Littérature scientifique sur le sujet « RF robustness »
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Articles de revues sur le sujet "RF robustness"
Elyousseph, Hilal, et Majid Altamimi. « Robustness of Deep-Learning-Based RF UAV Detectors ». Sensors 24, no 22 (17 novembre 2024) : 7339. http://dx.doi.org/10.3390/s24227339.
Texte intégralBollmeyer, Christian, Mathias Pelka, Hartmut Gehring et Horst Hellbrück. « Wireless medical sensors – context, robustness and safety ». Current Directions in Biomedical Engineering 1, no 1 (1 septembre 2015) : 349–52. http://dx.doi.org/10.1515/cdbme-2015-0086.
Texte intégralPalego, C., Jie Deng, Zhen Peng, S. Halder, J. C. M. Hwang, D. I. Forehand, D. Scarbrough et al. « Robustness of RF MEMS Capacitive Switches With Molybdenum Membranes ». IEEE Transactions on Microwave Theory and Techniques 57, no 12 (décembre 2009) : 3262–69. http://dx.doi.org/10.1109/tmtt.2009.2033885.
Texte intégralNguyen, Ngoc-Kim-Khanh, Quang Nguyen, Hai-Ha Pham, Thi-Trang Le, Tuan-Minh Nguyen, Davide Cassi, Francesco Scotognella, Roberto Alfierif et Michele Bellingeri. « Predicting the Robustness of Large Real-World Social Networks Using a Machine Learning Model ». Complexity 2022 (9 novembre 2022) : 1–16. http://dx.doi.org/10.1155/2022/3616163.
Texte intégralAyaz Atalan, Yasemin, et Abdulkadir Atalan. « Testing the Wind Energy Data Based on Environmental Factors Predicted by Machine Learning with Analysis of Variance ». Applied Sciences 15, no 1 (30 décembre 2024) : 241. https://doi.org/10.3390/app15010241.
Texte intégralKheir, Mohamed, Heinz Kreft, Iris Hölken et Reinhard Knöchel. « On the physical robustness of RF on-chip nanostructured security ». Journal of Information Security and Applications 19, no 4-5 (novembre 2014) : 301–7. http://dx.doi.org/10.1016/j.jisa.2014.09.007.
Texte intégralLiu, Alan, Yu-Tai Lin et Karthikeyan Sundaresan. « View-agnostic Human Exercise Cataloging with Single MmWave Radar ». Proceedings of the ACM on Interactive, Mobile, Wearable and Ubiquitous Technologies 8, no 3 (22 août 2024) : 1–23. http://dx.doi.org/10.1145/3678512.
Texte intégralSanogo, Lamoussa, Eric Alata, Alexandru Takacs et Daniela Dragomirescu. « Intrusion Detection System for IoT : Analysis of PSD Robustness ». Sensors 23, no 4 (20 février 2023) : 2353. http://dx.doi.org/10.3390/s23042353.
Texte intégralSaha, Sunil, Anik Saha, Tusar Kanti Hembram, Biswajeet Pradhan et Abdullah M. Alamri. « Evaluating the Performance of Individual and Novel Ensemble of Machine Learning and Statistical Models for Landslide Susceptibility Assessment at Rudraprayag District of Garhwal Himalaya ». Applied Sciences 10, no 11 (29 mai 2020) : 3772. http://dx.doi.org/10.3390/app10113772.
Texte intégralOuyang, Hui, Weibo Li, Feng Gao, Kangzheng Huang et Peng Xiao. « Research on Fault Diagnosis of Ship Diesel Generator System Based on IVY-RF ». Energies 17, no 22 (20 novembre 2024) : 5799. http://dx.doi.org/10.3390/en17225799.
Texte intégralThèses sur le sujet "RF robustness"
Bu, Long. « Linearity and Interference Robustness Improvement Methods for Ultra-Wideband Cmos Rf Front-End Circuits ». The Ohio State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=osu1211476269.
Texte intégralAl, Issa Huthaifa A. « Position-adaptive Direction Finding for Multi-platform RF Emitter Localization using Extremum Seeking Control ». University of Dayton / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1343755148.
