Thèses : « Heterojunction bipolar transistor (HBT’s) »

1

Xu, Ziyan Niu Guofu. « Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs ». Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.

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Pan, Jun Niu Guofu. « Systematic characterization and modeling of small and large signal performance of 50 - 200 GHz SiGe HBTs ». Auburn, Ala., 2005. http://repo.lib.auburn.edu/2005%20Summer/doctoral/PAN_JUN_24.pdf.

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3

Zhang, Yongjian. « Investigation of electrical and optical characterisation of HBTs for optical detection ». Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/investigation-of-electrical-and-optical-characterisation-of-hbts-for-optical-detection(3c47e08f-9201-4465-b2b5-268aa0360309).html.

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In this thesis, a detailed study of the electrical and optical characterisations of Heterojuction Bipolar Transistors (HBTs) for optical detection is presented. By comparing both DC and optical characterisations between In0.49Ga0.51P/GaAs Single Heterojuction Bipolar Transistors (SHBTs) and Double Heterojuction Bipolar Transistors (DHBTs), the advantages of using the DHBT as a short wavelength detector are shown. Phenomena related to the base region energy band bending in the DHBT caused by a self-induced effective electric field is discussed and its effects on the performance of the device are elaborated. The use of an eye diagram has been employed to provide requisite information for performance qualification of SHBT/DHBT devices. These give a more detailed understanding compared to conventional S-parameters method. A detailed comparison of In0.49Ga0.51P/GaAs SHBT and DHBT performance using an eye diagram as a functional tool by adopting a modified T-shaped small signal equivalent circuit are given. By adopting this modified T-shaped small signal equivalent circuit, the use of In0.49Ga0.51P/GaAs Double Heterojuction Phototransistors (DHPT) as a short wavelength photodetector is analysed. It is therefore shown that an eye diagram can act as a powerful tool in HBTs/HPTs design optimisations, for the first time in this work. In order to predict the spectral response (SR) and optical characterisations of GaAs-based HPTs, a detailed theoretical absorption model is also presented. The layer dependence of an optical flux absorption profile, along with doping dependent absorption coefficients are taken into account for the optical characterisation prediction. With the aim of eliminating the limitation of current gain as a prerequisite, analytical modelling of SR has been developed by resolving the continuity equation and applying realistic boundary conditions. Then, related physical parameters and a layer structure profile are used to implement simulations. A good agreement with the measured results of the Al0.3Ga0.7As/GaAs HPT is shown validating the proposed theoretical model.

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Yuan, Jiahui. « SiGe HBTs Operating at Deep Cryogenic temperatures ». Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14609.

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As Si-manufacturing compatible SiGe HBTs are making rapid in-roads into RF through mm-wave circuit applications, with performance levels steadily marching upward, the use of these devices under extreme environment conditions are being studied extensively. In this work, test structures of SiGe HBTs were designed and put into extremely low temperatures, and a new negative differential resistance effect and a novel collector current kink effect are investigated in the cryogenically-operated SiGe HBTs. Theory based on an enhanced positive feedback mechanism associated with heterojunction barrier effect at deep cryogenic temperatures is proposed. The accumulated charge induced by the barrier effect acts at low temperatures to enhance the total collector current, indirectly producing both phenomena. This theory is confirmed using calibrated 2-D DESSIS simulations over temperature. These unique cryogenic effects also have significant impact on the ac performance of SiGe HBTs operating at high-injection. Technology evolution plays an important role in determining the magnitude of the observed phenomena, and the scaling implications are addressed. Circuit implication is discussed.

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CHIRALA, MOHAN KRISHNA. « DESIGN, SIMULATION AND MODELING OF COLLECTOR-UP GalnP/GaAs HETEROJUNCTION OF BIPOLAR TRANSISTORS ». University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1027960962.

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6

Rennane, Abdelali. « Caractérisation et modélisation du bruit basse fréquence des composants bipolaires et à effet de champ pour applications micro-ondes ». Toulouse 3, 2004. http://www.theses.fr/2004TOU30236.

