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Articles de revues sur le sujet « Electrochemical silicon etching »

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Publié le 1 mars 2025

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1

Syari’ati, Ali, et Veinardi Suendo. « Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon ». Materials Science Forum 737 (janvier 2013) : 60–66. http://dx.doi.org/10.4028/www.scientific.net/msf.737.60.

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Porous silicon (p-Si) is a well-known silicon based material that can emit visible light at room temperature. The radiative recombination that originated from quantum confinement effect shows photoluminescence (PL) in red, while the defect on silicon oxide at the surface of p-Si shows in blue-green region. Porous silicon can be synthesized through two methods; wet-etching and electrochemical anodization using hydrofluoric acid as the main electrolyte. The electrochemical anodization is more favorable due to faster etching rate at the surface than the conventional wet-etching method. The objective of this research is to show that both of porous silicons can be synthesized using the same main electrolyte but by varying the reaction environment during anodization/etching process. Here, we shows the wet-etching method that enhanced by polarization concentration will produce porous silicon with silicon oxide defects by means blue-green emission, while direct electrochemical anodization will produce samples that emit red PL signal. The effect of introducing KOH into the electrolyte was also studied in the case of enhanced-wet-etching method. Surface morphology of porous silicon and their photoluminescence were observed by Scanning Electron Microscope and PL spectroscopy, respectively.
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Cao, Dao Tran, Cao Tuan Anh et Luong Truc Quynh Ngan. « Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching ». Journal of Nanoelectronics and Optoelectronics 15, no 1 (1 janvier 2020) : 127–35. http://dx.doi.org/10.1166/jno.2020.2684.

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Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.
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Al-Jubouri, Furqan Saleh, Hamida I. Salman et Ahmed K. Al-Kadumi. « The effective of time etching and different acids on the morphological porous silicon ». IOP Conference Series : Earth and Environmental Science 1120, no 1 (1 décembre 2022) : 012045. http://dx.doi.org/10.1088/1755-1315/1120/1/012045.

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Abstract This paper study the characteristics of nano crystalline silicon prepared with the use of electrochemical etching with etching time (15,20) min for salt and Nitric acid (HNO3) and etching time (15,20) min for Ethanol and Hydrofluoric acid, and study the effect of this solutions on the characteristics of porous silicon (ps) will be produced by electrochemical etching by using electrochemical etching from p-type bulk silicon with resistivity (1-10 Ω.cm) with different time. after that, make a comparison for the morphological properties for porous silicon. Research employing X-ray diffraction and scanning electron microscopy instruments were also performed on the samples that were produced as a result. Micromachining etching uses electrochemical etching of silicon in HF solution. New wafer-etched structures are reported. Wall arrays, hole arrays, meander-shaped structures, spiral-like walls, microtubes, and more are produced. The electrochemical etch process and KOH etching time of the original pattern on final geometries are modelled.
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Ki, Bugeun, Keorock Choi, Kyunghwan Kim et Jungwoo Oh. « Electrochemical local etching of silicon in etchant vapor ». Nanoscale 12, no 11 (2020) : 6411–19. http://dx.doi.org/10.1039/c9nr10420h.

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Martin Kralik, Michaela Hola et Stanislav Jurecka. « Optical Properties of Porous Silicon Solar Cells for Use in Transport ». Communications - Scientific letters of the University of Zilina 21, no 3 (15 août 2019) : 53–58. http://dx.doi.org/10.26552/com.c.2019.3.53-58.

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Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and analyzed. We studied the influence of electrochemical etching parameters on spectral reflectance of pSi structure. A modification of interference pattern was observed due to changes of microstructure. We determined the thickness of pSi layers from spectral reflectance. Solar cells with a porous structure achieve high efficiency and long life. These solar cells are predestined for use in transport.
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6

Kim, Jeong, Sang Wook Park, In Sik Moon, Moon Jae Lee et Dae Won Kim. « Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell ». Solid State Phenomena 124-126 (juin 2007) : 987–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.987.

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An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .
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7

Jin, Dahee, Ju-Myung Kim, Ran Yi et Ji-Guang Zhang. « A New Approach to Synthesis of Porous Si Anode for Li-Ion Batteries Via Organic-Solvent Assisted Etching ». ECS Meeting Abstracts MA2024-02, no 5 (22 novembre 2024) : 570. https://doi.org/10.1149/ma2024-025570mtgabs.

