Bibliografías temáticas / HALL-sensor

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Literatura académica sobre el tema "HALL-sensor"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 12 de junio de 2025

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Artículos de revistas sobre el tema "HALL-sensor"

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Tymochko, M. D., and Ya M. Olikh. "ACOUSTOSENSITIVITY SENSOR BASED ON SEMICONDUCTOR HALL SENSOR." Sensor Electronics and Microsystem Technologies 4, no. 1 (2007): 44–49. http://dx.doi.org/10.18524/1815-7459.2007.1.113150.

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Schott, Ch, P. A. Besse, and R. S. Popovic. "Planar Hall effect in the vertical Hall sensor." Sensors and Actuators A: Physical 85, no. 1-3 (2000): 111–15. http://dx.doi.org/10.1016/s0924-4247(00)00328-9.

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Yu, Hui-yang, Ming Qin, and Meng Nie. "MEMS Hall effect pressure sensor." Electronics Letters 48, no. 7 (2012): 393. http://dx.doi.org/10.1049/el.2011.4052.

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in 't Hout, S. R., and S. Middelhoek. "High temperature silicon Hall sensor." Sensors and Actuators A: Physical 37-38 (June 1993): 26–32. http://dx.doi.org/10.1016/0924-4247(93)80007-4.

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Kvitkovič, J., and M. Majoroš. "Three-axis cryogenic Hall sensor." Journal of Magnetism and Magnetic Materials 157-158 (May 1996): 440–41. http://dx.doi.org/10.1016/0304-8853(95)01221-4.

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Zhang, Yong Jie, Zhi Yi Fang, and Jian Jin. "Design and Analysis of Dual Hall Position Sensor with Automatic Direction Recognizing and Pre-Positioning Function." Applied Mechanics and Materials 599-601 (August 2014): 860–63. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.860.

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As an electromagnetic position sensor, Hall position sensor is widely used in various fields. In this paper, we discussed the working principle of the Hall sensor, and proposed a new method on direction recognizing technology. The dual Hall sensor structure has automatical direction recognizing and pre-positioning function, which can improve the adaptability of the sensor. Meanwhile, this new design can be used for other position sensor applications.
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7

Zhang, Xi, Yiyun Zhao, Hui Lin, Saleem Riaz, and Hassan Elahi. "Real-Time Fault Diagnosis and Fault-Tolerant Control Strategy for Hall Sensors in Permanent Magnet Brushless DC Motor Drives." Electronics 10, no. 11 (2021): 1268. http://dx.doi.org/10.3390/electronics10111268.

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The Hall sensor is the most commonly used position sensor of the permanent magnet brushless direct current (PMBLDC) motor. Its failure may lead to a decrease in system reliability. Hence, this article proposes a novel methodology for the Hall sensors fault diagnosis and fault-tolerant control in PMBLDC motor drives. Initially, the Hall sensor faults are analyzed and classified into three fault types. Taking the Hall signal as the system state and the conducted MOSFETs as the system event, the extended finite state machine (EFSM) of the motor in operation is established. Meanwhile, a motor speed observer based on the super twisting algorithm (STA) is designed to obtain the speed signal of the proposed strategy. On this basis, a real-time Hall sensor fault diagnosis strategy is established by combining the EFSM and the STA speed observer. Moreover, this article proposes a Hall signal reconstruction strategy, which can generate compensated Hall signal to realize fault-tolerant control under single or double Hall sensor faults. Finally, theoretical analysis and experimental results validate the superior effectiveness of the proposed real-time fault diagnosis and fault-tolerant control strategy.
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8

Kuang, Xing Hong, Zhe Yi Yao, Zhe Yi Yao, and Shi Ming Wang. "Design of Rotational Speed Measurement System Based on the Hall Sensor." Applied Mechanics and Materials 427-429 (September 2013): 596–99. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.596.

