Littérature scientifique sur le sujet « RF power amplifier »

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Articles de revues sur le sujet "RF power amplifier"

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Elkhaldi, Said, Moustapha El Bakkali, Naima Amar Touhami, Taj-eddin Elhamadi, and Hmamou Abdelmounim. "Linearization, EM Simulation, and Realization of a 40 DBM Class-AB Gan Power Amplifier." International Journal of Electrical and Electronics Research 12, no. 4 (2024): 1418–26. https://doi.org/10.37391/ijeer.120436.

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This research article presents the comprehensive design and analysis of a 2.45 GHz RF power amplifier operating at 40 dBm using GaN technology. The amplifier is built around the CGH40010F transistor and employs a Linearization with Nonlinear Components Method (LINC) for enhanced linearity. The study outlines the design methodology, including the selection of the CGH40010F transistor and the application of the LINC technique. It investigates the amplifier's performance characteristics, including power output, linearity, and efficiency at the 2.45 GHz frequency. The findings reveal a robust Clas
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Yue, Kai, and Xu Biao Ma. "An Adjustable Linearization for RF Power Amplifier." Applied Mechanics and Materials 241-244 (December 2012): 703–8. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.703.

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This paper presented an adjustable analog predistortion linearization method for RF power amplifier. The linearization includes an attenuator, a phase shifter and an anti-parallel Schottky diode pair with DC bias, through adjusting these components, we can adjust predistortion characteristic of the linearization to be complementary to distortion characteristic of RF power amplifier. By cascading this linearization with power amplifier, we can improve linearity of amplifier. Firstly, we simulated the proposed predistortion linearization with software ADS, then the linearization was manufactured
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Memioglu, O., O. Kazan, A. Karakuzulu, et al. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of p
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Gangadharan, Shaina, Ruqaiya Khanam, and Veeraiyah Thangasamy. "A Study of RF Power Amplifiers for 5G and Future Generation Mobile Communication: Can FinFET Replace CMOS?" International Journal of Experimental Research and Review 46 (December 30, 2024): 222–39. https://doi.org/10.52756/ijerr.2024.v46.018.

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A low-power strategy that can manage analogue, digital, and RF functionalities on a similar chip is crucial for wireless systems. Various difficulties restrict the widespread adoption of CMOS power amplifiers despite the fact that they provide highly integrated, low-cost wireless communication. Some of the main issues with CMOS power amplifiers include non-linearity, low breakdown voltage, a lack of high-voltage capacitors, and incorrect RF models. The RF signal is amplified without distortions using a linear power amplifier (LPA), which is less effective whenever driven by constant voltage. I
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Lee, Tze Kiu, Wing Shing Chan, and T. Y. M. Siu. "Power amplifier/low noise amplifier RF switch." Electronics Letters 36, no. 24 (2000): 1983. http://dx.doi.org/10.1049/el:20001404.

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Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,
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Park, Min-Sang, Gwon-Seok Sun, and Jin-Young Kim. "A Study on the Automatic Calibration Function of RF Amplifiers Using Artificial Neural Networks." Korea Industrial Technology Convergence Society 28, no. 2 (2023): 41–49. http://dx.doi.org/10.29279/jitr.2023.28.2.41.

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In this study, power amplifiers are designed and manufactured based on the frequency specifications by customers. After learning appropriate compensation values according to the function and performance degradation factors of the manufactured power amplifier using an artificial neural network, the power amplifier itself can maintain an optimal performance when its function and performance degrade. The artificial neural networks are applied to power amplifiers using the STM32F series of microcontrollers, which are being widely used for industrial purposes in recent years. Hence, after manufactu
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Babu, Ambily, Bangalore Gangadharaiah Shivaleelavathi, and Veeramma Yatnalli. "Comparative efficiency analysis of RF power amplifiers with fixed bias and envelope tracking bias." Indonesian Journal of Electrical Engineering and Computer Science 36, no. 2 (2024): 808. http://dx.doi.org/10.11591/ijeecs.v36.i2.pp808-816.

