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Littérature scientifique sur le sujet « SiGe SOLAR CELLS »

Auteur : Grafiati

Publié le 26 octobre 2023

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Articles de revues sur le sujet "SiGe SOLAR CELLS"

Diaz, Martin, Li Wang, Dun Li, Xin Zhao, Brianna Conrad, Anasasia Soeriyadi, Andrew Gerger et al. « Tandem GaAsP/SiGe on Si solar cells ». Solar Energy Materials and Solar Cells 143 (décembre 2015) : 113–19. http://dx.doi.org/10.1016/j.solmat.2015.06.033.

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Zulkefle, Ahmad Aizan, Maslan Zainon, Zaihasraf Zakaria, Mohd Ariff Mat Hanafiah, Nurul Huda Abdul Razak, Seyed Ahmad Shahahmadi, Md Akhtaruzzaman, Kamaruzzaman Sopian et Nowshad Amin. « A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation ». Applied Mechanics and Materials 761 (mai 2015) : 341–46. http://dx.doi.org/10.4028/www.scientific.net/amm.761.341.

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This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better performance compared to Ge solar cell. The efficiency of 9.74% (VOC = 0.48V, JSC = 27.86mA/cm2, FF =0.73) is achieved with Si0.1Ge0.9 layer of 0.1μm in thickness whilst 2.73% (VOC = 0.20V, JSC = 27.31mA/cm2, FF =0.50) efficiency is obtained from Ge solar cell.

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ACHOUR, M. B., B. DENNAI et H. KHACHAB. « STUDY SIMULATION OF TOP-CELL ON THE PERFORMANCE OF AlxGa1- xAs/Si1-xGexTANDEM SOLAR CELL ». Digest Journal of Nanomaterials and Biostructures 15, n^o 2 (avril 2020) : 337–43. http://dx.doi.org/10.15251/djnb.2020.152.337.

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In this study, numerical optimization and analysis utilizing AMPS-1D software package of a simple model for tunnel junction (AlGaAs) between the top cell (AlGaAs) and bottom cell (SiGe) of cascade solar cells. The electrical properties and the photovoltaic performance parameters of AlGaAs/SiGe multijunction solar cells .The possible effects of base of the top cell layer thickness and doping level on solar cell performance parameters are addressed. The conversion efficiency of the solar cell has been found to increase significantly with the doping concentration in the range from 1015 to 1017 cm-3 of 19.52% to 31.19% under the AM1.5G spectrum and one sun. These results are very promising for future potential applications in multijunction and high performance AlGaAs/SiGe solar cells technology.

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Soeriyadi, Anastasia H., Brianna Conrad, Xin Zhao, Dun Li, Li Wang, Anthony Lochtefeld, Andrew Gerger, Ivan Perez-Wurfl et Allen Barnett. « Increased Spectrum Utilization with GaAsP/SiGe Solar Cells Grown on Silicon Substrates ». MRS Advances 1, n^o 43 (2016) : 2901–6. http://dx.doi.org/10.1557/adv.2016.354.

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ABSTRACTWorld-record solar-to-electricity energy conversion efficiency has been previously achieved by photovoltaic devices that maximize the use of the solar spectrum, such as multi-junction tandem solar cells. These cells are made of III-V materials whose high cost is a strong limitation on their widespread commercial application. One solution to suppress the cost of these types of devices is to grow III-V solar cells on low-cost carrier materials such as silicon. We will discuss the material, structure and analysis of GaAsP/SiGe-on-silicon multi-junction tandem solar cells. A low threading dislocation density is realized by effective lattice-matching of the top and bottom cells which demonstrate a device that achieves high open-circuit voltage in the top solar cell. The GaAsP/SiGe solar cells have reached a measured efficiency of 20.6% under one sun concentration. Analysis of these results based on the product of the best parameters shows efficiency potential of 26% under one sun, 30.8% at 20× and 35.1% at 400×.

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Hsieh, C. F., H. S. Wu, Teng Chun Wu et M. H. Liao. « Periodic Nanostructured Thin-Film Solar Cells ». Advanced Materials Research 860-863 (décembre 2013) : 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.860-863.114.

