Bibliografías temáticas / Localized GaN growth

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Literatura académica sobre el tema "Localized GaN growth"

Autor: Grafiati

Publicado: 11 de enero de 2025

Última modificación: 31 de julio de 2025

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Artículos de revistas sobre el tema "Localized GaN growth"

Chang, Chiao-Yun, Huei-Min Huang, Yu-Pin Lan, et al. "Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure." MRS Proceedings 1538 (2013): 303–7. http://dx.doi.org/10.1557/opl.2013.550.

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AbstractThe crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the form

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Sun, Haoran, Yuhui Chen, Yuhao Ben, et al. "Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells." Materials 16, no. 4 (2023): 1558. http://dx.doi.org/10.3390/ma16041558.

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GaN cap layer with different thicknesses was grown on each InGaN well layer during MOCVD growth for InGaN/GaN multiple quantum well (MQW) samples to study the influence of the cap layer on the photoluminescence (PL) characteristics of MQWs. Through the temperature-dependent (TD) PL spectra, it was found that when the cap layer was too thick, the localized states of the quantum wells were relatively non-uniform. The thicker the well layer, the worse the uniformity of the localized states. Furthermore, through micro-area fluorescence imaging tests, it was found that when the cap layer was too th

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Мохов, Е. Н., А. А. Вольфсон та О. П. Казарова. "Выращивание объёмных кристаллов AlN и GaN сублимационным сандвич-методом". Физика твердого тела 61, № 12 (2019): 2298. http://dx.doi.org/10.21883/ftt.2019.12.48537.17ks.

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The review of the results of growth of bulk Al and Ga nitride crystals on foreign substrates by the sublimation sandwich method (SSM) is presented. The kinetics and the mechanism of sublimation and condensation nitrides depending on the growth conditions, structure of the vapor phase, crystal orientation and the distance between the source and the seed are analyzed. It is experimentally established that by joint annealing of AlN and SiC the rate of AlN sublimation significantly increases due to formation of a liquid phase on the crystal surface. Non-uniform distribution of the liquid phase loc

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Ning, X. J., F. R. Chien, P. Pirouz, J. W. Yang, and M. Asif Khan. "Growth defects in GaN films on sapphire: The probable origin of threading dislocations." Journal of Materials Research 11, no. 3 (1996): 580–92. http://dx.doi.org/10.1557/jmr.1996.0071.

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Single crystal GaN films with a wurtzite structure were grown on the basal plane of sapphire. A high density of threading dislocations parallel to the c-axis crossed the film from the interface to the film surface. They were found to have a predominantly edge character with a Burgers vector. In addition, dislocation hal-loops, elongated along the c-axis of GaN, were also found on the prism planes. These dislocations had a mostly screw character with a [0001] Burgers vector. Substrate surface steps with a height of were found to be accommodated by localized elastic bending of GaN (0001)GaN plan

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Wang, C. K., Y. Z. Chiou, and H. J. Chang. "Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates." Crystals 9, no. 12 (2019): 677. http://dx.doi.org/10.3390/cryst9120677.

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In this study, GaN-based blue InGaN/GaN light-emitting diodes (LEDs) with different growth rates of the quantum barriers were fabricated and investigated. The LEDs with quantum barriers grown with a higher growth rate exhibit a lower leakage current and less non-radiative recombination centers in the multiple quantum wells (MQWs). Therefore, the LED with a higher barrier growth rate achieves a better light output power by 18.4% at 120 mA, which is attributed to weaker indium fluctuation effect in the QWs. On the other hand, the localized states created by indium fluctuation lead to a higher lo

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Yan, Luyi, Feng Liang, Jing Yang, Ping Chen, Desheng Jiang, and Degang Zhao. "The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior." Nanomaterials 14, no. 8 (2024): 703. http://dx.doi.org/10.3390/nano14080703.

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This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration

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El Amrani, Mohammed, Julien Buckley, Thomas Kaltsounis, et al. "Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy." Crystals 14, no. 6 (2024): 553. http://dx.doi.org/10.3390/cryst14060553.

