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Artículos de revistas sobre el tema "Metal oxide semiconductors"

Autor: Grafiati

Publicado: 4 de junio de 2021

Última modificación: 30 de julio de 2024

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1

Jeon, Yunchae, Donghyun Lee, and Hocheon Yoo. "Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications." Coatings 12, no. 2 (February 4, 2022): 204. http://dx.doi.org/10.3390/coatings12020204.

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Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging app

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2

Pandit, Bhishma, and Jaehee Cho. "AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts." Applied Sciences 8, no. 11 (November 1, 2018): 2098. http://dx.doi.org/10.3390/app8112098.

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions,

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3

Díaz, Carlos, Marjorie Segovia, and Maria Luisa Valenzuela. "Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation: A Review." Photochem 2, no. 3 (August 5, 2022): 609–27. http://dx.doi.org/10.3390/photochem2030041.

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Most dyes used in various industries are toxic and carcinogenic, thus posing a serious hazard to humans as well as to the marine ecosystem. Therefore, the impact of dyes released into the environment has been studied extensively in the last few years. Heterogeneous photocatalysis has proved to be an efficient tool for degrading both atmospheric and aquatic organic contaminants. It uses the sunlight in the presence of a semiconductor photocatalyst to accelerate the remediation of environmental contaminants and the destruction of highly toxic molecules. To date, photocatalysis has been considere

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4

Matsumoto, Y., H. Koinuma, T. Hasegawa, I. Takeuchi, F. Tsui, and Young K. Yoo. "Combinatorial Investigation of Spintronic Materials." MRS Bulletin 28, no. 10 (October 2003): 734–39. http://dx.doi.org/10.1557/mrs2003.215.

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AbstractHigh-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic s

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5

Robertson, John, and Zhaofu Zhang. "Doping limits in p-type oxide semiconductors." MRS Bulletin 46, no. 11 (November 2021): 1037–43. http://dx.doi.org/10.1557/s43577-021-00211-3.

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AbstractThe ability to dope a semiconductor depends on whether the Fermi level can be moved into its valence or conduction bands, on an energy scale referred to the vacuum level. For oxides, there are various suitable n-type oxide semiconductors, but there is a marked absence of similarly suitable p-type oxides. This problem is of interest not only for thin-film transistors for displays, or solar cell electrodes, but also for back-end-of-line devices for the semiconductor industry. This has led to a wide-ranging search for p-type oxides using high-throughput calculations. We note that some pro

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6

Yoshitake, Michiko. "General Method for Predicting Interface Bonding at Various Oxide–Metal Interfaces." Surfaces 7, no. 2 (June 3, 2024): 414–27. http://dx.doi.org/10.3390/surfaces7020026.

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Interface termination bonding between metal oxide and metals is discussed from the viewpoint of thermodynamics. The method of interface termination prediction proposed by the authors for Al2O3–metal and ZnO–metal interfaces is extended to a general interface between metal-oxide and metals. The extension of the prediction method to the interface between metal oxides and elemental semiconductors is also discussed. Information on interface bonding was extracted by carefully examining the experimental results and first-principles calculations in the references. The extracted information on interfa

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7

Kim, Jungho, and Jiwan Kim. "Synthesis of NiO for various optoelectronic applications." Ceramist 25, no. 3 (September 30, 2022): 320–31. http://dx.doi.org/10.31613/ceramist.2022.25.3.02.

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Oxide semiconductors have developed rapidly in a short period of time in various industrial fields due to their ability to be easily manufactured at low temperatures and recoverability of electrical properties. Among these oxide semiconductors, nickel oxide (NiO) is one of the most studied transition metal oxides. NiO is a p-type semiconductor with a wide band gap at room temperature, and has advantages of low toxicity, low cost, and excellent stability. Due to these advantages, NiO is widely used in various industrial fields such as gas sensors. In this paper, various synthesis methods of NiO

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8

Wu, Jianhao. "Performance comparison and analysis of silicon-based and carbon-based integrated circuits under VLSI." Applied and Computational Engineering 39, no. 1 (February 21, 2024): 244–50. http://dx.doi.org/10.54254/2755-2721/39/20230605.

