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Articles de revues sur le sujet « Insulator-to-metal transition »

Auteur : Grafiati

Publié le 10 mars 2023

Mis à jour le 31 juillet 2025

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1

Lee, D., B. Chung, Y. Shi, et al. "Isostructural metal-insulator transition in VO2." Science 362, no. 6418 (2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.

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The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an inter

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2

Epstein, A. J., J. M. Ginder, F. Zuo, et al. "Insulator-to-metal transition in polyaniline." Synthetic Metals 18, no. 1-3 (1987): 303–9. http://dx.doi.org/10.1016/0379-6779(87)90896-4.

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3

Lavarda, F. C., M. C. dos Santos, D. S. Galvão, and B. Laks. "Insulator-to-metal transition in polythiophene." Physical Review B 49, no. 2 (1994): 979–83. http://dx.doi.org/10.1103/physrevb.49.979.

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4

Ginder, J. M., A. F. Richter, A. G. MacDiarmid, and A. J. Epstein. "Insulator-to-metal transition in polyaniline." Solid State Communications 63, no. 2 (1987): 97–101. http://dx.doi.org/10.1016/0038-1098(87)91173-2.

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5

Marçal, Nei, and Bernardo Laks. "Insulator-to-metal transition on polyselenophene." International Journal of Quantum Chemistry 95, no. 3 (2003): 230–36. http://dx.doi.org/10.1002/qua.10678.

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6

Liao, Zhaoliang, and Jiandi Zhang. "Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures." Applied Sciences 9, no. 1 (2019): 144. http://dx.doi.org/10.3390/app9010144.

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Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlate

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7

Farkašovský, Pavol. "The Behavior of the Spin-One-Half Falicov–Kimball Model Close to the Metal–Insulator Transition." International Journal of Modern Physics B 12, no. 26 (1998): 2709–16. http://dx.doi.org/10.1142/s0217979298001551.

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The spin-one-half Falicov–Kimball model for electronically driven valence and metal–insulator transitions is studied in one and two dimensions using small-cluster exact-diagonalization calculations. Performing an exhaustive study of the model close to the metal–insulator transition we have found that the spin-one-half Falicov–Kimball model can describe much of experimental data of transition-metal and rare-earth compounds. Particularly, except the discontinuous transitions it can provide the qualitative explanation for all typical behaviors of the electrical conductivity observed experimentall

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8

Pergament, A. L. "Metal-Insulator Transition Temperatures and Excitonic Phases in Vanadium Oxides." ISRN Condensed Matter Physics 2011 (November 17, 2011): 1–5. http://dx.doi.org/10.5402/2011/605913.

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The possibility of applying the excitonic insulator model to the description of metal-insulator transitions in vanadium oxide Magneli phases is investigated. Based on the Animalu transition metal model potential, the equation for the constant of Coulomb interaction in the theory of excitonic insulator is modified. It is shown that this theory allows the transition temperatures of all the oxides to be calculated. The conformity of the theory with the experimental data concerning the effective mass values for electrons in vanadium oxides is discussed.

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9

Ling, Yi. "Holographic lattices and metal–insulator transition." International Journal of Modern Physics A 30, no. 28n29 (2015): 1545013. http://dx.doi.org/10.1142/s0217751x1545013x.

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This paper is an extension of the talk given at the conference on Gravitation and Cosmology/The Fourth Galileo-Xu Guangqi Meeting. We intend to present a short review on recent progress on the construction of holographic lattices and its application to metal–insulator transition (MIT), which is a fundamentally important phenomenon in condensed matter physics. We will firstly implement the Peierls phase transition by constructing holographic charge density waves which are induced by the spontaneous breaking of translational symmetry. Then we turn to the holographic realization of metal–insulato

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10

CHEN, DONG-MENG, and LIANG-JIAN ZOU. "ORBITAL INSULATORS AND ORBITAL ORDER–DISORDER INDUCED METAL–INSULATOR TRANSITION IN TRANSITION-METAL OXIDES." International Journal of Modern Physics B 21, no. 05 (2007): 691–706. http://dx.doi.org/10.1142/s0217979207036618.

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The role of orbital ordering on metal–insulator transition in transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap of single-particle excitation spectra on the orbital order parameter is found. The thermal fluctuation drives the orbital order–disorder transition, diminishes the gap and leads to the metal–insulator transition. The unusual temperature dependence of the orbital polarization in the orbital insulator is also manifested in the resonant X-ray scattering intensity.

