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Artículos de revistas sobre el tema "XPS/ARPES"

Autor: Grafiati
Publicado: 9 de noviembre de 2024
Última modificación: 31 de julio de 2025

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1

Ostler, Markus, Roland J. Koch, Florian Speck, et al. "Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation." Materials Science Forum 717-720 (May 2012): 649–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.649.

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Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC interface is a well studied topic since successful intercalation has been shown for hydrogen [1-3]. Recently, intercalation was also shown for oxygen [4, 5]. We present ARPES, XPS and Raman spectroscopy studies to determine the quality of oxygen intercalated buffer layer samples in terms of decoupling and integrity of the transformed graphene layer. The decou
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2

Chaluvadi, Sandeep, Debashis Mondal, Chiara Bigi, et al. "Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser." Coatings 11, no. 3 (2021): 276. http://dx.doi.org/10.3390/coatings11030276.

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Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunnelling microscopy (STM), synchrotron radiation X-ray photoelectron spectros
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3

Ozawa, Kenichi, Yoshihiro Aiura, Daisuke Wakabayashi, et al. "Beamline commissioning for microscopic measurements with ultraviolet and soft X-ray beam at the upgraded beamline BL-13B of the Photon Factory." Journal of Synchrotron Radiation 29, no. 2 (2022): 400–408. http://dx.doi.org/10.1107/s160057752200090x.

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Beamline 13 of the Photon Factory has been in operation since 2010 as a vacuum ultraviolet and soft X-ray undulator beamline for X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and angle-resolved photoelectron spectroscopy (ARPES) experiments. The beamline and the end-station at branch B have been recently upgraded, enabling microscopic XPS, XAS, and ARPES measurements to be performed. In 2015, a planar undulator insertion device was replaced with an APPLE-II (advanced planar polarized light emitter II) undulator. This replacement allows use of linear, circular, an
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4

Johansson, Leif I., Somsakul Watcharinyanon, Alexei A. Zakharov, Rositza Yakimova, and Chariya Virojanadara. "The Registry of Graphene Layers Grown on SiC(000-1)." Materials Science Forum 717-720 (May 2012): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.613.

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Graphene samples were grown on the C-face of SiC, at high temperature in a furnace and an Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formation of fairly large grains (crystallographic domains) of graphene exhibiting sharp 1x1 patterns in m-LEED was revealed and that different grains showed different azimuthal orientations. Selective area constant initial energy photoelectron angular distribution patterns recorded showed the same results, ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few mm was obtained on some samples.
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5

Maier, F., R. Graupner, M. Hollering, L. Hammer, J. Ristein, and L. Ley. "The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study." Surface Science 443, no. 3 (1999): 177–85. http://dx.doi.org/10.1016/s0039-6028(99)01010-9.

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6

Hollering, M., J. Bernhardt, J. Schardt, et al. "Electronic and atomic structure of the6H−SiC(0001¯)surface studied by ARPES, LEED, and XPS." Physical Review B 58, no. 8 (1998): 4992–5000. http://dx.doi.org/10.1103/physrevb.58.4992.

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7

Emtsev, Konstantin V., Thomas Seyller, Florian Speck, et al. "Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy." Materials Science Forum 556-557 (September 2007): 525–28. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.525.

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Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temp
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8

Rybkina, Anna A., Alevtina A. Gogina, Artem V. Tarasov, et al. "Origin of Giant Rashba Effect in Graphene on Pt/SiC." Symmetry 15, no. 11 (2023): 2052. http://dx.doi.org/10.3390/sym15112052.

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Intercalation of noble metals can produce giant Rashba-type spin–orbit splittings in graphene. The spin–orbit splitting of more than 100 meV has yet to be achieved in graphene on metal or semiconductor substrates. Here, we report the p-type graphene obtained by Pt intercalation of zero-layer graphene on SiC substrate. The spin splitting of ∼200 meV was observed at a wide range of binding energies. Comparing the results of theoretical studies of different models with the experimental ones measured by spin-ARPES, XPS and STM methods, we concluded that inducing giant spin–orbit splitting requires
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9

Hung, Nguyen Van. "Contributions to Developments of Photoelectron Spectroscopy and X-ray Absorption Fine Structure Applied to Materials Studies." Communications in Physics 31, no. 2 (2021): 113. http://dx.doi.org/10.15625/0868-3166/15826.

