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Articles de revues sur le sujet « Gallium nitride »

Auteur : Grafiati
Publié le 4 juin 2021
Mis à jour le 2 novembre 2024

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1

Sarkar, Sujoy, et S. Sampath. « Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control ». Chemical Communications 52, no 38 (2016) : 6407–10. http://dx.doi.org/10.1039/c6cc02487d.

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A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.
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2

Dobrynin, A. V., M. M. Sletov et V. V. Smirnov. « Luminescent properties of gallium nitride and gallium-aluminum nitride ». Journal of Applied Spectroscopy 55, no 5 (novembre 1991) : 1169–71. http://dx.doi.org/10.1007/bf00658419.

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3

Al-Zuhairi, Omar, Ahmad Shuhaimi, Nafarizal Nayan, Adreen Azman, Anas Kamarudzaman, Omar Alobaidi, Mustafa Ghanim, Estabraq T. Abdullah et Yong Zhu. « Non-Polar Gallium Nitride for Photodetection Applications : A Systematic Review ». Coatings 12, no 2 (18 février 2022) : 275. http://dx.doi.org/10.3390/coatings12020275.

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.
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Rajan, Siddharth, et Debdeep Jena. « Gallium nitride electronics ». Semiconductor Science and Technology 28, no 7 (21 juin 2013) : 070301. http://dx.doi.org/10.1088/0268-1242/28/7/070301.

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Kochuev, D. A., A. S. Chernikov, R. V. Chkalov, A. V. Prokhorov et K. S. Khorkov. « Deposition of GaN nanoparticles on the surface of a copper film under the action of electrostatic field during the femtosecond laser ablation synthesis in ammonia environment ». Journal of Physics : Conference Series 2131, no 5 (1 décembre 2021) : 052089. http://dx.doi.org/10.1088/1742-6596/2131/5/052089.

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Abstract In this article, we show the possibility for obtaining and deposition of gallium nitride nanoparticles under the action of femtosecond laser radiation. Using the developed setup for thermal vacuum deposition of copper on silicon plates, we obtained the thin-film substrates following by the deposition of gallium nitride on them. The gallium nitride was formed by applying the femtosecond laser radiation to the gallium targets in ammonia medium. The controlled collection of ablation products following by their removal from the processing area by means of electrostatic field was used in the setup in order to efficiently collect gallium nitride nanoparticles. The formation of gallium nitride nanoparticles is verified by the results of X-ray diffraction analysis.
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Mendes, Marco, Jeffrey Sercel, Mathew Hannon, Cristian Porneala, Xiangyang Song, Jie Fu et Rouzbeh Sarrafi. « Advanced Laser Scribing for Emerging LED Materials ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (1 janvier 2011) : 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

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Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this paper we will discuss some of the recent laser scribing/dicing techniques and how adequate selection of laser parameters and beam delivery optics allows for a high quality high throughput singulation process for the various materials listed above.
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7

McLaurin, M., B. Haskell, S. Nakamura et J. S. Speck. « Gallium adsorption onto (112̄0) gallium nitride surfaces ». Journal of Applied Physics 96, no 1 (juillet 2004) : 327–34. http://dx.doi.org/10.1063/1.1759086.

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Assali, Lucy V. C., W. V. M. Machado et João F. Justo. « Manganese Impurity in Boron Nitride and Gallium Nitride ». Materials Science Forum 483-485 (mai 2005) : 1047–50. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.1047.

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We carried out a theoretical investigation on the properties of manganese impurity centers in cubic boron and gallium nitrides. The calculations were performed using the all electron spin-polarized full-potential linearized augmented plane wave methodology. Our results indicate that manganese in boron nitride, in a neutral charge state, is energetically more favorable in a divacancy site as compared to a substitutional cation site. We present the results on stability, spin states, impurity magnetic moment, hyperfine parameters, and formation and transition energies of manganese at the divacancy site in several charge states.
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9

Kang, Liping, Lingli Wang, Haiyan Wang, Xiaodong Zhang et Yongqiang Wang. « Preparation and Performance of Gallium Nitride Powders with Preferred Orientation ». MATEC Web of Conferences 142 (2018) : 01009. http://dx.doi.org/10.1051/matecconf/201814201009.

