Articles de revues : « Switchable thin films »

1

Greenberg, Charles B. « Optically switchable thin films : a review ». Thin Solid Films 251, n^o 2 (novembre 1994) : 81–93. http://dx.doi.org/10.1016/0040-6090(94)90668-8.

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2

Ding, Ying, Xing Xu, Amar Bhalla, Xiubo Yang, Jianghua Chen et Chonglin Chen. « Switchable diode effect in BaZrO3 thin films ». RSC Advances 6, n^o 65 (2016) : 60074–79. http://dx.doi.org/10.1039/c6ra05668g.

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3

Grimes, C. A., P. L. Trouilloud et Li Chun. « Switchable lossy/non-lossy permalloy thin films ». IEEE Transactions on Magnetics 33, n^o 5 (1997) : 3996–98. http://dx.doi.org/10.1109/20.619641.

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4

Han, Hyeon, Donghoon Kim, Sangmin Chae, Jucheol Park, Sang Yeol Nam, Mingi Choi, Kijung Yong, Hyo Jung Kim, Junwoo Son et Hyun Myung Jang. « Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films ». Nanoscale 10, n^o 27 (2018) : 13261–69. http://dx.doi.org/10.1039/c7nr08666k.

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5

Sousanis, Andreas, Dirk Poelman, Christophe Detavernier et Philippe F. Smet. « Switchable Piezoresistive SmS Thin Films on Large Area ». Sensors 19, n^o 20 (11 octobre 2019) : 4390. http://dx.doi.org/10.3390/s19204390.

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Samarium monosulfide (SmS) is a switchable material, showing a pressure-induced semiconductor to metal transition. As such, it can be used in different applications such as piezoresistive sensors and memory devices. In this work, we present how e-beam sublimation of samarium metal in a reactive atmosphere can be used for the deposition of semiconducting SmS thin films on 150 mm diameter silicon wafers. The deposition parameters influencing the composition and properties of the thin films are evaluated, such as the deposition rate of Sm metal, the substrate temperature and the H2S partial pressure. We then present the changes in the optical, structural and electrical properties of this compound after the pressure-induced switching to the metallic state. The back-switching and stability of SmS thin films are studied as a function of temperature and atmosphere via in-situ X-ray diffraction. The thermally induced back switching initiates at 250 °C, while above 500 °C, Sm2O2S is formed. Lastly, we explore the possibility to determine the valence state of the samarium ions by means of X-ray photoelectron spectroscopy.

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6

Calhoun, Seth, Rachel Evans, Cameron Nickle, Isaiah O. Oladeji, Justin Cleary, Evan M. Smith, Sayan Chandra, Debashis Chanda et Robert E. Peale. « Vanadium Oxide Thin Film by Aqueous Spray Deposition ». MRS Advances 3, n^o 45-46 (2018) : 2777–82. http://dx.doi.org/10.1557/adv.2018.512.

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ABSTRACTVanadium Oxide has application to infrared bolometers due to high temperature coefficient of resistivity (TCR). It has attracted interest for switchable plasmonic devices due to its metal to insulator transition near room temperature. We report here the properties of vanadium oxide deposited by an aqueous spray process. The films have a ropy surface morphology with ∼70 nm surface roughness. The polycrystalline phase depends on annealing conditions. The films have TCR of ∼2%/deg, which compares well with sputtered films. Only weak evidence is found for an insulator-metal phase transition in these films.

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7

Suchaneck, Gunnar, O. Volkonskiy, Gerald Gerlach, Zdenek Hubička, A. Dejneka, Lubomir Jastrabik, D. Kiselev, I. Bdikin et Andréi L. Kholkin. « Piezoelectric PZT Thin Films on Flexible Copper-Coated Polymer Films ». Materials Science Forum 636-637 (janvier 2010) : 392–97. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.392.

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This work analyzes the processing of Pb(Zr,Ti)O3 (PZT) thin films directly on copper-coated polymer films. PZT thin film deposition was performed onto the metallized Kapton® films using a single RF plasma jet. In order to reduce the interaction of PZT and Cu during the initial growth stage, an ultrathin amorphous TiO2-x seeding layer was sputter-deposited prior to PZT deposition. The film texture was a mixture of (111)-oriented perovskite nanocrystals, rutile and pyrochlore. Topography and piezoelectric in-plane and out-of-plane response of the films were evaluated using a commercial AFM adapted for piezoforce measurements. The as-deposited films were self-polarized with polarization pointing at the surface of the sample. Polarization was switchable and a piezoelectric hysteresis was obtained.

