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Articles de revues sur le sujet « III-V nanostructure »

Auteur : Grafiati

Publié le 9 mars 2023

Mis à jour le 31 juillet 2025

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1

Florini, Nikoletta, George P. Dimitrakopulos, Joseph Kioseoglou, Nikos T. Pelekanos, and Thomas Kehagias. "Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale." Journal of the Mechanical Behavior of Materials 26, no. 1-2 (2017): 1–8. http://dx.doi.org/10.1515/jmbm-2017-0009.

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AbstractWe are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at

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Pantle, Florian, Monika Karlinger, Simon Wörle, et al. "Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy." Journal of Applied Physics 132, no. 18 (2022): 184304. http://dx.doi.org/10.1063/5.0098016.

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GaN nanostructures are promising for a broad range of applications due to their 3D structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal facets, i.e., whether they are a-, m-plane, or of mixed orientation, impacts the stability and performance of GaN nanostructure-based devices. In this context, it is of great interest to control the formation of well-defined side facets. Here, we show that we can control the crystal facet formation at the nanowire sidewalls by tuning the III–V ratio during selective area growth by molecular beam epitaxy. Especially, the N f

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Babicheva, Viktoriia E. "Transition Metal Dichalcogenide Nanoantennas Lattice." MRS Advances 4, no. 41-42 (2019): 2283–88. http://dx.doi.org/10.1557/adv.2019.357.

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ABSTRACTHigh-index materials such as silicon and III-V compounds have recently gained a lot of interest as a promising material platform for efficient photonic nanostructures. Because of the high refractive index, nanoparticles of such materials support Mie resonances and enable efficient light control and its confinement at the nanoscale. Here we propose a design of nanostructure with multipole resonances where optical nanoantennas are made out of transition metal dichalcogenide, in particular, tungsten disulfide WS2. Transition metal dichalcogenide (TMDCs) possess a high refractive index and

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Ishikawa, Tomonori, Shigeru Kohmoto, Tetsuya Nishimura, and Kiyoshi Asakawa. "In situ electron-beam processing for III–V semiconductor nanostructure fabrication." Thin Solid Films 373, no. 1-2 (2000): 170–75. http://dx.doi.org/10.1016/s0040-6090(00)01128-7.

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Magno, R., and B. R. Bennett. "Nanostructure patterns written in III–V semiconductors by an atomic force microscope." Applied Physics Letters 70, no. 14 (1997): 1855–57. http://dx.doi.org/10.1063/1.118712.

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Zhang, Jiarui, and Chi Ma. "Recent Progress and Future Opportunities for Optical Manipulation in Halide Perovskite Photodetectors." Nanomaterials 15, no. 11 (2025): 816. https://doi.org/10.3390/nano15110816.

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Perovskite, as a promising class of photodetection material, demonstrates considerable potential in replacing conventional bulk light-detection materials such as silicon, III–V, or II–VI compound semiconductors and has been widely applied in various special light detection. Relying solely on the intrinsic photoelectric properties of perovskite gradually fails to meet the evolving requirements attributed to the escalating demand for low-cost, lightweight, flexible, and highly integrated photodetection. Direct manipulation of electrons and photons with differentiation of local electronic field t

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Kang, M., J. H. Wu, S. Huang, et al. "Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces." Applied Physics Letters 101, no. 8 (2012): 082101. http://dx.doi.org/10.1063/1.4742863.

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Boroditsky, M., I. Gontijo, M. Jackson, et al. "Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes." Journal of Applied Physics 87, no. 7 (2000): 3497–504. http://dx.doi.org/10.1063/1.372372.

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Abd-Elkader, Omar H., Abdullah M. Al-Enizi, Shoyebmohamad F. Shaikh, Mohd Ubaidullah, Mohamed O. Abdelkader, and Nasser Y. Mostafa. "Enhancing the Liquefied Petroleum Gas Sensing Sensitivity of Mn-Ferrite with Vanadium Doping." Processes 10, no. 10 (2022): 2012. http://dx.doi.org/10.3390/pr10102012.

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Mn-Ferrite with a nanostructure is a highly valuable material in various technological fields, such as electronics, catalysis, and sensors. The proposed article presents the hydrothermal synthesis of Mn-ferrite doped with V (V) ions. The range of the doping level was from 0.0 to x to 0.20. The fluctuation in tetrahedral and octahedral site occupancies with Fe (III), Mn (II), and V (V) ions was coupled to the variation in unit cell dimensions, saturation magnetization, and LPG sensing sensitivity. The total magnetic moment shows a slow decrease with V-doping up to x = 0.1 (Ms = 51.034 emu/g), t

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Yuan, Xiaoming, Dong Pan, Yijin Zhou, et al. "Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions." Applied Physics Reviews 8, no. 2 (2021): 021302. http://dx.doi.org/10.1063/5.0044706.

