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Thèses sur le sujet « Metal oxide semiconductors »

Auteur : Grafiati

Publié le 4 juin 2021

Mis à jour le 30 juillet 2024

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1

Peleckis, Germanas. « Studies on diluted oxide magnetic semiconductors for spin electronic applications ». Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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2

Wu, Kehuey. « Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET / ». [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

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3

Al-Ahmadi, Ahmad Aziz. « Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture / ». Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

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4

Liu, Kou-chen. « Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication / ». Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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5

Höhr, Timm. « Quantum-mechanical modeling of transport parameters for MOS devices / ». Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.

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Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.
Summary in German and English, text in English. Includes bibliographical references (p. 123-132).

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6

Gurcan, Zeki B. « 0.18 [mu]m high performance CMOS process optimization for manufacturability / ». Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

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7

Wu, Ting. « Design of terabits/s CMOS crossbar switch chip / ». View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.

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8

Wu, Xu Sheng. « Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling / ». View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.

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9

Modzelewski, Kenneth Paul. « DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University / ». Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

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10

Trivedi, Vishal P. « Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies ». [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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11

Khan, Shamsul Arefin. « Deep sub-micron MOS transistor design and manufacturing sensitivity analysis / ». Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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12

Huang, Amy. « On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS / ». Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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13

Yoon, Kwang Sub. « A precision analog small-signal model for submicron MOSFET devices ». Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.

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14

Shelley, Valerie Anderson 1957. « Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS ». Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276801.

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The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model closely estimates Emax is found. Variation in Emax with change of junction depth Xj is investigated. The electric field, Ex, as it varies with depth in the channel is investigated, and compared to the Jain and Balk approximation. The deviations suggest that the model must break down for short channels.

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15

Pesci, Federico M. « Metal oxide semiconductors employed as photocatalysts during water splitting ». Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.

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Photocatalytic water splitting has attracted significant interest in recent decades as it offers a clean and environmentally friendly route for the production of hydrogen. A key challenge remains the development of systems that employ abundant, non-toxic and inexpensive materials to dissociate water efficiently using sunlight. Titanium dioxide (TiO2), tungsten trioxide (WO3) and hematite (α-Fe2O3) are among the most studied photoanodes employed during water splitting because of the position of their valence band which is suitable for oxidising water to oxygen, and their low costs. However reported efficiencies for these materials are below the reported theoretical maximum values. A good understanding of the factors that are limiting the efficiency of these photoanodes is therefore desirable if improvements in the photocatalytic activity are to be achieved. This thesis is divided in four main sections. Chapters 3 and 4 describe transient absorption spectroscopy (TAS) studies in the microsecond-second timescales carried out on WO3 photoelectrodes and TiO2 nanowires respectively. TAS has been employed to follow the charge carriers dynamics in WO3 highlighting the presence of relatively long-lived holes (30 ms), which have been described as a requirement for the water oxidation reaction to take place. The electrons also appear to be long-lived (0.1 s), and this has been proposed to be due to slow electron transport through the film. TAS measurements have also been carried out on oxygen-deficient hydrogen-treated TiO2 nanowires, highlighting a more efficient suppression of the electron/hole recombination process in comparison with conventional anatase TiO2 photoanodes. Chapter 5 describes TAS and sum frequency generation (SFG) studies on TiO2 films which are designed to investigate the surface mechanisms of water oxidation. The dependence of the hole lifetime on the pH of the electrolytes employed has been examined by TAS and substantially faster decay rates have been found in highly alkaline solutions suggesting a change in the mechanism of water oxidation. Consequently, SFG has been employed in order to detect any possible intermediate at the interface TiO2/water. Initial measurements have provided the evidence of physisorbed and chemisorbed methanol (model probe) on the TiO2 surface and further studies at the TiO2/water interface have been carried out. Chapter 6 describes the development of a hybrid solar fuel reactor coupling a α-Fe2O3 based photoelecrochemical cell with luminescent solar concentrator plates. Initial tests have been carried out on a proof of principle prototype providing encouraging results.

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16

Waghe, Anil Bhalchandra. « Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors ». Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/WagheAB2003.pdf.

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17

Özdağ, Pınar Güneş Mehmet. « Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/ ». [s.l.] : [s.n.], 2005. http://library.iyte.edu.tr/tezler/master/fizik/T000397.pdf.

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Thesis (Master)--İzmir Institute of Technology, İzmir, 2005
Keywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)

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18

Randell, Heather Eve. « Applications of stress from boron doping and other challenges in silicon technology ». [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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19

Chan, Wan Tim. « CMOS-compatible zero-mask one time programmable (OTP) memory design / ». View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.