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Silicon (Si) has been regarded as a promising anode for Li-ion batteries due to its high theoretical capacity (4200 mAh/g) compared to graphite anode (372 mAh/g). However, it undergoes significant volume changes (~ 300%) during lithiation and delithiation, leading to particle pulverization and continuous electrolyte decomposition on Si surface, which hinders its practical application. The porous silicon obtained by wet etching method using hydrogen fluoride (HF) can accommodate the volume changes and improve the overall performance of silicon anodes. However, HF etching is highly corrosive, leading to the generation of excess heat and bubbling, lower yields, and difficult to scale-up. Furthermore, the water in etchant oxidizes the newly exposed Si, generating more SiOx, which also cause over-etching of Si and worsen electrochemical performance. Herein, we report an organic-solvent assistant etching process for Si anode. In this process, selected organic solvent were mixed with the HF etchant. When micron sized Si/SiOx powder was added to the solution, the organic solvent in the mixed solution will preferentially be absorbed on the surface of Si/SiOx powder and form a shield which can enable controlled etching of silicon oxide (SiOx) and prevent direct contact between water and newly etched Si surface. This method leads to controllable etching of Si and avoids bubbling/overheating, results in a higher Si yield. The maximum temperature during the etching process is less than ~30°C. The various process parameters, including etchant composition, stirring speed, and time have been optimized to maximize the yield and electrochemical performance of the Si anode. A Si-based anode with organic-solvent assisted etching process has demonstrated improved cycling performance in a Si||Li(Ni0.6Co0.2Mn0.2)O2 (NMC622) full cell. It also leads to low swelling in both particle and electrode levels required for the next generation of high-energy LIBs. Similar organic-solvent assisted etching process can also be used in safe-etching of a broad range of materials.
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8

Sadowski, Horst, Reinhard Helbig et Stefan Rysy. « Electrochemical etching of silicon carbide ». Journal of Solid State Electrochemistry 3, no 7-8 (10 septembre 1999) : 437–45. http://dx.doi.org/10.1007/s100080050179.

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Mohd Radzi, Ahmad Afif Safwan, M. A. Yarmo, M. Rusop et Saifollah Abdullah. « Surface Morphology and Si 2p Binding Energy Investigation of Multilayer Porous Silicon Nanostructure ». Advanced Materials Research 620 (décembre 2012) : 17–21. http://dx.doi.org/10.4028/www.scientific.net/amr.620.17.

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Multilayer structure of porous silicon was fabricated using electrochemical etching method. Average thickness of multilayer structure was verified. Surface morphology from Atomic Force Microscopy (AFM) shows that surface roughness was decreased when higher etching time applied to the samples. Si 2p binding energies were corresponded to the composition of void within the silicon which prompted the formation of porous silicon nanostructure. Depth profiling technique from X-Ray photoelectron spectroscopy (XPS) was used for compositional determination of porous silicon layers since samples porosity varied according to current density applied during the electrochemical etching process. Multilayer porous silicon is a high potential candidate for Bragg grating waveguide device.
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Liu, Lan, Yan Xue, Xiao Ming Ren et Rui Zhen Xie. « Influence of Electrochemical Etching Parameters on Morphology of Porous Silicon ». Advanced Materials Research 1055 (novembre 2014) : 68–72. http://dx.doi.org/10.4028/www.scientific.net/amr.1055.68.

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In order to protect porous silicon from break and enhance it’s porosity and specific surface area, porous silicon is prepared with electrochemical etching method. The charateristic of porous silicon is investigated with SEM and high-speed adsorption surface area and porosity analyzer. The results show that the porous silicon prepared with the method of gradient etching and control of etching time is mechanically stable. The porosity and specfic surface area are improved.
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11

Chiang, Chao-Ching, et Philip Nathaniel Immanuel. « Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon : A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation ». Optics 5, no 4 (13 novembre 2024) : 465–76. http://dx.doi.org/10.3390/opt5040035.

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This study explores electrochemical etching to form porous silicon (PS), which has diverse biomedical and energy applications. Our objective is to gain new insights and drive significant scientific and technological advancements. Specifically, we study the effect of electrochemical etching of P-type silicon using laser irradiation in a hydrofluoric acid (HF) solution. The formation of the nanoscale PS structure can be successfully controlled by incorporating laser irradiation into the electrochemical etching process. The wavelength and power of the laser influence the formation of nanoporous silicon (NPS) on the surface during the electrochemical etching process. The luminous flux is monitored with the help of a customized integrating sphere system and an LED-based excitation source to find the light flux values distributed across the P-type nanolayer PS wafers. Analysis of the NPS and luminescence characteristics shows that the laser bandwidth controls the band gap energy absorption (BEA) phenomenon during the electrothermal reaction. It is demonstrated that formation of the NPS layer can be controlled in this combined laser irradiation and electrochemical etching technique by adjusting the range of the laser wavelength. This also allows for further precise control of the numerical trend of the luminous flux.
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Kuntyi, Оrest, Galyna Zozulya et Mariana Shepida. « Porous Silicon Formation by Electrochemical Etching ». Advances in Materials Science and Engineering 2022 (27 mai 2022) : 1–15. http://dx.doi.org/10.1155/2022/1482877.