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This work reviews the contributions of author to the developments and applications of Photoelectron Spectroscopy (PES) and X-ray Absorption Fine Structure (XAFS) to materials studies. Focusing on Angle resolved PES (ARPES) the energy distribution is discussed for angle-resolved photoemission from valence bands of single crystals. The important influence of the spectrometer angle of acceptance on the results of X-ray PES (XPS) is investigated in detail. The Plane Density of States (PDOS) is introduced as a new property of the electronic structure. Most meaningful contributions to XAFS consist o
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10

Villarreal, Renan. "(Invited, Digital Presentation) Single-Atom Quantum Magnetism in 2D Materials." ECS Meeting Abstracts MA2022-01, no. 12 (2022): 874. http://dx.doi.org/10.1149/ma2022-0112874mtgabs.

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With the advent of 2D materials, the playground to study spins in dilute and non-dilute phases has expanded. This is appealing for utilizing the additional degrees of freedom of electron systems such as spin and valley and, from the fundamental point of view, to better understand atomic scale magnetic phenomena in low dimensional materials. Dilute magnetism in 2D materials can lead to complex magnetic phenomena (e.g., Kondo effect, RKKY-interactions, quantum relaxation and coherence), with potential for applications in spintronics (e.g., spin FETs) and quantum technologies (e.g., single-atom q
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11

Rubano, Andrea, and Domenico Paparo. "Optical Second Harmonic Generation on LaAlO3/SrTiO3 Interfaces: A Review." Materials 16, no. 12 (2023): 4337. http://dx.doi.org/10.3390/ma16124337.

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As we approach the limits of semiconductor technology, the development of new materials and technologies for the new era in electronics is compelling. Among others, perovskite oxide hetero-structures are anticipated to be the best candidates. As in the case of semiconductors, the interface between two given materials can have, and often has, very different properties, compared to the corresponding bulk compounds. Perovskite oxides show spectacular interfacial properties due to the the rearrangement of charges, spins, orbitals and the lattice structure itself, at the interface. Lanthanum alumin
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12

Xenogiannopoulou, Evangelia, Dimitra Tsoutsou, Polychronis Tsipas, et al. "Ultrathin epitaxial Bi film growth on 2D HfTe2 template." Nanotechnology 33, no. 1 (2021): 015701. https://doi.org/10.5281/zenodo.5720132.

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Among ultrathin monoelemental two-dimensional (2D) materials, bismuthene, the single layer of heavier group-VΑ element bismuth (Bi), has been predicted to have large non trivial gap. Here, we demonstrate the growth of Bi films by molecular beam epitaxy on 2D-HfTe2 template. At the initial stage of Bi deposition (1–2 bilayers, BL), both the pseudocubic Bi(110) and the hexagonal Bi(111) phases are formed. When reaching 3 BL Bi, a transformation to pure hexagonal Bi(111) occurs. The electronic band structure of 3 BL Bi(111) films was measured by angle-resolved photoemission spectrosco
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13

Das, Shuvankar, Arunava Kar, Subrata Paul, and Krishnakumar S. R. Menon. "Growth and characterization of Ag layers on Mo(110) using LEED, XPS and ARPES." Indian Journal of Physics, April 25, 2025. https://doi.org/10.1007/s12648-025-03605-0.

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Abstract Epitaxial ultra-thin film systems present unique properties distinct from their bulk counterparts, influenced by strain, morphology, defects, and substrate conditions. The Ag/Mo(110) system, where silver adopts a face-centred cubic (fcc) structure on a body-centred cubic (bcc) substrate, is an interesting system for studying as it forms twin Ag(111) planes with their lattice parameters varying depending on the thickness of the silver layer. This study investigates the properties of a 30 monolayer silver film epitaxially grown on Mo(110) surface at room temperature utilizing low energy
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14

Guerim Vieira, Clóvis, Matheus F. S. Barbosa, Rosa M. C. Marques, et al. "Atomic and electronic structure of vicinal Ag(977) surface." Journal of Physics: Condensed Matter, March 14, 2025. https://doi.org/10.1088/1361-648x/adc0d8.

