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Littérature scientifique sur le sujet « Crystal defect analysis »

Auteur : Grafiati
Publié le 1 décembre 2023

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Articles de revues sur le sujet "Crystal defect analysis"

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Kirste, Lutz, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik et Michal Bockowski. « Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography ». Materials 14, no 19 (22 septembre 2021) : 5472. http://dx.doi.org/10.3390/ma14195472.

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X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It was possible to trace the process and growth history of the GaN crystals in detail from their defect pattern imaged. Microscopic defects such as threading dislocations, but also macroscopic defects, for example dislocation clusters due to preparation insufficiency, traces of facet formation, growth bands, dislocation walls and dislocation bundles, were detected. Influences of seed crystal preparation and process parameters of crystal growth on the formation of the defects are discussed.
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Mohammed, M., et W. Cel. « Photonic crystal analysis for multiplexer and de-multiplexer applications ». Journal of Physics : Conference Series 2322, no 1 (1 août 2022) : 012074. http://dx.doi.org/10.1088/1742-6596/2322/1/012074.

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Abstract In our present work, we have made an investigation of several theoretical tools using the finite element method depending on the COMSOL MULTIPHYSICS program, for intuitive insight into the optical properties of the optical crystal. Analysis of the bandgap of a two-dimensional periodic photonic crystal with square lattice, evaluate the photonic band structure by the eigenfrequency of the unit cell of the first Brillouin zone. Moreover, creating defect mode inside the bandgap of photonic crystal, such as a resonant cavity, waveguide defect, narrowband filter, sharp drop filter, channel drop filter, waveguide bends, waveguide splitter promises us to a platform to design devices that includes a certain optical range of wavelengths. The transmission, as a result, the influence of the light localized in the defect area of the periodic structure of the photonic crystal. This study is important for producing photonic integrated circuits based on photonic crystals for future advanced optical communication.
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Wang, Ke, Ren Ke Kang, Zhu Ji Jin et Dong Ming Guo. « Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process ». Key Engineering Materials 364-366 (décembre 2007) : 739–44. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.739.

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MgO single crystal is mainly used as substrate for high temperature superconductor film. Surface quality of MgO substrate has significant effect on the function of high temperature superconductor film. MgO single crystal is a typical hard and brittle material, and is easily cleaved along the {100} face, so some defects are always generated on the substrate surface while lapping and polishing, which badly affects the surface quality of the substrate. In this paper, a kind of typical defect, the triangular fracture defect which is on the substrate surface after lapping and polishing, is analyzed in detail. According to the structure characteristics of the MgO single crystal, and based on the dislocation reaction theory, a formation mechanism of the triangular fracture defect in lapping and polishing processes is explored. Through the single grain scratch test in different directions on the polished surface of MgO{100} single crystal substrates, the formation mechanism of triangular fracture defect in lapping and polishing processes is verified. And during the scratch test, the plastic flow of the MgO single crystal material beside the scratch was observed.
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Larson, Bennett C. « Historical Perspective on Diffraction Line-Profile Analyses for Crystals Containing Defect Clusters ». Crystals 9, no 5 (17 mai 2019) : 257. http://dx.doi.org/10.3390/cryst9050257.

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Deviations of crystal diffraction line profiles from those predicted by the dynamical theory of diffraction for perfect crystals provide a window into the microscopic distributions of defects within non-perfect crystals. This overview provides a perspective on key theoretical, computational, and experimental developments associated with the analysis of diffraction line profiles for crystals containing statistical distributions of point defect clusters, e.g., dislocation loops, precipitates, and stacking fault tetrahedra. Pivotal theoretical developments beginning in the 1940s are recalled and discussed in terms of their impact on the direction of theoretical and experimental investigations of lattice defects in the 1960s, the 1970s, and beyond, as both experimental and computational capabilities advanced. The evolution of experimental measurements and analysis techniques, as stimulated by theoretical and computational progress in understanding the distortion fields surrounding defect clusters, is discussed. In particular, consideration is given to determining dislocation loop densities and separate size distributions for vacancy and interstitial type loops, and to the internal strain and size distributions for coherent precipitates.
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Kato, Tomohisa, Kazutoshi Kojima, Shin Ichi Nishizawa et Kazuo Arai. « Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals ». Materials Science Forum 483-485 (mai 2005) : 315–18. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.315.