Texte intégralSaid, Nasri. « Evaluation de la robustesse des technologies HEMTs GaN à barrière AlN ultrafine pour l'amplification de puissance au-delà de la bande Ka ». Electronic Thesis or Diss., Bordeaux, 2024. http://www.theses.fr/2024BORD0425.
Texte intégralThe GaN industry is strategic for the European Union because it enhances the power and efficiency of radar and telecommunication systems, especially in the S to Ka bands (up to 30 GHz). To meet the needs of future applications such as 5G and military systems, GaN technology development aims to increase frequencies to the millimeter-wave range. This requires optimizing epitaxy and reducing the gate length to less than 150 nm, as well as using ultrathin barriers (<10 nm) to avoid short-channel effects. Replacing the AlGaN barrier with AlN is a solution to maintain good performance while miniaturizing devices. In this thesis, several technological variants with an ultrathin AlN barrier (3 nm) on undoped GaN channels of various thicknesses, developed by the IEMN laboratory, are studied. The evaluation of the performance and robustness of these technologies, crucial for their qualification and use in long-term profil missions, is conducted in both DC and RF modes to define the safe operating areas (SOA) and identify degradation mechanisms.The DC and pulsed characterization campaign revealed low component dispersion after electrical stabilization, reflecting good technological control. This also allows for more relevant statistical studies and generic analyses across all component batches studied. The sensitivity analysis of the devices at temperatures up to 200°C demonstrated strong thermal stability in diode and transistor modes, following parametric indicators representative of the electrical models of the components (saturation currents and leakage currents, threshold voltage, gate and drain lags rates, ...). The addition of a AlGaN back-barrier on a moderately C-doped buffer layer resolved the trade-off between electron confinement and trap densities. Accelerated aging tests in DC mode at various biasing conditions and in RF mode by input power steps showed that the AlGaN back-barrier provides better stability in leakage currents and static I(V) curves, reduces trapping and self-heating effects, and extends the operational DC-SOA.Dynamic accelerated aging tests at 10 GHz on HEMTs with different gate-drain spacings showed that the RF-SOA does not depend on this spacing but rather on the gate's ability to withstand high RF signals before abrupt degradation occurs. Using an original nonlinear modeling method that considers the self-biasing phenomenon, devices with the AlGaN back-barrier proved to be more robust in RF as well. This is reflected in their later gain compression, up to +10 dB, without apparent electrical or structural degradation (as observed by photoluminescence). Regardless of the AlN/GaN variant, the RF stress degradation mechanism corresponds to the abrupt breakdown of the Schottky gate, leading to its failure. These results indicate that the components are more sensitive to DC bias conditions than to the level of injected RF signals [...]
Pinault, Bastien. « Évaluation de topologies d'amplificateurs faible bruit et robustes en filière GaN pour applications radar ou télécom en bande X ». Electronic Thesis or Diss., Université de Toulouse (2023-....), 2024. http://www.theses.fr/2024TLSES070.
Texte intégralIn order to increase telecommunication data rates and enhance the precision and range of modern radar systems, improving the noise factor of a communication link has become crucial. As demonstrated by the FRIIS formula, the noise factor of a reception architecture is mainly determined by the noise factor of the first stage. It is, therefore, necessary to place a low-noise amplifier (LNA) upstream of the first stage. LNAs may face electromagnetic (EM) aggressions that can degrade or even render the system inoperative, depending on the intended application. Hence, it is essential to design LNAs that are robust against these EM aggressions. Due to their intrinsic characteristics (wide bandgap, high breakdown voltage, and good thermal conductivity), gallium nitride (GaN) technologies are excellent candidates for implementing low-noise amplifiers. The natural robustness offered by this material allows for the elimination of protection devices such as power limiters used in GaAs or SiGe technologies. Modern system constraints compel them to maintain their characteristics even when subjected to EM aggressions. Low-noise amplifier topologies must, therefore, meet the dual objective of high detectivity (low HF noise factor) and high linearity (high power) at usage frequencies. To increase the linearity of an LNA, one strategy involves oversizing the transistor (physical or electrical dimensions larger than those necessary for optimal noise factor). This approach improves nonlinear performance at the expense of noise parameters and/or small signals. This thesis proposes a novel approach that simultaneously exploits the nonlinear characteristics of an LNA design initially optimized for noise parameters by enhancing the nonlinear behavior of the active element through a change in its operating point. A comparative study and a broader state-of-the-art analysis position our solution within the spectrum of possibilities for achieving a low-noise and robust system
Oudji, Salma. « Analyse de la robustesse et des améliorations potentielles du protocole RadioFréquences Sub-GHz KNX utilisé pour l’IoT domotique ». Thesis, Limoges, 2016. http://www.theses.fr/2016LIMO0121/document.
