Articles de revues : « GaAs-4H »

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Cheiwchanchamnangij, Tawainan, Thomas Birkel, Walter R. L. Lambrecht et Al L. Efros. « GaAs Nanowires : A New Place to Explore Polytype Physics ». Materials Science Forum 717-720 (mai 2012) : 565–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.565.

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Recently, polytypism has been observed in nanowires in materials, for which normally only one crystal structure is stable. For example, GaAs, nanowires can have wurtzite or mixed zincblende/wurtzite. Here we provide band structure parameters for wurzite and 4H GaAs and use them for modeling the nanowire electronic states. The band gap, crystal field splitting, and its strain dependence, as well as the effective mass parameters are calculated using the quasiparticle self-consistent GW method. The nanowire electronic states are obtained in the envelope function approximation within a simplified cylindrical model. The crystal field splitting of the wurtzite GaAs valence band is found to be 180 meV while in 4H-GaAs it is less than half 69 meV, suggesting a downward bowing as function of hexagonality. The conduction band minimum at Γ changes symmetry character under strain. We discuss the consequences for nanowires and determine the conditions under which a polarization reversal of photoluminescence can occur from mostly perpendicular to parallel to the wire.

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Iype, Preethi Elizabeth, V. Suresh Babu et Geenu Paul. « Thermal and Electrical Performance of AlGaAs/GaAs based HEMT device on SiC substrate ». Journal of Physics : Conference Series 2070, n^o 1 (1 novembre 2021) : 012057. http://dx.doi.org/10.1088/1742-6596/2070/1/012057.

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Abstract In this paper investigation on electrical and thermal performance of the AlGaAs/GaAs HEMT device is carried out by comparing the device grown on substrates like 4H-SiC and Sapphire. The investigation was carried out based on Silvaco TCAD Atlas simulation. The DC characteristics of the device with varying ambient temperature were evaluated. A deterioration of drain current from 0.9 mA to 0.5 mA is observed as temperature rises from 300K to 500K on 4H-SiC substrate. The HEMT grown on 4H-SiC substrate has a high power dissipation, resulting in reduced temperature compared to sapphire substrate. This increases the lifetime of the device by 1000s of hours and also its overall performance. The HEMT proposed here is found to have an electrically and thermally optimal performance on 4H-SiC substrate than on sapphire

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Asfour, Rawad, Salam K. Khamas, Edward A. Ball, Jo Shien Ng, Guanwei Huang, Rozenn Allanic, Denis Le Berre, Cédric Quendo, Aude Leuliet et Thomas Merlet. « On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band ». Sensors 24, n^o 2 (5 janvier 2024) : 321. http://dx.doi.org/10.3390/s24020321.

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This paper presents a comprehensive assessment of the performance of on-chip circularly polarized (CP) circular loop antennas that have been designed and fabricated to operate in the Q/V frequency band. The proposed antenna design incorporates two concentric loops, with the outer loop as the active element and the inner loop enhancing the CP bandwidth. The study utilizes gallium arsenide (GaAs) and silicon carbide (4H-SiC) semiconductor wafer substrates. The measured results highlight the successful achievement of impedance matching at 40 GHz and 44 GHz for the 4H-SiC and GaAs substrates, respectively. Furthermore, both cases yield an axial ratio (AR) of less than 3 dB, with variations in bandwidths and frequency bands contingent upon the dielectric constant of the respective substrate material. Moreover, the outcomes confirm that utilizing 4H-SiC substrates results in a significantly higher radiation efficiency of 95%, owing to lower substrate losses. In pursuit of these findings, a 4-element circularly polarized loop array antenna has been fabricated for operation at 40 GHz, employing a 4H-SiC wafer as a low-loss substrate. The results underscore the antenna’s remarkable performance, exemplified by a broadside gain of approximately 9.7 dBic and a total efficiency of circa 92%. A close agreement has been achieved between simulated and measured results.

