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Littérature scientifique sur le sujet « Atomic defect »

Auteur : Grafiati

Publié le 9 mars 2023

Mis à jour le 31 juillet 2025

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Articles de revues sur le sujet "Atomic defect"

Chu, Liu, Jiajia Shi, and Eduardo Souza de Cursi. "The Fingerprints of Resonant Frequency for Atomic Vacancy Defect Identification in Graphene." Nanomaterials 11, no. 12 (2021): 3451. http://dx.doi.org/10.3390/nano11123451.

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The identification of atomic vacancy defects in graphene is an important and challenging issue, which involves inhomogeneous spatial randomness and requires high experimental conditions. In this paper, the fingerprints of resonant frequency for atomic vacancy defect identification are provided, based on the database of massive samples. Every possible atomic vacancy defect in the graphene lattice is considered and computed by the finite element model in sequence. Based on the sample database, the histograms of resonant frequency are provided to compare the probability density distributions and

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Sozykin, Sergey Anatolevich, Valeriy Petrovich Beskachko, and G. P. Vyatkin. "Atomic Structure and Mechanical Properties of Defective Carbon Nanotube (7,7)." Materials Science Forum 843 (February 2016): 78–84. http://dx.doi.org/10.4028/www.scientific.net/msf.843.78.

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The article presents the results of first-principle modeling of a defectless (7,7) carbon nanotube and (7,7) nanotubes containing single and double vacancy defects, as well as Stone–Wales defects. These types of defects are often found in real nanotubes and affect their properties. We have established that reliable results can be obtained by using models of more than 1.5 nm in length. It turned out that a single vacancy defect has the least influence on Young modulus, and double n type vacancy defect in the most influential. The elongation at break also depends on the defect type and is 30-60%

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Jones, Jessica Catharine, and Alex B. F. Martinson. "Site-Selective Atomic Layer Deposition at TiO₂ Defects Via Targeted Dehydration." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2221. https://doi.org/10.1149/ma2024-02302221mtgabs.

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Minority atomic arrangement (i.e. defects) on surfaces exhibit distinct reactivity which allows for selective surface chemistry exclusively at those sites. We present an atomic layer deposition (ALD)-based technique of site-selective ALD (SS-ALD) targeting undesirable defect sites. Defects on the TiO2 and other oxidized surfaces affect the electronic properties, interfaces, and performance of optoelectronic devices utilizing those interfaces. We present first principles calculations to predict the difference in hydration/hydroxylation of pristine TiO2 terraces and minority atomic configuration

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Schuler, Bruno, Katherine A. Cochrane, Christoph Kastl, et al. "Electrically driven photon emission from individual atomic defects in monolayer WS2." Science Advances 6, no. 38 (2020): eabb5988. http://dx.doi.org/10.1126/sciadv.abb5988.

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Quantum dot–like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS2 bandgap. Coupling to the optical far fi

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Weber, William J., Fei Gao, Ram Devanathan, Weilin Jiang, and Y. Zhang. "Defects and Ion-Solid Interactions in Silicon Carbide." Materials Science Forum 475-479 (January 2005): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1345.

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Atomic-level simulations are used to determine defect production, cascade-overlap effects, and defect migration energies in SiC. Energetic C and Si collision cascades primarily produce single interstitials, mono-vacancies, antisite defects, and small defect clusters, while amorphous clusters are produced within 25% of Au cascades. Cascade overlap results in defect stimulated cluster growth that drives the amorphization process. The good agreement of disordering behavior and changes in volume and elastic modulus obtained computationally and experimentally provides atomic-level interpretation of

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Kim, Honggyu, Yifei Meng, Ji-Hwan Kwon, Jean-Luc Rouviére, and Jian Min Zuo. "Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain." IUCrJ 5, no. 1 (2018): 67–72. http://dx.doi.org/10.1107/s2052252517016219.