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Since 1960, the semiconductor industry has invented Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) technologies. Subsequently, the semiconductor-based integrated circuit industry has led a new generation of information revolution, driving the rapid development of various electronic circuit technologies worldwide. With the physical limitations of the silicon semiconductor process, Moores Law is also approaching its physical limit. In the search for new semiconductor materials, carbon nanotube semiconductors have become one of the ca

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9

Li, Jiawei. "Recent Progress of β-Ga2O3 and Transition Metal doped β- Ga2O3 Structure and Properties". Highlights in Science, Engineering and Technology 99 (18 червня 2024): 247–52. http://dx.doi.org/10.54097/er1nze77.

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Oxide semiconductor material formed from oxygen and a metal is a compound semiconductor material. Important oxide semiconductor materials include Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, Ga2O3 and others. Oxide semiconductors have been receiving strong attention and are widely used in different fields such as solar cells and photovoltaic technology. Due to the development of technology, the high-performance techniques demand more from the parts. Semiconductor is an intensively researched substance that can be used in a wide range of technologies. β-Ga2O3 is a metal oxide that has good pro

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10

Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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11

Sosa Lissarrague, Matías H., Sameer Alshehri, Abdullah Alsalhi, Verónica L. Lassalle, and Ignacio López Corral. "Heavy Metal Removal from Aqueous Effluents by TiO2 and ZnO Nanomaterials." Adsorption Science & Technology 2023 (January 24, 2023): 1–15. http://dx.doi.org/10.1155/2023/2728305.

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The presence of heavy metals in wastewater, such as Ni, Pb, Cd, V, Cr, and Cu, is a serious environmental problem. This kind of inorganic pollutant is not biodegradable for several years, and its harmful effect is cumulative. Recently, semiconductor nanomaterials based on metal oxides have gained interest due to their efficiency in the removal of heavy metals from contaminated water, by inducing photocatalytic ion reduction when they absorb light of the appropriate wavelength. The most commonly applied semiconductor oxides for these purposes are titanium oxide (TiO2), zinc oxide (ZnO), and bin

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12

Ye, Heqing, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam, and Se Hyun Kim. "Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing." Nanomaterials 10, no. 7 (July 3, 2020): 1304. http://dx.doi.org/10.3390/nano10071304.

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The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were

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13

Garcia-Peiro, Jose I., Javier Bonet-Aleta, Carlos J. Bueno-Alejo, and Jose L. Hueso. "Recent Advances in the Design and Photocatalytic Enhanced Performance of Gold Plasmonic Nanostructures Decorated with Non-Titania Based Semiconductor Hetero-Nanoarchitectures." Catalysts 10, no. 12 (December 14, 2020): 1459. http://dx.doi.org/10.3390/catal10121459.

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Plasmonic photocatalysts combining metallic nanoparticles and semiconductors have been aimed as versatile alternatives to drive light-assisted catalytic chemical reactions beyond the ultraviolet (UV) regions, and overcome one of the major drawbacks of the most exploited photocatalysts (TiO2 or ZnO). The strong size and morphology dependence of metallic nanostructures to tune their visible to near-infrared (vis-NIR) light harvesting capabilities has been combined with the design of a wide variety of architectures for the semiconductor supports to promote the selective activity of specific cryst

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14

John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the e

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15

Meng, Fan-Jian, Rui-Feng Xin, and Shan-Xin Li. "Metal Oxide Heterostructures for Improving Gas Sensing Properties: A Review." Materials 16, no. 1 (December 27, 2022): 263. http://dx.doi.org/10.3390/ma16010263.

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Metal oxide semiconductor gas sensors are widely used to detect toxic and inflammable gases in industrial production and daily life. The main research hotspot in this field is the synthesis of gas sensing materials. Previous studies have shown that incorporating two or more metal oxides to form a heterojunction interface can exhibit superior gas sensing performance in response and selectivity compared with single phase. This review focuses on mainly the synthesis methods and gas sensing mechanisms of metal oxide heterostructures. A significant number of heterostructures with different morpholo

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16

Yang, Allen Jian, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu та ін. "Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors". Nature Electronics 5, № 4 (квітень 2022): 233–40. http://dx.doi.org/10.1038/s41928-022-00753-7.

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AbstractTwo-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. Th

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17

Li, Haoyang, Yue Zhou, Zhihao Liang, Honglong Ning, Xiao Fu, Zhuohui Xu, Tian Qiu, Wei Xu, Rihui Yao, and Junbiao Peng. "High-Entropy Oxides: Advanced Research on Electrical Properties." Coatings 11, no. 6 (May 24, 2021): 628. http://dx.doi.org/10.3390/coatings11060628.

