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Tesis sobre el tema "Metal oxide semiconductors"

Autor: Grafiati

Publicado: 4 de junio de 2021

Última modificación: 30 de julio de 2024

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1

Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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2

Wu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

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3

Al-Ahmadi, Ahmad Aziz. "Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /." Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

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4

Liu, Kou-chen. "Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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5

Höhr, Timm. "Quantum-mechanical modeling of transport parameters for MOS devices /." Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.

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Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.<br>Summary in German and English, text in English. Includes bibliographical references (p. 123-132).

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6

Gurcan, Zeki B. "0.18 [mu]m high performance CMOS process optimization for manufacturability /." Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

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7

Wu, Ting. "Design of terabits/s CMOS crossbar switch chip /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.<br>Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.

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8

Wu, Xu Sheng. "Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.

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9

Modzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

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10

Trivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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11

Khan, Shamsul Arefin. "Deep sub-micron MOS transistor design and manufacturing sensitivity analysis /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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12

Huang, Amy. "On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /." Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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13

Yoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.

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14

Shelley, Valerie Anderson 1957. "Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276801.

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The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model cl

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15

Pesci, Federico M. "Metal oxide semiconductors employed as photocatalysts during water splitting." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.

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Photocatalytic water splitting has attracted significant interest in recent decades as it offers a clean and environmentally friendly route for the production of hydrogen. A key challenge remains the development of systems that employ abundant, non-toxic and inexpensive materials to dissociate water efficiently using sunlight. Titanium dioxide (TiO2), tungsten trioxide (WO3) and hematite (α-Fe2O3) are among the most studied photoanodes employed during water splitting because of the position of their valence band which is suitable for oxidising water to oxygen, and their low costs. However repo

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16

Waghe, Anil Bhalchandra. "Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/WagheAB2003.pdf.

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17

Özdağ, Pınar Güneş Mehmet. "Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/." [s.l.]: [s.n.], 2005. http://library.iyte.edu.tr/tezler/master/fizik/T000397.pdf.

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Thesis (Master)--İzmir Institute of Technology, İzmir, 2005<br>Keywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)

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18

Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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19

Chan, Wan Tim. "CMOS-compatible zero-mask one time programmable (OTP) memory design /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.

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20

Duffy, Christopher James. "Modeling hot-electron injection and impact ionization in pFET's." Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/14796.

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21

Wang, Haihong. "Advanced transport models development for deep submicron low power CMOS device design /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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22

PUZZOVIO, Delia. "Surface interaction mechanisms in metal-oxide semiconductors for alkane detection." Doctoral thesis, Università degli studi di Ferrara, 2009. http://hdl.handle.net/11392/2389140.

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Gas sensors based on semiconductive materials have gained an increasing interest, thanks to their advantageous characteristics. However, their intrinsic lack of selectivity made research in this eld to come to a standstill. Such devices are mainly applied to environmental and indoor monitoring. A clearer analysis of surface reaction phenomena is the key to nd a solution to the problem of limited selectivity. This approach has been applied to gases of great interest, such as alkanes. The main aim of this dissertation is to clarify some theoretical and experimental aspects related to the s

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23

Bowen, Andrew. "Anodisation and study of oxide films formed on zirconium." Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328407.

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24

Yellai, Kashyap Williams John R. "Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/YELLAI_KASHYAP_13.pdf.

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25

Shum, Roger Chi Fai Carleton University Dissertation Engineering Electrical. "A timing macro model for performance optimization of CMOS logic circuits." Ottawa, 1992.

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26

Hildreth, Scott A. "Statistical SPICE parameter extraction for an N-Well CMOS process /." Online version of thesis, 1995. http://hdl.handle.net/1850/12177.

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27

Csutak, Sebastian Marius. "Optical receivers and photodetectors in 130nm CMOS technology." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3036588.

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28

Vega, Reinaldo A. "Schottky field effect transistors and Schottky CMOS circuitry /." Online version of thesis, 2006. http://hdl.handle.net/1850/5179.

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29

Bialuschewski, Danny [Verfasser]. "Laser-assisted Modification of Metals and Metal Oxide Semiconductors as Photoactive Materials / Danny Bialuschewski." München : Verlag Dr. Hut, 2020. http://d-nb.info/1219477699/34.

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30

Ali, Danish. "Coulomb blockade in silicon-on-insulator." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321368.

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31

Carruthers, Colin. "Low noise operation in deep depletion mode MOS transistors." Thesis, University of Edinburgh, 1989. http://hdl.handle.net/1842/10866.

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32

Price, David T. "N-Well CMOS process integration /." Online version of thesis, 1992. http://hdl.handle.net/1850/11261.

