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Littérature scientifique sur le sujet « HEMT AlN »

Auteur : Grafiati
Publié le 1 mars 2025

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Articles de revues sur le sujet "HEMT AlN"

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Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin et Feng-Tso Chien. « Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator ». Membranes 11, no 10 (23 septembre 2021) : 727. http://dx.doi.org/10.3390/membranes11100727.

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.
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Yamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto et Takashi Egawa. « Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates ». MRS Advances 1, no 50 (2016) : 3415–20. http://dx.doi.org/10.1557/adv.2016.431.

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ABSTRACT In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial AlN layer decreased as the TMA preflow temperature increased. Further, the VDBV of the HEMT structure increased as the TMA preflow temperature increased. It is supposed that the screw- or mixed-type dislocations are the possible source of the vertical leakage current in the HEMT structures. The improvement in the crystal quality of the initial AlN layer affects the increase in the VDBV of the AlGaN/GaN HEMTs on Si substrates.
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Çörekçi, S., D. Usanmaz, Z. Tekeli, M. Çakmak, S. Özçelik et E. Özbay. « Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure ». Journal of Nanoscience and Nanotechnology 8, no 2 (1 février 2008) : 640–44. http://dx.doi.org/10.1166/jnn.2008.a181.

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We present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 108–109 cm−2. The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100–250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AlN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.
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Shrestha, Niraj Man, Yuen Yee Wang, Yiming Li et E. Y. Chang. « Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT ». Himalayan Physics 4 (22 décembre 2013) : 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.

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High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carrier properties of HEMT also depend on thickness of spacer layer. Our simulation showed that the mobility of 2DEG attains its maximum value at the 0.5 nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain current increases with increasing spacer layer thickness and reach maximum value at 1.2nm thick spacer layer.The Himalayan Physics Vol. 4, No. 4, 2013 Page: 14-17 Uploaded date: 12/22/2013
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Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang et Wen-Chau Liu. « Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures ». Science of Advanced Materials 13, no 2 (1 février 2021) : 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.
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Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang et Chun-Hsiung Lin. « Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer ». Micromachines 14, no 3 (23 février 2023) : 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.
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Gusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin et D. P. Borisenko. « Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier ». Mikroèlektronika 53, no 3 (27 octobre 2024) : 265–73. http://dx.doi.org/10.31857/s0544126924030086.

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Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.
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Roensch, Sebastian, Victor Sizov, Takuma Yagi, Saad Murad, Lars Groh, Stephan Lutgen, Michael Krieger et Heiko B. Weber. « Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon ». Materials Science Forum 740-742 (janvier 2013) : 502–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.502.

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The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.
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Михайлович, С. В., Р. Р. Галиев, А. В. Зуев, А. Ю. Павлов, Д. С. Пономарев et Р. А. Хабибуллин. « Влияние длины затвора на скорость инжекции электронов в каналах полевых транзисторов на основе AlGaN/AlN/GaN ». Письма в журнал технической физики 43, no 16 (2017) : 9. http://dx.doi.org/10.21883/pjtf.2017.16.44927.16727.

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Исследованы полевые транзисторы с высокой подвижностью электронов (HEMT) на основе AlGaN/AlN/GaN с разной длиной затвора Lg. Значения максимальных частот усиления по току fT и однонаправленного коэффициента усиления fmax составили 88 и 155 GHz для транзисторов с Lg =125 nm и 26 и 82 GHz для транзисторов с Lg = 360 nm соответственно. На основе измеренных S-параметров проведена экстракция значений элементов малосигнальных эквивалентных схем AlGaN/AlN/GaN HEMT и определена зависимость скорости инжекции vinj от напряжения затвор-исток. Также исследовано влияние длины затвора и напряжения между стоком и истоком на величину vinj. DOI: 10.21883/PJTF.2017.16.44927.16727
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Shen, L., S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars et U. K. Mishra. « AlGaN/AlN/GaN high-power microwave HEMT ». IEEE Electron Device Letters 22, no 10 (octobre 2001) : 457–59. http://dx.doi.org/10.1109/55.954910.

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Thèses sur le sujet "HEMT AlN"

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Lundskog, Anders. « Characterization of AlGaN HEMT structures ». Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729.

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During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electrical properties.

