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Littérature scientifique sur le sujet « Metal-Assisted chemical etching of silicon »

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Publié le 1 mars 2025

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Articles de revues sur le sujet "Metal-Assisted chemical etching of silicon"

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Li, Yu Ping, Xiu Hua Chen, Wen Hui Ma, Shao Yuan Li, Ping Bi, Xue Mei Liu et Fu Wei Xiang. « Research on Preparation of Porous Silicon Powders from Metallurgical Silicon Material ». Materials Science Forum 847 (mars 2016) : 97–102. http://dx.doi.org/10.4028/www.scientific.net/msf.847.97.

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Stain etching, one step metal assisted chemical etching (1-MACE) and two-step metal assisted chemical etching (2-MACE) were used for preparing porous silicon powders (PSPs) based on metallurgical silicon powder. The influences of different oxidants species and concentrations on the structure of PSP were discussed. The results indicated that the different oxidant species has an important effect on the morphology and structure of PSP. In stain etching, there is still a challenge for fabricating PSP with uniform and controlled pore size structure. In contrast, metal-assisted chemical etching method is easier to prepare PSPs sample with uniform depth and pore size than stain etching, In 1-MACE, the growth rate of the PSPs pore was between 0.05 and 0.10 μm/min, which is far less than that of 2-MACE (about 0.2~0.5 μm/min). Furthermore, 2-MACE showed more advantages than stain etching and 1-MACE in controlling of pore size range and structure.
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Cao, Dao Tran, Cao Tuan Anh et Luong Truc Quynh Ngan. « Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching ». Journal of Nanoelectronics and Optoelectronics 15, no 1 (1 janvier 2020) : 127–35. http://dx.doi.org/10.1166/jno.2020.2684.

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Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.
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St John, Christopher, Christian L. Arrington, Jonathan Coleman, Mason Risley et David Bruce Burckel. « Metasurface Optic Features Using Metal-Assisted Chemical Etching (MACE) ». ECS Meeting Abstracts MA2024-02, no 16 (22 novembre 2024) : 1652. https://doi.org/10.1149/ma2024-02161652mtgabs.

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Metal-assisted chemical etching (MACE or MacEtch) is a versatile method for fabricating nano and micro-structured silicon (Si), which has garnered significant attention due to its potential applications in photovoltaics, sensors, and nanoelectronics. The process involves the oxidation of Si in the presence of a metal catalyst (typically noble metals like Au, Ag, or Pt) and a wet etch solution, usually comprising hydrofluoric acid (HF) and an oxidizing agent such as hydrogen peroxide (H2O2). Impressive work has already been completed in the two decades following the introduction of this method through the field of stain etching [1]. Researchers have reported anisotropic structures in silicon as high as 10,000:1 aspect ratio [2] and studied the impact of catalyst thickness [3], geometry [4], chemical ratios [5][6], and level of doping [7]. In this work, we systematically tune the selectivity of the MACE process based on the geometry of desired structures, chemical ratios of HF, H2O2 and ethanol, silicon doping types, and characteristics of the metal catalyst targeting our desired metasurface optic features. We use statistical analysis such as ensemble machine learning algorithms to create an informed understanding and importance matrix for each of these variables, toward the purpose of creating refractive optical features in silicon. The important parameters in the desired final product are vertical sidewalls, 10:1 aspect ratio, minimized surface roughness in the field, an optimized geometry, and a target depth. This comprehensive statistical analysis contributes to a deeper understanding of the MACE process, offering valuable guidelines for optimizing etching conditions to achieve desired micron to nanometer structures in silicon. The findings hold promise for advancing the fabrication of silicon-based nano-devices, paving the way for novel applications in various technological fields. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525 SAND2024-04791A [1] X. Li and P. W. Bohn, "Metal-assisted chemical etching in HF/H2O2 produces porous silicon," Applied Physics Letters, vol. 77, no. 16, pp. 2572-2574, 2000, doi: 10.1063/1.1319191. [2] L. Romano et al., "Metal assisted chemical etching of silicon in the gas phase: a nanofabrication platform for X-ray optics," Nanoscale Horizons, 10.1039/C9NH00709A vol. 5, no. 5, pp. 869-879, 2020, doi: 10.1039/C9NH00709A. [3] Z. Huang et al., "Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching," Nano Letters, vol. 8, no. 9, pp. 3046-3051, 2008/09/10 2008, doi: 10.1021/nl802324y. [4] P. Lianto, S.-Y. Yu, J. Wu, C. V. Thompson, and W. K. Choi, "Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon," Nanoscale, vol. 4 23, pp. 7532-9, 2012. [Online]. Available: https://doi.org/10.1039/C2NR32350H. [5] C. Chartier, S. Bastide, and C. Lévy-Clément, "Metal-assisted chemical etching of silicon in HF–H2O2," Electrochimica Acta, vol. 53, no. 17, pp. 5509-5516, 2008/07/01/ 2008, doi: https://doi.org/10.1016/j.electacta.2008.03.009. [6] W. Chern et al., "Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays," Nano Letters, vol. 10, no. 5, pp. 1582-1588, 2010/05/12 2010, doi: 10.1021/nl903841a. [7] R. A. Lai, T. M. Hymel, V. K. Narasimhan, and Y. Cui, "Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon," ACS Applied Materials & Interfaces, vol. 8, no. 14, pp. 8875-8879, 2016/04/13 2016, doi: 10.1021/acsami.6b01020. Figure 1
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Zhang, Lansheng, Xiaoyang Chu, Feng Tian, Yang Xu et Huan Hu. « Bio-Inspired Hierarchical Micro-/Nanostructures for Anti-Icing Solely Fabricated by Metal-Assisted Chemical Etching ». Micromachines 13, no 7 (7 juillet 2022) : 1077. http://dx.doi.org/10.3390/mi13071077.