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8

Bao, Shanhu, Yasusei Yamada, Kazuki Tajima, Ping Jin, Masahisa Okada et Kazuki Yoshimura. « Switchable mirror based on Mg–Zr–H thin films ». Journal of Alloys and Compounds 513 (février 2012) : 495–98. http://dx.doi.org/10.1016/j.jallcom.2011.10.098.

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9

Richardson, Thomas J. « Phase transitions in non-hydride switchable mirror thin films ». Phase Transitions 81, n^o 7-8 (juillet 2008) : 807–13. http://dx.doi.org/10.1080/01411590801911406.

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Baldi, A., D. M. Borsa, H. Schreuders, J. H. Rector, T. Atmakidis, M. Bakker, H. A. Zondag, W. G. J. van Helden, B. Dam et R. Griessen. « Mg–Ti–H thin films as switchable solar absorbers ». International Journal of Hydrogen Energy 33, n^o 12 (juin 2008) : 3188–92. http://dx.doi.org/10.1016/j.ijhydene.2008.01.026.

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11

Cao, Guan Ying, Fang Fang, Ai Ling Zou, Jing Hui Zhang, Xiao Yang He, Ying Ming Gao et Nian Yu Zou. « Hydrogen Induced Modifications of Optical and Electric Properties in Mg Thin Films ». Advanced Materials Research 690-693 (mai 2013) : 1690–93. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.1690.

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A series of Mg thin films with different thickness from 10 nm to 200 nm were prepared and hydrogenated. The transmission spectrum and sheet resistance before and after hydrogenation were measured. The transmission increased from nearly zero to 16 %, the maximal changes happened at 561 nm was 17.6% with 50 nm thickness of Mg thin film, and its sheet resistance increased from 2.3 to 75.2Ω/. The results show that the Mg thin films changed obviously from shiny, metallic films to transparent, insulating films. The attractive phenomenon might enlighten the investigation and be of particular interest for switchable mirrors.

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12

Poh, Chung Kiak, Chung How Poh, Zai Ping Guo et Hua Kun Liu. « Characterization of Pd Nano-Thin Films for High-Speed Switchable Mirrors ». Materials Science Forum 700 (septembre 2011) : 166–69. http://dx.doi.org/10.4028/www.scientific.net/msf.700.166.

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We fabricated Pd thin films from 2 to 35 nm thick via thermal evaporation, and a hermetically sealed hydrogen optical cell was used to characterize the films for properties such as hydrogen fractional ratio, optical switching contrast (Weber contrast), and response and recovery times. An atomic force microscope with a high resolution scanning tip was used to study the evolution of the film morphology.

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13

Bao, Shanhu, Kazuki Tajima, Yasusei Yamada, Masahisa Okada et Kazuki Yoshimura. « Polytetrafluoroethylene (PTFE) Top-Covered Mg-Ni Switchable Mirror Thin Films ». MATERIALS TRANSACTIONS 49, n^o 8 (2008) : 1919–21. http://dx.doi.org/10.2320/matertrans.mrp2008117.

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14

Marks, Zefram D., David Glugla, Jacob T. Friedlein, Sean E. Shaheen, Robert R. McLeod, Malik Y. Kahook et Devatha P. Nair. « Switchable diffractive optics using patterned PEDOT:PSS based electrochromic thin-films ». Organic Electronics 37 (octobre 2016) : 271–79. http://dx.doi.org/10.1016/j.orgel.2016.07.004.

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15

Oliva-Ramírez, Manuel, Victor J. Rico, Jorge Gil-Rostra, Oriol Arteaga, Enric Bertran, Rosalía Serna, Agustín R. González-Elipe et Francisco Yubero. « Liquid switchable radial polarization converters made of sculptured thin films ». Applied Surface Science 475 (mai 2019) : 230–36. http://dx.doi.org/10.1016/j.apsusc.2018.12.200.

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16

Bao, S., K. Tajima, Y. Yamada, M. Okada et K. Yoshimura. « Color-neutral switchable mirrors based on magnesium-titanium thin films ». Applied Physics A 87, n^o 4 (4 avril 2007) : 621–24. http://dx.doi.org/10.1007/s00339-007-3991-z.