In this work, AlGaN HEMT structures grown on SiC substrates by a hot-wall MOCVD have been characterized for their properties using optical microscopy, scanning electron microscopy, transmission electron microscopy, capacitance/voltage, eddy-current resistivity, and by homebuilt epi-thickness mapping equipment.

A high electron mobility of 1700 [cm2/Vs] was achieved in an AlN exclusion-layer HEMT. A similar electron mobility of 1650 [cm2/Vs] was achieved in a combination of a double heterojunction and exclusion-layer structure. The samples had approximately the same electron mobility but with a great difference: the exclusion-layer version gave a sheet carrier density of 1.58*1013 [electrons/cm2] while the combination of double heterojunction and exclusion-layer gave 1.07*1013 [electrons/cm2]. A second 2DEG was observed in most structures, but not all, but was not stable with time.

The structures we grew during this work were also simulated using a one-dimensional Poisson-Schrödinger solver and the simulated electron densities were in fairly good agreement with the experimentally obtained. III-nitride materials, the CVD concept, and the onedimensional solver are shortly explained.

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Rajasingam, Srikaran. « Applications of Raman spectroscopy to AlxGa₁-xN technology : AlN substrates, high temperature annealing and HEMT devices ». Thesis, University of Bristol, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407018.

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Said, Nasri. « Evaluation de la robustesse des technologies HEMTs GaN à barrière AlN ultrafine pour l'amplification de puissance au-delà de la bande Ka ». Electronic Thesis or Diss., Bordeaux, 2024. http://www.theses.fr/2024BORD0425.

