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Articles de revues sur le sujet « GaN Power Devices »

Auteur : Grafiati

Publié le 11 janvier 2025

Mis à jour le 31 juillet 2025

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1

Langpoklakpam, Catherine, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, and Hao-Chung Kuo. "Vertical GaN MOSFET Power Devices." Micromachines 14, no. 10 (2023): 1937. http://dx.doi.org/10.3390/mi14101937.

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Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Addi

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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.

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High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,

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3

Nela, Luca, Ming Xiao, Yuhao Zhang, and Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices." Applied Physics Letters 120, no. 19 (2022): 190501. http://dx.doi.org/10.1063/5.0086978.

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The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology has rapidly developed and is expected to gain a significant market share in an increasing number of applications in the coming years. However, despite the great progress, the performance of current GaN devices is still far from what the GaN material could potentially offer, and a significant reduction of the device on-resistance for a certai

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Zhang, A. P., F. Ren, T. J. Anderson, et al. "High-Power GaN Electronic Devices." Critical Reviews in Solid State and Materials Sciences 27, no. 1 (2002): 1–71. http://dx.doi.org/10.1080/20014091104206.

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Otsuka, Nobuyuki, Shuichi Nagai, Hidetoshi Ishida, et al. "(Invited) GaN Power Electron Devices." ECS Transactions 41, no. 8 (2019): 51–70. http://dx.doi.org/10.1149/1.3631486.

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Di, Kuo, and Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems." Journal of Physics: Conference Series 2463, no. 1 (2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.

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Abstract The main function of power devices is to convert electrical energy through high-speed switching, such as AC/DC, high and low voltage conversion, etc. Therefore, the performance of the device directly affects the performance of the power electronic device, thereby further affecting the conversion efficiency of electrical energy. The arrival of the 5G era has greatly increased the demand for gallium nitride (GaN). The development of the wireless communication market has made GaN play a key role in many aspects of human activities. The main aim of this article is to research the applicat

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Martín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa, and Christophe Gaquière. "GaN devices for power amplifier design." International Journal of Microwave and Wireless Technologies 1, no. 2 (2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.

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This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally t

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Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.

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GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die stru

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Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.

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After decades of relentless efforts, GaN power devices, specifically, the lateral GaN high-electron mobility transistor (HEMT), have been commercialized in the 15-650 V classes. Owing to GaN’s competitive physical properties over Si and SiC for power electronics, GaN HEMTs allow for higher switching frequency and therefore, have already seen wide adoptions in fast chargers, wireless charging, data centers, and electrified transportation. Despite the success of lateral GaN HEMTs, a vertical device structure is usually believed to be more favorable for high-voltage, high-power devices. In the la

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Su, Shuo, Yanrong Cao, Weiwei Zhang, et al. "Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices." Micromachines 16, no. 7 (2025): 729. https://doi.org/10.3390/mi16070729.

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A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power electronic system and seriously threatens the stability of the equipment. Therefore, it is particularly important to study the damage mechanism of GaN HEMT power devices under high field conditions. This work studies the degradation of Cascode GaN HEMT power devices under off-state high-field stress and analyzes the related damage mechanism. It is fou

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11

Chowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.

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In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

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Zhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.

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With the development of high-voltage switches and high-speed RF circuits, the enhancement mode(E-mode) AlGaN/GaN HEMTs have become a hot topic in those fields. The E-mode GaN-based HEMTs have channel current at the positive gate voltage, greatly expanding the device in low power digital circuit applications. The main methods to realize E-mode AlGaN/GaN HEMT power devices are p-GaN gate technology, recessed gate structure, fluoride ion implantation technology and Cascode structure (Cascode). In this paper, the advantage and main realizable methods of E-mode AlGaN/GaN HEMT are briefly described.

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Zhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Transactions 108, no. 6 (2022): 11–20. http://dx.doi.org/10.1149/10806.0011ecst.

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Power devices are highly desirable to possess excellent avalanche and short-circuit (or surge-current) robustness for numerous power electronics applications like automotive powertrains, electric grids, motor drives, among many others. Current commercial GaN power device, the lateral GaN high-electron-mobility transistor (HEMT), is known to have no avalanche capability and very limited short-circuit robustness. These limitations have become a roadblock for penetration of GaN devices in many industrial power applications. Recently, through collaborations with NexGen Power Systems (NexGen), Inc.

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Chen, Lu. "Design and Application of High-Efficiency Gallium Nitride (GaN)-Based Power Electronic Devices." Applied and Computational Engineering 153, no. 1 (2025): 90–95. https://doi.org/10.54254/2755-2721/2025.23350.

