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Littérature scientifique sur le sujet « Diodes, Schottky-barrier »

Auteur : Grafiati

Publié le 4 juin 2021

Mis à jour le 31 juillet 2024

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Articles de revues sur le sujet "Diodes, Schottky-barrier"

Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen et Sang-Mo Koo. « Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes ». Journal of Nanoscience and Nanotechnology 21, n^o 3 (1 mars 2021) : 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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Zhao, Jian H., Kuang Sheng et Ramon C. Lebron-Velilla. « SILICON CARBIDE SCHOTTKY BARRIER DIODE ». International Journal of High Speed Electronics and Systems 15, n^o 04 (décembre 2005) : 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Okino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama et Renichi Yamada. « Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes ». Materials Science Forum 740-742 (janvier 2013) : 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.

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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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Shashikala, B. N., et B. S. Nagabhushana. « Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes ». Semiconductor Physics, Quantum Electronics and Optoelectronics 24, n^o 04 (23 novembre 2021) : 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

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Hjort, Tomas, Adolf Schöner, Andy Zhang, Mietek Bakowski, Jang-Kwon Lim et Wlodek Kaplan. « High Temperature capable SiC Schottky diodes, based on buried grid design. » Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (1 janvier 2014) : 000058–60. http://dx.doi.org/10.4071/hitec-tp11.

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Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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Shin, Myeong-Cheol, Dong-Hyeon Kim, Seong-Woo Jung, Michael A. Schweitz et Sang-Mo Koo. « Temperature Sensors Based on AlN/4H-SiC Diodes ». Science of Advanced Materials 13, n^o 7 (1 juillet 2021) : 1318–23. http://dx.doi.org/10.1166/sam.2021.3989.

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ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

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Liu, Hai Rui, et Jun Sheng Yu. « Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection ». Advanced Materials Research 683 (avril 2013) : 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

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Polyntsev, Egor, Evgeny Erofeev et Igor Yunusov. « The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications ». Electronics 10, n^o 22 (15 novembre 2021) : 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Hamada, Toshiyuki, Ikuo Nanno, Norio Ishikura, Masayuki Fujii et Shinichiro Oke. « Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges ». Energies 16, n^o 23 (27 novembre 2023) : 7792. http://dx.doi.org/10.3390/en16237792.

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Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures. When a bypass diode experiences short-circuit failure due to indirect lightning, the damage may not be immediately visible. When solar radiation is subsequently received, the current circulating in the closed circuit formed by the cell string and short-circuited bypass diode flows, resulting in overheating and burnout of the short-circuited bypass diode. The authors’ research group previously reported that when a bypass diode fails within a range of approximately 10−1 Ω to 10 Ω, the heat generated by the failed bypass diode is high, posing the risk of burnout. However, the detailed failure characteristics of the bypass diode that fail because of indirect lightning surges are not clear. In this study, we performed indirect lightning fracture tests and clarified the dielectric breakdown characteristics of Schottky barrier diodes (SBDs) contained in the bypass diodes of photovoltaic solar cell modules, which are subjected to indirect lightning surges. Furthermore, we attempted to determine the conditions of indirect lightning that resulted in a higher risk of heat and ignition. As a result, short-circuit failures occurred in all the Schottky barrier diodes that were destroyed in the forward or reverse direction because of the indirect lightning surges. Moreover, the fault resistance decreased as the indirect lightning surge charge increased. These results indicate that the risks of heat generation and burnout increase when the Schottky barrier diode fails with a relatively low electric charge from an indirect lightning surge. In addition, we observed that for a forward breakdown of the Schottky barrier diode, the range of the indirect lightning surge that results in a fault condition with a higher risk of heat generation and burnout is wider than that for a reverse breakdown.

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Paosawatyanyong, Boonchoat, K. Honglertsakul et D. K. Reinhard. « DLC-Film Schottky Barrier Diodes ». Solid State Phenomena 107 (octobre 2005) : 75–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.75.

