Libros sobre el tema "Crystals Apatite. Silicon crystals"

F, Kiselev V. y Mukashev B. N, eds. Defekty v kremnii i na ego poverkhnosti. Moskva: "Nauka," Glav. red. fiziko-matematicheskoĭ lit-ry, 1990.

Alliance, Northwest Energy Efficiency. Silicon crystal growing facilities, No. 1. [Portland OR]: The Alliance, 1999.

Pohoryles, Bronisław. Pochodzenie stanów elektronowych dyslokacji w germanie i krzemie. Wrocław: Zakład Narodowy im. Ossolińskich, 1987.

Japan) Foton Fakutorī Kenkyūkai (2012 May 26-27 Tsukuba-shi. Shirikon tankesshō: Risō hinshitsu e no akunaki tsuikyū : handōtai sangyō no kome to hōshakō X-sen kōgaku soshi to shite : PF Kenkyūkai = Silicon single crystal : insatiable prusuit towards ideal quality as crop in semiconductor industry and x-ray optical element in synchrotron science. Tsukuba-shi, Ibaraki-ken: High Energy Accelerator Research Organization, 2012.

Khokhlov, A. F. Allotropii︠a︡ kremnii︠a︡: Monografii︠a︡. Nizhniĭ Novgorod: Izd-vo Nizhegorodskogo gos. im. N.I. Lobachevskogo, 2002.

Dziuban, J. A. Technologia i zastosowanie mikromechanicznych struktur krzemowych i krzemowo-szklanych w technice mikrosystemenów. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2002.

Goncharov, E. G. Poluprovodnikovye fosfidy i arsenidy kremnii͡a︡ i germanii͡a︡. Voronezh: Izd-vo Voronezhskogo universiteta, 1989.

International Symposium on High Purity Silicon (9th 2006 Cancún, Mexico). High purity silicon 9. Editado por Claeys Cor L, Electrochemical Society. Electronics and Photonics Division. y Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2006.

International, Symposium on High Purity Silicon (9th 2006 Cancún Mexico). High purity silicon 9. Pennington, NJ: Electrochemical Society, 2006.

L, Claeys Cor, Electrochemical Society Electronics Division, Society of Photo-optical Instrumentation Engineers. y Electrochemical Society Meeting, eds. High purity silicon VII. Pennington, NJ: Electrochemical Society, 2002.

Semiconductor silicon crystal technology. San Diego: Academic Press, 1989.

Russia) Vserossiĭskiĭ simpozium "Amorfnye i mikrokristallicheskie poluprovodniki" (1998 (Saint-Petersburg. Amorfnye i mikrokristallicheskie poluprovodniki: Tezisy dokladov Vserossiĭskogo simpoziuma s uchastiem uchenykh iz stran SNG Sankt-Peterburg, 5-9 ii︠u︡li︠a︡ 1998 g. Sankt-Peterburg: Possiĭskai︠a︡ Akademii︠a︡ nauk, Fiziko-tekhnicheskiĭ in-t im. A.F. Ioffe RAN, 1998.

Lefeld-Sosnowska, Maria. Zjawiska interferencji rentgenowskich pól falowych w doskonałych i zdeformowanych monokryształach krzemu. Warszawa: Wydawnictwa Uniwersytetu Warszawskiego, 1987.

Symposium A on Defect in Silicon, Hydrogen of the E-MRS Spring Conference (1998 Strasbourg, France). Defects in silicon, hydrogen: Proceedings of Symposium A on Defects in Silicon, Hydrogen of the E-MRS Spring Conference, Strasbourg, France, 16-19 June, 1998. Amsterdam: Elsevier, 1999.

NATO Advanced Study Institute on Novel Silicon Based Technologies (1989 Boca Raton, Fla.). Novel silicon based technologies. Dordrecht: Kluwer Academic, 1991.

T, Igamberdyev Kh. Teplofizika kremnii͡a︡. Tashkent: Izd-vo "Fan" Uzbekskoĭ SSR, 1990.

Pavesi, Lorenzo y Rasit Turan. Silicon nanocrystals: Fundamentals, synthesis and applications. Weinheim: Wiley-VCH, 2010.

International Symposium on High Purity Silicon (8th 2004 Honolulu, Hawaii). High purity silicon VIII: Proceedings of the international symposium. Editado por Claeys Cor L, Electrochemical Society Electronics Division y Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2004.

L, Claeys Cor, Electrochemical Society Electronics Division, Electrochemical Society Meeting y Society of Photo-optical Instrumentation Engineers., eds. High purity silicon VI: Proceedings of the Sixth International Symposium. Pennington, New Jersey: Electrochemical Society, 2000.

International Symposium on High Purity Silicon (4th 1996 San Antonio, Tex.). Proceedings of the Fourth International Symposium on High Purity Silicon. Editado por Claeys Cor L y Electrochemical Society Electronics Division. Pennington, NJ: Electrochemical Society, 1996.

