Bibliografías temáticas / Schmitt Trigger

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Literatura académica sobre el tema "Schmitt Trigger"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 12 de febrero de 2022

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Artículos de revistas sobre el tema "Schmitt Trigger"

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Vidhyadharan, Abhay Sanjay y Sanjay Vidhyadharan. "Improved hetero-junction TFET-based Schmitt trigger designs for ultra-low-voltage VLSI applications". World Journal of Engineering 18, n.º 5 (26 de marzo de 2021): 750–59. http://dx.doi.org/10.1108/wje-08-2020-0367.

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Purpose Tunnel field effect transistors (TFETs) have significantly steeper sub-threshold slope (24–30 mv/decade), as compared with the conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), which have a sub-threshold slope of 60 mv/decade at room temperature. The steep sub-threshold slope of TFETs enables a much faster switching, making TFETs a better option than MOSFETs for low-voltage VLSI applications. The purpose of this paper is to present a novel hetero-junction TFET-based Schmitt triggers, which outperform the conventional complementary metal oxide semiconductor (CMOS) Schmitt triggers at low power supply voltage levels. Design/methodology/approach The conventional Schmitt trigger has been implemented with both MOSFETs and HTFETs for operation at a low-voltage level of 0.4 V and a target hysteresis width of 100 mV. Simulation results have indicated that the HTFET-based Schmitt trigger not only has significantly lower delays but also consumes lesser power as compared to the CMOS-based Schmitt trigger. The limitations of the conventional Schmitt trigger design have been analysed, and improved CMOS and CMOS–HTFET hybrid Schmitt trigger designs have been presented. Findings The conventional Schmitt trigger implemented with HTFETs has 99.9% lower propagation delay (29ps) and 41.2% lesser power requirement (4.7 nW) than the analogous CMOS Schmitt trigger, which has a delay of 36 ns and consumes 8 nW of power. An improved Schmitt trigger design has been proposed which has a transistor count of only six as compared to the eight transistors required in the conventional design. The proposed improved Schmitt trigger design, when implemented with only CMOS devices enable a reduction of power delay product (PDP) by 98.4% with respect to the CMOS conventional Schmitt trigger design. The proposed CMOS–HTFET hybrid Schmitt trigger further helps in decreasing the delay of the improved CMOS-only Schmitt trigger by 70% and PDP by 21%. Originality/value The unique advantage of very steep sub-threshold slope of HTFETs has been used to improve the performance of the conventional Schmitt trigger circuit. Novel CMOS-only and CMOS–HTFET hybrid improved Schmitt trigger designs have been proposed which requires lesser number of transistors (saving 70% chip area) for implementation and has significantly lower delays and power requirement than the conventional designs.
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Filanovsky, I. M. y H. Baltes. "CMOS Schmitt trigger design". IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 41, n.º 1 (1994): 46–49. http://dx.doi.org/10.1109/81.260219.

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Ramkumar, K. y K. Nagaraj. "A ternary Schmitt trigger". IEEE Transactions on Circuits and Systems 32, n.º 7 (julio de 1985): 732–35. http://dx.doi.org/10.1109/tcs.1985.1085779.

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Steyaert, M. y W. Sansen. "Novel CMOS Schmitt trigger". Electronics Letters 22, n.º 4 (1986): 203. http://dx.doi.org/10.1049/el:19860142.

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Kumar, Umesh. "Measurements and Analytical Computer-Based Study of CMOS Inverters and Schmitt Triggers". Active and Passive Electronic Components 19, n.º 1 (1996): 41–54. http://dx.doi.org/10.1155/1996/52421.

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Modified CMOS inverters with three and four transistors have been made. Two varieties of CMOS Schmitt Triggers have been considered. CMOS Schmitt Trigger with wide hysteresis has been obtained. Complete detailed theoretical, experimental and computer based results are derived and exhibited.
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Wang, C. S., S. Y. Yuan y S. Y. Kuo. "Full-swing BiCMOS Schmitt trigger". IEE Proceedings - Circuits, Devices and Systems 144, n.º 5 (1997): 303. http://dx.doi.org/10.1049/ip-cds:19971142.

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Wang, Z. y W. Guggenbohl. "Novel CMOS current Schmitt trigger". Electronics Letters 24, n.º 24 (1988): 1514. http://dx.doi.org/10.1049/el:19881034.

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Al-Sarawi, S. F. "Low power Schmitt trigger circuit". Electronics Letters 38, n.º 18 (2002): 1009. http://dx.doi.org/10.1049/el:20020687.