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As silicon technology reaches its physical limits, gallium nitride (GaN) electronic devices are emerging as a disruptive solution in power electronics. GaN devices, with their superior breakdown voltage, exceptional thermal stability, and outstanding high-frequency performance, offer considerable benefits over traditional silicon-based devices. And these properties increase power density, switching speed, and greatly enhance energy efficiency, making GaN a key technology driving the development of next-generation power electronic systems. This paper reviews the latest advancements in GaN epita

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15

Rodriguez, Jose A., Tsz Tsoi, David Graves, and Stephen B. Bayne. "Evaluation of GaN HEMTs in H3TRB Reliability Testing." Electronics 11, no. 10 (2022): 1532. http://dx.doi.org/10.3390/electronics11101532.

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Gallium Nitride (GaN) power devices can offer better switching performance and higher efficiency than Silicon Carbide (SiC) and Silicon (Si) devices in power electronics applications. GaN has extensively been incorporated in electric vehicle charging stations and power supplies, subjected to harsh environmental conditions. Many reliability studies evaluate GaN power devices through thermal stresses during current conduction or pulsing, with a few focusing on high blocking voltage and high humidity. This paper compares GaN-on-Si High-Electron-Mobility Transistors (HEMT) device characteristics u

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UEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA, and DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.

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We review our state-of-the-art GaN -based device technologies for power switching at low frequencies and for future millimeter-wave communication systems. These two applications are emerging in addition to the power amplifiers at microwave frequencies which have been already commercialized for cellular base stations. Technical issues of the power switching GaN device include lowering the fabrication cost, normally-off operation and further increase of the breakdown voltages extracting full potential of GaN -based materials. We establish flat and crack-free epitaxial growth of GaN on Si which c

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17

Bockowski, Michal. "(Invited) Towards GaN-on-GaN High-Power Electronic Devices." ECS Meeting Abstracts MA2023-02, no. 32 (2023): 1576. http://dx.doi.org/10.1149/ma2023-02321576mtgabs.

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Application of gallium nitride (GaN) substrates in electronic and optoelectronic industries is constantly increasing. In order to fabricate wafers, GaN crystals of the highest structural quality and desired electrical (and sometimes optical) properties must be grown. Today, there are three main GaN crystallization methods: i/ halide vapor phase epitaxy (HVPE) with its derivatives: halide-free VPE and oxide VPE; ii/ sodium-flux; and iii/ ammonothermal. The last approach can be basic or acidic depending on what mineralizer is used to increase the solubility of GaN in the feedstock zone. In this

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18

UEDA, Tetsuzo, Satoshi NAKAZAWA, Tomohiro MURATA, et al. "Polarization Engineering in GaN Power Devices." Journal of the Vacuum Society of Japan 54, no. 6 (2011): 393–97. http://dx.doi.org/10.3131/jvsj2.54.393.

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Kachi, Tetsu. "Current status of GaN power devices." IEICE Electronics Express 10, no. 21 (2013): 20132005. http://dx.doi.org/10.1587/elex.10.20132005.

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Chow, T. P., V. Khemka, J. Fedison, et al. "SiC and GaN bipolar power devices." Solid-State Electronics 44, no. 2 (2000): 277–301. http://dx.doi.org/10.1016/s0038-1101(99)00235-x.

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Shi, Junyu. "A deep dive into SiC and GaN power devices: Advances and prospects." Applied and Computational Engineering 23, no. 1 (2023): 230–37. http://dx.doi.org/10.54254/2755-2721/23/20230660.

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The development of GaN and SiC devices has been the subject of intensive research in recent years, and significant progress has been made in terms of device performance, reliability, and cost-effectiveness. However, there are still challenges to be overcome before these materials can become mainstream in power electronics. This review paper compares the properties and performance of SiC and GaN power devices, which are both wide-bandgap semiconductors that offer superior performance compared to traditional silicon-based devices. The paper discusses the material properties of SiC and GaN, inclu

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Liu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, et al. "The Evolution of Manufacturing Technology for GaN Electronic Devices." Micromachines 12, no. 7 (2021): 737. http://dx.doi.org/10.3390/mi12070737.

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technol

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Zaidan, Zahraa, Nedal Al Taradeh, Mohammed Benjelloun, et al. "A Novel Isolation Approach for GaN-Based Power Integrated Devices." Micromachines 15, no. 10 (2024): 1223. http://dx.doi.org/10.3390/mi15101223.

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This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices. We propose a new isolation method designed to prevent any degradation of the lateral transistor’s performance. Specifically, high voltage applied to the drain of the vertical GaN power FinFET can adve

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Wu, Nengtao, Zhiheng Xing, Shanjie Li, Ling Luo, Fanyi Zeng, and Guoqiang Li. "GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices." Semiconductor Science and Technology 38, no. 6 (2023): 063002. http://dx.doi.org/10.1088/1361-6641/acca9d.