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Le travail présenté dans ce mémoire a pour objet principal l’étude des phénomènes de bruit du fond électrique basse fréquence dans des transistors pour applications micro-ondes de type effet de champ (HEMT) sur SiGe et GaN ainsi que de type bipolaire à hétérojonction (TBH) à base de silicium-germanium (SiGe). Dans un premier chapitre nous rappelons les caractéristiques et propriétés essentielles des sources de bruit en excès que l’on rencontre généralement dans ce type de composants et proposons une description des bancs de mesure de bruit mis en oeuvre. Dans les deuxième et troisième chapitres, nous proposons une analyse détaillée de l’évolution du bruit observé en fonction de la fréquence, de la polarisation, et de la géométrie sur des HEMTs des deux familles technologiques SiGe et GaN. Nous avons en particulier étudié les deux générateurs de bruit en courant en entrée et en sortie respectivement iG et iD ainsi que leur corrélation. Ceci nous a permis, en nous appuyant aussi sur l’analyse des caractéristiques statiques des transistors, d’identifier les diverses sources de bruit en excès présentes dans ces composants et de faire des hypothèses sur leurs origines. Le dernier chapitre est consacré aux TBHs à base de SiGe. Dans une première partie nous établissons comment varie le bruit basse fréquence de TBHs, fabriqués par un premier constructeur, en fonction de la polarisation, de la géométrie et de la fraction molaire de germanium. Dans une seconde partie nous mettons en évidence, d’après nos observations effectuées sur des TBHs fabriqués par un second constructeur, l’impact important sur le bruit BF de stress thermiques appliqués sur ce type de composants
This thesis deals mainly with electrical noise in microwave silicon germanium (SiGe) and gallium nitride (GaN) field effect transistors (HEMT’s) and SiGe heterojunction bipolar transistors (HBT’s). The organisation of this memory is as follows, in first chapter, we remember the important properties of excess noise sources encountered in these type devices. In addition, we describe the measurement set-ups used for static and noise characterization. In the second and third chapters, a thoroughful analysis of the noise dependence on frequency, bias, and geometry of both SiGe and GaN HEMT’s, has been carried out, specifically, the input and output current noise sources respectively iG and iD and their correlation. This in combination with static characterization, allowed to identify the different noise sources present in these devices and their supposed origin. .

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7

Grens, Curtis Morrow. « Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers ». Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29622.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Cressler, John; Committee Member: Gerhardt, Rosario; Committee Member: Ingram, Mary Ann; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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Sutton, Akil K. « Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors ». Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7217.

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A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behin the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.

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9

Zhu, Chendong. « The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors ». Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14647.

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The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simulations. Chapter 4 assesses the reliability of SiGe HBTs in extreme temperature environments by way of comprehensive experiments and MEDICI simulations. A comparison of the device lifetimes for reverse-EB stress and mixed-mode stress indicates different damage mechanisms govern these phenomena. The thesis concludes with a summary of the project and suggestions for future research in chapter 5.

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Appaswamy, Aravind. « Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments ». Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33970.

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The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse mode operation of SiGe HBTs is investigated as a potential solution to the vulnerability of SiGe HBTs to single event effects. The performance limitations of SiGe HBTs operating in inverse mode are investigated through an examination of the effects of scaling on inverse mode performance and optimization schemes for inverse mode performance enhancements are discussed and demonstrated. In addition the performance of scaled MOSFETs, that constitute the digital backbone of any BiCMOS technology, is investigated under radiation exposure and cryogenic temperatures. Extreme environments and their effects on semiconductor devices are introduced in Chapter 1. The immunity of 90nm MOSFETs to total ionizing dose damage under proton radiation is demonstrated. Inverse mode operation of SiGe HBTs is introduced in Chapter 2 as a potential radiation hard solution by design. The effect of scaling on inverse mode performance of SiGe HBTs is investigated and the performance limitations in inverse mode are identified. Optimization schemes for improving inverse mode performance of SiGe HBTs are discussed in Chapter 3. Inverse mode performance enhancement is demonstrated experimentally in optimized device structures manufactured in a commercial third generation SiGe HBT BiCMOS platform. Further, a cascode device structure, the combines the radiation immunity of an inverse mode structure with the performance of a forward mode common emitter device is XIV discussed. Finally, idealized doping profiles for inverse mode performance enhancement is discussed through TCAD simulations. The cryogenic performance of inverse mode SiGe HBTs are discussed in Chapter 4. A novel base current behavior at cryogenic temperature is identified and its effect on the inverse mode performance is discussed. Matching performance of a 90nm bulk CMOS technology at cryogenic temperatures is investigated experimentally and through TCAD simulations in Chapter 5. The effect of various process parameters on the temperature sensitivity of threshold voltage mismatch is discussed. The potential increase of mismatch in subthreshold MOSFETs operating in cryogenic temperatures due to hot carrier effects is also investigated.