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RF power amplifier (RF PA) finds its application in almost all the areas of electronics, mobile communication being identified as a major area. The paper performs a comparative efficiency analysis of RF power amplifiers operating with a fixed bias and an envelope tracking bias. Simulations are performed using Keysight advanced design system (ADS) tool. A class a RF PA operating at a 12 dB gain is fixed for the work. 16 QAM LTE signal operating at 5 MHz input frequency, with a peak to average power ratio (PAPR) of 6.0 dB is used as input signal. An envelope simulation at 2.5 GHz is performed on
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Ambily, Babu Bangalore Gangadharaiah Shivaleelavathi Veeramma Yatnalli. "Comparative efficiency analysis of RF power amplifiers with fixed bias and envelope tracking bias." Indonesian Journal of Electrical Engineering and Computer Science 36, no. 2 (2024): 808–16. https://doi.org/10.11591/ijeecs.v36.i2.pp808-816.

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RF power amplifier (RF PA) finds its application in almost all the areas of electronics, mobile communication being identified as a major area. The paper performs a comparative efficiency analysis of RF power amplifiers operating with a fixed bias and an envelope tracking bias. Simulations are performed using Keysight advanced design system (ADS) tool. A class a RF PA operating at a 12 dB gain is fixed for the work. 16 QAM LTE signal operating at 5 MHz input frequency, with a peak to average power ratio (PAPR) of 6.0 dB is used as input signal. An envelope simulation at 2.5 GHz is performed on
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Qin, Wei, Yong Tao Li, Ying Jie Li, and Xiao Ping Xu. "High Efficiency 500W RF Generator." Advanced Materials Research 383-390 (November 2011): 1333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1333.

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In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measu
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Thèses sur le sujet "RF power amplifier"

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Lotter, Paul. "Development of feedforward RF power amplifier." Thesis, Cape Peninsula University of Technology, 2006. http://hdl.handle.net/20.500.11838/2206.

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Thesis (MTech(Electrical Engineering))--Cape Peninsula University of Technology, 2006.<br>Electronic communication systems have become an integral part of our everyday lives. RF (Radio Frequency) power amplifiers form part of the fundamental building blocks of an electronic communication system. RF power amplifiers can also be one of the major causes of distortion in an electronic communication system. This thesis describes the linearity requirement for a RF power amplifier that is used in a transmitter section of an electronic communication system. Furthermore, five different linearisat
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Akhtar, Siraj. "Modeling of RF power transistors for power amplifier design /." The Ohio State University, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=osu1488196781733682.

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Boo, Hyun Ho. "New architecture for RF power amplifier linearization." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/46605.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.<br>Includes bibliographical references (p. 51-55).<br>Power amplifier linearization has become an important part of the transmitter system as 3G and developing 4G communication standards require higher linearity than ever before. The thesis proposes two power amplifier linearization solutions : two-point architecture and adaptive digital predistortion using a [delta sigma] modulator for automatic inversion of power amplifier nonlinearity. Two-point architecture can be seen as a sol
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Rahkola, A. (Antti). "RF Pre-power Amplifier for LTE SoC." Master's thesis, University of Oulu, 2018. http://urn.fi/URN:NBN:fi:oulu-201806052447.

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This work focused on evaluating a single-ended complementary push-pull topology for LTE system-on-chip RF pre-power amplifier, to increase power efficiency compared to an existing class-A amplifier. Suitability of the push-pull topology was studied against strict linearity specification. Frequency range in this study was 1710–2020 MHz, and 10 dBm sine wave output power was targeted. Common source and source follower amplifier variants were designed and simulated in a schematic level. Gain control functionality was implemented by dividing the amplifier into controllable partitions. Output DC-vo
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Morris, Kevin Andrew. "RF power amplifier linearisation using predistortion techniques." Thesis, University of Bristol, 2000. http://hdl.handle.net/1983/02819fd3-4c63-41b7-b7b3-df70c1e4ba85.

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Neslen, Cody R. "Negative Conductance Load Modulation RF Power Amplifier." DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/312.

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The number of mobile wireless devices on the market has increased substantially over the last decade. The frequency spectrum has become crowded due to the number of devices demanding radio traffic and new modulation schemes have been developed to accommodate the number of users. These new modulation schemes have caused very poor efficiencies in power amplifiers for wireless transmission systems due to high peak-to-average power ratios (PAPR). This thesis first presents the issue with classical power amplifiers in modern modulation systems. A brief overview of current attempts to mitigate this
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Yusoff, Zubaida. "The auxiliary envelope tracking RF power amplifier system." Thesis, Cardiff University, 2012. http://orca.cf.ac.uk/31368/.