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Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice rela

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Hsu, Julia W. P. "Semiconductor Defect Studies Using Scanning Probes." Microscopy and Microanalysis 6, S2 (2000): 704–5. http://dx.doi.org/10.1017/s1431927600036011.

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Understanding how defects alter physical properties of materials has lead to improvements in materials growth as well as device performance. Transmission electron microscopy (TEM) provides an invaluable tool for structural characterization of defects. Our current knowledge of crystallographic defects, such as dislocations, would not have been possible without TEM. Recently, scanning tunneling microscopy and scanning force microscopy (SFM) have shown the capability of imaging surface defects with atomic or near-atomic resolution in topographic images. What is more important is to gain knowledge

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Stemmer, S., G. Duscher, E. M. James, M. Ceh, and N. D. Browning. "Atomic Scale Structure-Property Relationships of Defects and Interfaces in Ceramics." Microscopy and Microanalysis 4, S2 (1998): 556–57. http://dx.doi.org/10.1017/s143192760002290x.

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The evaluation of the two dimensional projected atom column positions around a defect or an interface in an electronic ceramic, as it has been performed in numerous examples by (quantitative) conventional high-resolution electron microscopy (HRTEM), is often not sufficient to relate the electronic properties of the material to the structure of the defect. Information about point defects (vacancies, impurity atoms), and chemistry or bonding changes associated with the defect or interface is also required. Such complete characterization is a necessity for atomic scale interfacial or defect engin

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Wang, Qiyu, Zehao Wang, Xiangdong Chen, and Fangwen Sun. "Detecting the vector of nanoscale light field with atomic defect." Chinese Optics Letters 21, no. 7 (2023): 071202. http://dx.doi.org/10.3788/col202321.071202.

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Rothe, Karl, Nicolas Néel, and Jörg Kröger. "Unveiling the nature of atomic defects in graphene on a metal surface." Beilstein Journal of Nanotechnology 15 (April 15, 2024): 416–25. http://dx.doi.org/10.3762/bjnano.15.37.

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Low-energy argon ion bombardment of graphene on Ir(111) induces atomic-scale defects at the surface. Using a scanning tunneling microscope, the two smallest defects appear as a depression without discernible interior structure suggesting the presence of vacancy sites in the graphene lattice. With an atomic force microscope, however, only one kind can be identified as a vacancy defect with four missing carbon atoms, while the other kind reveals an intact graphene sheet. Spatially resolved spectroscopy of the differential conductance and the measurement of total-force variations as a function of

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Thèses sur le sujet "Atomic defect"

Siegl, Manuel. "Atomic-scale investigation of point defect interactions in semiconductors." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10043636/.

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Miniaturisation of computer hardware has increased the transistor density in silicon devices significantly and is approaching the ultimate physical limit of single atom transistors. A thorough understanding of the nature of materials at the atomic scale is needed in order to increase the transistor density further and exploit more recent technology proposals. Moreover, exploring other materials with more desirable characteristics such as wide band gap semiconductors with a higher dielectric strength and optical addressability are paramount in the effort of moving to a post-silicon era. Scannin

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Valikova, Irina, and Andrei Nazarov. "Pressure effects on point defect diffusion features in cubic metals: atomic simulation." Diffusion fundamentals 6 (2007) 48, S. 1-2, 2007. https://ul.qucosa.de/id/qucosa%3A14227.

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Lee, Donghun. "Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629.

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Uppal, Hasan Javed. "Nanoscale performance, degradation and defect analysis of mos devices using high-k dielectric materials as gate stacks by atomic force microscopy." Thesis, University of Manchester, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.509394.

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Gilbert, Mark R. "BCC metals in extreme environments : modelling the structure and evolution of defects." Thesis, University of Oxford, 2010. http://ora.ox.ac.uk/objects/uuid:d972d28d-5d2d-4392-8cf5-fc5728dc74f6.