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This paper introduces a design of a STC89C52 microcontroller as the main controller, the motor speed is measured by the Hall sensor. This design uses integrated Hall sensor, which has a frequency response, high precision and anti-interference ability. This article describes the working principle of the method and method of use of the Hall sensor measurement speed
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9

Tang, Wei, Fei Lyu, Dunhui Wang, and Hongbing Pan. "A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor." Sensors 18, no. 4 (2018): 1065. http://dx.doi.org/10.3390/s18041065.

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Hamiel, Steven R., Martin R. Tubach, Joel N. Bleicher, and James C. Cronan. "Determination of Palpebral Closure Using a Hall Sensor Magnet Pair." Otolaryngology–Head and Neck Surgery 110, no. 2 (1994): 174–76. http://dx.doi.org/10.1177/019459989411000206.

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A small device that can detect eyelid closure was designed using a Hall sensor and magnet. The ability of the sensor to differentiate blinks from saccadic motion is of vital interest in development of a device to alleviate complications of facial nerve paralysis. Twelve physically normal human subjects were used in this study. A small Hall sensor (3 × 2.5 × 1.1 mm), a device that detects magnetic fields, was attached to the lower eyelid near the lid margin, and an opposing small magnet (3 × 2 × 1 mm) was attached to the upper eyelid, also near the lid margin. Output potentials from the Hall sensor were monitored during eye blinks and saccadic eye movements to correlate sensor potentials with eye movements. Results indicate that the Hall sensor is effective at determining palpebral closure and discriminating eye closure from other eye movements. Therefore, we conclude that the Hall sensor is a reliable means for determining palpebral closure and is ideally suited for use in a facial prosthesis that uses the normal blink as a trigger to reanimate the contralateral paralyzed eyelid.
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Tesis sobre el tema "HALL-sensor"

1

Maricato, Efeso Francisco de Melo. "Sensor Hall de GaAs por implantação de ions." [s.n.], 2000. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259222.

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Orientador: Jacobus W. Swart<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação<br>Made available in DSpace on 2018-07-28T13:25:30Z (GMT). No. of bitstreams: 1 Maricato_EfesoFranciscodeMelo_M.pdf: 5710050 bytes, checksum: 922d33a93b7944d93f66aff4dde18594 (MD5) Previous issue date: 2000<br>Resumo: Neste trabalho projetamos, fabricamos e caracterizamos sensores magnéticos de efeito Hall. Realizamos um estudo sobre os princípios físicos envolvidos e figuras de mérito dos sensores (Tensão Hall, Sensibilidade, Tensão offset, Linearidade, Ruído e Coeficiente de temperatura) e, então, projetamos sensores Hall de várias geometrias, obtendo dispositivos com diferentes sensibilidades. Fabricamos estes dispositivos em camadas ativas de diferentes espessuras e dopagens com o objetivo de estudar o efeito destas variáveis na sensibilidades e linearidade dos dispositivos. O processo de fabricação desenvolvido é compatível com o processo de fabricação de transistores MESFET. Após o projeto dos sensores e processo de fabricação, fabricamos 5 níveis de máscaras através de um equipamento de feixe de elétrons. As camadas ativas foram obtidas por duas diferentes técnicas: implantação de íons e crescimento epitaxial. As regiões ativas implantadas foram dopadas com íons de 'SI POT. + SOB. 29¿ e a camada epitaxial dopada com silício, de modo que a concentração de portadores na camada ficasse na ordem de 1,0 x ¿10 POT. 17¿ 'CM POT. 3¿ e a espessura entre 0,2 - 0,5 'MU¿m. Após o encapsulamento dos dispositivos, caracterizamos os sensores com polarização de 1 - 7 mA e indução magnética entre O - 1,2 T (tesla). Os sensores fabricados apresentaram alta sensibilidade (88 - 820 V/A.T), tensão offset esperada e alta linearidade. Propomos alguns estudos sobre melhorias do processo de fabricação e sobre circuitos de condicionamento de sinais. ...Observação: O resumo, na íntegra, poderá ser visualizado no texto completo da tese digital<br>Abstract: In this work we designed, fabricated and characterized Hall-effect magnetic sensors. We studied the involved physical principies and figures of merit of sensors (Hali voltage, Sensitivity, Offset voltage, Linearity, Noise and Temperature coefficient) and, then, we designed Hall sensors of different shapes, obtaining devices with different sensitivities. We fabricated these devices in active layers of different thicknesses and doping levels with the objective to study the effect of these variables on the sensitivity and linearity of the devices. The developed process is compatible with the fabrication process of MESFET transistors. After the design of the sensorsand the process,we fabricateda set of 5 levels of masks through an electron-beam equipment. The active layers have been obtained by two different techniques: ion implantation and epitaxial growth. The implanted active regions have been doped with ions of 'SI POT. + SOB. 29¿ and the doped epitaxial layer with silicon, so that the concentration of carriers in the layer was of the order of 1,0 x ¿10 POT. 17¿¿CM POT. 3¿ and the thickness between 0.2 - 0.5 'MU¿m.After the packaging of the devices, we characterized the sensors with current bias of 1 - 7 mA and magnetic induction between O - 1.2 T (tesla).The fabricated Hall sensors presented high sensitivity (88 - 820 V/A.T), low offset voltage and high linearity. Based on the results, some additional studies on improvements on the fabrication process and the signal conditioning circuits are suggested. ...Note: The complete abstract is available with the full electronic digital thesis or dissertations<br>Mestrado<br>Mestre em Engenharia Elétrica
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2