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La filière GaN est stratégique pour l'Union Européenne car elle permet d'améliorer la puissance et le rendement des systèmes radar et de télécommunication, notamment dans les bandes S à Ka (jusqu'à 30 GHz). Pour répondre aux besoins des futures applications, telles que la 5G et les systèmes militaires, le développement des technologies GaN vise à augmenter les fréquences jusqu'aux ondes millimétriques. Cela nécessite d'optimiser l'épitaxie et la réduction de la longueur de grille à moins de 150 nm, ainsi que l'utilisation de barrières ultrafines (<10 nm) pour éviter les effets de canaux courts. La substitution de la barrière AlGaN par du AlN représente une solution pour maintenir de bonnes performances tout en miniaturisant les composants. Dans ces travaux de thèse, plusieurs variantes technologiques à barrière AlN ultrafine (3 nm) sur des canaux GaN non-dopés de différentes épaisseurs, développées par le laboratoire IEMN sont étudiés. L'évaluation des performances et de la robustesse de ces technologies, cruciale pour leur qualification et utilisation dans des missions à long-terme, sont ainsi menées en mode DC et RF afin de définir les zones de sécurité de fonctionnement (SOA) et d’identifier les mécanismes de dégradation.La campagne de caractérisation DC et pulsée a révélé une faible dispersion des composants après leur stabilisation électrique, reflétant une bonne maîtrise technologique : ceci permet par ailleurs des études statistiques et des analyses génériques plus pertinentes sur l’ensemble des lots de composants étudiés. L'analyse de la sensibilité des dispositifs à des températures allant jusqu'à 200°C a prouvé la forte stabilité thermique des performances en mode diode et transistor, en suivant les indicateurs paramétriques représentatifs des modèles électriques des composants (courants de saturation et courants de fuite, tension de seuil, taux de retard aux commandes entrée sortie, …). L’ajout d’une barrière arrière AlGaN sur une couche tampon moyennement dopée C a réglé le compromis entre confinement des électrons et densités de pièges. Les tests de vieillissement accéléré en mode DC à différents points de polarisation et en mode RF par paliers de puissance d’entrée ont montré que la barrière arrière AlGaN confère une meilleure stabilité des courants de fuite et des courbes I(V) statiques, une réduction des effets de piégeage et d'auto-échauffement, ainsi qu'une extension de la SOA-DC opérationnelle. Les tests de vieillissement accéléré en mode dynamique à 10 GHz sur des HEMTs avec différents espacements grille-drain ont montré que la SOA-RF ne dépend pas de cet espacement, mais plutôt de la capacité de la grille à supporter des signaux RF élevés, avant dégradation brutale de cette dernière. En utilisant une méthode de modélisation non linéaire originale, prenant en compte le phénomène d'auto-polarisation, les dispositifs avec barrière AlGaN se sont révélés plus robustes également en RF. Cela se traduit par leur compression plus tardive de gain, allant jusqu’à +10dB et sans dégradation électrique ainsi que structurelle apparente (observée par photoluminescence). Indépendamment de la variante AlN/GaN, le mécanisme de dégradation en stress RF correspond au claquage abrupt de la grille Schottky conduisant à sa défaillance. Ces résultats prouvent que les composants sont plus sensibles aux conditions de polarisation DC qu’au niveau de signal RF injecté [...]
The GaN industry is strategic for the European Union because it enhances the power and efficiency of radar and telecommunication systems, especially in the S to Ka bands (up to 30 GHz). To meet the needs of future applications such as 5G and military systems, GaN technology development aims to increase frequencies to the millimeter-wave range. This requires optimizing epitaxy and reducing the gate length to less than 150 nm, as well as using ultrathin barriers (<10 nm) to avoid short-channel effects. Replacing the AlGaN barrier with AlN is a solution to maintain good performance while miniaturizing devices. In this thesis, several technological variants with an ultrathin AlN barrier (3 nm) on undoped GaN channels of various thicknesses, developed by the IEMN laboratory, are studied. The evaluation of the performance and robustness of these technologies, crucial for their qualification and use in long-term profil missions, is conducted in both DC and RF modes to define the safe operating areas (SOA) and identify degradation mechanisms.The DC and pulsed characterization campaign revealed low component dispersion after electrical stabilization, reflecting good technological control. This also allows for more relevant statistical studies and generic analyses across all component batches studied. The sensitivity analysis of the devices at temperatures up to 200°C demonstrated strong thermal stability in diode and transistor modes, following parametric indicators representative of the electrical models of the components (saturation currents and leakage currents, threshold voltage, gate and drain lags rates, ...). The addition of a AlGaN back-barrier on a moderately C-doped buffer layer resolved the trade-off between electron confinement and trap densities. Accelerated aging tests in DC mode at various biasing conditions and in RF mode by input power steps showed that the AlGaN back-barrier provides better stability in leakage currents and static I(V) curves, reduces trapping and self-heating effects, and extends the operational DC-SOA.Dynamic accelerated aging tests at 10 GHz on HEMTs with different gate-drain spacings showed that the RF-SOA does not depend on this spacing but rather on the gate's ability to withstand high RF signals before abrupt degradation occurs. Using an original nonlinear modeling method that considers the self-biasing phenomenon, devices with the AlGaN back-barrier proved to be more robust in RF as well. This is reflected in their later gain compression, up to +10 dB, without apparent electrical or structural degradation (as observed by photoluminescence). Regardless of the AlN/GaN variant, the RF stress degradation mechanism corresponds to the abrupt breakdown of the Schottky gate, leading to its failure. These results indicate that the components are more sensitive to DC bias conditions than to the level of injected RF signals [...]
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Bradley, Shawn Todd. « Investigation of AlGaN films and nickel/AlGaN Schottky diodes using depth-dependent cathodoluminescence spectroscopy and secondary ion mass spectrometry ». Columbus, Ohio : Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1078329692.

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Thesis (Ph. D.)--Ohio State University, 2004.
Title from first page of PDF file. Document formatted into pages; contains xxii, 182 p.; also includes graphics (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 173-182).
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Taking, Sanna. « AlN/GaN MOS-HEMTs technology ». Thesis, University of Glasgow, 2012. http://theses.gla.ac.uk/3356/.