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Si-based photonic crystal device such as solar cells have been developed and attract lots of attention. Whether what kind of different structures are used, two key problems are needed to investigate. One is the improvement of the optic-electric (or electric-optic) transformation efficiency. Another is the capability to modulate the light-emitting and detection wavelength for various industrial applications. The wavelength of the light emission and detection can also be further adjusted by changing the material band-gap. In this work, we develop the periodic nanoscale surface textured solar cells. The characteristics of top thin film textured solar cells is developed and estimated to see if the structure is worthy to be scaled from the modern micrometer (um) level down to the nanometer (nm) level continuously. The process of nm-scale textured Si optoelectronic device used in this work is fully comparable to the modern CMOS industry. Optimal Ge concentration in SiGe-based solar cells has been investigated qualitatively by the systemic experiments. With the appropriate addition of Ge to a SiGe-based solar cell, the short current density (Isc) is successfully increased without affecting the open-circuit voltage (Voc) and then the overall efficiency is successfully improved about 4 % than the nanoscale surface textured Si solar cell.

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Zhang, Qiu Bo, Wen Sheng Wei et Feng Shan. « Analysis on micro-/poly-Crystalline SiGe Alloy Solar Cells ». Advanced Materials Research 690-693 (mai 2013) : 2872–80. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.2872.

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Performance of micro-/poly-crystalline SiGe alloy solar cell of TCO/(n)a-Si:H/(i)a-Si/(p) c(pc)-SiGe/(p+)μc-Si/Al structure was analyzed via the AFORS-HET software. Cell structures can be designed to reach up to the optimal performance. Employment of back surface electric field layer of (p+)μc-Si could improve cell properties. The maximum photoelectric conversion efficiency η=21.48% occurs in a cell with average Ge percent content x0.1 and 250 m-thick Si1-xGex alloy light absorption layer, which is higher than the experimental result of the same absorption layer thickness crystalline Si HIT cell [Progress in Photovoltaics: Research and Applications, 8 (2000) 503.]. Temperature dependence of the cell performance parameters (open circuit voltage Voc, circuit current density Jsc, fill factor FF and efficiency η) indicates that Si0.9Ge0.1 cell shows weaker temperature sensitivity than that of pure Si cell. Numerical calculation illustrates that Voc decreases while Jsc, FF and η heighten with raising mean grain sizes and crystalline volume fractions, these variations with the later are more remarkable. Present optimized technique will be benefit to designing and fabricating the high performance solar cell.

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Caño, Pablo, Manuel Hinojosa, Iván García, Richard Beanland, David Fuertes Marrón, Carmen M. Ruiz, Andrew Johnson et Ignacio Rey-Stolle. « GaAsP/SiGe tandem solar cells on porous Si substrates ». Solar Energy 230 (décembre 2021) : 925–34. http://dx.doi.org/10.1016/j.solener.2021.10.075.

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Safi, M., A. Aissat, H. Guesmi et J. P. Vilcot. « SiGe quantum wells implementation in Si based nanowires for solar cells applications ». Digest Journal of Nanomaterials and Biostructures 18, n^o 1 (mars 2023) : 327–42. http://dx.doi.org/10.15251/djnb.2023.181.327.

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This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.

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Daami, A., A. Zerrai, J. J. Marchand, J. Poortmans et G. Brémond. « Electrical defect study in thin-film SiGe/Si solar cells ». Materials Science in Semiconductor Processing 4, n^o 1-3 (février 2001) : 331–34. http://dx.doi.org/10.1016/s1369-8001(00)00101-3.

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Eisele, C., M. Berger, M. Nerding, H. P. Strunk, C. E. Nebel et M. Stutzmann. « Laser-crystallized microcrystalline SiGe alloys for thin film solar cells ». Thin Solid Films 427, n^o 1-2 (mars 2003) : 176–80. http://dx.doi.org/10.1016/s0040-6090(02)01216-6.

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Thèses sur le sujet "SiGe SOLAR CELLS"

Judkins, Zachara Steele. « A market analysis for high efficiency multi-junction solar cells grown on SiGe ». Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/42143.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2007.
Includes bibliographical references (leaves 50-53).
Applications, markets and a cost model are presented for III-V multi-junction solar cells built on compositionally graded SiGe buffer layers currently being developed by professors Steven Ringell of Ohio State University and Eugene Fitzgerald of MIT. Potential markets are similar to those currently occupied by high efficiency multi-junction space solar cells grown on a Germanium substrate. Initial cost analysis shows that at production volumes similar to those of the state of the art, cost could be reduced by a factor of' four. Significant market share may be gained in both the space and terrestrial PV markets due to improved performance associated with superior materials properties advantages as well as production cost reductions.
by Zachary Steele Judkins.
M.Eng.

