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Articles de revues sur le sujet « Semiconductors »

Auteur : Grafiati

Publié le 4 juin 2021

Mis à jour le 25 juillet 2025

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1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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2

Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (2022): 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be loc

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Aygün, Sultanova Haji gizi, and Gahramanova Khazar gizi Didem. "THIRD GENERATION SEMICONDUCTORS." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 97 (February 7, 2025): 42–44. https://doi.org/10.5281/zenodo.14832376.

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With the increasingly serious problems of environmental pollution and global warming, the research and application of renewable energy sources have attracted unprecedented attention. Among them, semiconductor technology, as an important tool for promoting green energy transformation, is attracting more and more attention from scientific research and industry. In particular, third-generation semiconductor materials are revolutionizing the field of renewable energy due to their superior physical properties and application prospects. With the rapid development of technology, third-generation

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4

Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.

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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These m

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Xu, Yuanqing, Weibiao Wang, Zhexue Chen, et al. "A general strategy for semiconductor quantum dot production." Nanoscale 13, no. 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.

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Łukasiak, Lidia, and Andrzej Jakubowski. "History of Semiconductors." Journal of Telecommunications and Information Technology, no. 1 (June 26, 2023): 3–9. http://dx.doi.org/10.26636/jtit.2010.1.1015.

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The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices).

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WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.

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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temper

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B. Prakash Ayyappan, T. Parthiban, M. Barkavi, V. Nithyapoorani, M. Sathya, and G. Gopperumdevi. "Study on enhanced real time applications of compound semiconductor (SiC and GaN) power devices with AI and IoT Technologies." International Journal of Science and Research Archive 12, no. 2 (2024): 947–64. http://dx.doi.org/10.30574/ijsra.2024.12.2.1309.

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Compound semiconductors, composed of two or more elements, differ from single-element semiconductors like silicon. These materials are crucial because they have a direct band gap, unlike elemental semiconductors such as silicon and germanium, making them ideal for optoelectronic applications like LEDs, semiconductor lasers, and photo detectors. Robots rely on sophisticated sensors to collect vital data for their operation, including internal data on temperature, moisture, movement, and position, as well as external data from images, infrared light, and sound, processed through semiconductor un

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Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.

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Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of

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Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor." Applied and Computational Engineering 7, no. 1 (2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.

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Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more ex

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Meng, X. Y., D. Y. Liu, and G. W. Qin. "Band engineering of multicomponent semiconductors: a general theoretical model on the anion group." Energy & Environmental Science 11, no. 3 (2018): 692–701. http://dx.doi.org/10.1039/c7ee03503a.

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Development of energy conversion semiconductor materials has attracted increasing interest over the past three decades, but most successful semiconductors are unary or binary, rather than multicomponent semiconductors (MCSCs).

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Khan, Arif, and Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures." Zeitschrift für Naturforschung A 65, no. 10 (2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.

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A general relationship between the diffusivity and the mobility in degenerate semiconductors with non-uniform energy band structures has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the study of electrical transport in heavily doped semiconductors and semiconductor devices.

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13

Yang, Xiaobing, Zhaodong Wen, Ziling Wu, and Xuetao Luo. "Synthesis of ZnO/ZIF-8 hybrid photocatalysts derived from ZIF-8 with enhanced photocatalytic activity." Inorganic Chemistry Frontiers 5, no. 3 (2018): 687–93. http://dx.doi.org/10.1039/c7qi00752c.

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Controllable conjunction of semiconductors with metal organic frameworks (MOFs) has been an efficient tool to enhance the chemical and physical properties of semiconductors by forming semiconductor–MOF hybrid structures.

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Kumar, Anoop. "PRESENT STATUS OF SEMICONDUCTOR INDUSTRY IN INDIA and IT’S FUTURE PROSPECTS." SCHOLARLY RESEARCH JOURNAL FOR INTERDISCIPLINARY STUDIES 9, no. 68 (2021): 16095–100. http://dx.doi.org/10.21922/srjis.v9i68.10004.

