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Artículos de revistas sobre el tema "Pe(ald)"

Autor: Grafiati
Publicado: 12 de octubre de 2024
Última modificación: 31 de julio de 2025

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1

Onaya, Takashi, and Koji Kita. "(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors." ECS Transactions 113, no. 2 (2024): 51–59. http://dx.doi.org/10.1149/11302.0051ecst.

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We fabricated 400°C-annealed TiN/HfxZr1−xO2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H2O and O2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. T
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2

Haeberle, Jörg, Karsten Henkel, Hassan Gargouri, et al. "Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films." Beilstein Journal of Nanotechnology 4 (November 8, 2013): 732–42. http://dx.doi.org/10.3762/bjnano.4.83.

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We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD p
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3

Van Daele, Michiel, Christophe Detavernier, and Jolien Dendooven. "Surface species during ALD of platinum observed with in situ reflection IR spectroscopy." Physical Chemistry Chemical Physics 20, no. 39 (2018): 25343–56. http://dx.doi.org/10.1039/c8cp03585g.

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Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe<sub>3</sub> as the precursor and O<sub>2</sub> gas or O<sub>2</sub> plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.
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4

Mione, M. A., V. Vandalon, W. M. M. Kessels, and F. Roozeboom. "Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 062407. http://dx.doi.org/10.1116/6.0002158.

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Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al2O3 using trimethylaluminum [TMA, Al(CH3)3] and Ar–O2 plasma within the temperature range of 80–200 °
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5

Do Nascimento, Cleonilde Maria, Alex José de Melo Silva, Jéssica Paula Lucena, et al. "Epidemiological profile of the main prevalent liver diseases in Brazil Northeast and possible impacts associated with the COVID-19 pandemic." Cuadernos de Educación y Desarrollo 15, no. 12 (2023): 16916–41. http://dx.doi.org/10.55905/cuadv15n12-096.

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Liver diseases especially hepatitis, alcoholic liver disease (ALD), and cancer are among the main causes of morbidity-mortality worldwide. Here, we analyzed data on hospital admissions, prevalence and mortality rates due to ALD, liver cancer, viral hepatitis and schistosomiasis in northeastern Brazil between 2000-2020, and investigate possible impacts caused by the COVID-19 pandemic in these data. In this period, Pernambuco (PE) and Bahia (BA) stood out for the growth in admissions for ALD: 707.2% and 177.3%, respectively; Paraiba (PB), Ceará (CE), and Alagoas (AL) showed the highest prevalenc
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6

Roy, Amit K., Jolien Dendooven, Davy Deduytsche, et al. "Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene." Chemical Communications 51, no. 17 (2015): 3556–58. http://dx.doi.org/10.1039/c4cc09474c.

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7

Gebhard, M., F. Mitschker, M. Wiesing, et al. "An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor." Journal of Materials Chemistry C 4, no. 5 (2016): 1057–65. http://dx.doi.org/10.1039/c5tc03385c.

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8

Karbalaei Akbari, Mohammad, Nasrin Siraj Lopa, and Serge Zhuiykov. "Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions." Coatings 13, no. 6 (2023): 1041. http://dx.doi.org/10.3390/coatings13061041.

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Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O3 is an ultra-wide bandgap metal oxide semiconductor for application in electronic devices. The polymorphous Ga2O3 with its unique electronic characteristics and doping capabilities is a functional option for heterointerface engineering at metal-semiconductor 2D heterojunctions for
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9

Dobbelaere, Thomas, Felix Mattelaer, Amit Kumar Roy, Philippe Vereecken, and Christophe Detavernier. "Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries." Journal of Materials Chemistry A 5, no. 1 (2017): 330–38. http://dx.doi.org/10.1039/c6ta04179e.

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10

Park, Yongju, Woonyoung Lee, Yongkook Choi, Hyunkyu Lee, and Jinseong Park. "Characteristics of Tin Oxide Thin Films Deposited by PE-ALD." Korean Journal of Materials Research 14, no. 12 (2004): 840–45. http://dx.doi.org/10.3740/mrsk.2004.14.12.840.

