Littérature scientifique sur le sujet « RF Pulse Compressor »
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Articles de revues sur le sujet "RF Pulse Compressor"
Shu, Guan, Feng-Li Zhao, Shi-Lun Pei et Ou-Zheng Xiao. « RF modulation studies on an S band pulse compressor ». Chinese Physics C 40, no 3 (mars 2016) : 037002. http://dx.doi.org/10.1088/1674-1137/40/3/037002.
Texte intégralLi, Zongbin, Wencheng Fang, Qiang Gu et Zhentang Zhao. « RF design of a C-band compact spherical RF pulse compressor for SXFEL ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 863 (août 2017) : 7–14. http://dx.doi.org/10.1016/j.nima.2017.05.017.
Texte intégralKarsli, Ozlem, Avni Aksoy, Caglar Kaya, Burak Koc, Mustafa Dogan, O. Faruk Elcim et Mehmet Bozdogan. « High power RF operations studies at TARLA facility ». Canadian Journal of Physics 97, no 11 (novembre 2019) : 1171–76. http://dx.doi.org/10.1139/cjp-2018-0778.
Texte intégralShu, Guan, Feng-Li Zhao et Xiang He. « RF study of a C-band barrel open cavity pulse compressor ». Chinese Physics C 39, no 5 (mai 2015) : 057005. http://dx.doi.org/10.1088/1674-1137/39/5/057005.
Texte intégralFernandes, P., R. Parodi, C. Salvo et B. Spataro. « The design of TE storage cavities for a rf pulse compressor system ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 288, no 2-3 (mars 1990) : 549–54. http://dx.doi.org/10.1016/0168-9002(90)90151-u.
Texte intégralGolubičić, Zoran, Slobodan Simić et Aleksa J. Zejak. « Design and EPGA Implementation of Digital Pulse Compression for Band–Pass Radar Signals ». Journal of Electrical Engineering 64, no 3 (1 mai 2013) : 191–95. http://dx.doi.org/10.2478/jee-2013-0028.
Texte intégralVAN DER GEER, S. B., O. J. LUITEN et M. J. DE LOOS. « DESIGN OF A 2 kA, 30 fs RF-PHOTOINJECTOR FOR WATERBAG COMPRESSION ». International Journal of Modern Physics A 22, no 22 (10 septembre 2007) : 4000–4005. http://dx.doi.org/10.1142/s0217751x07037573.
Texte intégralZhang, Jingru, Cai Meng, Dazhang Li, Dou Wang, Guoxi Pei, Hua Shi, Jie Gao, Xiang He, Xiaoping Li et Yunlong Chi. « R&D of CEPC injector linac ». International Journal of Modern Physics A 36, no 22 (5 août 2021) : 2142013. http://dx.doi.org/10.1142/s0217751x21420136.
Texte intégralKrainara, Siriwan, Shuya Chatani, Heishun Zen, Toshiteru Kii et Hideaki Ohgaki. « Manipulation of Laser Distribution to Mitigate the Space-Charge Effect for Improving the Performance of a THz Coherent Undulator Radiation Source ». Particles 1, no 1 (7 novembre 2018) : 238–52. http://dx.doi.org/10.3390/particles1010018.
Texte intégralJunphong, P., V. Ano, B. Lekprasert, D. Suwannakachorn, Thiraphat Vilaithong et H. Wiedemann. « Bunch Compression of a Non-Relativistic 280-keV-He+ Beam ». Solid State Phenomena 107 (octobre 2005) : 59–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.59.
Texte intégralThèses sur le sujet "RF Pulse Compressor"
Chatelain, Robert P. 1982. « RF compression of electron bunches applied to ultrafast electron diffraction ». Thesis, McGill University, 2008. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=111943.
Texte intégralCosta, Rui Jorge Duarte. « Face detection and recognision ». Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/21683.