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A microwave plasma reactor (MPR) is constructed as a facility for the plasma assisted chemical vapor deposition (PACVD) process. The reactor is a mode-adjustable resonance cavity of cylindrical shape. A 2.45 GHz microwave generator is used to ignite the plasma inside the lengthadjustable cavity. The diamond-like carbon (DLC) thin film depositions onto the silicon substrates are carried out using H2–CH4 discharge. The Schottky barrier diodes (SBD) are then formed on to the DLC films. The responses of DLC-SBD to DC and time varying signals have been studied as a function of frequency. The frequency dependent response results are compared to the computer models, which includes as input parameters the bulk series resistance, the capacitance associated with the bulk material between the space-charge layer and the ohmic contact, the space-charge layer capacitance, and the diode dynamic resistance.

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Thèses sur le sujet "Diodes, Schottky-barrier"

Brezeanu, Mihai. « Diamond Schottky barrier diodes ». Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/226757.

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Research on wide band gap semiconductors suitable for power electronicdevices has spread rapidly in the last decade. The remarkable results exhibited bysilicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since2001, showed the potential of wide band gap semiconductors for replacing silicon (Si)in the range of medium to high voltage applications, where high frequency operationis required. With superior physical and electrical properties, diamond became apotential competitor to SiC soon after Element Six reported in 2002 the successfulsynthesis of single crystal plasma deposited diamond with high catTier mobility. This thesis discusses the remarkable properties of diamond and introducesseveral device structures suitable for power electronics. The calculation of severalfigures of merit emphasize the advantages of diamond with respect to silicon andother wide band gap semiconductors and clearly identifies the areas where its impactwould be most significant. Information regarding the first synthesis of diamond,which took place back in 1954, together with data regarding the modern technologicalprocess which leads nowadays to high-quality diamond crystals suitable for electronicdevices, are reviewed. Models regarding the incomplete ionization of atomic dopantsand the variation of catTier mobility with doping level and temperature have beenelaborated and included in numerical simulators. The study introduces the novel diamond M-i-P Schottky diode, a version ofpower Schottky diode which takes advantage of the extremely high intrinsic holemobility. The structure overcomes the drawback induced by the high activationenergies of acceptor dopants in diamond which yield poor hole concentration at roomtemperature. The complex shape of the on-state characteristic exhibited by diamondM-i-P Schottky structures is thoroughly investigated by means of experimentalresults, numerical simulations and theoretical considerations. The fabrication of a ramp oxide termination on a diamond device is for thefirst time reported in this thesis. Both experimental and simulated results show thepotential of this termination structure, previously built on Si and SiC power devices. A comprehensive comparison between the ramp oxide and two other versions of thefield plate termination concept, the single step and the three-step structures, has beenperformed, considering aspects such as electrical performance, occupied area,complexity of technological process and cost. Based on experimental results presented in this study, together withpredictions made via simulations and theoretical models, it is concluded that diamondM-i-P Schottky diodes have the ability to deliver significantly higher performancecompared to that of SiC SBDs if issues such as material defects, Schottky contactformation and measurement of reliable ionization coefficients are carefully addressedin the near future.

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Yates, Kenneth Lee 1959. « Avalanche characteristics of silicide Schottky barrier diodes ». Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276634.

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This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.)

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Blasciuc-Dimitriu, Cezar. « Theoretical modelling of Schottky barrier diodes in SiC ». Thesis, University of Newcastle Upon Tyne, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405314.

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Ngoepe, P. N. M. (Phuti Ngako Mahloka). « Optoelectronic characterisation of AlGaN based Schottky barrier diodes ». Diss., University of Pretoria, 2013. http://hdl.handle.net/2263/24890.