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In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despite the current crowding effect in quasi-vertical structures, and an on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current–voltage characteristics were measured in the range of 313–433 K to investigate the mechanisms of leakage conduction in the device. At near-zero bias, thermionic emission (TE) was found to dominate. By increasing u

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Savini, G., M. I. Heggie, C. P. Ewels, N. Martsinovich, R. Jones, and A. T. Blumenau. "Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN." Materials Science Forum 483-485 (May 2005): 1057–60. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.1057.

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90 Shockley partial dislocations in GaN are investigated by first-principles calculations. This work is focussed on the electrical properties of dislocation cores, and on investigating the electrical fields around these defects. The band structure analysis shows that both the and core partials possess a midgap state. The -core dislocations give rise to a donor level Ev +0:87 eV that might explain the absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The acceptor level Ev + 1:11 eV localized at the -core dislocations might contribute to the yellow luminescence. These

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SURESH, S., V. GANESH, M. BALAJI, K. BASKAR, K. ASOKAN, and D. KANJILAL. "STRUCTURAL CHARACTERISTICS OF 70 MeV Si5+ ION IRRADIATION INDUCED NANOCLUSTERS OF GALLIUM NITRIDE." International Journal of Nanoscience 10, no. 04n05 (2011): 823–26. http://dx.doi.org/10.1142/s0219581x11009246.

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70 MeV Si ions irradiation at the liquid nitrogen temperature (77 K) induced nanoclustering on GaN epilayers grown by Metal Organic Chemical Vapor Deposition (MOCVD) are reported. HRXRD rocking curves show that there are no localized amorphization due to irradiation. Atomic force microscopy images reveal the formation of nanoclusters on the surface of the irradiated samples. On increasing the fluence the number of modified regions on the surface increases and resulted in three dimensional growth of nanocluster due to overlapping and coalescence. X-ray photoelectron spectroscopy (XPS) studies c

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Bassaler, Julien, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, and Philippe Ferrandis. "Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template." Journal of Applied Physics 131, no. 12 (2022): 124501. http://dx.doi.org/10.1063/5.0077107.

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Despite a high lateral breakdown voltage above 10 kV for large contact distances and a breakdown field of 5 MV cm−1 for short contact distances, an Al0.9Ga0.1N/GaN heterostructure with an 8 nm strained GaN channel grown on an AlN/sapphire template suffers from a low and anisotropic mobility. This work deals with a material study to elucidate this issue. Threading dislocations were observed along the growth direction in transmission electron microscopy pictures and are more in number in the (11−20) plane. Steps were also detected in this plane at the GaN channel interfaces. With the help of dev

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Tesis sobre el tema "Localized GaN growth"

Wehbe, Maya. "Modélisation et caractérisation des effets de nano-compliance pour la croissance épitaxiale localisée de GaN sur substrats Si." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALY041.

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Le nitrure de gallium (GaN) est un semiconducteur prometteur pour les microLEDs, mais lacroissance hétéroépitaxiale du GaN génère des dislocations qui réduisent leur efficacitéd’émission. Afin d’améliorer la qualité du GaN épitaxiée, on propose une approche qui consisteà faire la croissance des pyramides de GaN au-dessus de nanopiliers de GaN/AlN/Si(111)/SiO2.L’excès d’énergie à l'interface de chaque pyramide permettra aux piliers de subir une rotationdurant la coalescence des pyramides de GaN qui sont au-dessus afin que ceux-ci se coalescenten s’alignant cristallographiquement. Les objectifs

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Capítulos de libros sobre el tema "Localized GaN growth"

Neu, Gerrit Emanuel, Florian Christ, Tagir Iskhakov, et al. "Tunnel Linings." In Interaction Modeling in Mechanized Tunneling. Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-24066-9_5.

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AbstractIn this chapter, important research results for the development of a robust and damage-tolerant multimaterial tunnel lining are presented. This includes the production, design and optimization of fiber-reinforced hybrid segmental lining systems based on numerical models and experimental investigations under tunneling loads. In addition, novel tail void grouting materials are developed and optimized regarding their infiltration and hardening behavior while taking the interaction with the surrounding ground into account. In order to expand the applicability of mechanized tunneling regard

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Brown, Ross, and Augusto Rocha. "Analysing Diversity in Entrepreneurial Finance across Entrepreneurial Ecosystems." In The Oxford Handbook of Spatial Diversity and Business Economics. Oxford University Press, 2025. https://doi.org/10.1093/oxfordhb/9780198866190.013.0019.