Gonzales, Vizcarra Isaac Guillermo, and Aranda Walter Santiago Campos. "Sistema de levitación magnética usando sensor de efecto hall." Bachelor's thesis, Universidad Ricardo Palma, 2014. http://cybertesis.urp.edu.pe/handle/urp/1179.

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Los sistemas de suspensión magnética vienen usándose actualmente en aplicaciones diversas como trenes de alta velocidad; rodamientos para ejes de alta velocidad; motores lineales; entre otras aplicaciones que se encuentran en sistemas de transporte, equipos médicos, motores usados en ambientes limpios (clean-rooms), etc. Estos sistemas pueden ser del tipo atractivo o repulsivo. El primero ha sido desarrollado principalmente en Alemania, mientras que el segundo se ha desarrollado en Japón. En la presente tesis se ha desarrollado el sistema del tipo atractivo que es inherentemente inestable y que requiere de acción de control a fin de suspender una masa (esfera) en el aire a cierta distancia de un electroimán (solenoide).
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Ali, Raza. "Defect detection using eddy-currents and Hall effect sensor arrays." [Ames, Iowa : Iowa State University], 2007.

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4

Kawato, Yusuke. "Multi-DOF precision positioning methodology using two-axis Hall-effect sensors." Texas A&M University, 2003. http://hdl.handle.net/1969.1/3845.

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A novel sensing methodology using two-axis Hall-effect sensors is proposed, where the absolute positioning of a device atop any magnet matrix is possible. This methodology has the capability of micrometer-order positioning resolution as well as unrestricted translational and rotational range in planar 3-DOF (degree-of-freedom) motions, with potential capability of measuring all 6-DOF motions. This research presents the methodology and preliminary experimental results of 3-DOF planar motion measurements atop a Halbach magnet matrix using two sets of two-axis Hall-effect sensors. Analysis of the Halbach magnet matrix is presented to understand the generated magnetic field. The algorithm uses the Gaussian least squares differential correction (GLSDC) algorithm to estimate the relative position and orientation from the Hall-effect sensor measurements. A recursive discrete-time Kalman filter (DKF) is used in combination with the GLSDC to obtain optimal estimates of position and orientation, as well as additional estimates of velocity and angular velocity, which we can use to design a multivariable controller. The sensor and its algorithm is implemented to a magnetic levitation (maglev) stage positioned atop a Halbach magnet matrix. Preliminary experimental results show its position resolution capability of less than 10 µm and capable of sensing large rotations. Controllers were designed to close the control loop for the three planar degrees of freedom motion using the GLSDC outputs at a sampling frequency of 800 Hz on a Pentek 4284 digital signal processor (DSP). Calibration was done by comparing the laser interferometers’ and the GLSDC’s outputs to improve the positioning accuracy.
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5

