Bibliographies thématiques / Optoelectronic devices / Articles de revues
Pour voir les autres types de publications sur ce sujet consultez le lien suivant : Optoelectronic devices.

Articles de revues sur le sujet « Optoelectronic devices »

Auteur : Grafiati
Publié le 4 juin 2021
Mis à jour le 29 juillet 2024

Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres

Choisissez une source :

Consultez les 50 meilleurs articles de revues pour votre recherche sur le sujet « Optoelectronic devices ».

À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.

Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.

Parcourez les articles de revues sur diverses disciplines et organisez correctement votre bibliographie.

1

Miroshnichenko, Anna S., Vladimir Neplokh, Ivan S. Mukhin et Regina M. Islamova. « Silicone Materials for Flexible Optoelectronic Devices ». Materials 15, no 24 (7 décembre 2022) : 8731. http://dx.doi.org/10.3390/ma15248731.

Texte intégral
Résumé :
Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs based on arrays of III–V nanowires (NWs). In this review, we analyze the currently existing types of silicone materials and their main properties, which are used in optoelectronic device development.
Styles APA, Harvard, Vancouver, ISO, etc.
2

Kausar, Ayesha, Ishaq Ahmad, Malik Maaza, M. H. Eisa et Patrizia Bocchetta. « Polymer/Fullerene Nanocomposite for Optoelectronics—Moving toward Green Technology ». Journal of Composites Science 6, no 12 (16 décembre 2022) : 393. http://dx.doi.org/10.3390/jcs6120393.

Texte intégral
Résumé :
Optoelectronic devices have been developed using the polymer/fullerene nanocomposite, as focused in this review. The polymer/fullerene nanocomposite shows significant structural, electronics, optical, and useful physical properties in optoelectronics. Non-conducting and conducting polymeric nanocomposites have been applied in optoelectronics, such as light-emitting diodes, solar cells, and sensors. Inclusion of fullerene has further broadened the methodological application of the polymer/fullerene nanocomposite. The polymeric matrices and fullerene may have covalent or physical interactions for charge or electron transportation and superior optical features. Green systems have also been explored in optoelectronic devices; however, due to limited efforts, further design innovations are desirable in green optoelectronics. Nevertheless, the advantages and challenges of the green polymer/fullerene nanocomposite in optoelectronic devices yet need to be explored.
Styles APA, Harvard, Vancouver, ISO, etc.
3

Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan et Dandan Sang. « A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction ». Molecules 28, no 3 (30 janvier 2023) : 1334. http://dx.doi.org/10.3390/molecules28031334.

Texte intégral
Résumé :
Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.
Styles APA, Harvard, Vancouver, ISO, etc.
4

Alles, M. A., S. M. Kovalev et S. V. Sokolov. « Optoelectronic Defuzzification Devices ». Физические основы приборостроения 1, no 3 (15 septembre 2012) : 83–91. http://dx.doi.org/10.25210/jfop-1203-083091.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
5

Bhattacharya, Pallab, et Lily Y. Pang. « Semiconductor Optoelectronic Devices ». Physics Today 47, no 12 (décembre 1994) : 64. http://dx.doi.org/10.1063/1.2808754.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
6

Osten, W. « Advanced Optoelectronic Devices ». Optics & ; Laser Technology 31, no 8 (novembre 1999) : 613–14. http://dx.doi.org/10.1016/s0030-3992(00)00008-6.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
7

Jerrard, H. G. « Picosecond optoelectronic devices ». Optics & ; Laser Technology 18, no 2 (avril 1986) : 105. http://dx.doi.org/10.1016/0030-3992(86)90049-6.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
8

Chapman, David. « Optoelectronic semiconductor devices ». Microelectronics Journal 25, no 8 (novembre 1994) : 769. http://dx.doi.org/10.1016/0026-2692(94)90143-0.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
9

Djuris˘Ić, A. B., et W. K. Chan. « Organic Optoelectronic Devices ». HKIE Transactions 11, no 2 (janvier 2004) : 44–52. http://dx.doi.org/10.1080/1023697x.2004.10667955.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
10

Vazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin et Kostantin Subkhankulov. « OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES ». Electrical and data processing facilities and systems 18, no 3-4 (2022) : 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.