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Porous silicon (PSi) is used as an effective material in biomedicine, sensors, solar cells, electrochemical energy, microelectronics, and nanotechnology. Considering the dependence of PSi functional properties on pore geometry and porous layer architecture, it is important to develop methods for controlled pore formation. After all, in the “procession” the method of obtaining PSi ⟶ pore geometry and architecture of PSi ⟶ functional properties of PSi, the decisive role belongs to the first participant. Among the most used methods, electrochemical etching is the most suitable for the controllability of the processes of nucleation and growth of pores since it can be controlled using the value of the current density, and the results are easily reproduced. This work analyses the literature on two types of electrochemical formation of PSi by anodic etching of (1) silicon surface and (2) silicon surface, modified with metal nanostructures. A modern explanation of the process of anodic dissolution of silicon with forming a porous surface in solutions containing HF is presented. The influence of such main factors on the process of anodic formation of PSi and its morphology is analyzed: the composition of the electrolyte and the role of each component in it; anode current density and methods of its supply (stationary, pulsed); duration; exposure to lighting; and temperature. Considerable attention is paid to the illustration of the role of alcohols and organic aprotic solvents on the formation of pore geometry. The influence of MNPs and metallic nanostructures on the process of localized metal-activated anodic etching of a semiconductor is analyzed.
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13

Wang, Guo Zheng, Xiao Na Li, Feng Yuan Yu, Yao Zhang, Yong Zhao Liang, Jin Chai, Ji Kai Yang et Qing Duo Duanmu. « Formation of High Aspect Ratio Macropore Array on N-Type Silicon ». Applied Mechanics and Materials 397-400 (septembre 2013) : 47–51. http://dx.doi.org/10.4028/www.scientific.net/amm.397-400.47.

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The fabrication of high aspect ratio macropore silicon arrays (MSA) on n-type silicon under optimum photo-electrochemical (PEC) etching (anodization) conditions was demonstrated. The depth of the MSA can reach 350 μm with an aspect ratio of more than 100. With the presence of AOS (a type of anionic surfactant) in the electrolyte, the pore walls solution is slowest, and is more suitable for the preparation of high aspect ratio n-type MSA. The etching voltage is critical for the formation of high aspect ratio MSA on n-type silicon. The relative spectral response curve was measured for silicon photo-electrochemical etching. An IR-LEDs (850 nm) array was proposed as light source for illumination of whole silicon wafers, which was proved available.
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Kouassi, Sebastien, Gael Gautier, Sebastien Desplobain, Loic Coudron et Laurent Ventura. « Macroporous Silicon Electrochemical Etching for Gas Diffusion Layers Applications : Effect of Processing Temperature ». Defect and Diffusion Forum 297-301 (avril 2010) : 887–92. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.887.

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MEMS technology requires low cost techniques to permit large scale fabrication for production. Porous silicon (PS) can be used in different manner to replace standard expensive etching techniques like DRIE (Deep Reactive Ion Etching). To perform same process quality as the latter, one need to understand how different parameters can influence porous silicon properties. We investigate here local formation of macroporous silicon on 2D and 3D silicon substrates. The blank substrate is a low doped (26–33 Ω cm) n type 6 inches silicon wafer. Then, an in situ phosphorus-doped polycrystalline silicon (N+ Poly-Si) is deposited on a thermal oxide layer to delimit the regions to be etched. Porous silicon is obtained afterwards using electrochemical anodization in a hydrofluoric acid (HF) solution. The effect of the temperature process on Si-HF electrochemical system voltamperometric curves, macropores morphology and electrochemical etch rates is more specifically studied. Moreover, permeation of porous substrates to hydrogen is studied after various anodization post-treatments such as KOH and HF wet etching or after a thin gold layer deposition used as current collector in micro fuel cells.
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Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu et Ya Hu. « Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells ». Journal of Physics : Conference Series 2076, no 1 (1 novembre 2021) : 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.

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Abstract Metal-assisted etching of silicon in HF aqueous solution has attracted widespread attention due to its potential applications in electronics, photonics, renewable energy, and biotechnology. In this paper, the basic process and mechanism of metal assisted electrochemical etching of silicon in vapor or liquid atmosphere based on galvanic cells are reviewed. This paper focuses on the use of gas-phase oxidants O2 and H2O2 instead of liquid phase oxidants Fe(NO3)3 and H2O2 to catalyze the etching of silicon in the vapor atmosphere of HF aqueous solution. The mechanism of substrate enhanced metal-assisted chemical etching for the preparation of large-area silicon micro nanostructure arrays is summarized, and the impact of substrate type and surface area on reactive etching is discussed.
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Huang, Z. P., N. Geyer, L. F. Liu, M. Y. Li et P. Zhong. « Metal-assisted electrochemical etching of silicon ». Nanotechnology 21, no 46 (25 octobre 2010) : 465301. http://dx.doi.org/10.1088/0957-4484/21/46/465301.

