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Tesis sobre el tema "Etcw.r"

Autor: Grafiati

Publicado: 26 de julio de 2024

Última modificación: 31 de julio de 2025

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1

Dickenson, Andrew C. "Measurement and simulation of ion energy distributions in a reactive ion etcher." Thesis, University of Bristol, 1994. http://hdl.handle.net/1983/2e692fca-5cd1-48da-bb7e-6bb76a1bb23b.

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2

Gower, Aaron E. (Aaron Elwood). "An architecture for flexible distributed experimentation and control with an AME 5000 plasma etcher." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10647.

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3

Schmid, Elizabeth Carroll. "Mary Nimmo Moran, Mary Cassatt and the painter-etcher movement: gender, identity and paths to professionalism." Thesis, University of Iowa, 2014. https://ir.uiowa.edu/etd/1394.

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4

Ropero, Pérez Germán. "Design of a Polygeneration system in Filipinas ETCR, Colombia." Thesis, KTH, Skolan för industriell teknik och management (ITM), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-300082.

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This project has addressed the design of a cost-effective Polygeneration system that guarantees a continuous, equitable and environmentally friendly energy supply for the rural settlement of Filipinas ETCR, (in Spanish, Espacios Territoriales de Capacitación y Reincorporación) Colombia, which is currently not achieved, due to a system that relies on the national electricity grid (with numerous outages) and on LPG (Liquefied Petroleum Gas) and wood to meet the thermal demand, mainly for cooking. For this purpose, in addition to the current energy supply situation, the energy demand according to

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5

Teale, Carson(Carson Arthur). "In-situ depth monitoring for a deep reactive ion etcher using a white light interferometer with active vibration cancellation." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/121726.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 119-121).<br>Standard process development for micro and nanofabrication etching technologies relies on open-loop trial and error testing of recipes to achieve optimal etch depths and uniformities. This strategy is inefficient for research and fabrication of novel devices where one-of-a-kind experiments cannot justify lengthy process development times. This thesis describes the development of

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6

鈴木, 彰一. "ITSを用いた大型貨物車交通マネジメントに関する研究". 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215190.

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7

Ruiz, Crespo Nestor. "Polygeneration system model in rural areas of Colombia : Filipinas ETCR as a case of study." Thesis, KTH, Skolan för industriell teknik och management (ITM), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-300081.

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This project has addressed the design of a cost-effective Polygeneration system that guarantees a continuous, equitable and environmentally friendly energy supply for the rural settlement of Filipinas ETCR, (in Spanish, Espacios Territoriales de Capacitación y Reincorporación) Colombia, which is currently not achieved, due to a system that relies on the national electricity grid (with numerous outages) and on LPG (Liquefied Petroleum Gas) and wood to meet the thermal demand, mainly for cooking. For this purpose, in addition to the current energy supply situation, the energy demand according to

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8

平井, 章一. "都市間高速道路における休憩行動分析と休憩行動モデルのネットワークシミュレーションへの実装に関する研究". Kyoto University, 2018. http://hdl.handle.net/2433/232009.

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9

Yang, SHIH-FENG, and 楊世豐. "TFT LCD Dry etcher process chemical type Side etch study." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/19184604902928332763.

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碩士<br>國立交通大學<br>平面顯示技術碩士學位學程<br>102<br>During TFT-LCD array process, etching plays a crucial role of creating designed circuits and patterns. By applying chemical or physical process etching can remove certain parts of the deposit film which are not protected by the photo resist. Therefore it can transfer specific patterns from the photo mask to the deposit film (usually thousands of Å) on the glass. The transferred circuit and patterns are important components in the TFT-LCD manufacturing process. Currently there are two types of etching techniques in TFT LCD etching process, Wet and Dry Etch

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10

Lei, Shuen-Chen, and 雷舜誠. "Study of Plasma Etching on 300mm Inductively Coupled Plasma Etcher." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/04405263728158955844.

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碩士<br>國立清華大學<br>工程與系統科學系<br>89<br>In this thesis ,we use Central Composite Design and Orthogonal Array to arrange the experiments.The parameters of etching rate include ICP power、Bias power、flow rate and pressure. Besides,we use spectrometer and RF impedance meter to measure plasma intensity and RF voltage.Before etching process,we have a standard warm-up process to confirm the ICP etcher is correct and stable.We found etch rate increases when ICP power and Bias power increase. When Flow rate increase,etch rate increases slightly.Intensity of Cl atom spectrum and RF voltage increase,etch rate

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11

Chia-Liang, Yen, and 顏嘉良. "Run-to-Run Etching Depth Control for TCP Poly-Silicon etcher." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/79940287835934689561.