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We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.
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Chikvaidze, G., N. Mironova-Ulmane, A. Plaude et O. Sergeev. « Investigation of Silicon Carbide Polytypes by Raman Spectroscopy ». Latvian Journal of Physics and Technical Sciences 51, no 3 (1 juin 2014) : 51–57. http://dx.doi.org/10.2478/lpts-2014-0019.

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Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure
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Katch, L., M. Moghaddaszadeh, C. L. Willey, A. T. Juhl, M. Nouh et A. P. Argüelles. « Analysis of geometric defects in square locally resonant phononic crystals : A comparative study of modeling approaches ». Journal of the Acoustical Society of America 154, no 5 (1 novembre 2023) : 3052–61. http://dx.doi.org/10.1121/10.0022330.

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Phononic crystals can develop defects during manufacturing that alter the desired dynamic response and bandgap behavior. This frequency behavior change can enable successful defect inspection if the characteristic defect response is known. In this study, the behavior of a defective square unit cell comprising a freed and shortened leg is studied using a wave finite element method and an approximate continuous-lumped model to elucidate the defect induced qualitative dynamical features. These metrics are a computationally inexpensive alternative to modeling a defective unit cell within a large pristine array entirely in finite elements. The accuracy of these models is validated by comparing the result to a full finite element model. The impact of a shortened unit cell leg on the behaviors of an infinite array of defective cells and a finite array with a single defect are successfully predicted through dispersion curves and frequency response functions, respectively. These methods reveal defect-induced modes that split the local resonance bandgap of the pristine cell, as well as new anti-resonances resulting from the shortened leg. The study uses both approaches to evaluate the effect of defects in complex phononic crystal geometries and provides a comparative evaluation of the results of each model.
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Nykyruy, L. I., V. V. Prokopiv, M. P. Levkun et A. V. Lysak. « Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni) ». Фізика і хімія твердого тіла 16, no 4 (15 décembre 2015) : 716–21. http://dx.doi.org/10.15330/pcss.16.4.716-721.

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The crystal-quasichemical formulae of doping at the Crystals n-ZnSе:Cо(Ni) аnd p-ZnSе:Cо(Ni) are suggested. The dependence on point defects concentration, on free chargecarrier concentration and Hall concentration of the degree of nonstoichiometry (α, β) are calculated.
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Al-Sharab, Jafar F., S. D. Tse et B. H. Kear. « Defect Analysis of Single Crystal Synthetic Diamond ». Microscopy and Microanalysis 24, S1 (août 2018) : 1766–67. http://dx.doi.org/10.1017/s1431927618009315.

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Song, Pingxin, Zhiwei Zhao, Xiaodong Xu, Peizhen Deng et Jun Xu. « Defect analysis in Czochralski-grown Yb:FAP crystal ». Journal of Crystal Growth 286, no 2 (janvier 2006) : 498–501. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.116.

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Thèses sur le sujet "Crystal defect analysis"

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Eddleston, Mark David. « Crystal form and defect analysis of pharmaceutical materials ». Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610090.

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Giannattasio, Armando. « Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals ». Thesis, University of Oxford, 2004. http://ora.ox.ac.uk/objects/uuid:41cf8568-8411-4a85-8788-7d390307c7c3.