Texte intégral
Résumé :
Relevance Currently, optoelectronic devices based on diffraction gratings from standing elastic waves are widely used. This is due to the fact that such devices are small in size, allow realtime measurements and have high accuracy, speed and reliability. A review of foreign patents and scientific and technical literature shows that in Japan, the USA, Germany and other countries, intensive work has been carried out in recent years to create optoelectronic devices as part of information-measuring systems based on the use of diffraction gratings from standing elastic waves. Such work is also carried out in Russia. Today, optoelectronic devices are widely used in various fields of industry, medicine, ecology, etc. Aim of research It is necessary to investigate the prospects of research on the development of optoelectronic devices based on diffraction gratings from standing elastic waves. It is necessary to consider the physics of processes in the field of acousto-optic interactions. It is important to give the main characteristics and possible applications of optoelectronic devices based on diffraction gratings from standing elastic waves. Research objects Light and sound waves interacting with each other when they pass through the same medium, diffraction grating, optoelectronic device. Research methods Mathematical methods of calculation and analysis. Results The need for research in the field of optoelectronic devices based on diffraction gratings from standing elastic waves is formulated. It is shown that when passing through the same medium, light and sound waves interact with each other. Light is scattered on a sound wave, as on a diffraction grating. Recommendations for the design of optoelectronic devices based on diffraction gratings from standing elastic waves are proposed. Possible areas of application of optoelectronic devices based on diffraction gratings from standing elastic waves are considered. Keywords: acousto-optics, waves, modulator, diffraction grating, optoelectronic device
Styles APA, Harvard, Vancouver, ISO, etc.
11

Lugli, Paolo, Fabio Compagnone, Aldo Di Carlo et Andrea Reale. « Simulation of Optoelectronic Devices ». VLSI Design 13, no 1-4 (1 janvier 2001) : 23–36. http://dx.doi.org/10.1155/2001/19585.

Texte intégral
Résumé :
In the spirit of reviewing various approaches to the modeling and simulation of optoelectronic devices, we discuss two specific examples, related respectively to Semiconductor Optical Amplifiers and to Quantum Cascade Lasers. In the former case, a tight-binding analysis is performed aimed at the optimization of the polarization independence of the device. Further, a rate-equation model is set up to describe the dynamics of gain recovery after optical pumping. A Monte Carlo simulation of a superlattice quantum cascade laser is then presented which provides an insight into the microscopic processes controlling the performance of this device.
Styles APA, Harvard, Vancouver, ISO, etc.
12

MILLER, D. A. B. « QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES ». International Journal of High Speed Electronics and Systems 01, no 01 (mars 1990) : 19–46. http://dx.doi.org/10.1142/s0129156490000034.

Texte intégral
Résumé :
Quantum well semiconductor structures allow small, fast, efficient optoelectronic devices such as optical modulators and switches. These are capable of logic themselves and have good potential for integration with electronic integrated circuits for parallel high speed interconnections. Devices can be made both in waveguides and two-dimensional parallel arrays. Working arrays of optical logic and memory devices have been demonstrated, to sizes as large as 2 048 elements, all externally accessible in parallel with free-space optics. This article gives an overview of the physics underlying the operation of such devices, and describes the principles of several of the device types, including self-electrooptic effect devices (SEEDs).
Styles APA, Harvard, Vancouver, ISO, etc.
13

Wu, Jieyun, Qing Li, Wen Wang et Kaixin Chen. « Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups ». Mini-Reviews in Organic Chemistry 16, no 3 (25 janvier 2019) : 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.

Texte intégral
Résumé :
Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrier transfer for optoelectronics. In this review, we summarize the recent progress of BDT-based conjugated polymers in optoelectronic devices. BDT-based conjugated materials are classified into onedimensional (1D) and two-dimensional (2D) BDT-based conjugated polymers. Firstly, we introduce the fundamental information of BDT-based conjugated materials and their application in optoelectronic devices. Secondly, the design and synthesis of alkyl, alkoxy and aryl-substituted BDT-based conjugated polymers are discussed, which enables the construction of one-dimensional and two-dimensional BDTbased conjugated system. In the third part, the structure modification, energy level tuning and morphology control and their influences on optoelectronic properties are discussed in detail to reveal the structure- property relationship. Overall, we hope this review can be a good reference for the molecular design of BDT-based semiconductor materials in optoelectronic devices.
Styles APA, Harvard, Vancouver, ISO, etc.
14

Ma, Qijie, Guanghui Ren, Arnan Mitchell et Jian Zhen Ou. « Recent advances on hybrid integration of 2D materials on integrated optics platforms ». Nanophotonics 9, no 8 (17 avril 2020) : 2191–214. http://dx.doi.org/10.1515/nanoph-2019-0565.