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Designing materials for fusion applications is a very challenging problem, requiring detailed understanding of the behaviour of materials under the kinds of extreme conditions expected in a fusion environment. During the lifetime of fusion-reactor components, materials will be subjected to high levels of neutron irradiation, but must still perform effectively at high operating temperatures and under significant loading conditions. Body-centred cubic (bcc) transition metals are some of the most promising candidates for structural materials in fusion because of their relatively high density, whi

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Jin, Xin. "Combining RBS/Channeling, X-ray diffraction and atomic-scale modelling to study irradiation-induced defects and microstructural changes." Thesis, Limoges, 2021. http://www.theses.fr/2021LIMO0017.

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Les particules énergétiques sont souvent impliquées dans les activités de la société moderne. Ils ont contribué à l'essor de l'industrie des semi-conducteurs et pourront à l'avenir jouer un rôle important dans la mise en forme des matériaux de manière contrôlée. Cependant, leur nature énergétique pose de grands défis. Ainsi, il est essentiel d'avoir une compréhension globale des mécanismes sous-jacents des défauts induits par l'irradiation et des changements microstructuraux associés. Expérimentalement, les effets induits par l'irradiation peuvent être suivis par des techniques de caractérisat

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CARUSO, FRANCESCO. "Study of electrical conduction and defects in high-permittivity metal oxides: experiments and simulation." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2022. http://hdl.handle.net/10281/382298.

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Inizialmente studiati dall’industria elettronica per sostituire lo strato isolante di SiO2, gli ossidi metallici sono ora ampiamente utilizzati come strati attivi o isolanti in una moltitudine di dispositivi elettronici. Le proprietà elettriche sono fortemente correlate ai difetti atomici, che generano stati elettronici localizzati all'interno del band gap che fungono da trappole di carica. La comprensione dei meccanismi fisici e del ruolo dei difetti che regolano il trasporto di carica negli ossidi metallici è pertanto della massima importanza per l'ottimizzazione dei dispositivi nanoelettron

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Bagués, Salguero Núria. "Atomic and electronic structure of self-organized defects in epitaxial films of functional perovskite-type oxides." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/405668.

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Les capes fines epitaxials d’òxids funcionals tipus perovskita (ABO3) presenten mecanismes d’acoblament d’intercara i de relaxació del desajust governats per un joc complex de graus de llibertat químics, electrònics i estructurals. Aquests mecanismes poden acomodar defectes, tals com dislocacions de desajust i parets de macla, que presenten una gran tendència a l’auto-organització amb escales característiques de desenes de nanòmetres. L’estructura de la xarxa en el nucli d’aquests defectes és diferent de la major part del material, i per tant pot ser considerat com una nano-fase amb propietats

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Khazaka, Rami. "From atomic level investigations to membrane architecture : an in-depth study of the innovative 3C-SiC/Si/3C-SiC/Si heterostructure." Thesis, Tours, 2016. http://www.theses.fr/2016TOUR4023/document.

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Le polytype cubique du carbure de silicium (3C-SiC) est un matériau très prometteur pour les applications MEMS. En plus de sa tenue mécanique et chimique, il peut être épitaxié sur des substrats Si de faible coût. De plus, l'hétéroépitaxie multiple, c’est-à-dire quand on empile plusieurs couches Si et 3C-SiC peut ouvrir des pistes pour de nouveaux dispositifs à base de 3C-SiC. Vue la complexité de développer de telles hétérostructures, nous avons procédé à l'amélioration de la qualité de chaque couche séparément. De plus, nous avons mené une étude approfondie sur la nature des défauts dans cha

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Drain, John Frederick. "Development of magnetic bond-order potentials for Mn and Fe-Mn." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:68a01493-4a20-4d78-ad4a-6c3c2fe072d6.