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An experimental technique based on the immobilisation of dislocations by segregation of impurity atoms to the dislocation core (dislocation locking) has been developed and used to investigate the critical conditions for slip occurrence in Czochralski-grown and nitrogen-doped floating-zone-grown silicon crystals. The accumulation of nitrogen and oxygen impurities along a dislocation and the resulting dislocation locking effect has been investigated in silicon samples subjected to different annealing conditions. In particular, the stress needed to unlock the dislocations after their decoration by impurities has been measured as a function of annealing duration and temperature. The approach used in this study has allowed the determination of new diffusivity data for oxygen and nitrogen in silicon in the technologically important range of temperatures 350-850°C. No other data covering such wide temperature range are available in the literature. In addition to transport properties, the binding energy of an impurity atom to a dislocation in silicon has been deduced from the experimental data in the case of oxygen and nitrogen impurities. A discussion in terms of the impurity species responsible for transport (monomers or dimers) and dislocation locking is also presented. The role of oxide precipitates in the generation of glide dislocation loops and the parameters affecting the occurrence of slip have been investigated in silicon samples containing precipitates of different sizes and different morphologies. The fundamental parameters deduced in this work have been used to develop a numerical model to investigate the effect of different heat treatments on the mechanical properties of silicon wafers containing a controlled distribution of impurities. This model has then been used to simulate real wafer processing conditions during device fabrication to show how they may be modified to increase dislocation locking. It is hoped that these results will have relevance to how wafers are processed in order to minimise or eliminate dislocation multiplication and consequent warpage.
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Paturi, Naveen Kumar. « Analysis of photonic crystal defects for biosensing applications ». Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4861.

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Thesis (M.S.)--West Virginia University, 2006.
Title from document title page. Document formatted into pages; contains viii, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 55-57).
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Druet, Pierre-Etienne. « Analysis of a coupled system of partial differential equations modeling the interaction between melt flow, global heat transfer and applied magnetic fields in crystal growth ». Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät II, 2009. http://dx.doi.org/10.18452/15893.

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Hauptthema der Dissertation ist die Analysis eines nichtlinearen, gekoppelten Systems partieller Differentialgleichungen (PDG), das in der Modellierung der Kristallzüchtung aus der Schmelze mit Magnetfeldern vorkommt. Die zu beschreibenden Phenomäne sind einerseits der im elektromagnetisch geheizten Schmelzofen erfolgende Wärmetransport (Wärmeleitung, -konvektion und -strahlung), und andererseits die Bewegung der Halbleiterschmelze unter dem Einfluss der thermischen Konvektion und der angewendeten elektromagnetischen Kräfte. Das Modell besteht aus den Navier-Stokeschen Gleichungen für eine inkompressible Newtonsche Flüssigkeit, aus der Wärmeleitungsgleichung und aus der elektrotechnischen Näherung des Maxwellschen Systems. Wir erörtern die schwache Formulierung dieses PDG Systems, und wir stellen ein Anfang-Randwertproblem auf, das die Komplexität der Anwendung widerspiegelt. Die Hauptfrage unserer Untersuchung ist die Wohlgestelltheit dieses Problems, sowohl im stationären als auch im zeitabhängigen Fall. Wir zeigen die Existenz schwacher Lösungen in geometrischen Situationen, in welchen unstetige Materialeigenschaften und nichtglatte Trennfläche auftreten dürfen, und für allgemeine Daten. In der Lösung zum zeitabhängigen Problem tritt ein Defektmaß auf, das ausser der Flüssigkeit im Rand der elektrisch leitenden Materialien konzentriert bleibt. Da eine globale Abschätzung der im Strahlungshohlraum ausgestrahlten Wärme auch fehlt, rührt ein Teil dieses Defektmaßes von der nichtlokalen Strahlung her. Die Eindeutigkeit der schwachen Lösung erhalten wir nur unter verstärkten Annahmen: die Kleinheit der gegebenen elektrischen Leistung im stationären Fall, und die Regularität der Lösung im zeitabhängigen Fall. Regularitätseigenschaften wie die Beschränktheit der Temperatur werden, wenn auch nur in vereinfachten Situationen, hergeleitet: glatte Materialtrennfläche und Temperaturunabhängige Koeffiziente im Fall einer stationären Analysis, und entkoppeltes, zeitharmonisches Maxwell für das transiente Problem.
The present PhD thesis is devoted to the analysis of a coupled system of nonlinear partial differential equations (PDE), that arises in the modeling of crystal growth from the melt in magnetic fields. The phenomena described by the model are mainly the heat-transfer processes (by conduction, convection and radiation) taking place in a high-temperatures furnace heated electromagnetically, and the motion of a semiconducting melted material subject to buoyancy and applied electromagnetic forces. The model consists of the Navier-Stokes equations for a newtonian incompressible liquid, coupled to the heat equation and the low-frequency approximation of Maxwell''s equations. We propose a mathematical setting for this PDE system, we derive its weak formulation, and we formulate an (initial) boundary value problem that in the mean reflects the complexity of the real-life application. The well-posedness of this (initial) boundary value problem is the mainmatter of the investigation. We prove the existence of weak solutions allowing for general geometrical situations (discontinuous coefficients, nonsmooth material interfaces) and data, the most important requirement being only that the injected electrical power remains finite. For the time-dependent problem, a defect measure appears in the solution, which apart from the fluid remains concentrated in the boundary of the electrical conductors. In the absence of a global estimate on the radiation emitted in the cavity, a part of the defect measure is due to the nonlocal radiation effects. The uniqueness of the weak solution is obtained only under reinforced assumptions: smallness of the input power in the stationary case, and regularity of the solution in the time-dependent case. Regularity properties, such as the boundedness of temperature are also derived, but only in simplified settings: smooth interfaces and temperature-independent coefficients in the case of a stationary analysis, and, additionally for the transient problem, decoupled time-harmonic Maxwell.
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GOMES, LAERCIO. « Estudo compreensivo da fotodissociacao do ion OHsub(-) nos haletos alcalinos e sua interacao com centros de cor ». reponame:Repositório Institucional do IPEN, 1985. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9850.