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AlAhdal, A. y C. Toumazou. "ISFET-based chemical Schmitt trigger". Electronics Letters 48, n.º 10 (2012): 549. http://dx.doi.org/10.1049/el.2011.3781.

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Bastan, Yasin y Parviz Amiri. "A Digital-Based Ultra-Low-Voltage Pseudo-Differential CMOS Schmitt Trigger". Journal of Circuits, Systems and Computers 29, n.º 04 (26 de junio de 2019): 2020002. http://dx.doi.org/10.1142/s0218126620200029.

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A digital-based Pseudo-differential Schmitt trigger is proposed in this paper which is suitable for ultra-low voltages and pure digital integrated circuit technologies. The proposed Schmitt trigger is implemented according to the design procedure of an analog Schmitt trigger and only using digital CMOS inverters. It is composed of a differential comparator consisting of two CMOS inverters and a cross-coupled inverter pair positive feedback which has simultaneously two outputs of noninverting and inverting. The proposed circuit is the only digital Schmitt trigger which operates in differential mode and its hysteresis center can be changed by the input voltage. Implementing the circuit in digital-based allows the proposed Schmitt trigger to operate in 0.4[Formula: see text]V ultra-low-voltage. Principle operation of the proposed circuit is discussed theoretically and using formulas and its performance is verified by simulation in TSMC 0.18[Formula: see text][Formula: see text]m CMOS process. The proposed circuit occupies only [Formula: see text][Formula: see text][Formula: see text]m2 chip area due to the very low number of transistors. The hysteresis width of the proposed Schmitt trigger is 205[Formula: see text]mV and consumes only 6.64[Formula: see text]nW power.
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Tesis sobre el tema "Schmitt Trigger"

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Prodanov, William. "Um comparador de corrente Schmitt-Trigger digitalmente programável". Florianópolis, SC, 2002. http://repositorio.ufsc.br/xmlui/handle/123456789/83532.

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Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.
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Apresentação de uma nova estrutura para um comparador de corrente Schmitt-trigger compatível com sistemas de baixa tensão de alimentação. A principal virtude é a fácil programabilidade digital do laço de histerese, laço este que é a principal figura de mérito de um comparador desta natureza. O comparador de corrente é composto por diversas células básicas tais como amplificador operacional, comparador de tensão, redes divisoras de corrente e portas lógicas XOR. Cada uma destas células é apresentada individualmente com a finalidade de destacar influências no comportamento geral do comparador de corrente. Para a comprovação da funcionalidade da estrutura são apresentadas simulações computacionais, bem como testes de bancadas em chips protótipos que foram integrados em tecnologia CMOS de 0.8?m, com alimentação de $3,3V$. O comparador de corrente implementado é inteiramente compatível com tecnologias VLSI (Very Large Scale Integration). Como exemplo de utilização do comparador de corrente, é apresentado um gerador de sinal digitalmente programável com simulações computacionais que demonstram o funcionamento do gerador.
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Melek, Luiz Alberto Pasini. "Analysis and design of a subthreshold CMOS Schmitt trigger circuit". reponame:Repositório Institucional da UFSC, 2017. https://repositorio.ufsc.br/xmlui/handle/123456789/183242.