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11

Chik, Hope Wuming. « Emitter-up heterojunction bipolar transistor-compatible laser ». Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0014/MQ34129.pdf.

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12

Hall, S. « An integrated Schottky-collector heterojunction bipolar transistor ». Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384387.

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13

Cheng, Peng. « Reliability of SiGe HBTs for extreme environment and RF applications ». Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/42836.

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The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Excess base leakage current was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into SiGe power amplifier design to predict the DC and RF stress-induced excess base current. Based on these studies, characterization of RF safe-operating-area for SiGe HBTs using devices and circuits is proposed.

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14

Ghosh, Sudip. « Electronical model evaluation and development of compact model including aging for InP heterojunction bipolar transistors (HBTs) ». Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14451/document.

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Les technologies de transistors bipolaires à hétérojonctions (HBT) ont montré leur efficacité pour permettre aux circuits de traiter les grands signaux au delà de 100Gbit/s pour les réseaux optiques Ethernet. Pour assurer ce résultat, une bonne fiabilité doit être garantie. Des tests de vieillissements accélérés sous contraintes thermiques et électrothermiques sont réalisés et analysés avec les outils de simulation physique Sentaurus TCAD afin d’obtenir les lois de vieillissement physiques. Le modèle compact HICUM niveau 2, basé sur la physique, est utilisé pour modéliser précisément le composant avant vieillissement, puis pour ajuster les caractéristiques intermédiaires pendant le vieillissement. L’évolution des paramètres du modèle est décrit avec des équations appropriées pour obtenir un modèle électrique compact du vieillissement basé sur la physique. Les lois de vieillissement et les équations d’évolutions des paramètres avec le temps de contrainte sont implantées dans le modèle électrique de vieillissement en langage Verilog-A, ce qui permet de simuler l’impact des mécanismes de défaillances sur le circuit en conditions opérationnelles
Modern InP Heterojunction Bipolar Transistors (HBT) technology has shown its efficiency for making large signal ICs working above 100 Gbits/s for Ethernet optical transport network. To full-fill this expectation, a good reliability has to be assured. Accelerated aging tests under thermal and electro-thermal stress conditions are performed and analyzed with Sentaurus TCAD device simulation tools to achieve the physical aging laws. The physics based advanced bipolar compact model HICUM Level 2 is used for precise modeling of the devices before aging. The HICUM parameters are extracted to fit the intermediate characterizations during aging. The evolution of the model parameters is described with suitable equations to achieve a physics based compact electrical aging model. The aging laws and the parameter evolution equations with stress time are implemented in compact electrical aging model in Verilog-A languages which allows us to simulate the impact of device failure mechanisms on the circuit in operating conditions

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15

Mawby, P. A. « Characterisation and fabrication of heterojunction bipolar transistors ». Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383334.

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Cheng, Peng. « A Current Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SIGe HBTS ». Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19756.

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In this work a new current-sweep stress methodology for quantitatively assessing the mixed-mode reliability (simultaneous application of high current and high voltage) of advanced SiGe HBTs is presented. This stress methodology allows one to quickly obtain the complete damage spectrum of a given device from a particular technology platform, enabling better understanding of the complex voltage, current, and temperature interdependence associated with electrical stress and burn-in of advanced transistors. We consistently observed three distinct regions of mixed-mode damage in SiGe HBTs, and find that hot carrier induced damage can be introduced into SiGe HBTs under surprisingly modest mixed-mode stress conditions. For more aggressively scaled silicon-germanium technology generations, a larger percentage of hot carriers generated in the collector-base junction are able to travel to and hence damage the EB spacer, leading to enhanced forward-mode base current leakage under stress. A new self-heating induced mixed-mode annealing effect was observed for the first time under fairly high voltage and current stress conditions, and a new damage mechanism was observed under very high voltage and current conditions. Finally, as an example of the utility of our stress methodology, we quantified the composite mixed-mode damage spectrum of a commercial third-generation (200 GHz) generation SiGe HBT. It is found that if devices are stressed with either voltage or current alone during burn-in, they can easily withstand extreme over-stress conditions. Unfortunately, devices were easily damaged when stressed with a combination of stress voltage and current, and this has significant implications for the device and circuit lifetime prediction under realistic mixed-signal operating conditions.