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We report a cost-effective and scalable methodology for producing a hierarchical micro-/nanostructured silicon surface solely by metal-assisted chemical etching. It involves two major processing steps of fabricating micropillars and nanowires separately. The process of producing micro-scale structures by masked metal-assisted chemical etching was optimized. Silicon nanowires were created on the micropillar’s surface via maskless metal-assisted chemical etching. The hierarchical micro-/nanostructured surface exhibits superhydrophobic properties with a high contact angle of ~156° and a low sliding angle of <2.5° for deionized water. Furthermore, due to the existence of microscale and nanoscale air trapped at the liquid/solid interface, it exhibits a long ice delay time of 2876 s at −5 °C, more than 5 times longer than that of smooth surfaces. Compared to conventional dry etching methods, the metal-assisted chemical etching approach excludes vacuum environments and high-temperature processes and can be applied for applications requiring hierarchical micro-/nanostructured surfaces or structures.
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Choi, Keorock, Yunwon Song, Ilwhan Oh et Jungwoo Oh. « Catalyst feature independent metal-assisted chemical etching of silicon ». RSC Advances 5, no 93 (2015) : 76128–32. http://dx.doi.org/10.1039/c5ra15745e.

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Li, Liyi, Colin M. Holmes, Jinho Hah, Owen J. Hildreth et Ching P. Wong. « Uniform Metal-assisted Chemical Etching and the Stability of Catalysts ». MRS Proceedings 1801 (2015) : 1–8. http://dx.doi.org/10.1557/opl.2015.574.

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ABSTRACTRecently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 μm-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.
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Berezhanskyi, Ye I., S. I. Nichkalo, V. Yu Yerokhov et A. A. Druzhynin. « Nanotexturing of Silicon by Metal-Assisted Chemical Etching ». Фізика і хімія твердого тіла 16, no 1 (15 mars 2015) : 140–44. http://dx.doi.org/10.15330/pcss.16.1.140-144.

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This paper describes the method of metal assisted chemical etching (MacEtch) as an efficient approach for structuring the silicon surface with the ability to manage effectively the geometric parameters of the structures and their distribution on the surface of substrate. The surface texturing technology was presented and the structured silicon surfaces with regular and irregular types of surfaces have been obtained. This technology can be used for nanotexturing of the surface of silicon photovoltaic converters. The model of photovoltaic converter based on the crater-textured silicon surface with high efficiency was presented.
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Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu et Ya Hu. « Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells ». Journal of Physics : Conference Series 2076, no 1 (1 novembre 2021) : 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.

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Abstract Metal-assisted etching of silicon in HF aqueous solution has attracted widespread attention due to its potential applications in electronics, photonics, renewable energy, and biotechnology. In this paper, the basic process and mechanism of metal assisted electrochemical etching of silicon in vapor or liquid atmosphere based on galvanic cells are reviewed. This paper focuses on the use of gas-phase oxidants O2 and H2O2 instead of liquid phase oxidants Fe(NO3)3 and H2O2 to catalyze the etching of silicon in the vapor atmosphere of HF aqueous solution. The mechanism of substrate enhanced metal-assisted chemical etching for the preparation of large-area silicon micro nanostructure arrays is summarized, and the impact of substrate type and surface area on reactive etching is discussed.
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Lai, Chang Quan, Wen Zheng, W. K. Choi et Carl V. Thompson. « Metal assisted anodic etching of silicon ». Nanoscale 7, no 25 (2015) : 11123–34. http://dx.doi.org/10.1039/c5nr01916h.

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Metal assisted anodic etching (MAAE) of Si was studied to compare the effects of hole generation at Au/Si interfaces and electrolyte/Si interfaces, and investigate the effects that electronic and chemical processes have on the nanostructures formed.
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Iatsunskyi, Igor, Valentin Smyntyna, Nykolai Pavlenko et Olga Sviridova. « Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching ». ISRN Optics 2012 (1 novembre 2012) : 1–6. http://dx.doi.org/10.5402/2012/958412.

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Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.
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Thèses sur le sujet "Metal-Assisted chemical etching of silicon"

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MAGAGNA, STEFANO. « Thermoelectric nanostructured silicon obtained by Metal-assisted Chemical Etching ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/312087.