Texte intégral
Résumé :
AbstractThe burgeoning research into two-dimensional (2D) materials opens a door to novel photonic and optoelectronic devices utilizing their fascinating electronic and photonic properties in thin-layered architectures. The hybrid integration of 2D materials onto integrated optics platforms thus becomes a potential solution to tackle the bottlenecks of traditional optoelectronic devices. In this paper, we present the recent advances of hybrid integration of a wide range of 2D materials on integrated optics platforms for developing high-performance photodetectors, modulators, lasers, and nonlinear optics. Such hybrid integration enables fully functional on-chip devices to be readily accessible researchers and technology developers, becoming a potential candidate for next-generation photonics and optoelectronics industries.
Styles APA, Harvard, Vancouver, ISO, etc.
15

Li, Ziwei, Boyi Xu, Delang Liang et Anlian Pan. « Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials ». Research 2020 (29 août 2020) : 1–35. http://dx.doi.org/10.34133/2020/5464258.

Texte intégral
Résumé :
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
Styles APA, Harvard, Vancouver, ISO, etc.
16

Liu, Zhixiong, et Husam N. Alshareef. « MXenes for Optoelectronic Devices ». Advanced Electronic Materials 7, no 9 (8 juillet 2021) : 2100295. http://dx.doi.org/10.1002/aelm.202100295.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
17

Chuang, Shun Lien, Nasser Peyghambarian et Stephan Koch. « Physics of Optoelectronic Devices ». Physics Today 49, no 7 (juillet 1996) : 62. http://dx.doi.org/10.1063/1.2807693.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
18

Demming, Anna, Mark Brongersma et Dai Sik Kim. « Plasmonics in optoelectronic devices ». Nanotechnology 23, no 44 (18 octobre 2012) : 440201. http://dx.doi.org/10.1088/0957-4484/23/44/440201.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
19

Cai, Yuanjing, Anjun Qin et Ben Zhong Tang. « Siloles in optoelectronic devices ». Journal of Materials Chemistry C 5, no 30 (2017) : 7375–89. http://dx.doi.org/10.1039/c7tc02511d.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
20

Bouscher, Shlomi, Dmitry Panna et Alex Hayat. « Semiconductor–superconductor optoelectronic devices ». Journal of Optics 19, no 10 (20 septembre 2017) : 103003. http://dx.doi.org/10.1088/2040-8986/aa8888.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
21

Bhattacharya, Pallab, et Zetian Mi. « Quantum-Dot Optoelectronic Devices ». Proceedings of the IEEE 95, no 9 (septembre 2007) : 1723–40. http://dx.doi.org/10.1109/jproc.2007.900897.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
22

Goldstein, L. « Optoelectronic devices by GSMBE ». Journal of Crystal Growth 105, no 1-4 (octobre 1990) : 93–96. http://dx.doi.org/10.1016/0022-0248(90)90344-k.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
23

Liang, Zhiqiang, Jun Sun, Yueyue Jiang, Lin Jiang et Xiaodong Chen. « Plasmonic Enhanced Optoelectronic Devices ». Plasmonics 9, no 4 (14 février 2014) : 859–66. http://dx.doi.org/10.1007/s11468-014-9682-7.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
24

Star, Alexander, Yu Lu, Keith Bradley et George Grüner. « Nanotube Optoelectronic Memory Devices ». Nano Letters 4, no 9 (septembre 2004) : 1587–91. http://dx.doi.org/10.1021/nl049337f.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
25

Henini, M. « Physics of optoelectronic devices ». Microelectronics Journal 28, no 1 (janvier 1997) : 101–2. http://dx.doi.org/10.1016/s0026-2692(97)87853-6.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
26

Henini, Mohamed. « Optoelectronic materials and devices ». Microelectronics Journal 25, no 8 (novembre 1994) : 607–8. http://dx.doi.org/10.1016/0026-2692(94)90126-0.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
27

Ho, P. K. « All-Polymer Optoelectronic Devices ». Science 285, no 5425 (9 juillet 1999) : 233–36. http://dx.doi.org/10.1126/science.285.5425.233.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
28