Tian, Peng. "Graphene-based high spatial resolution hall sensors with potential application for data storage media characterisation." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/graphenebased-high-spatial-resolution-hall-sensors-with-potential-application-for-data-storage-media-characterisation(0bb9f59f-a9e2-42e8-ac1f-0adc93e9ae01).html.

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This thesis reports on two graphene-based structures that have been proposed and fabricated as possible prototypes for high-spatial-resolution Hall sensors with potential application in research on high-density magnetic recording technology such as bit patterned magnetic recording (BPMR) and other areas where the measurement of highly inhomogeneous fields is required. There is a direct graphene-metal contact in the first structure, which is named as TYPE I in this thesis, so that the anomalous Hall effect (AHE) in the ferromagnetic islands deposited on the graphene could be detected. Meanwhile, the graphene and the metal are isolated by an h-BN layer in the second structure which is named as TYPE II, so that only the stray field from the islands can be detected using the ordinary Hall effect (OHE).The transport measurements performed on TYPE I devices revealed there is no AHE or stray field signal detectable, and their Hall resistance relations are non-linear and do not pass through the origin point. A finite element simulation comparing the resistance of the empty graphene cross and the island-occupied cross indicates that the current in the graphene may not redistribute through the metallic islands due to interface current blocking, resulting in the non-appearance of the expected AHE signal. Moreover, an analysis on the data of the longitudinal magnetoresistance (MR) reveals that a two-fluid model and effective medium theory (EMT) model might be the major graphene MR mechanisms in the regime away from and near to the charge neutrality point (CNP) respectively. As a combined result of the above findings, a joint MR-Hall effect model under the condition of the presence of a pre-existing transverse offset current, is proposed to explain the unusual behaviour of the Hall measurement data of the TYPE I devices. The model gives qualitatively correct fitting for all longitudinal and transverse transport data of TYPE I devices. In addition, the nature of the graphene/metal contact is considered as the reason responsible for the non-appearance of the expected AHE and stray field signal, although further experimental work is needed, and suggested in the thesis, to clarify this issue. On the other hand, the TYPE II devices have shown their potential to be developed as a Hall sensor being able to detect a sub-micron magnetic island in the future, but there is still a large space for the performance of the devices to be improved. At the end of the thesis, future experimental work, which could lead to the eventual development of a high-sensitivity high-spatial-resolution Hall sensor on the basis of TYPE I and TYPE II structures, are suggested and described.
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6

Locke, Joshua R. "CMOS Compatible 3-Axis Magnetic Field Sensor using Hall Effect Sensing." Thesis, Rochester Institute of Technology, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10003075.

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<p> The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sensor capable of detecting the earth&rsquo;s magnetic field, with strength&rsquo;s of &sim;50 &mu;T. Preliminary testing of N-well Van Der Pauw structures using strong neodymium magnets showed proof of concept for hall voltage sensing, however, poor geometry of the structures led to a high offset voltage. A 1-axis Hall effect sensor was designed, fabricated and tested with a sensitivity of 1.12x10<sup>-3</sup> mV/Gauss using the RIT metal gate PMOS process. Poor geometry and insufficient design produced an offset voltage of 0.1238 volts in the 1-axis design; prevented sensing of the earth&rsquo;s magnetic field. The new design features improved geometry for sensing application, improved sensitivity and use the RIT sub-CMOS process. The completed 2-axis device showed an average sensitivity to large magnetic fields of 0.0258 &mu;V/Gauss at 10 mA supply current.</p>
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Mellet, Dieter Sydney-Charles. "An integrated continuous output linear power sensor using Hall effect vector multiplication." Diss., Pretoria : [s.n.], 2002. http://upetd.up.ac.za/thesis/available/etd-09012005-120807.