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Cui, Jie, Masashi Ozeki, and Masafumi Ohashi. "Dynamic behavior of group III and V organometallic sources and nanostructure fabrication by supersonic molecular beams." Journal of Crystal Growth 209, no. 2-3 (2000): 492–98. http://dx.doi.org/10.1016/s0022-0248(99)00604-1.

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12

Torres-Jaramillo, Santiago, Camilo Pulzara-Mora, Roberto Bernal-Correa, et al. "Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering." Universitas Scientiarum 24, no. 3 (2019): 523–42. http://dx.doi.org/10.11144/javeriana.sc24-3.saos.

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Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating layers of In and GaAs on a silicon substrate by magnetron sputtering. Furthermore, we characterized the produced nanostructures using secondary ion mass spectroscopy (SIMS), X-ray diffraction analysis, and Raman spectroscopy. SIMS revealed variation in the concentration of In atoms across In/GaAs/In interphases, and X-ray diffraction revealed planes

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13

Floris, Francesco, Lucia Fornasari, Vittorio Bellani, et al. "Strong Modulations of Optical Reflectance in Tapered Core–Shell Nanowires." Materials 12, no. 21 (2019): 3572. http://dx.doi.org/10.3390/ma12213572.

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Random assemblies of vertically aligned core–shell GaAs–AlGaAs nanowires displayed an optical response dominated by strong oscillations of the reflected light as a function of the incident angle. In particular, angle-resolved specular reflectance measurements showed the occurrence of periodic modulations in the polarization-resolved spectra of reflected light for a surprisingly wide range of incident angles. Numerical simulations allowed for identifying the geometrical features of the core–shell nanowires leading to the observed oscillatory effects in terms of core and shell thickness as well

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14

Wang, Lifeng, Juha Song, Christine Ortiz, and Mary C. Boyce. "Anisotropic design of a multilayered biological exoskeleton." Journal of Materials Research 24, no. 12 (2009): 3477–94. http://dx.doi.org/10.1557/jmr.2009.0443.

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Biological materials have developed hierarchical and heterogeneous material microstructures and nanostructures to provide protection against environmental threats that, in turn, provide bioinspired clues to improve human body armor. In this study, we present a multiscale experimental and computational approach to investigate the anisotropic design principles of a ganoid scale of an ancient fish, Polypterus senegalus, which possesses a unique quad-layered structure at the micrometer scale with nanostructured material constituting each layer. The anisotropy of the outermost prismatic ganoine lay

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15

AVİNÇ AKPINAR, İclal. "Effect of chemical oxidation process on adhesive performance in two component adhesive with nano particle and nano fiber additives." European Mechanical Science 8, no. 1 (2024): 29–37. http://dx.doi.org/10.26701/ems.1385552.

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In the present study, chemically surface-treated nanoparticles and nanofibers were added to the adhesive to improve the performance of the two-component structural adhesive. In the study, DP460 structural adhesive was used as adhesive, functionalized Multi Walled Carbon Nanotubes (MWCNT-COOH) with COOH and carbon fiber (CF) chemically surface treated with HNO3 solution were used as nanostructures. In the experimental study, eight different parameters were investigated as the nanostructure was (i) undoped, (ii) 1 wt% MWCNT-COOH added, (iii) 1wt%. untreated CF added, (iv) 0.5 wt% chemically trea

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Gupta, Kaushik, Tina Basu, and Uday Chand Ghosh. "Sorption Characteristics of Arsenic(V) for Removal from Water Using Agglomerated Nanostructure Iron(III)−Zirconium(IV) Bimetal Mixed Oxide." Journal of Chemical & Engineering Data 54, no. 8 (2009): 2222–28. http://dx.doi.org/10.1021/je900282m.

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Maliakkal, Carina B., Daniel Jacobsson, Marcus Tornberg, and Kimberly A. Dick. "Post-nucleation evolution of the liquid–solid interface in nanowire growth." Nanotechnology 33, no. 10 (2021): 105607. http://dx.doi.org/10.1088/1361-6528/ac3e8d.