Tomas, R. « Physics of optoelectronic devices ». Optics and Lasers in Engineering 26, no 1 (janvier 1997) : 72. http://dx.doi.org/10.1016/0143-8166(96)81156-0.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
29

Hövel, S., N. C. Gerhardt, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, H. Wende et W. Keune. « Spin-controlled optoelectronic devices ». physica status solidi (c) 6, no 2 (février 2009) : 436–39. http://dx.doi.org/10.1002/pssc.200880357.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
30

Wu, Zhiyong, Lu Zhu et Zhengji Xu. « Editorial for the Special Issue on Micro/Nano-Structure Based Optoelectronics and Photonics Devices ». Micromachines 14, no 10 (29 septembre 2023) : 1867. http://dx.doi.org/10.3390/mi14101867.

Texte intégral
Résumé :
In the ever-evolving fields of optoelectronics and photonics, the introduction of carefully designed micro-/nanostructures enables personalized customization of the electrical and optical properties of optoelectronic and photonic devices [...]
Styles APA, Harvard, Vancouver, ISO, etc.
31

Shan, Xuanyu, Chenyi Zhao, Ya Lin, Jilin Liu, Xiaohan Zhang, Ye Tao, Chunliang Wang et al. « Optoelectronic synaptic device based on ZnO/HfOx heterojunction for high-performance neuromorphic vision system ». Applied Physics Letters 121, no 26 (26 décembre 2022) : 263501. http://dx.doi.org/10.1063/5.0129642.

Texte intégral
Résumé :
Optoelectronic synapses are considered to be important cornerstones in the construction of neuromorphic computing systems because of their low power consumption, high operating speeds, and high scalability. In this work, we demonstrate an optoelectronic synaptic device based on a ZnO/HfOx heterojunction in which optical potentiation/electrical depression behaviors and nonvolatile high current state can be implemented. The heterojunction device exhibits conductance evolution with high linearity. The excellent optoelectronic memristive behavior of the device can be attributed to the interface barrier between ZnO and HfOx, which hinders the recombination of photo-excited electron–hole pairs to increase the carrier lifetime, and realizes the nonvolatile high current state. More importantly, the artificial vision system based on optoelectronic synaptic devices can achieved a high recognition accuracy of 96.1%. Our work provides a feasible pathway toward the development of optoelectronic synaptic devices for use in high-performance neuromorphic vision systems.
Styles APA, Harvard, Vancouver, ISO, etc.
32

Zhuo, Linqing, Dongquan Li, Weidong Chen, Yu Zhang, Wang Zhang, Ziqi Lin, Huadan Zheng et al. « High performance multifunction-in-one optoelectronic device by integrating graphene/MoS2 heterostructures on side-polished fiber ». Nanophotonics 11, no 6 (2 février 2022) : 1137–47. http://dx.doi.org/10.1515/nanoph-2021-0688.

Texte intégral
Résumé :
Abstract Two-dimensional (2D) materials exhibit fascinating and outstanding optoelectronic properties, laying the foundation for the development of novel optoelectronic devices. However, ultra-weak light absorption of 2D materials limits the performance of the optoelectronic devices. Here, a structure of MoS2/graphene/Au integrated onto the side-polished fiber (SPF) is proposed to achieve a high-performance fiber-integrated multifunction-in-one optoelectronic device. It is found that the device can absorb the transverse magnetic (TM) mode guided in the SPF and generate photocurrents as a polarization-sensitive photodetector, while the transverse electric (TE) mode passes with low loss through the device, making the device simultaneously a polarizer. In the device, the MoS2 film and the Au finger electrode can enhance the TM absorption by 1.75 times and 24.8 times, respectively, thus allowing to achieve high performance: a high photoresponsivity of 2.2 × 105 A/W at 1550 nm; the external quantum efficiency (EQE) of 1.76 × 107%; a high photocurrent polarization ratio of 0.686 and a polarization efficiency of 3.9 dB/mm at C-band. The integration of 2D materials on SPF paves the way to enhance the light–2D material interaction and achieve high performance multifunction-in-one fiber-integrated optoelectronic devices.
Styles APA, Harvard, Vancouver, ISO, etc.
33

Gorham, D. « Amorphous and microcrystalline semiconductor devices : Optoelectronic devices ». Microelectronics Journal 24, no 7 (novembre 1993) : 733. http://dx.doi.org/10.1016/0026-2692(93)90016-8.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
34

