Articles de revues : « Metal oxide semiconductors »

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Jeon, Yunchae, Donghyun Lee et Hocheon Yoo. « Recent Advances in Metal-Oxide Thin-Film Transistors : Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications ». Coatings 12, n^o 2 (4 février 2022) : 204. http://dx.doi.org/10.3390/coatings12020204.

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Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications.

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Pandit, Bhishma, et Jaehee Cho. « AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts ». Applied Sciences 8, n^o 11 (1 novembre 2018) : 2098. http://dx.doi.org/10.3390/app8112098.

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.

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Díaz, Carlos, Marjorie Segovia et Maria Luisa Valenzuela. « Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation : A Review ». Photochem 2, n^o 3 (5 août 2022) : 609–27. http://dx.doi.org/10.3390/photochem2030041.

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Most dyes used in various industries are toxic and carcinogenic, thus posing a serious hazard to humans as well as to the marine ecosystem. Therefore, the impact of dyes released into the environment has been studied extensively in the last few years. Heterogeneous photocatalysis has proved to be an efficient tool for degrading both atmospheric and aquatic organic contaminants. It uses the sunlight in the presence of a semiconductor photocatalyst to accelerate the remediation of environmental contaminants and the destruction of highly toxic molecules. To date, photocatalysis has been considered one of the most appealing options for wastewater treatment due to its great potential and high efficiency by using sunlight to remove organic pollutants and harmful bacteria with the aid of a solid photocatalyst. Among the photocatalysts currently used, nanostructured metal oxide semiconductors have been among the most effective. This review paper presents an overview of the recent research improvements on the degradation of dyes by using nanostructured metal oxide semiconductors obtained by a solid-state method. Metal oxides obtained by this method exhibited better photocatalytic efficiency than nanostructured metal oxides obtained using other solution methods in several cases. The present review discusses examples of various nanostructured transition metal oxides—such as TiO2, Fe2O3, NiO, ReO3, IrO2, Rh2O3, Rh/RhO2, and the actinide ThO2—used as photocatalysts on methylene blue. It was found that photocatalytic efficiency depends not only on the bandgap of the metal oxide but also on its morphology. Porous nanostructured metal oxides tend to present higher photocatalytic efficiency than metal oxides with a similar band gap.

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Matsumoto, Y., H. Koinuma, T. Hasegawa, I. Takeuchi, F. Tsui et Young K. Yoo. « Combinatorial Investigation of Spintronic Materials ». MRS Bulletin 28, n^o 10 (octobre 2003) : 734–39. http://dx.doi.org/10.1557/mrs2003.215.

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AbstractHigh-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic semiconductors, and Heusler alloys.

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Robertson, John, et Zhaofu Zhang. « Doping limits in p-type oxide semiconductors ». MRS Bulletin 46, n^o 11 (novembre 2021) : 1037–43. http://dx.doi.org/10.1557/s43577-021-00211-3.

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AbstractThe ability to dope a semiconductor depends on whether the Fermi level can be moved into its valence or conduction bands, on an energy scale referred to the vacuum level. For oxides, there are various suitable n-type oxide semiconductors, but there is a marked absence of similarly suitable p-type oxides. This problem is of interest not only for thin-film transistors for displays, or solar cell electrodes, but also for back-end-of-line devices for the semiconductor industry. This has led to a wide-ranging search for p-type oxides using high-throughput calculations. We note that some proposed p-type metal oxides have cation s-like lone pair states. The defect energies of some of these oxides were calculated in detail. The example SnTa2O6 is of interest, but others have structures more closely based on perovskite structure and are found to have more n-type than p-type character. Graphic abstract

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Yoshitake, Michiko. « General Method for Predicting Interface Bonding at Various Oxide–Metal Interfaces ». Surfaces 7, n^o 2 (3 juin 2024) : 414–27. http://dx.doi.org/10.3390/surfaces7020026.

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Interface termination bonding between metal oxide and metals is discussed from the viewpoint of thermodynamics. The method of interface termination prediction proposed by the authors for Al2O3–metal and ZnO–metal interfaces is extended to a general interface between metal-oxide and metals. The extension of the prediction method to the interface between metal oxides and elemental semiconductors is also discussed. Information on interface bonding was extracted by carefully examining the experimental results and first-principles calculations in the references. The extracted information on interface bonding from references is compared with the results obtained via the proposed prediction method. It is demonstrated that interface termination bonding can be predicted by extending the method to oxide–metal interfaces in general, when there is no interface reaction such as the reduction of oxide, oxidation of metal, or mixed oxide formation. The method uses only basic quantities of pure elements and the formation enthalpy of oxides. Therefore, it can be applied to most of the metals (including elemental semiconductors) in the periodic table and metal oxides with one stable valence. The method is implemented as a software, “InterChemBond”, and can be used free of charge.

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Kim, Jungho, et Jiwan Kim. « Synthesis of NiO for various optoelectronic applications ». Ceramist 25, n^o 3 (30 septembre 2022) : 320–31. http://dx.doi.org/10.31613/ceramist.2022.25.3.02.