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Liang, J., S. Shimizu, M. Arai et N. Shigekawa. « Determination of Band Structure at GaAs/4H-SiC Heterojunctions ». ECS Transactions 75, n^o 9 (23 septembre 2016) : 221–27. http://dx.doi.org/10.1149/07509.0221ecst.

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Tongay, S., T. Schumann et A. F. Hebard. « Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates ». Applied Physics Letters 95, n^o 22 (30 novembre 2009) : 222103. http://dx.doi.org/10.1063/1.3268788.

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Ghivela, Girish Chandra, Joydeep Sengupta et Monojit Mitra. « Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC-based IMPATT diode ». International Journal of Electronics Letters 7, n^o 1 (6 avril 2018) : 107–16. http://dx.doi.org/10.1080/21681724.2018.1460869.

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Sriram, S., A. Ward, J. Henning et S. T. Allen. « SiC MESFETs for High-Frequency Applications ». MRS Bulletin 30, n^o 4 (avril 2005) : 308–11. http://dx.doi.org/10.1557/mrs2005.79.

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AbstractSignificant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junction temperature of 410°C. A sampling of these devices has also been running for over 5000 h in an rf high-temperature operating-life test, with negligible changes in performance. High-power SiC MMIC amplifiers have also been demonstrated with excellent yield and repeatability. These MMIC amplifiers show power performance characteristics not previously available with conventional GaAs technology. These developments have led to the commercial availability of SiC rf power MESFETs and to the release of a foundry process for MMIC fabrication.

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Sharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi et N. Ummal Salmaan. « Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics ». International Journal of Polymer Science 2022 (13 septembre 2022) : 1–10. http://dx.doi.org/10.1155/2022/8331886.

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Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch. But, when flexible polymers composites like Si-nanomembranes, polyethylene terephthalate (PET), and biodegradable polymer composite like carbon nanotubes (CNT) are used for fabrication, the device has the capability to switch from rigid electronic devices to flexible and wearable electronic devices. These polymer composites’ outstanding characteristics like conductivity, charge selectivity, flexibility, and lightweight make them eligible for their selection in fabrication process for wearable electronics devices. In this article, the performance of PIN diodes (BAR64-02) as an RF switch is investigated from 1 to 10 GHz. PIN diodes can control large amounts of RF power at very low DC voltage, implying their suitability for RF applications. In this paper, the benefit of using plastic polymer composites for the fabrication of PIN diodes, capacitors, and antennas is thoroughly described. Along with this, individual characterization, fabrication, and testing of all biasing components are also done to analyze the individual effect of each biasing component on the performance of PIN diodes. The complete biasing circuitry for the PIN diode is modeled in the HFSS software. When a PIN diode is inserted in between 50 Ω microstrip line, it introduces 1 dB insertion loss and 20 dB isolation loss from 1 to 7 GHz. Finally, a PIN diode is integrated in a reconfigurable antenna to study the actual effect. The transmission loss in the RF signal is nearly 1 dB from 1 to 7 GHz in the presence of biasing components.

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Ghivela, Girish Chandra, Joydeep Sengupta et Monojit Mitra. « Space Charge Effect of IMPATT Diode Using Si, Ge, GaAs, InP, WzGaN and 4H-SiC at Ka-Band ». IETE Journal of Education 58, n^o 2 (3 juillet 2017) : 61–66. http://dx.doi.org/10.1080/09747338.2017.1378132.

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Sedlačková, Katarína, Bohumír Zat'ko, Andrea Šagátová, Vladimír Nečas, Pavol Boháček et Mária Sekáčová. « Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detectors covered by LiF film for thermal neutron detection ». Applied Surface Science 461 (décembre 2018) : 242–48. http://dx.doi.org/10.1016/j.apsusc.2018.05.121.

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Vincent, Laetitia, Marcel A. Verheijen, Wouter Peeters, Hassan Melhem, Theo Van den Berg, Hafssa Ameziane, Gilles Patriarche et al. « Epitaxy of Hexagonal Ge-2H : Lessons from in Situ TEM Observations ». ECS Meeting Abstracts MA2024-02, n^o 32 (22 novembre 2024) : 2340. https://doi.org/10.1149/ma2024-02322340mtgabs.