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11

Lee, W., K. Hong, Y. Park, N. H. Kim, Y. Choi, and J. Park. "Surface and sensing properties of PE-ALD SnO2 thin film." Electronics Letters 41, no. 8 (2005): 475. http://dx.doi.org/10.1049/el:20058174.

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12

Gudovskikh, Alexander S., Alexander V. Uvarov, Ivan A. Morozov, et al. "Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD." physica status solidi (a) 216, no. 10 (2018): 1800617. http://dx.doi.org/10.1002/pssa.201800617.

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13

Xiao, Zhigang, Kim Kisslinger, and Rebhadevi Monikandan. "Atomic Layer Deposition of Nanolayered Carbon Films." C 7, no. 4 (2021): 67. http://dx.doi.org/10.3390/c7040067.

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In this paper, carbon thin films were grown using the plasma-enhanced atomic layer deposition (PE-ALD). Methane (CH4) was used as the carbon precursor to grow the carbon thin film. The grown film was analyzed by the high-resolution transmission electron micrograph (TEM), X-ray photoelectron spectroscopy (XPS) analysis, and Raman spectrum analysis. The analyses show that the PE-ALD-grown carbon film has an amorphous structure. It was found that the existence of defective sites (nanoscale holes or cracks) on the substrate of copper foil could facilitate the formation of nanolayered carbon films.
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14

Fang, Guo-Yong, Li-Na Xu, Yan-Qiang Cao, Lai-Guo Wang, Di Wu, and Ai-Dong Li. "Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2." Chemical Communications 51, no. 7 (2015): 1341–44. http://dx.doi.org/10.1039/c4cc08004a.

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15

Kim, Myoungsub, Youngjun Kim, Minkyu Lee, et al. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications." Journal of Materials Chemistry C 9, no. 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.

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Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems.
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16

Baranov, A. I., A. S. Gudovskikh, A. Darga, S. Le Gall, and J.-P. Kleider. "Capacitance characterization of GaP/n-Si structures grown by PE-ALD." Journal of Physics: Conference Series 917 (November 2017): 052027. http://dx.doi.org/10.1088/1742-6596/917/5/052027.

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17

Baranov, Artem I., Alexander S. Gudovskikh, Dmitriy A. Kudryashov, et al. "Influence of PE-ALD of GaP on the Silicon Wafers Quality." physica status solidi (a) 214, no. 12 (2017): 1700685. http://dx.doi.org/10.1002/pssa.201700685.

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18

Schilirò, Emanuela, Salvatore di Franco, Patrick Fiorenza, et al. "Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC." Materials Science Forum 858 (May 2016): 685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.858.685.

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This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C&lt;em&gt;urrent density-Electric Field&lt;/em&gt; me
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19

Wei, Wenlu, Baojun Yan, Yuekun Heng, et al. "Secondary electron emission characteristics of alumina coating on metallic substrate prepared by atomic layer deposition." Journal of Instrumentation 18, no. 02 (2023): P02002. http://dx.doi.org/10.1088/1748-0221/18/02/p02002.

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Abstract The main objective of this study is to research the secondary electron emission characteristic of different thickness alumina coatings which are prepared by atomic layer deposition (ALD) technique on several metallic secondary-emitting materials. The experimental results reveal that secondary electron yield (SEY) property concerned with the metal work function and the surface topography of alumina coatings when coating thickness is in the nanometer level. In addition, after utilizing SEY measurement setup and pulsed electron gun, the SEY curves of metallic substrates with different th
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20

Lee, Si Young, Julia D. Lenef, Kalyn M. Fuelling, et al. "Atomic Layer Deposition of Cu Catalysts on Gas Diffusion Electrodes for Electrochemical CO2 Reduction." ECS Meeting Abstracts MA2024-01, no. 37 (2024): 2198. http://dx.doi.org/10.1149/ma2024-01372198mtgabs.