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While group VII 4d Tc and 5d Re have hexagonally close-packed (hcp) ground states, 3d Mn adopts the complex chi-phase which exhibits non-collinear magnetism. Density functional theory (DFT) calculations have shown that without magnetism the chi-phase remains the ground state of Mn implying that magnetism is not the critical factor, as is commonly believed, in driving the anomalous stability of the chi-phase over hcp. Using a tight-binding (TB) model it is found that while harder potentials stabilise close-packed hcp, a softer potential stabilises the more open chi-phase. By analogy with the st

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Livres sur le sujet "Atomic defect"

Snyder, Aaron. The dependence of atomic oxygen undercutting of protected polyimide Kapton® H upon defect size. National Aeronautics and Space Administration, Glenn Research Center, 2001.

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K, De Groh Kim, and NASA Glenn Research Center, eds. The dependence of atomic oxygen undercutting of protected polyimide Kapton® H upon defect size. National Aeronautics and Space Administration, Glenn Research Center, 2001.

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Ullmaier, H., ed. Atomic Defects in Metals. Springer-Verlag, 1991. http://dx.doi.org/10.1007/b37800.

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Frank-Kamenetskaya, O. V. Atomic defects and crystal structure of minerals. 2nd ed. Edited by Rozhdestvenskaya, I. V. (Ira V.) and Frank-Kamenet︠s︡kiĭ V. A. Yanus, 2004.

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Dongchuan, Wu, Old Dominion University. Research Foundation., and Langley Research Center, eds. Hyperthermal atomic oxygen generator. Old Dominion University Research Foundation, 1990.

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Janot, Christian, Winfried Petry, Dieter Richter, and Tasso Springer, eds. Atomic Transport and Defects in Metals by Neutron Scattering. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71007-0.

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Great Britain. Advisory Committee on the Safety of Nuclear Installations. An examination of the CEGB's R6 procedure for the assessment of the integrity of structures containing defects. H.M.S.O., 1989.

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Mazenko, Gene F. Fluctuations, order, and defects. J. Wiley, 2003.

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Rutledge, Sharon K. Undercutting of defects in thin film protective coatings on polymer surfaces exposed to atomic oxygen. National Aeronautics and Space Administration, 1989.

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Spaeth, Johann-Martin. Point Defects in Semiconductors and Insulators: Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions. Springer Berlin Heidelberg, 2003.

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Chapitres de livres sur le sujet "Atomic defect"

Weik, Martin H. "atomic defect absorption." In Computer Science and Communications Dictionary. Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_954.

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Baskes, M. I. "Defect and Atomic Process Simulations." In Intermetallic Compounds - Principles and Practice. John Wiley & Sons, Ltd, 2002. http://dx.doi.org/10.1002/0470845856.ch36.

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Kozubski, Rafał, Andrzej Biborski, Mirosław Kozłowski, et al. "Atomic-Migration-Controlled Processes in Intermetallics." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-55-8.113.

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Greene, Chris H. "Quantum Defect Theory." In Springer Handbook of Atomic, Molecular, and Optical Physics. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-030-73893-8_50.

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Evteev, Alexander V., Elena V. Levchenko, Irina V. Belova, and Graeme E. Murch. "Atomic Mechanism of Carbon Diffusion in Cementite." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-55-8.101.

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Li, Jun Hui, Si Zong Min, Ji An Duan, Lei Han, and Jue Zhong. "Atomic Diffusion Features in Au/Al & Al/Ni Bonding Interface." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-20-5.29.

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Shimokawa, Tomotsugu. "Atomistic Study of Disclinations in Nanostructured Metals." In The Plaston Concept. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7715-1_3.

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AbstractDisclination is a line defect in which rotational symmetry is broken. Recently, such defects have been observed in nanostructured metals. Hence, disclinations can bring out the unique properties of nanostructured metals. This chapter shows two examples of disclination-mediated plastic phenomena observed in atomic simulations. The first one is the grain subdivision mechanism, which is related to the mobility of partial disclination under severe plastic deformation processes. The second one is a mechanism that improves the fracture toughness using the disclination shielding effect, which

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Pierron-Bohnes, Veronique, R. V. P. Montsouka, Christine Goyhenex, et al. "Atomic Migration in Bulk and Thin Film L1₀ Alloys: Experiments and Molecular Dynamics Simulations." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.41.