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Oxide semiconductors have developed rapidly in a short period of time in various industrial fields due to their ability to be easily manufactured at low temperatures and recoverability of electrical properties. Among these oxide semiconductors, nickel oxide (NiO) is one of the most studied transition metal oxides. NiO is a p-type semiconductor with a wide band gap at room temperature, and has advantages of low toxicity, low cost, and excellent stability. Due to these advantages, NiO is widely used in various industrial fields such as gas sensors. In this paper, various synthesis methods of NiO will be briefly reviewed. Such synthesis methods include organic solvent methods, chemical vapor deposition methods, sol-gel methods, and chemical solution deposition methods. Materials required for each synthesis method, experimental methods, post-processing, and experimental results are briefly described.

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Wu, Jianhao. « Performance comparison and analysis of silicon-based and carbon-based integrated circuits under VLSI ». Applied and Computational Engineering 39, n^o 1 (21 février 2024) : 244–50. http://dx.doi.org/10.54254/2755-2721/39/20230605.

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Since 1960, the semiconductor industry has invented Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) technologies. Subsequently, the semiconductor-based integrated circuit industry has led a new generation of information revolution, driving the rapid development of various electronic circuit technologies worldwide. With the physical limitations of the silicon semiconductor process, Moores Law is also approaching its physical limit. In the search for new semiconductor materials, carbon nanotube semiconductors have become one of the candidate materials for new semiconductor materials due to their many advantages, and their many characteristic parameters are even better than those of silicon semiconductors of the same size. This article introduces the research status, performance characteristics, and comparison of silicon-based and carbon-based integrated circuits, as well as the current application scenarios of silicon-based and carbon-based integrated circuits in the industry, and the many problems encountered. Finally, this article analyses the future development direction of the integrated circuit industry and the possible challenges it may face.

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Li, Jiawei. « Recent Progress of β-Ga2O3 and Transition Metal doped β- Ga2O3 Structure and Properties ». Highlights in Science, Engineering and Technology 99 (18 juin 2024) : 247–52. http://dx.doi.org/10.54097/er1nze77.

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Oxide semiconductor material formed from oxygen and a metal is a compound semiconductor material. Important oxide semiconductor materials include Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, Ga2O3 and others. Oxide semiconductors have been receiving strong attention and are widely used in different fields such as solar cells and photovoltaic technology. Due to the development of technology, the high-performance techniques demand more from the parts. Semiconductor is an intensively researched substance that can be used in a wide range of technologies. β-Ga2O3 is a metal oxide that has good properties which can fit in different applications. However, due to its wide band gap, it is essentially an insulator. In this case, researchers put a lot of effect into the doping of β- Ga2O3 to improve its electronic conductivity. This review summarized the structures and properties of β- Ga2O3 single crystal and the amelioration of the characteristics by transition metal (Mn, Zn, V, Fe, Nb, Ta and W) dopants.

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Adhikari, Sangeeta, et Debasish Sarkar. « Metal oxide semiconductors for dye degradation ». Materials Research Bulletin 72 (décembre 2015) : 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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Sosa Lissarrague, Matías H., Sameer Alshehri, Abdullah Alsalhi, Verónica L. Lassalle et Ignacio López Corral. « Heavy Metal Removal from Aqueous Effluents by TiO2 and ZnO Nanomaterials ». Adsorption Science & ; Technology 2023 (24 janvier 2023) : 1–15. http://dx.doi.org/10.1155/2023/2728305.

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The presence of heavy metals in wastewater, such as Ni, Pb, Cd, V, Cr, and Cu, is a serious environmental problem. This kind of inorganic pollutant is not biodegradable for several years, and its harmful effect is cumulative. Recently, semiconductor nanomaterials based on metal oxides have gained interest due to their efficiency in the removal of heavy metals from contaminated water, by inducing photocatalytic ion reduction when they absorb light of the appropriate wavelength. The most commonly applied semiconductor oxides for these purposes are titanium oxide (TiO2), zinc oxide (ZnO), and binary nanomaterials composed of both types of oxides. The main purpose of this work is to critically analyse the existent literature concerning this topic focusing specially in the most important factors affecting the adsorption or photocatalytic capacities of this type of nanomaterials. In particular, photocatalytic activity is altered by various factors, such as proportion of polymorphs, synthesis method, surface area, concentration of defects and particle size, among others. After a survey of the actual literature, it was found that, although these metal oxides have low absorption capacity for visible light, it is possible to obtain an acceptable heavy metal reduction performance by sensitization with dyes, doping with metallic or nonmetallic atoms, introduction of defects, or the coupling of two or more semiconductors.

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Ye, Heqing, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam et Se Hyun Kim. « Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing ». Nanomaterials 10, n^o 7 (3 juillet 2020) : 1304. http://dx.doi.org/10.3390/nano10071304.

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The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.

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Garcia-Peiro, Jose I., Javier Bonet-Aleta, Carlos J. Bueno-Alejo et Jose L. Hueso. « Recent Advances in the Design and Photocatalytic Enhanced Performance of Gold Plasmonic Nanostructures Decorated with Non-Titania Based Semiconductor Hetero-Nanoarchitectures ». Catalysts 10, n^o 12 (14 décembre 2020) : 1459. http://dx.doi.org/10.3390/catal10121459.