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Electrochemical CO2 conversion is gaining attention as an important process for carbon fixation through the use of renewable electricity to address the climate change crisis. Copper is a unique single-element catalyst that can induce C-C coupling reactions to generate high-value-added compounds. The triple phase boundary has been successfully controlled at the catalyst interface using gas diffusion electrodes (GDEs) over the past few years, resulting in high C-C coupling performance. Therefore, methods to engineer the catalyst interface on the 3D structure of GDE are of significant importance.
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21

Perrotta, Alberto, Julian Pilz, Stefan Pachmajer, Antonella Milella, and Anna Maria Coclite. "On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition." Beilstein Journal of Nanotechnology 10 (March 21, 2019): 746–59. http://dx.doi.org/10.3762/bjnano.10.74.

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The synthesis of nanoporous ZnO thin films is achieved through annealing of zinc-alkoxide (“zincone”-like) layers obtained by plasma-enhanced atomic layer deposition (PE-ALD). The zincone-like layers are deposited through sub-saturated PE-ALD adopting diethylzinc and O2 plasma with doses below self-limiting values. Nanoporous ZnO thin films were subsequently obtained by calcination of the zincone-like layers between 100–600 °C. Spectroscopic ellipsometry (SE) and X-ray diffraction (XRD) were adopted in situ during calcination to investigate the removal of carbon impurities, development of cont
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22

Perrotta, Alberto, Julian Pilz, Roland Resel, Oliver Werzer, and Anna Maria Coclite. "Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO." Crystals 10, no. 4 (2020): 291. http://dx.doi.org/10.3390/cryst10040291.

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Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a combination of spectroscopic ellipsometry and X-ray based techniques (diffraction, reflectivity, and fluorescence). Differently from the growth mode usually reported for thermal ALD ZnO (i.e., substrate-inhibited island growth), the effect of plasma surface activation resulted in a substrate-enhanced island growth. A transient region of acceler
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23

Dallaev, Rashid. "Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods." Vacuum 193 (November 2021): 110533. http://dx.doi.org/10.1016/j.vacuum.2021.110533.

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24

Gudovskikh, A. S., A. V. Uvarov, I. A. Morozov, et al. "Si doped GaP layers grown on Si wafers by low temperature PE-ALD." Journal of Renewable and Sustainable Energy 10, no. 2 (2018): 021001. http://dx.doi.org/10.1063/1.5000256.

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25

Prapaipong, Chanitda, Dheerawan Boonyawan, Chanchai Umongno, Supab Choopun, and Pipat Ruankham. "A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer." Materials Today: Proceedings 17 (2019): 1521–30. http://dx.doi.org/10.1016/j.matpr.2019.06.177.

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26

Simon, Nicolai, Maria Asplund, Thomas Stieglitz, and Volker Bucher. "Plasma Enhanced Atomic Layer Deposition of Iridium Oxide for Application in Miniaturized Neural Implants." Current Directions in Biomedical Engineering 7, no. 2 (2021): 539–42. http://dx.doi.org/10.1515/cdbme-2021-2137.

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Abstract High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical impedance, superior charge injection capacity, corrosion resistance, longevity, and electrochemical stability. Plasma enhanced atomic layer deposition (PE-ALD) and a suitable precursor, like (Methylcyclopentadienyl) (1,5- cyclooctadiene) iridium, could be a promising technique to produce highly conformal and performant IrOx-films at low tempe
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27

D'Acunto, Giulio, Sanzeeda Baig Shuchi, Xueli Zheng, Yi Cui, and Stacey F. Bent. "ALD with Enhanced Nucleation on Polymeric Separator for Improved Li-S Batteries." ECS Meeting Abstracts MA2024-01, no. 1 (2024): 110. http://dx.doi.org/10.1149/ma2024-011110mtgabs.

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Lithium-sulfur (Li-S) batteries, known for their exceptional energy densities, are at the forefront of the next generation of energy storage systems. However, their practical application is hindered by the polysulfide shuttle effect, which significantly impairs discharge capacity and cycling stability. This research introduces a novel solution to these challenges through the use of atomic layer deposition (ALD) of Al₂O₃ on commercial polypropylene/polyethylene/polypropylene (PP/PE/PP) separators. ALD is a thin-film deposition technique that allows for precise control of layer thickness and com
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28

Jin, Jidong, Jiawei Zhang, Andrew Shaw, et al. "A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density." Journal of Physics D: Applied Physics 51, no. 6 (2018): 065102. http://dx.doi.org/10.1088/1361-6463/aaa4a2.