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Abstract The chapter investigates the role of financial diversity in fostering economic growth and regional development within different entrepreneurial ecosystems (EEs). The chapter identifies a gap in the literature regarding the impact of financial diversity, defined as the variety of equity investors, on the vibrancy of EEs. Using real-time data from Crunchbase, the chapter examines the spatial diversity of equity investors in the UK, particularly in London and the peripheral EEs of Edinburgh and Glasgow. The findings reveal significant inter-regional differences, with more dynamic EEs lik

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Kelly, M. J. "Amorphous semiconductor multilayers." In Low-Dimensional Semiconductors. Oxford University PressOxford, 1995. http://dx.doi.org/10.1093/oso/9780198517818.003.0020.

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Abstract So far, all the materials physics and devices have used single-crystal multilayer semiconductor structures. Great effort has been made in the growth to achieve precise single-crystal properties and sharp interfaces between adjacent layers. During the fabrication of devices, the process steps attempt to preserve the crystalline integrity. In the past 20 years, hydrogenated amorphous Si has developed rapidly from a research material (first doped to make p-n junction devices in 1976) to the host material for the electronics of displays, with a $4 billion turnover in 1991-1992 (Le Comber

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Caradonna, Jeremy L. "The Future: 10 Challenges for Sustainability." In Sustainability. Oxford University Press, 2014. http://dx.doi.org/10.1093/oso/9780199372409.003.0011.

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Growing concerns about climate-change pollutants, the widening gap between the rich and the poor, resource shortages, and the world’s gamut of ecological problems have placed new pressures on sustainists. Creating a sustainable society that thrives within its biophysical limits is no longer seen as a distant and utopian objective; it’s now an urgent matter that, if neglected or mismanaged, will bring devastating consequences for the planet and the human economy that lives off of it. The increased political attention, institutional support, and financial commitment to the cause of sustainabilit

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"Luminescence of the isoelectronic impurities in garnet compounds under X-ray and synchrotron radiation excitations." In Book of Abstracts - RAD 2025 Conference. RAD Centre, Niš, Serbia, 2025. https://doi.org/10.21175/rad.abstr.book.2025.16.11.

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The regularities of the luminescence centers formation by the La3+ and Sc3+ isoelectronic impurities (IsIm) in oxides with garnet structure A3B5O12 (A=Y, Lu, Gd; B =Al, Ga) have been investigated. Such regularities have been revealed also for the antisite defects (AD) (YAl in YAG and LuAl in LuAG) as special kinds of IsIm. Creation of such type of ADs in the 0.05-0.25 at.% concentration is an irrevocable consequence of the single crystal (SC) growth of garnets at 1900-2000oC from high- temperature melt. At the same time, the single crystalline films (SC) of these garnets grown by the liquid ph

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Plumb, May Helena, Alejandra Dubcovsky, Moisés García Guzmán, Brook Danielle Lillehaugen, and Felipe H. Lopez. "Growing a Bigger Linguistics Through a Zapotec Agenda." In Decolonizing Linguistics. Oxford University PressNew York, 2024. http://dx.doi.org/10.1093/oso/9780197755259.003.0017.

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Abstract The Ticha Project is a digital endeavor focused on knowledge repatriation and language reclamation, guided by a Zapotec agenda that centers Zapotec goals and authority. This decolonial practice forges a collaborative, reciprocal scholarship where Zapotec and non-Native experts work together in pursuit of overlapping goals, forming an interdisciplinary community which resists the individualism of academia and draws strength from an inclusive Zapotec collective. In this chapter the authors detail Ticha’s working philosophy through two interrelated projects: (1) Caseidyneën Saën, an e-bo

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Actas de conferencias sobre el tema "Localized GaN growth"

Kvarekval, Jon. "Morphology of Localised Corrosion Attacks in Sour Environments." In CORROSION 2007. NACE International, 2007. https://doi.org/10.5006/c2007-07659.