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Plasmonic photocatalysts combining metallic nanoparticles and semiconductors have been aimed as versatile alternatives to drive light-assisted catalytic chemical reactions beyond the ultraviolet (UV) regions, and overcome one of the major drawbacks of the most exploited photocatalysts (TiO2 or ZnO). The strong size and morphology dependence of metallic nanostructures to tune their visible to near-infrared (vis-NIR) light harvesting capabilities has been combined with the design of a wide variety of architectures for the semiconductor supports to promote the selective activity of specific crystallographic facets. The search for efficient heterojunctions has been subjected to numerous studies, especially those involving gold nanostructures and titania semiconductors. In the present review, we paid special attention to the most recent advances in the design of gold-semiconductor hetero-nanostructures including emerging metal oxides such as cerium oxide or copper oxide (CeO2 or Cu2O) or metal chalcogenides such as copper sulfide or cadmium sulfides (CuS or CdS). These alternative hybrid materials were thoroughly built in past years to target research fields of strong impact, such as solar energy conversion, water splitting, environmental chemistry, or nanomedicine. Herein, we evaluate the influence of tuning the morphologies of the plasmonic gold nanostructures or the semiconductor interacting structures, and how these variations in geometry, either individual or combined, have a significant influence on the final photocatalytic performance.

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John Chelliah, Cyril R. A., et Rajesh Swaminathan. « Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures ». Nanotechnology Reviews 6, n^o 6 (27 novembre 2017) : 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.

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Meng, Fan-Jian, Rui-Feng Xin et Shan-Xin Li. « Metal Oxide Heterostructures for Improving Gas Sensing Properties : A Review ». Materials 16, n^o 1 (27 décembre 2022) : 263. http://dx.doi.org/10.3390/ma16010263.

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Metal oxide semiconductor gas sensors are widely used to detect toxic and inflammable gases in industrial production and daily life. The main research hotspot in this field is the synthesis of gas sensing materials. Previous studies have shown that incorporating two or more metal oxides to form a heterojunction interface can exhibit superior gas sensing performance in response and selectivity compared with single phase. This review focuses on mainly the synthesis methods and gas sensing mechanisms of metal oxide heterostructures. A significant number of heterostructures with different morphologies and shapes have been fabricated, which exhibit specific sensing performance toward a specific target gas. Among these synthesis methods, the hydrothermal method is noteworthy due to the fabrication of diverse structures, such as nanorod-like, nanoflower-like, and hollow sphere structures with enhanced sensing properties. In addition, it should be noted that the combination of different synthesis methods is also an efficient way to obtain metal oxide heterostructures with novel morphologies. Despite advanced methods in the metal oxide semiconductors and nanotechnology field, there are still some new issues which deserve further investigation, such as long-term chemical stability of sensing materials, reproducibility of the fabrication process, and selectivity toward homogeneous gases. Moreover, the gas sensing mechanism of metal oxide heterostructures is controversial. It should be clarified so as to further integrate laboratory theory research with practical exploitation.

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Yang, Allen Jian, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu et al. « Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors ». Nature Electronics 5, n^o 4 (avril 2022) : 233–40. http://dx.doi.org/10.1038/s41928-022-00753-7.

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AbstractTwo-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 108 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec−1. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.

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Li, Haoyang, Yue Zhou, Zhihao Liang, Honglong Ning, Xiao Fu, Zhuohui Xu, Tian Qiu, Wei Xu, Rihui Yao et Junbiao Peng. « High-Entropy Oxides : Advanced Research on Electrical Properties ». Coatings 11, n^o 6 (24 mai 2021) : 628. http://dx.doi.org/10.3390/coatings11060628.

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The concept of “high entropy” was first proposed while exploring the unknown center of the metal alloy phase diagram, and then expanded to oxides. The colossal dielectric constant found on the bulk high-entropy oxides (HEOs) reveals the potential application of the high-entropy oxides in the dielectric aspects. Despite the fact that known HEO thin films have not been reported in the field of dielectric properties so far, with the high-entropy effects and theoretical guidance of high entropy, it is predictable that they will be discovered. Currently, researchers are verifying that appropriately increasing the oxygen content in the oxide, raising the temperature and raising the pressure during preparation have an obvious influence on thin films’ resistivity, which may be the guidance on obtaining an HEO film large dielectric constant. Finally, it could composite a metal–insulator–metal capacitor, and contribute to sensors and energy storage devices’ development; alternatively, it could be put into application in emerging thin-film transistor technologies, such as those based on amorphous metal oxide semiconductors, semiconducting carbon nanotubes, and organic semiconductors.

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Ouyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin et Hui Sun. « Research Progress of p-Type Oxide Thin-Film Transistors ». Materials 15, n^o 14 (8 juillet 2022) : 4781. http://dx.doi.org/10.3390/ma15144781.

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

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Pascariu, Petronela, Carmen Gherasim et Anton Airinei. « Metal Oxide Nanostructures (MONs) as Photocatalysts for Ciprofloxacin Degradation ». International Journal of Molecular Sciences 24, n^o 11 (31 mai 2023) : 9564. http://dx.doi.org/10.3390/ijms24119564.