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20

Duffy, Christopher James. « Modeling hot-electron injection and impact ionization in pFET's ». Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/14796.

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21

Wang, Haihong. « Advanced transport models development for deep submicron low power CMOS device design / ». Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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22

PUZZOVIO, Delia. « Surface interaction mechanisms in metal-oxide semiconductors for alkane detection ». Doctoral thesis, Università degli studi di Ferrara, 2009. http://hdl.handle.net/11392/2389140.

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Gas sensors based on semiconductive materials have gained an increasing interest, thanks to their advantageous characteristics. However, their intrinsic lack of selectivity made research in this eld to come to a standstill. Such devices are mainly applied to environmental and indoor monitoring. A clearer analysis of surface reaction phenomena is the key to nd a solution to the problem of limited selectivity. This approach has been applied to gases of great interest, such as alkanes. The main aim of this dissertation is to clarify some theoretical and experimental aspects related to the sensing processes of metal-oxide semiconductors. Temperature programmed desorption techniques were chosen to investigate thermodynamic properties of nanostructured powders. Readsorption occurred for almost all the states observed, representing an advantage for sensing mechanism. Conduction measurements performed on thick film sensors resulted in positive responses under dry and wet conditions and in presence of ethanol. Concrete indications about the building of a reliable and efficient device were suggested.

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23

Bowen, Andrew. « Anodisation and study of oxide films formed on zirconium ». Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328407.

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24

Yellai, Kashyap Williams John R. « Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique ». Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/YELLAI_KASHYAP_13.pdf.

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25

Shum, Roger Chi Fai Carleton University Dissertation Engineering Electrical. « A timing macro model for performance optimization of CMOS logic circuits ». Ottawa, 1992.

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26

Hildreth, Scott A. « Statistical SPICE parameter extraction for an N-Well CMOS process / ». Online version of thesis, 1995. http://hdl.handle.net/1850/12177.

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27

Csutak, Sebastian Marius. « Optical receivers and photodetectors in 130nm CMOS technology ». Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3036588.

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28

Vega, Reinaldo A. « Schottky field effect transistors and Schottky CMOS circuitry / ». Online version of thesis, 2006. http://hdl.handle.net/1850/5179.

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29

Bialuschewski, Danny [Verfasser]. « Laser-assisted Modification of Metals and Metal Oxide Semiconductors as Photoactive Materials / Danny Bialuschewski ». München : Verlag Dr. Hut, 2020. http://d-nb.info/1219477699/34.

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30

Ali, Danish. « Coulomb blockade in silicon-on-insulator ». Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321368.

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31

Carruthers, Colin. « Low noise operation in deep depletion mode MOS transistors ». Thesis, University of Edinburgh, 1989. http://hdl.handle.net/1842/10866.

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32

Price, David T. « N-Well CMOS process integration / ». Online version of thesis, 1992. http://hdl.handle.net/1850/11261.

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33

John, Soji. « UHVCVD growth of Si₁-x-yGexCy epitaxial materials and application in heterostructure MOS devices / ». Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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34

Upadhyaya, Parag. « High IIP2 CMOS doubly balanced quadrature sub-harmonic mixer for 5 GHz direct conversion receiver ». Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Spring2005/p%5Fupadhyaya%5F050505.pdf.

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35

Zeng, Xu, et 曾旭. « Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235475.

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36

Zeng, Xu. « Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics / ». Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1966980X.

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37

Turner, Gary Chandler. « Zinc Oxide MESFET Transistors ». Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semiconductor devices require the material to be selectively doped with specific impurities that can make the material into one of two electronically distinct types – p- or n-type. Unfortunately, making reliable p-type ZnO has been elusive to date, despite considerable efforts worldwide. This lack of p-type material has hindered development of transistors based on this material. One alternative is a Schottky junction, which can be used as the active element in a type of transistor known as a metal-semiconductor field effect transistor, MESFET. Schottky junctions are traditionally made from noble metal layers deposited onto semiconductors. Recent work at the Canterbury University has shown that partially oxidised metals may in fact be a better choice, at least to zinc oxide. This thesis describes the development of a fabrication process for metal-semiconductor field effect transistors using a silver oxide gate on epitaxially grown zinc oxide single crystals. Devices were successfully produced and electrically characterised. The measurements show that the technology has significant potential.

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38

Du, Xiaohua. « Understanding and optimization of gas sensors based on metal oxide semiconductors ». Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3284441.

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39

Beglitis, N. « First-principles studies of surface defects of model metal-oxide semiconductors ». Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1324515/.