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Polyzoeva, Evelina Aleksandrova. « Tradeoffs of the use of SiGe buffer layers in tandem GaAsP/Si solar cells ». Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/107289.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 101-103).
III-V multi-junction solar cells currently have the highest reported theoretical and experimental energy conversion efficiency but their cost, mainly attributed to the use of expensive substrates, limits their widespread use for terrestrial applications. Successful integration of III--V's on a Si substrate to enable a III-V/Si tandem cell can lower the cost of energy by combining the high-efficiency of the III--V materials with the low-cost and abundance of the Si substrate. A maximum theoretical efficiency of 44.8% from a tandem cell on Si can be achieved by using a GaAsP (Eg=1.7 eV) as the top cell. Out of several possible integration routes, the use of a linearly graded SiGe buffer as interfacial layer between the two cells potentially yields the highest quality for the epitaxial GaAsP layer, an essential requirement for realization of high-efficiency solar cells. In this thesis, the impact of the SiGe buffer layer on the optical and electrical characteristics of the bottom Si cell of a GaAsP/Si tandem solar cell was assessed via experimental work. The growth of a SiGe buffer layer was shown to increase the threading dislocation density and as a result the leakage current of the bottom Si cell by about 10x. In addition, the low-bandgap SiGe absorbs more than 80% of the light that is intended for the Si sub-cell, reducing the short-circuit current of the Si cell from 33 mA/cm² to only 6 mA/cm². By using a step-cell design, in which the SiGe was partially etched to allow more light to reach the bottom cell, the current was increased to 20 mA/cm². To quantify the merits of the studied approach as well as evaluate other approaches, we have carried out a theoretical study of absorbed irradiance in a Si single-junction cell, a bonded GaAsP/Si tandem cell, a GaAsP/SiGe/Si tandem cell as well as the step-cell design. The GaAsP/Si bonded tandem cell showed 24% relative improvement in light absorption over a single-junction Si cell. The addition of a SiGe graded buffer was shown to reduce the total absorption by 25%, bringing the efficiency of GaAsP/SiGe/Si tandem cell under that of the Si single-junction cell. The step-cell design, even though successful in increasing light absorption, was not found effective in achieving a higher absorbed power density than that of the Si cell. These results suggest that any future work on integrating GaAsP cells on Si towards a high-performance tandem cell should be focused on using a higher-bandgap material as a graded buffer or using a wafer bonding technique.
by Evelina Aleksandrova Polyzoeva.
Ph. D.

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Sharma, Prithu. « Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells ». Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/88367.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 117-122).
Integration of III-V compound semiconductors with silicon is an area that has generated a lot of interest because III-V materials and Si are best suited for different types of devices. Monolithic integration enables the best material to be chosen for each application, enabling new functionalities with the potential of additional miniaturization on a system level. Integration of GaAsP alloys on Si substrates would enable the creation of high efficiency dual-junction solar cells on low cost and light weight Si wafers and would also enable a path for yellow and green light emission devices on a Si platform. Our work focused on the materials integration problems for multiple pathways to integrate GaAsP alloys on Si substrates. We first addressed the direct integration of GaAsP alloys on Si substrates. Our results showed that despite the low lattice-mismatch conditions at the P-rich end of the GaAsP alloy spectrum, it was difficult to achieve thin films low defect density. We proceeded to focus on the integration of GaAsP alloys on Si via the use of SiGe compositionally graded layers. Through a combination of methods we addressed problems related to antiphase disorder and lattice mismatch between GaAsP and SiGe materials system. We demonstrated the epitaxial growth lattice-matched GaAsP on Si₀.₈₈Ge₀.₁₂, Si₀.₅Ge₀.₅, Si₀.₄Ge₀.₆ and Si₀.₃Ge₀.₇ virtual substrates with excellent interface properties. Our studies showed the effects of initiation conditions and intentional strain at the GaAsP/SiGe heterovalent interface. We have established strain-engineering methods at the GaAsP/SiGe heterovalent interface to prevent dislocation loop nucleation and expansion. We were able to attain GaAsP films on Si with a threading dislocation density as low as 1.2x10⁶/cm² . Our GaAsP/SiGe heterovalent interface research advanced the understanding of such structures. We developed methods to fabricate optimized GaAsP tunnel junction film, which would be necessary for any current-matched dual junction solar cell design. Prototype dual-junction GaAsP/Si solar cell test devices showed good preliminary performance characteristics and offer great promise for future devices integrated with the newly developed high quality GaAsP/Si virtual substrates.
by Prithu Sharma.
Ph. D.