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Antunes, Pedro Ivo Teixeira de Carvalho. "Medição de posição de rotor em mancal magnético através de sensor Hall." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/3/3152/tde-10062013-152331/.

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A Escola Politécnica da Universidade de São Paulo (EPUSP, Brasil) e o Instituto Dante Pazzanese de Cardiologia (IDPC, Brasil) estão desenvolvendo conjuntamente um Dispositivo de Assistência Ventricular (DAV) baseado numa bomba de vazão mista e utilizando mancais magnéticos que objetivem substituir os mancais convencionais, pois o uso de mancal magnético neste dispositivo minimiza a hemólise e melhora o tempo de vida do DAV, isso em razão da ausência e contato de um mancal com a crase sanguínea o que, por fim, aumenta a vida útil do dispositivo. O mancal magnético utilizado para o DAV será o mancal do tipo híbrido. Este tipo de mancal combina ímãs permanentes com eletroímãs para realizar a levitação do rotor com controle apenas na direção axial do rotor. Na configuração original desse mancal magnético, um sensor indutivo detecta a posição axial do rotor. Esta posição é enviada a um controlador do tipo PID e processada, amplificada e enviada aos atuadores eletromagnéticos. A corrente enviada aos eletroímãs é controlada de maneira a manter o rotor sempre em uma posição axial fixa. No entanto, essa configuração exige o uso de um atuador eletromagnético contendo um furo para a instalação do sensor indutivo, impondo limitações no desempenho do atuador. Além disso, o sensor indutivo limita a miniaturização do mancal. Assim, para minimizar as limitações impostas pelo uso do sensor indutivo, este trabalho faz, primeiramente, um levantamento das diversas técnicas conhecidas para a medição da posição do rotor em mancais magnéticos. Como resultado, este trabalho identifica o uso do sensor Hall como a alternativa mais promissora. Este sensor responde à magnitude de um campo magnético que nele é aplicado. Fixando-se um ímã permanente ao rotor, obtém-se uma saída no sensor Hall proporcional ao deslocamento do rotor. Contudo, a leitura do sensor Hall é afetada ainda pelo campo magnético gerado pelos atuadores eletromagnéticos, o que é indesejável. Buscando minimizar essa influência, este trabalho apresenta algumas estratégias para eliminar, da saída do sensor Hall, a influência do campo gerado pelo atuador eletromagnético. Os métodos são testados através de experimentos de levitação em mancal magnético e a eficácia dos mesmos comprovada.<br>The Escola Politécnica of the University of São Paulo (EPUSP, Brazil) and the Institute Dante Pazzanese of Cardiology (IDPC, Brazil) are jointly developing a Ventricular Assist Device (VAD) based on a mixed flow pump with magnetic bearings. The VAD rotor has a conical shape with spiral impellers that impels and pressurizes the blood. The magnetic bearing eliminates mechanical contact between the pump rotor and the VAD body, minimizing hemolysis and improving the lifetime of the VAD. The magnetic bearing studied is the hybrid type that combines permanent magnets with electromagnets to execute active control in the axial direction of the rotor. In the original configuration, the bearing uses inductive sensor to detect the axial position of the rotor. The sensor readings are sent to a PID type controller, processed, amplified and sent to the electromagnets. The current supplied to the electromagnets are controlled in a manner to keep the rotor in a fixed axial position. However, this configuration requires the use of a hollowed core in the electromagnetic actuator, imposing limitations in its efficiency. Moreover, the use of an inductive sensor imposes limitations to pump downsizing. In order to minimize the limitations, this work conducts firstly a study about alternative techniques for measuring the rotor position in a magnetic bearing. As result, the Hall sensor is identified as the most promising alternative. The Hall sensor is a small semiconductor element available in the market that gives an electric signal with amplitude corresponding to the magnet field intensity applied to it. By fixing a permanent magnet to the rotor, the Hall sensor gives a signal according to the rotor displacement. However, the Hall sensor output is also affected by the magnetic field generated by the electromagnetic actuator of the bearing. This is not desirable for controlling the bearing. In order to minimize the mentioned influence, this work presents some methods to eliminate the influence of the actuator from the Hall sensor readings. The methods are tests in a magnetic bearing and the efficiency of these methods is demonstrated.
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Sadeghi, Mohammadreza. "Highly sensitive nano Tesla quantum well Hall Effect integrated circuits using GaAs-InGaAs-AlGaAs 2DEG." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/highly-sensitive-nano-tesla-quantum-well-hall-effect-integrated-circuits-using-gaasingaasalgaas-2deg(cec2fce1-7cf5-4d36-918d-873e0d38cac0).html.