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17

Zhang, Linxing, Jun Chen, Jiangli Cao, Dongyu He et Xianran Xing. « Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO3-based thin films by chemical solution deposition ». Journal of Materials Chemistry C 3, n^o 18 (2015) : 4706–12. http://dx.doi.org/10.1039/c5tc00814j.

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The ferroelectric doped BiFeO₃thin films exhibit large resistive switching (with ON/OFF ratios ∼10⁴) and stably switchable photovoltaic response with good retention properties, providing multiple selections for non-destructive ferroelectric memory diveces.

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18

Al-Bataineh, Qais M., A. A. Ahmad, A. M. Alsaad, I. A. Qattan, Ihsan A. Aljarrah et Ahmad D. Telfah. « Effect of Iodine Filler on Photoisomerization Kinetics of Photo-Switchable Thin Films Based on PEO-BDK-MR ». Polymers 13, n^o 5 (9 mars 2021) : 841. http://dx.doi.org/10.3390/polym13050841.

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We report the effect of an iodine filler on photoisomerization kinetics of photo-switchable PEO-BDK-MR thin films. The kinetics of photoisomerization and time progression of PEO-BDK-MR/I2 nanocomposite thin films are investigated using UV-Vis, FTIR spectroscopies, and modified mathematical models developed using new analytical methods. Incorporating iodine filler into the PEO-BDK-MR polymeric matrix enhances the isomerization energy barrier and considerably increases the processing time. Our outcomes propose that enhanced photoisomerized and time processed (PEO-BDK-MR)/I2 thin films could be potential candidates for a variety of applications involving molecular solar thermal energy storage media.

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19

Luo, Ya-Yuan, Zhi-Xu Zhang, Chan-Yuan Su, Wan-Ying Zhang, Ping-Ping Shi, Qiong Ye et Da-Wei Fu. « Tunable optoelectronic response multifunctional materials : exploring switching and photoluminescence integrated in flexible thin films/crystals ». Journal of Materials Chemistry C 8, n^o 21 (2020) : 7089–95. http://dx.doi.org/10.1039/d0tc00266f.

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20

Heo, Seungyang, Daseob Yoon, Sangbae Yu, Junwoo Son et Hyun Myung Jang. « Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3 ». Journal of Materials Chemistry C 5, n^o 45 (2017) : 11763–68. http://dx.doi.org/10.1039/c7tc03730a.

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Complex oxide heterostructures composed of oxide semiconductor thin films and ferroelectric single crystals have attracted substantial interest due to the electrically switchable channel resistance by the polarization reversal of ferroelectrics.

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21

Fang, Liang, Lu You, Yang Zhou, Peng Ren, Zhi Shiuh Lim et Junling Wang. « Switchable photovoltaic response from polarization modulated interfaces in BiFeO3 thin films ». Applied Physics Letters 104, n^o 14 (7 avril 2014) : 142903. http://dx.doi.org/10.1063/1.4870972.

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22

BAO, Shanhu, Yasusei YAMADA, Masahisa OKADA et Kazuki YOSHIMURA. « Electrochromic Properties of Pd-capped Mg-Ni Switchable Mirror Thin Films ». Electrochemistry 76, n^o 4 (2008) : 282–87. http://dx.doi.org/10.5796/electrochemistry.76.282.

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23

Case, F. C. « A novel deposition technique for switchable vanadium sesquioxide (V2O3) thin films ». Journal of Vacuum Science & ; Technology A : Vacuum, Surfaces, and Films 9, n^o 3 (mai 1991) : 461–65. http://dx.doi.org/10.1116/1.577389.

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24

Song, H. J., J. B. Wang, X. L. Zhong, J. J. Cheng, L. H. Jia, F. Wang et B. Li. « Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories ». Applied Physics Letters 103, n^o 26 (23 décembre 2013) : 262901. http://dx.doi.org/10.1063/1.4855555.

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25

Xinen Zhu, V. Lee, J. Phillips et A. Mortazawi. « An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films ». IEEE Microwave and Wireless Components Letters 19, n^o 6 (juin 2009) : 359–61. http://dx.doi.org/10.1109/lmwc.2009.2020013.