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Made available in DSpace on 2014-10-09T12:32:05Z (GMT). No. of bitstreams: 0
Made available in DSpace on 2014-10-09T13:56:51Z (GMT). No. of bitstreams: 1 02301.pdf: 3265642 bytes, checksum: ef5be621c56bae7b751bf5bc812f0c07 (MD5)
Tese (Doutoramento)
IPEN/T
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
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Olivier, Ezra Jacobus. « Analysis of the extended defects in 3C-SiC ». Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/730.

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The dissertation focuses on the analysis of the extended defects present in as-grown and proton bombarded β-SiC (annealed and unannealed) grown by chemical vapour deposition (CVD) on (001) Si. The proton irradiation was done to a dose of 2.8 × 1016 protons/cm2 and the annealing took place at 1300°C and 1600°C for 1hr. The main techniques used for the analysis were transmission electron microscopy (TEM) and high resolution TEM (HRTEM). From the diffraction study of the material the phase of the SiC was confirmed to be the cubic beta phase with the zinc-blende structure. The main defects found in the β- SiC were stacking faults (SFs) with their associated partial dislocations and microtwins. The SFs were uniformly distributed throughout the foil. The SFs were identified as having a fault vector of the type 1/3 <111> with bonding partial dislocations of the type 1/6 <121> by using image simulation. The SFs were also found to be predominantly extrinsic in nature by using HRTEM analysis of SFs viewed edge-on. Also both bright and dar-field images of SFs on inclined planes exhibited symmetrical and complementary fringe contrast images. This is a result of the anomalous absorption ratio of SiC lying between that of Si and diamond. The analysis of the annealed and unannealed irradiated β-SiC yielded no evidence of radiation damage or change in the crystal structure of the β-SiC. This confirmed that β-SiC is a radiation resistant material. The critical proton dose for the creation of small dislocation loops seems to be higher than for other compound semiconductors with the zinc-blende structure.
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Holland, Anthony James. « Analysis of crystal defects by simulation of x-ray section topographs ». Thesis, Durham University, 1993. http://etheses.dur.ac.uk/5589/.