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Recent advances in growth techniques have lead to the production of high quality GaN and this has played a vital role in the improvement of GaN based devices. A number of device types can be produced from GaN. Spectrally selective devices can be produced by creating ternary or quaternary material systems by partially substituting either Al or In for Ga in GaN. This allows a wide spectral range that can be achieved ranging from the visible to the ultraviolet. The applications of detectors based on these material systems are vast and include areas such as biological, military, environmental, industrial and scientific spheres. In front illuminated Schottky barrier photodetectors, two major factors influencing the sensitivity of the device are the reverse leakage current and the transparency of the Schottky contact. In order to reduce the reverse current of semiconductor based devices, increase the barrier height, and enhance the adhesion of a metal on a semiconductor it is important to subject the contact to annealing. Annealing studies have been performed on AlGaN based photodiodes to investigate the evolution of the optical and electrical properties. In this study, the electrical and optical characteristics of AlGaN based Ni/Au and Ni/Ir/Au Schottky photodiodes were investigated. The electrical properties of the photodiodes were optimised by annealing in an Ar ambient. An increase in the Schottky barrier height and a decrease in the reverse leakage current were observed with increasing annealing temperature up to 500 oC. This effect was observed for both the Ni/Au and Ni/Ir/Au photodiodes. The optical characteristics of the photodiodes, which include the responsivity and the quantum efficiency, were also investigated. UV/visible rejection ratios of as high as 103 were obtained. The transmittance of Ni/Au and Ni/Ir/Au metal layers deposited on a quartz substrate were optimised by annealing. This was under the same ambient conditions as the Schottky photodiode. The transmittance increased with annealing temperature for the Ni/Au metal layer whereas it decreased at higher temperatures for the Ni/Ir/Au layer. The transmittance of the Ni/Au metal layer reached as high as 85 % after 500 oC annealing. The transmittance of the Ni/Ir/Au only reached a high of 41 % after 400 oC annealing.
Dissertation (MSc)--University of Pretoria, 2013.
Physics
unrestricted

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Kummari, Rani S. « Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides ». Connect to resource online, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1266422079.

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Xu, Hui Park Minseo. « Fabrication and electrical/optical characterization of bulk GaN-based Schottky diodes ». Auburn, Ala, 2009. http://hdl.handle.net/10415/1871.

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Korkmaz, Sibel. « Characterization Of Cds Thin Films And Schottky Barrier Diodes ». Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606623/index.pdf.

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CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping. As a result of the structural and electrical investigation it was found that CdS thin films were of the polycrystalline structure and n-type
and of the transmission analysis optical band gap was found to be around 2.4 eV. Temperature dependent conductivity measurements were carried out in the range of 180 K &ndash
400 K. The dominant conduction mechanism is identified as tunnelling between 180 K &ndash
230 K and thermionic emission between 270 K and 400 K. To produce Schottky devices, CdS thin films were deposited onto the tin-oxide and indium-tin-oxide coated glasses, by the same method. Gold, platinum, carbon and gold paste were used as metal front contact in these devices. The area of these contacts were about...... Temperature dependent current-voltage measurements between 200 K and 350 K, room temperature current-voltage measurements, capacitance-voltage measurement in the frequency range 1 kHz &ndash
1 MHz and photoresponse measurements were carried out for the characterization of these diodes. Ideality factor of the produced Schottky devices were found to be at least 1.5, at room temperature. Dominant current transport mechanism in the diodes with gold contacts was determined to be tunnelling from the temperature dependent current voltage analysis. Donor concentration was calculated to be about ........ from the voltage dependent capacitance measurement.

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Magill, Stephen Hugh Samuel. « The application of Schottky barrier diodes to infrared imaging ». Thesis, Queen's University Belfast, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283889.

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Naredla, Sai Bhargav. « Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes ». Youngstown State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725.

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Kashefi-Naini, A. « A study of some transition metal-silicon Schottky barrier diodes ». Thesis, University of Kent, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375200.

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Livres sur le sujet "Diodes, Schottky-barrier"

P, Chen N., dir. Handbook of light emitting and Schottky diode research. Hauppauge, NY : Nova Science Publishers, 2009.

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Bakush, Moftah Mohamed. Minority carrier injection in high barrier Schottky diodes : An analytical model. Manchester : University of Manchester, 1993.

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Incorporated, Texas Instruments, dir. ALS/AS logic data book. [Dallas, Tex.] : Texas Instruments, 1986.

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Incorporated, Texas Instruments, dir. The TTL logic data book. [Dallas, Tex.] : Texas Instruments, 1988.

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Meier, Johann Emil. Herstellung und Untersuchung passivierender Grenzschichten in amorphen Silizium Schottky-Solarzellen. Konstanz : Hartung-Gorre, 1992.