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Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2017.
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Nesta tese, o disparador Schmitt (ou Schmitt trigger) CMOS clássico (ST) operando em inversão fraca é analisado. A transferência de tensão DC completa é determinada, incluindo expressões analíticas para as tensões dos nós internos. A transferência de tensão DC resultante do ST apresenta um comportamento contínuo mesmo na presença da histerese. Nesse caso, a característica da tensão de saída entre os limites da histerese é formada por um segmento metaestável, que pode ser explicado em termos das resistências negativas dos subcircuitos NMOS e PMOS do ST. A tensão mínima para o aparecimento da histerese é determinada fazendo-se a análise de pequenos sinais. A análise de pequenos sinais também é utilizada para a estimativa da largura do laço de histerese. É mostrado que a histerese não aparece para tensões de alimentação menores que 75 mV em 300 K. A análise do ST operando como amplificador também foi feita. A razão ótima dos transistores foi determinada com o objetivo de se maximizar o ganho de tensão. A comparação do disparador Schmitt com o inversor CMOS convencional destaca as vantagens e desvantagens de cada um para aplicações de ultra-baixa tensão. Também é mostrado que o ST é teoricamente capaz de operar (com ganho de tensão absoluto ?1) com uma tensão de alimentação tão baixa quanto 31.5 mV, a qual é menor do que o conhecido limite prévio de 36 mV, para o inversor convencional. Como amplificador, o ST possui ganho de tensão absoluto consideravelmente maior que o inversor convencional na mesma tensão de alimentação. Três circuitos integrados foram projetados e fabricados para estudar o comportamento do ST com tensões de alimentação entre 50 mV e 1000 mV.
Abstract : In this thesis, the classical CMOS Schmitt trigger (ST) operating in weak inversion is analyzed. The complete DC voltage transfer characteristic is determined, including analytical expressions for the internal node voltage. The resulting voltage transfer characteristic of the ST presents a continuous output behavior even when hysteresis is present. In this case, the output voltage characteristic between the hysteresis limits is formed by a metastable segment, which can be explained in terms of the negative resistance of the NMOS and PMOS subcircuits of the ST. The minimum supply voltage at which hysteresis appears is determined carrying out small-signal analysis, which is also used to estimate the hysteresis width. It is shown that hysteresis does not appear for supply voltages lower than 75 mV at 300 K. The analysis of the ST operating as a voltage amplifier was also carried out. Optimum transistor ratios were determined aiming at voltage gain maximization. The comparison of the ST with the standard CMOS inverter highlights the relative benefits and drawbacks of each one in ULV applications. It is also shown that the ST is theoretically capable of operating (voltage gain ?1) at a supply voltage as low as 31.5 mV, which is lower than the well-known limit of 36 mV, for the standard CMOS inverter. As an amplifier, the ST shows considerable higher absolute voltage gains than those showed by the conventional inverter at the same supply voltages. Three test chips were designed and fabricated to study the operation of the ST at supply voltages between 50 mV and 1000 mV.
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Namala, Praneeth. "A 13T Single-Ended Low Power SRAM Using Schmitt-Trigger and Write-Assist". Wright State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=wright1504191949021882.

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Maruf, Md Hasan. "An Input Amplifier for Body-Channel Communication". Thesis, Linköpings universitet, Elektroniksystem, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-89878.

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Body-channel communication (BCC) is based on the principle of electrical field data transmission attributable to capacitive coupling through the human body. It is gaining importance now a day in the scenario of human centric communication because it truly offers a natural means of interaction with the human body. Traditionally, near field communication (NFC) considers as a magnetic field coupling based on radio frequency identification (RFID) technology. The RFID technology also limits the definition of NFC and thus reduces the scope of a wide range of applications. In recent years BCC, after its first origin in 1995, regain importance with its valuable application in biomedical systems. Primarily, KAIST and Philips research groups demonstrate BCC in the context of biomedical remote patient health monitoring system. BCC transceiver mainly consists of two parts: one is digital baseband and the other is an analog front end (AFE). In this thesis, an analog front end receiver has presented to support the overall BCC. The receiver (Rx) architecture consists of cascaded preamplifier and Schmitt trigger. When the signals are coming from the human body, they are attenuated around 60 dB and gives weak signals in the range of mV. A high gain preamplifier stage needs to amplify these weak signals and make them as strong signals. The preamplifier single stage needs to cascade for the gain requirement. The single stage preamplifier, which is designed with ST65 nm technology, has an open loop gain of 24.01 dB and close loop gain of 19.43 dB. A flipped voltage follower (FVF) topology is used for designing this preamplifier to support the low supply voltage of 1 V because the topology supports low voltage, low noise and also low power consumption. The input-referred noise is 8.69 nV/sqrt(Hz) and the SNR at the input are 73.26 dB. The Schmitt trigger (comparator with hysteresis) is a bistable positive feedback circuit. It builds around two stage OTA with lead frequency compensation. The DC gain for this OTA is 26.94 dB with 1 V supply voltage. The corner analyzes and eye diagram as a performance matrix for the overall receiver are also included in this thesis work.
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Ayed, Alshammari Marji. "DESIGN OF HIGHER-ORDER ALL OPTICAL BINARY DELTA-SIGMA MODULATOR USING RING LASER". OpenSIUC, 2018. https://opensiuc.lib.siu.edu/dissertations/1619.