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In recent years, organic pollutants have become a global problem due to their negative impact on human health and the environment. Photocatalysis is one of the most promising methods for the removal of organic pollutants from wastewater, and oxide semiconductor materials have proven to be among the best in this regard. This paper presents the evolution of the development of metal oxide nanostructures (MONs) as photocatalysts for ciprofloxacin degradation. It begins with an overview of the role of these materials in photocatalysis; then, it discusses methods of obtaining them. Then, a detailed review of the most important oxide semiconductors (ZnO, TiO2, CuO, etc.) and alternatives for improving their photocatalytic performance is provided. Finally, a study of the degradation of ciprofloxacin in the presence of oxide semiconductor materials and the main factors affecting photocatalytic degradation is carried out. It is well known that antibiotics (in this case, ciprofloxacin) are toxic and non-biodegradable, which can pose a threat to the environment and human health. Antibiotic residues have several negative impacts, including antibiotic resistance and disruption of photosynthetic processes.

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Gupta, Himanshi, Naina Gautam, Subodh K. Gautam, R. G. Singh et Fouran Singh. « Semiconductor-to-metal transition in nanocomposites of wide bandgap oxide semiconductors ». Journal of Alloys and Compounds 894 (février 2022) : 162392. http://dx.doi.org/10.1016/j.jallcom.2021.162392.

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Lin, Chih-Hsuan, et Kuei-Ann Wen. « Power Pad Based on Structure Stacking for Ultralow-Power Three-Axis Capacitive Sensing Applications ». Journal of Nanoelectronics and Optoelectronics 16, n^o 4 (1 avril 2021) : 630–41. http://dx.doi.org/10.1166/jno.2021.2982.

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Ultralow-power sensing systems are a trend in handheld devices. The leakage-current-induced power consumption of traditional power pads has not been able to satisfy the specifications of three-axis ultralow-power sensing systems at high temperatures. In this paper, we present a transient detector and delay cell based on resistor and capacitor charge and discharge, two layers of structure stacking based on a metal–oxide–semiconductor, and gate-driven/substrate-driven/gate and substrate-driven methods to guide away the electrostatic current when electrostatic discharge events occur without influencing the three-axis ultralow-power sensing system. Then, we propose a stacking structure based on a metal–oxide–semiconductor to decrease leakage-current-induced power consumption, which is proportional to temperature. Moreover, we analyze whether the gate-driven/substrate-driven/gate method or substrate-driven method is most cost effective as well as the mechanism of substrate noise suppression of the two layers of structure stacking. The power pad based on the gate-driven metal–oxide–semiconductor with three structural stacks, power pad based on the gate-driven metal–oxide–semiconductor with structural stacking, power pad based on the substrate-driven metal–oxide–semiconductor with structural stacking, and the power pad based on both the gate-driven and substrate-driven metal–oxide–semiconductors with structural stacking have an electrostatic discharge standard with both positive and negative modes higher than 8/8, 8/8, 5/- kV, and 5.5/- kV for the human body model and an electrostatic discharge standard with both positive and negative modes higher than 1000/1000, 600/550, 500/- V, 300/- V for the machine model. The leakage-current-induced power consumption of the power pad based on the gate-driven metal–oxide–semiconductor with structure stacking, the power pad based on the substrate-driven metal–oxide–semiconductor with structure stacking, the power pad based on both the gate-driven, and the substrate-driven metal–oxide–semiconductor with structure stacking are approximately 3.5 pW/16.45 nW, 20 pW/- nW, and 2.89 pW/16.89 nW at 25/125 °C when the voltage of the input pin was 1.0 V.

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Kajitani, Tsuyoshi, Yuzuru Miyazaki, Kei Hayashi, Kunio Yubuta, X. Y. Huang et W. Koshibae. « Thermoelectric Energy Conversion and Ceramic Thermoelectrics ». Materials Science Forum 671 (janvier 2011) : 1–20. http://dx.doi.org/10.4028/www.scientific.net/msf.671.1.

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Oxide thermoelectrics are relatively new materials that are workable at temperatures in the range of 400K≤T≤1200K. There are several types of thermoelectric oxide, namely, cobalt oxides (p-type semi-conductors), manganese oxides (n-type) and zinc oxides (n-type semi-conductors) for high temperature energy harvesting. The Seebeck coefficient of 3d metal oxide thermoelectrics is relatively high due to either high density of states at Fermi surfaces or spin entropy flow associated with the carrier flow. The spin entropy part dominates the Seebeck coefficient of 3d-metal oxides at temperatures above 300K. Introduction of impurity particles or quantum-well structures to enhance thermionic emission and energy filtering effects for the oxide semiconductors may lead to a significant improvement of thermoelectric performance.

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Mao, Tan, Mengchen Liu, Liyuan Lin, Youliang Cheng et Changqing Fang. « A Study on Doping and Compound of Zinc Oxide Photocatalysts ». Polymers 14, n^o 21 (23 octobre 2022) : 4484. http://dx.doi.org/10.3390/polym14214484.

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As an excellent semiconductor photocatalyst, zinc oxide is widely used in the field of photocatalysis and is regarded as one of the most reliable materials to solve environmental problems. However, because its band gap energy limits the absorption of visible light and reduces the efficiency of catalytic degradation, it needs to be doped with other substances or compounded with other substances and precious metal. This paper summarizes the research on this aspect at home and abroad in recent years, introduces the doping of transition metal ions by zinc oxide, the compounding of zinc oxide with precious metals or other semiconductors, and the prospect of further improving the catalytic efficiency of zno photocatalyst is also put forward.