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This thesis is concerned with the simulation of the contrast in X-ray section topographs due to the strains induced in silicon single crystals by various types of technologically relevant crystal defect. A general introduction to the field of X- ray topography is presented, illustrating that this technique is well suited to the characterisation of defect induced strain in highly perfect crystals. A review of X-ray dynamical theory is given, culminating in Takagi's equations for a crystal containing a defect. Techniques for simulating X-ray section topographs, based on Takagi's equations, are discussed. Computer simulation of section topographs has been used throughout this work to deduce the microscopic strains from the X-ray topographic images. The volume of oxygen precipitates in MCZ silicon was found to increase linearly as lnT, where T is the annealing temperature of the sample. Results suggest that the vast majority of precipitates which survive to maturity are nucleated at approximately the same time, subsequently growing at the same rate. An industrial role for simulation in conjunction with experiment is proposed, in the evaluation of the precipitate depth and the deformation parameter, C, representing the precipitate strain magnitude. The technological relevance of these two quantities is discussed. The effect of surface relaxation on the structure of images due to precipitates has been investigated. The critical depth (_z(_crit)) at which the effect of surface relaxation became negligible was found to increase linearly with lnC. Simulations have been generated for crystals containing oxygen precipitate distributions, with denuded zones. Characteristic image features have been discussed. Studies on precipitate resolvability revealed that the critical separation for two precipitates to be just resolved increases linearly as lnC. An extensive study of intrinsic gettering has been undertaken, in terms of decorated dislocations. The strain distribution due to precipitate decoration was modelled by the cylindrical inclusion model. It was shown that even for very low precipitate strains, precipitate decoration is distinguishable from the associated dislocation by section topography. Hence, an industrial role is proposed for simulation, in conjunction with experiment, in the parameterisation of the strain induced by decorated dislocations. To fully explore the use of the cylindrical inclusion model in this way, the variation in the inclusion strain magnitude was determined as a function of the precipitate strain and density, and the size of the precipitate distribution. It was found that the strain magnitude of the equivalent cylindrical inclusion must increase more rapidly relative to the precipitate deformation parameter for low-order reflections than for high-order reflections. Decorated dislocations have been shown to be resolvable by section topography even in the most dislocation-rich sihcon samples. The industrial usefulness of this characteristic is discussed. A study was made of the critical deformation parameter, C(_crit), for decorated dislocations to be just resolved, as a function of the separation, k, of the dislocations. For k greater than about 45µm, the variation of In(C(_crit) with k was linear. For smaller separations, the linearity breaks down because of the increasingly important strain contribution due to the dislocations. The strains induced by oxide films and devices in the silicon substrates onto which they are formed have been investigated. Experimental section topographs of oxide edge regions and devices on silicon have been simulated, and the visibility of the extra set of fringes found in simulations by another worker has been examined. The variation in image structure with device position on the entrance and exit surfaces has been investigated. An absolute minimum on device width detectable by section topography of lµm has been found. However, this minimum was found to depend on device-induced strain, and for values of strain characteristic of contemporary devices, the minimum detectable device width was found to be at least 3.5µm. This is above the limits set by the geometric and other constraints of the experimental technique. A thorough study has been made of the cancellation of opposing strains due to opposite edges of a device. The total distortion induced by the device was found to be minimised by reducing the device width and increasing the force per unit length, 5, along the device edges. Quantitative information has been obtained on this process. It was found that the fractional increase in lattice parameter at a fixed point, due to device-induced strain, increases linearly with S, with increasing gradient for increasing device width. It was shown that the narrower the device, the faster the relative fall-off in fractional increase in lattice parameter with increasing displacement from one edge of the device.
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Nakamura, Daisuke. « Bulk growth and extended-defect analysis of high-quality SiC single crystals ». 京都大学 (Kyoto University), 2008. http://hdl.handle.net/2433/136293.

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Garces, Nelson Y. « Analysis of paramagnetic point defects in KH₂PO₄ and KTiOPO₄ crystals ». Morgantown, W. Va. : [West Virginia University Libraries], 2000. http://etd.wvu.edu/templates/showETD.cfm?recnum=1778.

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Thesis (Ph. D.)--West Virginia University, 2000.
Title from document title page. Document formatted into pages; contains xii, 116 p. : ill. Includes abstract. Includes bibliographical references (p. 106-109).
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Hung, Wing Wa. « FTIR and XPS of congruent and stoichiometric LiNbO3 ». HKBU Institutional Repository, 2003. http://repository.hkbu.edu.hk/etd_ra/442.