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Kolasinski, Kurt W. « Silicon nanostructures from electroless electrochemical etching ». Current Opinion in Solid State and Materials Science 9, no 1-2 (février 2005) : 73–83. http://dx.doi.org/10.1016/j.cossms.2006.03.004.

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Sundaram, K. B., et Hsiao‐Wei Chang. « Electrochemical Etching of Silicon by Hydrazine ». Journal of The Electrochemical Society 140, no 6 (1 juin 1993) : 1592–97. http://dx.doi.org/10.1149/1.2221607.

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Horányi, T. S., et P. Tüttö. « Electrochemical etching and profiling of silicon ». Applied Surface Science 63, no 1-4 (janvier 1993) : 316–21. http://dx.doi.org/10.1016/0169-4332(93)90114-q.

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Králik, Martin, et Martin Kopani. « Analysis of porous silicon structures using FTIR and Raman spectroscopy ». Journal of Electrical Engineering 74, no 3 (1 juin 2023) : 218–27. http://dx.doi.org/10.2478/jee-2023-0028.

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Abstract This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.
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Hassan, Mariam M., Makram A. Fakhri et Salah Aldeen Adnan. « Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications ». Defect and Diffusion Forum 398 (janvier 2020) : 29–33. http://dx.doi.org/10.4028/www.scientific.net/ddf.398.29.

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Porous silicon (n-PS) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. We studies the structure, surface morphology, pore diameter, roughness, based on (XRD), (AFM), (SEM) at different etching time (5, 10 min) and current (10mA/cm2).
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Hao, Xiuchun, Peiling He et Xin Li. « Selective electrochemical etching of cantilever-type SOI-MEMS devices ». Nanotechnology and Precision Engineering 5, no 2 (1 juin 2022) : 023003. http://dx.doi.org/10.1063/10.0010296.

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It is possible to achieve selective electrochemical etching between different materials, such as p- and n-type silicon. However, achieving selective electrochemical etching on two different regions of the same p-type silicon material is a problem that has rarely been considered. Herein, a novel selective electrochemical etching technique for cantilever-type silicon-on-insulator (SOI) wafer-based microswitches is proposed. In this study, a p-type handle layer was selectively etched, and a p-type device layer was passivated. This was achieved using a circuit with two voltage sources: voltages of −1.2 and 0 V were applied to the handle and device layers, respectively. It was found that the proposed etching process can effectively prevent the in-use sticking of a cantilever-type switch. This is accomplished by increasing the gap between the device layer and its underlying handle layer and increasing the roughness of these layers. The technique is applicable to the fabrication of various cantilever-type SOI microelectromechanical systems, irrespective of the resistivity of the SOI wafer.
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CHUAH, L. S., Z. HASSAN, F. K. YAM et H. ABU HASSAN. « STRUCTURAL AND OPTICAL FEATURES OF POROUS SILICON PREPARED BY ELECTROCHEMICAL ANODIC ETCHING ». Surface Review and Letters 16, no 01 (février 2009) : 93–97. http://dx.doi.org/10.1142/s0218625x09012342.

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Porous silicon (PS) samples were prepared by electrochemical anodic etching of n-type (111) silicon wafers in HF solution. The structural, optical, and chemical features of the PS were investigated in terms of different etching durations. The porous samples were investigated by scanning electron microscopy (SEM), photoluminescence (PL), and Raman scattering. SEM images indicated that the pores increased with the etching duration; however, the etching duration has significant effect on the shape of the pores. PL measurements revealed that the porosity-induced PL intensity enhancement was only observed in the porous samples. Raman spectra showed shifting of PS Raman peak to lower frequency relative to non-porous silicon Raman peak.
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Lee, Soohong, et Eunjoo Lee. « Characterization of Nanoporous Silicon Layer to Reduce the Optical Losses of Crystalline Silicon Solar Cells ». Journal of Nanoscience and Nanotechnology 7, no 11 (1 novembre 2007) : 3713–16. http://dx.doi.org/10.1166/jnn.2007.019.