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Semiconductor is now an inseparable part of almost all sectors. Nowadays semiconductors or chips / integrated circuits (ICs) are the lifeblood of all digital Products. Industry estimates are that India’s demand for semi - conductor goods will reach US $ 400 billion by FY 2025. Taiwan’s TSMC and South Korea’s Samsung manufacture as much as 70% of the world’s semiconductors. America only makes about 10% of the chips it uses. According to Global data, the semiconductor industry is facing an unprecedentad supply shortage since the end of the year 2019 due to unprecedented demand growth. The govern

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15

Ngai, J. H., K. Ahmadi-Majlan, J. Moghadam, et al. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities." MRS Advances 1, no. 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.

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ABSTRACTComplex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structu

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16

Sánchez-Vergara, Guevara-Martínez, Arreola-Castillo, and Mendoza-Sevilla. "Fabrication of Hybrid Membranes Containing Nylon-11 and Organic Semiconductor Particles with Potential Applications in Molecular Electronics." Polymers 12, no. 1 (2019): 9. http://dx.doi.org/10.3390/polym12010009.

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Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular semiconductors were manufactured by high-vacuum evaporation followed by thermal relaxation. Initially, and with the aim of obtaining semiconductor particles, bulk heterojunction (BHJ) was carried out using green chemistry techniques between the zinc phthalocyanine (ZnPc) an

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17

Lund, Mark W. "More than One Ever Wanted to Know about X-Ray Detectors Part VI: Alternate Semiconductors for Detectors." Microscopy Today 3, no. 5 (1995): 12–13. http://dx.doi.org/10.1017/s1551929500066116.

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X-ray spectrometers give the capability to determine chemical element composition in electron microscopes. The semiconductor with the most experience as an x-ray detector is silicon. Silicon is the most highly developed material on earth, and has a lot of good things going for it, but for some applications we crave something with other good properties. For example, for room temperature detectors it would be best to have a semiconductor with a wider band gap. For higher resolution it would be better to have a semiconductor with a smaller band gap. For these reasons a number of other semiconduct

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18

М. Н. Аликулов. "ЗАВИСИМОСТЬ СТРУКТУРЫ ЗОН ПОЛУПРОВОДНИКОВ ОТ СКОРОСТИ РЕКОМБИНАЦИИ МЕЖДУ ЗОНАМИ". World Science 1, № 5(57) (2020): 31–34. http://dx.doi.org/10.31435/rsglobal_ws/31052020/7073.

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This article researches the dependence of recombination processes that occur in semiconductors on the structure of semiconductor zones. The advantages of using faulty zonal semiconductors in the development of solar cells have been substantiated.

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19

GÜRBULAK, BEKİR, and Mehmet Kürşat Dumanlı. "Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese." Journal of Anatolian Physics and Astronomy 3, no. 2 (2024): 44–51. https://doi.org/10.5281/zenodo.14343868.

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Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesized from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by the Bridgman/Stockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the

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20

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible

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21

Xia, Qingjiao. "Charge Transport Mechanism of Organic Semiconductors Based on Molecular Dynamics Simulation." Academic Journal of Science and Technology 7, no. 3 (2023): 148–50. http://dx.doi.org/10.54097/ajst.v7i3.13265.

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The aim of this paper is to investigate the charge transport mechanism in organic semiconductors based on molecular dynamics simulation. Molecular dynamics simulation, as an effective computational method, can reveal the microscopic mechanism of charge transport in organic semiconductors. The basic principles and methods of molecular dynamics simulation will be introduced in the paper, and its application in studying charge transport in organic semiconductors will be discussed. Through the simulation analysis, the effects of key parameters such as intermolecular interactions, carrier mobility

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Yakubovich, Boris. "Influence of penetrating radiations on electrical low frequency noise of semiconductors." ADVANCES IN APPLIED PHYSICS 9, no. 3 (2021): 181–86. http://dx.doi.org/10.51368/2307-4469-2021-9-3-181-186.