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The ever increasing demand for higher power devices at higher frequencies has prompted much research recently into the aluminium nitride/gallium nitride high electron mobility transistors (AlN/GaN HEMTs) in response to theoretical predictions of higher performance devices. Despite having superior material properties such as higher two-dimensional electron gas (2DEG) densities and larger breakdown field as compared to the conventional aluminium gallium nitride (AlGaN)/GaN HEMTs, the AlN/GaN devices suffer from surface sensitivity, high leakage currents and high Ohmic contact resistances. Having very thin AlN barrier layer of ∼ 3 nm makes the epilayers very sensitive to liquids coming in contact with the surface. Exposure to any chemical solutions during device processing degrades the surface properties, resulting in poor device performance. To overcome the problems, a protective layer is employed during fabrication of AlN/GaN-based devices. However, in the presence of the protective/passivation layers, formation of low Ohmic resistance source and drain contact becomes even more difficult. In this work, thermally grown aluminium oxide (Al2O3) was used as a gate di- electric and surface passivation for AlN/GaN metal-oxide-semiconductor (MOS)-HEMTs. Most importantly, the Al2O3 acts as a protection layer during device processing. The developed technique allows for a simple and effective wet etching optimisation using 16H3PO4:HNO3:2H2O solution to remove Al from the Ohmic contact regions prior to the formation of Al2O3 and Ohmic metallisation. Low Ohmic contact resistance (0.76Ω.mm) as well as low sheet resistance (318Ω/square) were obtained after optimisation. Significant reduction in the gate leakage currents was observed when employing an additional layer of thermally grown Al2O3 on the mesa sidewalls, particularly in the region where the gate metallisation overlaps with the exposed channel edge. A high peak current ∼1.5 A/mm at VGS=+3 V and a current-gain cutoff frequency, fT , and maximum oscillation frequency, fMAX , of 50 GHz and 40 GHz, respectively, were obtained for a device with 0.2 μm gate length and 100 μm gate width. The measured breakdown voltage, VBR, of a two-finger MOS-HEMT with 0.5μm gate length and 100 μm gate width was 58 V. Additionally, an approach based on an accurate estimate of all the small-signal equivalent circuit elements followed by optimisation of these to get the actual element values was also developed for AlN/GaN MOS-HEMTs. The extracted element values provide feedback for further device process optimisation. The achieved results indicate the suitability of thermally grown Al2O3 for AlN/GaN-based MOS-HEMT technology for future high frequency power applications.
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Xiao, Xiao Mr. « Purification and Characterization of Rhodobacter sphaeroides Polyhistidine-tagged HemA and Comparison with Purified Polyhistidine-tagged HemT ». Bowling Green State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1371650467.

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John, Dylan Boone. « Atomistic Modeling of AlN/GaN HEMTs for Applications in Harsh Environments ». OpenSIUC, 2011. https://opensiuc.lib.siu.edu/theses/572.

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AlN/GaN high-electron mobility transistors (HEMT) are subject to internal structural and electrostatic fields originating mainly from: (i) the fundamental crystal atomicity and the interface discontinuity between dissimilar materials, (ii) atomistic strain, (iii) piezoelectricity, and (iv) spontaneous polarization (pyroelectricity). In this thesis, through numerical simulations, we have studied the origin and effects of these competing internal fields on the electrostatics and the I-V characteristic of scaled nitride HEMT structures. It is shown that strain in these devices is asymmetric and long-ranged (demanding simulations using millions of atoms). The resulting piezoelectric polarization is arge and atomistic in nature. However, the pyroelectric potential is significantly larger than the piezoelectric counterpart and opposes the latter at the InN/GaN interface as opposed to AlGas which only produces a piezoelectric potential. The polarization induced charge density is computed using a three-dimensional Poisson solver and shown to be strongly dependent on the thickness of the AlN barrier layer. This finding has been validated using available experimental data. We have also demonstrated that the olarization fields alone can induce channel carriers at zero external bias and lead to a significant increase in the ON current.
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Coulianos, Natalie N. G. « A comparison of ALA synthase gene transcription in three wild type strains of Rhodobacter sphaeroides ». Bowling Green State University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1308169087.

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Tilstra, Liesbeth. « Grenzen aan het stakingsrecht : het Nederlandse rechtsoordeel over collectieve actie van werknemers getoetst aan het Europees Sociaal Handvest / ». Deventer : Kluwer, 1994. http://www.gbv.de/dms/spk/sbb/recht/toc/272312207.pdf.

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Libkind, Marianna. « SiaA : A Heme Protein ». Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/chemistry_hontheses/2.

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The protein SiaA (Streptococcal iron acquisition) is involved in heme uptake in the bacterium Streptococcus pyogenes. It is difficult to obtain this protein in its fully holo form (completely loaded with heme). To increase the concentration of heme in the growing cell, we added ä-aminolevulinic acid (ALA) and ferrous sulfate (FeSO4), precursors of heme, to the growth media. Neither increasing the concentration of heme in vivo, nor growth at lower temperature for longer times, increased the production of holoprotein. The classical method of measuring the concentration of heme in a newly discovered heme protein is cumbersome. We have developed an improved method, which gives a solution that is more stable and has a cleaner spectrum. With further development, this new technique may replace the classical assay. Background information on S. pyogenes, SiaA, ABC transporters, heme biosynthesis, and the pyridine hemochrome assay are described.
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Livres sur le sujet "HEMT AlN"

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Bemis/Flaherty Collection of Gay Poetry, dir. All the heat we could carry : Poems. Charlotte, North Carolina : Main Street Rag Publishing Company, 2013.