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The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed to a decrease in disorder of the material that is decided by the (002) plane preferred orientation. The preferred orientation and a blue shift have some kind of reference significance to single crystal growth.
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10

Volcheck, V. S., M. S. Baranava et V. R. Stempitsky. « Thermal conductivity of wurtzite gallium nitride ». Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no 3 (8 octobre 2022) : 285–97. http://dx.doi.org/10.29235/1561-8358-2022-67-3-285-297.

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This paper reviews the theoretical and experimental works concerning one of the most important parameters of wurtzite gallium nitride – thermal conductivity. Since the heat in gallium nitride is transported almost exclusively by phonons, its thermal conductivity has a temperature behavior typical of most nonmetallic crystals: the thermal conductivity increases proportionally to the third power of temperature at lower temperatures, reaches its maximum at approximately 1/20 of the Debye temperature and decreases proportionally to temperature at higher temperatures. It is shown that the thermal conductivity of gallium nitride (depending on fabrication process, crystallographic direction, concentration of impurity and other defects, isotopical purity) varies significantly, emphasizing the importance of determining this parameter for the samples that closely resemble those being used in specific applications. For isotopically pure undoped wurtzite gallium nitride, the thermal conductivity at room temperature has been estimated as high as 5.4 W/(cm·K). The maximum room temperature value measured for bulkshaped samples of single crystal gallium nitride has been 2.79 W/(cm·K).
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11

Koratkar, Nikhil A. « Two-dimensional gallium nitride ». Nature Materials 15, no 11 (29 août 2016) : 1153–54. http://dx.doi.org/10.1038/nmat4740.

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12

Seo, Hee Won, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Kwang Soo Park et Sangsig Kim. « Strained gallium nitride nanowires ». Journal of Chemical Physics 116, no 21 (juin 2002) : 9492–99. http://dx.doi.org/10.1063/1.1475748.

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13

Guy, I. L., S. Muensit et E. M. Goldys. « Electrostriction in gallium nitride ». Applied Physics Letters 75, no 23 (6 décembre 1999) : 3641–43. http://dx.doi.org/10.1063/1.125414.

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14

Huang, Yu, Xiangfeng Duan, Yi Cui et Charles M. Lieber. « Gallium Nitride Nanowire Nanodevices ». Nano Letters 2, no 2 (février 2002) : 101–4. http://dx.doi.org/10.1021/nl015667d.

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15

Ainbund, M. R., E. G. Vil’kin, A. V. Pashuk, A. S. Petrov et I. N. Surikov. « Photoemission from gallium nitride ». Technical Physics Letters 30, no 6 (juin 2004) : 451. http://dx.doi.org/10.1134/1.1773331.

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16

Orlov, V. V., et G. I. Zebrev. « Gallium Nitride FET Model ». IOP Conference Series : Materials Science and Engineering 475 (18 février 2019) : 012007. http://dx.doi.org/10.1088/1757-899x/475/1/012007.

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17

Bae, Seung Yong, Hee Won Seo, Jeunghee Park, Hyunik Yang, Hyunsuk Kim et Sangsig Kim. « Triangular gallium nitride nanorods ». Applied Physics Letters 82, no 25 (23 juin 2003) : 4564–66. http://dx.doi.org/10.1063/1.1583873.

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18

Xing, H., S. Keller, Y.-F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie et al. « Gallium nitride based transistors ». Journal of Physics : Condensed Matter 13, no 32 (26 juillet 2001) : 7139–57. http://dx.doi.org/10.1088/0953-8984/13/32/317.

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19

Grabianska, Karolina, Robert Kucharski, Tomasz Sochacki, Jan L. Weyher, Malgorzata Iwinska, Izabella Grzegory et Michal Bockowski. « On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals ». Crystals 12, no 4 (15 avril 2022) : 554. http://dx.doi.org/10.3390/cryst12040554.