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29

Kim, Myoungsub, Youngjun Kim, Inkyu Sohn, and Hyungjun Kim. "Growth and Electrical Characteristics of PE-ALD Germanium Sulfide for 3D Cross-Point Memory." ECS Meeting Abstracts MA2020-02, no. 23 (2020): 1686. http://dx.doi.org/10.1149/ma2020-02231686mtgabs.

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30

Xiao, Zhigang, Kim Kisslinger, Sam Chance, and Samuel Banks. "Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials." Crystals 10, no. 2 (2020): 136. http://dx.doi.org/10.3390/cryst10020136.

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We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffracti
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31

Yalcin, Emine B., Ming Tong, Camilla Homans, and Suzanne M. de la Monte. "Myriocin Treatment Reverses Alcohol-Induced Alterations in Polyunsaturated Fatty Acid-Containing Phospholipid Expression in the Liver." Nutrition and Metabolic Insights 15 (January 2022): 117863882210820. http://dx.doi.org/10.1177/11786388221082012.

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Chronic heavy alcohol exposure causes steatohepatitis manifested by abnormal intra-hepatocyte accumulation of lipid and parenchymal inflammation. Attendant alterations in polyunsaturated fatty acid (PUFA)-containing phospholipids could cause alcoholic liver disease (ALD) to progress by promoting oxidative stress, inflammation, and fibrogenesis. Previously we showed that myriocin, a serine palmitoyltransferase inhibitor, ameliorates experimental alcohol-induced steatohepatitis. However, the surprising overall therapeutic responses suggested that myriocin’s targets may go beyond sphingolipids. T
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32

Mitschker, F., S. Steves, M. Gebhard, et al. "Influence of PE-CVD and PE-ALD on defect formation in permeation barrier films on PET and correlation to atomic oxygen fluence." Journal of Physics D: Applied Physics 50, no. 23 (2017): 235201. http://dx.doi.org/10.1088/1361-6463/aa6e28.

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33

Hur, Jae Seok, Min Jae Kim, Seong Hun Yoon, and Jae Kyeong Jeong. "P‐154: Late‐News Poster: High‐Performance Indium‐Gallium Oxide Thin‐Film‐Transistors via Plasma‐Enhanced Atomic‐Layer‐Deposition." SID Symposium Digest of Technical Papers 54, no. 1 (2023): 1826–28. http://dx.doi.org/10.1002/sdtp.16962.

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We report the fabrication of high‐performance indium‐gallium oxide (IGO) thin‐film transistors (TFTs) via plasma‐enhanced atomic‐layer‐deposition (PE‐ALD) process with cation composition ratio variation. With accurate control of the composition ratio, IGO(12:3) TFTs showed stable characteristics along with high field‐effect mobility (μFET) of 70.69 cm 2 /Vs. Furthermore by increasing the gallium ratio, IGO(6:3) TFTs showed extremely stable characteristics with threshold voltage (VTH) variations lower than 0.1 V in both positive bias stress (PBS) and negative bias stress (NBS) conditions.
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34

Hoppe, Christian, Felix Mitschker, Lukas Mai, et al. "Influence of surface activation on the microporosity of PE‐CVD and PE‐ALD SiO x thin films on PDMS." Plasma Processes and Polymers 19, no. 4 (2022): 2100174. http://dx.doi.org/10.1002/ppap.202100174.

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35

Djara, Vladimir, Lukas Czornomaz, Veeresh Deshpande, et al. "Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal." Solid-State Electronics 115 (January 2016): 103–8. http://dx.doi.org/10.1016/j.sse.2015.08.018.