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Livres sur le sujet "Crystal defect analysis"

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Snyder, R. L. Defect and microstructure analysis by diffraction. Oxford : Oxford University Press, 1999.

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2

Large-angle convergent-beam electron diffraction (LACBED) : Applications to crystal defects. Paris : Société Française des Microscopies, 2002.

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Introduction to elasticity theory for crystal defects. 2e éd. Singapore : World Scientific, 2016.

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Introduction to elasticity theory for crystal defects. Cambridge : Cambridge University Press, 2012.

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E, Cladis P., Palffy-Muhoray P et Saupe Alfred 1925-, dir. Dynamics and defects in liquid crystals : A festschrift in honor of Alfred Saupe. Amsterdam : Gordon and Breach Science Publishers, 1998.

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Yang, Guang. Flux pinning, defect analysis and growth of high temperature superconducting single crystals. Birmingham : University of Birmingham, 1994.

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L, Aseev A., dir. Clusters of interstitial atoms in silicon and germanium. Berlin : Akademie Verlag, 1994.

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Optical absorption of impurities and defects in semiconducting crystals : Hydrogen-like centres. Heidelberg : Springer, 2010.

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Spaeth, Johann-Martin. Structural analysis of point defects in solids : An introduction to multiple magnetic resonance spectroscopy. Berlin : Springer-Verlag, 1992.

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Spaeth, Johann-Martin. Structural Analysis of Point Defects in Solids : An Introduction to Multiple Magnetic Resonance Spectroscopy. Berlin, Heidelberg : Springer Berlin Heidelberg, 1992.

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Chapitres de livres sur le sujet "Crystal defect analysis"

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Jianfa, Jing, Wang Shuai, Chen Feng, Yang Lingzhi et Fu Baoquan. « Analysis of Coarse Crystal Defect During Rolling of 3J1A Alloy ». Dans The Minerals, Metals & ; Materials Series, 839–46. Cham : Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-22524-6_77.

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Bassignana, I. C., D. A. Macquistan et D. A. Clark. « X-Ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AlGaAs Layers on GaAs(001) ». Dans Advances in X-Ray Analysis, 507–17. Boston, MA : Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3744-1_56.

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Bhavana, A., Puspa Devi Pukhrambam, Abinash Panda et Malek G. Daher. « Design and Analysis of T-Shaped Defect-Based Photonic Crystal Waveguide for Application of Optical Interconnect ». Dans Lecture Notes in Electrical Engineering, 45–53. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4495-8_2.

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Hashizume, Takashi, Atsushi Saiki et Shogo Miwa. « Crystal Structure of the Defect Pyrochlore Potassium Tantalate on Ion-Exchanging Dipping in Sodium Aqueous Solution by Rietveld Analysis ». Dans Ceramic Transactions Series, 137–45. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2018. http://dx.doi.org/10.1002/9781119494096.ch14.

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Benediktovitch, Andrei, Ilya Feranchuk et Alexander Ulyanenkov. « X-Ray Diffraction from Crystals with Defects ». Dans Theoretical Concepts of X-Ray Nanoscale Analysis, 217–63. Berlin, Heidelberg : Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-38177-5_6.

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Holba, Pavel, et David Sedmidubský. « Crystal Defects and Nonstoichiometry Contributions to Heat Capacity of Solids ». Dans Hot Topics in Thermal Analysis and Calorimetry, 53–74. Dordrecht : Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-3150-1_3.

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Gao, Bing, et Koichi Kakimoto. « Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells ». Dans Defects and Impurities in Silicon Materials, 241–72. Tokyo : Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55800-2_5.

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Kitano, Tomohisa, et Kazuko Ikeda. « Analysis of Defects in Devices and Silicon Crystals in Production Lines ». Dans Ultraclean Surface Processing of Silicon Wafers, 286–302. Berlin, Heidelberg : Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_20.