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Abstract Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transi

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McCarthy, L. S., N.-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U. K. Mishra. "High Voltage AlGaN/GaN Heterojunction Transistors." International Journal of High Speed Electronics and Systems 14, no. 01 (2004): 225–43. http://dx.doi.org/10.1142/s0129156404002314.

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The use of AlGaN / GaN HEMTs and HBTs for switching power supplies is explored. With its high electron velocities and breakdown fields, GaN has great potential for power switching. The field-plate HEMT increased breakdown voltages by 20% to 570V by reducing the peak field at the drain-side edge of the gate. The use of a gate insulator is also investigated, using both JVD SiO 2 and e-beam evaporated SiO 2 to reduce gate leakage, increasing breakdown voltages to 1050V and 1300V respectively. The power device figure of merit (FOM) for these devices: [Formula: see text], is the highest reported fo

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Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

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Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to

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Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) p

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Waltereit, Patrick, Wolfgang Bronner, Rüdiger Quay, et al. "AlGaN/GaN epitaxy and technology." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 3–11. http://dx.doi.org/10.1017/s175907871000005x.

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We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1–6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 150 nm for higher frequencies. The developed HEMTs demonstrate excellent high-voltage stability, high power performance, and large DC to RF conversion efficiencies for all gate lengths. On large gate w

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Loong, Ling Jin, Chockalingam Aravind Vaithilingam, Gowthamraj Rajendran, and Venkatkumar Muneeswaran. "Modelling and analysis of vienna rectifier for more electric aircraft applications using wide band-gap materials." Journal of Physics: Conference Series 2120, no. 1 (2021): 012027. http://dx.doi.org/10.1088/1742-6596/2120/1/012027.

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Abstract This paper presents a comprehensive study on the switching effects of wide bandgap devices and the importance of power electronics in an aircraft application. Silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) are wide bandgap devices that act as a power electronic switch in the AC-DC converter for More Electric Aircraft (MEA) applications. Therefore, it is important to observe their converting efficiency to identify the most suitable wide bandgap device among three devices for AC-DC converters in aircraft applications to provide high efficiency and high-power density. In

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Kitchen, Jennifer, Soroush Moallemi, and Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.

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Digital transceiver architectures offer the potential for achieving wireless hardware flexibility to frequency and modulation scheme for future-generation communications systems. Additionally, digital transmitters lend themselves to the use of switch-mode power amplifiers, which can have significantly higher efficiency than their linear counterparts. Two proposed architectures for realizing digital transmitters will be described in this work, both of which employ a hybrid combination of silicon integrated circuits (IC) and a power technology (e.g. GaN). This hybrid architecture takes advantage

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Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.

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Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature o

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Xie, Bingqian. "Cryogenics Power Electronics: Analyzing the Potential of Gallium Nitride (GaN) for High-Efficiency Energy Conversion and Transmission." Applied and Computational Engineering 108, no. 1 (2025): 21–25. https://doi.org/10.54254/2755-2721/2025.ld20863.

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Power electronic devices continuously evolve towards higher conversion efficiency and lower energy loss, promoting efficient energy use and sustainable development. However, the rising temperature of the working device usually leads to unavoidable energy loss. To address this issue, cryogenic power electronics have attracted increasing attention from researchers. The use of low temperatures in these devices minimizes thermal losses, improving their efficiency and performance. Additionally, the development of new technology, such as superconductivity, and complex application environments also i

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Hikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, et al. "Status of GaN-Based Power Switching Devices." Materials Science Forum 600-603 (September 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.

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State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current o

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Neufeld, Carl, Geetak Gupta, Philip Zuk, and Likun Shen. "(Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications." ECS Meeting Abstracts MA2022-02, no. 37 (2022): 1345. http://dx.doi.org/10.1149/ma2022-02371345mtgabs.

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Gallium Nitride has been proven to be a superior material system for high performance, reliable, high power transistors enabling high efficiency in power conversion applications [1,2]. In this paper we highlight some recent advances in GaN technology which expand the capabilities and applications of GaN power switches. Transphorm, Inc, is a pioneer and leader in GaN power electronics with a wide product portfolio of products spanning <100W to >10kW applications with JEDEC and AEC-Q101 qualified products including qualified 650V and 900V products (Fig. 1), as well as demonstrated 1200V de

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Du, Yilin. "An Investigation of Thermal Reliability Issues and Solution Strategies for GaN-HEMT Power Devices." Applied and Computational Engineering 141, no. 1 (2025): 81–88. https://doi.org/10.54254/2755-2721/2025.21687.