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W, Bishop, Mattauch R. J et Goddard Space Flight Center. Instrument Division., dir. Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications : Final progress report April 15, 1989 - December 31, 1989. Charlottesville, VA : School of Engineering & Applied Science, University of Virginia, 1990.

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Evans, Howard Lee. Measurement of Schottky barrier interface states. 1986.

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Song, Jerng-Sik. The opto-electronic and structural properties of Si-Si and metal-Si interfaces. 1985.

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Song, Jerng-Sik. The opto-electronic and structural properties of Si-Si and metal-Si interfaces. 1985.

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Metal--Semiconductor Schottky Barrier Junctions and Their Applications. Springer, 2012.

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Chapitres de livres sur le sujet "Diodes, Schottky-barrier"

Singh, Ranbir, et B. Jayant Baliga. « Schottky Barrier Diodes ». Dans Cryogenic Operation of Silicon Power Devices, 25–35. Boston, MA : Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7_3.

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Paosawatyanyong, B., K. Honglertsakul et D. K. Reinhard. « DLC-Film Schottky Barrier Diodes ». Dans Solid State Phenomena, 75–80. Stafa : Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-12-4.75.

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Cullen, A. L. « Second-Harmonic Effects in Schottky-Barrier Diodes ». Dans Recent Advances in Fourier Analysis and Its Applications, 499–506. Dordrecht : Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0665-5_29.

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Gupta, K. M., et Nishu Gupta. « Majority Carrier Diodes (Tunnel Diode, Backward Diode, Schottky Barrier Diode, Ohmic Contacts, and Heterojunctions) ». Dans Advanced Semiconducting Materials and Devices, 263–83. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_7.

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Stephani, Dietrich, Reinhold Schoerner, Dethard Peters et Peter Friedrichs. « Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes ». Dans Silicon Carbide and Related Materials 2005, 1147–50. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1147.

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Nakamura, Tomonori, Toshiyuki Miyanagi, Isaho Kamata et Hidekazu Tsuchida. « Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes ». Dans Silicon Carbide and Related Materials 2005, 927–30. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.927.

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Ota, Chiharu, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa et Hiromichi Ohashi. « Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) ». Dans Materials Science Forum, 881–84. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.881.

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Pierobon, R., G. Meneghesso, E. Zanoni, Fabrizio Roccaforte, Francesco La Via et Vito Raineri. « Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights ». Dans Materials Science Forum, 933–36. Stafa : Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.933.

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Osman, M. A., U. Ravaioli et D. K. Ferry. « Monte Carlo Investigation of Hot Carriers Generated by Subpicosecond Laser Pulses in Schottky Barrier Diodes ». Dans Picosecond Electronics and Optoelectronics, 97–99. Berlin, Heidelberg : Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_19.

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Ota, Chiharu, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa et Hiromichi Ohashi. « Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties ». Dans Silicon Carbide and Related Materials 2005, 1175–78. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1175.

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Actes de conférences sur le sujet "Diodes, Schottky-barrier"

Wu, Wei, Andy G. Lozowski et Fengxia Wang. « Improved Rectifier Circuit With Backward Diodes for Low Power Source Harvesting ». Dans ASME 2014 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/dscc2014-6018.

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Most energy harvesting circuits use a Schottky diode rectifier as the first stage in the power conversion system. Schottky diodes are chosen for their low forward-voltage drop which can be as low as 0.15V. Further improvements toward enabling lower voltage sources may be accomplished by using active rectifiers with MOSFET transistors. However such circuits still require an initial start-up phase in which the source voltage needs to exceed the Schottky barrier voltage. As an alternative we propose using backward diodes to build a rectifier with much smaller barrier voltage compared to the Schottky solution. In the past, backward diodes were used in low-voltage diode detectors and are essentially a variation of tunnel diodes. This paper provides both simulation results and an experimental comparative study of the performance of Schottky and backward diodes. The relationship between optimal load, frequency and internal impedance of the voltage source will be discussed as well.

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Erofeev, Evgeny V., et Ivan V. Fedin. « Fast switching GaN Schottky barrier diodes ». Dans 2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2016. http://dx.doi.org/10.1109/edm.2016.7538688.