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Kiriakidis, George, et Vassilios Binas. « Metal oxide semiconductors as visible light photocatalysts ». Journal of the Korean Physical Society 65, n^o 3 (août 2014) : 297–302. http://dx.doi.org/10.3938/jkps.65.297.

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Saha, H., et C. Chaudhuri. « Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration ». Defence Science Journal 59, n^o 6 (24 novembre 2009) : 557–67. http://dx.doi.org/10.14429/dsj.59.1560.

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Toriumi, Akira. « 0.1μm complementary metal–oxide–semiconductors and beyond ». Journal of Vacuum Science & ; Technology B : Microelectronics and Nanometer Structures 14, n^o 6 (novembre 1996) : 4020. http://dx.doi.org/10.1116/1.588635.

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Anta, Juan A. « Electron transport in nanostructured metal-oxide semiconductors ». Current Opinion in Colloid & ; Interface Science 17, n^o 3 (juin 2012) : 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.

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Lee, Sunghwan, Donghun Lee, Fei Qin, Yuxuan Zhang, Molly Rothschild, Han Wook Song et Kwangsoo No. « (Invited) Oxide Electronics and Recent Progress in Bipolar Applications ». ECS Meeting Abstracts MA2022-01, n^o 19 (7 juillet 2022) : 1071. http://dx.doi.org/10.1149/ma2022-01191071mtgabs.

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The discovery of oxide electronics is of increasing importance today as one of the most promising new technologies and manufacturing processes for a variety of electronic and optoelectronic applications such as next-generation displays, batteries, solar cells, memory devices, and photodetectors[1]. The high potential use seen in oxide electronics is due primarily to their high carrier mobilities and their ability to be fabricated at low temperatures[2]. However, since the majority of oxide semiconductors are n-type oxides, current applications are limited to unipolar devices, eventually developing oxide-based bipolar devices such as p-n diodes and complementary metal-oxide semiconductors. We have contributed to a wide range of oxide semiconductors and their electronics and optoelectronic device applications. Particularly, we have demonstrated n-type oxide-based thin film transistors (TFT), integrating In2O3-based n-type oxide semiconductors from binary cation materials to ternary cation species including InZnO, InGaZnO (IGZO), and InAlZnO. We have suggested channel/metallization contact strategies to achieve stable and high TFT performance[3, 4], identified vacancy-based native defect doping mechanisms[5], suggested interfacial buffer layers to promote charge injection capability[6], and established the role of third cation species on the carrier generation and carrier transport[7]. More recently, we have reported facile manufacturing of p-type SnOx through reactive magnetron sputtering from a Sn metal target[8]. The fabricated p-SnOx was found to be devoid of metallic phase of Sn from x-ray photoelectron spectroscopy and demonstrated stable performance in a fully oxide-based p-n heterojunction together with n-InGaZnO. The oxide-based p-n junctions exhibited a high rectification ratio greater than 103 at ±3 V, a low saturation current of ~2x10-10, and a small turn-on voltage of -0.5 V. In this presentation, we review recent achievements and still remaining issues in transition metal oxide semiconductors and their device applications, in particular, bipolar applications including p-n heterostructures and complementary metal-oxide-semiconductor devices as well as single polarity devices such as TFTs and memristors. In addition, the fundamental mechanisms of carrier transport behaviors and doping mechanisms that govern the performance of these oxide-based devices will also be discussed. ACKNOWLEDGMENT This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 20011028) by KRISS. K.N. was supported by Basic Science Research Program (NRF-2021R11A1A01051246) through the NRF Korea funded by the Ministry of Education. REFERENCES [1] K. Nomura et al., Nature, vol. 432, no. 7016, pp. 488-492, Nov 25 2004. [2] D. C. Paine et al., Thin Solid Films, vol. 516, no. 17, pp. 5894-5898, Jul 1 2008. [3] S. Lee et al., Journal of Applied Physics, vol. 109, no. 6, p. 063702, Mar 15 2011, Art. no. 063702. [4] S. Lee et al., Applied Physics Letters, vol. 104, no. 25, p. 252103, 2014. [5] S. Lee et al., Applied Physics Letters, vol. 102, no. 5, p. 052101, Feb 4 2013, Art. no. 052101. [6] M. Liu et al., ACS Applied Electronic Materials, vol. 3, no. 6, pp. 2703-2711, 2021/06/22 2021. [7] A. Reed et al., Journal of Materials Chemistry C, 10.1039/D0TC02655G vol. 8, no. 39, pp. 13798-13810, 2020. [8] D. H. Lee et al., ACS Applied Materials & Interfaces, vol. 13, no. 46, pp. 55676-55686, 2021/11/24 2021.

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Constantinoiu, Izabela, et Cristian Viespe. « ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors : A Review ». Sensors 20, n^o 18 (8 septembre 2020) : 5118. http://dx.doi.org/10.3390/s20185118.