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Silicon and Germanium crystallize in the cubic diamond structure 3C with which they dominate definitely the electronics. Playing on crystal phases in semiconductors occurs to be a valuable mean of electronic band engineering. Remarkably, the hexagonal 2H phase of SiGe turns to get a direct band gap with light emission capabilities within a specific composition range (Si<35%). This material holds the promise to fill the gap between electronics and photonics industry using group IV semiconductors. We use GaAs NWs with the wurtzite structure as a template to create both (1) core/shell and (2) trunk/nanobranches heterostructures [2,3]. The GaAs-wurtzite is an ideal template to copy the structure by epitaxy forcing the Ge to adopt the hexagonal crystal phase and in turn it is used here as a textbook case The growths are followed using the in situ TEM NANOMAX. This unique microscope can be implemented either with molecular beam epitaxy (MBE) sources or with a gas injector for chemical vapor deposition (CVD). Real time TEM observations at the atomic scale show the fundamental aspects of the epitaxy and the formation of growth-related staking faults in Ge-2H. 1) On core/shell configuration[1], depending on growth conditions, different growth regimes highly impact the crystal quality of the of Ge-2H shell. On {1-100} prismatic surfaces, a regular step flow supports a flat surface and a perfect replication of the hexagonal structure However, when the step flow is destabilized, original intrinsic I3 basal stacking faults (BSF) are formed during growth. We evidence their correlation with the growth modes related to surface diffusion. Understanding the nucleation of these defects is necessary to prevent their formation during epitaxy. Possible scenarios of I3 BSF formation are discussed. Theses defects show a faulted stacking ABACABAB with only one faulted basal plane bounded by a pair of partial dislocations along <11-20> with opposite Burger vectors b=+/-1/3<1-100>. Thermal annealing induces a motion of the dislocation and an expansion of the I3 BSF resulting in a 4H stacking in the core/shell structure. 2) On wurtzite GaAs nanowires, Au catalysts are deposited on the sidewalls. Nanobranches grow with an axial direction along <1-100> and exhibit a hexagonal crystal structure[2] . With in situ observations, we study the VLS and VSS growths of Au catalyzed Ge-2H branches depending on the growth temperature. [1] L. Vincent et al. Adv. Mat. Inter. 9-16 (2022) 2102340, doi.org/10.1002/admi.202102340 [2] A Li et al. Nanotechnology 34 (2023) 015601 doi: 10.1088/1361-6528/ac9317 Figure 1

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Mouneyrac, David, John G. Hartnett, Jean-Michel Le Floch, Michael E. Tobar, Dominique Cros et Jerzy Krupka. « Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperatures ». Journal of Applied Physics 108, n^o 10 (15 novembre 2010) : 104107. http://dx.doi.org/10.1063/1.3514009.

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Moore, Karen, et Robert J. Trew. « Radio-Frequency Power Transistors Based on 6H- and 4H-SiC ». MRS Bulletin 22, n^o 3 (mars 1997) : 50–56. http://dx.doi.org/10.1557/s0883769400032760.

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In recent years, SiC has received a great deal of attention as a nearly ideal material for the fabrication of high-speed, high-power transistors. The high electric breakdown field of 3.8 × 106 V/cm, high saturated electron drift velocity of 2 × 107 cm/s, and high thermal conductivity of 4.9 W/cm K indicate SiC's potential for high-power, high-frequency operation. A wide bandgap should also allow SiC field-effect transistors (FETs) to have high radio-frequency (rf) output power at high temperatures.These material qualities have been verified through outstanding device performance. Recent results for SiC metal-semiconductor field-effect transistors (MESFETs) have included superior frequency and power performance, with power gain at frequencies as high as 40 GHz and power densities as high as 3.3 W/mm. This represents significantly higher operating frequencies and power densities than current Si rf power FET technology, and nearly three times the power density of GaAs MESFETs, which are currently used in many commercial rf power applications. Similarly, SiC static induction transistors (SITs) have much higher power densities than their Si counterparts and have recently been demonstrated in modules with as much as 470-W total pulsed output power. This article describes microwave device operation, discusses material properties needed for rf power generation, and summarizes state-of-the-art SiC high-frequency device performance. Emphasis is placed on MESFETs and SITs since they are currently the most mature SiC-based device technologies.