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RENNANE, Abdelali. « Caracterisation et modelisation du bruit basse frequence des composants bipolaires et a effet de champ pour applications micro-ondes ». Phd thesis, Université Paul Sabatier - Toulouse III, 2004. http://tel.archives-ouvertes.fr/tel-00009299.

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Le travail presente dans ce memoire a pour objet principal l'etude des phenomenes de bruit du fond electrique basse frequence dans des transistors pour applications micro-ondes de type effet de champ (HEMT) sur SiGe et GaN ainsi que de type bipolaire a heterojonction (TBH) a base de silicium-germanium (SiGe). Dans un premier chapitre nous rappelons les caracteristiques et proprietes essentielles des sources de bruit en exces que l'on rencontre generalement dans ce type de composants et proposons une description des bancs de mesure de bruit mis en oeuvre. Dans les deuxieme et troisieme chapitres, nous proposons une analyse detaillee de l'evolution du bruit observe en fonction de la frequence, de la polarisation, et de la geometrie sur des HEMTs des deux familles technologiques SiGe et GaN. Nous avons en particulier etudie les deux generateurs de bruit en courant en entree et en sortie respectivement iG et iD ainsi que leur correlation. Ceci nous a permis, en nous appuyant aussi sur l'analyse des caracteristiques statiques des transistors, d'identifier les diverses sources de bruit en exces presentes dans ces composants et de faire des hypotheses sur leurs origines. Le dernier chapitre est consacre aux TBHs a base de SiGe. Dans une premiere partie nous etablissons comment varie le bruit basse frequence de TBHs, fabriques par un premier constructeur, en fonction de la polarisation, de la geometrie et de la fraction molaire de germanium. Dans une seconde partie nous mettons en evidence, d'apres nos observations effectuees sur des TBHs fabriques par un second constructeur, l'impact important sur le bruit BF de stress thermiques appliques sur ce type de composants.

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18

Yüksel, Ayça. « The AlInP material system in heterojunction bipolar transistor technology ». Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/37728.

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Suvar, Erdal. « SiGeC Heterojunction Bipolar Transistors ». Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674.

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Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.

Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.

Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.

The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.

SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.

Key words:Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.

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Pratapgarhwala, Mustansir M. « Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors ». Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. Another part of the study involved measuring similar devices at different temperatures ranging from 298K to 377K. As a general trend, it was observed that device-to-device mismatch improved with increasing temperature.

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Lemna, Boyd. « GaInP/GaAs heterojunction bipolar transistor, empirical investigation at 29 GHz ». Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq22773.pdf.

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22

Yee, Mun Chun Marcus. « High current and voltage effects in heterojunction bipolar transistor collectors ». Thesis, University of Sheffield, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269460.

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Helme, John Peter. « Analytical charge control modelling of the speed response of heterojunction bipolar phototransistor and PIN-diode/heterojunction bipolar transistor photoreceivers ». Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425610.

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Guetre, Eric R. (Eric Rene) Carleton University Dissertation Engineering Electronics. « An Efficient Ka-band MMIC upconverter using a heterojunction bipolar transistor ». Ottawa, 1997.

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Lee, Yi-Che. « Development of III-nitride transistors : heterojunction bipolar transistors and field-effect transistors ». Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53472.