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Andre, Carrie L. « III-V semiconductors on SiGe substrates for multi-junction photovoltaics ». The Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=osu1100290985.

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Kraft, Achim [Verfasser], et Holger [Akademischer Betreuer] Reinecke. « Plated copper front side metallization on printed seed-layers for silicon solar cells ». Freiburg : Universität, 2015. http://d-nb.info/111945252X/34.

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Martin, de Nicolas Silvia. « a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement ». Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112253/document.

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Parmi les technologies photovoltaïques à base de silicium, les cellules solaires à hétérojonction a-Si:H/c-Si (HJ) ont montré une attention croissante en ce qui concerne leur fort potentiel d’amélioration du rendement et de la réduction de coûts. Dans cette thèse, des investigations sur les cellules solaires à hétérojonction a-Si:H/c-Si de type (n) développées à l'Institut National de l'Énergie Solaire sont présentées. Les aspects technologiques et physiques du dispositif à HJ ont été revus, en mettant l'accent sur la compréhension du rôle joué par la face arrière. À travers le développement et la mise en œuvre des films de a-Si:H intrinsèques et dopés (n) de haute qualité des cellules solaires à HJ, les conditions requises en face arrière des dispositifs ont été établies. Une comparaison entre plusieurs types de champ surface arrière, avec et sans l’introduction d’une couche buffer, est présentée et les caractéristiques des cellules solaires résultants sont discutées. Une discussion autour du contact arrière de cellules solaires à HJ est aussi présentée. Une nouvelle approche d’oxyde transparent conducteur en face arrière basé sur les couches d’oxyde de zinc dopé au bore (ZnO:B) est étudié. Dans le but de développer des couches de ZnO:B de haute qualité bien adaptées à leur utilisation dans des dispositifs à HJ, différents paramètres de dépôt ainsi que des traitements après dépôt comme le post plasma d’hydrogène ou le recuit laser sont étudiés et leur influence sur des cellules solaires est évaluée. Au cours de ce travail il est montré que la face arrière des cellules solaires à HJ joue un rôle important sur l’accomplissement de hauts rendements. Cependant, l'augmentation de la performance globale du dispositif dû à l’optimisation de la face arrière de la cellule est toujours dépendante des phénomènes ayant lieu en face avant des dispositifs. L'utilisation des films optimisés pour la face arrière des HJs développées dans cette thèse, associée à des couches améliorées pour la face avant et une nouvelle approche de métallisation nous a permis d’atteindre un rendement de conversion record de plus de 22%, démontrant ainsi le grand potentiel de cette technologie à HJ de a-Si:H/c-Si
Amongst available silicon-based photovoltaic technologies, a-Si:H/c-Si heterojunctions (HJ) have raised growing attention because of their potential for further efficiency improvement and cost reduction. In this thesis, research on n-type a-Si:H/c-Si heterojunction solar cells developed at the Institute National de l’Énergie Solaire is presented. Technological and physical aspects of HJ devices are reviewed, with the focus on the comprehension of the back side role. Then, an extensive work to optimise amorphous layers used at the rear side of our devices as well as back contact films is addressed. Through the development and implementation of high-quality intrinsic and n-doped a-Si:H films on HJ solar cells, the needed requirements at the back side of devices are established. A comparison between different back surface fields (BSF) with and without the inclusion of a buffer layer is presented and resulting solar cell output characteristics are discussed. A discussion on the back contact of HJ solar cells is also presented. A new back TCO approach based on boron-doped zinc oxide (ZnO:B) layers is studied. With the aim of developing high-quality ZnO:B layers well-adapted to their use in HJ devices, different deposition parameters as well as post-deposition treatments such as post-hydrogen plasma or excimer laser annealing are studied, and their influence on solar cells is assessed. Throughout this work it is evidenced that the back side of HJ solar cells plays an important role on the achievement of high efficiencies. However, the enhancement of the overall device performance due to the back side optimisation is always dependent on phenomena taking place at the front side of devices. The use of the optimised back side layers developed in this thesis, together with improved front side layers and a novel metallisation approach have permitted a record conversion efficiency over 22%, thus demonstrating the great potential of this technology

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Cousins, Michael Andrew. « Microstructure of absorber layers in CdTe/Cds solar cells ». Thesis, Durham University, 2001. http://etheses.dur.ac.uk/4266/.