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Il mio progetto di tesi prevede la preparazione di materiali a base di nanofili di silicio, sfruttando una via sintetica in soluzione: il Metal-assisted Chemical Etching (MaCE). La tecnica prevede l’immersione del substrato monoscristallino <100> di Silicio in una soluzione di acido fluoridrico, contenente una sorgente di ioni Ag+ (AgNO3). Il processo consiste sostanzialmente nell’ossidazione localizzata del Silicio, catalizzata dagli ioni Ag+; l’ossido di Silicio così formato viene successivamente disciolto dal HF presente in soluzione, permettendo la formazione di nanofili per etching chimico. Nonostante il MaCE sia una tecnica diffusamente utilizzata a livello sperimentale, l’effettivo meccanismo del processo è ancora fortemente dibattuto in letteratura. Grazie al mio periodo a Marsiglia, ho potuto caratterizzare a fondo dal punto di vista morfologico i vari nanofili ottenuti da substrati a diverse concentrazioni di drogante, diverse specie droganti. E’ stata, inoltre, variata sistematicamente la temperatura di attacco, nonché la concentrazione di Ag+ all’interno della soluzione. I risultati ottenuti grazie ad una avanzata analisi morfologica con SEM (Scanning Electron Microscopy) e TEM (Transmission Electron Microscopy) hanno permesso di aprire una riflessione e avanzare teoria su diversi aspetti dell’etching, dal trasferimento elettronico alla localizzazione dell’attacco. La versatilità del MaCE permette la sintesi di un metamateriale, introdotto nel 2014 da Davis et al, costituito da una membrana di Silicio sulla quale è posto un array di nanofili di Silicio e definito “Nanophononic Metamaterial (NPM)”. L’interazione tra i modi fononici introdotti dai nanofili all’interno del film e i modi del film stesso porterebbe il NPM ad una conducibilità termica del 48%, rispetto a quella del corrispettivo film sottile senza nanopillars, grazie una ibridizzazione delle curve di dispersione fononica e la comparsa di modi fononici piatti e localmente risonanti. Inoltre, visto che il trasporto elettronico avviene nella membrana che rimane priva di difetti o inclusioni, le proprietà elettroniche del NPM risultano conservate, rendendolo ideale per applicazioni termoelettriche vista la bassa conducibilità termica risultante. NPM con diversi spessori di membrana sono stati prodotti partendo da un wafer Double-Side-Polished di 200 micron di spessore, sul quale sono stati prodotti i nanofili tramite MaCE, su entrambe le facce. Scegliendo la lunghezza dei nanofili è stato possibile regolare lo spessore della membrana residua. Le caratterizzazioni elettriche e termoelettriche hanno dimostrato come il comparto elettronico del NPM sia mantenuto. La caratterizzazione termica di una membrana con spessore di 62 micron ha ottenuto una conducibilità termica pari al 36% di quella del Silicio bulk. Questo materiale, quindi, permette di disaccoppiare la conducibilità elettrica (regolata dalle caratteristiche della membrana) dalla conducibilità termica (controllata dalla presenza dei nanofili), rendendolo ideale per applicazioni termoelettriche.
The necessity of sustainability in energy production and the continuous increasing of global warming, which leads to tremendous consequences, are among the most complicated challenges facedby humanity along its history. Reduction of the energy wastes anda strong energetic efficiency improvement are the most relevant solutions proposed, since nearly the 60 % of the energy generated around the world is wasted as heat. The possibility to recover even a small amount of this wasted energy could lead to a significant decrease of CO2 emission. Thermoelectric devices can actively contribute to this cause sincethey allow to generate electrical power even with small temperature gradients and without moving parts. Their efficiency is described by the figure of merit zT. Therefore, an ideal thermoelectric material should have, at the same time,good electrical properties combined to a low thermal conductivity ,a difficult challenge considering that, normally, a good electrical conductor is also a good thermal conductor. However, property modification at nanoscale opened a new pathway in thermoelectric materials research. The work of this PhD thesis is focused on the nanostructuration of a non-toxic, earth-abundant material such as Silicon. Due to the high thermal conductivity, bulk silicon is not suitable for thermoelectric application. Anyway, nanostructuration offers efficient and innovative ways to lower silicon thermal conductivity and to open novel opportunities to its usage as thermoelectric material. In the first part, the mechanism of Silver-assisted Chemical etching (SaCE), a one-step method chosen for the production of silicon NW will be presented. Particularly, the results of anextended analysis of the interplay among doping level and type of silicon, nanowire morphology and the parameters controlling thechemistry of SaCE will be shown. SaCE occurs at the outer substrate surface as a result of Si extrusion by sinking self-propelled Ag particles which causes Si flakes to be exposed at the outer solution-substrate. Here, the etching actually occurs through either 2- or 4-electron electrochemical oxidation of Si. NW surface is found to be either porous (potholed) or crystalline depending on the predominant electrochemical process. The prevalence of either 2- or4-electron processes is controlled by the material resistivity andtherefore by the voltage sensed by silicon. Two-electron processes occur at low voltages for conductive, heavily doped Si,and causes the formation of superficially potholed NWs. Four-electron processes occur for weakly doped Si and lead to fully crystalline NWs.Secondly, the production, by means of SaCE, and the characterization of a recently introduced category of material, the so-called Nanophononic Metamaterial (NPM), will be presented. This material is composed by an array of silicon nanopillars on top of a silicon thin film. The hybridization of the locally-resonant phonon modes introduced by the NWs with membrane phonon modes leads to a thermal conductivity reduction. NPM demonstrates to retain electrical and thermal conductivity of the wafer from which it is etched. Preliminary thermal measurements showed a thermal conductivity reduction of 2/3 with respect of bulk silicon. In the third part, the characterization of heavily doped Si NWs arrays, produced by SaCE, will be presented. This kind of arrays shows very low thermal conductivity (around 2 W/ (m K)) and a Seebeck coefficient comparable with that of heavily doped bulk silicon. Anyway, due to the presence of the substrate (very thick if compared with NWs length), it is complicated to have a precise measurement of NW resistivity. To overcome this issue, a new structure exclusively made of NWs and free from any substrate contribution will be presented.
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Magagna, Stefano. « Thermoelectric nanostructured silicon obtained by metal-assisted chemical etching ». Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0166.