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Børretzen, Odd. Helt all right : De beste tekstene i utvalg. 4e éd. Oslo : Juritzen forlag, 2012.

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Javier, Valenzuela, Sixsmith Herbert et United States. National Aeronautics and Space Administration., dir. All-metal compact, heat exchanger for space cryocoolers. Hanover, NH : Creare Inc., 1990.

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A, Valenzuela Javier, Sixsmith Herbert et United States. National Aeronautics and Space Administration., dir. All-metal compact, heat exchanger for space cryocoolers. Hanover, NH : Creare Inc., 1990.

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Alba, Juanita. Calor : A story of warmth for all ages. Waco, Tex : WRS Pub., 1995.

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Office, Energy Efficiency. All electric, air-conditioned office uses heat pump technology. London : Department of the Environment, 1994.

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Aẍale, Rostem. Hemû rêgakan deçinewe Kurdistan : All roads lead to Kurdistan. Hewlêr, Herêmî Kurdistanî ʻÊraq : Dezgay Çap u Biławkirdinewey Aras, 2011.

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Karen, Hunter, dir. Wendy's got the heat : [the queen of radio bares all]. New York : Pocket Books, 2004.

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Giebels, Ludy. Jacob Israël de Haan in het Palestijnse labyrint, 1919-1924. Nieuwe Prinsengracht 89 1018 VR Amsterdam Nederland : Amsterdam University Press, 2024. http://dx.doi.org/10.5117/9789048563838.

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Jacob Israël de Haan was romanschrijver, dichter en jurist. In Nederland was hij bekend als schrijver van Pijpelijntjes (1904), een roman waarin openlijk homoseksualiteit werd beschreven. Hij bekeerde zich tot het zionisme en emigreerde in 1919 naar Palestina als correspondent voor het Algemeen Handelsblad. Zijn feuilletons schetsen een levendig beeld van de politieke situatie en het leven van alledag in het nieuwe Joods Nationaal Tehuis, dat zich dankzij de Balfour Declaratie in Palestina ontwikkelde. In Jeruzalem sloot hij zich echter al snel aan bij de anti- zionistische ultraorthodoxe gemeenschap van rabbijn Chaim Sonnenfeld en bij de Agoedat Israël, de internationale organisatie van orthodoxe Joden. Hij werd hun juridisch adviseur en politiek woordvoerder in hun conflict met de zionistische organisatie. De Haan leverde onder andere kritiek op deze organisatie omdat zij bij de verwezenlijking van het Joods Nationaal Tehuis te weinig rekening hield met de Palestijnse Arabieren, die negentig procent van de bevolking uitmaakten. In juni 1924 werd hij door een zionistische commando vermoord.
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Kraaijeveld, Jacques. Wat scheelt er aan ? : Wat u altijd al over uw huisarts hebt willen weten, maar nooit hebt durven vragen. Amersfoort : Novella, 1996.

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Chapitres de livres sur le sujet "HEMT AlN"

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Verma, Yogesh Kumar, Varun Mishra, Rajan Singh, Trupti Ranjan Lenka et Santosh Kumar Gupta. « Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design ». Dans HEMT Technology and Applications, 221–31. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_15.

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Das, Akash, Aishwarya Tomar, Subhankar Das et Rahul Kumar. « AlN/β-Ga2O3 HEMT for Low-Noise Amplifier ». Dans Lecture Notes in Electrical Engineering, 305–16. Singapore : Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-5269-0_25.

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Singh, Rajan, Trupti Ranjan Lenka et Hieu Pham Trung Nguyen. « 3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics ». Dans HEMT Technology and Applications, 93–103. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_7.

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Khan, Abdul Naim, S. N. Mishra, Meenakshi Chauhan, Kanjalochan Jena et G. Chatterjee. « Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT ». Dans HEMT Technology and Applications, 39–51. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_3.