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The concept of “high entropy” was first proposed while exploring the unknown center of the metal alloy phase diagram, and then expanded to oxides. The colossal dielectric constant found on the bulk high-entropy oxides (HEOs) reveals the potential application of the high-entropy oxides in the dielectric aspects. Despite the fact that known HEO thin films have not been reported in the field of dielectric properties so far, with the high-entropy effects and theoretical guidance of high entropy, it is predictable that they will be discovered. Currently, researchers are verifying that appropriately

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18

Ouyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin, and Hui Sun. "Research Progress of p-Type Oxide Thin-Film Transistors." Materials 15, no. 14 (July 8, 2022): 4781. http://dx.doi.org/10.3390/ma15144781.

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with

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19

Pascariu, Petronela, Carmen Gherasim, and Anton Airinei. "Metal Oxide Nanostructures (MONs) as Photocatalysts for Ciprofloxacin Degradation." International Journal of Molecular Sciences 24, no. 11 (May 31, 2023): 9564. http://dx.doi.org/10.3390/ijms24119564.

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In recent years, organic pollutants have become a global problem due to their negative impact on human health and the environment. Photocatalysis is one of the most promising methods for the removal of organic pollutants from wastewater, and oxide semiconductor materials have proven to be among the best in this regard. This paper presents the evolution of the development of metal oxide nanostructures (MONs) as photocatalysts for ciprofloxacin degradation. It begins with an overview of the role of these materials in photocatalysis; then, it discusses methods of obtaining them. Then, a detailed

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20

Gupta, Himanshi, Naina Gautam, Subodh K. Gautam, R. G. Singh, and Fouran Singh. "Semiconductor-to-metal transition in nanocomposites of wide bandgap oxide semiconductors." Journal of Alloys and Compounds 894 (February 2022): 162392. http://dx.doi.org/10.1016/j.jallcom.2021.162392.

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21

Lin, Chih-Hsuan, and Kuei-Ann Wen. "Power Pad Based on Structure Stacking for Ultralow-Power Three-Axis Capacitive Sensing Applications." Journal of Nanoelectronics and Optoelectronics 16, no. 4 (April 1, 2021): 630–41. http://dx.doi.org/10.1166/jno.2021.2982.

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Ultralow-power sensing systems are a trend in handheld devices. The leakage-current-induced power consumption of traditional power pads has not been able to satisfy the specifications of three-axis ultralow-power sensing systems at high temperatures. In this paper, we present a transient detector and delay cell based on resistor and capacitor charge and discharge, two layers of structure stacking based on a metal–oxide–semiconductor, and gate-driven/substrate-driven/gate and substrate-driven methods to guide away the electrostatic current when electrostatic discharge events occur without influ

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22

Kajitani, Tsuyoshi, Yuzuru Miyazaki, Kei Hayashi, Kunio Yubuta, X. Y. Huang, and W. Koshibae. "Thermoelectric Energy Conversion and Ceramic Thermoelectrics." Materials Science Forum 671 (January 2011): 1–20. http://dx.doi.org/10.4028/www.scientific.net/msf.671.1.

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Oxide thermoelectrics are relatively new materials that are workable at temperatures in the range of 400K≤T≤1200K. There are several types of thermoelectric oxide, namely, cobalt oxides (p-type semi-conductors), manganese oxides (n-type) and zinc oxides (n-type semi-conductors) for high temperature energy harvesting. The Seebeck coefficient of 3d metal oxide thermoelectrics is relatively high due to either high density of states at Fermi surfaces or spin entropy flow associated with the carrier flow. The spin entropy part dominates the Seebeck coefficient of 3d-metal oxides at temperatures abo

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23

Mao, Tan, Mengchen Liu, Liyuan Lin, Youliang Cheng, and Changqing Fang. "A Study on Doping and Compound of Zinc Oxide Photocatalysts." Polymers 14, no. 21 (October 23, 2022): 4484. http://dx.doi.org/10.3390/polym14214484.