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Abstract We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au–Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III–V and II–VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recor

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18

Kurowski, Ludovic, Dorothée Bernard, Eugène Constant, and Didier Decoster. "Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III–V nanostructure fabrication." Journal of Physics: Condensed Matter 16, no. 2 (2003): S127—S132. http://dx.doi.org/10.1088/0953-8984/16/2/015.

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Mukherjee, K., C. De Santi, S. You, et al. "Study and characterization of GaN MOS capacitors: Planar vs trench topographies." Applied Physics Letters 120, no. 14 (2022): 143501. http://dx.doi.org/10.1063/5.0087245.

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Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease in the breakdown performance compared to the planar structures. (iii) For tr

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20

Huang, Y. Q., V. Polojärvi, S. Hiura, et al. "(Invited) Quest for Fully Spin and Optically Polarized Semiconductor Nanostructures for Room-Temperature Opto-Spintronics." ECS Meeting Abstracts MA2023-02, no. 34 (2023): 1666. http://dx.doi.org/10.1149/ma2023-02341666mtgabs.

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Spintronics represents a new paradigm for future electronics, photonics and information technology, which explores the spin degree of freedom of the electron for information storage, processing and transfer. Since 1990s, we have witnessed great success of metal-based spintronics that has revolutionized the mass data storage industry. There has also been an enormous push for semiconductor spintronics during the past three decades, with the aim to capitalize the past and current success of charge-based semiconductor technology and to make its spin counterpart the backbone of future spintronics j

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21

Tan, Hoe. "(Invited) Shape Engineering of Nanostructured III-V Semiconductor Lasers." ECS Meeting Abstracts MA2024-01, no. 22 (2024): 1329. http://dx.doi.org/10.1149/ma2024-01221329mtgabs.

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Group III-V semiconductors have revolutionised electronics and optoelectronics due to their superior physical and optoelectronic properties including high carrier mobility, direct bandgap and band structure engineering capability. Reducing the device size to nanoscale brings many unique properties, such as large surface-area-to-volume ratio, high aspect ratio, carriers and photons confinement effect. These nanostructures have already been demonstrated for potential applications in light emitters, photodetectors, solar cells and for photoelectrochemical water splitting. However, to date most ef

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22

Dubrovskii V. G. and Leshchenko E. D. "Criterion for the growth selectivity of III-V and III-N nanowires on masked substrates." Technical Physics Letters 48, no. 11 (2022): 45. http://dx.doi.org/10.21883/tpl.2022.11.54889.19350.

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A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed Keywords: III-V nanowires, selective area epitaxy, masked substrate, nucleation.

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23

Дубровский, В. Г., та Е. Д. Лещенко. "Критерий селективного роста III-V и III-N нитевидных нанокристаллов на маскированных подложках". Письма в журнал технической физики 48, № 22 (2022): 7. http://dx.doi.org/10.21883/pjtf.2022.22.53798.19350.

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A model is developed for the initial stage of nucleation of III-V nanowires including nitrides (III-V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed

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24

Dubrovskii V. G. "Limiting factors for the growth rate of epitaxial III-V compound semiconductors." Technical Physics Letters 49, no. 4 (2023): 77. http://dx.doi.org/10.21883/tpl.2023.04.55886.19512.

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Limiting factors for the growth rate of epitaxial III-V compound semiconductors are investigated. A model based on the two connected diffusion equations for the group III and V adatoms applies for planar layers and different nanostructures including III-V nanowires. An expression for the step growth rate is obtained and a physical parameter is revealed which determines an element which actually limits the growth process. Keywords: III-V compound semiconductors, surface diffusion of adatoms, desorption, step growth rate.

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25

Reznik, R. R., K. P. Kotlyar, A. I. Khrebtov, and G. E. Cirlin. "Features of the MBE growth of nanowires with quantum dots on the silicon surface." Journal of Physics: Conference Series 2086, no. 1 (2021): 012032. http://dx.doi.org/10.1088/1742-6596/2086/1/012032.

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Abstract The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.

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Дубровский, В. Г. "Лимитирующие факторы скорости роста при эпитаксии полупроводниковых соединений III-V". Письма в журнал технической физики 49, № 8 (2023): 39. http://dx.doi.org/10.21883/pjtf.2023.08.55137.19512.

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Limiting factors for the growth rate of epitaxial III-V compound semiconductors are investigated. A model based on the two connected diffusion equations for the group III and V adatoms applies for planar layers and different nanostructures including III-V nanowires. An expression for the step growth rate is obtained and a physical parameter is revealed which determines an element which actually limits the growth process.