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Chauhan, Meenakshi, Abdul Naim Khan, Raghuvir Tomar et Kanjalochan Jena. « Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT ». Dans Lecture Notes in Electrical Engineering, 71–78. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2308-1_8.

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Prasad, Santashraya, et A. Islam. « Influence of AlN Spacer Layer on SiN-Passivated AlGaN/GaN HEMT ». Dans Lecture Notes in Electrical Engineering, 233–42. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0412-9_20.

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Das, Shreyasi, Vandana Kumari, Mridula Gupta et Manoj Saxena. « Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer ». Dans Computers and Devices for Communication, 459–64. Singapore : Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8366-7_68.

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Ranjan, Ravi, Nitesh Kashyap et Ashish Raman. « Effect of AlN Spacer Layer on the Proposed MIS-AlGaN/GaN HEMT ». Dans Lecture Notes in Electrical Engineering, 1115–21. Singapore : Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7031-5_106.

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Sufiyan, Nudrat, et Anup Kumar Sharma. « Analytical Modeling and Simulation Study of Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN HEMT Device ». Dans Lecture Notes in Electrical Engineering, 497–506. Singapore : Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6855-8_38.

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Alamgir, Imtiaz, et Aminur Rahman. « 2D Simulation of Static Interface States in GaN HEMT with AlN/GaN Super-Lattice as Barrier Layer ». Dans Proceedings of International Conference on Soft Computing Techniques and Engineering Application, 457–65. New Delhi : Springer India, 2013. http://dx.doi.org/10.1007/978-81-322-1695-7_53.

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Actes de conférences sur le sujet "HEMT AlN"

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Jiang, Xiangle, Minhan Mi, Can Gong, Yuwei Zhou, Tianhao Liu et Xiaohua Ma. « Simulation on AlN/GaN/AlN/GaN Planar HEMT and Fin-HEMT for Low-Voltage Applications ». Dans 2024 21st China International Forum on Solid State Lighting & ; 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA : IFWS), 304–6. IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835385.

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Bashkatov, Dmitriy D., Timur V. Malin, Vladimir G. Mansurov, Dmitry Yu Protasov, Denis S. Milakhin et Konstantin S. Zhuravlev. « Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures ». Dans 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM), 120–25. IEEE, 2024. http://dx.doi.org/10.1109/edm61683.2024.10615105.

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Huang, Mingzhi, Kai Liu, Chong Wang et Ziheng Yu. « Study of p-GaN Gate HEMT with ALN Cap Layer ». Dans 2024 21st China International Forum on Solid State Lighting & ; 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA : IFWS), 210–12. IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835364.

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Namdeo, Eshaan, et Sukwinder Singh. « Substrate-Dependent Characteristics of AlGaN/AlN/GaN DH-HEMT : A Comprehensive Study ». Dans 2024 International Conference on Electrical Electronics and Computing Technologies (ICEECT), 1–6. IEEE, 2024. http://dx.doi.org/10.1109/iceect61758.2024.10739025.

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Haque, Sanaul, Cristina Andrei, Mihaela Wolf, Oliver Hilt et Matthias Rudolph. « Switch Integrated Ka-Band Low Noise Amplifier in GaN/AlN HEMT Technology ». Dans 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 351–54. IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732731.

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Hidayat, Wagma, Muhammad Usman, Syeda Wageeha Shakir, Anum ., Iqra Anjum, Shazma Ali et Laraib Mustafa. « Breaking performance barriers : AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED ». Dans Fourth iiScience International Conference 2024 : Recent Advances in Photonics and Physical Sciences, sous la direction de M. Yasin A. Raja, Syed A. Haider et Zohra N. Kayani, 2. SPIE, 2024. https://doi.org/10.1117/12.3051934.

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Said, N., D. Saugnon, K. Harrouche, F. Medjdoub, N. Labat, N. Malbert et J.-G. Tartarin. « RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier : nonlinear model analysis ». Dans 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2–5. IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732162.

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Song, Zeyu, Hanghai Du, Zhihong Liu, Han Wang, Weichuan Xing, Jincheng Zhang et Yue Hao. « Strong Polarization AlN/GaN/Si Heterojunction MIS-HEMT for Mm-Wave Low-Voltage Terminal Applications ». Dans 2024 IEEE International Conference on IC Design and Technology (ICICDT), 1–3. IEEE, 2024. http://dx.doi.org/10.1109/icicdt63592.2024.10717668.