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11

Pergament, A. L., G. B. Stefanovich, N. A. Kuldin, and A. A. Velichko. "On the Problem of Metal-Insulator Transitions in Vanadium Oxides." ISRN Condensed Matter Physics 2013 (July 29, 2013): 1–6. http://dx.doi.org/10.1155/2013/960627.

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The problem of metal-insulator transition is considered. It is shown that the Mott criterion aB(nc)1/3≈0.25 is applicable not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as vanadium oxides (particularly, VO2 and V2O3). The low-temperature transition (“paramagnetic metal—antiferromagnetic insulator”) in vanadium sesquioxide is described on the basis of this concept in terms of an intervening phase, between metal and insulator states, with divergent dielectric constant and effective charge carrier mass. Recent communicati

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12

FABRIZIO, MICHELE, CLAUDIO CASTELLANI, and CARLO DI CASTRO. "ELECTRON-PHONON COUPLING CLOSE TO A METAL-INSULATOR TRANSITION IN ONE DIMENSION." International Journal of Modern Physics B 10, no. 12 (1996): 1439–51. http://dx.doi.org/10.1142/s0217979296000556.

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We consider a one-dimensional system of electrons interacting via a short-range repulsion and coupled to phonons close to the metal-insulator transition at half-filling. We argue that the metal-insulator transition can be described as a standard one-dimensional incommensurate to commensurate transition, even if the electronic system is coupled to the lattice distortion. By making use of known results for this transition, we prove that low-momentum phonons, with the inclusion of the 4kF (≃2π near half-filling) scattering, do not play any relevant role close to the metal-insulator transition, un

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13

Diamantini, M. C., and C. A. Trugenberger. "Bosonic topological insulators at the superconductor-to-superinsulator transition." Journal of Mathematical Physics 64, no. 2 (2023): 021101. http://dx.doi.org/10.1063/5.0135522.

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We review the topological gauge theory of the superconductor-to-superinsulator transition. The possible intermediate Bose metal phase intervening between these two states is a bosonic topological insulator. We point out that the correct treatment of a bosonic topological insulator requires a normally neglected, additional dimensionless parameter, which arises because of the non-commutativity between the infinite gap limit and phase space reduction. We show that the bosonic topological insulator is a functional first Landau level. The additional parameter drives two Berezinskii–Kosterlitz–Thoul

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14

Yamada, Atsushi. "A study of the magnetic properties in the Hubbard model on the honeycomb lattice by variational cluster approximation." International Journal of Modern Physics B 30, no. 23 (2016): 1650158. http://dx.doi.org/10.1142/s0217979216501587.

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Magnetic properties of the half-filled Hubbard model on the honeycomb lattice, which is a simple model of graphene, are studied using the variational cluster approximation (VCA). We found that the critical interaction strength of a magnetic transition is slightly lower than that of the nonmagnetic metal-to-insulator transition and the magnetic order parameter is already nonnegligible at the latter transition point. Thus, a semi-metallic state becomes a magnetic insulator as the interaction strength increases, and a spin liquid state characterized by a Mott insulator without spontaneously broke

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15

Ezawa, Motohiko. "Metal-Insulator Transition from Graphene to Graphane." Nanomaterials and Nanotechnology 3 (January 2013): 10. http://dx.doi.org/10.5772/56826.

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16

Itoh, Kiyoshi, Yuji Yano, and Nobuo Tsuda. "Metal to Insulator Transition for Ca1-xNaxPd3O4." Journal of the Physical Society of Japan 68, no. 9 (1999): 3022–26. http://dx.doi.org/10.1143/jpsj.68.3022.

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17

Hood, Randolph Q., and Giulia Galli. "Insulator to metal transition in fluid deuterium." Journal of Chemical Physics 120, no. 12 (2004): 5691–94. http://dx.doi.org/10.1063/1.1649734.

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18

Manimuthu, P., M. N. Jamal Ghousia Mariam, R. Murugaraj, and C. Venkateswaran. "Metal-like to insulator transition in Lu3Fe5O12." Physics Letters A 378, no. 20 (2014): 1402–6. http://dx.doi.org/10.1016/j.physleta.2014.03.018.