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Mon projet de thèse implique la préparation de matériaux à base de nanofils de silicium, exploitant la solution de manière synthétique : gravure chimique assistée par métal (MaCE). J'ai pu pleinement caractériser depuis le point de vue morphologique des différents nanofils obtenus à partir de substrats à différentes concentrations de dopants, différentes espèces de dopants. La température d'attaque, ainsi que la concentration d'Ag + dans la solution. Les résultats autorisent à ouvrir une réflexion et une théorie avancée sur différents aspects de gravure, du transfert électronique de la localisation de l'attaque. MaCE permet la synthèse d'un métamatériau, introduit en 2014 par Davis et al, consistant à partir d'une membrane de silicium sur laquelle un réseau de nanofils de silicium et définition du "métamatériau nanophononique (NPM) ". NPM avec différentes épaisseurs de membrane ont été produites à partir d'une plaquette polie double face de 200 microns d'épaisseur, sur laquelle ils étaient produit les nanofils par MaCE, sur les deux faces. En choisissant la longueur des nanofils, il était possible d'ajuster l'épaisseur de la membrane résiduelle. Les caractérisations électriques et thermoélectriques ont montré comment le compartiment électronique du NPM est maintenu. La caractérisation thermique d'une membrane d'une épaisseur de 62 microns a obtenu une conductivité thermique égale à 36% de celui du silicium en vrac. Ce matériau nous permet donc de découpler la conductivité électrique (régulée par les caractéristiques de la membrane) de la conductivité thermique (contrôlée par la présence des nanofils), ce qui le rend idéal pour des applications thermoélectriques
My thesis project involves the preparation of materials based on silicon nanowires, synthetically exploiting solution: metal-assisted chemical etching (MaCE). I have been able to fully characterize sinc emorphological point of view the different nanowires obtained from substrates at different dopant concentrations, different dopant species. The temperature of attack, as well as the concentration of Ag + in the solution. The results allowed to open a reflection and an advanced theory on different aspects engraving, from electronic transfer to localization of the attack. MaCE allows the synthesis of ametamaterial, introduced in 2014 by Davis et al, consisting of from a silicon membrane on which a network of silicon nanowires and definition of "nanophononic metamaterial (NPM) ". NPM with different membrane thicknesses were produced from a 200 micron thick double-sided polished wafer, on which they were produced the nanowires by MaCE, on both sides. By choosing the length of the nanowires, it was possible to adjust the thickness of the residual membrane. Characterizations electric and thermoelectric have shown how the electronic compartment of the NPM is maintained. The thermal characterization of a membrane with a thickness of 62 micron has obtained a thermal conductivity equal to 36% of that of bulk silicon. This material therefore allows you to decouple the electrical conductivity (regulated bymembrane characteristics) thermal conductivity (controlled by the presence of nanowires), which makes it ideal for thermoelectric applications
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Ngqoloda, Siphelo. « Vertically aligned silicon nanowires synthesised by metal assisted chemical etching for photovoltaic applications ». University of the Western Cape, 2015. http://hdl.handle.net/11394/4872.