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As an excellent semiconductor photocatalyst, zinc oxide is widely used in the field of photocatalysis and is regarded as one of the most reliable materials to solve environmental problems. However, because its band gap energy limits the absorption of visible light and reduces the efficiency of catalytic degradation, it needs to be doped with other substances or compounded with other substances and precious metal. This paper summarizes the research on this aspect at home and abroad in recent years, introduces the doping of transition metal ions by zinc oxide, the compounding of zinc oxide with

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24

Kiriakidis, George, and Vassilios Binas. "Metal oxide semiconductors as visible light photocatalysts." Journal of the Korean Physical Society 65, no. 3 (August 2014): 297–302. http://dx.doi.org/10.3938/jkps.65.297.

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25

Saha, H., and C. Chaudhuri. "Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration." Defence Science Journal 59, no. 6 (November 24, 2009): 557–67. http://dx.doi.org/10.14429/dsj.59.1560.

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26

Toriumi, Akira. "0.1μm complementary metal–oxide–semiconductors and beyond". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, № 6 (листопад 1996): 4020. http://dx.doi.org/10.1116/1.588635.

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27

Anta, Juan A. "Electron transport in nanostructured metal-oxide semiconductors." Current Opinion in Colloid & Interface Science 17, no. 3 (June 2012): 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.

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28

Lee, Sunghwan, Donghun Lee, Fei Qin, Yuxuan Zhang, Molly Rothschild, Han Wook Song, and Kwangsoo No. "(Invited) Oxide Electronics and Recent Progress in Bipolar Applications." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1071. http://dx.doi.org/10.1149/ma2022-01191071mtgabs.

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The discovery of oxide electronics is of increasing importance today as one of the most promising new technologies and manufacturing processes for a variety of electronic and optoelectronic applications such as next-generation displays, batteries, solar cells, memory devices, and photodetectors[1]. The high potential use seen in oxide electronics is due primarily to their high carrier mobilities and their ability to be fabricated at low temperatures[2]. However, since the majority of oxide semiconductors are n-type oxides, current applications are limited to unipolar devices, eventually develo

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29

Constantinoiu, Izabela, and Cristian Viespe. "ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review." Sensors 20, no. 18 (September 8, 2020): 5118. http://dx.doi.org/10.3390/s20185118.

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Surface acoustic wave (SAW) gas sensors are of continuous development interest to researchers due to their sensitivity, short detection time, and reliability. Among the most used materials to achieve the sensitive film of SAW sensors are metal oxide semiconductors, which are highlighted by thermal and chemical stability, by the presence on their surface of free electrons and also by the possibility of being used in different morphologies. For different types of gases, certain metal oxide semiconductors are used, and ZnO is an important representative for this category of materials in the field

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30

Yang, Sheng-Hsiung. "Solution-Processed Metal Oxide Nanostructures for Carrier Transport." Nanomaterials 13, no. 8 (April 11, 2023): 1331. http://dx.doi.org/10.3390/nano13081331.

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Dadkhah, Mehran, and Jean-Marc Tulliani. "Green Synthesis of Metal Oxides Semiconductors for Gas Sensing Applications." Sensors 22, no. 13 (June 21, 2022): 4669. http://dx.doi.org/10.3390/s22134669.

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During recent decades, metal oxide semiconductors (MOS) have sparked more attention in various applications and industries due to their excellent sensing characteristics, thermal stability, abundance, and ease of synthesis. They are reliable and accurate for measuring and monitoring environmentally important toxic gases, such as NO2, NO, N2O, H2S, CO, NH3, CH4, SO2, and CO2. Compared to other sensing technologies, MOS sensors are lightweight, relatively inexpensive, robust, and have high material sensitivity with fast response times. Green nanotechnology is a developing branch of nanotechnolog

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32

Stewart, Anthony D., Brent P. Gila, Cammy R. Abernathy, and S. J. Pearton. "Growth of (Sm_xGa_1−x)₂O₃ by molecular beam epitaxy." Journal of Vacuum Science & Technology A 40, no. 6 (December 2022): 062701. http://dx.doi.org/10.1116/6.0002135.

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The (SmxGa1−x)2O3 alloy system is a potential new dielectric for compound semiconductors such as GaAs. Using molecular beam epitaxy under metal-modulated growth conditions, we grew the binary oxide, Sm2O3, at two substrate temperatures (100 and 500 °C) and optimized the structural, morphological, and electrical properties of the films. Decreasing the Sm cell temperature suppressed the formation of the monoclinic phase and promoted the growth of the cubic phase. Next, the ternary oxide, (SmxGa1−x)2O3, was deposited to investigate the effects of Ga incorporation. Optimization experiments were us

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Kaneko, Kentaro, Yoshito Ito, Takayuki Uchida, and Shizuo Fujita. "Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors." Applied Physics Express 8, no. 9 (September 1, 2015): 095503. http://dx.doi.org/10.7567/apex.8.095503.