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Surface acoustic wave (SAW) gas sensors are of continuous development interest to researchers due to their sensitivity, short detection time, and reliability. Among the most used materials to achieve the sensitive film of SAW sensors are metal oxide semiconductors, which are highlighted by thermal and chemical stability, by the presence on their surface of free electrons and also by the possibility of being used in different morphologies. For different types of gases, certain metal oxide semiconductors are used, and ZnO is an important representative for this category of materials in the field of sensors. Having a great potential for the development of SAW sensors, the discussion related to the development of the sensitivity of metal oxide semiconductors, especially ZnO, by the synthesis method or by obtaining new materials, is suitable and necessary to have an overview of the latest results in this domain.

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Yang, Sheng-Hsiung. « Solution-Processed Metal Oxide Nanostructures for Carrier Transport ». Nanomaterials 13, n^o 8 (11 avril 2023) : 1331. http://dx.doi.org/10.3390/nano13081331.

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Dadkhah, Mehran, et Jean-Marc Tulliani. « Green Synthesis of Metal Oxides Semiconductors for Gas Sensing Applications ». Sensors 22, n^o 13 (21 juin 2022) : 4669. http://dx.doi.org/10.3390/s22134669.

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During recent decades, metal oxide semiconductors (MOS) have sparked more attention in various applications and industries due to their excellent sensing characteristics, thermal stability, abundance, and ease of synthesis. They are reliable and accurate for measuring and monitoring environmentally important toxic gases, such as NO2, NO, N2O, H2S, CO, NH3, CH4, SO2, and CO2. Compared to other sensing technologies, MOS sensors are lightweight, relatively inexpensive, robust, and have high material sensitivity with fast response times. Green nanotechnology is a developing branch of nanotechnology and aims to decrease the negative effects of the production and application of nanomaterials. For this purpose, organic solvents and chemical reagents are not used to prepare metal nanoparticles. On the contrary, the synthesis of metal or metal oxide nanoparticles is done by microorganisms, either from plant extracts or fungi, yeast, algae, and bacteria. Thus, this review aims at illustrating the possible green synthesis of different metal oxides such as ZnO, TiO2, CeO2, SnO2, In2O3, CuO, NiO, WO3, and Fe3O4, as well as metallic nanoparticles doping.

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Stewart, Anthony D., Brent P. Gila, Cammy R. Abernathy et S. J. Pearton. « Growth of (Sm_xGa_1−x)₂O₃ by molecular beam epitaxy ». Journal of Vacuum Science & ; Technology A 40, n^o 6 (décembre 2022) : 062701. http://dx.doi.org/10.1116/6.0002135.

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The (SmxGa1−x)2O3 alloy system is a potential new dielectric for compound semiconductors such as GaAs. Using molecular beam epitaxy under metal-modulated growth conditions, we grew the binary oxide, Sm2O3, at two substrate temperatures (100 and 500 °C) and optimized the structural, morphological, and electrical properties of the films. Decreasing the Sm cell temperature suppressed the formation of the monoclinic phase and promoted the growth of the cubic phase. Next, the ternary oxide, (SmxGa1−x)2O3, was deposited to investigate the effects of Ga incorporation. Optimization experiments were used to determine the effects of substrate temperature and samarium cell temperature (i.e., growth rate) on film stoichiometry, phase distribution, and microstructure in these films. Films grown at 500 °C showed significant surface roughness and the presence of multiple crystalline phases. Since all of the Sm-based oxides (i.e., samarium oxide with and without gallium) were found to have unbonded Sm metal, annealing experiments were carried out in oxygen and forming gas to determine the effects of annealing on film stoichiometry. The motivation behind annealing in forming gas was to see whether this commonly used technique for reducing interface densities could improve the film quality. GaAs metal-oxide-semiconductor diodes with (SmxGa1−x)2O3 showed breakdown fields at 1 mA/cm2 of 4.35 MV/cm, which decreased with increasing Sm unbonded metal content in the films.

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Kaneko, Kentaro, Yoshito Ito, Takayuki Uchida et Shizuo Fujita. « Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors ». Applied Physics Express 8, n^o 9 (1 septembre 2015) : 095503. http://dx.doi.org/10.7567/apex.8.095503.

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Park, Myeongjin, Jeongkyun Roh, Jaehoon Lim, Hyunkoo Lee et Donggu Lee. « Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes ». Nanomaterials 10, n^o 4 (11 avril 2020) : 726. http://dx.doi.org/10.3390/nano10040726.

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The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO2) bilayer stacks. The employment of SnO2 for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices.

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Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah et Zurianti Abdul Rahman. « Organic Semiconductors : Applications in Solar Photovoltaic and Sensor Devices ». Materials Science Forum 737 (janvier 2013) : 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of organic semiconductors raises the quest for a deep understanding of fundamental issues and relevant electronic processes. Organic semiconductor thin film is sandwiched between two metal electrodes of indium tin oxide (ITO) and aluminum to form organic photovoltaic solar cell. Several types of organic semiconductors have been utilized as the photoactive layer in the solution processable organic solar cells. The performance of the fabricated solar cells can be improved by dissolving the material in the right choice of solvent, annealing of organic thin film, slowly forming the thin film and introducing an infra-red absorbance layer. Besides, organic semiconductor-based sensors can be fabricated utilizing either in a sandwidch type or planar type device. Some of these techniques and the experimental results are presented.