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26

Fan, Zhen, Wei Ji, Tao Li, Juanxiu Xiao, Ping Yang, Khuong Phuong Ong, Kaiyang Zeng, Kui Yao et John Wang. « Enhanced photovoltaic effects and switchable conduction behavior in BiFe0.6Sc0.4O3 thin films ». Acta Materialia 88 (avril 2015) : 83–90. http://dx.doi.org/10.1016/j.actamat.2015.01.021.

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27

Wang, Ding, Ping Wang, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma et Zetian Mi. « Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy ». Applied Physics Letters 122, n^o 5 (30 janvier 2023) : 052101. http://dx.doi.org/10.1063/5.0136265.

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We report on the thickness scaling behavior of ferroelectric Sc0.3Al0.7N (ScAlN) films grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed in ScAlN films with thicknesses ranging from 100 to 5 nm. An increase in coercive field and a significant diminution of remnant polarization are found when the ferroelectric layer is scaled down to below 20 nm. Notably, a switching voltage of 2–3.8 V and saturated remnant polarization of ∼23 μC/cm2 are measured in 5 nm thick ScAlN. X-ray diffractions and transmission electron microscopy studies indicate that the increase in coercive field and diminishment in switchable polarization can be closely linked to the surface oxidation and strain state in ultrathin ScAlN films. This work sheds light on the fundamental thickness scaling fingerprints of ScAlN thin films and represents an important step for next-generation compact and power-efficient devices and applications based on nitride ferroelectrics.

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28

Cho, K. W., N. K. Kim, S. H. Oh, E. S. Choi, H. J. Sun, S. J. Yeom, K. N. Lee et al. « Ferroelectric Properties of Lead-Free (Bi,La)₄Ti₃O₁₂ Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device ». Materials Science Forum 486-487 (juin 2005) : 285–88. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.285.

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Ferroelectric properties of Pb-free (Bi,La)4Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12, which was analyzed by ICP-MS method. The switchable polarization obtained in a 100nm-thick BLT film was about 20 uC/cm2 at the 3 V applied voltage, and the optimized BLT film showed little fatigue loss about 10% up to 1×1011 cycles. The imprint properties of the BLT film were also characterized at 25 °C and 90 °C operating temperature after 125 °C data storage. Regardless of operating temperature, switchable polarization of BLT had a sufficiently large margin for device operation up to 10 years.

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Rani, Komalika, Sylvia Matzen, Stéphane Gable, Thomas Maroutian, Guillaume Agnus et Philippe Lecoeur. « Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films ». Journal of Physics : Condensed Matter 34, n^o 10 (23 décembre 2021) : 104003. http://dx.doi.org/10.1088/1361-648x/ac3f67.

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Abstract Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100% switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr, Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

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Alguerá, M., M. L. Calzada, L. Pardo et E. Snoeck. « Combined effect of grain size and tensile stresses on the ferroelectric properties of sol-gel (Pb,La)TiO3 thin films ». Journal of Materials Research 14, n^o 12 (décembre 1999) : 4570–80. http://dx.doi.org/10.1557/jmr.1999.0619.

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Transmission electron microscopy has shown that the grain size of sol-gel-prepared lanthanum-modified lead titanate films increases from ∼100 to ∼1 μm when the excess of PbO in the precursor solution is reduced from 20 to 10 mol%. Switchable polarization is higher in the films with a smaller grain size. Profilometry and the temperature dependence of the dielectric permittivity indicate that films are tensile stressed by the substrate. The grain-size effect on polarization switching is explainedby taking into account this tensile stress, which is thought to induce some a-domain orientation and 90° domain wall clamping in the grains attached to the substrate.

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Bhoje Gowd, E., Bhanu Nandan, Mukesh Kumar Vyas, Nadja C. Bigall, Alexander Eychmüller, Heike Schlörb et Manfred Stamm. « Highly ordered palladium nanodots and nanowires from switchable block copolymer thin films ». Nanotechnology 20, n^o 41 (18 septembre 2009) : 415302. http://dx.doi.org/10.1088/0957-4484/20/41/415302.

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32

Wang, Can, Kui-juan Jin, Zhong-tang Xu, Le Wang, Chen Ge, Hui-bin Lu, Hai-zhong Guo, Meng He et Guo-zhen Yang. « Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films ». Applied Physics Letters 98, n^o 19 (9 mai 2011) : 192901. http://dx.doi.org/10.1063/1.3589814.

