior of the interface during the normal collision between a rigid sphere and an elastic half-space based on kinematics and particle dynamics theory. The interfacial contact stress is significantly different from the static solution obtained from the Hertz contact theory. Firstly, according to the kinematics theory, the elastic half-space interface deformation of the sphere and the half-space interface in the collision process is divided into the deformation of the contact area and the non-contact area. The curve of the non-contract are
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42

Patel, Ruchita, Zulfiqar Ahmad Khan, Vasilios Bakolas, and Adil Saeed. "Numerical Simulation of the Lubricant-Solid Interface Using the Multigrid Method." Lubricants 11, no. 6 (2023): 233. http://dx.doi.org/10.3390/lubricants11060233.

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Solid asperity interactions are common and inevitable under severe loading conditions for any lubricated contact. Heavy-duty machine components (gears, bearings, etc.) generally operate under Mixed Lubrication (ML), where uneven surface features contact each other when the generated fluid pressure is not enough to support the external load. The Reynolds equation is commonly used to simulate smooth lubricated contacts numerically. In rough lubricated interfaces where opposite surface asperities make contact, the Reynolds equation alone cannot accurately predict pressure using the traditional nu
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43

Omelyanchouk, A. N., B. I. Verkin, R. deBruyn Ouboter, and C. J. Muller. "Influence of interface roughness and pointlike defects on the Josephson current in superconducting break junctions." Low Temperature Physics 20, no. 5 (1994): 398–401. https://doi.org/10.1063/10.0033649.

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The stationary Josephson effect has been studied for the point contact between two clean superconductors with strong electron scattering in the interface. We calculate the effect of nonideal contact interfaces on the Josephson characteristics (current-phase relation I(φ) and critical current Ic) in the case of a rough diffusive interface and in the case of scattering on single defects localized in the constriction.
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44

Mallem, Siva Pratap Reddy, Woo-Hyun Ahn, Jung-Hee Lee, and Ki-Sik Im. "Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN." Crystals 10, no. 12 (2020): 1091. http://dx.doi.org/10.3390/cryst10121091.

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In this study, a PdAl (20 nm)/Au (30 nm) metal stack scheme is used for forming low-ohmic-resistance contact on Mg-doped (1.5 × 1017 cm−3) p-type AlGaN at various annealing temperatures. Using a circular-transmission line model, the specific contact resistance (ρc) of PdAl/Au/p-AlGaN ohmic contact is determined via the current–voltage (I–V) characteristics. As-deposited contacts demonstrate non-linear behavior. However, the contact exhibits linear I–V characteristics with excellent ohmic contact of ρc = 1.74 × 10−4Ωcm2, when annealed at 600 °C for 1 min in a N2 atmosphere. The Ga and Al vacanc
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45

Hertel, Stefan, Andreas Finkler, Michael Krieger, and Heiko B. Weber. "Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)." Materials Science Forum 821-823 (June 2015): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.933.

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Epitaxial graphene on silicon carbide (SiC) can easily be grown by thermal decomposition. A well-defined epitaxial interface between graphene and substrate is formed, especially when the silicon face of hexagonal polytypes is employed. It is found that as-grown monolayer graphene with interfacial buffer layer provides perfectly ohmic contacts to n-type SiC – even to low-doped epitaxial layers without contact implantation. Contact resistances to highly doped samples are competitive with conventional annealed nickel (Ni) contacts; a direct comparison of Ni and graphene contacts on 4H-SiC resulte
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46

Montero, Jorge A., and Ghadir Haikal. "Modeling Beam–Solid Finite Element Interfaces: A Stabilized Formulation for Contact and Coupled Systems." International Journal of Applied Mechanics 10, no. 09 (2018): 1850094. http://dx.doi.org/10.1142/s1758825118500941.

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A number of engineering applications involve contact with bodies modeled using specialized theories of solid mechanics like beams or shells. While computational models for contact in 2D and 3D solid mechanics have been extensively developed in the literature, problems involving contact with beams or shells have received less attention. When modeling contact between a solid body represented with beam or shell theory and a domain discretized with solid finite elements, the contact model faces the typical challenges of enforcing geometric compatibility and the transfer of a complete pressure fiel
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47

Savtchouk, Alexander, Marshall Wilson, and Jacek Lagowski. "Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States." Materials Science Forum 897 (May 2017): 139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.897.139.

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In this work we present novel photo-assisted characterization of dielectric interfaces in SiC using a modified non-contact corona-Kelvin technique. This technique eliminates the cost and time associated with fabrication of electrical test structures. UV illumination in deep depletion is used to generate minority carriers that empty deep interface states too slow to be emptied by thermal emission. After illumination, the interface state charging current is measured with time resolved voltage decay. This enables novel non-contact corona-Kelvin characterization of hole emission and electron captu
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48

Chern, Shin-Yuh, Yang-Yuan Chen, Wei-Lun Liu, and Jeng-Haur Horng. "Contact Characteristics at Interface in Three-Body Contact Conditions with Rough Surfaces and Foreign Particles." Lubricants 10, no. 7 (2022): 164. http://dx.doi.org/10.3390/lubricants10070164.

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Nanoparticles as lubricant additives under a certain average diameter and concentration may reduce wear, friction and scuffing damage. However, atmospheric dust particles affect not only human health but also the efficiency of components, and even cause component failures. Therefore, the contact characteristics at interfaces with foreign particles require careful investigation. In this work, a 3-body microcontact mechanics concept is used to analyze the effects of wear debris and foreign particles on real contact area, contact mode, asperity deformation type and separation at interface. The re
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49

McDonnell, Stephen, Christopher Smyth, Christopher L. Hinkle, and Robert M. Wallace. "MoS2–Titanium Contact Interface Reactions." ACS Applied Materials & Interfaces 8, no. 12 (2016): 8289–94. http://dx.doi.org/10.1021/acsami.6b00275.

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50

Shvarts, A. G., and V. A. Yastrebov. "Trapped fluid in contact interface." Journal of the Mechanics and Physics of Solids 119 (October 2018): 140–62. http://dx.doi.org/10.1016/j.jmps.2018.06.016.

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