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Gruber, W., Günter Borchardt, and Harald Schmidt. "Atomic Motion and Diffusion Mechanism of Hydrogen in Amorphous Ceramics of the System Si-B-C-N." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.63.

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Tatarenko, Valentin A., S. M. Bokoch, V. M. Nadutov, Taras M. Radchenko, and Yong Bum Park. "Semi-Empirical Parameterization of Interatomic Interactions and Kinetics of the Atomic Ordering in Ni-Fe-C Permalloys and Elinvars." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-62-0.29.

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Actes de conférences sur le sujet "Atomic defect"

Zektzer, Roy, Xiyuan Lu, Khoi Tuan Hoang, et al. "Strong interactions between integrated microresonators and alkali atomic vapors: towards single-photon-level operation." In CLEO: Fundamental Science. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_fs.2024.fw3k.5.

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We demonstrate strong coupling between an ensemble of ≈50 atoms interacting with a high-Q (>4x105) atomic-cladded microring-resonator, yielding a many-atom cooperativity C≈3.6. We further discuss photonic crystal ring defect resonator development for high single-atom-level cooperativity.

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Zhang, Shiyi, Qing Zhang, Xu Ran, Xing Wu, Yan Wang, and Chaolun Wang. "Denoising of Transmission Electron Microscopy Images for Atomic Defect Identification." In 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2024. http://dx.doi.org/10.1109/ipfa61654.2024.10691236.

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Gerasimenko, Yaroslav A., Carmen Roelcke, Lukas Z. Kastner, et al. "Ultrafast scanning tunneling spectroscopy of a phonon-driven atomic vacancy in a monolayer crystal." In CLEO: Fundamental Science. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_fs.2024.fw3b.5.

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Understanding the interplay of atomic and electronic motion requires probing at intrinsic space-time-energy scales. We resolve phonon modulations of defect-bound states by sampling electronic spectra with atomic and sub-ps precision, faster than a vibration period.

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Schröder, Tim. "Investigating atomic-scale solid-state properties with an SnV electrometer in diamond." In CLEO: Fundamental Science. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_fs.2024.ftu3i.7.

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We present an electrometer based on an optically-active spin defect in diamond with a non-linear Stark response. Using this sensor, we successfully localize charge traps, quantify their impact on transport dynamics and noise generation, analyze relevant material properties, and develop strategies for material optimization.

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Walter, Marcel, Jeremiah Croshaw, Samuel Sze Hang Ng, Konrad Walus, Robert Wolkow, and Robert Wille. "Towards Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H -Si $(100)-2\times 1$ Surface." In 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE). IEEE, 2024. http://dx.doi.org/10.23919/date58400.2024.10546683.

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Campbell, J. P., P. M. Lenahan, A. T. Krishnan, and S. Krishnan. "NBTI: An Atomic-Scale Defect Perspective." In 2006 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/relphy.2006.251259.

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Yudin, Valeriy I., and Alexey V. Taichenachev. "Mass defect effects in atomic clocks." In 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC). IEEE, 2017. http://dx.doi.org/10.1109/fcs.2017.8088813.

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Gao, F. "Atomic Modeling of Defects, Defect Generation and Multiple Ion-Solid Interactions." In APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: 17TH International Conference on the Application of Accelerators in Research and Industry. AIP, 2003. http://dx.doi.org/10.1063/1.1619782.

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Mazevet, S. "Using Quantum Defect Theory in the (e,2e) Ionization of Argon." In ATOMIC PROCESSES AND PLASMAS: 13th APS Topical Conference on Atomic Processes in Plasmas. AIP, 2002. http://dx.doi.org/10.1063/1.1516306.