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The results of basic ammonothermal crystallization of gallium nitride are described. The material is mainly analyzed in terms of the formation of stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to a stress relaxation process. Gallium nitride grown in different positions of the crystallization zone is examined in cross-polarized light. Interfaces between native ammonothermal seeds and new-grown gallium nitride layers are investigated in ultraviolet light. The etch pit densities in the seeds and the layers is determined and compared. Based on the obtained results a model of stress and defect formation is presented. New solutions for improving the structural quality of basic ammonothermal gallium nitride crystals are proposed.
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20

Yuanlong, Chen. « The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) ». E3S Web of Conferences 198 (2020) : 01025. http://dx.doi.org/10.1051/e3sconf/202019801025.

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Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.
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21

Stoddard, Nathan, et Siddha Pimputkar. « Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023 : Process, Defects and Devices ». Crystals 13, no 7 (23 juin 2023) : 1004. http://dx.doi.org/10.3390/cryst13071004.

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Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium nitride grown on foreign substrates such as sapphire and silicon carbide, the best performance values consistently come from devices built on bulk-grown gallium nitride from native seeds. The most prominent and promising of the bulk growth methods is the ammonothermal method of high-pressure solution growth. The state-of-the-art from the last five years in ammonothermal gallium nitride technology is herein reviewed within the general categories of growth technology, characterization and defects as well as device performance.
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22

Yan, Han, et Pei Wang. « Adsorption and Diffusion of Aluminum, Gallium and Indium Atoms on Semi-Polar Gallium Nitride Substrate Surface : A First Principle Simulation ». Advanced Materials Research 1015 (août 2014) : 598–601. http://dx.doi.org/10.4028/www.scientific.net/amr.1015.598.

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The first principles simulations are performed to investigate the adsorption and diffusion of aluminum, gallium and indium atoms on semi-polar gallium nitrides surface, the calculations are performed by using the Car–Parrinello molecular dynamics (CPMD) method. The aluminum ad-atoms adsorption in path 1 and path 3 are much stable than in path 2. The maximum adsorption energy of path1, path2 and path3 are different, which reveal that a different barrier energy pathway between indium ad-atom diffuse along path 1, path2 and path3. Our calculation results reveal that diffusion barriers of aluminum, gallium and indium atoms on semi-polar gallium nitride surface are anisotropy.
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23

S.T, HARRY. « Thresholds and Delimitations of Quantum Confinement in Spherical Gallium Nitride and Gallium Arsenide Quantum Dots ». International Journal of Research Publication and Reviews 5, no 5 (7 mai 2024) : 6770–74. http://dx.doi.org/10.55248/gengpi.5.0524.1288.

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24

Akinlami, J. O. « Reflection coefficient and optical conductivity of gallium nitride GaN ». Semiconductor Physics Quantum Electronics and Optoelectronics 15, no 3 (25 septembre 2012) : 281–84. http://dx.doi.org/10.15407/spqeo15.03.281.

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Gramatikov, Pavlin. « GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION ». Journal Scientific and Applied Research 15, no 1 (3 mars 2019) : 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.

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Yang, Yannan, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie et al. « In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication ». Micromachines 14, no 7 (21 juin 2023) : 1278. http://dx.doi.org/10.3390/mi14071278.

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In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 μs), the dynamic Ron increase of ~14.1% was achieved.
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Новикова, Н. Н., В. А. Яковлев, С. А. Климин, Т. В. Малин, А. М. Гилинский et К. С. Журавлев. « Поверхностные поляритоны в пленках нитридов алюминия и галлия, легированных кремнием ». Журнал технической физики 127, no 7 (2019) : 42. http://dx.doi.org/10.21883/os.2019.07.47929.84-19.