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The aim of this research is to investigate the performance of a bi-stable device using a single active element and to design a higher order all optical binary delta-sigma modulator (BΔΣM). A Delta sigma modulator has two important components that require enhancement to achieve robust modulation. The first component is the integrator which accumulates the error and at the same time leaks it. Here, the integrator is a single ring laser consisting of a semiconductor optical amplifier (SOA) and a filter to allow the light frequency of interest into the ring. The other component is the bi-stable device (called Schmitt trigger) that switches either ON (1) or OFF (0). There are different novel approaches to developing a bi-stable circuit. First, the coupled two ring lasers where each ring suppresses each other. Second, a novel idea that considered as a bi-stable device with single active element to achieve reduced power and reduce cost. This type of circuit is merged ring lasers with using single SOA. This system is modeled and its bistability hysteretic characteristics is investigated. The first bi-stable device is used to construct an all optical BΔΣM with 1st, 2nd and 3rd -order approaches. It performs better when the SOA bulk device is replaced by multi-quantum well (MQW) SOA.
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Schmitt, Sebastian [Verfasser] y André [Akademischer Betreuer] Schöning. "Measurement of the Inclusive pp->Z/gamma*->e+e- Cross Section at sqrt(s) = 7 TeV with the ATLAS Experiment and Design Studies for a First Level Track Trigger for the ATLAS Trigger Upgrade at the future High Luminosity LHC / Sebastian Schmitt ; Betreuer: André Schöning". Heidelberg : Universitätsbibliothek Heidelberg, 2013. http://d-nb.info/1177382881/34.

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Schmidt, Adrian [Verfasser] y J. [Akademischer Betreuer] Blümer. "Realization of a Self-triggered Detector for the Radio Emission of Cosmic Rays / Adrian Schmidt. Betreuer: J. Blümer". Karlsruhe : KIT-Bibliothek, 2011. http://d-nb.info/1028567111/34.

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Lauffer, Felix [Verfasser], Kilian G. [Akademischer Betreuer] Eyerich, Tilo [Gutachter] Biedermann y Carsten [Gutachter] Schmidt-Weber. "Exogenous and endogenous triggers of distinct reactions of skin immunity in inflammatory skin diseases / Felix Lauffer ; Gutachter: Tilo Biedermann, Carsten Schmidt-Weber ; Betreuer: Kilian G. Eyerich". München : Universitätsbibliothek der TU München, 2018. http://d-nb.info/1172415099/34.

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Schmidts, Ines [Verfasser] y Klaus [Akademischer Betreuer] Förstemann. "Biogenesis and biological function of double-strand break triggered small interfering RNAs in Drosophila melanogaster / Ines Schmidts ; Betreuer: Klaus Förstemann". München : Universitätsbibliothek der Ludwig-Maximilians-Universität, 2017. http://d-nb.info/1148276300/34.

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Liao, Jian-Tang y 廖健棠. "Low-Power Feed-Forward CMOS Schmitt Trigger Circuits". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/48032557402464356996.

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碩士
雲林科技大學
電子與資訊工程研究所
96
This thesis proposed new high-performance CMOS Schmitt trigger circuit structures employing feed-forward technique, and improved the propagation delay, power dissipation, and even the design effort from traditional feedback structures. Our new feed-forward circuit structure has two main parts: the diode-connect MOS transistors provide a high and fixed trigger voltage, and the asymmetrical CMOS inverters set up the fine tuning trigger voltage. In addition, by using the multi-threshold voltage IC technology, our new Schmitt circuit can be easily designed in high, normal, and low hysteresis voltage without circuit sizing. Simulation and comparison results are made under TSMC 0.18μm 1.8V process, and two trigger voltages are set as (VDD - VDD/4) and VDD/4 (1.35V and 0.45V). All circuits are designed in 500MHz operating frequency, and the outputs loads are set as 20fF. Simulation results show that new proposed non-inversion and inversion Schmitt trigger circuits save 15% to 64% and 6% to 54% power, respectively, when comparing with traditional circuits. Moreover, without feedback, design our new Schmitt becomes more straightforward.
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Capítulos de libros sobre el tema "Schmitt Trigger"

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Craig, Edwin C. "Schmitt Trigger Circuits". En Laboratory Manual for Electronics via Waveform Analysis, 99–104. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4612-2610-9_18.

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Hülse, Martin y Frank Pasemann. "Dynamical Neural Schmitt Trigger for Robot Control". En Artificial Neural Networks — ICANN 2002, 783–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-46084-5_127.

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Moraes, Leonardo B., Alexandra Lackmann Zimpeck, Cristina Meinhardt y Ricardo Reis. "Robust FinFET Schmitt Trigger Designs for Low Power Applications". En IFIP Advances in Information and Communication Technology, 45–68. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-53273-4_3.

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Kumar, Abhishek y Ravi Shankar Mishra. "Challenge-Response Pair (CRP) Generator Using Schmitt Trigger Physical Unclonable Function". En Advanced Computing and Communication Technologies, 213–23. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0680-8_20.

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Anushree, Mathur, Kumawat Mrinalini, Sharma Jyoti y Avireni Srinivasulu. "A Schmitt Trigger by Means of a Voltage Differencing Transconductance Amplifier". En Advances in Smart Grid Automation and Industry 4.0, 527–34. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-7675-1_52.