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碩士<br>國立交通大學<br>機械工程系所<br>97<br>The development of Integrated Circuits (IC) is moving toward higher and higher density. In echoing this trend, the size of all kinds of elements and associated line widths have to be narrowed accordingly. Therefore, how to transfer the pattern onto wafers accurately has been an important issue. This thesis purposed using the run-to-run control method to improve the accuracy of etching depth for the TCP poly silicon etcher. 　Two control methods have been studied for the control of TCP etchers; one is EWMA (Exponential Weighted Moving Average), the other one is LS

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12

Hsu, Shih-Chi, and 許時齊. "Study of SF6 Decomposition Products of DPS Poly Etcher in IC's Manufacturing." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/34263389053401601187.

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碩士<br>國立交通大學<br>電機資訊學院碩士在職專班<br>92<br>In this thesis, there are two topics of SF6 decomposition products of DPS poly etcher in IC’s manufacturing to be studied. One is the study of metal corrosion in an environment contaminated with SF6 decomposition products. The other is the study of contamination of SF6 plasma decomposition in DPS poly dry etcher. The first topic is about the corrosion metal. It was found interesting that the metal corrosion have strong correlation with environment contaminated with SF6 decomposition products. In IC’s manufacturing, the corrosion metal appeared sometime an

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13

Chen, Ku-I., and 陳谷伊. "Study of Buried Contact Solar Cell by Using Inductive Couple Plasma Etcher." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/76018236801461203900.

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14

Yu-Zhen, Tsai, and 蔡育錚. "Fabrication and Characterization of Patterned Sapphire Substrates Using a High-Density-Plasma Etcher." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/03491308954174240666.

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碩士<br>國立中興大學<br>精密工程學系所<br>94<br>Group III nitride semiconductors have recently attracted much attentions for their versatile applications as high-brightness light emitting diodes (LEDs) which can be used in full-color displays, full-color indicators and light sources for lamps. Conventional GaN-based LEDs are grown on top of sapphire substrates with a low temperature GaN nuclear layer. The GaN nuclear layer could significantly improve the crystal quality of the subsequent GaN epitaxial layer, threading dislocation density in the order of 109–1012 cm-2 will still remain in the sample due to th

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15

HUNG, HUNG. "Fault Detection and Classification by Sample Covariance Matrix and Its Applications to Plasma Etcher." 2004. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1307200415101100.

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16

Liu, Chih-Yu, and 劉智友. "Improvement and application of the wet etcher for used in field emission display process." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/22886801760931663147.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>97<br>Field emission display not only possess image quality of CRT （cathode ray tube）, and also has merits of power consumption and compact size. To combine the high current density, low emission field and high stability of carbon nanotube, Field emission display was becoming a novel type large size display because of low driving voltage, high luminance efficiency, wide viewing angle and low power consumption. Using thick film photolithography process to fabricate carbon nanotube display cathode involves the following steps: Firstly, Carbon nanotube uniformly was mi

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17

Ku, Kwen-wen, and 古坤文. "Controlling Pollutant Dispersion during Preventative Maintenance of a Metal Etcher in a Semiconductor Factory." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/23814194258860706269.

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碩士<br>國立交通大學<br>工學院碩士在職專班產業安全與防災學程<br>92<br>The main gases in metal etching are hydrogen trichloride and boron chloride in semiconductor manufacturing processes. The process gases are ionized to form free radicals by plasma, which etch off aluminum film of the wafer surface. To increase product yield, the by-product deposited on the reactor chamber must be cleaned during preventive maintenance. When we open and clean the chamber, odor as well as toxic gases(e.g., hydrogen chloride, cyanogen chloride, hydrogen cyanide, etc.) are released. These toxic gases are diffused into the clean room and p

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18

HUNG, HUNG, and 洪弘. "Fault Detection and Classification by Sample Covariance Matrix and Its Applications to Plasma Etcher." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/29727777144399325106.