Texte intégralUltimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas de transferência de informação. Com este aumento, embora sejam usados códigos poderosos, também aumenta a largura de banda dos sinais a transmitir, bem como a sua frequência. A maior frequência de operação, bem como a procura por sistemas mais eficientes, tem exigido progressos no que toca aos transístores utilizados nos amplificadores de potência de radio frequência (RF), uma vez que estes são componentes dominantes no rendimento de uma estação base de telecomunicações. Com esta evolução, surgem novas tecnologias de transístores, como os GaN HEMT (do inglês, Gallium Nitride High Electron Mobility Transistor). Para conseguir prever e corrigir certos efeitos dispersivos que afetam estas novas tecnologias e para obter o amplificador mais eficiente para cada transístor usado, os projetistas de amplificadores necessitam cada vez mais de um modelo que reproduza fielmente o comportamento do dispositivo. Durante este trabalho foi desenvolvido um sistema capaz de efetuar medidas pulsadas e de elevada exatidão a transístores, para que estes não sejam afetados, durante as medidas, por fenómenos de sobreaquecimento ou outro tipo de fenómenos dispersivos mais complexos presentes em algumas tecnologias. Desta forma, será possível caracterizar estes transístores para um estado pré determinado não só de temperatura, mas de todos os fenómenos presentes. Ao longo do trabalho vai ser demostrado o projeto e a construção deste sistema, incluindo a parte de potência que será o principal foco do trabalho. Foi assim possível efetuar medidas pulsadas DC-IV e de parâmetros S (do inglês, Scattering) pulsados para vários pontos de polarização. Estas últimas foram conseguidas á custa da realização de um kit de calibração TRL. O interface gráfico com o sistema foi feito em Matlab, o que torna o sistema mais fácil de operar. Com as medidas resultantes pôde ser obtida uma primeira análise acerca da eficiência, ganho e potência máxima entregue pelo dispositivo. Mais tarde, com as mesmas medidas pôde ser obtido um modelo não linear completo do dispositivo, facilitando assim o projeto de amplificadores.
Lately, the wireless networks should feature higher data rates than ever. With this rise, although very powerful codification schemes are used, the bandwidth of the transmitted signals is rising, as well as the frequency. Not only caused by this rise in frequency, but also by the growing need for more efficient systems, major advances have been made in terms of Radio Frequency (RF) Transistors that are used in Power Amplifiers (PAs), which are dominant components in terms of the total efficiency of base stations (BSS). With this evolution, new technologies of transistors are being developed, such as the Gallium Nitride High Electron Mobility Transistor (GaN HEMT). In order to predict and correct some dispersive effects that affect these new technologies and obtain the best possible amplifier for each different transistor, the designers are relying more than ever in the models of the devices. During this work, one system capable of performing very precise pulsed measurements on RF transistors was developed, so that they are not affected, during the measurements, by self-heating or other dispersive phenomena that are present in some technologies. Using these measurements it was possible to characterize these transistors for a pre-determined state of the temperature and all the other phenomena. In this document, the design and assembly of the complete system will be analysed, with special attention to the higher power component. It will be possible to measure pulsed Direct Current Current-Voltage (DC-IV) behaviour and pulsed Scattering (S) parameters of the device for many different bias points. These latter ones were possible due to the development of one TRL calibration kit. The interface with the system is made using a graphical interface designed in Matlab, which makes it easier to use. With the resulting measurements, as a first step analysis, the maximum efficiency, gain and maximum delivered power of the device can be estimated. Later, with the same measurements, the complete non-linear model of the device can be obtained, allowing the designers to produce state-of-art RF PAs.
Chapitres de livres sur le sujet "RF Pulse Compressor"
Biegert, Jens, et Jean-Claude Diels. « Pulse Compression ». Dans Encyclopedia of RF and Microwave Engineering. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/0471654507.eme329.
Texte intégralActes de conférences sur le sujet "RF Pulse Compressor"
Yakovlev, V. P. « Ferroelectric Switch For An Active RF Pulse Compressor ». Dans HIGH ENERGY DENSITY AND HIGH POWER RF : 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635119.
Texte intégralTantawi, Sami G. « Recent Advances in RF Pulse Compressor Systems at SLAC ». Dans HIGH ENERGY DENSITY AND HIGH POWER RF : 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635118.
Texte intégralVikharev, A. L. « Plasma Switch for X-Band Active SLED-II RF Pulse Compressor ». Dans ADVANCED ACCELERATOR CONCEPTS : Eleventh Advanced Accelerator Concepts Workshop. AIP, 2004. http://dx.doi.org/10.1063/1.1842624.