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Abstract The number of sour oil and gas fields worldwide is increasing, as sweet fields are being depleted and high oil prices vouch for profitable development of sour oil and gas finds. Sour oil and gas production and transport always imply a risk of material damage and shutdowns due to CO2/H2S corrosion, and especially localised corrosion attacks. The mechanisms behind localised CO2/H2S corrosion are not fully explained, with unanswered questions regarding the effect of FeS corrosion film breakdown, contribution of galvanic effects from electronically conductive FeS films to the pit growth,

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Amri, Jamel, Egil Gulbrandsen, and Ricardo P. Nogueira. "Effect of Acetic Acid on Propagation and Stifling of Localized Attacks in CO2 Corrosion of Carbon Steel." In CORROSION 2009. NACE International, 2009. https://doi.org/10.5006/c2009-09284.

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Abstract The presence of acetic acid (HAc) has been identified as one factor that may contribute to enhance localized top-of-line corrosion attacks in gas condensate pipelines. The role of HAc on the growth of localized attacks in CO2 corrosion of carbon steel pipelines was studied by means of a pre-initiated localized attack electrode assembly (“artificial pit electrode”). The current flowing between the localized attack and the outer surface was measured with a zero resistance ammeter. It is shown that the corrosion potential increases with increasing HAc concentration. Depletion of HAc insi

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Sabata, A., C. S. Brossia, and M. Behling. "Localized Corrosion Resistance of Automotive Exhaust Alloys." In CORROSION 1998. NACE International, 1998. https://doi.org/10.5006/c1998-98549.

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Abstract Corrosion in automotive exhaust systems can be broadly classified as (a) cold end corrosion and (b) hot end corrosion. For the cold end, the requirements include inside-out perforation corrosion resistance and cosmetic corrosion resistance. Perforation corrosion causes noticeable degradation in noise quality and may even affect the back pressure. For the hot end, the key concern has been perforation corrosion resistance. With the use of oxygen sensors in catalytic converters, the failure criteria will become more stringent. Numerous accelerated corrosion tests have been used to rank m

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Brown, Bruce. "The Likelihood of Localized Corrosion in an H2S / CO2 Environment." In CORROSION 2015. NACE International, 2015. https://doi.org/10.5006/c2015-05855.

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Abstract Understanding the mechanisms that lead to localized corrosion in oil and gas pipeline is of great interest to corrosion engineers worldwide. In a research program which examined corrosion under slightly sour conditions due to an H2S/CO2 environment, experimental studies were carried out to identify the environmental parameters with the most influence on the likelihood of localized corrosion. Observations of localized corrosion that occurred in slightly sour conditions in a large scale flow loop under single phase and multiphase flow were used to develop a better understanding of how b

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Xu, Lining, Yunan Zhang, Wei Chang, Lei Zhang, Lihua Hu, and Minxu Lu. "Study on the Growth of Corrosion Scales on X65 Steel in CO2 Top-of-line Corrosion Environment." In CORROSION 2013. NACE International, 2013. https://doi.org/10.5006/c2013-02455.

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Abstract Carbon dioxide (CO2) corrosion is one of the most serious problems in the oil and gas industry, and CO2 Top-of-Line Corrosion (TLC) has caused many failures in wet gas pipelines. Corrosion behavior of X65 pipeline steel was studied in a high temperature and high pressure condensation autoclave, simulating the CO2 TLC environment, under both static and flowing condition. A series of experiments were carried out at the test duration of 3 d, 7 d, 15 d and 29d. Under different test duration, the thickness, compactness and crystalline state of corrosion scales were compared and the growth

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Papavinasam, Sankara, Alex Doiron, and Tharani Panneerselvam. "Integration of Localized Internal Pitting Corrosion and Flow Models." In CORROSION 2012. NACE International, 2012. https://doi.org/10.5006/c2012-01262.