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碩士<br>國立臺灣大學<br>工業工程學研究所<br>92<br>The variabilities and complex relationships of semiconductor equipment variables can be characterized by the sample covariance matrix. Fault detection and classification (FDC) via sample covariance matrix is thus very important. However, the modern high-mix low-volume semiconductor manufacturing environment has made the sample size an issue diminishing the applicability of existing methods, such as the well-known likelihood-ratio test (LRT). This thesis proposes some testing methods independent of the sample size to detect faults causing changes in the covaria

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19

Zhou, Jun-Tin, and 周俊廷. "The Application of Neural Fuzzy Network in Temperature Control of Heater Block of ICP Etcher." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/03958479419702582091.

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碩士<br>中原大學<br>電機工程研究所<br>99<br>In the semiconductor manufacturing process of etching, temperature control is a very important factor. The stability of the etching rate and quality of uniformity are related to accuracy of temperature control. In situation that there are some defects of deigning machine, process of gas changes in vacuum chamber is one of reasons that cause the temperature becomes unstable. To improve the problem on the premise that changes the structure of machine lowest is the purpose of this search, and therefore we develop a smart temperature controller for raising the st

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20

Lin, Min-Ta, and 林明達. "Fabrication of A-Si Thin Film Transistor through an Enhanced Capacitive-Coupled High-Density Plasma Etcher." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/8a7uyj.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>99<br>This thesis is used plasma etching technology for TFT LCD etching process, using the ECCP system to investigate the structure of a-Si. The main parameters used in these experiments were RF source power, RF bias power, SF6, He gas flow rates, chamber pressure. The study included the etching rate, uniformity, the product reaction and taper angle. Taguchi experimental design method to analyze the parameters, and finally proposes the optimal solution for the chamber pressure: 20mTorr, RF Source power: 9kW, RF Bias power: 12kW, Cl2 gas flow: 3600sccm, SF6 gas flo

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21

Chen, Chia-Liang, and 陳家樑. "Batch type plasma dry etcher for deep trench process simulation model set up & process optimization." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/87821563075865695356.

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碩士<br>國立交通大學<br>工學院碩士在職專班半導體材料與製程設備組<br>97<br>Recently, the development of micro etching process for silicon subtract in marketing is growing very fast, the requirements of processing precision and process resolution have been continuously requested, but in the field of power diode, the most concern is on the higher throughput and lower manufacturing cost technology. The plasma etching is the kind of dry etching technology that is difference with the traditional wet etching technology. The most of the power diode manufacturers still use the wet etching process, due to there are some of the tec

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22

Peng, Zhong-ying, and 彭宗盈. "Study on fabrication of Si-based nano-structures by Focused Ion Beam and ICP/RIE etcher." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/h82t7a.

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碩士<br>國立中山大學<br>機械與機電工程學系研究所<br>97<br>This study is focused on the technique for fabrication of high aspect ratio nanostructures by combining both the advantages of maskless patterning of focused ion beam (FIB) and anisotropic etching of inductively coupled plasma etcher (ICP) in CF4 atmosphere. The materials contain p-type (100) single crystal silicon and thermal silicon dioxide. The study details include： (1) The reliability of AFM when scanning isotropic and anisotropic nanostructures with high aspect ratio tip in tapping mode. (2) FIB direct writing test. (3) The influences of ICP paramete

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23

Chien, Chih-Liang, and 簡誌良. "Research on the Control of Air Pollutant Dispersion during Preventive Maintenance of a Metal Etcher in a Semiconductor Factory." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/18488781910212018104.

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碩士<br>國立交通大學<br>環境工程系所<br>94<br>Main process gases used in the metal etcher of the semiconductor industry are chlorine and boron chloride. Process gases are ionized in the reactor chamber to form free radicals by plasma, which etches off aluminum film from the wafer surface. To increase the product yield, by-products deposited on the chamber wall must be cleaned periodically during preventive maintenance. As the chamber is being cleaned, toxic gases are released which may disperse in the clean room posing heath threat to workers, contaminate process tool, and create wafer defects. The main obj

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24

Wu, Jian-Zhong. "Fourier transform based deconvolution analysis of frequency modulation lineshapes fluorocarbon radical densities in an ECR etcher from infrared diode laser spectroscopy /." 1995. http://catalog.hathitrust.org/api/volumes/oclc/34814751.html.

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