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>Magister Scientiae - MSc
One-dimensional silicon nanowires (SiNWs) are promising building blocks for solar cells as they provide a controlled, vectorial transport route for photo-generated charge carriers in the device as well as providing anti-reflection for incoming light. Two major approaches are followed to synthesise SiNWs, namely the bottom-up approach during vapour-liquid-solid mechanism which employs chemical vapour deposition techniques. The other method is the top-down approach via metal assisted chemical etching (MaCE). MaCE provides a simple, inexpensive and repeatable process that yields radially and vertically aligned SiNWs in which the structure is easily controlled by changing the etching time or chemical concentrations. During MaCE synthesis, a crystalline silicon (c-Si) substrate covered with metal nanoparticles (catalyst) is etched in a diluted hydrofluoric acid solution containing oxidising agents. Since the first report on SiNWs synthesised via MaCE, various publications have described the growth during the MaCE process. However lingering questions around the role of the catalyst during formation, dispersion and the eventual diameter of the nanowires remain. In addition, very little information pertaining to the changes in crystallinity and atomic bonding properties of the nanowires post synthesis is known. As such, this study investigates the evolution of vertical SiNWs from deposited silver nanoparticles by means of in-depth electron microscopy analyses. Changes in crystallinity during synthesis of the nanowires are probed using x-ray diffraction (XRD) and transmission electron microscopy (TEM). Deviations in the optical properties are quantified using optical reflectivity measurements by employing ultraviolet-visible (UV-Vis) spectroscopy, whereas the bonding configurations of the nanowires are probed by Raman and Fourier transforms infrared spectroscopy. Diameters of 50 – 200 nm vertical SiNWs were obtained from scanning electron micrographs and nanowires lengths linearly increased with etching time duration from about 130 nm after 30 seconds to over 15 μm after 80 minutes. No diameter modulations along nanowires axial direction and rough nanowires apexes were observed for nanowires obtained at longer etching times. These SiNWs remained crystalline as their bulk single crystalline Si wafers but had a thin amorphous layer on the surface, findings confirmed by TEM, XRD and Raman analysis. Nanowires were found to be partially passivated with oxygen with small traces of hydrogen termination, confirmed with infrared absorption studies. Finally, low optical reflection of less than 10% over visible range compared to an average of 30% for bulk Si were measured depicting an antireflective ability required in silicon solar cells.
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Hildreth, Owen James. « Development of metal-assisted chemical etching as a 3D nanofabrication platform ». Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/49011.

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The considerable interest in nanomaterials and nanotechnology over the last decade is attributed to Industry's desire for lower cost, more sophisticated devices and the opportunity that nanotechnology presents for scientists to explore the fundamental properties of nature at near atomic levels. In pursuit of these goals, researchers around the world have worked to both perfect existing technologies and also develop new nano-fabrication methods; however, no technique exists that is capable of producing complex, 2D and 3D nano-sized features of arbitrary shape, with smooth walls, and at low cost. This in part is due to two important limitations of current nanofabrication methods. First, 3D geometry is difficult if not impossible to fabricate, often requiring multiple lithography steps that are both expensive and do not scale well to industrial level fabrication requirements. Second, as feature sizes shrink into the nano-domain, it becomes increasingly difficult to accurately maintain those features over large depths and heights. The ability to produce these structures affordably and with high precision is critically important to a number of existing and emerging technologies such as metamaterials, nano-fluidics, nano-imprint lithography, and more. Summary To overcome these limitations, this study developed a novel and efficient method to etch complex 2D and 3D geometry in silicon with controllable sub-micron to nano-sized features with aspect ratios in excess of 500:1. This study utilized Metal-assisted Chemical Etching (MaCE) of silicon in conjunction with shape-controlled catalysts to fabricate structures such as 3D cycloids, spirals, sloping channels, and out-of-plane rotational structures. This study focused on taking MaCE from a method to fabricate small pores and silicon nanowires using metal catalyst nanoparticles and discontinuous thin films, to a powerful etching technology that utilizes shaped catalysts to fabricate complex, 3D geometry using a single lithography/etch cycle. The effect of catalyst geometry, etchant composition, and external pinning structures was examined to establish how etching path can be controlled through catalyst shape. The ability to control the rotation angle for out-of-plane rotational structures was established to show a linear dependence on catalyst arm length and an inverse relationship with arm width. A plastic deformation model of these structures established a minimum pressure gradient across the catalyst of 0.4 - 0.6 MPa. To establish the cause of catalyst motion in MaCE, the pressure gradient data was combined with force-displacement curves and results from specialized EBL patterns to show that DVLO encompassed forces are the most likely cause of catalyst motion. Lastly, MaCE fabricated templates were combined with electroless deposition of Pd to demonstrate the bottom-up filling of MaCE with sub-20 nm feature resolution. These structures were also used to establish the relationship between rotation angle of spiraling star-shaped catalysts and their center core diameter. Summary In summary, a new method to fabricate 3D nanostructures by top-down etching and bottom-up filling was established along with control over etching path, rotation angle, and etch depth. Out-of-plane rotational catalysts were designed and a new model for catalyst motion proposed. This research is expected to further the advancement of MaCE as platform for 3D nanofabrication with potential applications in thru-silicon-vias, photonics, nano-imprint lithography, and more.
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Khanyile, Sfiso Zwelisha. « Silicon nanowires by metal-assisted chemical etching and its incorporation into hybrid solar cells ». University of Western Cape, 2021. http://hdl.handle.net/11394/8340.