Texte intégralVikharev, A. L. « High-Power Tests of a Two-Channel X-Band Active RF Pulse Compressor Using Plasma Switches ». Dans HIGH ENERGY DENSITY AND HIGH POWER RF : 6th Workshop on High Energy Density and High Power RF. AIP, 2003. http://dx.doi.org/10.1063/1.1635120.
Texte intégralShlapakovski, Anatoli, Leonid Beilin, Moshe Donskoy, Yakov E. Krasik et Edl Schamiloglu. « Self-consistent plasma density evolution during RF energy extraction from a microwave pulse compressor ». Dans 2015 IEEE International Conference on Plasma Sciences (ICOPS). IEEE, 2015. http://dx.doi.org/10.1109/plasma.2015.7179958.
Texte intégralHalbout, J. M., S. L. Palfrey et D. L. Grischkowsky. « Ultrashort compression of amplified optical pulses ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.wz1.
Texte intégralWilson, Perry B. « RF pulse compression for future linear colliders ». Dans Pulsed RF sources for linear colliders. AIP, 1995. http://dx.doi.org/10.1063/1.48415.
Texte intégralMacInnes, P. « RF Pulse Compression Using Helically Corrugated Waveguides ». Dans HIGH ENERGY DENSITY AND HIGH POWER RF : 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158814.
Texte intégralLavine, Theodore L. « RF pulse compression in the NLC test accelerator at SLAC ». Dans Pulsed RF sources for linear colliders. AIP, 1995. http://dx.doi.org/10.1063/1.48414.
Texte intégralVikharev, A. L. « Experiments on Active RF Pulse Compressors Using Plasma Switches ». Dans HIGH ENERGY DENSITY AND HIGH POWER RF : 7th Workshop on High Energy Density and High Power RF. AIP, 2006. http://dx.doi.org/10.1063/1.2158813.
Texte intégralRapports d'organisations sur le sujet "RF Pulse Compressor"
Hirshfield, Jay L. Quasi-Optical 34-GHz Rf Pulse Compressor. Office of Scientific and Technical Information (OSTI), juin 2007. http://dx.doi.org/10.2172/908795.
Texte intégralFarkas, Z. D., et J. N. Weaver. RF pulse compression development. Office of Scientific and Technical Information (OSTI), octobre 1987. http://dx.doi.org/10.2172/5611138.
Texte intégralTantawi, Sami. New Development in RF Pulse Compression. Office of Scientific and Technical Information (OSTI), août 2000. http://dx.doi.org/10.2172/763857.
Texte intégralWilson, P. B., Z. D. Farkas, T. L. Lavine, A. Menegat, C. Nantista, R. D. Ruth et N. M. Kroll. Progress at SLAC on high-power rf pulse compression. Office of Scientific and Technical Information (OSTI), juin 1992. http://dx.doi.org/10.2172/10137398.
Texte intégralNantista, Christopher D. ALTERNATIVE RF PULSE COMPRESSION SYSTEM CONFIGURATIONS FOR LINEAR COLLIDERS. Office of Scientific and Technical Information (OSTI), juin 2002. http://dx.doi.org/10.2172/799105.
Texte intégralWilson, P. B., Z. D. Farkas, T. L. Lavine, A. Menegat, C. Nantista, R. D. Ruth et N. M. Kroll. Progress at SLAC on high-power rf pulse compression. Office of Scientific and Technical Information (OSTI), juin 1992. http://dx.doi.org/10.2172/6665078.
Texte intégralTantawi, Sami. The Next Linear Collider Test Accelerator's RF Pulse Compression and Transmission Systems. Office of Scientific and Technical Information (OSTI), février 1999. http://dx.doi.org/10.2172/10192.
Texte intégralGuo, Jiquan. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems. Office of Scientific and Technical Information (OSTI), décembre 2008. http://dx.doi.org/10.2172/953016.
Texte intégralTantawi, S. Multimoded Reflective Delay Lines and Their Application to Resonant Delay Line RF Pulse Compression Systems. Office of Scientific and Technical Information (OSTI), juin 2004. http://dx.doi.org/10.2172/826970.
Texte intégralTantawi, Sami. Development of High Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Linear Colliders. Office of Scientific and Technical Information (OSTI), novembre 2000. http://dx.doi.org/10.2172/784865.
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