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This work concerns the microstructure of CSS-grown CdTe layers used for CdTe/CdS solar cells. Particular attention is given to how the development of microstructure on annealing with CdCl(_2) may correlate with increases in efficiency. By annealing pressed pellets of bulk CdTe powder, it is shown that microstructural change does occur on heating the material, enhanced by the inclusion of CdCl(_2) flux. However, the temperature required to cause significant effects is demonstrated to be higher than that at which heavy oxidation takes place. The dynamics of this oxidation are also examined. To investigate microstructural evolution in thin-films of CdTe, bi-layers of CdTe and CdS are examined by bevelling, thus revealing the microstructure to within ~1 µm of the interface. This allows optical microscopy and subsequent image analysis of grain structure. The work shows that the grain- size, which is well described by the Rayleigh distribution, varies linearly throughout the layer, but is invariant under CdCl(_2) treatment. Electrical measurements on these bi-layers, however, showed increased efficiency, as is widely reported. This demonstrates that the efficiency of these devices is not dictated by the bulk microstructure. Further, the region within 1 µm of the interface, of similar bi-layers to above, is examined by plan-view TEM. This reveals five-fold grain-growth on CdCl(_2) treatment. Moreover, these grains show a considerably smaller grain size than expected from extrapolating the linear trend in the bulk. These observations are explained in terms of the pinning of the CdTe grain size to the underlying CdS, and the small grain size this causes. A simple model was proposed for a link between the grain-growth to the efficiency improvement. The study also examines the behaviour of defects within grains upon CdCl(_2) treatment provided the first direct evidence of recovery on CdCl(_2) treatment in this system. Finally, a computer model is presented to describe the evolution of microstructure during growth. This is shown to be capable of reproducing the observed variation in grain size, but its strict physical accuracy is questioned.

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Bartsch, Jonas [Verfasser]. « Advanced Front Side Metallization for Crystalline Silicon Solar Cells with Electrochemical Techniques / Jonas Bartsch ». München : Verlag Dr. Hut, 2012. http://d-nb.info/1020298839/34.

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Benick, Jan [Verfasser]. « High-Efficiency n-Type Solar Cells with a Front Side Boron Emitter / Jan Benick ». München : Verlag Dr. Hut, 2011. http://d-nb.info/1013526287/34.

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Gonzalez, Maria. « Electronic Defects of III-V Compound Semiconductor Materials Grown on Metamorphic SiGe Substrates for Photovoltaic Applications ». The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250703650.

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Livres sur le sujet "SiGe SOLAR CELLS"

Office, General Accounting. Department of Energy : Solar and Renewable Resources Technologies Program : report to the Chairman, Subcommittee on Energy and Water Development, Committee on Appropriations, House of Representatives. Washington, D.C : The Office, 1997.

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Office, General Accounting. Department of Energy : Alternative financing and contracting strategies for cleanup projects : report to the Subcommittee on Energy and Water Development, Committee on Appropriations, House of Representatives. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013) : U.S. General Accounting Office, 1998.

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Office, General Accounting. Department of Energy : Poor property management allowed vulnerability to theft at Rocky Flats : report to Congressional requesters. Washington, D.C : U.S. General Accounting Office, 1995.

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Office, General Accounting. Department of Energy : DOE needs to improve controls over foreign visitors to weapons laboratories : report to the Committee on National Security, House of Representatives. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013) : The Office, 1997.

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Office, General Accounting. Department of Energy : Clear strategy on external regulation needed for worker and nuclear facility safety : report to the Committee on Science, House of Representatives. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013) : The Office, 1998.

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Office, General Accounting. Department of Energy : National security controls over contractors traveling to foreign countries need strengthening : report to Congressional requesters. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013) : U.S. General Accounting Office, 2000.

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Office, General Accounting. Department of Energy : Fundamental reassessment needed to address major mission, structure, and accountability problems : report to the Subcommittee on Energy and Water Development, Committee on Appropriations, House of Representatives. Washington, D.C : GAO, 2001.

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Office, General Accounting. Department of Energy : National priorities needed for meeting environmental agreements : report to the Secretary of Energy. Washington, D.C : U.S. General Accounting Office, 1995.