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36

Barreca, Davide, Giorgio Carraro, Michael E. A. Warwick, et al. "Fe2O3–TiO2nanosystems by a hybrid PE-CVD/ALD approach: controllable synthesis, growth mechanism, and photocatalytic properties." CrystEngComm 17, no. 32 (2015): 6219–26. http://dx.doi.org/10.1039/c5ce00883b.

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37

Liu, Ji, and Michael Nolan. "Modeling the Atomic Layer Deposition of Metal Thin Films: Studying the Surface Reaction Mechanism By Density Functional Theory Simulations." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1499. http://dx.doi.org/10.1149/ma2023-02291499mtgabs.

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Atomic layer deposition (ALD) is widely used in microelectronics and semiconductor industry to deposit thin films as part of device fabrication in nano- or subnano-dimensions. The key advantages of ALD are the conformality and precise thickness control at the atomic scale, which are difficult for physical or traditional chemical vapor deposition methods. The atomic scale understanding of ALD is vital and essential to design and optimize the deposition process, where density functional theory (DFT) calculations play an important role in providing detailed reaction mechanism, theoretical screeni
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38

Gudovskikh, A. S., A. I. Baranov, A. V. Uvarov, D. A. Kudryashov, and J.-P. Kleider. "Space charge capacitance study of GaP/Si multilayer structures grown by plasma deposition." Journal of Physics D: Applied Physics 55, no. 13 (2021): 135103. http://dx.doi.org/10.1088/1361-6463/ac41fa.

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Abstract Microcrystalline gallium phosphide (GaP)/Si multilayer structures grown on GaP substrates using combination of plasma enhanced atomic layer deposition (PE-ALD) for GaP and plasma-enhanced chemical vapor deposition for Si layers deposition are studied by three main space charge capacitance techniques: capacitance versus voltage (C-V) profiling, admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS), which have been used on Schottky barriers formed on the GaP/Si multilayer structures. C-V profiling qualitatively demonstrates an electron accumulation in the Si/GaP well
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39

Jeong, Heon Jun, Hyun Soo Park, Keun Hee Kim, et al. "Performance Improvement of Proton Ceramic Fuel Cells through Surface Treatment of Cobalt Oxide Nanoparticles on Perovskite Oxide." ECS Transactions 111, no. 6 (2023): 2155–60. http://dx.doi.org/10.1149/11106.2155ecst.

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This study reports on the performance improvement of a protonic ceramic fuel cell (PCFC) after a CoOx nanoparticle treatment has been applied to a PrBa0.5Sr0.5Co2-xFexO5+δ(PBSCF) cathode with a perovskite structure. CoOx nanoparticles are deposited on the sintered PBSCF surface using a plasma-enhanced (PE) atomic layer deposition (ALD) process, thereby avoiding any unwanted reactions or phase changes. The CoOx nanoparticles are successfully deposited uniformly onto the entire surface of the porous and complex cathode structure. A constant deposition rate is observed because of the self-limitin
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40

Baranov, A. I., A. V. Uvarov, D. A. Kudryashov, I. A. Morozov, and A. S. Gudovskikh. "Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD." Journal of Physics: Conference Series 1482 (March 2020): 012017. http://dx.doi.org/10.1088/1742-6596/1482/1/012017.

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41

Castillo-Saenz, Jhonathan, Nicola Nedev, Benjamín Valdez-Salas, et al. "Properties of Al2O3 Thin Films Grown by PE-ALD at Low Temperature Using H2O and O2 Plasma Oxidants." Coatings 11, no. 10 (2021): 1266. http://dx.doi.org/10.3390/coatings11101266.

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Al2O3 layers with thicknesses in the 25–120 nm range were deposited by plasma enhanced atomic layer deposition at 70 °C. Trimethylaluminum was used as organometallic precursor, O2 and H2O as oxidant agents and Ar as a purge gas. The deposition cycle consisted of 50 ms TMA pulse/10 s purge time/6 s of plasma oxidation at 200 W/10 s purge time. The optical constants and thicknesses of the grown layers were determined by spectroscopic ellipsometry, while the roughness was measured by atomic force microscopy, giving RMS values in the 0.29–0.32 nm range for films deposited under different condition
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42

Choi, Gwangpyo, L. Satyanarayana, and Jinseong Park. "Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing." Applied Surface Science 252, no. 22 (2006): 7878–83. http://dx.doi.org/10.1016/j.apsusc.2005.09.069.