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Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated using SEM. The formation of a nanoporous Si layer on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900 nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.
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Lee, Soohong, et Eunjoo Lee. « Characterization of Nanoporous Silicon Layer to Reduce the Optical Losses of Crystalline Silicon Solar Cells ». Journal of Nanoscience and Nanotechnology 7, no 11 (1 novembre 2007) : 3713–16. http://dx.doi.org/10.1166/jnn.2007.18058.

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Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated using SEM. The formation of a nanoporous Si layer on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900 nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.
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BEYDOUN, Nour, Mihai LAZAR et Xavier GASSMANN. « SiC Plasma and Electrochemical Etching for Integrated Technology Processes ». Romanian Journal of Information Science and Technology 2023, no 2 (27 mars 2023) : 238–46. http://dx.doi.org/10.59277/romjist.2023.2.10.

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This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and
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Su, Mingru, Shuai Liu, Jinlin Li, Aichun Dou, Weihang Feng, Jinchuan Bai et Yunjian Liu. « Effect of Hydrofluoric Acid Etching on Performance of Si/C Composite as Anode Material for Lithium-Ion Batteries ». Journal of Nanomaterials 2018 (17 octobre 2018) : 1–6. http://dx.doi.org/10.1155/2018/3930812.

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The effect of hydrofluoric acid (HF) etching on the performance of Si/C anode was extensively studied in terms of the structural stability, morphology, element distribution, and electrochemical properties. XRD results show that the diffraction peaks of silicon got weakened after being etched by HF. SEM images reveal that the morphology of the composite became coarse after being etched by HF. EDS mapping illustrates the distribution of elements before and after HF etching. Electrochemical studies show that HF etching can improve the cycling performance of Si/C composite but exhibit a deleterious effect on capacity. The results indicate that HF etching could be a promising method for enhancing the performance of silicon-based materials.
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Ou, Wei Ying, Lei Zhao, Zhao Chen Li, Hong Wei Diao et Wen Jing Wang. « Optimization Study on Preparation of Macroporous Silicon on P-Type Silicon Substrate by Electrochemical Etching ». Advanced Materials Research 488-489 (mars 2012) : 1343–47. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.1343.

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Low cost electrochemical etching method was utilized to prepare macroporous silicon on p-type silicon substrate in dilute HF solution. By optimizing the substrate resistivity, the etching current density, and the etching time, excellent macroporous silicon was obtained on 15 Ω•cm p-type silicon substrate with the pore diameter of about 2 μm, the pore depth of about 30 μm, and the surface pore density up to ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. The low reflectance combined with the deep pore morphology provides an attractive potential to fabricate radial p-n junction solar cells on such macroporous silicon.
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Ou, Wei Ying, Lei Zhao, Zhao Chen Li, Hong Wei Diao et Wen Jing Wang. « Macroporous Silicon Fabricated by HF Electrochemical Etching for Antireflective Application in Solar Cells ». Advanced Materials Research 463-464 (février 2012) : 1410–14. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.1410.

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Macroporous silicon was fabricated by electrochemical etching in hydrogen fluoride (HF) electrolyte on P-type silicon wafers. By optimizing the etching condition, the obtained macroporous silicon presented pore diameter of about 2 μm and pore density of ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. An a-Si:H/c-Si heterojunction solar cell was fabricated on such macroporous silicon to show its application potential.
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Yusop, S. F. M., N. Azaman, Hartini Ahmad Rafaie, S. Amizam, Saifollah Abdullah et Mohamad Rusop. « Effect of Etching Time on Electrical and Optical Properties of Porous Silicon ». Advanced Materials Research 667 (mars 2013) : 397–401. http://dx.doi.org/10.4028/www.scientific.net/amr.667.397.

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The characterized on porous silicon layer by using photoluminescence (PL) and I-V measurement (I-V) has been done. Porous silicon was formed by electrochemical etching on (100) p-type Si wafer substrate with the constant current density (20mA/cm2) and variable the etching time. The samples ware prepared under various etching time and properties of porous silicon depend on an etching time. Porous silicon has been used in humidity sensors to detect humidity through changes of its electrical properties. The samples of porous silicon were characterized by using Photoluminescence Spectroscopy (PL) that used to characterize optical properties while I-V Measurement (I-V) used to characterize porous silicon junction properties using a linear voltage source. The result shows PL intensity is increase while the wavelength is decrease for etching time of PSi is longer. For the I-V measurement result shows the etching time affect the resistance of sample due to its porosity.
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GAVRILIN, E. Yu, Yu B. GORBATOV, V. V. STARKOV et A. F. VYATKIN. « TWO-DIMENSIONAL ORDERED POROUS STRUCTURES FOR PHOTONIC CRYSTALS OBTAINED USING DEEP ANODIC ETCHING AND FOCUSED ION BEAM TECHNIQUES ». International Journal of Nanoscience 03, no 01n02 (février 2004) : 81–85. http://dx.doi.org/10.1142/s0219581x04001845.