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19

Uriu, Ryouichi, Daisuke Shimada, and Nobuo Tsuda. "Metal to Insulator Transition in Pd1-xLixO." Journal of the Physical Society of Japan 60, no. 7 (1991): 2479–80. http://dx.doi.org/10.1143/jpsj.60.2479.

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20

Liang, Yongcheng, Ping Qin, Zhiyong Liang, Lizhen Zhang, Xun Yuan, and Yubo Zhang. "Identification of a monoclinic metallic state in VO2 from a modified first-principles approach." Modern Physics Letters B 33, no. 12 (2019): 1950148. http://dx.doi.org/10.1142/s0217984919501483.

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Metal-insulator transition (MIT) underlies many remarkable and technologically important phenomena in VO2. Even though its monoclinic structure had before been the reserve of the insulating state, recent experiments have observed an unexpected monoclinic metallic state. Here, we use a modified approach combining first-principles calculations with orbital-biased potentials to reproduce the correct stability ordering and electronic structures of different phases of VO2. We identify a ferromagnetic monoclinic metal that is likely to be the experimentally observed mysterious metastable state. Furt

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21

Li, Da, Qilang Wang, and Xiangfan Xu. "Thermal Conductivity of VO2 Nanowires at Metal-Insulator Transition Temperature." Nanomaterials 11, no. 9 (2021): 2428. http://dx.doi.org/10.3390/nano11092428.

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Vanadium dioxide (VO2) nanowires endowed with a dramatic metal−insulator transition have attracted enormous attention. Here, the thermal conductance of VO2 nanowires with different sizes, measured using the thermal bridge method, is reported. A size-dependent thermal conductivity was observed where the thicker nanowire showed a higher thermal conductivity. Meanwhile, the thermal conductivity jump at metal−insulator transition temperature was measured to be much higher in the thicker samples. The dominant heat carriers were phonons both at the metallic and the insulating regimes in the measured

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22

Moore, R. G., Jiandi Zhang, V. B. Nascimento, et al. "A Surface-Tailored, Purely Electronic, Mott Metal-to-Insulator Transition." Science 318, no. 5850 (2007): 615–19. http://dx.doi.org/10.1126/science.1145374.

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Mott transitions, which are metal-insulator transitions (MITs) driven by electron-electron interactions, are usually accompanied in bulk by structural phase transitions. In the layered perovskite Ca1.9Sr0.1RuO4, such a first-order Mott MIT occurs in the bulk at a temperature of 154 kelvin on cooling. In contrast, at the surface, an unusual inherent Mott MIT is observed at 130 kelvin, also on cooling but without a simultaneous lattice distortion. The broken translational symmetry at the surface causes a compressional stress that results in a 150% increase in the buckling of the Ca/Sr-O surface

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23

Chen, Da, Quan Ming Li, and Wang Gao. "Role of van der Waals forces in the metal–insulator transition of transition metal oxides." Physical Chemistry Chemical Physics 24, no. 9 (2022): 5455–61. http://dx.doi.org/10.1039/d2cp00282e.

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24

Quémerais, P., and S. Fratini. "Polaron Dissociation at the Insulator-to-Metal Transition." Modern Physics Letters B 11, no. 30 (1997): 1303–12. http://dx.doi.org/10.1142/s0217984997001559.

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Considering the long range Coulomb interactions between large polarons in dielectrics, we propose a model for their crystallization when no bipolarons are formed. As the density increases, the melting is examined at T=0 K. One possibility is the delocalization towards a liquid state of polarons. However, we show that this cannot happen if the electron-phonon coupling is larger than some critical value. The other competing mechanism is the dissociation of the polarons themselves, favored owing to their large mass at strong coupling. Finally, we propose a phase diagram for the insulator-to-metal

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25

Pan, Yong, Weiming Guan, and Pengyu Mao. "Insulator-to-metal transition of lithium–sulfur battery." RSC Advances 7, no. 70 (2017): 44326–32. http://dx.doi.org/10.1039/c7ra07621e.

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26

Cohen, Morrel H. "E.N. Economou and the metal-to-insulator transition." Physica B: Condensed Matter 296, no. 1-3 (2001): 7–20. http://dx.doi.org/10.1016/s0921-4526(00)00772-9.