Texte intégralThis thesis addresses the performance of the KNX-RF protocol used for home automation applications in terms of radiofrequency robustness in a multi-protocol environment that is potentially subject to interferences. In this work, the aim is to assess the interference problems encountered by KNX-RF using simulation models that would increase its RF reliability. Thus, a first model was developed on MATLAB / Simulink and allowed to investigate the performance and limitations of this protocol at its physical layer in an interference scenario occurring inside a multiprotocol home and building automation box/gateway. These simulations were followed by field experimental tests in an indoor environment (house) to verify the results. A second model was developed to evaluate the MAC layer mechanisms of KNX-RF through the discrete event simulator OMNeT ++/Mixim. This model includes all the mechanisms of channel access and frequency agility specified by KNX-RF standard. A frame collision scenario was simulated and several improvement proposals are discussed in this manuscript. The developed models can be used to analyze and predict in advance phase the behavior of KNX-RF in a radio-constrained environment
Chapitres de livres sur le sujet "RF robustness"
Sakian, Pooyan, Reza Mahmoudi et Arthur van Roermund. « System-Level Design for Robustness ». Dans RF-Frontend Design for Process-Variation-Tolerant Receivers, 7–38. Boston, MA : Springer US, 2012. http://dx.doi.org/10.1007/978-1-4614-2122-1_2.
Texte intégralBartz-Beielstein, Thomas, et Martin Zaefferer. « Models ». Dans Hyperparameter Tuning for Machine and Deep Learning with R, 27–69. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-5170-1_3.
Texte intégralBarbulescu, Ruxandra, Tiago Marques et Arlindo L. Oliveira. « Contribution of V1 Receptive Field Properties to Corruption Robustness in CNNs ». Dans Frontiers in Artificial Intelligence and Applications. IOS Press, 2024. http://dx.doi.org/10.3233/faia240546.
Texte intégralCurcio, Giuseppe. « Human Psychomotor Performance Under the Exposure to Mobile Phones-Like Electromagnetic Fields ». Dans Advances in Computer and Electrical Engineering, 923–36. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-7598-6.ch067.
Texte intégralCurcio, Giuseppe. « Human Psychomotor Performance Under the Exposure to Mobile Phones-Like Electromagnetic Fields ». Dans Encyclopedia of Information Science and Technology, Fourth Edition, 6124–35. IGI Global, 2018. http://dx.doi.org/10.4018/978-1-5225-2255-3.ch532.
Texte intégralMuthurajkumar, S., G. Kajeeth Kumar et S. T. P. Mohana Priya. « Crayfish-Optimized CNN and Random Forest for Effective Plant Disease Detection ». Dans Advances in Environmental Engineering and Green Technologies, 209–44. IGI Global, 2025. https://doi.org/10.4018/979-8-3693-8019-2.ch007.
Texte intégralmihalache Ovidiu, Yamaouchi Toshihiko et Ueda Masashi. « Validations of Multifrequency ECT Algorithms for Helical SG Tubes of FBR ». Dans Studies in Applied Electromagnetics and Mechanics. IOS Press, 2014. https://doi.org/10.3233/978-1-61499-407-7-109.
Texte intégralUrbanczyk, Guillaume. « Main Challenges of Heating Plasma with Waves at the Ion Cyclotron Resonance Frequency (ICRF) ». Dans Advances in Fusion Energy Research - Theory, Models, Algorithms, and Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.105394.
Texte intégralKundu, Krishanu. « Past, Present, and Future of Rate Splitting Multiple Access for Wireless Networks ». Dans Radar and RF Front End System Designs for Wireless Systems, 275–95. IGI Global, 2024. http://dx.doi.org/10.4018/979-8-3693-0916-2.ch011.