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The influence of penetrating radiations on the electrical low-frequency noise of semiconductors is studied. Expression is calculated that determines the number of structural defects in semiconductors arising from exposure to penetrating radia-tion. General form expression is calculated for the spectrum of electrical low-frequency noise in semiconductors when exposed to penetrating radiation. Quanti-tative relationship was established between the spectrum of electrical low-frequency noise and the development of disturbances in the structure of semicon-ductors caused by penetrating radiations. T

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Azevedo, Ary Machado de, Thomaz Jacintho Lopes, Domingos D’Oliveira Cardoso, Sérgio Neves Monterio, Paulo Cezar Rocha Silveira, and André Bem-Hur da Silva Figueiredo. "SiGe semiconductor electronic component: a review on fundamentals and applications." OBSERVATÓRIO DE LA ECONOMÍA LATINOAMERICANA 22, no. 12 (2024): e8370. https://doi.org/10.55905/oelv22n12-219.

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This review addresses the application of silicon-germanium (SiGe) semiconductors as electronic components, highlighting their enhanced electronic and physical properties compared to pure silicon semiconductors. SiGe Semiconductors are widely used in high-performance devices, such as heterojunction bipolar transistors (HBTs) and radio-frequency integrated circuits (RFICs), due to their ability to improve speed, efficiency, and overall device performance. Incoporating Ge into Si increases electron mobility, enabling devices to operate at higher speeds and with lower power consumption, which is c

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Yefimov, Stanislav V. "Theory of Electrolytic Ionization." Scholars Journal of Engineering and Technology 13, no. 06 (2025): 377–80. https://doi.org/10.36347/sjet.2025.v13i06.002.

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Semiconductors and aqueous solutions of acids and bases exhibit several common properties and characteristics. First, both are solutions. Semiconductors of the p- and n-types are solid solutions of doping impurities in a pure semiconductor (Silicon, Germanium). Aqueous solutions of acids and bases are liquids but can easily become solids when frozen. Second, the dependences of the main charge carrier's concentrations on the dopants' concentrations for aqueous solutions of electrolytes and doped semiconductors are identical. For aqueous solutions, the dopants are acids (n-type) and bases (p-typ

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MAHMOOD, RASHA SHAKIR, Muna Ali Shakir, Younis Turki Mahmood, and Dhia Hadi Hussain. "Semiconductors between past and present." Journal of Advanced Sciences and Engineering Technologies 3, no. 1 (2022): 54–56. http://dx.doi.org/10.32441/jaset03.01.05.

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There is no doubt that the semiconductor contributed very significantly to changing our world in the long run, which made it very necessary to write this article and shed light on the semiconductor between past and present. Whereas, this article is not intended to teach you semiconductor chemistry and its applications, but it also aims to refresh your memory with everything related to semiconductors from the moment of sunrise to the present day.As known, people need to communicate with each other in order to meet their daily and professional needs. In the past, the communication process was ve

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Chen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors." Highlights in Science, Engineering and Technology 81 (January 26, 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.

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Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitr

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Qi, Xinjie. "The Development History and Evolutionary Trends of Semiconductor." Applied and Computational Engineering 125, no. 1 (2025): 222–30. https://doi.org/10.54254/2755-2721/2025.21275.

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The exponential growth of AI technology is transforming the global semiconductor industry. The significant demand for high-performance computing chips for AI is driving continuous innovation in the semiconductor industry. As the evolution of Moore's Law is slowing down, new technologies should be explored to continue Moore's Law. The development of semiconductors will become more diverse in the future. New-structure transistors, new semiconductor materials, three-dimensional integrated circuits (3DICs), and DTCO are all potential avenues for the future development of semiconductors. A study of

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TALANINA, I. B. "EXCITONIC SELF-INDUCED TRANSPARENCY IN SEMICONDUCTORS." Journal of Nonlinear Optical Physics & Materials 05, no. 01 (1996): 51–57. http://dx.doi.org/10.1142/s0218863596000064.

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The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical

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Kato, Masashi. "Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials." Japanese Journal of Applied Physics 64, no. 6 (2025): 060101. https://doi.org/10.35848/1347-4065/adda80.