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27

Ahmad, Naseem, Shakeel Khan, Mohd Mohsin Nizam Ansari, and Richa Bhargava. "Strange Metal to Insulator Transition in Nanocrystalline SnO2." Materials Today: Proceedings 21 (2020): 1735–40. http://dx.doi.org/10.1016/j.matpr.2020.01.225.

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28

Wessling, B., D. Srinivasan, G. Rangarajan, T. Mietzner, and W. Lennartz. "Dispersion-induced insulator-to-metal transition in polyaniline." European Physical Journal E 2, no. 3 (2000): 207–10. http://dx.doi.org/10.1007/pl00013668.

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29

Javadi, H. H. S., R. Laversanne, A. J. Epstein, R. K. Kohli, E. M. Scherr, and A. G. MacDiarmid. "ESR of protonated “emeraldine”: Insulator to metal transition." Synthetic Metals 29, no. 1 (1989): 439–44. http://dx.doi.org/10.1016/0379-6779(89)90330-5.

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30

Macovez, Roberto, Michael R. C. Hunt, Junjun Shan, et al. "Metal-to-insulator transition in thin-film polymericAC60." New Journal of Physics 11, no. 2 (2009): 023035. http://dx.doi.org/10.1088/1367-2630/11/2/023035.

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Pergament, Alexander. "Electrical breakdown as an insulator-to-metal transition." Phase Transitions 84, no. 2 (2011): 103–9. http://dx.doi.org/10.1080/01411594.2010.522496.

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32

Weidemann, Sebastian, Mark Kremer, Stefano Longhi, and Alexander Szameit. "Topological triple phase transition in non-Hermitian Floquet quasicrystals." Nature 601, no. 7893 (2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.

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AbstractPhase transitions connect different states of matter and are often concomitant with the spontaneous breaking of symmetries. An important category of phase transitions is mobility transitions, among which is the well known Anderson localization1, where increasing the randomness induces a metal–insulator transition. The introduction of topology in condensed-matter physics2–4 lead to the discovery of topological phase transitions and materials as topological insulators5. Phase transitions in the symmetry of non-Hermitian systems describe the transition to on-average conserved energy6 and

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33

Alzate Banguero, Melissa, Sayan Basak, Nicolas Raymond, et al. "Optical Mapping and On-Demand Selection of Local Hysteresis Properties in VO2." Condensed Matter 10, no. 1 (2025): 12. https://doi.org/10.3390/condmat10010012.

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Quantum materials have tremendous potential for disruptive applications. However, scaling devices down has been challenging due to electronic inhomogeneities in many of these materials. Understanding and controlling these electronic patterns on a local scale has thus become crucial to further new applications. To address this issue, we have developed a new optical microscopy method that allows for the precise quasi-continuous filming of the insulator-to-metal transition in VO2 with fine temperature steps. This enables us to track metal and insulator domains over thousands of images and quanti

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Bustarret, E., P. Achatz, B. Sacépé, et al. "Metal-to-insulator transition and superconductivity in boron-doped diamond." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (2007): 267–79. http://dx.doi.org/10.1098/rsta.2007.2151.

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The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II beh

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35

FARKAŠOVSKÝ, PAVOL, and HANA ČENČARIKOVÁ. "VALENCE AND METAL-INSULATOR TRANSITIONS IN THE SPINLESS FALICOV–KIMBALL MODEL INDUCED BY DOPING." International Journal of Modern Physics B 19, no. 23 (2005): 3603–12. http://dx.doi.org/10.1142/s0217979205032395.

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The influence of doping on valence and metal-insulator transitions in the spinless Falicov–Kimball model is studied by the well-controlled numerical method. Two types of doping are examined, and namely, the substitution of rare-earth ions by non-magnetic ions that introduce (i) one or (ii) no additional electron (per non-magnetic ion) into the conduction band. It is found that the first type of substitution increases the average f-state occupancy of rare-earth ions, whereas the second type of substitution has the opposite effect. In both cases valence changes are accompanied by a doping induce

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Huang, Jian, Loren Pfeiffer, and Ken West. "Metal-to-Insulator Transitions in Strongly Correlated Regime." Applied Sciences 9, no. 1 (2018): 80. http://dx.doi.org/10.3390/app9010080.