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Office, General Accounting. Department of Energy : Information on DOE's human tissue analysis work : fact sheet for Congressional requesters. Washington, D.C : U.S. General Accounting Office, 1995.

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Office, General Accounting. Department of Energy : Savings from deactivating facilities can be better estimated : report to the Chairman, Subcommittee on Military Procurement, Committee on National Security, House of Representatives. Washington, D.C : U.S. General Accounting Office, 1995.

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Chapitres de livres sur le sujet "SiGe SOLAR CELLS"

Peters, Marius, Hubert Hauser, Benedikt Bläsi, Matthias Kroll, Christian Helgert, Stephan Fahr, Samuel Wiesendanger et al. « Rear Side Diffractive Gratings for Silicon Wafer Solar Cells ». Dans Photon Management in Solar Cells, 49–90. Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527665662.ch3.

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Li, Q., D. Wu et W. Gao. « Insights into the Size Effect of the Dynamic Characteristics of the Perovskite Solar Cell ». Dans Lecture Notes in Civil Engineering, 353–57. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3330-3_37.

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AbstractDriven by government policy and incentives, solar power production has soared in the past decade and become a mainstay during the worldwide clean-power transition process. Among the various next-generation photovoltaic technologies, perovskite solar cells (PSCs) are the most important emerging area of research due to their outstanding power conversion efficiency and affordable scale-up operation. We adopted the nonlocal strain gradient theory and the first-order shear deformation plate theory to investigate the size-dependent free vibration behavior of PSCs. The size-dependency in the nanostructure of the PSCs was captured by coupling the nonlocal and strain gradient parameters. In accordance with the Hamilton principle, the governing equations set was derived. Subsequently, the Galerkin procedure was applied to address the dynamic characteristics analysis of PSCs with simply supported and clamped edges. Compared with the size-insensitive traditional continuum plate model, the current multiscale framework revealed a size effect on the free vibration of the PSC. Moreover, some parametric experiments were conducted to explore the impacts of scale length parameter, nonlocal parameter, and boundary conditions on the natural frequency of the PSC.

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Schütt, A., O. Lupan et R. Adelung. « Aluminium-BSF Versus PERC Solar Cells : Study of Rear Side Passivation Quality and Diffusion Length ». Dans IFMBE Proceedings, 745–48. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_132.

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Popovich, V. A., M. Janssen, I. J. Bennett et I. M. Richardson. « Microstructure and Mechanical Properties of a Screen-Printed Silver Front Side Solar Cell Contact ». Dans EPD Congress 2015, 265–72. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093503.ch31.

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Popovich, V. A., M. Janssen, I. J. Bennett et I. M. Richardson. « Microstructure and Mechanical Properties of a Screen-Printed Silver Front Side Solar Cell Contact ». Dans EPD Congress 2015, 265–72. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-48214-9_31.

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Raimondi, Alberto, et Laura Rosini. « Adaptive “Velari” ». Dans The Urban Book Series, 783–99. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-29515-7_70.

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AbstractAs it is known, the global phenomenon of rising temperatures causes uncomfortable and often harmful conditions for human beings living in moderate-climate zones, such as the Mediterranean area, especially in the hottest periods. Examinations of metropolitan cities can witness that high temperatures generate Urban Heat Island (UHI), due to population, buildings, vehicles and human activities in general. With the increase of rising temperatures in the latest decades, people living in big cities have gotten used to tackling heat discomfort with electricity charged cooling systems. As a result, the energy consumption for air-conditioning causes UHIs’ effects to further grow. It is scientifically confirmed that the behavioral habit of relying on artificially generated cold whenever temperatures rise will eventually make the climate crisis more problematic in the near future. Energy communities are used to producing, storing and consuming energy on site; therefore, power sources must be in close proximity to users. Albeit neglected in the Modern Era, the most proximate and sustainable energy supply is directly available to us: sunlight. The origin of hot temperatures, discomfort and energy waste is, indeed, the most exploitable power generator men can access to. In Southern Europe or Middle East cities, the use of veils as urban-scale shading devices is part of the consolidated tradition; a well-known example can be found in the Spanish city of Sevilla, where textile curtains named “Sevillans” are stretched between buildings. At the present time, we’re witnessing that the climate mitigation action of shading systems can be pursued in combination with energy production, with the development of membrane integrated flexible photovoltaic cells (PV). Masdar City in the United Arab Emirates, designed by the Foster Studio, or the Solar trees of the German pavilion at EXPO 2015 in Milan and the Promenade of the EXPO 2021 in Dubai are some innovative yet relevant cases. The use of PV cells for sun-shielding purposes is optimal to respond to a double-sided problem with a single object. Manufacturing an adaptive velario using composite fibers (i-Mesh), could both allow us to design the shape and modulate the density of integrated PV cells as needed. Method: To identify the best position for the adaptive tensile canopies, it is necessary to superimpose different site-specific data: temperatures in the urban area, in particular close to buildings; surfaces that receive most of the daytime radiation; sunlight and ventilation. To develop the most suitable solutions to many environmental scenarios, three-dimensional simulations performed with virtual models must be used both at urban (Envimet) and at building scale (in-Sight). Expected results: An algorithm capable of determining the “Velari” best position and the proper shading/density factor. A model, applied to a case study in Rome, to serve an evaluation of the benefits of this technology in terms of decreasing surface temperatures of external horizontal and vertical surfaces of buildings and streets.