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33

John, Soji. "UHVCVD growth of Si₁-x-yGexCy epitaxial materials and application in heterostructure MOS devices /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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34

Upadhyaya, Parag. "High IIP2 CMOS doubly balanced quadrature sub-harmonic mixer for 5 GHz direct conversion receiver." Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Spring2005/p%5Fupadhyaya%5F050505.pdf.

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35

Zeng, Xu, and 曾旭. "Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235475.

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36

Zeng, Xu. "Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics /." Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1966980X.

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37

Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semico

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38

Du, Xiaohua. "Understanding and optimization of gas sensors based on metal oxide semiconductors." Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3284441.

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39

Beglitis, N. "First-principles studies of surface defects of model metal-oxide semiconductors." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1324515/.

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In this thesis, three different model metal-oxide semiconductor systems will be discussed. First, the impact of hydroxyl vacancies, OHvac, on the geometry, electronic structure, and mechanical properties of single-walled aluminosilicate, (Al2SiO7H4)N, and aluminogermanate, (Al2GeO7H4)36, nanotubes is investigated. It is found that, with the exception of one OHvac localised on the outer wall of the (Al2GeO7H4)36 tube, these defects induce occupied and empty states in the band gap. Those states are found to be highly localised both in energy and in real space. Different magnetisation states are

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40

AHMED, ABDELKADER ABDELHAMID MOHAMED. "Metal oxide semiconductors as humidity and NOx sensors for environmental monitoring." Doctoral thesis, Politecnico di Torino, 2014. http://hdl.handle.net/11583/2528295.

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Semiconducting metal oxide (SMO) sensors are one of the most widely studied groups of chemiresistive gas sensors due to their unique advantages such as low cost, small size, measurement simplicity, durability, ease of fabrication, and low detection limits (< ppm levels). Moreover, most SMO based sensors tend to be long-lived and somewhat resistant to poisoning. The SMO undergoes reduction or oxidation while reacting with the target gas and this process causes an exchange of electrons at a certain characteristic rate, thereby affecting the sensor’s resistance and yielding a certain signal. The

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41

Gajera, Dipesh. "Process costing of microchip." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4726.

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Thesis (M.S.)--West Virginia University, 2006.<br>Title from document title page. Document formatted into pages; contains vii, 92 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 85-91).

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42

Wu, Zhenghui. "Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.

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Organic photovoltaics have shown much promise as an alternative photovoltaic technology for application in low-cost, large-scale and flexible solar cells. The application of metal oxides in organic solar cells (OSCs) and the impact of the properties of metal oxide/organic hetero-interfaces on cell performance have attracted a lot of attention. The metal oxide/organic interfaces have a crucial impact on interfacial charge transfer, charge collection and the overall device performance. This thesis is aimed at clarifying the principal interfacial phenomena occurring at the metal oxide/organic het

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43

Chun, Young Tea. "Charge transfer characteristic of zinc oxide nanowire devices and their applications." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708978.

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44

Ouyang, Qiqing Christine. "Physical model enhancement and exploration of bandgap engineering in novel sub-100nm pMOSFETs /." Digital version:, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992880.

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45

Haasmann, Daniel Erwin. "Active Defects in 4H–SiC MOS Devices." Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.

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The research findings presented in this thesis have provided several key contributions towards a better understanding of the SiC–SiO2 interface in SiC MOS structures. The electrically active defects directly responsible for degrading the channel-carrier mobility in 4H–SiC MOSFETs have been identified and a novel technique to detect these defects in 4H–SiC MOS capacitors has been proposed and experimentally demonstrated. With a better understanding of defects at the SiC–SiO2 interface two alternative gate oxide growth processes have been proposed to overcome the practical limitations associated

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46

Zhang, Xibo. "RF integrated circuit design options : from technology to layout /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20ZHANG.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.<br>Includes bibliographical references (leaves 59-61). Also available in electronic version. Access restricted to campus users.

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47

李加碧 and Stella Li. "Interface state generation induced by Fowler-Nordheim tunneling in mosdevices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221403.

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48

Correll, Jeffrey. "The design and implementation of an 8 bit CMOS microprocessor /." Online version of thesis, 1992. http://hdl.handle.net/1850/11649.

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49

Bachelu, Carol R. Carleton University Dissertation Engineering Electrical. "A Topological single-layer routing algorithm and its application to leaf cell synthesis." Ottawa, 1992.

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50

Wemple, Ivan L. "Parasitic substrate modeling for monolithic mixed analog/digital circuit design and verification /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/5944.

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