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Hall Effect integrated circuits are used in a wide range of applications to measure the strength and/or direction of magnetic fields. These sensors play an increasingly significant role in the fields of automation, medical treatment and detection thanks largely to the enormous development of information technologies and electronic industries. Commercial Hall Effect ICs available in the market are all based on silicon technology. These ICs have the advantages of low cost and compatibility with CMOS technology, but suffer from poor sensitivity and detectability, high power consumption and low operating frequency bandwidths. The objective of this work was to develop and fabricate the first fully monolithic GaAs-InGaAs-AlGaAs 2-Dimensional Electron Gas (2DEG) Hall Effect integrated circuits whose performance enhances pre-existing technologies. To fulfil this objective, initially 2 µm gate length pHEMTs and 60/20 µm (L/W) Greek cross Hall Effect sensors were fabricated on optimised GaAs-In.18Ga.82As-Al.35Ga.65As 2DEG structures (XMBE303) suitable for both sensor and integrated circuit designs. The pseudomorphic high electron mobility transistors (pHEMTs) produced state-of-the-art output conductance, providing high intrinsic gain of 405, current cut-off frequency of 4.8 GHz and a low negative threshold voltage of -0.4 V which assisted in designing single supply ICs with high sensitivity and wide dynamic range. These pHEMTs were then accurately modelled for use in the design and simulation of integrated circuits. The corresponding Hall sensor showed a current sensitivity of 0.4 mV/mA.mT and a maximum magnetic DC offset of 0.35 mT at 1 V. DC digital (unipolar) and DC linear Hall Effect integrated circuits were then designed, simulated, fabricated and fully characterised. The DC linear Hall Effect IC provided an overall sensitivity of 8 mV/mT and a power consumption as low as 6.35 mW which, in comparison with commercial Si DC linear Hall ICs, is at least a factor of 2 more power efficient. The DC digital (unipolar) Hall Effect IC demonstrated a switching sensitivity of 6 mT which was at least ~50% more sensitive compared to existing commercial unipolar Si Hall ICs. In addition, a novel low-power GaAs-InGaAs-AlGaAs 2DEG AC linear Hall Effect integrated circuit with unprecedented sensitivity and wide dynamic range was designed, simulated, fabricated and characterised. This IC provided a sensitivity of 533 nV/nT, minimum field detectability of 177 nT (in a 10 Hz bandwidth) at frequencies from 500 Hz up to 200 kHz, consuming only 10.4 mW of power from a single 5 V of supply. In comparison to commercial Si linear Hall ICs, this IC provides an order of magnitude larger sensitivity, a factor of 4 higher detectability, 20 times wider bandwidth and over 20% lower power consumption (10.4 mW vs. 12.5 mW). These represent the first reported monolithic integrated circuits using a CMOS-like technology but in GaAs 2DEG technology and are extremely promising as complements, if not alternatives, to CMOS Si devices in high performance applications (such as high temperatures operations (>150 °C) and radiation hardened environment in the nuclear industry).
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Alaeinovin, Pooya. "Analysis and improvement of low precision Hall-sensor-controlled brushless dc motors." Thesis, University of British Columbia, 2010. http://hdl.handle.net/2429/24224.