Klugmann-Radziemska, Ewa. Efekty termiczne konwersji energii w krzemowych ogniwach fotowoltaicznych. Gdańsk: Wydawn. Politechniki Gdańskiej, 2005.

Evertson, Scott Richard. Experimental considerations of higher order parametric x-rays from silicon crystals of varying thicknesses. Monterey, Calif: Naval Postgraduate School, 1992.

Baraban, A. P. Ėlektronika sloev SiO₂ na kremnii. Leningrad: Izd-vo Leningradskogo universiteta, 1988.

Dylla, Thorsten. Electron spin resonance and transient photocurrent measurements on microcrystalline silicon. Jülich: Forschungszentrum, Zentralbibliothek, 2005.

L, Claeys Cor y Electrochemical Society Electronics Division, eds. Proceedings of the Fifth International Symposium on High Purity Silicon. Pennington, NJ: Electrochemical Society, 1998.

W, Koch S., ed. Semiconductor quantum dots. Singapore: World Scientific, 1993.

Dammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.

International Symposium on Silicon Molecular Beam Epitaxy (3rd 1989 Strasbourg, France). Silicon molecular beam epitaxy: Proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989. Amsterdam: North-Holland, 1989.

International, Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (9th 2001 S. Tecla Italy). Proceedings of the 9th International Autumn Meeting Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001. Uetikon-Zürich, Switzerland: Sci-Tech Pub. Ltd., 2002.

1940-, Richter H. y Kittler M, eds. Proceedings of the 10th International Autumn Meeting Gettering and defect engineering in semiconductor technology: GADEST 2003, Seehotel Zeuthen (suburb of Berlin), State of Brandenburg, Germany, September 21-26, 2003. Uetikon-Zürich, Switzerland: SciTech Publications Ltd., 2004.

International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (12th 2007 Erice, Italy). Gettering and defect engineerig in semiconductor technology XII: Gadest 2007 : proceedings of the 12th International Autumn Meeting, EMFCSC, Erice, Italy, October 14-19, 2007. Stafa-Zurich, Switzerland: Trans Tech Publications, 2008.

Mazer, Jeffrey A. Solar cells: An introduction to crystalline photovoltaic technology. Boston: Kluwer Academic Publishers, 1996.

McCarthy, John M. Crystalline defects in silicon solar cells. 1986.

Crystals in glass. Wiley, 2013.

Silicon Chemical Etching. Springer, 2012.

Hull, Robert. Properties of Crysalline Silicon. Institution of Engineering and Technology, 1999.

I, Stenin S., Aseev A. L y Institut fiziki poluprovodnikov (Akademii͡a︡ nauk SSSR), eds. Skoplenii͡a︡ mezhdouzelʹnykh atomov v kremnii i germanii. Novosibirsk: "Nauka," Sibirskoe otd-nie, 1991.

S, Falʹkevich Ė, ed. Tekhnologii͡a︡ poluprovodnikovogo kremnii͡a︡. Moskva: Metallurgii͡a︡, 1992.

Wijaranakula, Witawat. Heat treatment characteristics of heavily doped epitaxial silicon materials. 1986.

C, O'Mara William, Herring Robert B y Hunt Lee P, eds. Handbook of semiconductor silicon technology. Park Ridge, N.J: Noyes Publications, 1990.

Silicon-based millimeter-wave devices. Berlin: Springer-Verlag, 1994.

Danilo, Crippa, Rode Daniel L y Masi Maurizio, eds. Silicon epitaxy. San Diego: Academic Press, 2001.

Leonard, Stephen Wesley. Novel optical properties of two-dimensional Silicon photonic crystals. 2001.

L, Aseev A., ed. Clusters of interstitial atoms in silicon and germanium. Berlin: Akademie Verlag, 1994.

Velichko, Oleg. Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals. World Scientific Publishing UK Limited, 2019.

Harbeke, G. C. Semiconductor Silicon: Materials Science and Technology : Proceedings of Summer School, Erice, Trapani, Sicily, July 3-15, 1988 (Springer Series in). Springer, 1990.

Günther, Harbeke, Schulz M, European Physical Society y International School of Materials Science and Technology (1988 : Erice, Italy), eds. Semiconductor silicon: Materials science and technology : proceedings of the summer school, Erice, Trapani, Sicily, July 3-15, 1988. Berlin: Springer-Verlag, 1989.

Wagner, Sigurd, Isamu Shimizu, Howard M. Branz, Ruud Schropp y Michael Hack. Amorphous and Microcrystalline Silicon Technology - 1998. University of Cambridge ESOL Examinations, 2014.

Tan, Hong Wee. Ultrafast tuning and probing of two-dimensional silicon photonic crystals. 2006.

Jackson, Kenneth. Silicon Devices: Structures and Processing. Wiley-VCH Verlag GmbH, 1998.