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AbstractThe reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
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Ezubchenko I. S., Chernykh M. Y., Chernykh I. A., Andreev A. A., Mayboroda I. O., Kolobkova E. M., Khrapovitskaya Yu. V., Grishchenko J. V., Perminov P. A. et Zanaveskin M. L. « Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices ». Technical Physics Letters 48, no 4 (2022) : 19. http://dx.doi.org/10.21883/tpl.2022.04.53163.19111.

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In this work, thermometric measurements of gallium nitride-based ungated transistors on silicon-on-diamond composite substrates are performed. Their heat sink efficiency is compared with transistors made by standard technology on a silicon carbide substrates. Reducing of the surface temperature by more than 50oC using new type of silicon-on-diamond composite substrates at dissipation power above 7 W is shown. The proposed approach is promising for increasing the output power and reliability of gallium nitride-based devices. Keywords: gallium nitride, heat sink, diamond, dissipation power.
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Zhou, Xiang, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo et Silvija Gradečak. « Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures ». ACS Nano 9, no 3 (12 février 2015) : 2868–75. http://dx.doi.org/10.1021/nn506867b.

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30

Lueng, C. M., H. L. W. Chan, C. Surya et C. L. Choy. « Piezoelectric coefficient of aluminum nitride and gallium nitride ». Journal of Applied Physics 88, no 9 (novembre 2000) : 5360–63. http://dx.doi.org/10.1063/1.1317244.

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31

Alliata, D., N. Anderson, M. Durand de Gevigney, I. Bergoend et P. Gastaldo. « How to secure the fabrication of Gallium Nitride on Si wafers ». International Symposium on Microelectronics 2019, no 1 (1 octobre 2019) : 000444–49. http://dx.doi.org/10.4071/2380-4505-2019.1.000444.

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Abstract Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized.
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32

Kochuev D. A., Chernikov A. S., Abramov D. V., Voznesenskaya A. A., Chkalov R. V. et Khorkov K. S. « Processes of ablation and structures growth under the action of femtosecond laser pulses on the gallium surface in an ammonia medium ». Technical Physics 68, no 4 (2023) : 441. http://dx.doi.org/10.21883/tp.2023.04.55934.4-23.

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In this paper, we present the results of processing metallic gallium in an ammonia vapor medium at 2 bar pressure by femtosecond laser pulses. The influence of the ammonia concentration and the mode of laser beam scanning on the result of laser action is considered. It has been established that an increase in the concentration of ammonia vapor and a change in the scanning regime lead to a radical change in the laser ablation process. A decrease in the scanning speed leads to the cessation of the ablation process and the development of the nitridation process of the gallium surface, accompanied by the formation of columnar structures up to 12 mm long and about 100 μm in diameter. The synthesized nanoparticles and structures were studied using scanning electron microscopy, Raman spectroscopy, and X-ray analysis. Keywords: laser ablation, gallium nitride, gallium nitride nanoparticles manufacturing, ablative synthesis of gallium nitride nanoparticles.
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Кириленко, Д. А., А. В. Мясоедов, А. Е. Калмыков et Л. М. Сорокин. « Влияние морфологии буферного слоя AlN на структурное качество полуполярного слоя GaN, выращенного на подложке Si(001), по данным просвечивающей электронной микроскопии ». Письма в журнал технической физики 48, no 5 (2022) : 51. http://dx.doi.org/10.21883/pjtf.2022.05.52159.18932.

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Structural features of the interface between semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7° were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer is revealed: faceted structure the surface of the buffer layer reduces the threading dislocations density.
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Chen, Sheng. « Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors ». Highlights in Science, Engineering and Technology 81 (26 janvier 2024) : 286–90. http://dx.doi.org/10.54097/26qm0041.