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The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave and quasi-static I-V and C-V measurements were carried out to characterize the fabricated III-N transistors and diodes. The GaN/InGaN direct-growth HBTs (DG-HBTs) grown on free-standing GaN (FS-GaN) substrates demonstrated a high current gain (hfe) > 110, high current density (JC) > 141 kA/cm2, and high power density (Pdc) > 3 MW/cm2. The first III-N DG-HBT showing fT > 8 GHz and fmax > 1.3 GHz were also demonstrated on sapphire substrates. Recessed-gate AlGaN/AlN/GaN HFETs demonstrated Vth = 0 V with 0.17 V deviation across the sample. Baliga's figure of merit is 240 MW/cm2 was achieved. Current collapse was eliminated and the dynamic on-resistance was reduced by 67% after using a remote-oxygen-plasma treatment. Normally-off recessed-gate AlGaN/AlN/GaN MISFETs with Vth = 0.9 V were also fabricated with the remote-oxygen-plasma treatment. Low leakage current (< 1 pA/mm), high on-off ratio (> 2.2E11) are achieved. These achievements suggest that high-performance III-N transistors are very promising for high-power switching and microwave amplification. Findings concerning remaining process issues and implications for future research are also discussed.

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Amin, Farid Ahmed. « Design, characterisation and reliability of ohmic contacts for HBT applications ». Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251977.

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Ahmed, Adnan. « Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology ». Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.

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This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.

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Roberts, Victoria. « The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications ». Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259846.

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Stein, Félix. « SPICE Modeling of TeraHertz Heterojunction bipolar transistors ». Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.

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Les études qui seront présentées dans le cadre de cette thèse portent sur le développement et l’optimisation des techniques pour la modélisation compacte des transistors bipolaires à hétérojonction (TBH). Ce type de modélisation est à la base du développement des bibliothèques de composants qu’utilisent les concepteurs lors de la phase de simulation des circuits intégrés. Le but d’une technologie BiCMOS est de pouvoir combiner deux procédés technologiques différents sur une seule et même puce. En plus de limiter le nombre de composants externes, cela permet également une meilleure gestion de la consommation dans les différents blocs digitaux, analogiques et RF. Les applications dites rapides peuvent ainsi profiter du meilleur des composants bipolaires et des transistors CMOS. Le défi est d’autant plus critique dans le cas des applications analogiques/RF puisqu’il est nécessaire de diminuer la puissance consommée tout en maintenant des fréquences de fonctionnement des transistors très élevées. Disposer de modèles compacts précis des transistors utilisés est donc primordial lors de la conception des circuits utilisés pour les applications analogiques et mixtes. Cette précision implique une étude sur un large domaine de tensions d’utilisation et de températures de fonctionnement. De plus, en allant vers des nœuds technologiques de plus en plus avancés, des nouveaux effets physiques se manifestent et doivent être pris en compte dans les équations du modèle. Les règles d’échelle des technologies plus matures doivent ainsi être réexaminées en se basant sur la physique du dispositif. Cette thèse a pour but d’évaluer la faisabilité d’une offre de modèle compact dédiée à la technologie avancée SiGe TBH de chez ST Microelectronics. Le modèle du transistor bipolaire SiGe TBH est présenté en se basant sur le modèle compact récent HICUMversion L2.3x. Grâce aux lois d’échelle introduites et basées sur le dessin même des dimensions du transistor, une simulation précise du comportement électrique et thermique a pu être démontrée.Ceci a été rendu possible grâce à l’utilisation et à l’amélioration des routines et méthodes d’extraction des paramètres du modèle. C’est particulièrement le cas pour la détermination des éléments parasites extrinsèques (résistances et capacités) ainsi que celle du transistor intrinsèque. Finalement, les différentes étapes d’extraction et les méthodes sont présentées, et ont été vérifiées par l’extraction de bibliothèques SPICE sur le TBH NPN Haute-Vitesse de la technologie BiCMOS avancée du noeud 55nm, avec des fréquences de fonctionnement atteignant 320/370GHz de fT = fmax
The aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology

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Laneve, Tony Carleton University Dissertation Engineering Electronics. « Empirical modeling of a GaAs/A1GaAs heterojunction bipolar transistor for microwave circuit applications ». Ottawa, 1995.

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Iqbal, Ahmer. « Heterojunction bipolar transistor based distributed amplifiers for fibre optic receiver front-end applications ». Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734182.

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Oka, Tohru. « Novel GaAs Heterojunction Bipolar Transistor Technologies for High-Speed and Low-Power Applications ». 京都大学 (Kyoto University), 2003. http://hdl.handle.net/2433/148898.

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Lidsky, David. « Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor ». Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/52591.