Tang, Hongyu, et Giulia Tagliabue. « Tunable photoconductive devices based on graphene/WSe2 heterostructures ». EPJ Web of Conferences 266 (2022) : 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

Texte intégral
Résumé :
Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was observed in the graphene/WSe2 heterostructures. The tunable photoconductive behaviors provide promising potential applications of van der Waals heterostructures in optoelectronics. This work has guiding significance for the realization of stacking engineering in van der Waals heterostructures.
Styles APA, Harvard, Vancouver, ISO, etc.
35

Sakurai, Makoto, Ke Wei Liu, Romain Ceolato et Masakazu Aono. « Optical Properties of ZnO Nanowires Decorated with Au Nanoparticles ». Key Engineering Materials 547 (avril 2013) : 7–10. http://dx.doi.org/10.4028/www.scientific.net/kem.547.7.

Texte intégral
Résumé :
One of the key technologies in future optoelectronics is control of excitons in oxide materials by the coupling with plasmons on noble metal surfaces. Optical properties of ZnO nanowires decorated with Au nanoparticles were studied to understand fundamental mechanism of the coupling and to develop optoelectronic devices with new functionalities. Light intensity at the main peak position in the photoluminescence (PL) spectra of ZnO nanowires was enhanced with the coverage of Au nanoparticles. Lifetime of excitons excited optically decreased by the decoration of Au nanoparticles. Understanding of the coupling between excitons and plasmons leads to optical control of excitons and will pave the way for new type of optoelectronic devices.
Styles APA, Harvard, Vancouver, ISO, etc.
36

ابراهيم السنوسي نصر و احمد ابوسيف عبد الرحمن. « Interactive Learning Material for Optoelectronic Devices using MATLAB-based GUI ». Journal of Pure & ; Applied Sciences 19, no 2 (18 novembre 2020) : 141–47. http://dx.doi.org/10.51984/jopas.v19i2.878.

Texte intégral
Résumé :
Optoelectronic devices have been a difficult subject to grasp for many university students who undertake electronic engineering. Many students find it difficult to understand the operation principle of the optoelectronic devices, for instance, how a solar cell device converts solar energy into electric energy or electricity, or the difference between types of semiconductor devices in terms of interaction between photons and electrons. Thus, the purpose of this paper is to design and implement an interactive and animated software package to aid students in understanding the concepts of the following optoelectronic devices: solar cell, p-n junction photodiode, p-i-n photodiode, light emitting diode and semiconductor laser. The software package was designed to be user friendly and easy to use requiring minimum learning time. The implementation of the software package was achieved using the MATLAB program which is an interactive software package for scientific and engineering numeric computation. The outcome is a series of MATLAB programs that can be used to help students learn the concepts of optoelectronic devices.
Styles APA, Harvard, Vancouver, ISO, etc.
37

Parkhomenko, Hryhorii P., Erik O. Shalenov, Zarina Umatova, Karlygash N. Dzhumagulova et Askhat N. Jumabekov. « Fabrication of Flexible Quasi-Interdigitated Back-Contact Perovskite Solar Cells ». Energies 15, no 9 (21 avril 2022) : 3056. http://dx.doi.org/10.3390/en15093056.

Texte intégral
Résumé :
Perovskites are a promising class of semiconductor materials, which are being studied intensively for their applications in emerging new flexible optoelectronic devices. In this paper, device manufacturing and characterization of quasi-interdigitated back-contact perovskite solar cells fabricated on flexible substrates are studied. The photovoltaic parameters of the prepared flexible quasi-interdigitated back-contact perovskite solar cells (FQIBC PSCs) are obtained for the front- and rear-side illumination options. The dependences of the device’s open-circuit potential and short-circuit current on the illumination intensity are investigated to determine the main recombination pathways in the devices. Spectral response analysis of the devices demonstrates that the optical transmission losses can be minimized when FQIBC PSCs are illuminated from the front-side. Optoelectronic simulations are used to rationalize the experimental results. It is determined that the obtained FQIBC PSCs have high surface recombination losses, which hinder the device performance. The findings demonstrate a process for the fabrication of flexible back-contact PSCs and provide some directions for device performance improvements.
Styles APA, Harvard, Vancouver, ISO, etc.
38

Niu, Pingjuan, Li Pei, Yunhui Mei, Hua Bai et Jia Shi. « Optoelectronic Materials, Devices, and Applications ». Applied Sciences 13, no 13 (25 juin 2023) : 7514. http://dx.doi.org/10.3390/app13137514.