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Seok, O., W. Ahn, Y. Kim, M. Ha et M. Han. « AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact ». Dans 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-6-6.

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Hazdra, Pavel, Alexandr Laposa, Zbyněk Šobáň, Vojtěch Povolný, Jan Voves, Nicolas Lambert, Andrew Taylor et Vincent Mortet. « Power Diode Structures Realized on (113) oriented Boron Doped Diamond ». Dans 16th International Seminar On Power Semiconductors. Czech Technical University in Prague, 2023. http://dx.doi.org/10.14311/isps.2023.012.

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Molybdenum, ruthenium, and platinum contacts covered by the gold capping layer were used for preparation of pseudo-vertical Schottky barrier diodes on (113) oriented homoepitaxial boron-doped diamond. After metal deposition, diodes were stabilized by annealing for 20 minutes at 300 ˚C and their IV characteristics were measured at temperatures from 30 to 180 °C. Results show that all three metals can be used to realize Schottky diodes with sufficient forward and blocking capability. Moreover, molybdenum and ruthenium can also be used to create a stable ohmic contact on heavily doped contact p ++ layer. Molybdenum provides optimum properties: a sufficient Schottky barrier height providing low leakage at a level of 10-8 A/cm2 and an acceptable forward voltage drop of 3.80V@JF=1kA/cm2 (measured at 150 °C), the rectifying ratio then reaches 1011 over the entire temperature range under study. Ruthenium contacts exhibit lower Schottky barrier, their forward voltage drop is thus lower (2.85V@JF=1kA/cm2@150 °C), but leakage increases rapidly with temperature. Platinum provides the highest Schottky barrier and guarantees the lowest level of the leakage (<10-8 A/cm2). However, the diodes have poorer forward characteristics: their ideality factor and forward voltage is high (7.35V@JF=1kA/cm2@150 °C). Maximum realizable diode area and achievable breakdown field (0.8MV/cm) then depend on the number of crystal defects (namely threading dislocations) appearing in the diode low-doped drift region.

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Maki, P. A., et D. J. Ehrlich. « In Situ Excimer Laser Irradiation of GaAs Surfaces During Schottky Barrier Formation* ». Dans Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C. : Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.ma3.

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Schottky barrier heights of all metals deposited on GaAs are largely controlled by the inherent Fermi level pinning at the surface which appears with even submonolayer coverages of metals or oxygen. The measured electrical characteristics of Schottky diodes will also depend upon the homogeneity of the surface at the time of metallization. Variations in the relative surface areas of oxides and clean surface will result in variations in apparent barrier height and diode ideality.

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Kaneko, T., I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai et K. Kakushima. « Characterization of β-Ga2O3 Schottky barrier diodes ». Dans 2018 18th International Workshop on Junction Technology (IWJT). IEEE, 2018. http://dx.doi.org/10.1109/iwjt.2018.8330290.

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Christianson, K. A. « Aging Effects in GaAs Schottky Barrier Diodes ». Dans 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363363.

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Yates, Kenneth L., et Eustace L. Dereniak. « Avalanche Characteristics Of Silicide Schottky Barrier Diodes ». Dans 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, sous la direction de Solomon Musikant. SPIE, 1988. http://dx.doi.org/10.1117/12.945847.

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Shenai, K. « Optimization of 4H-SiC power Schottky Barrier Diodes ». Dans 2013 IEEE Energytech. IEEE, 2013. http://dx.doi.org/10.1109/energytech.2013.6645337.

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Pu, Taofei, Xiaobo Li, Xiao Wang, Yuyu Bu, Wei Zhao, Zhitao Chen et Jin-Ping Ao. « GaN Schottky barrier diodes for microwave power transmission ». Dans 2018 IEEE MTT-S International Wireless Symposium (IWS). IEEE, 2018. http://dx.doi.org/10.1109/ieee-iws.2018.8400985.

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Rapports d'organisations sur le sujet "Diodes, Schottky-barrier"

Holck, D. Characterization and development report for the 375492 : A Schottky barrier diode die. Office of Scientific and Technical Information (OSTI), juin 1990. http://dx.doi.org/10.2172/6879807.

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