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Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the three designs, it is found that the linearly graded case has the lowest leakage current and the highest current gain. IV curves for all four possible classes of InAs/GaAs heterojunction (nN, nP, pN, pP) are calculated. A pN heterojunction is fabricated and characterized. In spite of the 7% lattice mismatch between InAs and GaAs, the diode has an ideality factor of 1.26 over three decades in the forward direction. In the reverse direction, the leakage current grows exponentially with the magnitude of the bias, and shows an effective ideality factor of 3.17, in stark disagreement with simulation. IV curves are taken over a temperature range of 105 K to 405 and activation energies are extracted. For benchmarking the device processing and the characterization apparatus, a conventional GaAs homojunction diode was fabricated and characterized, showing current rectification ratio of 109 between plus one volt and minus one volt. Because the PnP material for the optimal HBT design was not available, an Npn GaAs/InAs/InAs HBT structure was processed, characterized, and analyzed. The Npn device fails in both theory and in practice; however, by making a real structure, valuable lessons were learned for crystal growth, mask design, processing, and metal contacts.
Master of Science

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Schnyder, Iwan. « An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits / ». Konstanz : Hartung-Gorre, 2005. http://www.loc.gov/catdir/toc/fy0610/2006356171.html.

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Shah, Alam Huhmmad. « RF modelling of deep-submicron CMOS and heterojunction bipolar transistor for wireless communication systems ». Thesis, Queen's University Belfast, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269173.

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Konistis, Konstantinos 1973. « A heterojunction bipolar transistor with stepwise allog-graded base : analysis, design, fabrication, and characterization ». Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/28712.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 117-126).
(cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
This thesis explores the potential benefits of a GaAs-based heterojunction bipolar transistor (HBT) with stepwise alloy-graded base. The step height is slightly greater than the longitidinal optical (LO) phonon energy h[omega]LO in order to facilitate LO-phonon-enhanced forward diffusion of minority carriers in the base. The intuitive theoretical approach of carrier transport in the base, as proposed by other workers for this type of alloy-grading, did not incorporate in detail the various mechanisms of transport. In this work, we solved the Botzmann transport equation (BTE) in one dimension across the base for arbritrary frequencies. Impurity and LO phonon scattering were considered as the dominant scattering mechanisms. The intrinsic and extrinsic elements were combined and a small-signal equivalent circuit was proposed for the evaluation of the high-frequency performance of the device. The unique feature of this HBT is that the base transport factor undergoes a moderate magnitude attenuation and phase delay. By choosing a suitable collector delay, a band-limited negative output resistance can emerge in the microwave/millimeter-wave regime. The main benefit of the device is its inherent property as a transit-time high-frequency oscillator. Using our device simulator, we selected the material parameters for epitaxial growth (MBE) of the device wafer and we investigated various device layouts. We implemented the complete microfabrication of 2 [micro]m x 15 [micro]m, self-aligned, emitter-up HBTs with micro-airbridges for device isolation purposes. We performed DC measurements of various devices and they provided us with feedback for modifications in the MBE design and growth conditions of the device wafer. We finally fabricated HBTs with favorable DC
by Konstantinos Konistis.
Ph.D.

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BALARAMAN, PRADEEP ARUGUNAM. « DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS ». University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

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Lebby, M. S. « Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET) ». Thesis, University of Bradford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379863.

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Liu, Xiang. « Reliability study of InGaP/GaAs heterojunction bipolar transistor MMIC technology by characterization, modeling and simulation ». Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4967.

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HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.; Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high fsubscript T] and fsubscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region.
ID: 030423028; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2011.; Includes bibliographical references (p. 82-88).
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science

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Bellini, Marco. « Operation of silicon-germanium heterojunction bipolar transistors on ». Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28206.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.

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VUMMIDI, MURALI KRISHNA PRASAD. « Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping ». University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500.

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Malm, B. Gunnar. « High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors ». Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3324.

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Lee, Edwin Wendell II. « Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors ». The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143.

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Miyake, Hiroki. « Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors ». 京都大学 (Kyoto University), 2012. http://hdl.handle.net/2433/157593.

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Hussain, Abdulabbas A. « Design, simulation and fabrication of a self-aligned SiGe based heterojunction bipolar transistor for low-power operation ». Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0018/MQ48450.pdf.