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Park, Myeongjin, Jeongkyun Roh, Jaehoon Lim, Hyunkoo Lee, and Donggu Lee. "Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes." Nanomaterials 10, no. 4 (April 11, 2020): 726. http://dx.doi.org/10.3390/nano10040726.

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The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO2) bilayer stacks. The employmen

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35

Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of

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36

Dadkhah, Mehran, and Jean-Marc Tulliani. "Nanostructured Metal Oxide Semiconductors towards Greenhouse Gas Detection." Chemosensors 10, no. 2 (January 30, 2022): 57. http://dx.doi.org/10.3390/chemosensors10020057.

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Climate change and global warming are two huge current threats due to continuous anthropogenic emissions of greenhouse gases (GHGs) in the Earth’s atmosphere. Accurate measurements and reliable quantifications of GHG emissions in air are thus of primary importance to the study of climate change and for taking mitigation actions. Therefore, the detection of GHGs should be the first step when trying to reduce their concentration in the environment. Throughout recent decades, nanostructured metal oxide semiconductors have been found to be reliable and accurate for the detection of many different

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Wang, Yucheng, Yuming Zhang, Tiqiang Pang, Jie Xu, Ziyang Hu, Yuejin Zhu, Xiaoyan Tang, Suzhen Luan, and Renxu Jia. "Ionic behavior of organic–inorganic metal halide perovskite based metal-oxide-semiconductor capacitors." Physical Chemistry Chemical Physics 19, no. 20 (2017): 13002–9. http://dx.doi.org/10.1039/c7cp01799e.

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38

Shen, Yinfeng, Yiping Liu, Chao Fan, Qudong Wang, Ming Li, Zhi Yang, and Liming Gao. "Enhanced Acetone Sensing Properties Based on Au-Pd Decorated ZnO Nanorod Gas Sensor." Sensors 24, no. 7 (March 26, 2024): 2110. http://dx.doi.org/10.3390/s24072110.

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The mature processes of metal oxide semiconductors (MOS) have attracted considerable interest. However, the low sensitivity of metal oxide semiconductor gas sensors is still challenging, and constrains its practical applications. Bimetallic nanoparticles are of interest owing to their excellent catalytic properties. This excellent feature of bimetallic nanoparticles can solve the problems existing in MOS gas sensors, such as the low response, high operating temperature and slow response time. To enhance acetone sensing performance, we successfully synthesized Au-Pd/ZnO nanorods. In this work,

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39

Xu, Kang, Yi Wang, Yuda Zhao, and Yang Chai. "Modulation doping of transition metal dichalcogenide/oxide heterostructures." Journal of Materials Chemistry C 5, no. 2 (2017): 376–81. http://dx.doi.org/10.1039/c6tc04640a.

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Lačević, Amela, and Edina Vranić. "Different digital imaging techniques in dental practice." Bosnian Journal of Basic Medical Sciences 4, no. 2 (May 20, 2004): 37–40. http://dx.doi.org/10.17305/bjbms.2004.3412.

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Different imaging techniques are used to pick up the signal of interest in digital sensors, including charge-coupled devices (CCD), complementary metal-oxide semiconductors (CMOS), photostimulable phosphors plates (PSP) and tuned-aperture computed tomography (TACT) Digital radiography sensors are divided into: storage phosphor plates (SPP) called photostimulable phosphor plates (PSP), silicon devices such as charge-coupled devices (CCD) or complementary metal oxide semiconductors (CMOS).Relatively new type of imaging that may hold advantage over current radiographic modalities is tuned-apertur

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41

Convertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, and Lukas Czornomaz. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities." Materials 12, no. 1 (December 27, 2018): 87. http://dx.doi.org/10.3390/ma12010087.

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III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selectiv

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42

Zhang, Xuan, and Sung Woon Cho. "Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors." Micromachines 14, no. 10 (September 27, 2023): 1839. http://dx.doi.org/10.3390/mi14101839.