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In this thesis, three different model metal-oxide semiconductor systems will be discussed. First, the impact of hydroxyl vacancies, OHvac, on the geometry, electronic structure, and mechanical properties of single-walled aluminosilicate, (Al2SiO7H4)N, and aluminogermanate, (Al2GeO7H4)36, nanotubes is investigated. It is found that, with the exception of one OHvac localised on the outer wall of the (Al2GeO7H4)36 tube, these defects induce occupied and empty states in the band gap. Those states are found to be highly localised both in energy and in real space. Different magnetisation states are also found, depending on both the chemical composition and the specific side with respect to the tube cavity. The focus of the thesis then shifts to one of the most important and well-studied metaloxide surfaces, the rutile TiO2(110) surface. The reactivity of the surface is revisited, in view of the discrepancy between theory and experiment on the interaction between molecular oxygen and surface hydroxyls. This discrepancy is resolved by proposing that excess charge, associated with the oxygen vacancy and originating from Ti interstitials, is present on the surface. This surface charge opens new reaction channels not theoretically possible otherwise. The study utilises hybrid Density Functional Theory (DFT) calculations and Scanning Tunneling Microscopy (STM) simulations to provide evidence for the proposed surface charging. The last part of the thesis focuses on another surface of TiO2, the (011) surface. TiO2(011) has recently attracted attention due owing to its reported high photocatalytic activity. Several proposed structures of the surface are inconsistent with each other. Recent developments, based on Surface X-Ray Diffraction (SXRD) data and DFT simulations, now agree on a new structure. In this part a review of the various structures is provided and further evidence is given on the validity of the new proposal by providing further insight on the appearance of the surface on the STM.

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40

AHMED, ABDELKADER ABDELHAMID MOHAMED. « Metal oxide semiconductors as humidity and NOx sensors for environmental monitoring ». Doctoral thesis, Politecnico di Torino, 2014. http://hdl.handle.net/11583/2528295.

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Semiconducting metal oxide (SMO) sensors are one of the most widely studied groups of chemiresistive gas sensors due to their unique advantages such as low cost, small size, measurement simplicity, durability, ease of fabrication, and low detection limits (< ppm levels). Moreover, most SMO based sensors tend to be long-lived and somewhat resistant to poisoning. The SMO undergoes reduction or oxidation while reacting with the target gas and this process causes an exchange of electrons at a certain characteristic rate, thereby affecting the sensor’s resistance and yielding a certain signal. The aim of this PhD is to fabricate new semiconducting metal oxide sensors capable of detecting humidity and/or NOx gas. The research is subdivided into three main different parts: - The first is to prepare SMO sensors within a template (inorganic clay e.g. Sepiolite, glass): a) ZnO has been synthesized into the sepiolite structure by means of different acid treatments in order to check the sensitivity of the resulting materials toward humidity and NO2. Different samples have been prepared S1, S2, S6 and S24 for the samples acidified for 1, 2, 6 and 24 hours, respectively. Sepiolite leached for 2 h (S2) showed a significant ability to detect quite low Relative Humidity (RH) values. Also, S2 revealed a significant capability for detecting NO2 and H2 in an optimal working temperature 300°C. b) Crystallization of zinc oxide by melt quenching technique; The idea is to check the possibility to fabricate a percolated network from ZnO crystals within a glass matrix by means of crystallization process then to test the resulting material as NOx gas sensor. A melt with nominal composition 58% ZnO 33.3% B2O3 4% WO3 4% Bi2O3 has been quenched. The chosen glass sample was then subjected to the heat treatment for 15 hours at the temperature close to the established Tx (crystallization temperature). As obtained glass ceramic material with adding a ZnO sol-gel (to improve the adhesion of the ink onto alumina substrate) gives a great ability to detect NO2 at a quite low working temperature (150ºC), in conditions close to the environmental one's. This is a promising approach for glass ceramic materials in sensors application which could be used not only as humidity sensors but also for detecting other several gases with a quite good selectivity. - The second part is Li – doped iron oxide as a new material for NO2 detection: Various compositions of lithium doped hematite containing 1, 2, 5, 10, 15, and 20 atomic percent ‎were synthesized by solid state reaction. Electrochemical impedance spectroscopy ‎‎ (EIS) analyses under air and argon were used to determine the semiconducting behavior of the ‎samples (n- or p-type) and to ‎investigate the sensitivity of these materials towards NO2. Lithium doped hematite samples exhibit an n type semiconducting behavior. Lithium ferrites could work as NO2 sensors at a quite low operating temperature (200°C). Generally, sensor response of lithium ferrites towards NO2 revealed an acceptable linear evolution with gas concentration for some compositions. - The third is commercial SMO; In2O3 and ZnO with different morphologies. The objective of this work is the development of materials with hierarchical architectures for the realization of gas sensors capable of detecting low concentration of NO2 in air at low temperature. Different films have been prepared: ZnO and In2O3 thick films, ZnO thin films prepared by sol-gel technique, ZnO nanorods (NR) prepared by technology template of ZnO films obtained by Sol gel and ZnO nanowires (NW) prepared by electrospinning. ZnO thick film and ZnO thin film have the best sensitivity towards NO2 among the other samples.