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Photonic crystals are the very promising novel materials for micro- and nanophotonics for visible region. To produce photonic crystals for this region of light, artificial structures with characteristic sizes less than 1 μm have to be manufactured. Electrochemical deep anodic etching and plasma etching techniques is normally used to produce such structures in silicon wafers. However, standard way of deep anodic etching realization is not suitable for sub-micrometer porous silicon formation. In the present work combination of the deep anodic etching and focused ion beam techniques is used to produce ordered structure of macropores in silicon.
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Abed, M. A., M. M. Uonis, G. G. Ali et I. B. Karomi. « Deposition and characterization of carbon nanotubes on porous silicon by PECVD ». Digest Journal of Nanomaterials and Biostructures 18, no 1 (20 février 2023) : 235–41. http://dx.doi.org/10.15251/djnb.2023.181.235.

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Nano porous silicon was achieved by electrochemical etching technique of current density 20 mA/cm 2 , 25% HF and etching time 15min. Carbon Nano layers have been deposited on PSi substrate by PECVD. XRD spectrum show that porous silicon has crystalline phase and becomes very broad after etching time, in addition, XRD spectrum for carbon layers show several peaks between (2θ=28.25-28.75) which belong to carbon nanotube and these peaks intensity increases with increasing of carbon thickness. Raman spectrum illustrates that peak position was at 516.32nm for porous silicon prepared at etching time 15 min.
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33

Kadhim, Ayad Jumaah, Muneer H. Jaduaa Alzubaidy et Ahmed N. Abd. « Morphological and Structural Properties of Porous Silicon (PSi) ». International Letters of Chemistry, Physics and Astronomy 81 (février 2019) : 11–17. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.81.11.

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This study includes the effect of the etching time on the morphology of the surfaces produced using the electrochemical method of silicon ( p-type), where it was found that the etching leads to increase the porosity layer of silicon. The production of nanocrystalline structures and control of their production conditions is the first step to control the properties of the devices. These are very important applications for the etching of renewable energy.
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Kadhim, Ayad Jumaah, Muneer H. Jaduaa Alzubaidy et Ahmed N. Abd. « Morphological and Structural Properties of Porous Silicon (PSi) ». International Letters of Chemistry, Physics and Astronomy 81 (1 février 2019) : 11–17. http://dx.doi.org/10.56431/p-3vjl65.

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This study includes the effect of the etching time on the morphology of the surfaces produced using the electrochemical method of silicon ( p-type), where it was found that the etching leads to increase the porosity layer of silicon. The production of nanocrystalline structures and control of their production conditions is the first step to control the properties of the devices. These are very important applications for the etching of renewable energy.
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35

Zhang, Jing, Faqiang Zhang, Mingsheng Ma et Zhifu Liu. « Fabrication of Highly Ordered Macropore Arrays in p-Type Silicon by Electrochemical Etching : Effect of Wafer Resistivity and Other Etching Parameters ». Micromachines 16, no 2 (28 janvier 2025) : 154. https://doi.org/10.3390/mi16020154.

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Macroporous silicon is a promising substrate in the field of optics, electronics, etc. In this paper, highly ordered macropore arrays were fabricated in p-type silicon wafers by electrochemical etching using a double-tank cell. The effect of the silicon resistivity, etching voltage and etching time on the pore morphology was investigated and the influence mechanism was analyzed. The pore diameter would decrease with the increase in the silicon resistivity and the decrease in the etching voltage, due to the increase in the space charge region width (SCRL). The pore depth would increase with the resistivity and the voltage. However, too high resistivity would cause insufficiency at the pore tips and too high voltage would cause pore splitting, which may cause a decrease in the pore depth. Then, the aspect ratio of 21 can be obtained on the silicon wafer with a resistivity of 50–80 Ω·cm at the etching voltage of 5 V with a maximum etching rate of about 0.92 μm/min.
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36

Abramova, E. N., A. M. Khort, A. G. Yakovenko, Yu V. Syrov, V. N. Tsigankov, E. A. Slipchenko et V. I. Shvets. « Peculiarities of pore initiation in р-type silicon during its electrochemical etching ». Доклады Академии наук 487, no 1 (19 juillet 2019) : 32–35. http://dx.doi.org/10.31857/s0869-5652487132-35.