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Abstract A model was previously developed to predict internal pitting corrosion of oil and gas pipelines. The model considers the influence of temperature, total pressure, H2S partial pressure, CO2 partial pressure, the concentrations of sulphide, bicarbonate and chloride ions and the production rates of oil, gas, water, and solids. The model was based on experiments carried out in the laboratory at high pressure and high temperature under the operating conditions of the oil and gas pipelines and was validated by field trials and using field data. The model accounts for the statistical nature

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Hu, Xinming, Ismarullizam Mohd Ismail, and Anne Neville. "Investigation of Pitting Corrosion and Inhibition in Sweet Conditions." In CORROSION 2013. NACE International, 2013. https://doi.org/10.5006/c2013-02361.

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Abstract Sweet pitting corrosion related failures are a prime concern in oil and gas internal pipelines. Often, these types of failure have a great impact on the safety and environmental matters and can cause severe financial consequences to the operator. Chemical inhibitors have been used to provide effective protection for assets against both localized corrosion and general corrosion. In order to develop superior localized corrosion inhibitors, a better understanding of the mechanisms of the action and interaction of pitting and the film are required. An extensive study on the inhibition of

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Gui, F., L. Cao, Ramgopal Thodla, and N. Sridhar. "Localized Corrosion and Stress Corrosion Cracking of UNS S32750 in H2S Containing Environment." In CORROSION 2016. NACE International, 2016. https://doi.org/10.5006/c2016-07397.

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Abstract Stress corrosion cracking (SCC) of stainless steels and Ni-base alloys in chloride environments has been widely studied and the results to date suggest that SCC only occurs at potentials above a critical potential. Many researchers have demonstrated that this critical potential is the repassivation potential for localized corrosion of the material of interest. Corrosion resistant alloys (CRAs) have been widely used in the oil and gas production environments where low alloy steels typically have lower chance to withstand the corrosive conditions. It is highly likely that SCC of CRAs on

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Eckert, Richard, Henry Aldrich, and B. G. Pound. "Biotic Pit Initiation on Pipeline Steel in the Presence of Sulfate Reducing Bacteria." In CORROSION 2004. NACE International, 2004. https://doi.org/10.5006/c2004-04590.

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Abstract Pipeline steel coupons were exposed in a model system containing Enterobacter aerogenes, Clostridium acetobutylicum and Desulfovibrio desulfuricans. After various exposure periods, the coupons were preserved, embedded and examined using phase contrast and UV fluorescence microscopy, transmission electron microscopy and scanning electron microscopy. Corrosion pit initiation and growth were compared with biofilm characteristics, particularly with respect to the sulfate reducing bacteria (SRB). Distinct changes in SRB morphology were observed over time when the bacteria were involved in

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Pessu, Frederick, Richard Barker, and Anne Neville. "Understanding Pitting Corrosion Behavior of X-65 (UNS K03014) Carbon Steel in CO2 Saturated Environments: the Temperature Effect." In CORROSION 2014. NACE International, 2014. https://doi.org/10.5006/c2014-4214.

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Abstract Carbon dioxide (CO2) related pitting and localized corrosion failures are of primary concern within the oil and gas industry. In environments saturated with both CO2 and H2S gas, the mechanisms by which pitting of carbon steel occurs can be complex and at times, unpredictable. The film formation characteristics and morphology in either CO2 and/or H2S-containing systems significantly influences the localized/pitting corrosion behavior of carbon steel materials. This paper presents the first part of a parametric study on pitting corrosion of carbon steel in CO2 saturated brines. This wo

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Informes sobre el tema "Localized GaN growth"

O'Connell, Kelly, David Burdick, Melissa Vaccarino, Colin Lock, Greg Zimmerman, and Yakuta Bhagat. Coral species inventory at War in the Pacific National Historical Park: Final report. National Park Service, 2024. http://dx.doi.org/10.36967/2302040.

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The War in the Pacific National Historical Park (WAPA), a protected area managed by the National Park Service (NPS), was established "to commemorate the bravery and sacrifice of those participating in the campaigns of the Pacific Theater of World War II and to conserve and interpret outstanding natural, scenic, and historic values on the island of Guam." Coral reef systems present in the park represent a vital element of Guam?s cultural, traditional, and economical heritage, and as such, are precious and in need of conservation. To facilitate the management of these resources, NPS determined t

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