Texte intégral
Résumé :
This Special Issue entitled “Optoelectronic Materials, Devices, and Applications” is devoted to gathering a broad array of research papers on the latest advances in the development of optoelectronic materials and devices of semiconductors, fiber optics, power electronics, microwaves, and terahertz [...]
Styles APA, Harvard, Vancouver, ISO, etc.
39

Heydari Gharahcheshmeh, Meysam, et Karen K. Gleason. « Recent Progress in Conjugated Conducting and Semiconducting Polymers for Energy Devices ». Energies 15, no 10 (17 mai 2022) : 3661. http://dx.doi.org/10.3390/en15103661.

Texte intégral
Résumé :
Advanced conductors (such as conducting and semiconducting polymers) are vital building blocks for modern technologies and biocompatible devices as faster computing and smaller device sizes are demanded. Conjugated conducting and semiconducting polymers (including poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), polythiophene (PTh), and polypyrrole (PPy)) provide the mechanical flexibility required for the next generation of energy and electronic devices. Electrical conductivity, ionic conductivity, and optoelectronic characteristics of advanced conductors are governed by their texture and constituent nanostructures. Thus, precise textural and nanostructural engineering of advanced conjugated conducting and semiconducting polymers provide an outstanding pathway to facilitate their adoption in various technological applications, including but not limited to energy storage and harvesting devices, flexible optoelectronics, bio-functional materials, and wearable electronics. This review article focuses on the basic interconnection among the nanostructure and the characteristics of conjugated conducting and semiconducting polymers. In addition, the application of conjugated conducting and semiconducting polymers in flexible energy devices and the resulting state-of-the-art device performance will be covered.
Styles APA, Harvard, Vancouver, ISO, etc.
40

Wada, Osamu. « Progress in Femtosecond Optoelectronic Devices ». Review of Laser Engineering 28, Supplement (2000) : 168–69. http://dx.doi.org/10.2184/lsj.28.supplement_168.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
41

Houlihan, Francis, Madan Kunnavakham, Alex Liddle, Peter Mirau, Om Nalamasu et John Rogers. « Microlens Arrays for Optoelectronic Devices. » Journal of Photopolymer Science and Technology 15, no 3 (2002) : 497–515. http://dx.doi.org/10.2494/photopolymer.15.497.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
42

Esfandyarpour, Majid, Erik C. Garnett, Yi Cui, Michael D. McGehee et Mark L. Brongersma. « Metamaterial mirrors in optoelectronic devices ». Nature Nanotechnology 9, no 7 (22 juin 2014) : 542–47. http://dx.doi.org/10.1038/nnano.2014.117.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
43

Adams, A. R., D. J. Dunstan et E. P. O'Reilly. « Strained Layers for Optoelectronic Devices ». Physica Scripta T39 (1 janvier 1991) : 196–203. http://dx.doi.org/10.1088/0031-8949/1991/t39/030.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
44

ZHU, Ninghua, Yue HAO et Ming LI. « Optoelectronic devices and integration technologies ». SCIENTIA SINICA Informationis 46, no 8 (1 août 2016) : 1156–74. http://dx.doi.org/10.1360/n112016-00059.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
45

Yin, Lei, Xiaodong Pi et Deren Yang. « Silicon-based optoelectronic synaptic devices ». Chinese Physics B 29, no 7 (juillet 2020) : 070703. http://dx.doi.org/10.1088/1674-1056/ab973f.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
46

Dong, He, Chenxin Ran, Weiyin Gao, Mingjie Li, Yingdong Xia et Wei Huang. « Metal Halide Perovskite for next-generation optoelectronics : progresses and prospects ». eLight 3, no 1 (4 janvier 2023). http://dx.doi.org/10.1186/s43593-022-00033-z.