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Nadtochiy, Andriy, Artem Podolian, Oleg Korotchenkov et Viktor Schlosser. « Ultrasonic Processing of Si and SiGe for Photovoltaic Applications ». Dans Solar Cells [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96939.

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The usage of power ultrasound for sonochemical processing of Si wafers and thin layers of amorphous Si and SiGe alloys is described. Over the last decade different industries have become increasingly drawn to sonochemistry because it provides a green and clean alternative to conventional technologies, particular in the areas of processing of silicon-based materials for photovoltaic applications. Two techniques related to ultrasonic cleaning of Si wafers and sonochemical modification of Si, SiGe and a-Si/SiGe surfaces in hydrocarbon solutions of chloroform (CHCl3) and dichloromethane (CH2Cl2) are discussed. The occurrence of cavitation and bubble implosion is an indispensable prerequisite for ultrasonic cleaning and surface processing as it is known today. The use of higher ultrasonic frequencies to expand the range of ultrasonic cleaning and processing capabilities is emphasized. Although exact mechanisms of an improved photoelectric behavior of Si-based structures subjected to power ultrasound are not yet clarified in many cases, the likely scenarios behind the observed photovoltaic performances of Si, SiGe and a-Si/SiGe surfaces are proposed to involve the surface chemistry of oxygen and hydrogen molecules as well hydrocarbon chains.

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« Selected Applications of Nanomaterials ». Dans Nanoscopic Materials : Size-Dependent Phenomena and Growth Principles, 369–419. 2^e éd. The Royal Society of Chemistry, 2014. http://dx.doi.org/10.1039/bk9781849739078-00369.

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The focus of interest in nanotechnology has been on nanoelectronics. Conventional diamonds with deliberately introduced nitrogen vacancies have potential applications in quantum computing, but it is in particular the new allotropes of carbon that have fascinated. Over the years, interest has shifted from the fullerenes over carbon nanotubes to graphene, a well-defined material with amazing electronic properties; in particular its electronic conductivity promises appealing applications. Semiconducting oxides are increasingly used in energy applications including Li ion batteries and solar cells. The necessity for nanoscale particles rests on the limited diffusion times for Li ions and the beneficial flat band structure for electron transport. The large intrinsic band gap of TiO2 is circumvented by the process of dye sensitisation in the Grätzel cell, where the energy efficiency has recently been boosted to 15%. Consideration of the low material costs makes this type of cell highly attractive for applications in third generation solar cells or solar water splitting materials. Semiconductor quantum dots in general and single-spin nanomagnets are of interest in information technology. A further focus is on the use of nanomaterials as transport agents or for analytical purposes in medicine. Drugs can be drafted onto the surface or encapsulated in liposomes, providing alternative ways of applying the drugs more selectively. Magnetic particles can be collected by magnets in the region of interest, while vesicles may release the drugs in response to increased temperature in areas of inflammation or altered pH in tumors.

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Pandya, Ankur, Vishal Sorathiya et Sunil Lavadiya. « Graphene-Based Nanophotonic Devices ». Dans Recent Advances in Nanophotonics - Fundamentals and Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.93853.