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41

Gajera, Dipesh. « Process costing of microchip ». Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4726.

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Thesis (M.S.)--West Virginia University, 2006.
Title from document title page. Document formatted into pages; contains vii, 92 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 85-91).

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42

Wu, Zhenghui. « Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells ». HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.

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Organic photovoltaics have shown much promise as an alternative photovoltaic technology for application in low-cost, large-scale and flexible solar cells. The application of metal oxides in organic solar cells (OSCs) and the impact of the properties of metal oxide/organic hetero-interfaces on cell performance have attracted a lot of attention. The metal oxide/organic interfaces have a crucial impact on interfacial charge transfer, charge collection and the overall device performance. This thesis is aimed at clarifying the principal interfacial phenomena occurring at the metal oxide/organic hetero-interfaces as well as effective engineering of those interfacial properties in OSCs. Photo-generated electrons and holes undergo different recombination processes, e.g., bimolecular recombination and trap-assisted recombination, before being collected by the electrodes in OSCs. Light intensity-dependent current densityvoltage (JV) characteristics of OSCs were analyzed to study the effect of recombination on charge collection efficiency. Effect of metal oxide/organic hetero-interfaces on charge transfers at organic/electrode interface was analyzed using transient photocurrent (TPC) measurements. Light intensity-dependent JV characteristics and TPC characteristics were applied to explore the charge recombination dynamics in OSCs with a metal oxide interlayer. This project concentrated on an in-depth investigation of the physics and the interface phenomena such as interfacial exciton dissociation, charge recombination processes, charge collection and interface engineering for high performing OSCs. The fundamentals about light intensity-dependent J-V characteristics for OSCs were summarized. The relationship between the charge recombination dynamics and light intensity-dependent J-V characteristics in OSCs were developed. Light intensity-dependent JSC, VOC and FF in OSCs made with different bulk-heterojunction (BHJ) systems of PTB7:PC70BM, PTB7-Th:PC70BM and PNB4:PC70BM were investigated. It is found that bimolecular recombination is the most prominent factor limiting the performance of OSCs. For freshly made OSCs fabricated based on the commercial polymers, e.g. PTB7 & PTB7-Th, and the new polymer PNB4 synthesized in-house, the trap-assisted charge recombination process in the BHJ active layer plays a relatively small role. This suggests that reducing the bimolecular recombination in OSCs through selecting proper materials and device structures is crucial for enhancing the power conversion efficiency (PCE) of OCSs. In this work, device structures which enable reducing bimolecular recombination in OSCs were investigated. The effect of ZnO interlayer at the interface between BHJ and Al cathode on the performance of PTB7:PC71BM based OSCs was studied by a combination of theoretical simulation and experimental characterization techniques, e.g., using light intensity-dependent JV characteristic and TPC measurements etc. It shows that ZnO interlayer has a profound effect on the performance of the PTB7:PC70BM-based OSCs, although it does not have a significant influence on the maximum absorptance in the active layer. The origin of the improvement in the cell performance is associated with the efficient charge collection due to the favorable exciton dissociation at the electrode/active layer interface. It is shown that the presence of the ZnO interlayer allows using a thinner active layer without moderating the absorption in the optically optimized control OSCs without the ZnO interlayer. OSCs with a ~10 nm thick ZnO interlayer are found to be favorable for the efficient charge collection, and thereby improving the cell performance. The TPC measurements also reveal that the dissociation of excitons at the metal/organic interface of regular OSCs hinders the electron collection. The unfavorable interfacial exciton dissociation can be removed by interposing a ZnO interlayer at the Al/organic interface, thus bimolecular recombination at the electrode/active layer interface can be reduced for improving the charge collection efficiency. PCE of the OSCs using ZnO interlayer was 6.5%, which is about 20% higher than a control cell (5.4%), having an identical device configuration without a ZnO interlayer. Solution-processed anode interlayer, a mixture of solution-processed MoOX and PEDOT:PSS, was adopted for application in inverted PTB7:PC71BM-based OSCs. The ratio of MoOX to PEDOT:PSS in the mixed solution was optimized for achieving the best cell performance. A PCE of 7.4% was obtained for OSCs with an optimal MoOX-PEDOT:PSS based interlayer, interposed between the BHJ active layer and Ag anode, which means 10% enhancement over the PCE of control cell made with an evaporated MoOX interlayer. Light intensity-dependent JV characteristics implied that the bimolecular recombination in OSCs with a MoOX-PEDOT:PSS interlayer was reduced. TPC measurements showed that the favorable exciton dissociation occurs at the organic/MoOX interface for the inverted OSCs. The favorable interfacial exciton dissociation generates an electrical field within a very small space near the interface, contributing significant additional photocurrent when the effective bias across the active layer in the OSCs is low, and thereby assisting in an efficient charge collection at the organic/electrode interface. In addition to the improvement in the cell performance, the solution-processed MoOX-PEDOT:PSS interlayer does not require a post-annealing treatment, which is beneficial for application in solution-processed tandem and flexible OSCs.