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Geng, Xiaomeng, Nick Wieczorek, Mihaela Wolf, Oliver Hilt et Sibylle Dieckerhoff. « Modeling of a Novel GaN-on-AlN/SiC HEMT Including Thermal Effects for Circuit Simulation ». Dans 2024 IEEE Energy Conversion Congress and Exposition (ECCE), 6731–37. IEEE, 2024. https://doi.org/10.1109/ecce55643.2024.10861295.

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Fouzi, Y., E. Morvan, Y. Gobil, F. Morisot, E. Okada, S. Bollaert et N. Defrance. « Nonlinear Modeling of CMOS Compatible SiN/AlN/GaN MIS-HEMT on 200mm Si Operating at mm-Wave Frequencies ». Dans 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 303–6. IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732270.

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Rapports d'organisations sur le sujet "HEMT AlN"

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Xing, Huili, et Debdeep Jena. Stacked Quantum Wire AlN/GaN HEMTs. Fort Belvoir, VA : Defense Technical Information Center, avril 2012. http://dx.doi.org/10.21236/ada580523.

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Guérin, Laurence, Patrick Sins, Lida Klaver et Juliette Walma van der Molen. Onderzoeksrapport Samen werken aan Bèta Burgerschap. Saxion, 2021. http://dx.doi.org/10.14261/ff0c6282-93e2-41a7-b60ab9bceb2a4328.

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In het TechYourfuture project ‘Samen werken aan Bèta Burgerschap’, dat plaats vond in de periode maart 2015 - maart 2020, gaven de onderzoekers samen met scholen en bedrijven concreet invulling aan burgerschapsonderwijs. De maatschappij en maatschappelijke vraagstukken worden steeds complexer. Politieke, technologische, economische, sociaal-culturele of ecologische aspecten van een vraagstuk zijn met elkaar verweven. Daarnaast spelen ook globale en lokale dimensies een rol. Er zijn alleen hierdoor al meerdere antwoorden mogelijk op een vraagstuk. Gedurende het project hebben basisschoolleerlingen (wereldwijde) maatschappelijk-technologische vraagstukken geanalyseerd, bediscussieerd en daar oplossingen voor bedacht. Leraren hebben in het project geleerd bèta burgerschap activiteiten te ontwikkelen, uit te voeren en te evalueren. In de kern gaat het er in Bèta Burgerschap om dat leerlingen door groepsgewijs vraagstukken op te lossen burgerschapscompetenties ontwikkelen. Het gaat hier om drie hoofdcompetenties: (1.) Collectieve argumentatievaardigheden, (2.) Attituden ten opzichte van maatschappelijk technologische vraagstukken en, (3.) Bèta- en techniekkennis. In het onderzoek ‘Samen werken aan Bèta Burgerschap’ is gekeken naar de ontwikkeling van deze drie hoofdcompetenties bij leerlingen die deelnamen aan Bèta Burgerschap activiteiten, alsook naar de effecten van de training en video-coaching die de leerkrachten in het project gevolgd hebben. De resultaten hiervan zijn in het onderzoeksrapport te lezen. Het onderzoek laat zien dat Bèta Burgerschap een aanpak is die leerlingen mogelijkheden biedt om te oefenen met groepsgewijs probleem oplossen als burgerschapscompetentie. Door op school met maatschappelijk-technologische vraagstukken aan de slag te gaan, doen leerlingen meer kennis op over deze vraagstukken en worden zij zich meer bewust van wat er in de wereld speelt en van hoe zij zich verhouden tot deze vraagstukken. Om met Bèta Burgerschap aan de slag te gaan en het netwerk denken en de discussie doeltreffend te begeleiden, blijkt het professionaliseringstraject van toegevoegde waarde te zijn.
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Veilleux, Richard, et David Levy. Potato Germplasm Development for Warm Climates. United States Department of Agriculture, octobre 1992. http://dx.doi.org/10.32747/1992.7561057.bard.