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Dadkhah, Mehran, et Jean-Marc Tulliani. « Nanostructured Metal Oxide Semiconductors towards Greenhouse Gas Detection ». Chemosensors 10, n^o 2 (30 janvier 2022) : 57. http://dx.doi.org/10.3390/chemosensors10020057.

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Climate change and global warming are two huge current threats due to continuous anthropogenic emissions of greenhouse gases (GHGs) in the Earth’s atmosphere. Accurate measurements and reliable quantifications of GHG emissions in air are thus of primary importance to the study of climate change and for taking mitigation actions. Therefore, the detection of GHGs should be the first step when trying to reduce their concentration in the environment. Throughout recent decades, nanostructured metal oxide semiconductors have been found to be reliable and accurate for the detection of many different toxic gases in air. Thus, the aim of this article is to present a comprehensive review of the development of various metal oxide semiconductors, as well as to discuss their strong and weak points for GHG detection.

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Wang, Yucheng, Yuming Zhang, Tiqiang Pang, Jie Xu, Ziyang Hu, Yuejin Zhu, Xiaoyan Tang, Suzhen Luan et Renxu Jia. « Ionic behavior of organic–inorganic metal halide perovskite based metal-oxide-semiconductor capacitors ». Physical Chemistry Chemical Physics 19, n^o 20 (2017) : 13002–9. http://dx.doi.org/10.1039/c7cp01799e.

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Shen, Yinfeng, Yiping Liu, Chao Fan, Qudong Wang, Ming Li, Zhi Yang et Liming Gao. « Enhanced Acetone Sensing Properties Based on Au-Pd Decorated ZnO Nanorod Gas Sensor ». Sensors 24, n^o 7 (26 mars 2024) : 2110. http://dx.doi.org/10.3390/s24072110.

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The mature processes of metal oxide semiconductors (MOS) have attracted considerable interest. However, the low sensitivity of metal oxide semiconductor gas sensors is still challenging, and constrains its practical applications. Bimetallic nanoparticles are of interest owing to their excellent catalytic properties. This excellent feature of bimetallic nanoparticles can solve the problems existing in MOS gas sensors, such as the low response, high operating temperature and slow response time. To enhance acetone sensing performance, we successfully synthesized Au-Pd/ZnO nanorods. In this work, we discovered that Au-Pd nanoparticles modified on ZnO nanorods can remarkably enhance sensor response. The Au-Pd/ZnO gas sensor has long-term stability and an excellent response/recovery process. This excellent sensing performance is attributed to the synergistic catalytic effect of bimetallic AuPd nanoparticles. Moreover, the electronic and chemical sensitization of noble metals also makes a great contribution. This work presents a simple method for preparing Au-Pd/ZnO nanorods and provides a new solution for the detection of acetone based on metal oxide semiconductor.

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Xu, Kang, Yi Wang, Yuda Zhao et Yang Chai. « Modulation doping of transition metal dichalcogenide/oxide heterostructures ». Journal of Materials Chemistry C 5, n^o 2 (2017) : 376–81. http://dx.doi.org/10.1039/c6tc04640a.

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Lačević, Amela, et Edina Vranić. « Different digital imaging techniques in dental practice ». Bosnian Journal of Basic Medical Sciences 4, n^o 2 (20 mai 2004) : 37–40. http://dx.doi.org/10.17305/bjbms.2004.3412.

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Different imaging techniques are used to pick up the signal of interest in digital sensors, including charge-coupled devices (CCD), complementary metal-oxide semiconductors (CMOS), photostimulable phosphors plates (PSP) and tuned-aperture computed tomography (TACT) Digital radiography sensors are divided into: storage phosphor plates (SPP) called photostimulable phosphor plates (PSP), silicon devices such as charge-coupled devices (CCD) or complementary metal oxide semiconductors (CMOS).Relatively new type of imaging that may hold advantage over current radiographic modalities is tuned-aperture computed tomography (TACT).

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Convertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund et Lukas Czornomaz. « InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities ». Materials 12, n^o 1 (27 décembre 2018) : 87. http://dx.doi.org/10.3390/ma12010087.

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III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n+ InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 µA/µm and subthreshold slope of about 85 mV/dec.

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Zhang, Xuan, et Sung Woon Cho. « Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors ». Micromachines 14, n^o 10 (27 septembre 2023) : 1839. http://dx.doi.org/10.3390/mi14101839.

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In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used in the BCWE process cause unintended performance degradation of oxide semiconductors, making it difficult to implement oxide TFT circuits through industrial-scale metallization processes. Herein, we propose composition engineering of oxide semiconductors to enhance the chemical durability and electrical stability of oxide semiconductors. The chemical durability of InZnO against Al etchants can be improved by increasing the content of indium oxide, which has a higher chemical resistance than zinc oxide. As a result, A damage-free BCWE-based metallization process was successfully demonstrated for oxide TFTs using In-rich InZnO semiconductors. Furthermore, In-rich InZnO TFTs with wet-etched Al electrodes exhibited electrical performance comparable to that of lift-off Al electrodes, without chemical attack issues.