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43

Chun, Young Tea. « Charge transfer characteristic of zinc oxide nanowire devices and their applications ». Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708978.

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44

Ouyang, Qiqing Christine. « Physical model enhancement and exploration of bandgap engineering in novel sub-100nm pMOSFETs / ». Digital version:, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992880.

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45

Haasmann, Daniel Erwin. « Active Defects in 4H–SiC MOS Devices ». Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.

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The research findings presented in this thesis have provided several key contributions towards a better understanding of the SiC–SiO2 interface in SiC MOS structures. The electrically active defects directly responsible for degrading the channel-carrier mobility in 4H–SiC MOSFETs have been identified and a novel technique to detect these defects in 4H–SiC MOS capacitors has been proposed and experimentally demonstrated. With a better understanding of defects at the SiC–SiO2 interface two alternative gate oxide growth processes have been proposed to overcome the practical limitations associated with current NO-nitridation techniques in high-volume, production based oxidation furnaces. This work therefore contributes to the wider research effort towards improving the performance of SiC MOSFETs in several ways. The following paragraphs summarise the key conclusions that have been obtained as a result of this study. Electrically Active Defects and the Channel-Carrier Mobility (Chapter 3) A critical review of defects at the SiC–SiO2 interface exposed a few key discrepancies in both the current understanding of the dominant defects responsible for channel-carrier mobility degradation in 4H–SiC MOSFETs and in the current approach to characterise and evaluate the SiC–SiO2 interface. Firstly, it was recognised that the Shockley-Read-Hall statistical model, based on thermally activated transport for traps spatially located at the semiconductor-oxide interface, cannot be directly applied to describe the transfer mechanism between free conduction band electrons and the shallow NITs near EC. This implication tends to suggest that the NITs near EC in SiC MOS structures cannot be accurately examined using traditional MOS characterisation techniques that are based on this statistical model. Secondly, in accordance with the studies conducted by Saks et. al. [1-3], it was realized that channel-carrier mobility degradation in 4H–SiC MOSFETs is primarily due to the significantly reduced free electron density in the inversion channel. In light of this understanding, the interfacial defects that actively trap channel electrons under strong inversion conditions were considered to be dominant in these devices as opposed to the NITs near EC that are typically examined using conventional MOS characterisation techniques on N-type MOS capacitors in depletion. To further support this hypothesis, a theoretical analysis of the inversion carrier concentration using the charge sheet model was conducted to demonstrate that the NITs with energy levels corresponding to strong inversion are of key importance to the channel-carrier mobility.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
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Zhang, Xibo. « RF integrated circuit design options : from technology to layout / ». View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20ZHANG.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 59-61). Also available in electronic version. Access restricted to campus users.

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李加碧 et Stella Li. « Interface state generation induced by Fowler-Nordheim tunneling in mosdevices ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221403.

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Correll, Jeffrey. « The design and implementation of an 8 bit CMOS microprocessor / ». Online version of thesis, 1992. http://hdl.handle.net/1850/11649.

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Bachelu, Carol R. Carleton University Dissertation Engineering Electrical. « A Topological single-layer routing algorithm and its application to leaf cell synthesis ». Ottawa, 1992.

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Wemple, Ivan L. « Parasitic substrate modeling for monolithic mixed analog/digital circuit design and verification / ». Thesis, Connect to this title online ; UW restricted, 1996. http://hdl.handle.net/1773/5944.

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