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Kato, Tomohisa, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa et Kazuo Arai. « Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping ». Dans Materials Science Forum, 239–42. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.239.

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Wang, Ke, Ren Ke Kang, Zhu Ji Jin et Dong Ming Guo. « Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process ». Dans Optics Design and Precision Manufacturing Technologies, 739–44. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-458-8.739.

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Actes de conférences sur le sujet "Crystal defect analysis"

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Gamare, Karuna, et Ranjan Bala Jain. « Performance analysis of 2D photonic crystal with line defect ». Dans INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5131598.

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Liu, Danyu, Haroldo T. Hattori, Lan Fu, Hoe Tan et Chennupati Jagadish. « Analysis of multi-wavelength photonic crystal single-defect laser arrays ». Dans 2010 23rd Annual Meeting of the IEEE Photonics Society (Formerly LEOS Annual Meeting). IEEE, 2010. http://dx.doi.org/10.1109/photonics.2010.5698980.

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Rieske, Ralf, Rene Landgraf et Klaus-Jurgen Wolter. « Novel method for crystal defect analysis of laser drilled TSVs ». Dans 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074155.

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Sebastian, Elizabeth, Jie Zhu et Zhi Qiang Mo. « Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes ». Dans 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2019. http://dx.doi.org/10.1109/ipfa47161.2019.8984809.

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Kittler, Martin, Tzanimir Arguirov, Reiner Schmid, Winfried Seifert et Teimuraz Mchedlidze. « Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics ». Dans ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0137.

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Abstract Crystalline silicon used for fabrication of solar cells, such as multicrystalline silicon (mc-Si), contains a high density of extended crystal defects. Since mc-Si wafers exhibit an inhomogeneous defect distribution, there is a need to combine the spectral capabilities with the ability of spatially resolving the defect areas. This paper reports application of luminescence and electron-beam-induced current (EBIC) techniques for characterization of defects in solar Si. The first part introduces luminescence features of defective Si and discusses application examples. The second part starts with explanation of the EBIC technique, including details about the temperature dependence of the EBIC defect contrast c(T). Then, application examples of the c(T) behavior and the analysis of the "interaction" of grain boundaries with p-n junctions are discussed. The paper demonstrates the potential of luminescence for nondestructive characterization of Si wafers and solar cells in terms of in-line defect detection and process control.
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Shuting, Chen, Li Lihong, Du Anyan et Hua Younan. « Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA) ». Dans ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0293.

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Abstract In this work, delineation of crystal defects in Si by preferential chemical etching (Wright etch) is discussed. Investigation of defects in Si wafers by preferential chemical etching enables the study of various types of crystal defects for large area defect distribution (up to full wafer) and root cause analysis. In the case of dislocation defects, the shapes of etch pits are different for different etching duration. We show the mechanism of the pit shape evolution under preferential etching and suggested the appropriate etching duration for defect type identification with inspection by optical microscopes. The dislocation delineation method has been applied to a case of functional failure of devices caused by abnormal process in Laser Scanning Annealing (LSA). It was shown that the distribution of dislocation defects depends largely on the direction of LSA scan direction. We discuss the relationship between dislocation defect distribution and the density and uniformity of the active-Si patterns as well as possible solutions for elimination of dislocation defects in LSA process.
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Kalra, Yogita, Nishant Shankhwar et Ravindra Sinha. « Dielectric zero-index metamaterial filled photonic crystal defect waveguide : design and analysis ». Dans Metamaterials, Metadevices, and Metasystems 2018, sous la direction de Nader Engheta, Mikhail A. Noginov et Nikolay I. Zheludev. SPIE, 2018. http://dx.doi.org/10.1117/12.2320904.

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Lee, Sang Hun, Jeong Won Kang, Hyun Jung Oh et Do Hyun Kim. « Simulation analysis for the ring patterned void defect in silicon mono crystal ». Dans 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO). IEEE, 2010. http://dx.doi.org/10.1109/nano.2010.5697823.