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Abstract Carrier recombination is important in the field of semiconductors because it contributes to the performance of bipolar devices and solar cells. However, as the semiconductor field expands from conventional materials to wide band gap semiconductors: SiC and related wide band gap semiconductor materials, concerns have emerged regarding the detailed analysis and accurate estimation of carrier recombination lifetime. Therefore, this review discusses bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials, both in theoretical and experimental vie

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Tulanova, Bakhrikhon Abdusamatovna, and Muhayyo Lutfullaevna Boltaeva. "THE CONTENT OF MATERIALS FOR SEMICONDUCTORS AND THE PRINCIPLES OF THEIR SELECTION." Eurasian Journal of Academic Research 2, no. 2 (2022): 740–43. https://doi.org/10.5281/zenodo.6346841.

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This article presents the problems to be solved in creating the content of semiconductor materials, the objectives of effective use of selected materials in the learning process, didactic requirements to materials, recommended methods of teaching selected materials on semiconductors, the structure and summary of selected materials on semiconductors.

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Tao, Kai, Pandeeswar Makam, Ruth Aizen, and Ehud Gazit. "Self-assembling peptide semiconductors." Science 358, no. 6365 (2017): eaam9756. http://dx.doi.org/10.1126/science.aam9756.

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Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band g

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Anthony, John E., Martin Heeney, and Beng S. Ong. "Synthetic Aspects of Organic Semiconductors." MRS Bulletin 33, no. 7 (2008): 698–705. http://dx.doi.org/10.1557/mrs2008.142.

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AbstractThis article discusses the importance of the choice of synthetic methodology in the purity, and therefore performance, of both small-molecule and polymeric organic semiconductors. We discuss common methodologies used in the preparation of organic semiconductors, paying particular attention to the impurities and by-products that can arise during these synthetic approaches and how they can have an impact on semiconductor performance.

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Kim, Kyunghun, Hocheon Yoo, and Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications." Polymers 14, no. 14 (2022): 2960. http://dx.doi.org/10.3390/polym14142960.

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The life expectancy of humans has been significantly elevated due to advancements in medical knowledge and skills over the past few decades. Although a lot of knowledge and skills are disseminated to the general public, electronic devices that quantitatively diagnose one’s own body condition still require specialized semiconductor devices which are huge and not portable. In this regard, semiconductor materials that are lightweight and have low power consumption and high performance should be developed with low cost for mass production. Organic semiconductors are one of the promising materials

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Zaizen, Shohei, Kyohei Asami, Takashi Furukawa, et al. "The Development of a Compact Pulsed Power Supply with Semiconductor Series Connection." Electronics 12, no. 21 (2023): 4541. http://dx.doi.org/10.3390/electronics12214541.

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In this study, high-voltage switching was performed by connecting semiconductors in series. By employing Snubber circuits and voltage divider resistors for each semiconductor, the destruction of the semiconductors was prevented. Additionally, a pulse transformer was installed between the function generator and the photocoupler to isolate the gate circuit, preventing electrical discharges in the circuit and enabling operation at an output voltage of 10 kV and an operating frequency of 200 Hz. The temperature of the semiconductors increased with the increase in operating frequency, which was cou

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Borges-González, Jorge, Christina J. Kousseff, and Christian B. Nielsen. "Organic semiconductors for biological sensing." Journal of Materials Chemistry C 7, no. 5 (2019): 1111–30. http://dx.doi.org/10.1039/c8tc05900d.

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Xiang, Wenlong. "Semiconductor Culture in the Global Economy." Lecture Notes in Education Psychology and Public Media 25, no. 1 (2023): 7–11. http://dx.doi.org/10.54254/2753-7048/25/20230188.

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The use of technology in multiple industries has contributed to the growth of the global economy. As a core part of todays technology, the impact derived from semiconductors is two-sided. While the general public is focused on the advantages of semiconductors, the political-cultural-national tensions it creates are missing. Semiconductor culture is a combination of technology and politics in the context of economic development. The historical semiconductor battles between countries and the current semiconductor battles confirm this view. This paper reviews the Japan-US semiconductor war in the

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Greco, Rossella, Romain Botella, and Javier Fernández-Catalá. "Cu-Based Z-Schemes Family Photocatalysts for Solar H2 Production." Hydrogen 4, no. 3 (2023): 620–43. http://dx.doi.org/10.3390/hydrogen4030040.