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Sendi, Aymen, Philippe Menini, Myrtil L. Kahn, Katia Fajerwerg et Pierre Fau. « Effect of Nanostructured Octahedral SnO2 Added with a Binary Mixture P-Type and N-Type Metal Oxide on CO Detection ». Proceedings 2, n^o 13 (3 décembre 2018) : 986. http://dx.doi.org/10.3390/proceedings2130986.

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In this work, we study the effect of nanostructured octahedral SnO2 added with a binary mixture p-type and n-type metal oxide semiconductors of CuO and ZnO, on CO detection at two concentrations (100 ppm and 1000 ppm). These metal oxides (SnO2 and binary mixture of CuO75%/ZnO25%) are prepared in the form of a serigraphy paste and deposited on an optimized silicon micro-hotplate. The sensors can be operated at temperature of 550 °C with a low energy consumption of only 55 mW. The binary and ternary mixtures of metal oxide are operated at different working temperature to optimize their sensitivity to CO.

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Tutov, E. A., S. V. Ryabtsev, E. E. Tutov et E. N. Bormontov. « Silicon MOS structures with nonstoichiometric metal-oxide semiconductors ». Technical Physics 51, n^o 12 (décembre 2006) : 1604–7. http://dx.doi.org/10.1134/s1063784206120097.

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Hossein-Babaei, Faramarz, Saeed Masoumi et Amirreza Noori. « Seebeck voltage measurement in undoped metal oxide semiconductors ». Measurement Science and Technology 28, n^o 11 (12 octobre 2017) : 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

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CAROTTA, M., V. GUIDI, G. MARTINELLI, M. NAGLIATI, D. PUZZOVIO et D. VECCHI. « Sensing of volatile alkanes by metal-oxide semiconductors ». Sensors and Actuators B : Chemical 130, n^o 1 (14 mars 2008) : 497–501. http://dx.doi.org/10.1016/j.snb.2007.09.053.

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Zhou, Xinran, Xiaowei Cheng, Yongheng Zhu, Ahmed A. Elzatahry, Abdulaziz Alghamdi, Yonghui Deng et Dongyuan Zhao. « Ordered porous metal oxide semiconductors for gas sensing ». Chinese Chemical Letters 29, n^o 3 (mars 2018) : 405–16. http://dx.doi.org/10.1016/j.cclet.2017.06.021.

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Hamers, Robert J., Scott A. Chambers, Paul E. Evans, Ryan Franking, Zachary Gerbec, Padma Gopalan, Heesuk Kim et al. « Molecular and biomolecular interfaces to metal oxide semiconductors ». physica status solidi (c) 7, n^o 2 (février 2010) : 200–205. http://dx.doi.org/10.1002/pssc.200982472.

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Sun, Dongjin, Yifan Luo, Marc Debliquy et Chao Zhang. « Graphene-enhanced metal oxide gas sensors at room temperature : a review ». Beilstein Journal of Nanotechnology 9 (9 novembre 2018) : 2832–44. http://dx.doi.org/10.3762/bjnano.9.264.

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Owing to the excellent sensitivity to gases, metal-oxide semiconductors (MOS) are widely used as materials for gas sensing. Usually, MOS gas sensors have some common shortages, such as relatively poor selectivity and high operating temperature. Graphene has drawn much attention as a gas sensing material in recent years because it can even work at room temperature, which reduces power consumption. However, the low sensitivity and long recovery time of the graphene-based sensors limit its further development. The combination of metal-oxide semiconductors and graphene may significantly improve the sensing performance, especially the selectivity and response/recovery rate at room temperature. In this review, we have summarized the latest progress of graphene/metal-oxide gas sensors for the detection of NO2, NH3, CO and some volatile organic compounds (VOCs) at room temperature. Meanwhile, the sensing performance and sensing mechanism of the sensors are discussed. The improved experimental schemes are raised and the critical research directions of graphene/metal-oxide sensors in the future are proposed.

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Hultquist, Gunnar, C. Anghel et P. Szakàlos. « Effects of Hydrogen on the Corrosion Resistance of Metallic Materials and Semiconductors ». Materials Science Forum 522-523 (août 2006) : 139–46. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.139.

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For long time it is known that protons in aqueous solutions have a detrimental effect on metallic materials. Relatively recently, it has also been observed in aqueous solution that the pitting corrosion resistance of Cr, stainless steel 304 and 310 decreases and the anodic dissolution rate increases due to the presence of hydrogen in the metal. In gas phase a high oxidation rate has been observed for hydrogen containing Cr and Fe. Hydrogen in the substrate can also enhance the oxidation of Fe in SS 316 and As in GaAs. All these results suggest enhanced dissolution in aqueous solution and enhanced oxide growth at the oxide/gas interface in gas phase oxidation due to hydrogen promoted outward-transport of substrate components. A possible mechanism for such out-transport is an increased metal ion diffusivity in the metal-oxide due to a high abundance of metal ion vacancies generated by hydrogen. In contrast to all the above examples, also positive effects of hydrogen have been identified under certain conditions. In an attempt to understand both the negative and the positive effects the concept of a beneficial, balanced oxide growth is used. In this concept a certain amount of hydrogen can be beneficial in the oxidation by improving the balance between oxygen-ion and metalion transport, leading to more dense and protective oxides. Depending on the temperature, H2 in air is considered as either a sink or a source for hydrogen in materials.

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