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Transport results from measuring ultra-clean two-dimensional systems, containing tunable carrier densities from 7 × 10 8 cm − 2 to ∼ 1 × 10 10 cm − 2 , reveal a strongly correlated liquid up to r s ≈ 40 where a Wigner crystallization is anticipated. A critical behavior is identified in the proximity of the metal-to-insulator transition. The nonlinear DC responses for r s > 40 captures hard pinning modes that likely undergo a first order transition into an intermediate phase in the course of melting.

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37

Dubovskii, L. B. "The surface tension at the metal-insulator phase transition in the magnetic field." Journal of Physics: Conference Series 2164, no. 1 (2022): 012070. http://dx.doi.org/10.1088/1742-6596/2164/1/012070.

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Abstract Any metal-insulator transition in a crystalline matter must be the transition from a situation in which the electronic bands overlap to that when they do not [1]. On the basis of the phenomenological theory [2], various singularities are considered in the magnetic field for the surface tension at the metal-insulator contact. The surface tension displays also the quantum magnetic oscillations at low temperatures [3]. The consideration is applied to the Mott insulator in the magnetic field.

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Polak, Paweł, Jan Jamroz, and Tomasz K. Pietrzak. "Observation of Metal–Insulator Transition (MIT) in Vanadium Oxides V2O3 and VO2 in XRD, DSC and DC Experiments." Crystals 13, no. 9 (2023): 1299. http://dx.doi.org/10.3390/cryst13091299.

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Due to metal–insulator transitions occurring in those compounds, materials and devices based on vanadium (III) and (IV) oxides draw increasing scientific attention. In this paper, we observed the transitions in both oxides using contemporary laboratory equipment. Changes in the crystallographic structure were precisely investigated as a function of the temperature with a step of 2 °C. Thermal effects during transitions were observed using differential scanning calorimetry. The DC conductivity of the materials was measured quasi-continuously as a function of the temperature. All the experiments

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ASOKAMANI, R., CH U. M. TRINADH, G. PARI, and S. NATARAJAN. "INSULATOR-TO-METAL TRANSITION IN LaRhO3 UNDER HIGH PRESSURE." Modern Physics Letters B 09, no. 11n12 (1995): 701–9. http://dx.doi.org/10.1142/s0217984995000644.

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The band structure calculations of perovskite transition metal compound LaRhO 3 performed using 'tight binding linear muffin tin orbital' (TB-LMTO) method within local density approximation (LDA) under ambient and high pressures are reported here. Our calculations are able to successfully explain the insulating nature of the system and the insulator-to-metal transition (IMT) is observed for the reduced volume of 0.90. The first electronic structure calculation reported here for LaRhO 3 enables us to compare it with that of LaCoO 3 which brings out the role played by the d bands. These studies

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40

Feng, Hai L., Chang-Jong Kang, Zheng Deng, et al. "Tl2Ir2O7: A Pauli Paramagnetic Metal, Proximal to a Metal Insulator Transition." Inorganic Chemistry 60, no. 7 (2021): 4424–33. http://dx.doi.org/10.1021/acs.inorgchem.0c03124.

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KOBAYASHI, K., T. OHTSUKI та K. SLEVIN. "CRITICAL EXPONENT FOR THE QUANTUM SPIN HALL TRANSITION IN ℤ2 NETWORK MODEL". International Journal of Modern Physics: Conference Series 11 (січень 2012): 114–19. http://dx.doi.org/10.1142/s2010194512005995.

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We have estimated the critical exponent describing the divergence of the localization length at the metal-quantum spin Hall insulator transition. The critical exponent for the metal-ordinary insulator transition in quantum spin Hall systems is known to be consistent with that of topologically trivial symplectic systems. However, the precise estimation of the critical exponent for the metal-quantum spin Hall insulator transition proved to be problematic because of the existence, in this case, of edge states in the localized phase. We have overcome this difficulty by analyzing the second smalles

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42

Ильинский, А. В., та Е. Б. Шадрин. "Корреляционная природа фазового перехода изолятор--металл в пленках V-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-". Физика твердого тела 62, № 8 (2020): 1284. http://dx.doi.org/10.21883/ftt.2020.08.49616.081.