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Philosophiae Doctor - PhD
The rapid increase in global energy demand in recent decades coupled with the adverse environmental impact of conventional fuels has led to a high demand for alternative energy sources that are sustainable and efficient. Renewable solar energy technologies have received huge attention in recent decades with the aim of producing highly efficient, safe, flexible and robust solar cells to withstand harsh weather conditions. c-Si has been the material of choice in the development of conventional inorganic solar cells owing to it superior properties, abundance and higher efficiencies. However, the associated high costs of Si processing for solar cells have led to a gravitation towards alternative organic solar cells which are cheaper and easy to process even though they suffer from stability and durability challenges. In this work, combination of both inorganic and organic materials to form hybrid solar cells is one of the approaches adopted in order to address the challenges faced by solar cell development.
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Zheng, Wen Ph D. Massachusetts Institute of Technology. « Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching ». Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104114.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 170-177).
Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates. Use of high surface-to-volume ratio structures has been demonstrated as an effective way to increase the electrode area, and therefore to improve the capacitance density, while still keeping the footprint area low. The goal of this thesis was to first develop an understanding of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and efficient energy delivery. Two types of capacitors were investigated: electrostatic metal-oxide-semiconductor (MOS) capacitors for power management, and supercapacitors for energy storage purposes. For both types of devices, enlarged surface area per footprint was achieved by utilizing the arrays of silicon nanowires. Fundamental studies of the roles of metals in metal-assisted chemical etching (MACE) of silicon were conducted. Lithography techniques were used to generate patterns in metal films which when subjected to MACE resulted in formation of ordered arrays of silicon nanowires. Investigation of various metal catalysts showed that Pt is a more active catalyst than Au, while Cu is not stable in the etchant. Tapered silicon nanowires can be generated by adding a layer of Cu between two Au layers, and etching occurs much faster than when a pure Au catalyst is used. While carrying out research on the mechanisms of MACE, we developed a new electrochemical method for formation of arrays of silicon nanowires, metal-assisted anodic etching (MAAE). In this process, the etchant consists of HF alone, and does not include an oxidant. In both processes, HF is used as an etchant. However, in MACE, electronic holes are supplied through reduction of an oxidant (e.g. H₂O₂), while in MAAE, electronic holes are supplied through an external circuit, with anodic contact to either the metal or the silicon. In both contact cases for MAAE, the metal catalyzes the etching process and leads to controlled formation of silicon nanowires, without the need for an oxidant. This discovery, and its analysis, provided new insights into the mechanisms of both MAAE and MACE, and also opened the possibility for use of metal catalyzed electrochemical etching of other materials that cannot survive the HF/oxidant mixture. Processes for fabrication of on-chip capacitors based on silicon nanowires were next developed. We first fabricated on-chip MOS capacitors with nanowire arrays etched using MACE with both single crystal silicon substrates and polycrystalline silicon films. For wires made in both cases, the capacitance density followed a same scaling trend related to their geometries. Epitaxial wafers were used with a post-etch doping process to reduce the series resistance in the devices in order to obtain a better frequency response, as desired for high frequency circuits. To achieve higher capacitance densities for energy storage purposes, we also designed a solid state supercapacitor device based on nanowires etched using MAAE with heavily doped n-type silicon substrates. The silicon nanowires were coated with RuO₂ using atomic layer deposition (ALD) to achieve a high capacitance. In this case, charge is stored through the formation of an electrical double layer and through reversible redox reactions. We showed that the capacitance density of these devices roughly scaled with the increased surface area of silicon nanowire arrays. The solid state supercapacitor achieved a capacitance density of 6.5mF/cm², which is comparable to the best results achieved with other types of on-chip supercapacitors. In contrast with other processes for forming on-chip supercapacitors, the supercapacitors we demonstrated were fabricated using a fully complementary metal-oxide-semiconductor (CMOS) technology compatible process. Moreover, the Si nanowire-based device achieved this high capacitance density without sacrificing power performance compared to the planar device.
by Wen Zheng.
Ph. D.
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Xu, Ying. « Fabrication and Characterization of Photodiodes for Silicon Nanowire Applications and Backside Illumination ». University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1446313926.

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Мадан, Роман Григорович. « Фотоперетворювачі на основі наноструктурованого кремнію ». Bachelor's thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/28855.

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Робота складається з 55 сторінок, 4 розділів та містить 35 ілюстрацій, 24 таблиці та 19 джерел в переліку посилань. Актуальність теми – інтерес до створення гібридних органічних та неорганічних фотоперетворювачів, що мають більш низьку вартість, ніж традиційні. Метою роботи є дослідження вольт-амперних характеристик фотоперетворювачів. Порівняння характеристик пористого кремнію, отриманого за різного часу травлення. Об’єкт дослідження – фотоперетворювачі на основі наноструктурованого кремнію. Предмет дослідження – методи одержання та морфологія наноструктурованого шару оксиду індію й олова, а також плівки меланіну.
The work consists of 55 pages, 4 sections and contains 35 illustrations, 24 tables and 19 sources in the list of references. The actuality of the topic is the interest in the creation of hybrid organic and inorganic photoconductors that have a lower cost than traditional ones. The purpose of the work is to study the volt-ampere characteristics of nanostructured silicon solar cells. Comparison of the characteristics of porous silicon obtained at different times of etching. The object of research is nanostructured silicon solar cells. Subject of research - methods of obtaining and morphology of nanostructured layer of indium and tin oxide, as well as melanine films.
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Togonal, Alienor. « Silicon Nanowires for Photovoltaics : from the Material to the Device ». Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX032/document.