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33

Yamada, Y., S. Bao, K. Tajima, M. Okada et K. Yoshimura. « Optical properties of switchable mirrors based on magnesium-calcium alloy thin films ». Applied Physics Letters 94, n^o 19 (11 mai 2009) : 191910. http://dx.doi.org/10.1063/1.3138130.

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34

Katiyar, Rajesh K., Yogesh Sharma, Pankaj Misra, Venkata S. Puli, Satyaprakash Sahoo, Ashok Kumar, James F. Scott, Gerardo Morell, Brad R. Weiner et Ram S. Katiyar. « Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films ». Applied Physics Letters 105, n^o 17 (27 octobre 2014) : 172904. http://dx.doi.org/10.1063/1.4900755.

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Caputo, Gianvito, Roberto Cingolani, Pantaleo Davide Cozzoli et Athanassia Athanassiou. « Wettability conversion of colloidal TiO2 nanocrystal thin films with UV-switchable hydrophilicity ». Physical Chemistry Chemical Physics 11, n^o 19 (2009) : 3692. http://dx.doi.org/10.1039/b823331d.

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Dam, B., A. C. Lokhorst, A. Remhof, M. C. R. Heijna, J. H. Rector, D. Borsa et J. W. J. Kerssemakers. « In situ preparation of YH2 thin films by PLD for switchable devices ». Journal of Alloys and Compounds 356-357 (août 2003) : 526–29. http://dx.doi.org/10.1016/s0925-8388(03)00117-8.

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Han, Hyeon, Seungwoo Song, June Ho Lee, Kun Joong Kim, Guan-Woo Kim, Taiho Park et Hyun Myung Jang. « Switchable Photovoltaic Effects in Hexagonal Manganite Thin Films Having Narrow Band Gaps ». Chemistry of Materials 27, n^o 21 (30 octobre 2015) : 7425–32. http://dx.doi.org/10.1021/acs.chemmater.5b03408.

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Bao, Shanhu, Yasusei Yamada, Kazuki Tajima, Masahisa Okada et Kazuki Yoshimura. « Gasochromic Properties of Mg–Ni Switchable Mirror Thin Films on Flexible Sheets ». Japanese Journal of Applied Physics 47, n^o 10 (17 octobre 2008) : 7993–97. http://dx.doi.org/10.1143/jjap.47.7993.

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Yamada, Y., M. Miura, K. Tajima, M. Okada et K. Yoshimura. « Pd distribution of switchable mirrors based on Mg–Y alloy thin films ». Solar Energy Materials and Solar Cells 120 (janvier 2014) : 631–34. http://dx.doi.org/10.1016/j.solmat.2013.10.006.

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Giro, G., M. Cocchi, V. Fattori, G. Gadret, G. Ruani, M. Murgia, M. Cavallini et al. « Excimer-like electroluminescence from thin films of switchable supermolecular anthracene-based rotaxanes ». Synthetic Metals 122, n^o 1 (mai 2001) : 27–29. http://dx.doi.org/10.1016/s0379-6779(00)01329-1.

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Huang, Wei, Joyprokash Chakrabartty, Catalin Harnagea, Dawit Gedamu, Ibrahima Ka, Mohamed Chaker, Federico Rosei et Riad Nechache. « Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films ». ACS Applied Materials & ; Interfaces 10, n^o 15 (22 mars 2018) : 12790–97. http://dx.doi.org/10.1021/acsami.8b00459.

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Bao, S., K. Tajima, Y. Yamada, M. Okada et K. Yoshimura. « Magnesium–titanium alloy thin-film switchable mirrors ». Solar Energy Materials and Solar Cells 92, n^o 2 (février 2008) : 224–27. http://dx.doi.org/10.1016/j.solmat.2007.02.024.

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Poongodi, S., P. Suresh Kumar, Yoshitake Masuda, D. Mangalaraj, N. Ponpandian, C. Viswanathan et Seeram Ramakrishna. « Synthesis of hierarchical WO3 nanostructured thin films with enhanced electrochromic performance for switchable smart windows ». RSC Advances 5, n^o 117 (2015) : 96416–27. http://dx.doi.org/10.1039/c5ra19177g.

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Oliveros, Malena, Lola González-García, Veronica Mugnaini, Francisco Yubero, Nans Roques, Jaume Veciana, Agustin R. González-Elipe et Concepció Rovira. « Novel Guests for Porous Columnar Thin Films : The Switchable Perchlorinated Trityl Radical Derivatives ». Langmuir 27, n^o 8 (19 avril 2011) : 5098–106. http://dx.doi.org/10.1021/la200470f.