Texte intégralLiu, Guangyu, Xinying Qu et Dongzhe Qu. « Application and Optimization of Artificial Intelligence in Distributed Energy Management Systems ». Dans Frontiers in Artificial Intelligence and Applications. IOS Press, 2024. http://dx.doi.org/10.3233/faia241166.
Texte intégralActes de conférences sur le sujet "RF robustness"
Said, N., D. Saugnon, K. Harrouche, F. Medjdoub, N. Labat, N. Malbert et J.-G. Tartarin. « RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier : nonlinear model analysis ». Dans 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2–5. IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732162.
Texte intégralKiasari, Mahmoud, et Hamed H. Aly. « Evaluating Solar Power Forecasting Robustness : A Comparative Analysis of XGBoost, RNN, KNN, RF, and LSTM with emphasis on Lagged Steps, Sensitivity, and Cross-Validation Techniques ». Dans 2024 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), 686–92. IEEE, 2024. http://dx.doi.org/10.1109/ccece59415.2024.10667188.
Texte intégralLiu, Zhengdong, Yuanxin Liu, Dajie Zeng, Weichang Xue et Yaohui Zhang. « RF LDMOS with excellent robustness for wideband application ». Dans 2015 Asia-Pacific Microwave Conference (APMC). IEEE, 2015. http://dx.doi.org/10.1109/apmc.2015.7413377.
Texte intégralGoldsmith, C. L., J. C. M. Hwang, C. Gudeman, O. Auciello, J. L. Ebel et H. S. Newman. « Robustness of RF MEMS capacitive switches in Harsh Environments ». Dans 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012. IEEE, 2012. http://dx.doi.org/10.1109/mwsym.2012.6259627.
Texte intégralChoudhuri, Chiranjib, Abhishek Ghosh, Urbashi Mitra et Sudhakar Pamarti. « Robustness of xampling-based RF receivers against analog mismatches ». Dans ICASSP 2012 - 2012 IEEE International Conference on Acoustics, Speech and Signal Processing. IEEE, 2012. http://dx.doi.org/10.1109/icassp.2012.6288538.
Texte intégralKaynak, M., F. Korndo, M. Wietstruck, D. Knoll, R. Scholz, C. Wipf, C. Krause et B. Tillack. « Robustness and reliability of BiCMOS embedded RF-MEMS switch ». Dans 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011). IEEE, 2011. http://dx.doi.org/10.1109/sirf.2011.5719336.
Texte intégralSandupatla, Abhinay, Shih-Hung Chen, Nikhil Mane, Bertrand Parvais, Hao Yu, Nilam Pradhan et Nadine Collaert. « Solutions To Improve HBM ESD Robustness of GaN RF HEMTs ». Dans 2023 45th Annual EOS/ESD Symposium (EOS/ESD). IEEE, 2023. http://dx.doi.org/10.23919/eos/esd58195.2023.10287752.
Texte intégralKokalj-Filipovic, Silvija, Rob Miller et Garrett Vanhoy. « Adversarial Examples in RF Deep Learning : Detection and Physical Robustness ». Dans 2019 IEEE Global Conference on Signal and Information Processing (GlobalSIP). IEEE, 2019. http://dx.doi.org/10.1109/globalsip45357.2019.8969138.
Texte intégralKozlov, Mikhail, et Robert Turner. « RF transmit robustness of dual-row MRI array at 300 MHz ». Dans 2013 Asia Pacific Microwave Conference - (APMC 2013). IEEE, 2013. http://dx.doi.org/10.1109/apmc.2013.6694861.
Texte intégralScholz, Mirko, et Friedrich zur Nieden. « Early Evaluation of ESD Robustness of RF ICs on System-Level ». Dans 2021 43rd Annual EOS/ESD Symposium (EOS/ESD). IEEE, 2021. http://dx.doi.org/10.23919/eos/esd52038.2021.9574774.
Texte intégralRapports d'organisations sur le sujet "RF robustness"
Oh, Ju Hyun, Aimee Martinez, Huaixuan Cao, Garrett George, Jared Cobb, Poonam Sharma, Lauren Fassero et al. Radio frequency heating of washable conductive textiles for bacteria and virus inactivation. Engineer Research and Development Center (U.S.), janvier 2024. http://dx.doi.org/10.21079/11681/48060.
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