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Reznik, R. R., K. P. Kotlyar, V. O. Gridchin, et al. "III-V nanostructures with different dimensionality on silicon." Journal of Physics: Conference Series 2103, no. 1 (2021): 012121. http://dx.doi.org/10.1088/1742-6596/2103/1/012121.

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Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider

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Mynbaev, K. D., A. V. Shilyaev, A. A. Semakova, E. V. Bykhanova, and N. L. Bazhenov. "Luminescence of II–VI and III–V nanostructures." Opto-Electronics Review 25, no. 3 (2017): 209–14. http://dx.doi.org/10.1016/j.opelre.2017.06.005.

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Takei, Kuniharu, Rehan Kapadia, Yongjun Li, E. Plis, Sanjay Krishna, and Ali Javey. "Surface Charge Transfer Doping of III–V Nanostructures." Journal of Physical Chemistry C 117, no. 34 (2013): 17845–49. http://dx.doi.org/10.1021/jp406174r.

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Alonso-González, P., L. González, D. Fuster, J. Martín-Sánchez, and Yolanda González. "Surface Localization of Buried III–V Semiconductor Nanostructures." Nanoscale Research Letters 4, no. 8 (2009): 873–77. http://dx.doi.org/10.1007/s11671-009-9329-3.

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Coelho, J., G. Patriarche, F. Glas, G. Saint-Girons, and I. Sagnes. "Stress-driven self-ordering of III–V nanostructures." Journal of Crystal Growth 275, no. 1-2 (2005): e2245-e2249. http://dx.doi.org/10.1016/j.jcrysgro.2004.11.359.

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John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the e

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KOUJI, Kensuke, YouKey MATSUNAGA, and Kyozaburo TAKEDA. "Electronic and Molecular Structures of III-V Hetero-Nanostructures." Journal of Computer Chemistry, Japan 16, no. 5 (2017): 149–51. http://dx.doi.org/10.2477/jccj.2017-0060.

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Cipriano, Luis A., Giovanni Di Liberto, Sergio Tosoni, and Gianfranco Pacchioni. "Quantum confinement in group III–V semiconductor 2D nanostructures." Nanoscale 12, no. 33 (2020): 17494–501. http://dx.doi.org/10.1039/d0nr03577g.

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35

Reinhardt, F., B. Dwir, G. Biasiol, and E. Kapon. "Atomic force microscopy of III–V nanostructures in air." Applied Surface Science 104-105 (September 1996): 529–38. http://dx.doi.org/10.1016/s0169-4332(96)00198-5.

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Alvarado, S. F. "Luminescence in scanning tunneling microscopy on III–V nanostructures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 2 (1991): 409. http://dx.doi.org/10.1116/1.585582.

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MONAICO, Eduard V. "MICRO- AND NANO-ENGINEERING OF SEMICONDUCTOR COMPOUNDS AND METAL STRUCTURES BASED ON ELECTROCHEMICAL TECHNOLOGIES." Annals of the Academy of Romanian Scientists Series on Physics and Chemistry 9, no. 1 (2024): 85–107. http://dx.doi.org/10.56082/annalsarsciphyschem.2024.1.85.

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This paper aims to address the challenges of micro- and nano-engineering semiconductor compounds and fabricating metal-semiconductor nanocomposite materials by developing theoretical concepts for the application of electrochemical nanostructuring technologies to semiconductor substrates. It includes identifying the technological conditions for controlled electrochemical etching to create nanostructured semiconductor templates with wide bandgaps, such as III-V semiconductors (InP, GaAs, GaN) and II-VI compounds (CdSe, ZnSe, ZnxCd1-xS). The study also demonstrates the conditions for electrochemi

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Zhang, Leilei, Xing Li, Shaobo Cheng, and Chongxin Shan. "Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures." Materials 15, no. 5 (2022): 1917. http://dx.doi.org/10.3390/ma15051917.

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III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented t

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Vladimirova, E. V., O. I. Gyrdasova, and A. V. Dmitriev. "Synthesis of nanostructured hollow microspheres of vanadium (III, V) oxides." Nanosystems: Physics, Chemistry, Mathematics 11, no. 5 (2020): 572–77. http://dx.doi.org/10.17586/2220-8054-2020-11-5-572-577.