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Peculiarities of porous silicon layers formation during electrochemical etching of p-type silicon were studied. Principal divisions of pore formation mechanisms in n-type and p-type of silicon were demonstrated.
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Li, Xiao Na, Guo Zheng Wang, Feng Yuan Yu, Yao Zhang, Yong Zhao Liang, Jin Chai, Ji Kai Yang et Qing Duo Duanmu. « Current Automatic Control Technology for n-Type Macroporous Silicon Photo-Electrochemical Etching ». Applied Mechanics and Materials 423-426 (septembre 2013) : 113–16. http://dx.doi.org/10.4028/www.scientific.net/amm.423-426.113.

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The relationship between the etching current density and the macropore diameter was studied in the macroporous silicon (MPS) photo-electrochemical (PEC) etching. By measuring the depth of the channel with different etching time, the variation of critical current density with time was calculated. The importance to real-time adjust the etching current was discussed in the etching process. Based on the PSoC chip, an automatic control system for etching current was designed. The MPS growth was realized with the pore diameter constant using the automatic control system for etching current with a pre-set curve of etching current versus time.
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38

Amjad Hussein Jassem. « Effect of photo chemical etching and electro chemical etching on the topography of porous silicon wafers surfaces ». Tikrit Journal of Pure Science 24, no 4 (4 août 2019) : 52–56. http://dx.doi.org/10.25130/tjps.v24i4.399.

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In This research we study the effect of photo chemical etching and electrochemical etching on topography of porous silicon surfaces, the results showed that photo chemical etching produced roughness silicon layer which can have thickness be less of porous silicon layer which is produced by electro chemical etching When all the wafers have same etching time and hydrofluoric solution (HF) concentration, the wafers have same resistance (10 Ω.cm). Also the results showed the roughness of porous silicon layers produced by electro chemical method which is bigger than the roughness of porous silicon layers produced by photo chemical method and the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by electro chemical method (1.55(µm) ((0.99(µm)) and ((1.21(µm) respectively), the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by photo chemical method 0.63)) nm -1.55)) (µm) ),so the (84.9 (nm)- and (3.94(nm) respectively . This is reinforces because of using the electro chemical to etching the wafer surf ace of bulk silicon and changing it to roughness silicon surface be share in success of many practicalities.
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39

LIU, FENG-MING, BIN REN, JIA-WEI YAN, BING-WEI MAO et ZHONG-QUN TIAN. « IN SITU PHOTOLUMINESCENCE STUDIES OF SILICON SURFACES DURING PHOTOELECTROCHEMICAL ETCHING PROCESSES ». Surface Review and Letters 08, no 03n04 (juin 2001) : 327–35. http://dx.doi.org/10.1142/s0218625x01001129.

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The photoluminescence (PL) from silicon surfaces during photoelectrochemical etching processes was monitored in situ by using a confocal microprobe spectrometer. The etching time, laser power, polarization potential and the resistance of silicon were found to remarkably influence the formation of porous silicon (PS). For the high resistance silicon sample, the PL band intially increases in intensity and blueshifts with the progress of etching, then decreases and stops shifting. The higher the laser power is, the stronger the PL intensity and the shorter the wavelength could be. For the low resistance silicon sample, no clear shift in the wavelength could be found with the progress of etching. These results were interpreted by the quantum confinement effect together with the influence of electrochemical reaction equilibrium and the surface oxidation species on the formation of PS.
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40

Zhao, Mingrui, Rajesh Balachandran, Zach Patterson, Roman Gouk, Steven Verhaverbeke, Farhang Shadman et Manish Keswani. « Contactless bottom-up electrodeposition of nickel for 3D integrated circuits ». RSC Advances 5, no 56 (2015) : 45291–99. http://dx.doi.org/10.1039/c5ra03683f.

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Electrochemical oxidation of silicon by water generates electrons and subsequent chemical etching of silicon dioxide by fluoride based species regenerates the surface. The electrons are conducted through bulk silicon and accepted by nickel ions.
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41

Ptashchenko, Fedor. « Electrochemical etching of porous silicon – DFT modeling ». Computational Materials Science 198 (octobre 2021) : 110695. http://dx.doi.org/10.1016/j.commatsci.2021.110695.

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42

Astrova, E. V., et A. A. Nechitaĭlov. « Boundary effect in electrochemical etching of silicon ». Semiconductors 42, no 4 (avril 2008) : 470–74. http://dx.doi.org/10.1134/s1063782608040179.

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43

Hwang, Yongha, O. H. Paydar, M. Ho, J. B. Rosenzweig et R. N. Candler. « Electrochemical macroporous silicon etching with current compensation ». Electronics Letters 50, no 19 (septembre 2014) : 1373–75. http://dx.doi.org/10.1049/el.2014.1662.

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44

Huster, R., et A. Stoffel. « Vertically structured silicon membrane by electrochemical etching ». Sensors and Actuators A : Physical 23, no 1-3 (avril 1990) : 899–903. http://dx.doi.org/10.1016/0924-4247(90)87055-n.