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Abstract We conducted a detailed experimental investigation of the Ag(977) vicinal surface, a high Miller index surface derived from the (111) surface. The sample surface was prepared using standard methodology and its quality was examined by XPS, LEED, and STM. I(V)-LEED analysis was used to determine the surface structure focusing the intricate relaxation dynamics expected for this surface. Our LEED analysis revealed an inward relaxation for the step chain (SC) atoms, whereas the corner atoms (CC) relaxed outwards. To gain more information on the obtained relaxations, we also performed densi
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15

Stania, Roland, Ari Paavo Seitsonen, Hyunjin Jung, et al. "Correlation of Work Function and Conformation of C80 Endofullerenes on h‐BN/Ni(111)." Advanced Materials Interfaces, January 11, 2024. http://dx.doi.org/10.1002/admi.202300935.

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AbstractChange of conformation or polarization of molecules is an expression of their functionality. If the two correlate, electric fields can change the conformation. In the case of endofullerene single‐molecule magnets the conformation is linked to an electric and a magnetic dipole moment, and therefore magnetoelectric effects are envisoned. The interface system of one monolayer Sc2TbN@C80 on hexagonal boron nitride (h‐BN) on Ni(111) has been studied. The molecular layer is hexagonally close packedbut incommensurate. With photoemission the polarization and the conformation of the molecules a
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16

Cameau, Mathis, Natalia Olszowska, Marcin Rosmus, et al. "Synthesis and characterisation of Cu2Ge, a new two-dimensional Dirac nodal line semimetal." 2D Materials, May 3, 2024. http://dx.doi.org/10.1088/2053-1583/ad471e.

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Abstract Dirac nodal line semimetals are a novel class of topological materials in which the valence and conduction bands touch along lines in the reciprocal space, with linear dispersion. These materials attract a growing attention, but the experimental realizations for two-dimensional systems are sparse. We report here the first experimental realization of a two-dimensional hexagonal monolayer
Cu2Ge, grown by evaporation of Ge on a Cu(111) substrate. Through a combination of LEED, XPS and ARPES measurements, we show that the surface presents all characteristics expected from calculat
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17

Lev, L. L., V. N. Strocov, Y. Y. Lebedinskii, T. Schmitt, and A. V. Zenkevich. "Band bending and k -resolved band offsets at the HfO2/n+(p+)Si interfaces explored with synchrotron-radiation ARPES/XPS." Physical Review Materials 6, no. 8 (2022). http://dx.doi.org/10.1103/physrevmaterials.6.084605.

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18

Göhler, Fabian, Philip Schädlich, Niels Rösch, Mike Zeißig, and Thomas Seyller. "Transfer doping of epitaxial graphene on SiC(0001) using Cs." 2D Materials, January 23, 2024. http://dx.doi.org/10.1088/2053-1583/ad2192.

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Abstract Control of the charge carrier concentration is essential for applications of graphene. Here, we demonstrate the doping of epitaxial graphene on SiC(0001) via charge transfer from an adsorbed layer of Cs atoms with sub-monolayer coverage. The electronic structure of the graphene is analyzed using X-ray and angle-resolved photoelectron spectroscopy (XPS, ARPES). In H-intercalated, quasi-freestanding monolayer graphene (QFMLG), the Dirac point can be tuned continuously from p-type to strong n-type doping. For strong n-type doping, analysis of the core level binding energies implies a dev
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19

Zhu Meng-Long, Yang Jun, Dong Yu-Lan, et al. "Atomic and electronic structure of monolayer ferroelectric GeS on Cu(111)." Acta Physica Sinica, 2024, 0. http://dx.doi.org/10.7498/aps.73.20231246.

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Two dimensional ferroelectric materials are interesting for both fundamental properties and potential applications. Especially, Group IV monochalcogenides possess highest thermoelectric performance and intrinsic ferroelectric polarization properties and can sever as a model to explore ferroelectric polarization properties. However, due to the relatively large exfoliation energy, the creation of high-quality and large-size monolayer group IV monochalcogenides is not easy, which seriously hinders the integration of these materials into the fast-developing field of 2D materials and their heterost
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