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BREED, ANIKET AJITKUMAR. « SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES ». University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143.

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Quiroga, Andrés. « Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling ». Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112273/document.

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Le travail porte sur le développement et l’optimisation de transistors bipolaires à hétérojonction (TBH) SiGe et SiGeC par conception technologique assistée par ordinateur (TCAD). L'objectif est d'aboutir à un dispositif performant réalisable technologiquement, en tenant compte de tous les paramètres : étapes de fabrication technologiques, topologie du transistor, modèles physiques. Les études menées permettent d’atteindre les meilleures performances, en particulier une amélioration importante de la fréquence maximale d’oscillation (fMAX). Ce travail est la première approche développée pour la simulation des TBH SiGeC qui prend en compte l'impact de la contrainte et de la teneur en germanium et en carbone dans la base; conjointement pour les simulations des procédés de fabrication et les simulations électriques.Pour ce travail, nous avons développé et implémenté dans le simulateur TCAD des méthodes d'extraction de fMAX prenant en compte les éléments parasites intrinsèques et extrinsèques. Nous avons développé et implémenté un modèle pour la densité effective d’états fonction de la teneur en germanium et en carbone dans la base. Les modèles pour la bande interdite, la mobilité et le temps de relaxation de l'énergie sont calibrés sur la base de simulations Monte-Carlo.Les différentes analyses présentées dans cette thèse portent sur six variantes technologiques de TBH. Trois nouvelles architectures de TBH SiGeC avancés ont été élaborées et proposées pour des besoins basse et haute performance. Grace aux résultats obtenus, le meilleur compromis entre les différents paramètres technologiques et dimensionnels permettent de fabriquer un TBH SiGeC avec une valeur de fMAX de 500 GHz, réalisant ainsi l’objectif principal de la thèse
The present work investigates the technology development of state-of-the-art SiGe and SiGeC Heterojunction Bipolar Transistors (HBT) by means of technology computer aided design (TCAD). The objective of this work is to obtain an advanced HBT very close to the real device not only in its process fabrication steps, but also in its physical behavior, geometric architecture, and electrical results. This investigation may lead to achieve the best electrical performances for the devices studied, in particular a maximum operating frequency of 500 GHz. The results of this work should help to obtain more physical and realistic simulations, a better understanding of charge transport, and to facilitate the development and optimization of SiGe and SiGeC HBT devices.The TCAD simulation kits for SiGe/SiGeC HBTs developed during our work have been carried out in the framework of the STMicroelectronics bipolar technology evolution. In order to achieve accurate simulations we have used, developed, calibrated and implemented adequate process models, physical models and extraction methodologies. To our knowledge, this work is the first approach developed for SiGe/SiGeC HBTs which takes into account the impact of the strain, and of the germanium and carbon content in the base, for both: process and electrical simulations.In this work we will work with the successive evolutions of B3T, B4T and B5T technologies. For each new device fMAX improves of 100 GHz, thus the technology B3T matches to 300 GHz, B4T and B5T to 400 and 500 GHz, respectively.Chapter one introduces the SiGe SiGeC heterojunction bipolar technologies and their operating principles. This chapter deals also with the high frequency AC transistor operation, the extraction methods for fMAX and the carrier transport in extremely scaled HBTs.Chapter two analyzes the physical models adapted to SiGeC strained alloys used in this work and the electrical simulation of HBT devices. This is also an important work of synthesis leading to the selection, implementation and development of dedicated models for SiGeC HBT simulation.Chapter three describes the B3T TCAD simulation platform developed to obtain an advanced HBT very close to the real device. In this chapter the process fabrication of the B3T technology is described together with the methodology developed to simulate advanced HBT SiGeC devices by means of realistic TCAD simulations.Chapter four describes the HBT architectures developed during this work. We will propose low-cost structures with less demanding performance requirements and highly performing structures but with a higher cost of production. The B4T architecture which has been manufactured in clean-room is deeply studied in this chapter. The impact of the main fabrication steps is analyzed in order to find the keys process parameters to increase fMAX without degrading other important electrical characteristics. At the end of this chapter the results obtained is used to elaborate a TCAD simulation platform taking into account the best trade-off of the different key process parameters to obtain a SiGeC HBT working at 500 GHz of fMAX

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Yuan, Jiahui. « Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization ». Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33837.