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The advancement of the mobile communication industry increases the need for RF power amplifier (RFPA) to be more efficient and linear. The communication network that is shifting towards smaller micro-cell or nano-cell network has also motivated the design of the RF power amplifier to be simple, compact and cost efficient. In this research work, a novel technique for efficiency and linearity improvement of the RFPA is presented. A simplistic approach in the technique called ‘Auxiliary Envelope Tracking' (AET) system has promoted the design for small and straightforward AET tracking generator, a
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Torres, Chico Gabriel. "RF power amplifier linearity compensation for MRI systems." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62751.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 45-46).<br>In this thesis, a polar-feedback linearization system for use with MRI RF power amplifiers was designed and simulated. The design here presented is intended to replace Analogic's (located in Peabody, Massachusetts) feed-forward, digital linearization scheme. This involved the selection and testing of components meeting the stringent specifications required for a high enough level of fi
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Gebremicael, Kibrom Negash. "Compressive sensing based multiband RF power amplifier linearisation." Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730827.

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Guimarães, Gabriel Teófilo Neves. "CMOS linear RF power amplifier with fully integrated power combining transformer." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/169084.

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Este trabalho apresenta o projeto de um amplificador de potência (PA) de rádio-frequência (RF) linear em tecnologia complementar metal-oxido silício (CMOS). Nele são analisados os desafios encontrados no projeto de PAs CMOS assim como soluções encontradas no estado-da-arte. Um destes desafios apresentados pela tecnologia é a baixa tensão de alimentação e passivos com alta perda, o que limita a potência de saída e a eficiência possível de ser atingida com métodos tradicionais de projeto de PA e suas redes de transformação de impedância. Este problema é solucionado através do uso de redes de com
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Livres sur le sujet "RF power amplifier"

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Schreurs, Dominique, Mairtin ODroma, Anthony A. Goacher, and Michael Gadringer, eds. RF Power Amplifier Behavioral Modeling. Cambridge University Press, 2008. http://dx.doi.org/10.1017/cbo9780511619960.

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Schreurs, Dominique. RF power amplifier behavioral modeling. Cambridge University Press, 2008.

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Schreurs, Dominique. RF power amplifier behavioral modeling. Cambridge University Press, 2008.

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Design, RF, ed. Power amplifier handbook: A collection from RF Design. RF Design, 1991.

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Ghannouchi, Fadhel M. Load-Pull Techniques with Applications to Power Amplifier Design. Springer Netherlands, 2013.

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J, Achatz Robert, Luo Ye, and United States. National Telecommunications and Information Administration, eds. Nonlinear operation of a MMIC RF power amplifier and its effects on battery current, interference, and link margin. U.S. Dept. of Commerce, National Telecommunications and Information Administration, 2000.

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1954-, Ford Steve, and American Radio Relay League, eds. ARRL's RF amplifier classics: Practical design and construction details from the pages of QST and QEX. ARRL, 2004.

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Kazimierczuk, Marian K. RF Power Amplifiers. John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118844373.

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O, Sokal Nathan, ed. Switchmode RF power amplifiers. Elsevier/Newnes, 2007.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. Linear CMOS RF Power Amplifiers. Springer US, 2014. http://dx.doi.org/10.1007/978-1-4614-8657-2.

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Chapitres de livres sur le sujet "RF power amplifier"

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Design." In Linear CMOS RF Power Amplifiers. Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_6.

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Shirvani, Alireza, and Bruce A. Wooley. "RF Power Amplifier Specifications." In Design and Control of RF Power Amplifiers. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3754-7_3.

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Shirvani, Alireza, and Bruce A. Wooley. "RF Power Amplifier Classifications." In Design and Control of RF Power Amplifiers. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3754-7_4.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Fundamentals: Metrics." In Linear CMOS RF Power Amplifiers. Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_2.

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Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Fundamentals: Classes." In Linear CMOS RF Power Amplifiers. Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_3.

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Yuan, Jiann-Shiun. "Power Amplifier Reliability." In CMOS RF Circuit Design for Reliability and Variability. Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0884-9_4.

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Erlbacher, Tobias. "Power Electronic and RF Amplifier Circuits." In Power Systems. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-00500-3_3.

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Chen, Wenhua, Karun Rawat, and Fadhel M. Ghannouchi. "Multiband Power Amplifier Design." In Multiband RF Circuits and Techniques for Wireless Transmitters. Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-50440-6_5.