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This paper discusses the thermal reliability design of high electron mobility transistor (HEMT) power in gallium nitride (GaN) devices in depth. GaN HEMTs' exceptional performance in high-frequency, high-voltage, and high-power applications has garnered a lot of interest. However, a major element limiting long-term stability is now their problems with thermal reliability. This paper provides a detailed analysis of the thermal challenges faced by GaN-HEMT power devices, including the self-heating effect, uneven heat distribution, thermal stress, and thermal resistance, and discusses correspondi

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Oka, Tohru. "Recent development of vertical GaN power devices." Japanese Journal of Applied Physics 58, SB (2019): SB0805. http://dx.doi.org/10.7567/1347-4065/ab02e7.

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Peart, Matthew R., Damir Borovac, Wei Sun, Renbo Song, Nelson Tansu, and Jonathan J. Wierer. "AlInN/GaN diodes for power electronic devices." Applied Physics Express 13, no. 9 (2020): 091006. http://dx.doi.org/10.35848/1882-0786/abb180.

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Mishra, U. K., Shen Likun, T. E. Kazior, and Yi-Feng Wu. "GaN-Based RF Power Devices and Amplifiers." Proceedings of the IEEE 96, no. 2 (2008): 287–305. http://dx.doi.org/10.1109/jproc.2007.911060.

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Asif Khan, M., Q. Chen, Michael S. Shur, et al. "GaN based heterostructure for high power devices." Solid-State Electronics 41, no. 10 (1997): 1555–59. http://dx.doi.org/10.1016/s0038-1101(97)00104-4.

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Trew, R. J., M. W. Shin, and V. Gatto. "High power applications for GaN-based devices." Solid-State Electronics 41, no. 10 (1997): 1561–67. http://dx.doi.org/10.1016/s0038-1101(97)00105-6.

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Chow, T. Paul. "High-voltage SiC and GaN power devices." Microelectronic Engineering 83, no. 1 (2006): 112–22. http://dx.doi.org/10.1016/j.mee.2005.10.057.

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Ma, Zhenyang, Dexu Liu, Shun Yuan, Zhaobin Duan, and Zhijun Wu. "Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT." Aerospace 11, no. 5 (2024): 346. http://dx.doi.org/10.3390/aerospace11050346.

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In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect an

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Sugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.

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In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size

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Kong, Cen, Jian Jun Zhou, Jin Yu Ni, Yue Chan Kong, and Tang Sheng Chen. "High Breakdown Voltage GaN Power HEMT on Si Substrate." Advanced Materials Research 805-806 (September 2013): 948–53. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.948.

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GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET

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Chao, P. C., Kanin Chu, Jose Diaz, et al. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.

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ABSTRACTA new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than thr

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Fan, Chen, Haitao Zhang, Huipeng Liu, et al. "A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices." Micromachines 15, no. 8 (2024): 993. http://dx.doi.org/10.3390/mi15080993.

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This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics of GaN devices, and the stability of GaN devices can be analyzed from the perspective of switching characteristics. Based on the theory of dynamic changes in threshold opening voltage and capacitance caused by electrical stress, the mechanism of dynamic switching characteristics of GaN HEMT devices is studied and analyzed in detail.

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Roberts, J., T. MacElwee, and L. Yushyna. "The Thermal Integrity of Integrated GaN Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000061–68. http://dx.doi.org/10.4071/hiten-mp12.

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In this paper the authors describe GaN (gallium nitride) power switching transistors that use copper post and substrate via interconnect techniques. These transistors can be matrixed to allow a parallel array of the devices to provide very low on-resistance and high operating voltages. At 150 °C the basic building block which is a 2 × 2 mm die, provides 1200 V / 14 A. A 2×2 matrix array of these transistors provides for example, 1200 V / 56 A operation. The overall GaN device size is 4 × 4 mm. This high current density is achieved by using a unique castellated island topology. This provides sh

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Gramatikov, Pavlin. "GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION." Journal Scientific and Applied Research 15, no. 1 (2019): 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.

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Yaseen, Mohammad, and Rand Sabah Ismail. "Influence of High Temperature on the Electrical Properties of GaN HEMT Devices: A Review." Kerbala Journal for Engineering Sciences 4, no. 4 (2024): 283–315. https://doi.org/10.63463/kjes1148.

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GaN (Gallium Nitride) is one of the fastest-growing broadband semiconductor materials nowadays, and GaN HEMT (High Electron Mobility Transistors) provides a variety of possible uses in the fields of high frequency, high power, high temperature, and radiation resistance. Recently, GaN-based (HEMTs) has been broadly used in rising industries like 5G technology, new smart vehicles, unmanned aerial vehicles, and different applications because of their high power and high resistance. However, because HEMT devices have a high-power density, the self-heating effect will cause the junction temperature

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Luna, Lunet E., Travis J. Anderson, Andrew D. Koehler, et al. "Vertical and Lateral GaN Power Devices Enabled by Engineered GaN Substrates." ECS Transactions 86, no. 9 (2018): 3–8. http://dx.doi.org/10.1149/08609.0003ecst.

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