Texte intégral
Résumé :
AbstractMetal halide perovskites (MHPs), emerging as innovative and promising semiconductor materials with prominent optoelectronic properties, has been pioneering a new era of light management (ranging from emission, absorption, modulation, to transmission) for next-generation optoelectronic technology. Notably, the exploration of fundamental characteristics of MHPs and their devices is the main research theme during the past decade, while in the next decade, it will be primarily critical to promote their implantation in the next-generation optoelectronics. In this review, we first retrospect the historical research milestones of MHPs and their optoelectronic devices. Thereafter, we introduce the origin of the unique optoelectronic features of MHPs, based on which we highlight the tunability of these features via regulating the phase, dimensionality, composition, and geometry of MHPs. Then, we show that owing to the convenient property control of MHPs, various optoelectronic devices with target performance can be designed. At last, we emphasize on the revolutionary applications of MHPs-based devices on the existing optoelectronic systems. This review demonstrates the key role of MHPs played in the development of modern optoelectronics, which is expected to inspire the novel research directions of MHPs and promote the widespread applications of MHPs in the next-generation optoelectronics.
Styles APA, Harvard, Vancouver, ISO, etc.
47

Liu, Jingjing, Junle Qu, Thomas Kirchartz et Jun Song. « Optoelectronic devices based on the integration of halide perovskites with silicon-based materials ». Journal of Materials Chemistry A, 2021. http://dx.doi.org/10.1039/d1ta04527j.

Texte intégral
Résumé :
Controlling the preparation of perovskite materials on the Si optoelectronics platform is a crucial step to realize perovskite-based optoelectronic devices. This review highlights the recent progress and remaining challenges in Si-based perovskite optoelectronic devices.
Styles APA, Harvard, Vancouver, ISO, etc.
48

Song, Haizeng, Shuai Chen, Xueqian Sun, Yichun Cui, Tanju Yildirim, Jian Kang, Shunshun Yang, Fan Yang, Yuerui Lu et Linglong Zhang. « Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures ». Advanced Science, 21 juin 2024. http://dx.doi.org/10.1002/advs.202403176.

Texte intégral
Résumé :
AbstractBy modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high‐performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light‐matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
Styles APA, Harvard, Vancouver, ISO, etc.
49

Chang, Hongliang, Yanqing Jia, Tae‐Yong Park, Xu Zhang, Qiaoqiang Gan, Zhenqiang Ma, Tien Khee Ng et Boon S. Ooi. « Semiconductor Membrane Exfoliation : Technology and Application ». Advanced Electronic Materials, 29 avril 2024. http://dx.doi.org/10.1002/aelm.202300832.

Texte intégral
Résumé :
AbstractFlexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications. It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. Instead, they are typically fabricated on conventional rigid thick semiconductor substrates. Consequently, the exfoliation and transfer of epitaxial semiconductor thin film structures onto substrates constitute pivotal steps in the production of flexible optoelectronic devices. The integration of hard inorganic semiconductor materials with flexible substrates offers a solution to the limitations of rigidity and brittleness associated with conventional optoelectronic devices and can be used to address challenges from design to manufacturing. This review provides a comprehensive overview of the working principles and recent advances of various techniques aimed at achieving the membrane exfoliation and transfer of semiconductor structures on conventional rigid substrates. It also reviews the possible applications of the transferred membrane in a variety of optoelectronic devices. Finally, it offers insights into the potential of high‐end semiconductor manufacturing and flexible semiconductor devices to play a critical role in advancing next‐generation optoelectronics technologies.
Styles APA, Harvard, Vancouver, ISO, etc.
50

Naimanboyev, R., M. Tokhirov et M. Sobirov. « OPTOELECTRONIC AMPLIFIER REGULATORS FOR AFS-FILM ». ΛΌГOΣ МИСТЕЦТВО НАУКОВОЇ ДУМКИ, 10 décembre 2019. http://dx.doi.org/10.36074/2663-4139.04.06.

Texte intégral
Résumé :
The paper discusses the practical application of AFS films to systems of optoelectronic amplifiers. In particular optoelectronic devices controlled by AFS film. Optoelectronic device controlled AFS film. Optoelectronic amplifier with LED input. Optoelectronic automatic control device. Optoelectronic circuit phase angle control.
Styles APA, Harvard, Vancouver, ISO, etc.
Vous pouvez également être intéressé par les bibliographies sur le sujet « Optoelectronic devices » pour d’autres types de sources :
Thèses Livres
Nous offrons des réductions sur tous les plans premium pour les auteurs dont les œuvres sont incluses dans des sélections littéraires thématiques. Contactez-nous pour obtenir un code promo unique!

Vers la bibliographie