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Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitride based diluted magnetic semiconductors. This paper found that the theoretical prediction of gallium nitride based diluted magnetic semiconductors is generally believed to have good temperature conditions and advantages in thermal conductivity, electron mobility, breakdown voltage, and other aspects. The current experimental results also confirm that gallium nitride based diluted magnetic semiconductors can improve the limitations of semiconductors under room temperature conditions. This article believes that this semiconductor material has broad development potential in fields such as intelligent vehicles, aerospace, and cloud computing.
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KIYONO, Hajime, Yasuyuki MATSUO, Takuto MISE, Kohei KOBAYASHI et Hanan ALHUSSAIN. « Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders ». Journal of the Ceramic Society of Japan 128, no 10 (1 octobre 2020) : 665–69. http://dx.doi.org/10.2109/jcersj2.20073.

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Volcheck V. S., Lovshenko I. Yu. et Stempitsky V. R. « Design optimization of the gallium nitride high electron mobility transistor with graphene and boron nitride heat-spreading elements ». Semiconductors 57, no 3 (2023) : 216. http://dx.doi.org/10.21883/sc.2023.03.56239.4732.

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The self-heating effect has long been a persistent issue for high electron mobility transistors based on gallium nitride due to their inherently poor heat dissipation capability. Although a wide variety of thermal management solutions has to date been proposed, the problem of the extremely non-uniform heat dissipation at the micrometer scale is still challenging. It has recently been demonstrated, however, that the performance of gallium nitride high electron mobility transistors can be substantially improved by the introduction of various heat-spreading elements based on graphene, boron nitride or diamond. In this paper, using numerical simulation, we carried out a design optimization procedure for a normally-off gallium nitride high electron mobility transistor containing both graphene and cubic boron nitride layers. First, a screening experiment based on a very economical Plackett-Burman design was performed in order to find the most critical geometric parameters that influence the dc characteristics. After that, a full two-level factorial experiment consisting of three factors was implemented and an optimized parameter set was yielded. By applying this set, the output power was increased by 11.35%. The combination of the most significant parameters does not include any factors related to the heat-spreading layers. Keywords: gallium nitride, high electron mobility transistor, optimization, Plackett-Burman design, screening experiment, self-heating.
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Il'kov, V. K., A. O. Mikhalev et M. V. Maytama. « Arsenide and Nitride Gallium Switches ». Nano- i Mikrosistemnaya Tehnika 20, no 7 (30 juillet 2018) : 425–33. http://dx.doi.org/10.17587/nmst.20.425-433.

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Wetzel, C., W. Walukiewicz, Eugene E. Haller, J. W. Ager, A. Chen, S. Fischer, P. Y. Yu et al. « Carrier Localization in Gallium Nitride ». Materials Science Forum 196-201 (novembre 1995) : 31–36. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.31.

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Alwadai, Norah, Nigza Saleman, Zainab Mufarreh Elqahtani, Salah Ud-Din Khan et Abdul Majid. « Photonics with Gallium Nitride Nanowires ». Materials 15, no 13 (24 juin 2022) : 4449. http://dx.doi.org/10.3390/ma15134449.

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The surface plasmon resonance in low-dimensional semiconducting materials is a source of valuable scientific phenomenon which opens widespread prospects for novel applications. A systematic study to shed light on the propagation of plasmons at the interface of GaN nanowire is reported. A comprehensive analysis of the interaction of light with GaN nanowires and the propagation of plasmons is carried out to uncover further potentials of the material. The results obtained on the basis of calculations designate the interaction of light with nanowires, which produced plasmons at the interface that propagate along the designed geometry starting from the center of the nanowire towards its periphery, having more flux density at the center of the nanowire. The wavelength of light does not affect the propagation of plasmons but the flux density of plasmons appeared to increase with the wavelength. Similarly, an increment in the flux density of plasmons occurs even in the case of coupled and uncoupled nanowires with wavelength, but more increment occurs in the case of coupling. Further, it was found that an increase in the number of nanowires increases the flux density of plasmons at all wavelengths irrespective of uniformity in the propagation of plasmons. The findings point to the possibility of tuning the plasmonics by using a suitable number of coupled nanowires in assembly.
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40

Lu, Min, Guo Wang et Chang Sheng Yao. « Gallium Nitride for Nuclear Batteries ». Advanced Materials Research 343-344 (septembre 2011) : 56–61. http://dx.doi.org/10.4028/www.scientific.net/amr.343-344.56.