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Chakravorty, Anusmita, Alexandre Boulle, Aurélien Debelle, Gouranga Manna, Pinku Saha, D. Kanjilal et Debdulal Kabiraj. « Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC ». Journal of Applied Physics 136, n^o 3 (17 juillet 2024). http://dx.doi.org/10.1063/5.0205284.

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Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct displacement-related defect formation, anticipated from the elastic energy loss of Ar ions, can well explain the irradiation-induced strain depth profiles. The maximum strain in GaAs is evaluated to be 0.88% after Ar irradiation. The unique energy loss depth profile of 100 MeV Ag (swift heavy ions; SHIs) and resistance of pristine 4H-SiC and GaAs to form amorphous/highly disordered ion tracks by ionization energy loss of monatomic ions allow us to examine strain buildup due to the concentrated displacement damage by the elastic energy loss near the end of ion range (∼12 μm). Interestingly, for the case of SHIs, the strain-depth evolution requires consideration of recovery by ionization energy loss component in addition to the elastic displacement damage. For GaAs, strain builds up throughout the ion range, and the maximum strain increases and then saturates at 0.37% above an ion fluence of 3×1013 Ag/cm2. For 4H-SiC, the maximum strain reaches 4.6% and then starts to recover for fluences above 1×1013 Ag/cm2. Finally, the contribution of irradiation defects and the purely mechanical contribution to the total strain have been considered to understand the response of different compounds to ion irradiation.

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Das, Subhashis, Nirosh M. Eldose, Hryhorii Stanchu, Fernando Maia de Oliveira, Mourad Benamara, Yuriy I. Mazur, Zhong Chen, Alan Mantooth et Gregory J. Salamo. « Epitaxial growth and characterization of GaAs (111) on 4H-SiC ». Journal of Vacuum Science & ; Technology A 42, n^o 4 (6 mai 2024). http://dx.doi.org/10.1116/6.0003454.

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SiC is an indirect bandgap semiconductor with material properties ideal for power electronics but not so much as an optical emitter. Meanwhile, gallium arsenide (GaAs) is a material known for high-performance optical devices due to its direct bandgap and carrier lifetime. Integrating GaAs with silicon carbide (SiC) can result in the best of both materials. However, integrating the two presents a significant challenge due to the large lattice mismatch between the two materials. In this paper, we investigate the growth of high-quality GaAs directly on 4H-SiC and on AlAs/4H-SiC substrates. The thin films were characterized using key techniques for structural and optical analyses, such as x-ray diffraction, atomic force microscopy, and photoluminescence (PL) spectroscopy. The 3D-island nature of growth of GaAs directly on SiC results in weak in-plane correlation with the substrate but high photoluminescence. This was demonstrated with an observed PL intensity comparable to the PL observed from a GaAs substrate with a similar buffer layer. Introduction of a thin AlAs nucleation layer results in improved wetting of the substrate, better in-plane correlation with substrate, and overall improved crystalline quality and is now under further study.

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Liang, Xinchao, Chuang Hou, Zenghui Wu, Zitong Wu et Guoan Tai. « Multilayer α′-4H-Borophene Growth on Gallium Arsenide towards High-Performance Near-Infrared Photodetector ». Nanotechnology, 8 février 2023. http://dx.doi.org/10.1088/1361-6528/acba1e.