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45

Antunez, E. E., J. O. Estevez, J. Campos, M. A. Basurto et V. Agarwal*. « Effect of magnetic field on the formation of macroporous silicon : structural and optical properties ». MRS Proceedings 1617 (2013) : 63–68. http://dx.doi.org/10.1557/opl.2013.1165.

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ABSTRACTThe conventional method to fabricate porous silicon with n-type substrates requires light assisted generation of holes used in the electrochemical reaction. Recently, two different methods have been proposed to fabricate some similar structures: Hall effect [1] and lateral electrical field [2]. Hall effect assisted etching involves the application of a perpendicular electric and magnetic field to achieve the concentration of holes at the HF/silicon interface to assist the electrochemical reaction, while the other involves the application of a lateral electrical field across the silicon wafer. In this work, the electrochemical etching of high resistivity n-type silicon wafers under the combined effect of magnetic and lateral electrical field to produce photoluminescent macroporous structures under dark conditions, is reported. A lateral gradient in pore sizes as well as in light emission is observed. Optical and structural properties were studied for their possible applications as a biosensor.
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46

Taurbayev, Y. T., K. A. Gonchar, A. V. Zoteev, Victor Timoshenko, Z. Zh Zhanabayev, V. E. Nikulin et T. I. Taurbayev. « Electrochemical Nanostructuring of Semiconductors by Capillary-Cell Method ». Key Engineering Materials 442 (juin 2010) : 1–6. http://dx.doi.org/10.4028/www.scientific.net/kem.442.1.

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Wafers of silicon and compound semiconductors are nanostructured by using electrochemical or chemical etching (stain etching) in etching cell with electrolyte kept by capillary forces. Atomic force microscopy, infrared spectroscopy and Raman scattering methods reveale nanoporous and nanocrystalline structure of the treated surfaces. The formed porous semiconductors demonstrate efficient photoluminescence, which is controlled by etching parameters, i.e. current density, electrolyte content, etc. These results indicate good prospects of the employed capillary-cell method for preparing nanostructured porous materials with desired structure and optical properties.
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47

ISMAIL, RAID A. « EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUS Si DEVICES ». Modern Physics Letters B 27, no 30 (21 novembre 2013) : 1350217. http://dx.doi.org/10.1142/s0217984913502175.

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In this paper, we report the effect of etching time on the morphological, structural and electrical properties of porous silicon ( PSi ) synthesized by electrochemical anodization of low resistivity p-type crystalline silicon at current density of 15 mA/cm2. Atomic force microscopy (AFM) measurements showed that the square root of roughness is increased with etching time. Scanning electron microscopy (SEM) investigations revealed that the microstructure of porous silicon is varying with etching time and pores from nano-size to micro-size were formed. Energy dispersive X-ray (EDX) analysis confirmed that the amount of oxygen increases with etching time. Porosity and thickness estimated gravimetrically showed a dependence on the anodization time. The room temperature dark electrical resistivity of porous silicon has observed to be increased with etching time. X-ray photoelectron spectroscopy (XPS) analysis of synthesized porous silicon has shown peaks of C 1s, Si 2p, O 1s, F 1s and N 1s. Current–voltage (I–V) characteristics of synthesized Al / PSi /c -Si junctions prepared at different etching times are investigated and analyzed. The ideality factor, barrier height and built-in potential of porous silicon junctions were strongly found to be dependent on the etching time.
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48

Hadi, Hasan A. « Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE) ». International Letters of Chemistry, Physics and Astronomy 72 (janvier 2017) : 28–36. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.72.28.

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In this work, porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time on the electrical properties of porous silicon is checked using Current–voltage I–V characteristics. The ideality factor and dynamic resistances are found to be large than the one and 20 (kΩ) respectively by the analysis of the dark I–V characteristics of Al/PS/p-Si heterojunction.
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Hadi, Hasan A. « Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE) ». International Letters of Chemistry, Physics and Astronomy 72 (27 janvier 2017) : 28–36. http://dx.doi.org/10.56431/p-65kuo9.

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In this work, porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time on the electrical properties of porous silicon is checked using Current–voltage I–V characteristics. The ideality factor and dynamic resistances are found to be large than the one and 20 (kΩ) respectively by the analysis of the dark I–V characteristics of Al/PS/p-Si heterojunction.
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Tomaa, Ghasaq Ali, et Alaa Jabbar Ghazai. « The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films ». Iraqi Journal of Physics (IJP) 19, no 50 (1 septembre 2021) : 77–83. http://dx.doi.org/10.30723/ijp.v19i50.665.

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Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.
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