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Martinez, R., S. Amirhaghi, B. Smith, A. Mowbray, Mark J. Furlong, J. P. Flint, G. Dallas, G. Meshew et J. Trevethan. « Towards the production of very low defect GaSb and InSb substrates : bulk crystal growth, defect analysis and scaling challenges ». Dans SPIE OPTO, sous la direction de Manijeh Razeghi. SPIE, 2013. http://dx.doi.org/10.1117/12.2005130.

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Landgraf, R., R. Rieske, A. N. Danilewsky et K. J. Wolter. « Laser drilled through silicon vias : Crystal defect analysis by synchrotron x-ray topography ». Dans 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684492.

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Rapports d'organisations sur le sujet "Crystal defect analysis"

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Yazici, R., et D. Kalyon. Microstrain and Defect Analysis of CL-20 Crystals by Novel X-Ray Methods. Fort Belvoir, VA : Defense Technical Information Center, avril 1996. http://dx.doi.org/10.21236/ada311738.

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Kirchhoff, Helmut, et Ziv Reich. Protection of the photosynthetic apparatus during desiccation in resurrection plants. United States Department of Agriculture, février 2014. http://dx.doi.org/10.32747/2014.7699861.bard.

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In this project, we studied the photosynthetic apparatus during dehydration and rehydration of the homoiochlorophyllous resurrection plant Craterostigmapumilum (retains most of the photosynthetic components during desiccation). Resurrection plants have the remarkable capability to withstand desiccation, being able to revive after prolonged severe water deficit in a few days upon rehydration. Homoiochlorophyllous resurrection plants are very efficient in protecting the photosynthetic machinery against damage by reactive oxygen production under drought. The main purpose of this BARD project was to unravel these largely unknown protection strategies for C. pumilum. In detail, the specific objectives were: (1) To determine the distribution and local organization of photosynthetic protein complexes and formation of inverted hexagonal phases within the thylakoid membranes at different dehydration/rehydration states. (2) To determine the 3D structure and characterize the geometry, topology, and mechanics of the thylakoid network at the different states. (3) Generation of molecular models for thylakoids at the different states and study the implications for diffusion within the thylakoid lumen. (4) Characterization of inter-system electron transport, quantum efficiencies, photosystem antenna sizes and distribution, NPQ, and photoinhibition at different hydration states. (5) Measuring the partition of photosynthetic reducing equivalents between the Calvin cycle, photorespiration, and the water-water cycle. At the beginning of the project, we decided to use C. pumilum instead of C. wilmsii because the former species was available from our collaborator Dr. Farrant. In addition to the original two dehydration states (40 relative water content=RWC and 5% RWC), we characterized a third state (15-20%) because some interesting changes occurs at this RWC. Furthermore, it was not possible to detect D1 protein levels by Western blot analysis because antibodies against other higher plants failed to detect D1 in C. pumilum. We developed growth conditions that allow reproducible generation of different dehydration and rehydration states for C. pumilum. Furthermore, advanced spectroscopy and microscopy for C. pumilum were established to obtain a detailed picture of structural and functional changes of the photosynthetic apparatus in different hydrated states. Main findings of our study are: 1. Anthocyan accumulation during desiccation alleviates the light pressure within the leaves (Fig. 1). 2. During desiccation, stomatal closure leads to drastic reductions in CO2 fixation and photorespiration. We could not identify alternative electron sinks as a solution to reduce ROS production. 3. On the supramolecular level, semicrystalline protein arrays were identified in thylakoid membranes in the desiccated state (see Fig. 3). On the electron transport level, a specific series of shut downs occur (summarized in Fig. 2). The main events include: Early shutdown of the ATPase activity, cessation of electron transport between cyt. bf complex and PSI (can reduce ROS formation at PSI); at higher dehydration levels uncoupling of LHCII from PSII and cessation of electron flow from PSII accompanied by crystal formation. The later could severe as a swift PSII reservoir during rehydration. The specific order of events in the course of dehydration and rehydration discovered in this project is indicative for regulated structural transitions specifically realized in resurrection plants. This detailed knowledge can serve as an interesting starting point for rationale genetic engineering of drought-tolerant crops.
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