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Fleischer, K., G. Bussetti, C. Goletti, W. Richter, and P. Chiaradia. "Optical anisotropy of Cs nanostructures on III–V(110) surfaces." Journal of Physics: Condensed Matter 16, no. 39 (2004): S4353—S4365. http://dx.doi.org/10.1088/0953-8984/16/39/010.

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Jenichen, B. "X-ray investigations of III–V compounds: layers, nanostructures, surfaces." Materials Science and Engineering: B 80, no. 1-3 (2001): 81–86. http://dx.doi.org/10.1016/s0921-5107(00)00594-8.

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Patsha, Avinash, Kishore K. Madapu, and S. Dhara. "Raman Spectral Mapping of III–V Nitride and Graphene Nanostructures." MAPAN 28, no. 4 (2013): 279–83. http://dx.doi.org/10.1007/s12647-013-0082-9.

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Coelho, J., G. Patriarche, F. Glas, I. Sagnes, and G. Saint-Girons. "Stress-engineered orderings of self-assembled III-V semiconductor nanostructures." physica status solidi (c) 2, no. 4 (2005): 1245–50. http://dx.doi.org/10.1002/pssc.200460413.

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Tan, Chee Leong, and Hooman Mohseni. "Emerging technologies for high performance infrared detectors." Nanophotonics 7, no. 1 (2018): 169–97. http://dx.doi.org/10.1515/nanoph-2017-0061.

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AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the productio

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Reznik R. R., Gridchin V. O., Kotlyar K. P., et al. "Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy." Semiconductors 56, no. 7 (2022): 492. http://dx.doi.org/10.21883/sc.2022.07.54653.16.

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The results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InGaAs quantum dots are presented. It was shown that, as in the case of the InP/InAsP material system, the formation of predominantly two objects is observed in the body of AlGaAs nanowire: InGaAs quantum dot due to axial growth and InGaAs quantum well due to radial growth. It is important to note that the grown nanostructures were formed predominantly in the wurtzite crystallographic phase. The results of the grown nanostructures physical properties studies indicate that they are promising

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Ziembicki, Jakub, Paweł Scharoch, Maciej P. Polak, Michał Wiśniewski, and Robert Kudrawiec. "Band parameters of group III–V semiconductors in wurtzite structure." Journal of Applied Physics 132, no. 22 (2022): 225701. http://dx.doi.org/10.1063/5.0132109.

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The properties of most III–V semiconductor materials in the wurtzite structure are not known because of their metastable character. However, recent advances in the growth of III–V wurtzite nanorods open new perspectives for applications. In this work, we present a systematic computational study of bulk wurtzite III–V semiconductors, using predictive ab initio methods, to provide a necessary base knowledge for studying the nanostructures. The most important physical properties of bulk systems, i.e., lattice constants, elasticity, spontaneous polarization, piezoelectricity, band structures, defo

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Sanchez, A. M., A. M. Beltran, R. Beanland, et al. "Blocking of indium incorporation by antimony in III–V-Sb nanostructures." Nanotechnology 21, no. 14 (2010): 145606. http://dx.doi.org/10.1088/0957-4484/21/14/145606.

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Silveira, J. P., J. M. Garcia, and F. Briones. "Surface stress effects during MBE growth of III–V semiconductor nanostructures." Journal of Crystal Growth 227-228 (July 2001): 995–99. http://dx.doi.org/10.1016/s0022-0248(01)00966-6.

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Benyoucef, M., M. Usman, T. Alzoubi, and J. P. Reithmaier. "Pre-patterned silicon substrates for the growth of III-V nanostructures." physica status solidi (a) 209, no. 12 (2012): 2402–10. http://dx.doi.org/10.1002/pssa.201228367.

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Smirnov, Aliaksandr, Andrei Stsiapanau, Kirill Korsak, et al. "3‐2: Invited Paper: Monolithic integration of a superhigh resolution LED matrix with a Si addressing chip." SID Symposium Digest of Technical Papers 56, S1 (2025): 27–29. https://doi.org/10.1002/sdtp.18713.

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As for today high resolution micro LED/OLED displays are the key candidates for the next‐generation augmented reality (AR), virtual reality (VR), head‐up display (HUD) and wearable applications to provide better human‐digital interaction. However, there are some obstacles on this way. This study explores the monolithic integration of III‐V direct bandgap GaAsP or GaPN heterostructures, which emit light in the visible spectrum, with a silicon CMOS chip containing pixel's addressing circuitry. Despite challenges such as lattice mismatch and thermal expansion differences between III‐V materials a

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