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Hall-sensor-based Brushless dc (BLDC) motors are becoming very popular in wide range of applications, mainly due to their low cost, high efficiency, and reliable operation as compared to the conventional brushed motors. These machines have been extensively researched in the literature mainly under two common assumptions: each Hall-sensor produce square-wave signal of exactly 180 electrical degrees; and that the signals from the three Hall-sensors are exactly 120 electrical degrees apart. These assumptions are not necessarily the case, particularly for low to medium cost motors. A recently published manuscript investigated operation of motors with unbalanced Hall-sensor signals and introduced inaccurate positioning of the sensors as the cause of the unbalance. There, solutions have been proposed to mitigate the adverse effects of sensor positioning errors on performance of the motor. This thesis builds upon this recent publication by identifying another source of error in the Hall-sensor signals. Here, it is shown that inaccurate positioning of the Hall sensors and uneven magnetization of the tablet with which the Hall sensors react are the major factors contributing to the distortion of Hall sensor signals. It is shown here that errors in the Hall sensor signals result in unsymmetrical operation of the inverter which in turn leads to low-frequency harmonics in the electromagnetic torque; increases torque ripple and acoustic noise; and degrade overall dynamic performance of the drive. A control-level approach is proposed to mitigate the adverse effects of the errors in the Hall-sensor signals. In this approach a multi-stage digital filtering block is added to remove the errors in the original Hall-sensor signals. Each stage of the filter is designed to cancel the undesirable harmonics due to one of the error sources, the unevenly magnetized reaction tablet and the misaligned Hall sensors. An efficient realization of the proposed filter is presented that makes it possible to be potentially programmed inside existing motor controllers or implemented in a stand-alone microcontroller which can be packaged into a dongle circuit. The operation of typical low-precision industrial BLDC motors with the proposed filtering approach is shown to approach the performance of the motors with ideal Hall sensors.
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Libros sobre el tema "HALL-sensor"

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(Editor), S. Sitharama Iyengar, and Richard R. Brooks (Editor), eds. Distributed Sensor Networks (Chapman & Hall/Crc Computer and Information Science). Chapman & Hall/CRC, 2004.

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Capítulos de libros sobre el tema "HALL-sensor"

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Funk, Tobias, and Bernhard Wicht. "Hall Current Sensor." In Integrated Wide-Bandwidth Current Sensing. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-53250-5_5.

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Barua, Anomadarshi, and Mohammad Abdullah Al Faruque. "The Hall Sensor Security." In Encyclopedia of Cryptography, Security and Privacy. Springer Berlin Heidelberg, 2021. http://dx.doi.org/10.1007/978-3-642-27739-9_1652-1.

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Funk, Tobias, and Bernhard Wicht. "Hall Current Sensor Front-End." In Integrated Wide-Bandwidth Current Sensing. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-53250-5_6.

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Urbański, Michał, Michał Nowicki, Roman Szewczyk, and Wojciech Winiarski. "Flowmeter Converter Based on Hall Effect Sensor." In Advances in Intelligent Systems and Computing. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15835-8_29.

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5

Petruk, Oleg, Roman Szewczyk, Jacek Salach, and Michał Nowicki. "Digitally Controlled Current Transformer with Hall Sensor." In Recent Advances in Automation, Robotics and Measuring Techniques. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05353-0_61.

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Raković, Mirko, Miroslav Beronja, Aleksandar Batinica, Milutin Nikolić, and Branislav Borovac. "3-Axis Contact Force Fingertip Sensor Based on Hall Effect Sensor." In Advances in Intelligent Systems and Computing. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-49058-8_10.

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Wang, Wen-cheng. "A Motor Speed Measurement System Based on Hall Sensor." In Communications in Computer and Information Science. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-18129-0_69.

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8

Reischl, S., and U. Ausserlechner. "Programmable Linear Magnetic Hall-Effect Sensor with Excellent Accuracy." In Advanced Microsystems for Automotive Applications Yearbook 2002. Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-18213-6_27.