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Abstract A complex character of the mechanism of thermal phase transformations from the insulating phase to the metallic phase has been revealed in thin V_2O_3 films. The insulator–metal phase transition in V_2O_3 is shown to consist of two stages: the hysteresis-less temperature-extended electron Mott transition extended in temperature and the stepwise structural Peierls transition with temperature hysteresis. The features of the insulator–metal phase transition revealed for V_2O_3 are discussed. These features are analyzed on the base of their comparison with characteristic features of analo

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Inozemtsev, M. M., V. A. Spivak, D. F. Yarchuk, O. G. Chepurin, R. A. Lukavenko та R. V. Vovk. "EFFECT OF PRESSURE ON THE METAL-INSULATOR TRANSITION IN YBa2Cu3O7-δ SINGLE CRYSTALS". Collection of Scientific Works of the Ukrainian State University of Railway Transport, № 207 (22 березня 2024): 119–23. http://dx.doi.org/10.18664/1994-7852.207.2024.313120.

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In present work we have investigated the effect of high hydrostatic pressure on conductivity in the ab-plane of the oxygen underdoped HTSC YbaCuO single crystals. It is shown, that the decreasing of oxygen concentration in sumples of YBa2Cu3O7-δ leads to enhancement of the localization and realization in the system of the metal – insulator transition, which always precedes the superconducting transition. Increasing the preassure leads to a significant shift of the metal – insulator transition to low temperatures.

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44

Esin, Iliya, Mark S. Rudner, and Netanel H. Lindner. "Floquet metal-to-insulator phase transitions in semiconductor nanowires." Science Advances 6, no. 35 (2020): eaay4922. http://dx.doi.org/10.1126/sciadv.aay4922.

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We study steady states of semiconductor nanowires subjected to strong resonant time-periodic drives. The steady states arise from the balance between electron-phonon scattering, electron-hole recombination via photoemission, and Auger scattering processes. We show that tuning the strength of the driving field drives a transition between an electron-hole metal (EHM) phase and a Floquet insulator (FI) phase. We study the critical point controlling this transition. The EHM-to-FI transition can be observed by monitoring the presence of peaks in the density-density response function, which are asso

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McGee, Ryan, Ankur Goswami, Rosmi Abraham, Syed Bukhari, and Thomas Thundat. "Phase transformation induced modulation of the resonance frequency of VO2/tio2 coated microcantilevers." MRS Advances 3, no. 6-7 (2018): 359–64. http://dx.doi.org/10.1557/adv.2018.140.

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AbstractHere we present an investigation into the phase change mechanism and detection methods of the metal-insulator transition of vanadium dioxide (VO2). We are able to detect the onset of the phase transition, and track it to completion using both the mechanical and electrical response by depositing VO2/TiO2 layers onto microcantilever devices by pulsed laser deposition. The resonance frequency of v-shaped cantilevers was shown to increase by up to 41 % upon deposition of VO2 as detected by laser Doppler vibrometry. Such a large increase in resonance frequency is ascribed to high tensile st

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Abrahams, Elihu. "Theoretical approaches to the metal‐insulator transition in 2D." Annalen der Physik 511, no. 7-9 (1999): 539–48. http://dx.doi.org/10.1002/andp.199951107-901.

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Hettiarachchi, Gayan Prasad, Takehito Nakano, Yusuke Masaki, Mohd Nazlan Mohd Muhid, Halimaton Hamdan, and Yasuo Nozue. "Insulator-to-Metal Transition in Potassium-Loaded Zeolite P." Journal of the Physical Society of Japan 84, no. 1 (2015): 014702. http://dx.doi.org/10.7566/jpsj.84.014702.

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Tsukazaki, A., A. Ohtomo, M. Nakano, and M. Kawasaki. "Photoinduced insulator-to-metal transition in ZnO∕Mg0.15Zn0.85O heterostructures." Applied Physics Letters 92, no. 5 (2008): 052105. http://dx.doi.org/10.1063/1.2841044.

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Kuzmin, Alexei, Andris Anspoks, Aleksandr Kalinko та ін. "Pressure-induced insulator-to-metal transition in α-SnWO4". Journal of Physics: Conference Series 712 (травень 2016): 012122. http://dx.doi.org/10.1088/1742-6596/712/1/012122.

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Miyano, K., T. Tanaka, Y. Tomioka, and Y. Tokura. "Photoinduced Insulator-to-Metal Transition in a Perovskite Manganite." Physical Review Letters 78, no. 22 (1997): 4257–60. http://dx.doi.org/10.1103/physrevlett.78.4257.

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