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Gallium Nitride (GaN) PIN betavoltaic nuclear batteries (GB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN PIN diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 (63Ni), which emits β particles, is loaded on the GaN PIN diodes to achieve GB. Current-Voltage (I-V) characteristics shows that the GaN PIN diodes have leakage current of 18 pA at -10V due to consummate fabrication processes, and the open circuit voltage of the GB is estimated about 0.14 V and the short circuit current density is 89.2nAcm-2 . The relative limited performance of the GB is due to thick dead layer and strong backscattering of β particles, Which lead to less energy deposition in GB. However, the conversion efficiency of 1.6% and charge collection efficiency (CCE) of 100% for the GB have been obtained. Therefore, the output power of the GB are expected to greatly increase with thin dead layer and structural surface weakening the backscattering.
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41

Zheng, Yanzhen, Changzheng Sun, Bing Xiong, Lai Wang, Zhibiao Hao, Jian Wang, Yanjun Han, Hongtao Li, Jiadong Yu et Yi Luo. « Integrated Gallium Nitride Nonlinear Photonics ». Laser & ; Photonics Reviews 16, no 1 (11 décembre 2021) : 2100071. http://dx.doi.org/10.1002/lpor.202100071.

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42

Foresi, J. S., et T. D. Moustakas. « Metal contacts to gallium nitride ». Applied Physics Letters 62, no 22 (31 mai 1993) : 2859–61. http://dx.doi.org/10.1063/1.109207.

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Brandt, M. S., N. M. Johnson, R. J. Molnar, R. Singh et T. D. Moustakas. « Hydrogenation ofp‐type gallium nitride ». Applied Physics Letters 64, no 17 (25 avril 1994) : 2264–66. http://dx.doi.org/10.1063/1.111639.

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Muensit, Supasarote, et I. L. Guy. « Electromechanical effects in gallium nitride ». Ferroelectrics 262, no 1 (janvier 2001) : 195–200. http://dx.doi.org/10.1080/00150190108225149.

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Bae, Seung Yong, Hee Won Seo, Jeunghee Park, Hyunik Yang, Ju Chul Park et Soun Young Lee. « Single-crystalline gallium nitride nanobelts ». Applied Physics Letters 81, no 1 (juillet 2002) : 126–28. http://dx.doi.org/10.1063/1.1490395.

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Pankove, J. I., J. T. Torvik, C. H. Qiu, I. Grzegory, S. Porowski, P. Quigley et B. Martin. « Molecular doping of gallium nitride ». Applied Physics Letters 74, no 3 (18 janvier 1999) : 416–18. http://dx.doi.org/10.1063/1.123046.

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Johnson, Justin C., Heon-Jin Choi, Kelly P. Knutsen, Richard D. Schaller, Peidong Yang et Richard J. Saykally. « Single gallium nitride nanowire lasers ». Nature Materials 1, no 2 (15 septembre 2002) : 106–10. http://dx.doi.org/10.1038/nmat728.

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48

Goldberger, Joshua, Rongrui He, Yanfeng Zhang, Sangkwon Lee, Haoquan Yan, Heon-Jin Choi et Peidong Yang. « Single-crystal gallium nitride nanotubes ». Nature 422, no 6932 (avril 2003) : 599–602. http://dx.doi.org/10.1038/nature01551.

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49

Leszczynski, M., H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski et al. « Lattice parameters of gallium nitride ». Applied Physics Letters 69, no 1 (juillet 1996) : 73–75. http://dx.doi.org/10.1063/1.118123.

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Schwarz, R. B., K. Khachaturyan et E. R. Weber. « Elastic moduli of gallium nitride ». Applied Physics Letters 70, no 9 (3 mars 1997) : 1122–24. http://dx.doi.org/10.1063/1.118503.

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