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Solar photocatalytic H2 production has drawn an increasing amount of attention from the scientific community, industry, and society due to its use of green solar energy and a photocatalyst (semiconductor material) to produce green H2. Cu-based semiconductors are interesting as photocatalysts for H2 production because Cu is earth-abundant, cheap, and the synthesis of its copper-containing semiconductors is straightforward. Moreover, Cu-based semiconductors absorb visible light and present an adequate redox potential to perform water splitting reaction. Nevertheless, pristine Cu-based semiconduc

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Khurana, Divyansh Anil, Nina Plankensteiner, and Philippe M. Vereecken. "Reversible Redox Probes to Determine the Band Edge Locations for Nano-TiO₂." ECS Meeting Abstracts MA2023-01, no. 30 (2023): 1803. http://dx.doi.org/10.1149/ma2023-01301803mtgabs.

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Semiconductor (photo-)electrocatalysts show immense promise in answering the difficulties faced in CO2 electrolysis in relation to the reduction product selectivity. We thus see materials like ZnO[1], Cu2-xSe[2], MoS2 [3], TiO2 [4] and their numerous composites being frequently investigated for their catalytic properties in CO2 (photo-)electroreduction. These catalysts are fabricated via varying techniques and can assume very different thicknesses and morphologies. Although the nano-semiconductors may behave differently, often only the bulk properties are considered when proposing possible rea

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Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe, and Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor." Journal of Materials Research 4, no. 2 (1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

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Kauzlarich, Susan M. "(Invited) Microwave-Assisted Synthesis and Characterization of Doped Ge Nanocrystals." ECS Meeting Abstracts MA2024-01, no. 23 (2024): 1348. http://dx.doi.org/10.1149/ma2024-01231348mtgabs.

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Ge is one of the quintessential semiconductors being considered in nanoform for optoelectronic applications. As a group 14 semiconductor, bulk Ge has a small bandgap and a large Bohr exciton radius, making it an attractive semiconductor for various applications, including solar cell technology, photodetectors, and integrated flash memory devices. I will present our work on doped and alloyed Ge nanoparticles via microwave-assisted synthesis and galvanic replacement. I will present new insights from this chemical route that may impact the nanoparticle synthesis of other covalently bonding semico

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Zhao, Wenkai. "The Application Status of the Third Generation of Semiconductor Materials in the FIeld of Electric Power." Highlights in Science, Engineering and Technology 53 (June 30, 2023): 194–98. http://dx.doi.org/10.54097/hset.v53i.9723.

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With the vigorous development of semiconductor materials, the third generation of semiconductors represented by SiC, GaN, and diamond have gradually become the mainstream materials of modern semiconductors, and this paper introduces the application of SiC, GaN, and diamond, respectively, and analyzes their existing properties. The advantages and disadvantages of each are drawn in more detail.

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Mukerjee, Sanjeev, Benjamin William Kaufold, Parisa Nematollahi, et al. "(Invited) Fundamentals of Plasmon-Induced Charge Transfer in Semiconducting Materials: Showcasing OER Catalysis." ECS Meeting Abstracts MA2024-01, no. 35 (2024): 1956. http://dx.doi.org/10.1149/ma2024-01351956mtgabs.

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Using Localized Surface Plasmon Resonance Effect for Enhancing Electrochemical reactions has been reported earlier both in terms of direct electron injection/transfer (DET) in outer-sphere reductive processes as well as charge injection into semiconductors via plasmon-induced resonant electron transfer processes (PIRE). While the former (DET) is mainly influenced by the lifetimes of the ejected hot electrons and their rapid cooling at the interface. For inner sphere reductive processes via the LSPR phenomenon, direct charge injection into the LUMO states of the adsorbed species is required. In

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Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics." MRS Bulletin 28, no. 10 (2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

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AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues relat

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Kim, Dongwook, Hyeonju Lee, Bokyung Kim, et al. "Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance." Materials 15, no. 19 (2022): 6763. http://dx.doi.org/10.3390/ma15196763.