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Cheng, Li, Decheng Lou, Ming Yan y Ning Yang. "Novel 0.15 μm BiCMOS A/D Optoelectronic Converter with Schmitt Trigger Circuit". En Advanced Electrical and Electronics Engineering, 533–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-19712-3_68.

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Banerjee, Subhasish, Eshita Sarkar y Sagar Mukherjee. "Effect of intrinsic and extrinsic device parameter variations on Schmitt trigger circuit". En Computational Science and Engineering, 15–18. CRC Press/Balkema, P.O. Box 11320, 2301 EH Leiden, The Netherlands, e-mail: Pub.NL@taylorandfrancis.com, www.crcpress.com – www.taylorandfrancis.com: CRC Press, 2016. http://dx.doi.org/10.1201/9781315375021-5.

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Nikitha, L., N. S. Bhargavi y B. S. Kariyappa. "Design and Development of Non-volatile Multi-threshold Schmitt Trigger SRAM Cell". En Lecture Notes in Electrical Engineering, 877–84. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-5802-9_76.

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Sharma, Jyoti, Ritambhara y Avireni Srinivasulu. "A Novel CNFET-Based CCCDTA and Its Application as a Schmitt Trigger". En Advances in Smart Grid Automation and Industry 4.0, 93–101. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-7675-1_9.

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Sharma, Pawan, Saurabh Khandelwal y Shyam Akashe. "Modeling and Analysis of FinFET Based Schmitt Trigger with Stability Response and Gain-Bandwidth Product". En Springer Proceedings in Physics, 255–61. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2367-2_32.

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Actas de conferencias sobre el tema "Schmitt Trigger"

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Sapawi, R., R. L. S. Chee, S. K. Sahari y N. Julai. "Performance of CMOS Schmitt Trigger". En 2008 International Conference on Computer and Communication Engineering (ICCCE). IEEE, 2008. http://dx.doi.org/10.1109/iccce.2008.4580818.

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Singhanath, Pratchayaporn, Apirak Suadet, Arnon Kanjanop, Thawatchai Thongleam, Sanya Kuankid y Varakorn Kasemsuwan. "Low voltage adjustable CMOS Schmitt trigger". En 2011 Fourth International Conference on Modeling, Simulation and Applied Optimization (ICMSAO). IEEE, 2011. http://dx.doi.org/10.1109/icmsao.2011.5775531.

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Ibrahim, Walid, Valeriu Beiu, Mihai Tache y Fekri Kharbash. "On Schmitt trigger and other inverters". En 2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS). IEEE, 2013. http://dx.doi.org/10.1109/icecs.2013.6815337.

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Beiu, Valeriu y Mihai Tache. "On using Schmitt trigger for digital logic". En 2015 International Semiconductor Conference (CAS). IEEE, 2015. http://dx.doi.org/10.1109/smicnd.2015.7355206.

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Steininger, Andreas, Jurgen Maier y Robert Najvirt. "The Metastable Behavior of a Schmitt-Trigger". En 2016 22nd IEEE International Symposium on Asynchronous Circuits and Systems (ASYNC). IEEE, 2016. http://dx.doi.org/10.1109/async.2016.19.

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Beiu, Valeriu, Walid Ibrahim, Mihai Tache y Fekri Kharbash. "When one should consider Schmitt trigger gates". En 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388698.

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Adithi, R., Soumya Dambal y Kirti S. Pande. "NMOS Only Schmitt Trigger Based SRAM Cell". En 2019 3rd International conference on Electronics, Communication and Aerospace Technology (ICECA). IEEE, 2019. http://dx.doi.org/10.1109/iceca.2019.8821802.

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Moraes, L. B., A. L. Zimpeck, C. Meinhardt y R. Reis. "Exploring Schmitt Trigger Circuits for Process Variability Mitigation". En 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS). IEEE, 2019. http://dx.doi.org/10.1109/newcas44328.2019.8961235.

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Zhige Zou, Xuecheng Zou, Dingbin Liao, Fan Guo, Jianming Lei y Xiaofei Chen. "A novel schmitt trigger with low temperature coeficient". En APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS). IEEE, 2008. http://dx.doi.org/10.1109/apccas.2008.4746291.

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Hang, Guoqiang, Yonghui Liao, Yang Yang, Danyan Zhang y Xiaohui Hu. "Neuron-MOS Based Schmitt Trigger with Controllable Hysteresis". En 2012 Eighth International Conference on Computational Intelligence and Security (CIS). IEEE, 2012. http://dx.doi.org/10.1109/cis.2012.52.

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