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Abstract Multilayer borophene was predicted to have a similar semiconductor property to its monolayer arise from the weak van der Waals interactions between the layers. Besides, multilayer borophene has a higher carrier mobility than monolayer ones, so it is placed great hopes in applications of photoelectric and photovoltaic devices. However, its preparation and application in experiments of multilayer borophene are still lacking. Here, multilayer α′-4H-borophene was synthesized on semiconducting n-type GaAs substrates using NaBH4 source as precursor and hydrogen as the carrier gas under controlled temperature and pressure conditions. The experimental results of the borophene are in good agreement with those of its theoretical prediction. The borophene is a semiconductor with a bandgap of 2.48 eV. To demonstrate the device application potential of the borophene, a near-infrared photodetector composed of p-type borophene and n-type GaAs was fabricated. The photodetector shows a high photoresponsivity of 0.31 mA•W-1, a high specific detectivity of 108 Jones, and a fast response or recovery speed of 117 or 109 ms under the irradiation with the wavelength of 940 nm at zero bias. The results prove that the α′-4H-borophene/GaAs photodetector can show high sensitivity and zero consumption, which is of great value in meeting the appeal of sustainable development of society.

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Tuominen, M., R. Yakimova, R. C. Glass, T. Tuomi et E. Janzén. « Investigation of Structural Defects in 4H SiC Wafers ». MRS Proceedings 339 (1994). http://dx.doi.org/10.1557/proc-339-729.

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ABSTRACTFor high-power device applications SiC has better physical and electronic properties than the traditional semiconductor materials Si and GaAs. In this work, structural defects of 4H SiC wafers have been studied and partly compared with results from a previous study of 6H material. Optical microscopy, scanning electron microscopy, high-resolution X-ray diffraction and synchrotron X-ray topography were used for structural studies of 4H SiC.Optical micrographs show micropipes and larger specific defects - tubes and cracks. X-ray rocking curve peaks are broad and split revealing the mosaicity of the material. Synchrotron X-ray topographs show areas having a large number of defects, images of cracks and micropipes, and misorientated regions close to the micropipes.

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« Determination of Band Structure at GaAs/4H-SiC Heterojunctions ». ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-02/32/2095.

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Palmour, John W., C. H. Carter, C. E. Weitzel et K. J. Nordquist. « High Power and High Frequency Silicon Carbide Devices ». MRS Proceedings 339 (1994). http://dx.doi.org/10.1557/proc-339-133.

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ABSTRACTThe breakdown electric field of 4H-SiC as a function of doping was measured using pn junction rectifiers, with maximum voltages of 1130 V being achieved. 4H-SiC vertical power MOSFET structures have shown specific on-resistances of 33 mΩ-cm2 for devices capable of blocking 150 V. A current density of 100 A/cm2 was achieved at a drain voltage of 3.3 V. Thyristors fabricated in SiC have also shown blocking voltages of 160 V and 100 A/cm2 at 3.0 V. High temperature operation was measured, with the power MOSFETs operating to 300°C, and the thyristors operating to 500°C.Submicron 6H- and 4H-SiC MESFETs have shown good I-V characteristics to Vd= 40 V, with an Idss of 200–300 mA/mm. The maximum operating frequencies (fmax) achieved for 6H-SiC MESFETs is 13.8 GHz, with small-signal power gains of 9.8 dB and 2.9 dB at 5 GHz and 10 GHz, respectively. 4H-SiC MESFETs have demonstrated an RF output power density of 2.8 W/mm at 1.8 GHz. This is the highest power density ever reported for SiC and is 2–3 times higher than reported for comparable GaAs devices.

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Coleman, J. C., G. L. Harris et D. B. Poker. « Beta Silicon Carbide Pn Junction Diodes ». MRS Proceedings 423 (1996). http://dx.doi.org/10.1557/proc-423-207.