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The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystalli

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Das, Rajat Suvra. "TensorFlow: Revolutionizing Large-Scale Machine Learning in Complex Semiconductor Design." International Journal of Computing and Engineering 5, no. 3 (2024): 1–9. http://dx.doi.org/10.47941/ijce.1812.

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The development of semiconductor manufacturing processes is becoming more intricate in order to meet the constantly growing need for affordable and speedy computing devices with greater memory capacity. This calls for the inclusion of innovative manufacturing techniques hardware components, advanced intricate assemblies and. Tensorflow emerges as a powerful technology that comprehensively addresses these aspects of ML systems. With its rapid growth, TensorFlow finds application in various domains, including the design of intricate semiconductors. While TensorFlow is primarily known for ML, it

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Deng, Zhanpeng. "Development of The Third Generation of Semiconductors with SiC and GaN as The Mainstay." Highlights in Science, Engineering and Technology 27 (December 27, 2022): 436–42. http://dx.doi.org/10.54097/hset.v27i.3798.

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The application and development of semiconductor technology has a very important role in the development of the world's science and technology. The third-generation semiconductors are broadband semiconductors with high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, which are incomparable to the previous two generations of semiconductors. In this paper, we focus on the third-generation semiconductor materials and further study the most mature and widely used SiC and GaN, and introduce the mainstream methods for the preparation o

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Atiyev, Aripkan. "ABOUT SEMICONDUCTORS IN THE SCHOOL COURSE OF STUDY." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 80 (May 17, 2024): 37–39. https://doi.org/10.5281/zenodo.11211936.

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The article provides basic brief information about semiconductor physics, starting from the simple structure of semiconductor atoms and ending with their practical application. There are illustrations about the electronic. hole, intrinsic and impurity conductivities of electric current in semiconductors.

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Smertenko, P. S. "Vadim Evgenievich Lashkarev and optoelectronics." Optoelektronìka ta napìvprovìdnikova tehnìka 58 (December 21, 2023): 5–15. http://dx.doi.org/10.15407/iopt.2023.58.005.

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On 7 October 2023, the scientific community celebrated the 120th anniversary of the birth of Vadym Yevhenovych Lashkariov, a physicist, discoverer of the p-n junction, teacher, organiser of science, and simply a smart and decent person (07.10.2003 - 01.12.1974). In our opinion, the significance and influence of V.E. Lashkarev on the further development of physics, in particular semiconductor physics in Ukraine, has not been sufficiently revealed, although a number of articles have been published over the past decades on the life and scientific work of Vadym Yevhenovych. This article aims to lo

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Liu, Ye-Zhi, Wen-Min Lu, Phung Phi Tran, and Thanh Anh Khoa Pham. "Sustainable Energy and Semiconductors: A Bibliometric Investigation." Sustainability 16, no. 15 (2024): 6548. http://dx.doi.org/10.3390/su16156548.

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This study investigates the link between semiconductors and sustainability, focusing on their role in advancing energy sustainability from 1999 to 2023. Key research trends, collaboration patterns, and the evolving role of semiconductors in addressing energy sustainability challenges are identified. Semiconductor research significantly contributes to the United Nations’ sustainability goals, particularly in improving energy efficiency and promoting clean energy. The analysis reveals the predominance of primary research articles, highlighting the field’s interdisciplinary nature with major cont

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CHENG, L. J., D. T. H. LIU, and K. L. LUKE. "OPTICAL PROCESSING WITH PHOTOREFRACTIVE COMPOUND SEMICONDUCTORS." Journal of Nonlinear Optical Physics & Materials 01, no. 03 (1992): 609–38. http://dx.doi.org/10.1142/s0218199192000303.

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Photorefractive compound semiconductors are attractive for optical processing because of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ratio. This paper presents a collection of recent experimental results on optical processing using photorefractive GaAs and InP. The results demonstrate the feasibility of using photorefractive compound semiconductors as dynamic holographic interaction media for optical processing applications.

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