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Graphene is an ideal 2D material that breaks the fundamental properties of size and speed limits by photonics and electronics, respectively. Graphene is also an ideal material for bridging electronic and photonic devices. Graphene offers several functions of modulation, emission, signal transmission, and detection of wideband and short band infrared frequency spectrum. Graphene has improved human life in multiple ways of low-cost display devices and touchscreen structures, energy harvesting devices (solar cells), optical communication components (modulator, polarizer, detector, laser generation). There is numerous literature is available on graphene synthesis, properties, devices, and applications. However, the main interest among the scientist, researchers, and students to start with the numerical and computational process for the graphene-based nanophotonic devices. This chapter also includes the examples of graphene applications in optoelectronics devices, P-N junction diodes, photodiode structure which are fundamental devices for the solar cell and the optical modulation.

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« Quantum Dots ». Dans Exploring Materials through Patent Information, 39–53. The Royal Society of Chemistry, 2014. http://dx.doi.org/10.1039/bk9781782621126-00039.

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Quantum dots are semiconductors whose electrical and optical properties are determined by quantum confinement effects due to their particle size, typically around 10 nm. Properties are dependent not just on material composition but also on particle size. Quantum dots behave as phosphors and fluorescence, emitting wavelengths larger than that of the exciting radiation. This chapter covers the technology developments detailed by patents in the structure, synthesis, properties and applications of quantum dots in displays and solar cells.

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Actes de conférences sur le sujet "SiGe SOLAR CELLS"

Yun, S., Kwang Hoon Jung, Jung Wook Lim et Sun Jin Yun. « Substrate-Type Hydrogenated Amorphous SiGe Thin Film Solar Cells with Ge-Graded SiGe Layers on Opaque Substrates ». Dans ISES Solar World Congress 2015. Freiburg, Germany : International Solar Energy Society, 2016. http://dx.doi.org/10.18086/swc.2015.05.10.

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Tobail, Osama, Jeehwan Kim et Devendra Sadana. « Optimization of a-SiGe solar cells for tandem structures ». Dans 2010 3rd International Conference on Thermal Issues in Emerging Technologies Theory and Applications (ThETA). IEEE, 2010. http://dx.doi.org/10.1109/theta.2010.5766413.

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Diaz, Martin, Li Wang, Andrew Gerger, Anthony Lochtefeld, Chris Ebert, Robert Opila, Ivan Perez-Wurfl et Allen Barnett. « Dual-junction GaAsP/SiGe on silicon tandem solar cells ». Dans 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925042.

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Wang, Yi, Xuesong Lu, Susan R. Huang, Xiaoting Wang, Bobert Opila et Allen Barnett. « Heteroepitaxial growth of SiGe on Si by LPE for high efficiency solar cells ». Dans 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411424.

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Cano, Pablo, Manuel Hinojosa, Luis Cifuentes, Huy Nguyen, Aled Morgan, David Fuertes Marron, Ivan Garcia, Andrew Johnson et Ignacio Rey-Stolle. « Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates ». Dans 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8981138.

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Sato, Shin-ichiro, Kevin Beernink et Takeshi Ohshima. « Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use ». Dans 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2. IEEE, 2013. http://dx.doi.org/10.1109/pvsc-vol2.2013.7179251.

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Ferhati, H., F. Djeffal, K. Kacha et D. Arar. « High efficiency amorphous triple-junction thin-film SiGe solar cells incorporating multi-trench region ». Dans 2015 4th International Conference on Systems and Control (ICSC). IEEE, 2015. http://dx.doi.org/10.1109/icosc.2015.7153273.

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Schmieder, Kenneth J., Andrew Gerger, Ziggy Pulwin, Li Wang, Martin Diaz, Michael Curtin, Chris Ebert, Anthony Lochtefeld, Robert L. Opila et Allen Barnett. « GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells ». Dans 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744974.

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Fan, Qi Hua, Guofu Hou, Xianbo Liao, Xianbi Xiang, Changyong Chen, William Ingler, Nirupama Adiga et al. « High rate deposition of a-Si and a-SiGe solar cells near depletion condition ». Dans 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614457.

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Fan, Qi Hua, Xianbo Liao, Changyong Chen, Xianbi Xiang, Guofu Hou, William Ingler, Nirupama Adiga et al. « Numerical simulation and experimental investigation of a-Si/a-SiGe tandem junction solar cells ». Dans 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5617031.

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Rapports d'organisations sur le sujet "SiGe SOLAR CELLS"

Xu, Baomin. Novel Approach for Selective Emitter Formation and Front Side Metallization of Crystalline Silicon Solar Cells. Office of Scientific and Technical Information (OSTI), juillet 2010. http://dx.doi.org/10.2172/983937.

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