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AbstractBeta silicon carbide (3C-SiC) diodes have been fabricated using ion implantation as the selective doping technique. Previous work on 3C-SiC diodes have exhibited properties such as low reverse breakdown voltages and high ideality factors. Also, 6H and 4H SiC diodes have been reported. This paper studies a different procedure to produce better 3C-SiC diodes for use in the electronics industry. Current versus voltage, capacitance versus voltage and temperature versus voltage tests were conducted on the devices.Isolation between devices is a prominent concern when building integrated circuits. Proton bombardment is the preferred planar process for forming isolation regions in gallium arsenide (GaAs) due to the lack of a stable native oxide. Hydrogen and boron in GaAs have exhibited good electrical isolation between devices. This paper investigates using proton bombardment to form isolation regions in 3C-SiC. Cubic SiC samples are implanted with a variety of implant doses, ranging from 1 × 1014 to 1 × 1015 ions / cm2 , and implant energies ranging from 150 to 300 keV. Hall measurement tests were performed to study the characteristics of the implanted material.

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Tucker, J. B., R. A. Beaupre, A. P. Zhang, J. L. Garrett, L. B. Rowland, E. B. Kaminsky, J. W. Kretchmer et al. « Electrical Instability Suppression in 4H-SiC Power MESFETs ». MRS Proceedings 742 (2002). http://dx.doi.org/10.1557/proc-742-k7.4.

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ABSTRACTSiC has attracted great interest for high power microwave applications because of its superior intrinsic properties compared to Si and GaAs. Steady demonstrations of increasingly higher power handling capability have been achieved in recent years. However, SiC MESFETs still suffer from significant drain current degradation under RF operation or long-term DC stress. This degradation can be recovered after long periods of relaxation or immediately by illumination under UV light, which is indicative of a trapping effect. The origin of this effect has been attributed to either electron trapping at the device surface between the gate and drain or trapping at the epi-substrate interface due to the presence of electrically active contaminants in the bulk. Newly available “high purity” (non-vanadium compensated) bulk 4H semi-insulating SiC substrates were used in an effort to limit the effect of V-related deep level trapping at the substrate/epilayer interface. To investigate the effect of V on SiC MESFET performance, we compare similar devices fabricated on V compensated, and “high-purity” 4H-SiC substrates without intentional V doping. Presence or absence of V is confirmed by secondary ion mass spectrometry (SIMS) analysis. Pulsed I-V measurements as well as current- and capacitance-based deep level transient spectroscopy (DLTS) measurements were performed to assess trapping activation energy and density. An assessment of device performance and stability for each substrate type is made using RF load-pull measurements and device long-term DC bias stressing at temperature.

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Xie, Han, Ru Jia, Yonglin Xia, Lei Li, Yue Hu, Jiaxuan Xu, Yufei Sheng, Yuanyuan Wang et Hua Bao. « An ab initio dataset of size-dependent effective thermal conductivity for advanced technology transistors ». Chinese Physics B, 6 mars 2025. https://doi.org/10.1088/1674-1056/adbd13.

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Abstract As the size of transistors shrinks and power density increases, thermal simulation has become an indispensable part of the device design procedure. However, existing works for advanced technology transistors use simplified empirical models to calculate effective thermal conductivity in the simulations. In this work, we present a dataset of size-dependent effective thermal conductivity with electron and phonon properties extracted from ab initio computations. Absolute in-plane and cross-plane thermal conductivity data of eight semiconducting materials (Si, Ge, GaN, AlN, 4H-SiC, GaAs, InAs, BAs) and four metallic materials (Al, W, TiN, Ti) with the characteristic length ranging from 5 to 50 nanometers have been provided. Besides the absolute value, normalized effective thermal conductivity is also given, in case it needs to be used with updated bulk thermal conductivity in the future. The dataset presented in this paper are openly available at https://doi.org/10.57760/sciencedb.j00113.00154 (https://www.scidb.cn/s/nIZ7Rb).

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Casady, J. B., A. K. Agarwal, L. B. Rowland, S. Seshadri, R. R. Siergiej, S. S. Mani, D. C. Sheridan, P. A. Sanger et C. D. Brandt. « 4H-SiC Power Devices : Comparative Overview of UMOS, DMOS, and GTO Device Structures ». MRS Proceedings 483 (1997). http://dx.doi.org/10.1557/proc-483-27.

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AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

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