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Les cellules solaires à base de nanofils de silicium offrent une alternative intéressante pour la réalisation de panneaux photovoltaïques à haut rendement et à faible coût. Elles bénéficient notamment des excellentes propriétés optiques des nanofils qui forment une surface à très faible réflectivité tout en piégeant efficacement la lumière. Dans cette thèse, nous utilisons et améliorons une méthode de gravure chimique peu coûteuse et industrialisable pour la fabrication de forêts de nanofils de silicium. En adaptant la mouillabilité du substrat et des nanofils, nous avons remédié au problème d'agglomération inhérent à cette méthode lorsqu’on veut obtenir des forêts denses et désordonnées de nanofils. En combinant cette méthode de gravure chimique à la lithographie assistée par nanosphères, nous avons pu fabriquer des réseaux ordonnés de nanofils avec un contrôle précis des propriétés géométriques (diametre des nanofils et distance entre eux). Les propriétés optiques de ces réseaux ont été étudiées théoriquement et expérimentalement afin d'identifier les configurations optimales. Nous avons ensuite fabriqué des cellules solaires à partir de ces différents types de nanofils et deux types de structures. Le premier type, des cellules solaires HIT (Hétérojonction avec couche mince Intrinsèque) à base de nanofils de silicium, a été fabriqué par RF-PECVD. L'optimisation des conditions de dépôt plasma nous a permis d'obtenir des cellules solaires hautement performantes: rendements de 12,9% et facteurs de forme au-delà de 80%. Le second type, des cellules solaires hybrides, est basé sur la combinaison d'une couche organique et des nanofils de silicium. La caractérisation des cellules fabriquées montre des rendements prometteurs. Enfin, nous présentons des résultats préliminaires pour transférer ces concepts à une technologie couches minces
Silicon Nanowire (SiNW) based solar cells offer an interesting choice towards low-cost and highly efficient solar cells. Indeed solar cells based on SiNWs benefit from their outstanding optical properties such as extreme light trapping and very low reflectance. In this research project, we have fabricated disordered SiNWs using a low-cost top-down approach named the Metal-Assisted-Chemical-Etching process (MACE). The MACE process was first optimized to reduce the strong agglomeration observed at the top-end of the SiNWs by tuning the wettability properties of both the initial substrate and the SiNWs surface. By combining the MACE process with the nanosphere lithography, we have also produced ordered SiNW arrays with an accurate control over the pitch, diameter and length. The optical properties of these SiNW arrays were then investigated both theoretically and experimentally in order to identify the geometrical configuration giving the best optical performance. Disordered and ordered SiNW arrays have been integrated into two types of solar cells: heterojunction with intrinsic thin layer (HIT) and hybrid devices. SiNW based HIT devices were fabricated by RF-PECVD and the optimization of the process conditions has allowed us to reach efficiency as high as 12.9% with excellent fill factor above 80%. Hybrid solar cells based on the combination of SiNWs with an organic layer have also been studied and characterized. The possible transfer of this concept to the thin film technology is finally explored
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Мадан, Роман Григорович. « Органо-неорганічні гібриди на основі меланіну ». Master's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/38762.

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Актуальність теми – інтерес до створення гібридних органічних та неорганічних тонкоплівкових сонячних елементів, що мають більш низьку вартість, ніж традиційні сонячні елементи. Метою роботи є визначення оптимальних технологічних умов створення органічно-неорганічних структур для фотовольтаїчного застосування. Предмет дослідження – органо-неорганічні структури на основі кремнію та меланіну.
The relevance of the topic is the interest in creating hybrid organic and inorganic thin-film solar cells, which have a lower cost than traditional solar cells. The aim of the work is to determine the optimal technological conditions for the creation of organic-inorganic structures for photovoltaic applications. The subject of research - organo-inorganic structures based on silicon and melanin.
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Livres sur le sujet "Metal-Assisted chemical etching of silicon"

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Micro- and Nano-Fabrication by Metal Assisted Chemical Etching. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-03943-846-4.

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Micro- and Nano-Fabrication by Metal Assisted Chemical Etching. Mdpi AG, 2021.

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Micromachining using electrochemical discharge phenomenon : Fundamentals and application of spark assisted chemical engraving. Norwich, NY, USA : W. Andrew, 2009.

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Chapitres de livres sur le sujet "Metal-Assisted chemical etching of silicon"

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Lee, Seyeong, Dong-Hee Kang, Seong-Min Kim et Myung-Han Yoon. « Vertical silicon nanostructures via metal-assisted chemical etching ». Dans Silicon Nanomaterials Sourcebook, 169–92. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series : Series in materials science and engineering : CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-8.

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Toan, Nguyen Van, et Takahito Ono. « Capacitive Silicon Resonators with Narrow Gaps Formed by Metal-Assisted Chemical Etching ». Dans Capacitive Silicon Resonators, 82–98. Boca Raton, FL : CRC Press/Taylor & Francis Group, [2020] : CRC Press, 2019. http://dx.doi.org/10.1201/9780429266010-7.

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Ivanov, B., D. Philipov, V. Shanov et G. Peev. « Laser Induced Chemical Etching of Silicon with SF6 Using a Copper Bromide Vapour Laser ». Dans Pulsed Metal Vapour Lasers, 383–88. Dordrecht : Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_41.

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Sharma, Virender, Abhishek Verma, Vinod Kumar Jain et Daisy Verma. « Antireflection Properties of Multi-crystalline Black Silicon with Acid Textured Surfaces Using Two Step Metal Assisted Chemical Etching ». Dans Springer Proceedings in Physics, 23–28. Cham : Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_3.