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The objective of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate the performance limits of SiGe HBTs and provides essential information for further device scaling. Technology computer aided design (TCAD) and sophisticated on-wafer DC and RF measurements are essential in this research. Drift-diffusion (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector current kink effect in first-generation SiGe HBTs at deep cryogenic temperatures. A theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic temperatures is proposed to explain such effects. Intricate design of the germanium and base doping profiles can greatly suppress both carrier freezeout and the heterojunction barrier effect, leading to a significant improvement in the DC and RF performance for NASA lunar missions. Furthermore, cooling is used as a tuning knob to better understand the performance limits of SiGe HBTs. The consequences of cooling SiGe HBTs are in many ways similar to those of combined vertical and lateral device scaling. A case study of low-temperature DC and RF performance of prototype fourth-generation SiGe HBTs is presented. This study summarizes the performance of all three prototypes of these fourth-generation SiGe HBTs within the temperature range of 4.5 to 300 K. Temperature dependence of a fourth-generation SiGe CML gate delay is also examined, leading to record performance of Si-based IC. This work helps to analyze the key optimization issues associated with device scaling to terahertz speeds at room temperature. As an alternative method, an fT -doubler technique is presented as an attempt to reach half-terahertz speeds. In addition, a roadmap for terahertz device scaling is given, and the potential relevant physics associated with future device scaling are examined. Subsequently, a novel superjunction collector design is proposed for higher breakdown voltages. Hydrodynamic models are used for the TCAD studies that complete this part of the work. Finally, Monte Carlo simulations are explored in the analysis of aggressively-scaled SiGe HBTs.

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Lin, Yao-Chuan, et 林耀銓. « High Frequency Noise in Heterojunction Bipolar Transistors(HBTs) ». Thesis, 2003. http://ndltd.ncl.edu.tw/handle/77302158691315921099.

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碩士
中國文化大學
材料科學與製造研究所
91
Hawkins’ model was developed by R. J. Hawkins in 1977 and has been used in study noise in bipolar junction transistors ( BJTs ), primarily. In recent years, most of researchers are still using Hawkins’ model to study noise in heterojunction bipolar transistors ( HBTs ), but it can’t explain completely the high-frequency noise properties in HBTs. Because HBTs are operated at high current density and it has inferior thermal conductivity, a higher cutoff frequency, and a greater bandgap than BJTs . Therefore, the Hawkin’s noise model is unsuitable to study noise in HBTs. We incorporated the HBTs parameters just like emitter junction capacitance CTe, diffusion capacitance CDe, and base-collector depletion capacitance Cbc into our modified model. Finally, we obtained a new minimum noise figure( Fmin ), then compared with the measured data and showed a good agreement.

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Chen, Wei-Hsin, et 陳瑋鑫. « Fabrication of InAlGaAs/InP Heterojunction Bipolar Transistors (HBTs) ». Thesis, 2008. http://ndltd.ncl.edu.tw/handle/25891104509980138132.

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碩士
國立成功大學
微電子工程研究所碩博士班
96
Based on excellent high-speed and microwave performance, InP-based heterojunction bipolar transistor technology has been progressing rapidly over the past few years. The limitation of single heterojunction bipolar transistors comes from their dc characteristics. Double heterojunction bipolar transistors offer better output conductance and breakdown characteristics, but require more technical base-collector heterojunction design. In this thesis, we focus on the improved design of conventional device structures, the measurement and discussion of the device characteristics. We describe InP/InGaAs double heterojunction bipolar transistor with the step-graded InAlGaAs collector structure. The designed structure in this work exhibits the advantages of no knee-shaped characteristics, low output conductance, better three-terminal breakdown voltages. Even the studied device was operated at an extremely low collector current region, it still consists the characteristics of an amplifier. On the other hand, we also investigated and demonstrated the temperature-dependence characteristics of the single and double heterojunction bipolar transistors. Temperature-dependent two- and three-terminal measurements suggest that avalanche impact ionization phenomenon is the dominant breakdown mechanism in the collector layer.

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