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Peng, Juan, Yu Xuan, Hanfu Wang, Yuming Yang, Binyao Li et Yanchun Han. « Solvent-induced microphase separation in diblock copolymer thin films with reversibly switchable morphology ». Journal of Chemical Physics 120, n^o 23 (15 juin 2004) : 11163–70. http://dx.doi.org/10.1063/1.1751177.

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Drechsler, Vincent, Joachim Krauth, Julian Karst, Harald Giessen et Mario Hentschel. « Switchable Optical Nonlinearity at the Metal to Insulator Transition in Magnesium Thin Films ». ACS Photonics 7, n^o 6 (19 mai 2020) : 1560–68. http://dx.doi.org/10.1021/acsphotonics.0c00409.

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47

Yamada, Y., M. Miura, K. Tajima, M. Okada et K. Yoshimura. « Optical switching durability of switchable mirrors based on magnesium–yttrium alloy thin films ». Solar Energy Materials and Solar Cells 117 (octobre 2013) : 396–99. http://dx.doi.org/10.1016/j.solmat.2013.06.050.

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48

Han, Hyeon, Donghoon Kim, Kanghyun Chu, Jucheol Park, Sang Yeol Nam, Seungyang Heo, Chan-Ho Yang et Hyun Myung Jang. « Enhanced Switchable Ferroelectric Photovoltaic Effects in Hexagonal Ferrite Thin Films via Strain Engineering ». ACS Applied Materials & ; Interfaces 10, n^o 2 (2 janvier 2018) : 1846–53. http://dx.doi.org/10.1021/acsami.7b16700.

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Shin, Jun-Hwan, Kyung Hyun Park et Han-Cheol Ryu. « A Band-Switchable and Tunable THz Metamaterial Based on an Etched Vanadium Dioxide Thin Film ». Photonics 9, n^o 2 (2 février 2022) : 89. http://dx.doi.org/10.3390/photonics9020089.

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A band-switchable and tunable terahertz (THz) metamaterial based on a vanadium dioxide (VO2) thin film was proposed in the THz frequency regime. The VO2 thin film with a high conductivity change rate and smooth phase transition characteristics was deposited. To obtain band switching characteristics and reduce THz wave loss, the VO2 thin film was etched in the form of a line. Two rectangular C-shaped resonators were configured to face each other, with an etched VO2 thin film line in between. When the VO2 thin film was in the insulator phase, the two resonators individually resonated, and when the VO2 thin film was in the metal phase, they were connected and resonated as one, showing band switching characteristics. According to the state of the VO2 thin film, the fabricated metamaterial resonated at 1.29 THz when the two resonators were electrically separated and resonated at 0.65 THz when the two resonators were electrically connected. In the band-switching process, the THz wave transmission characteristics were continuously tunable. The measurement results of the proposed structure clearly showed that the rectangular C-shaped metamaterial based on the etched VO2 thin film is capable of band switching and continuous transmission control. In the near future, band-switchable and tunable THz metamaterials based on etched VO2 thin films can be employed as key devices in THz wave 6G wireless communication technology.

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Wang, Liansheng, Fengkai Xin, Quanhong Fu et Dongyan Xia. « A Thermally Controlled Ultra-Wideband Wide Incident Angle Metamaterial Absorber with Switchable Transmission at the THz Band ». Nanomaterials 15, n^o 5 (6 mars 2025) : 404. https://doi.org/10.3390/nano15050404.

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We demonstrate a thermally controlled ultra-wideband wide incident angle metamaterial absorber with switchable transmission at the THz band in this paper. The underlying hybrid structure of FSS-VO2 thin films make them switchable between absorption mode and transmission mode by controlling the temperature. It can achieve ultra-wideband absorption with above 90% absorption from 1 THz to 10 THz and exhibits excellent absorption performance under a wide range of incident and polarization angles at a high temperature (80 °C). At room temperature (27 °C), it acts in transmission mode with a transmission coefficient of up to 60% at 3.1278 THz. The transmission region is inside the absorption band, which is very important for practical applications. The metamaterial absorber has the advantage of easy fabrication, an ultra-wideband, a wide incident angle, switchable multi-functions, and passivity with wide application prospects on terahertz communication and radar devices.

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