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Hadjersi, T., N. Gabouze, A. Ababou, M. Boumaour, W. Chergui, H. Cheraga, S. Belhouse et A. Djeghri. « Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon ». Dans Materials Science Forum, 139–44. Stafa : Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-962-8.139.

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Lévy-Clément, Claude. « Porous Silicon Formation by Metal Nanoparticle-Assisted Etching ». Dans Handbook of Porous Silicon, 1–16. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04508-5_5-1.

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Lévy-Clément, Claude. « Porous Silicon Formation by Metal Nanoparticle-Assisted Etching ». Dans Handbook of Porous Silicon, 49–66. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05744-6_5.

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Lévy-Clément, Claude. « Porous Silicon Formation by Metal Nanoparticle-Assisted Etching ». Dans Handbook of Porous Silicon, 61–78. Cham : Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_5.

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Hildreth, Owen, et C. P. Wong. « Nano-metal-Assisted Chemical Etching for Fabricating Semiconductor and Optoelectronic Devices ». Dans Materials for Advanced Packaging, 879–922. Cham : Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45098-8_21.

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Irreraa, Alessia, Giorgia Franzòb, Barbara Fazioa, Simona Boninellib, Paolo Musumecic, Francesco Priolob, c, d et Fabio Iaconab. « Chapter 6 Room Temperature Light Emission from Silicon Nanowires Fabricated by a Metal-Assisted Wet Etching Process ». Dans Silicon Nanophotonics : Basic Principles, Present Status, and Perspectives, 2nd Ed, 161–90. Penthouse Level, Suntec Tower 3, 8 Temasek Boulevard, Singapore 038988 : Pan Stanford Publishing Pte. Ltd., 2016. http://dx.doi.org/10.1201/9781315364797-7.

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Actes de conférences sur le sujet "Metal-Assisted chemical etching of silicon"

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Cho, Hyein, Yebin Ahn, Sang Beom Hong, Soohyeok Park, Yejin Han, Geonhwi Kim, Eunjeong Song et al. « Advanced Metal-Assisted Chemical Etching Using HF Vapor and Ozone for MEMS Process ». Dans 2024 IEEE International Electron Devices Meeting (IEDM), 1–4. IEEE, 2024. https://doi.org/10.1109/iedm50854.2024.10873380.

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Xu, Hongbo, Jianqiang Wang, Hongyun Zhao et Mingyu Li. « Silicon Vias Fabricatied by Metal-Assisted Chemical Etching ». Dans 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202901.

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Koval, Viktoriia, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada et Dmytro Kulish. « Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application ». Dans 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783506.

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Toan, N. V., M. Toda et T. Ono. « High aspect silicon structures using metal assisted chemical etching ». Dans 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2016. http://dx.doi.org/10.1109/nano.2016.7751348.

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Xu, Ying, Chuan Ni et Andrew Sarangan. « Silicon nanowire photodetectors made by metal-assisted chemical etching ». Dans SPIE Nanoscience + Engineering, sous la direction de Eva M. Campo, Elizabeth A. Dobisz et Louay A. Eldada. SPIE, 2016. http://dx.doi.org/10.1117/12.2238480.

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Jana, S., et S. R. Bhattacharyya. « Metal assisted chemical etching for light emitting silicon nanowires ». Dans PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE : RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810212.

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Song-Ting Yang, Chien-Ting Liu, Subramani Thiyagu, Chen-Chih Hsueh et Ching-Fuh Lin. « Fabrication of Silicon thin film by metal-assisted chemical etching ». Dans 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2014. http://dx.doi.org/10.1109/nano.2014.6967974.

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Li, Xiaopeng, Alexander Sprafke, Stefan Schweizer et Ralf B. Wehrspohn. « Purifying metallurgical silicon to solar grade silicon by metal-assisted chemical etching ». Dans Freeform Optics. Washington, D.C. : OSA, 2013. http://dx.doi.org/10.1364/freeform.2013.jm3a.8.

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Iatsunskyi, Igor, Stefan Jurga, Valentyn Smyntyna, Mykolai Pavlenko, Valeriy Myndrul et Anastasia Zaleska. « Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching ». Dans SPIE Photonics Europe, sous la direction de Christophe Gorecki, Anand K. Asundi et Wolfgang Osten. SPIE, 2014. http://dx.doi.org/10.1117/12.2051489.

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Smyntyna, V. A., I. R. Iatsunskyi, O. V. Sviridova et N. N. Pavlenko. « Photoluminescence Properties of Nanostructured Silicon Fabricated by Metal-assisted Chemical Etching ». Dans Frontiers in Optics. Washington, D.C. : OSA, 2012. http://dx.doi.org/10.1364/fio.2012.ftu1a.6.

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Rapports d'organisations sur le sujet "Metal-Assisted chemical etching of silicon"

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Ervin, Matthew H., et Brian Isaacson. Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon. Fort Belvoir, VA : Defense Technical Information Center, novembre 2015. http://dx.doi.org/10.21236/ada623559.

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