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43

Shen, Jie, Fred Roozeboom, and Alfredo Mameli. "Atmospheric-pressure plasma-enhanced spatial atomic layer deposition of silicon nitride at low temperature." Atomic Layer Deposition 1 (March 27, 2023): 1–11. http://dx.doi.org/10.3897/aldj.1.101651.

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Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall cycle time on layer composition was investigated. In particular, the oxygen content was found to decrease with decreasing both above-mentioned parameters. As measured by depth profile X-ray photoelectron spectroscopy, 4.7 at.% was the lowest oxygen content
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44

Song, Hohyun, Sanghun Seo, and Hongyoung Chang. "Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature." Current Applied Physics 18, no. 11 (2018): 1436–40. http://dx.doi.org/10.1016/j.cap.2018.08.012.

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45

Starostin, Sergey A., Wytze Keuning, Jean-Paul Schalken, et al. "Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers." Plasma Processes and Polymers 13, no. 3 (2015): 311–15. http://dx.doi.org/10.1002/ppap.201500096.

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46

Shen, Jie, Fred Roozeboom, and Alfredo Mameli. "Atmospheric-pressure plasma-enhanced spatial atomic layer deposition of silicon nitride at low temperature." Atomic Layer Deposition 1 (March 27, 2023): 1–11. https://doi.org/10.3897/aldj.1.101651.

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Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiN<sub>x</sub> is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N<sub>2</sub> plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N<sub>2</sub> plasma exposure time and overall cycle time on layer composition was investigated. In particular, the oxygen content was found to decrease with decreasing both above-mentioned parameters. As measured by depth profile X-ray photoelectron spectroscopy, 4.7 at
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47

Hansen, Katherine, Melissa Cardona, Amartya Dutta, and Chen Yang. "Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3." Materials 13, no. 5 (2020): 1058. http://dx.doi.org/10.3390/ma13051058.

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Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si &lt;100&gt; substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates
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48

Wu, Chien-Hung, Kow-Ming Chang, Sung-Hung Huang, et al. "Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric." IEEE Electron Device Letters 33, no. 4 (2012): 552–54. http://dx.doi.org/10.1109/led.2012.2185774.

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49

Lee, Baek-Ju, Dong-Won Seo, and Jae-Wook Choi. "A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System." Coatings 13, no. 1 (2022): 48. http://dx.doi.org/10.3390/coatings13010048.

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This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/deposition) method was developed in this study. After the etch step, an Ar/O2 (1:2) plasma treatment technology reduced the residual amount of F in the films to 0.05%. By improving the etch uniformity, the deposition uniformity after the DED process on a 12-inch flat wafer was secured within &lt;1%, and a high-quality SiO2 thin film with a dielectric co
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50

Kull, Mikk, Helle-Mai Piirsoo, Aivar Tarre, Hugo Mändar, Aile Tamm, and Taivo Jõgiaas. "Hardness, Modulus, and Refractive Index of Plasma-Assisted Atomic-Layer-Deposited Hafnium Oxide Thin Films Doped with Aluminum Oxide." Nanomaterials 13, no. 10 (2023): 1607. http://dx.doi.org/10.3390/nano13101607.

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Coatings with tunable refractive index and high mechanical resilience are useful in optical systems. In this work, thin films of HfO2 doped with Al2O3 were deposited on silicon at 300 °C by using plasma-enhanced atomic layer deposition (PE-ALD). The mainly amorphous 60–80 nm thick films consisted Al in the range of 2 to 26 at. %. The refractive indexes varied from 1.69 to 2.08 at the wavelength of 632 nm, and they consistently depended on the composition. The differences were higher in the UV spectral region. At the same time, the hardness of the films was from 12–15 GPa; the modulus was in th
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