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Larrucea, Xabier, Silvana Mergen, and Alastair Walker. "A GSN Approach to SEooC for an Automotive Hall Sensor." In Communications in Computer and Information Science. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-44817-6_23.

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Petruk, Oleg, Maciej Kachniarz, Roman Szewczyk, and Adam Bieńkowski. "Investigation on Functional Properties of Hall-Effect Sensor Made of Graphene." In Recent Advances in Systems, Control and Information Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-48923-0_73.

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Actas de conferencias sobre el tema "HALL-sensor"

1

Sander, Christian, Carsten Leube, Taimur Aftab, Patrick Ruther, and Oliver Paul. "Isotropic 3D silicon hall sensor." In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2015. http://dx.doi.org/10.1109/memsys.2015.7051103.

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Avizzano, Carlo A., Diego Ferrazzin, Giuseppe M. Prisco, and Massimo Bergamasco. "Hall-effect sensor positional transducer." In Photonics East '99, edited by Gerard T. McKee and Paul S. Schenker. SPIE, 1999. http://dx.doi.org/10.1117/12.360354.

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Bicking, Robert, George Wu, Joe Murdock, Don Hoy, and Rusty Johnson. "A Hall Effect Rotary Position Sensor." In International Congress & Exposition. SAE International, 1991. http://dx.doi.org/10.4271/910270.

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4

Reymond, S., P. Kejik, and R. S. Popovic. "True 2D CMOS integrated Hall sensor." In 2007 IEEE Sensors. IEEE, 2007. http://dx.doi.org/10.1109/icsens.2007.4388537.

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5

Cai, Wei, Jeremy Chan, and David Garmire. "3-axes MEMS Hall-effect sensor." In 2011 IEEE Sensors Applications Symposium (SAS). IEEE, 2011. http://dx.doi.org/10.1109/sas.2011.5739801.

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Xie, Linguo, Zhiyou Zhang, and Jinglei Du. "The photonic spin Hall effect sensor." In Applied Optical Metrology II, edited by Erik Novak and James D. Trolinger. SPIE, 2017. http://dx.doi.org/10.1117/12.2272162.

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Lozanova, Siya, Avgust Ivanov, and Chavdar Roumenin. "Hall Sensor with Geometry-enhanced Sensitivity." In 2020 XXX International Scientific Symposium 'Metrology and Metrology Assurance (MMA). IEEE, 2020. http://dx.doi.org/10.1109/mma49863.2020.9254253.

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Ghosalkar, Ruta, Sarita Joshi, and Shashi A. Gangal. "Development of Si-based hall sensor: effect of electrode geometry on hall voltage." In Indo-Russian Workshop on Micromechanical Systems, edited by Vladimir I. Pustovoy and Vinoy K. Jain. SPIE, 1999. http://dx.doi.org/10.1117/12.369458.

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Chen, Weigang, Feng Du, Yue Zhuo, and Michael Anheuser. "A new type of hall current sensor." In 2011 IEEE International Instrumentation and Measurement Technology Conference (I2MTC). IEEE, 2011. http://dx.doi.org/10.1109/imtc.2011.5944094.

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Fan, Hua, Sujie Li, Yuanjun Cen, Quanyuan Feng, and Hadi Heidari. "A Horizontal Hall Sensor 3D Comsol Model." In 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2020. http://dx.doi.org/10.1109/mwscas48704.2020.9184586.

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Informes sobre el tema "HALL-sensor"

1

Taguchi, Kenichi, Kazuhiro Kamiya, Tatsuji Nakai, and Hitoshi Yabusaki. Development of Hall Ic for the Rotation Sensor. SAE International, 2005. http://dx.doi.org/10.4271/2005-08-0083.

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Lozanova, Siya. Relevant Phenomena to the Hall Effect in Sensor Devices. "Prof. Marin Drinov" Publishing House of Bulgarian Academy of Sciences, 2021. http://dx.doi.org/10.7546/crabs.2021.03.14.

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