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In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used in the BCWE process cause unintended performance degradation of oxide semiconductors, making it difficult to implement oxide TFT circuits through industrial-scale metallization processes. Herein, we propose composition engineering of oxide semiconductors to enhance the chemical durability and electr

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43

Sendi, Aymen, Philippe Menini, Myrtil L. Kahn, Katia Fajerwerg, and Pierre Fau. "Effect of Nanostructured Octahedral SnO2 Added with a Binary Mixture P-Type and N-Type Metal Oxide on CO Detection." Proceedings 2, no. 13 (December 3, 2018): 986. http://dx.doi.org/10.3390/proceedings2130986.

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In this work, we study the effect of nanostructured octahedral SnO2 added with a binary mixture p-type and n-type metal oxide semiconductors of CuO and ZnO, on CO detection at two concentrations (100 ppm and 1000 ppm). These metal oxides (SnO2 and binary mixture of CuO75%/ZnO25%) are prepared in the form of a serigraphy paste and deposited on an optimized silicon micro-hotplate. The sensors can be operated at temperature of 550 °C with a low energy consumption of only 55 mW. The binary and ternary mixtures of metal oxide are operated at different working temperature to optimize their sensitivi

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44

Tutov, E. A., S. V. Ryabtsev, E. E. Tutov, and E. N. Bormontov. "Silicon MOS structures with nonstoichiometric metal-oxide semiconductors." Technical Physics 51, no. 12 (December 2006): 1604–7. http://dx.doi.org/10.1134/s1063784206120097.

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45

Hossein-Babaei, Faramarz, Saeed Masoumi, and Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors." Measurement Science and Technology 28, no. 11 (October 12, 2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

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46

CAROTTA, M., V. GUIDI, G. MARTINELLI, M. NAGLIATI, D. PUZZOVIO, and D. VECCHI. "Sensing of volatile alkanes by metal-oxide semiconductors." Sensors and Actuators B: Chemical 130, no. 1 (March 14, 2008): 497–501. http://dx.doi.org/10.1016/j.snb.2007.09.053.

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47

Zhou, Xinran, Xiaowei Cheng, Yongheng Zhu, Ahmed A. Elzatahry, Abdulaziz Alghamdi, Yonghui Deng, and Dongyuan Zhao. "Ordered porous metal oxide semiconductors for gas sensing." Chinese Chemical Letters 29, no. 3 (March 2018): 405–16. http://dx.doi.org/10.1016/j.cclet.2017.06.021.

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48

Hamers, Robert J., Scott A. Chambers, Paul E. Evans, Ryan Franking, Zachary Gerbec, Padma Gopalan, Heesuk Kim, et al. "Molecular and biomolecular interfaces to metal oxide semiconductors." physica status solidi (c) 7, no. 2 (February 2010): 200–205. http://dx.doi.org/10.1002/pssc.200982472.

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49

Sun, Dongjin, Yifan Luo, Marc Debliquy, and Chao Zhang. "Graphene-enhanced metal oxide gas sensors at room temperature: a review." Beilstein Journal of Nanotechnology 9 (November 9, 2018): 2832–44. http://dx.doi.org/10.3762/bjnano.9.264.

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Owing to the excellent sensitivity to gases, metal-oxide semiconductors (MOS) are widely used as materials for gas sensing. Usually, MOS gas sensors have some common shortages, such as relatively poor selectivity and high operating temperature. Graphene has drawn much attention as a gas sensing material in recent years because it can even work at room temperature, which reduces power consumption. However, the low sensitivity and long recovery time of the graphene-based sensors limit its further development. The combination of metal-oxide semiconductors and graphene may significantly improve th

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50

Hultquist, Gunnar, C. Anghel, and P. Szakàlos. "Effects of Hydrogen on the Corrosion Resistance of Metallic Materials and Semiconductors." Materials Science Forum 522-523 (August 2006): 139–46. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.139.

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For long time it is known that protons in aqueous solutions have a detrimental effect on metallic materials. Relatively recently, it has also been observed in aqueous solution that the pitting corrosion resistance of Cr, stainless steel 304 and 310 decreases and the anodic dissolution rate increases due to the presence of hydrogen in the metal. In gas phase a high oxidation rate has been observed for hydrogen containing Cr and Fe. Hydrogen in the substrate can also enhance the oxidation of Fe in SS 316 and As in GaAs. All these results suggest enhanced dissolution in aqueous solution and enhan

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