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Aluf, Ofer. "Power Amplifier (PA) System Stability Analysis." In Microwave RF Antennas and Circuits. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45427-6_5.

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Mohammadi, Abbas, and Fadhel M. Ghannouchi. "RF Power Amplifier and Linearization Techniques." In RF Transceiver Design for MIMO Wireless Communications. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27635-4_5.

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Actes de conférences sur le sujet "RF power amplifier"

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Zhou, Lichao, Wei Nie, Xiaolong He, and Mu Zhou. "Analysis of RF Fingerprint of Power Amplifier." In 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2024. http://dx.doi.org/10.1109/icmmt61774.2024.10672012.

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Li, Wang, Shen Xiaobo, Shu Renyi, Zheng Xiaodong, Wang Jian, and Shen Yiming. "Optimal Design of RF Signal Power Amplifier Circuit." In 2024 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC). IEEE, 2024. https://doi.org/10.1109/csrswtc64338.2024.10811633.

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Juschke, P., D. Wiegner, G. Luz, R. Machinal, A. Pascht, and R. Quay. "Multiband Doherty RF power amplifier." In AFRICON 2011. IEEE, 2011. http://dx.doi.org/10.1109/afrcon.2011.6072119.

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Darbandi, A. "130 W C-band pulsed power amplifier." In IEE Seminar Microwave and RF Power Amplifiers. IEE, 2000. http://dx.doi.org/10.1049/ic:20000660.

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Virdee, A. S. "Amplifier design for high efficiency performance." In IEE Seminar Microwave and RF Power Amplifiers. IEE, 2000. http://dx.doi.org/10.1049/ic:20000662.

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Tang, Xiaoying, Xinfen Hu, Zhiling Dai, Tianxiang Zhang, and Weifeng Liu. "RF Power Amplifier of NMR System." In 2009 3rd International Conference on Bioinformatics and Biomedical Engineering (iCBBE). IEEE, 2009. http://dx.doi.org/10.1109/icbbe.2009.5163353.

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"D4. Dynamic Supply RF Power Amplifier." In 2013 30th National Radio Science Conference (NRSC). IEEE, 2013. http://dx.doi.org/10.1109/nrsc.2013.6587948.

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Baba, Sebastian, Marek Jasinski, and Marcin Zelechowski. "Temperature Measurement of RF Power Amplifier." In 2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC). IEEE, 2021. http://dx.doi.org/10.1109/pemc48073.2021.9432633.

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Li, Yuepei, Yuan Ding, George Goussetis, and Junqing Zhang. "Power Amplifier enabled RF Fingerprint Identification." In 2021 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS). IEEE, 2021. http://dx.doi.org/10.1109/wmcs52222.2021.9493272.

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O'Droma, M., E. Bertran, J. Portilla, S. Donati, T. J. Brazil, and G. Magerl. "On RF transmitter power amplifier linearisation." In IET Seminar on High Efficiency Power Amplifier Design for Next Generation Wireless Applications. IEE, 2006. http://dx.doi.org/10.1049/ic:20060005.

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Rapports d'organisations sur le sujet "RF power amplifier"

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Meth, M., and M. Plotkin. PRELIMINARY DESIGN OF RF POWER AMPLIFIER FOR UPGRADED AGS. Office of Scientific and Technical Information (OSTI), 1988. http://dx.doi.org/10.2172/1150504.

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Meth, M. UPGRADE OF BOOSTER RF POWER AMPLIFIER FOR PROTON CAVITY. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/1151322.

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Meth, M., and A. Ratti. Specifications and design of RF power amplifier for proton cavity. Office of Scientific and Technical Information (OSTI), 1987. http://dx.doi.org/10.2172/1150473.

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Meth, M. Stability of screen and grid power supplies for the RF power amplifier for proton cavity. Office of Scientific and Technical Information (OSTI), 1987. http://dx.doi.org/10.2172/1150481.

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Rutledge, David. High-Efficiency, Class-E RF Power Amplifiers. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada393787.

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Rose, M. F., L. C. Chow, and J. H. Johnson. Thermal management of space-based, high-power solid-state RF amplifiers. Final report. Office of Scientific and Technical Information (OSTI), 1990. http://dx.doi.org/10.2172/376392.

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