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Complex potato hybrids derived from crosses between cv. Atlantic and 11 clones of three genomic compositions, all with an unadapted component from previously identified heat tolerant accessions, were evaluated in the field in Israel and Virginia and in controlled environments in Israel. Heat tolerance was exhibited in the field by the ability of many of these hybrids to tuberize under severe heat stress when cv. Atlantic did not tuberize at all. The complex hybrids also exhibited fewer internal defects (heat necrosis, hollow heart) than Atlantic. Studies to determine if heat stress applied during anther culture or to pollen samples prior to pollination could affect gametic selection towards more heat tolerant progenies were also undertaken. There was some evidence of greater heat tolerance (longer survival under heat stress) in the anther-derived population that had been regenerated under heat stress. The seedlings resulting from crosses with heat-treated pollen also exhibited greater haulm growth under heat stress compared with controls. However, the poor adaption of the germplasm prevented a firm conclusion about gametic selection. The introduction of exotic germplasm into cultivated potato has considerable potential to adapt potato to nontraditional growing seasons and climates. However, such hybrids will require continued selection and evaluation to retain the traits required for commercial production.
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Kasza, K. E. ANL ITER high-heat-flux blanket-module heat transfer experiments. Office of Scientific and Technical Information (OSTI), février 1992. http://dx.doi.org/10.2172/7233786.

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Xing, Huili G., et Debdeep Jena. Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications. Fort Belvoir, VA : Defense Technical Information Center, février 2011. http://dx.doi.org/10.21236/ada538446.

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Blankestijn, Wouter, Walter Verspui, Jan Fliervoet et Loes Witteveen. Rapport onderzoek Tuinverhalen. Lectoraat Communicatie, Participatie & Sociaal-Ecologisch Leren (CoPSEL), mai 2024. http://dx.doi.org/10.31715/2024.2.

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Tuinvergroening is een belangrijk onderdeel van de aanpak van (stedelijke) maatregelen tegen klimaatverandering en biodiversiteitsverlies. De achtertuin kan als het ware fungeren als een plek waar klimaatadaptie en natuurherstel op microniveau kan plaatsvinden. Ook al bestaan er veel interventiemethodes zoals groene tuintips en adviezen, is het belangrijk om deze te specificeren en tekoppelen aan de belevingswereld van verschillende tuinbezitters. Binnen het projectburgerwetenschappelijke participatieproject Pientere Tuinen rondom tuinvergroening is er de wens om een beter beeld te krijgen van de motivaties en belemmeringen. In opvolging van een kwantitatief onderzoek onder projectdeelnemers doet dit rapport verslag van een opvolging op basis van interviews met zeven tuinbezitters in de Regenboogbuurt, Almere als case study. Deze bewoners is gevraagd wat hun motiveert of tegenhoudt rondom de inrichting van de achtertuin om een beterbeeld te krijgen waar mogelijke barrières liggen rondom vergroening.
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Kasza, K. E. ANL ITER high-heat-flux blanket-module heat transfer experiments. Fusion Power Program. Office of Scientific and Technical Information (OSTI), février 1992. http://dx.doi.org/10.2172/10161439.

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van Rooij, Sabine, Anouk Cormont, Nynke Lokhorst, Renze van Och, Menno Reemer, Robbert Snep, Joop Spijker et al. Training samen werken aan het bijenlandschap. Wageningen : Alterra Wageningen UR, 2020. http://dx.doi.org/10.18174/520308.

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Olson, Douglas A. Heat transfer in an aluminum heat exchanger using normal hydrogen gas :. Gaithersburg, MD : National Institute of Standards and Technology, 1994. http://dx.doi.org/10.6028/nist.ir.3987.

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Henning, Brian, Kaitlan Ducken, Karli Honebein, Corrina Farho et Ben Brown. Spokane Beat the Heat : Correlations of Urban Heat with Race and Income in Spokane, Washington. Center for Climate, Society, and the Environment, 2023. http://dx.doi.org/10.33972/ccse.2023.01.

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The Gonzaga Center for Climate, Society, and the Environment led a community effort to better understand how extreme heat affects different neighborhoods and different individuals by constructing maps of urban heat island and connecting them to demographic factors through a correlation analysis. This research reveals that extreme heat events affect not only the unhoused, but also many thousands of people across large segments of the Spokane community. Not all regions or demographics in Spokane are equally affected by extreme heat. Differences in green space and the built environment mean that some people are more likely to be in danger during future extreme heat events.
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