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Krainov, V. P. "Barrier-Suppression Ionization of Complex Atoms and Diatomic Molecules." In Applications of High Field and Short Wavelength Sources. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/hfsw.1997.the8.

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Theory of tunneling ionization of atoms and atomic ions by strong low- frequency laser radiation was developed in Ref.[1] (so called ADK- approach). This theory is based on the conception of the quasi-stationary electromagnetoc field producing tunneling ejection of valence electrons. A complex atom or an atomic ion is considered in the frames of quantum defect method; its wave function is an asymptotic wave function at the large distances from the atomic core. In Ref.[2] the angular and energy distributions of ejected electrons in tunneling ionization were obtained.

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Rapports d'organisations sur le sujet "Atomic defect"

Diaz de la Rubia, T., N. Soneda, and Y. Shimomura. Atomic scale modeling of defect production and microstructure evolution in irradiated metals. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/543299.

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Hill, Christian. International Atomic and Molecular Code Centres Network: Database Services for Radiation Damage in Nuclear Materials. IAEA Nuclear Data Section, 2020. http://dx.doi.org/10.61092/iaea.agtk-r4gy.

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The International Code Centres Network (CCN) is a group of experts developing codes and models for atomic, molecular and plasma-surface interaction data relevant to fusion applications. Variable subsets of the group are brought together by the IAEA Atomic and Molecular Data (AMD) Unit in order to discuss computational and scientific issues associated with code developments. At the 6th Technical Meeting described in this report, 11 experts in the field of Molecular Dynamics (MD) simulations of radiation damage reviewed CascadesDB, a database of atomic configurations generated by MD simulations

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Степанюк, Олександр Миколайович, and Руслана Михайлівна Балабай. Controlling by Defects of Switching of ZnO Nanowire Array Surfaces from Hydrophobic to Hydrophilic. Вид-во Прикарпатського нац. ун-т ім. Василя Стефаника, 2023. http://dx.doi.org/10.31812/123456789/8487.

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The study investigated the wettability of polar and nonpolar ZnO nanowire surfaces, the effect of defects on the transition from hydrophobic to hydrophilic state of the surface of a ZnO nanowire array, and the atomic-level mechanisms of reversible wettability using first-principles density functional theory and pseudopotential methods.

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Hill, C. Summary Report of the 7th Biennial Technical Meeting of the Code Centres Network of the International Atomic and Molecular Code Centres Network: Database Services for Radiation Damage in Nuclear Materials. IAEA Nuclear Data Section, 2021. http://dx.doi.org/10.61092/iaea.25ex-cn8n.

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The International Code Centres Network (CCN) is a group of experts developing codes and models for atomic, molecular and plasma-surface interaction data relevant to fusion applications. Variable subsets of the group are brought together by the IAEA Atomic and Molecular Data (AMD) Unit in order to discuss computational and scientific issues associated with code developments. At the 7th Technical Meeting described in this report, which was held virtually from 18 – 20 October 2021, 18 experts in the field of Density Functional Theory (DFT) and Molecular Dynamics (MD) simulations of radiation dama

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Xin, Y., S. J. Pennycook, N. D. Browning, et al. Direct observations of atomic structures of defects in GaN by high-resolution Z-contrast STEM. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/564252.

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Liu, Hezuo, Minhui Huang, Lingjie Yang, and Xuening Li. Association between atopic dermatitis and attention deficit hyperactivity disorder in children and adolescents: A meta-analysis. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, 2024. http://dx.doi.org/10.37766/inplasy2024.6.0013.

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Wolf, R. J., and K. A. Mansour. Molecular modeling of metal hydrides: 2. Calculation of lattice defect structures and energies utilizing the Embedded Atom Method. Office of Scientific and Technical Information (OSTI), 1990. http://dx.doi.org/10.2172/6335193.

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